Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765798
M.H.M. Koutersa, G.H.M. Gubbelsa, O. O'Halloranb, R. Rongenb, E.R. Weltevredena
In high power automotive electronics copper wire bonding is regarded as most promising alternative for gold wire bonding in 1st level interconnects and therefore subjected to severe functional requirements. In the Cu-Al ball bond interface the growth of intermetallic compounds may deteriorate the wire bond. The thermo-mechanical properties of these intermetallic compounds are crucial in the prediction of the long term behavior. To determine the mechanical properties diffusion couples were aged and 5 separate intermetallic compounds were melted using the pure elements Cu and Al. These samples were annealed in vacuum at high temperature and chemically analyzed in order to identify the intermetallic compounds. The measured hardness, indentation Young's moduli and densities of these intermetallic compounds are presented. Consequences of the thermo-mechanical properties of the intermetallic compounds are crucial for the prediction of the long term mechanical behavior of Cu-Al ball bonds.
{"title":"Mechanical properties of intermetallics formed during thermal aging of Cu-Al ball bonds","authors":"M.H.M. Koutersa, G.H.M. Gubbelsa, O. O'Halloranb, R. Rongenb, E.R. Weltevredena","doi":"10.1109/ESIME.2011.5765798","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765798","url":null,"abstract":"In high power automotive electronics copper wire bonding is regarded as most promising alternative for gold wire bonding in 1st level interconnects and therefore subjected to severe functional requirements. In the Cu-Al ball bond interface the growth of intermetallic compounds may deteriorate the wire bond. The thermo-mechanical properties of these intermetallic compounds are crucial in the prediction of the long term behavior. To determine the mechanical properties diffusion couples were aged and 5 separate intermetallic compounds were melted using the pure elements Cu and Al. These samples were annealed in vacuum at high temperature and chemically analyzed in order to identify the intermetallic compounds. The measured hardness, indentation Young's moduli and densities of these intermetallic compounds are presented. Consequences of the thermo-mechanical properties of the intermetallic compounds are crucial for the prediction of the long term mechanical behavior of Cu-Al ball bonds.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126928700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765806
Jianghai Gu, L. Liang, Y. Liu
A substructural method is developed to simulate the strip level warpage of a power module in assembly process. The comparison between substructure and non-substructure methods is presented and discussed. Parametric design of experimental (DoE) study on low side (LS) and high side (HS) die thickness, epoxy mold compound (EMC) thicknenss, as well the Young's modulus Ez of prepreg and Young's modulus of EMC is conducted in the simulation.
{"title":"A substructure method for strip level warpage simulation of a power module in assembly process","authors":"Jianghai Gu, L. Liang, Y. Liu","doi":"10.1109/ESIME.2011.5765806","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765806","url":null,"abstract":"A substructural method is developed to simulate the strip level warpage of a power module in assembly process. The comparison between substructure and non-substructure methods is presented and discussed. Parametric design of experimental (DoE) study on low side (LS) and high side (HS) die thickness, epoxy mold compound (EMC) thicknenss, as well the Young's modulus Ez of prepreg and Young's modulus of EMC is conducted in the simulation.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128079857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765790
R. Kregting, C. Yuan, A. Xiao, F. de Bruijn
In a RF power application such as the OMP, the wires are subjected to high current (because of the high power) and high temperature (because of the heat from IC and joule-heating from the wire itself). Moreover, the wire shape is essential to the RF performance. Hence, the aluminium wire is preferred and wedge-wedge wire bonding is widely used. As a result of poor wire shape design, wedge break can be found. Additionally, for the in-shin wires, which are typically very high and can reach high temperatures, failure by wire melting can be reached.
{"title":"Modelling aluminium wire bond reliability in high power OMP devices","authors":"R. Kregting, C. Yuan, A. Xiao, F. de Bruijn","doi":"10.1109/ESIME.2011.5765790","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765790","url":null,"abstract":"In a RF power application such as the OMP, the wires are subjected to high current (because of the high power) and high temperature (because of the heat from IC and joule-heating from the wire itself). Moreover, the wire shape is essential to the RF performance. Hence, the aluminium wire is preferred and wedge-wedge wire bonding is widely used. As a result of poor wire shape design, wedge break can be found. Additionally, for the in-shin wires, which are typically very high and can reach high temperatures, failure by wire melting can be reached.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128423216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765856
M. Kaltenbacher, H. Kock
The design of modern sensors, actuators as well as sensor-actuators systems, which are often Micro-Electro-Mechanical Systems (MEMS), strongly depends on the availability of appropriate computer aided engineering (CAE) tools, since the fabrication of each prototype is quite costly. We preset such a CAE tool, which solves the underlying system of partial di#erential equations (PDEs) by the Finite Element (FE) method. As a practical example we present investigations for a capacitive micromachined ultrasound transducers (CMUTs) as used for ultrasound imaging. Furthermore, we discuss a homogenization approach for the integrated power electronic structures on such a MEMS transducer to allow for a thermal simulation of the whole device.
{"title":"Simulation environment for MEMS sensors and actuators","authors":"M. Kaltenbacher, H. Kock","doi":"10.1109/ESIME.2011.5765856","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765856","url":null,"abstract":"The design of modern sensors, actuators as well as sensor-actuators systems, which are often Micro-Electro-Mechanical Systems (MEMS), strongly depends on the availability of appropriate computer aided engineering (CAE) tools, since the fabrication of each prototype is quite costly. We preset such a CAE tool, which solves the underlying system of partial di#erential equations (PDEs) by the Finite Element (FE) method. As a practical example we present investigations for a capacitive micromachined ultrasound transducers (CMUTs) as used for ultrasound imaging. Furthermore, we discuss a homogenization approach for the integrated power electronic structures on such a MEMS transducer to allow for a thermal simulation of the whole device.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130353334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765807
Sun Fenglian, Liu Yang, Wang Jiabing
Compared with widely used SAC305 (Sn-3.0Ag-0.5Cu) solder, low-Ag (Ag≤1%) SAC solder obviously shows advantages in cost and mechanical impact resistance, and disadvantages in worse wettability, higher melting point and degeneration in electromigration, which restrict its application. Therefore, adding some suitable elements to the solder to improve the solderability and mechanical performance is very important for applications. In this paper, the solderability and electromigration behavior of Low-Ag SAC solder were studied. The effect of adding Bi and Ni elements on the wettability, melting temperature and electromigration properties of SAC0705 (Sn-0.7Ag-0.5Cu) soldering on Cu pad were analysed by SEM and DSC investigations. Results indicate that addition of some Bi and Ni elements into SAC0705 could decrease the peak melting point of the solder, improve the wettability of solder on Cu pad obviously, and decrease the IMC grain size in interface. In addition, adding some Bi and Ni elements could restrict the electromigration behavior under high temperature and high density current stressing. It is found that the thermal condition has much more influence on electromigartion behavior. The IMC polarized distribution and copper consumption aggravate sharply under higher temperature and high density current stressing condition.
{"title":"Improving the solderability and electromigration behavior of Low-Ag SnAgCu soldering","authors":"Sun Fenglian, Liu Yang, Wang Jiabing","doi":"10.1109/ESIME.2011.5765807","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765807","url":null,"abstract":"Compared with widely used SAC305 (Sn-3.0Ag-0.5Cu) solder, low-Ag (Ag≤1%) SAC solder obviously shows advantages in cost and mechanical impact resistance, and disadvantages in worse wettability, higher melting point and degeneration in electromigration, which restrict its application. Therefore, adding some suitable elements to the solder to improve the solderability and mechanical performance is very important for applications. In this paper, the solderability and electromigration behavior of Low-Ag SAC solder were studied. The effect of adding Bi and Ni elements on the wettability, melting temperature and electromigration properties of SAC0705 (Sn-0.7Ag-0.5Cu) soldering on Cu pad were analysed by SEM and DSC investigations. Results indicate that addition of some Bi and Ni elements into SAC0705 could decrease the peak melting point of the solder, improve the wettability of solder on Cu pad obviously, and decrease the IMC grain size in interface. In addition, adding some Bi and Ni elements could restrict the electromigration behavior under high temperature and high density current stressing. It is found that the thermal condition has much more influence on electromigartion behavior. The IMC polarized distribution and copper consumption aggravate sharply under higher temperature and high density current stressing condition.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134317704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765763
F. Braghin, E. Leo, F. Resta, Stefano Cerra
The verification phase (Final Test) of inertial MEMS gyroscopes design properties takes a basic role in the sensors production. It's during this phase that devices are tested to reveal their effectiveness in the survey of the angular rate. The verification phase is based on a set of several tests able to evaluate the gyroscope characteristic properties, such as the resonance frequency, the quality factor, the quadrature error, and the gyroscope sensitivity. The main goal of the Final Test is to identify characteristic parameters as far as possible in order to save money: actually each gyroscope has to be tested before putting it on the market. The test bench used during the Final Test phase will be proposed as well as a new experimental procedure able to fast identify characteristic parameters. This new testing procedure has been applied both for single-axis and double-axis gyroscopes. The results achieved has been compared with a more accurate (but slower) experimental procedure.
{"title":"Mechanical model of a MEMS inertial rotational gyroscope","authors":"F. Braghin, E. Leo, F. Resta, Stefano Cerra","doi":"10.1109/ESIME.2011.5765763","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765763","url":null,"abstract":"The verification phase (Final Test) of inertial MEMS gyroscopes design properties takes a basic role in the sensors production. It's during this phase that devices are tested to reveal their effectiveness in the survey of the angular rate. The verification phase is based on a set of several tests able to evaluate the gyroscope characteristic properties, such as the resonance frequency, the quality factor, the quadrature error, and the gyroscope sensitivity. The main goal of the Final Test is to identify characteristic parameters as far as possible in order to save money: actually each gyroscope has to be tested before putting it on the market. The test bench used during the Final Test phase will be proposed as well as a new experimental procedure able to fast identify characteristic parameters. This new testing procedure has been applied both for single-axis and double-axis gyroscopes. The results achieved has been compared with a more accurate (but slower) experimental procedure.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127866041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765805
R. Qian, Yumin Liu, Y. Liu, Steve Martin, O. Jeon
In this paper, a novel power system module (PSM) is developed by integrating the vertical input capacitor inside the package. Comparing with the traditional PSM, the novel PSM has better electrical performance with less parasitic inductance and switching loss, due to a small loop from the input capacitor to the MOSFETs. A comprehensive modeling study is carried out to assess the assembly stress, thermal performance and reliability performance of the novel PSM. The impact of input capacitor height of the novel PSM is studied by building models with different input capacitor height designs. The modeling of the traditional PSM without the input capacitor is also conducted for comparison. The molding cure process is simulated to study the thermal stress induced by the CTE mismatch of different materials. The non-linear elastic plastic material constitutive model is applied to solder, clip and lead frame. The stress on die, solder paste and solder bump is evaluated and analyzed. Thermal characterization of all the package models is conducted to calculate the thermal resistance Rthja according to the JEDEC standards. The matrix method is used to obtain the thermal resistance of all dies, by applying power on different dies separately. The reliability performance is simulated and compared for all package models, including the autoclave (ACLV) test and preconditioning test. An equivalent CTE method is used to simulate the total stress after the ACLV and reflow process, including the hygroscopic stress, vapor pressure induced stress, and the CTE mismatch induced stress. Finally, the possible failure modes of the novel PSM are discussed.
{"title":"Thermal mechanical modeling and assessment for a novel power system module with vertical input capacitor","authors":"R. Qian, Yumin Liu, Y. Liu, Steve Martin, O. Jeon","doi":"10.1109/ESIME.2011.5765805","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765805","url":null,"abstract":"In this paper, a novel power system module (PSM) is developed by integrating the vertical input capacitor inside the package. Comparing with the traditional PSM, the novel PSM has better electrical performance with less parasitic inductance and switching loss, due to a small loop from the input capacitor to the MOSFETs. A comprehensive modeling study is carried out to assess the assembly stress, thermal performance and reliability performance of the novel PSM. The impact of input capacitor height of the novel PSM is studied by building models with different input capacitor height designs. The modeling of the traditional PSM without the input capacitor is also conducted for comparison. The molding cure process is simulated to study the thermal stress induced by the CTE mismatch of different materials. The non-linear elastic plastic material constitutive model is applied to solder, clip and lead frame. The stress on die, solder paste and solder bump is evaluated and analyzed. Thermal characterization of all the package models is conducted to calculate the thermal resistance Rthja according to the JEDEC standards. The matrix method is used to obtain the thermal resistance of all dies, by applying power on different dies separately. The reliability performance is simulated and compared for all package models, including the autoclave (ACLV) test and preconditioning test. An equivalent CTE method is used to simulate the total stress after the ACLV and reflow process, including the hygroscopic stress, vapor pressure induced stress, and the CTE mismatch induced stress. Finally, the possible failure modes of the novel PSM are discussed.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"4657 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125212082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765864
R. Poelma, H. Sadeghian, S. Koh, G.Q. Zhang
In this paper, the buckling behavior of fixed-fixed, both single- and multi- wall carbon nanotubes (CNTs) under axial compressive loads, are studied using analytical continuum theory and molecular dynamics (MD). An approach based on the tethering of atoms, is used to apply the boundary conditions and extract the reaction forces during the MD simulation. Both the analytical and the MD results agree well for slender CNTs (length=diameter = L/D ≥ 9), that show global buckling. The critical buckling load of non slender CNTs (L/D < 9) is overestimated by the analytical model due to the local buckling. Moreover, the effects of the vacancy defect position on the critical buckling load are studied at room temperature and at low temperature (1 K). It is concluded that the defects at the ends of the CNT and close to the middle of the CNT significantly reduce the critical buckling load and strain of CNTs at 1 K. However, the influence of vacancy defects on the critical buckling load and strain appears to be small at room temperature. The MD results can be used for developing more computationally efficient and accurate continuum descriptions of the CNT mechanics in future work.
{"title":"Buckling analysis of carbon nanotubes and the influence of defect position","authors":"R. Poelma, H. Sadeghian, S. Koh, G.Q. Zhang","doi":"10.1109/ESIME.2011.5765864","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765864","url":null,"abstract":"In this paper, the buckling behavior of fixed-fixed, both single- and multi- wall carbon nanotubes (CNTs) under axial compressive loads, are studied using analytical continuum theory and molecular dynamics (MD). An approach based on the tethering of atoms, is used to apply the boundary conditions and extract the reaction forces during the MD simulation. Both the analytical and the MD results agree well for slender CNTs (length=diameter = L/D ≥ 9), that show global buckling. The critical buckling load of non slender CNTs (L/D < 9) is overestimated by the analytical model due to the local buckling. Moreover, the effects of the vacancy defect position on the critical buckling load are studied at room temperature and at low temperature (1 K). It is concluded that the defects at the ends of the CNT and close to the middle of the CNT significantly reduce the critical buckling load and strain of CNTs at 1 K. However, the influence of vacancy defects on the critical buckling load and strain appears to be small at room temperature. The MD results can be used for developing more computationally efficient and accurate continuum descriptions of the CNT mechanics in future work.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"362 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134114121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765842
Lei Liu, Daoguo Yang, G.Q. Zhang, Zhi You, Fengze Hou, Dongjing Liu
Compared with incandescent lamps and fluorescent lamps, nowadays LEDs (Light Emitting Diodes) are power saving, environment-friendly, and have the advantages of long lifetime and flexible color output. Therefore, LEDs are being widely used in many fields. In this paper, three high-power LEDs packaging modules with different packaging structures were selected to do the performance analysis based on the experiments. In the measurement, the LED junction temperature was controlled at seven levels (25°C, 50°C, 65°C, 75°C, 85°C, 95C, 100°C) in sequence. The thermal variation of some photoelectric parameters for LED packaging modules, such as forward voltage, relative flux output, correlated color temperature (CCT), color rending index (Ra), luminous efficiency and spectrum, were focused on and analyzed here. The experimental results demonstrated that the luminous flux, luminous efficacy and forward voltage of LEDs decreased with the increase of the junction temperature, but these three LEDs packaging modules have different varieties on CRI, CCT and spectrum. The related reasons were analyzed briefly in this paper.
{"title":"Thermal performance analysis of photoelectric parameters on high-power LEDs packaging modules","authors":"Lei Liu, Daoguo Yang, G.Q. Zhang, Zhi You, Fengze Hou, Dongjing Liu","doi":"10.1109/ESIME.2011.5765842","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765842","url":null,"abstract":"Compared with incandescent lamps and fluorescent lamps, nowadays LEDs (Light Emitting Diodes) are power saving, environment-friendly, and have the advantages of long lifetime and flexible color output. Therefore, LEDs are being widely used in many fields. In this paper, three high-power LEDs packaging modules with different packaging structures were selected to do the performance analysis based on the experiments. In the measurement, the LED junction temperature was controlled at seven levels (25°C, 50°C, 65°C, 75°C, 85°C, 95C, 100°C) in sequence. The thermal variation of some photoelectric parameters for LED packaging modules, such as forward voltage, relative flux output, correlated color temperature (CCT), color rending index (Ra), luminous efficiency and spectrum, were focused on and analyzed here. The experimental results demonstrated that the luminous flux, luminous efficacy and forward voltage of LEDs decreased with the increase of the junction temperature, but these three LEDs packaging modules have different varieties on CRI, CCT and spectrum. The related reasons were analyzed briefly in this paper.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134246284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765849
S. Koh, A. Saxena, W. V. van Driel, G.Q. Zhang, R. Tummala
ITRS has predicted that integrated chip (IC) packages will have interconnections with I/O pitch of 90 nm by the year 2018. Lead-based solder materials in flip chip technology will not be able to satisfy the thermal mechanical requirement these fine pitches. Of all the known interconnect technologies, nanostructure interconnects such as nanocrystalline Cu are the most promising technology to meet the high mechanical reliability and electrical requirements of next generation devices. However, there is a need to fully characterize their fatigue properties. In this research, numerical analysis has been employed to study the semi-elliptical crack growth and shape evolution in nanostructured interconnects subject to uniaxial fatigue loading. The results indicate that nanocrystalline copper is in fact a suitable candidate for ultra-fine pitch interconnects applications. This study also predicts that crack growth is a relatively small portion of the total fatigue life of interconnects under LCF conditions. Hence, crack initiation life is the main factor in determining the fatigue life of interconnects.
{"title":"Low cycle fatigue crack growth in nanostructure copper","authors":"S. Koh, A. Saxena, W. V. van Driel, G.Q. Zhang, R. Tummala","doi":"10.1109/ESIME.2011.5765849","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765849","url":null,"abstract":"ITRS has predicted that integrated chip (IC) packages will have interconnections with I/O pitch of 90 nm by the year 2018. Lead-based solder materials in flip chip technology will not be able to satisfy the thermal mechanical requirement these fine pitches. Of all the known interconnect technologies, nanostructure interconnects such as nanocrystalline Cu are the most promising technology to meet the high mechanical reliability and electrical requirements of next generation devices. However, there is a need to fully characterize their fatigue properties. In this research, numerical analysis has been employed to study the semi-elliptical crack growth and shape evolution in nanostructured interconnects subject to uniaxial fatigue loading. The results indicate that nanocrystalline copper is in fact a suitable candidate for ultra-fine pitch interconnects applications. This study also predicts that crack growth is a relatively small portion of the total fatigue life of interconnects under LCF conditions. Hence, crack initiation life is the main factor in determining the fatigue life of interconnects.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124177419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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