Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698857
O. Gruber, P. Paillet, O. Musseau, C. Marcandella, B. Aspar, A. Auberton-Herve
In this work, we study the trapping properties of Unibond(R) oxides. We measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shift by considering a second type of electron traps.
{"title":"Physical characterization of electron trapping in Unibond(R) oxides","authors":"O. Gruber, P. Paillet, O. Musseau, C. Marcandella, B. Aspar, A. Auberton-Herve","doi":"10.1109/RADECS.1997.698857","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698857","url":null,"abstract":"In this work, we study the trapping properties of Unibond(R) oxides. We measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shift by considering a second type of electron traps.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121376081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698859
J. Cantin, H. J. von Bardeleben, J. Autran
The total dose response of Si/SiO/sub 2/ structures with ultrathin (20-40 /spl Aring/) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states.
{"title":"Irradiation effects in ultrathin Si/SiO/sub 2/ structures","authors":"J. Cantin, H. J. von Bardeleben, J. Autran","doi":"10.1109/RADECS.1997.698859","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698859","url":null,"abstract":"The total dose response of Si/SiO/sub 2/ structures with ultrathin (20-40 /spl Aring/) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115944393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.699010
K. Johansson, P. Dyreklev, B. Granbom, M. Calvet, S. Fourtine, O. Feuillatre
This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and mainly high latitudes. The SEUs were monitored by a Component Upset Test Equipment (CUTE), designed for this experiment. The in flight results are compared to ground based testing with neutrons from three different sources.
{"title":"In-flight and ground testing of single event upset sensitivity in static RAMs","authors":"K. Johansson, P. Dyreklev, B. Granbom, M. Calvet, S. Fourtine, O. Feuillatre","doi":"10.1109/RADECS.1997.699010","DOIUrl":"https://doi.org/10.1109/RADECS.1997.699010","url":null,"abstract":"This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and mainly high latitudes. The SEUs were monitored by a Component Upset Test Equipment (CUTE), designed for this experiment. The in flight results are compared to ground based testing with neutrons from three different sources.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115700045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698934
S. Buchner, M. Olmos, P. Cheynet, R. Velazco, D. McMorrow, J. Melinger, R. Ecoffet, J. Muller
A pulsed laser was used to inject errors into an electronic system consisting of a number of different integrated circuits functioning as a digital version of an artificial neural network. The results confirm that the system as a whole can operate autonomously in the radiation environment of space. Additional work was done to characterize the effects of the upsets on the output of the artificial neural network.
{"title":"Pulsed laser validation of recovery mechanisms of critical SEE's in an artificial neural network system","authors":"S. Buchner, M. Olmos, P. Cheynet, R. Velazco, D. McMorrow, J. Melinger, R. Ecoffet, J. Muller","doi":"10.1109/RADECS.1997.698934","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698934","url":null,"abstract":"A pulsed laser was used to inject errors into an electronic system consisting of a number of different integrated circuits functioning as a digital version of an artificial neural network. The results confirm that the system as a whole can operate autonomously in the radiation environment of space. Additional work was done to characterize the effects of the upsets on the output of the artificial neural network.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116168223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698921
J. Melinger, D. McMorrow, S. Buchner, A. Knudson, L. Tran, A. Campbell
In this paper we examine how single-event upsets (SEU) and related charge collection characteristics in microelectronic circuits and devices depend on the depth of charge deposited by a picosecond laser pulse. Charge tracks of variable length are generated by tuning the laser wavelength through the semiconductor absorption spectrum. Our results show that the variable-length charge tracks provide a unique and sensitive probe of the charge collection volume of a micro-electronic circuit/device. In favorable cases we show how the wavelength tunability of the laser can be used to provide an experimental estimate of the charge collection depth.
{"title":"Investigations of single-event upsets and charge collection in micro-electronics using variable-length laser-generated charge tracks","authors":"J. Melinger, D. McMorrow, S. Buchner, A. Knudson, L. Tran, A. Campbell","doi":"10.1109/RADECS.1997.698921","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698921","url":null,"abstract":"In this paper we examine how single-event upsets (SEU) and related charge collection characteristics in microelectronic circuits and devices depend on the depth of charge deposited by a picosecond laser pulse. Charge tracks of variable length are generated by tuning the laser wavelength through the semiconductor absorption spectrum. Our results show that the variable-length charge tracks provide a unique and sensitive probe of the charge collection volume of a micro-electronic circuit/device. In favorable cases we show how the wavelength tunability of the laser can be used to provide an experimental estimate of the charge collection depth.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116409575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698959
F. Berghmans, F. Vos, M. Decréton
We compare the gamma radiation response of three different types of commercially available optical fibre temperature sensors. These are semiconductor absorption, Fabry-Perot cavity and fluorescence sensors. In order to evaluate their possible application in nuclear environments, we first highlight the principles of operation and the constructions. We then report on the gamma irradiation results and explain the observed degradation phenomena. For all three sensor types, the basic transduction mechanism does not seem to be affected by gamma radiation. The semiconductor absorption sensor shows a good radiation resistance (up to 160 kGy) in its present form, whereas the other sensor constructions need to be adapted. For the semiconductor absorption sensor, additional neutron irradiation experiments are performed, which are found to affect the principle of operation of this sensor.
{"title":"Evaluation of three different optical fibre temperature sensor types for application in gamma radiation environments","authors":"F. Berghmans, F. Vos, M. Decréton","doi":"10.1109/RADECS.1997.698959","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698959","url":null,"abstract":"We compare the gamma radiation response of three different types of commercially available optical fibre temperature sensors. These are semiconductor absorption, Fabry-Perot cavity and fluorescence sensors. In order to evaluate their possible application in nuclear environments, we first highlight the principles of operation and the constructions. We then report on the gamma irradiation results and explain the observed degradation phenomena. For all three sensor types, the basic transduction mechanism does not seem to be affected by gamma radiation. The semiconductor absorption sensor shows a good radiation resistance (up to 160 kGy) in its present form, whereas the other sensor constructions need to be adapted. For the semiconductor absorption sensor, additional neutron irradiation experiments are performed, which are found to affect the principle of operation of this sensor.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128466888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698944
H. Amekura, N. Kishimoto, K. Kono
Since two-step degradation, i.e., gradual degradation at low fluence and steep at higher fluence, was found in Si space solar cells, extensive studies have been conducted to clarify the mechanism. Recent studies indicate that the steep degradation results from a bulk process. Either decrease in carrier mobility or carrier exhaustion has been proposed for the mechanism. Independently of the device degradation, we observed a similar two-step degradation in photoconductivity of bulk Si, and have investigated the relevant phenomena. Taking advantage of the bulk simplicity, the steep degradation mechanism has been experimentally evaluated. Consequently, a possibility of mobility change is excluded. A rapid decrease in photocarrier lifetime is evident, though the carrier exhaustion simultaneously occurs. The drop of lifetime is explained in terms of Fermi-level-dependent recombination cross-section of deep centers. As the Fermi-level jump is induced by the carrier exhaustion, the cross-section may steeply increase. The origin of two-step degradation in the solar cells is also discussed, based on the bulk degradation.
{"title":"Radiation-induced two-step degradation of Si photoconductors and space solar cells","authors":"H. Amekura, N. Kishimoto, K. Kono","doi":"10.1109/RADECS.1997.698944","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698944","url":null,"abstract":"Since two-step degradation, i.e., gradual degradation at low fluence and steep at higher fluence, was found in Si space solar cells, extensive studies have been conducted to clarify the mechanism. Recent studies indicate that the steep degradation results from a bulk process. Either decrease in carrier mobility or carrier exhaustion has been proposed for the mechanism. Independently of the device degradation, we observed a similar two-step degradation in photoconductivity of bulk Si, and have investigated the relevant phenomena. Taking advantage of the bulk simplicity, the steep degradation mechanism has been experimentally evaluated. Consequently, a possibility of mobility change is excluded. A rapid decrease in photocarrier lifetime is evident, though the carrier exhaustion simultaneously occurs. The drop of lifetime is explained in terms of Fermi-level-dependent recombination cross-section of deep centers. As the Fermi-level jump is induced by the carrier exhaustion, the cross-section may steeply increase. The origin of two-step degradation in the solar cells is also discussed, based on the bulk degradation.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125284070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698879
G. Akoun, O. Coumar, C. Tavernier
This paper presents different approaches made by numerical simulation to study the behavior of electronic components and the effect of their package, when submitted to an ElectroMagnetic (EM) aggression. The simulations are performed using several codes: DESSIS-ISE, SPICE, ELF3D and ELFI3S. The EM susceptibility of an input buffer (FACT technology) is investigated. Continuous Wave (CW) type aggressions with different frequencies and amplitudes are simulated. The results emphasize differences between component simulation tools. However, the most significant differences are observed between EM interactions at the component levels and at the package level. In particular, a noise filtering process due to the package appears at sufficiently high frequencies.
{"title":"Numerical simulation of an electromagnetic aggression on a FACT component and investigation on package effect","authors":"G. Akoun, O. Coumar, C. Tavernier","doi":"10.1109/RADECS.1997.698879","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698879","url":null,"abstract":"This paper presents different approaches made by numerical simulation to study the behavior of electronic components and the effect of their package, when submitted to an ElectroMagnetic (EM) aggression. The simulations are performed using several codes: DESSIS-ISE, SPICE, ELF3D and ELFI3S. The EM susceptibility of an input buffer (FACT technology) is investigated. Continuous Wave (CW) type aggressions with different frequencies and amplitudes are simulated. The results emphasize differences between component simulation tools. However, the most significant differences are observed between EM interactions at the component levels and at the package level. In particular, a noise filtering process due to the package appears at sufficiently high frequencies.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128054176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698890
R. Pease, M. Shaneyfelt, P. Winokur, D. Fleetwood, J. Gorelick, S. McClure, S. Clark, L. Cohn, D. Alexander
The ionizing radiation response of several semiconductor process technologies has been shown to be affected by preirradiation thermal stress. Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS.
{"title":"Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits","authors":"R. Pease, M. Shaneyfelt, P. Winokur, D. Fleetwood, J. Gorelick, S. McClure, S. Clark, L. Cohn, D. Alexander","doi":"10.1109/RADECS.1997.698890","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698890","url":null,"abstract":"The ionizing radiation response of several semiconductor process technologies has been shown to be affected by preirradiation thermal stress. Data on bipolar linear circuits are presented and discussed in terms of the mechanisms previously proposed for CMOS.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131633238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698958
N. Machet, C. Kubert-Habart, V. Baudinaud, D. Fournier, B. Forget
A CCD camera has been bloomed by a laser emitting in the visible or near infrared range and the ensuing video images have been stored and analysed. The effects have been modelled using Poisson's equations and continuity equations with 2 or 3 dimensions and a software has been built in order to predict the consequences of blooming on video images. Simulation is shown to be in agreement with experimental results.
{"title":"Study of the mechanism of electronic diffusion in a CCD camera subject to intense laser illumination","authors":"N. Machet, C. Kubert-Habart, V. Baudinaud, D. Fournier, B. Forget","doi":"10.1109/RADECS.1997.698958","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698958","url":null,"abstract":"A CCD camera has been bloomed by a laser emitting in the visible or near infrared range and the ensuing video images have been stored and analysed. The effects have been modelled using Poisson's equations and continuity equations with 2 or 3 dimensions and a software has been built in order to predict the consequences of blooming on video images. Simulation is shown to be in agreement with experimental results.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124913635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：