Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765843
E. Bertarelli, R. Ardito, A. Greiner, J. Korvink, A. Corigliano
In this work, electrostatic stability of microplate actuators is investigated. In particular, the possibility to improve device stability by adopting charge control is discussed. The parallel plate actuator is first introduced as case study. Then, a one degree-of freedom model is obtained for microplate electromechanics. The parasitic capacitance arising from the non-uniform device deformation is evaluated. This practically leads to a reduced capacitance feedback with respect to parallel plate systems. Consequently, a limited stabilizing effect of charge drive can be obtained. The analysis of microplate behaviour is completed by the evaluation of adhesion (stiction) when eventually pull-in is reached.
{"title":"Design issues in electrostatic microplate actuators: Device stability and post pull-in behaviour","authors":"E. Bertarelli, R. Ardito, A. Greiner, J. Korvink, A. Corigliano","doi":"10.1109/ESIME.2011.5765843","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765843","url":null,"abstract":"In this work, electrostatic stability of microplate actuators is investigated. In particular, the possibility to improve device stability by adopting charge control is discussed. The parallel plate actuator is first introduced as case study. Then, a one degree-of freedom model is obtained for microplate electromechanics. The parasitic capacitance arising from the non-uniform device deformation is evaluated. This practically leads to a reduced capacitance feedback with respect to parallel plate systems. Consequently, a limited stabilizing effect of charge drive can be obtained. The analysis of microplate behaviour is completed by the evaluation of adhesion (stiction) when eventually pull-in is reached.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125561713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765777
K. Jansen, J. de Vreugd, L. Ernst
Warpage of flat packages is partly due to chemical shrinkage of the molding compound during cure and partly due to differences in thermal contraction in the subsequent cooling stage. The latter effect is relatively easy to incorporate in numerical simulations but the cure-induced shrinkage effect is not and is therefore often neglected in warpage simulations. Recent validation studies however showed that it is essential that both effects are taken into account.
{"title":"Analytical estimate for cure-induced stresses and warpage in flat packages","authors":"K. Jansen, J. de Vreugd, L. Ernst","doi":"10.1109/ESIME.2011.5765777","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765777","url":null,"abstract":"Warpage of flat packages is partly due to chemical shrinkage of the molding compound during cure and partly due to differences in thermal contraction in the subsequent cooling stage. The latter effect is relatively easy to incorporate in numerical simulations but the cure-induced shrinkage effect is not and is therefore often neglected in warpage simulations. Recent validation studies however showed that it is essential that both effects are taken into account.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124915302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765854
B. Platek, T. Falat, J. Felba
In the current paper the influence of dynamics simulation parameters on thermal conductivity of (10,10) CNT at room temperature in ballistic regime was investigated. The parameter were values of kinetic energy used to enforce the heat flux and the time step of simulation in NVE ensemble. As a criterion to evaluate the results the Pearson's coefficient and the standard deviation was adopted. To calculate the thermal conductivity the non-equilibrium molecular dynamics technique was implemented in commercially available software for molecular dynamics.
{"title":"The influence of molecular dynamics simulation parameters on the accuracy of carbon nanotubes thermal conductivity calculations","authors":"B. Platek, T. Falat, J. Felba","doi":"10.1109/ESIME.2011.5765854","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765854","url":null,"abstract":"In the current paper the influence of dynamics simulation parameters on thermal conductivity of (10,10) CNT at room temperature in ballistic regime was investigated. The parameter were values of kinetic energy used to enforce the heat flux and the time step of simulation in NVE ensemble. As a criterion to evaluate the results the Pearson's coefficient and the standard deviation was adopted. To calculate the thermal conductivity the non-equilibrium molecular dynamics technique was implemented in commercially available software for molecular dynamics.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122643418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765830
R. Metasch, G. Rodrigues, M. Roellig, P. Wendhausen, K. Wolter
This paper presents a comparison of fatigue experiments with the SnAg3.5 alloy tested with different methods under a constant temperature of 75 °C. Cyclic constant rate experiments with constant strain rates of ±1E-3 1/s were used to determine Coffin-Manson parameters. Furthermore the constant rate behaviour was also compared with slower strain rates, with combined relaxation experiments and constant force experiments.
{"title":"Study of constant rate and constant force low cycle fatigue methods for solder characterization","authors":"R. Metasch, G. Rodrigues, M. Roellig, P. Wendhausen, K. Wolter","doi":"10.1109/ESIME.2011.5765830","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765830","url":null,"abstract":"This paper presents a comparison of fatigue experiments with the SnAg3.5 alloy tested with different methods under a constant temperature of 75 °C. Cyclic constant rate experiments with constant strain rates of ±1E-3 1/s were used to determine Coffin-Manson parameters. Furthermore the constant rate behaviour was also compared with slower strain rates, with combined relaxation experiments and constant force experiments.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129565623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765803
S. Ranvier, S. Paquay, S. Requier, H. Lamy, V. Rochus, L. Francis, P. Rochus
In this paper, several physical phenomena that are usually not taken into account in MEMS simulations are considered for the simulation of a MEMS xylophone bar magnetometer. These phenomena are the temperature dependency of the material properties, the strong coupling between various fields of physics (thermal, electric and mechanical) and the stress produced by the change of temperature inside the structure. It is shown that the temperature dependency of the material properties has a relatively small influence whereas the pre-stress has a significant one. Because of the pre-stressed state, the deformation of the bar at the fundamental frequency is not a typical first mode vibration but it exhibits additional waves between the linkages, where the bar is stressed, which significantly decrease the amplitude of the deflection.
{"title":"Influence of multiphysics couplings on the performance of a MEMS magnetometer","authors":"S. Ranvier, S. Paquay, S. Requier, H. Lamy, V. Rochus, L. Francis, P. Rochus","doi":"10.1109/ESIME.2011.5765803","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765803","url":null,"abstract":"In this paper, several physical phenomena that are usually not taken into account in MEMS simulations are considered for the simulation of a MEMS xylophone bar magnetometer. These phenomena are the temperature dependency of the material properties, the strong coupling between various fields of physics (thermal, electric and mechanical) and the stress produced by the change of temperature inside the structure. It is shown that the temperature dependency of the material properties has a relatively small influence whereas the pre-stress has a significant one. Because of the pre-stressed state, the deformation of the bar at the fundamental frequency is not a typical first mode vibration but it exhibits additional waves between the linkages, where the bar is stressed, which significantly decrease the amplitude of the deflection.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130322749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765860
M. Sadeghinia, K. Jansen, L. Ernst, G. Schlottig, H. Pape
Delamination of interfaces is known as one of the root causes of failure in microelectronic industry and therefore is getting more and more attention. In order to be able for judging the risk of the interface fracture, the critical fracture properties of the interfaces should be available i.e. Interfacial fracture toughness. Interfacial fracture toughness is highly dependent to temperature, moisture and mode mixity. This work deals with the fracture toughness measurements of an EMC-Cu lead frame interface under pressure cooker conditions ( >100 °C & 100% RH). To deal with it, a chamber with high pressure, i.e. pressure cooker or pressure vessel, is needed. A mixed mode bending setup is installed in the pressure chamber. This will make it possible to have a prescribed opening displacement under combined mode I/II conditions on a bi-material specimen
{"title":"Fracture toughness of Cu-EMC interfaces under pressure cooker conditions","authors":"M. Sadeghinia, K. Jansen, L. Ernst, G. Schlottig, H. Pape","doi":"10.1109/ESIME.2011.5765860","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765860","url":null,"abstract":"Delamination of interfaces is known as one of the root causes of failure in microelectronic industry and therefore is getting more and more attention. In order to be able for judging the risk of the interface fracture, the critical fracture properties of the interfaces should be available i.e. Interfacial fracture toughness. Interfacial fracture toughness is highly dependent to temperature, moisture and mode mixity. This work deals with the fracture toughness measurements of an EMC-Cu lead frame interface under pressure cooker conditions ( >100 °C & 100% RH). To deal with it, a chamber with high pressure, i.e. pressure cooker or pressure vessel, is needed. A mixed mode bending setup is installed in the pressure chamber. This will make it possible to have a prescribed opening displacement under combined mode I/II conditions on a bi-material specimen","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130966823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765768
L. Dowhan, A. Wymyslowski, O. Wittler
Nanoindentation is one of the most known method for investigating the properties of thin films. The materials can be assessed by means of elastic mechanical properties (hardness and Young's modulus). However, the author's research works show that it is possible to obtain the elastic as well as the plastic material behavior of the investigated thin layer. It can be done by using the nanoindentation experiment and the numerical simulations. This paper focuses then on investigation of thin metal layers by nanoindentation with a support of numerical methods, such as finite element method and numerical optimization processes. Additionally, the 3-level, full factorial design of experiment (DOE) process was applied. In order to carry out such experiment 27 samples were prepared and taken into account: 3 different materials with 3 different thickness's values sputtered on 3 different substrates. The results were then processed by the numerical methods in order to achieve more information about the materials — mainly the plastic behaviour.
{"title":"Investigation of thin films by nanoindentation with doe and numerical methods","authors":"L. Dowhan, A. Wymyslowski, O. Wittler","doi":"10.1109/ESIME.2011.5765768","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765768","url":null,"abstract":"Nanoindentation is one of the most known method for investigating the properties of thin films. The materials can be assessed by means of elastic mechanical properties (hardness and Young's modulus). However, the author's research works show that it is possible to obtain the elastic as well as the plastic material behavior of the investigated thin layer. It can be done by using the nanoindentation experiment and the numerical simulations. This paper focuses then on investigation of thin metal layers by nanoindentation with a support of numerical methods, such as finite element method and numerical optimization processes. Additionally, the 3-level, full factorial design of experiment (DOE) process was applied. In order to carry out such experiment 27 samples were prepared and taken into account: 3 different materials with 3 different thickness's values sputtered on 3 different substrates. The results were then processed by the numerical methods in order to achieve more information about the materials — mainly the plastic behaviour.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133568366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a thermal analysis result for a 3D heterogeneous embedded system integration MorPACK (morphing package) platform. The MorPACK platform is stacked by heterogeneous submodules composed of bare dies, a substrate, connection bridges, and solder balls. Since the tiny, heterogeneous and integrable characteristics of MorPACK platform, it needs to be fabricated in high-density and laminar structure. The cooling ability of forced convection is restricted. This study presents an important characteristic for this 3D structure and two indications to optimize thermal solution for MorPACK structure. The characteristic shows the lowest layer owns the best cooling condition, so the bare die chip with highest power consumption should be placed on the lowest layer. It achieves cooling a 0.45-W consuming chip by 12-degree more than it put on the top layer. One of the indications shows the vertical thermal conductivity can be improved by filling up whole MorPACK with mold material. This skill efficiently cools down the 0.45-W consuming chip by 10-degree more than non-filled-up structure. The other indication shows removing the connection bridges and cutting out the substrate to make a room space for chip placement. With result shown, 50 % height and volume of MorPACK can be minimized and also reduce thermal resistance in out-plan direction.
{"title":"A study on thermal analysis for 3D heterogenous embedded system integration platform MorPACK","authors":"Jin-Ju Chue, Chih-Chyau Yang, Shih-Lun Chen, Chun-Chieh Chiu, Yi-Jun Liu, Chun-Chieh Chu, Chien‐Ming Wu, Chun-Ming Huang","doi":"10.1109/ESIME.2011.5765819","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765819","url":null,"abstract":"This paper presents a thermal analysis result for a 3D heterogeneous embedded system integration MorPACK (morphing package) platform. The MorPACK platform is stacked by heterogeneous submodules composed of bare dies, a substrate, connection bridges, and solder balls. Since the tiny, heterogeneous and integrable characteristics of MorPACK platform, it needs to be fabricated in high-density and laminar structure. The cooling ability of forced convection is restricted. This study presents an important characteristic for this 3D structure and two indications to optimize thermal solution for MorPACK structure. The characteristic shows the lowest layer owns the best cooling condition, so the bare die chip with highest power consumption should be placed on the lowest layer. It achieves cooling a 0.45-W consuming chip by 12-degree more than it put on the top layer. One of the indications shows the vertical thermal conductivity can be improved by filling up whole MorPACK with mold material. This skill efficiently cools down the 0.45-W consuming chip by 10-degree more than non-filled-up structure. The other indication shows removing the connection bridges and cutting out the substrate to make a room space for chip placement. With result shown, 50 % height and volume of MorPACK can be minimized and also reduce thermal resistance in out-plan direction.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129086053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765816
A. Y. Goharrizi, M. Pourfath, M. Fathipour, H. Kosina
The electronic properties of graphene nano-ribbons in the presence of line-edge roughness scattering are studied. The conductance, the mean free path, and the localization length of carriers are analytically derived using an effective mass model for the band structure. The model developed provides a deep insight into the operation of graphene nanoribbon devices in the presence of line-edge roughness. The effects of geometrical parameters on the conductance of graphene nanoribbons are estimated assuming a diffusive transport regime. However, in the presence of disorder, localization of carriers can occur, which can significantly reduce the conductance of the device. The effect of localization on the conductance of rough nanoribbons is studied analytically. Since this regime is not suitable for the operation of electronic devices, one can employ these models to obtain critical geometrical parameters to suppress the localization of carriers in graphene nanoribbon devices.
{"title":"Compact model for the electronic properties of edge-disordered graphene nanoribbons","authors":"A. Y. Goharrizi, M. Pourfath, M. Fathipour, H. Kosina","doi":"10.1109/ESIME.2011.5765816","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765816","url":null,"abstract":"The electronic properties of graphene nano-ribbons in the presence of line-edge roughness scattering are studied. The conductance, the mean free path, and the localization length of carriers are analytically derived using an effective mass model for the band structure. The model developed provides a deep insight into the operation of graphene nanoribbon devices in the presence of line-edge roughness. The effects of geometrical parameters on the conductance of graphene nanoribbons are estimated assuming a diffusive transport regime. However, in the presence of disorder, localization of carriers can occur, which can significantly reduce the conductance of the device. The effect of localization on the conductance of rough nanoribbons is studied analytically. Since this regime is not suitable for the operation of electronic devices, one can employ these models to obtain critical geometrical parameters to suppress the localization of carriers in graphene nanoribbon devices.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129998141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765821
C. Comi, A. Corigliano, G. Langfelder, A. Longoni, A. Tocchio
This work is focussed on the nonlinear dynamic response of electrostatically actuated micro-resonators. A single span beam axially constrained at both end, possibly with elastic constraints, is considered as representative of different common layout of micro-resonators. An analytical model, based on the Hamilton's principle, accounting for mechanical and electrical nonlinearities is derived. The analytical prediction is compared with experimental measurements obtained on a L-shaped micro-resonator.
{"title":"On the nonlinear behaviour of MEMS resonators","authors":"C. Comi, A. Corigliano, G. Langfelder, A. Longoni, A. Tocchio","doi":"10.1109/ESIME.2011.5765821","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765821","url":null,"abstract":"This work is focussed on the nonlinear dynamic response of electrostatically actuated micro-resonators. A single span beam axially constrained at both end, possibly with elastic constraints, is considered as representative of different common layout of micro-resonators. An analytical model, based on the Hamilton's principle, accounting for mechanical and electrical nonlinearities is derived. The analytical prediction is compared with experimental measurements obtained on a L-shaped micro-resonator.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126474863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：