Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765759
N. Iwamoto
Developing the stress response using the molecular and mesoscale levels is fairly reliable during the initial strain. For instance, modulus is a property that can be established using these techniques and the continuity of scale suggests that both may be used to establish modulus for parameterizing a macroscale model when measured properties are unavailable. However, the latter part of the stress/strain response that helps to establish ties to crack propagation still needs attention. One problem that was previously found was questionable lack of void formation in crosslinked systems due to superficially clean adhesive separation in the simulations. One way to overcome this lack of voiding was to determine how to develop bond breakage criterion that would allow surfaces to develop. This paper discusses development and application of bond breakage, and the impact on the simulated stress/strain curves using mesoscale models.
{"title":"Developing the mesoscale stress-strain curve to failure","authors":"N. Iwamoto","doi":"10.1109/ESIME.2011.5765759","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765759","url":null,"abstract":"Developing the stress response using the molecular and mesoscale levels is fairly reliable during the initial strain. For instance, modulus is a property that can be established using these techniques and the continuity of scale suggests that both may be used to establish modulus for parameterizing a macroscale model when measured properties are unavailable. However, the latter part of the stress/strain response that helps to establish ties to crack propagation still needs attention. One problem that was previously found was questionable lack of void formation in crosslinked systems due to superficially clean adhesive separation in the simulations. One way to overcome this lack of voiding was to determine how to develop bond breakage criterion that would allow surfaces to develop. This paper discusses development and application of bond breakage, and the impact on the simulated stress/strain curves using mesoscale models.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123610422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765813
D. Hofinger, M. Jungwirth, H. Pflugelmeier, A. Eder
Increasing power density in power electronics applications requires optimum design of the cooling system. Finding the optimum design by manufacturing prototypes is often difficult, time consuming and expensive due to the large number of variable parameters. The choice of the optimal heat sink-fan combination can be assisted by a number of different numerical simulation methods. In a case study of a typical heat sink-fan combination in a welding machine, a comparison is presented between a full CFD-simulation and an optimization routine, embedded in a Matlab graphical user interface. After a short review of the physical background and the underlying mathematical algorithm, the advantages and disadvantages/drawbacks are detailed.
{"title":"Heat sink design for optimal thermal management","authors":"D. Hofinger, M. Jungwirth, H. Pflugelmeier, A. Eder","doi":"10.1109/ESIME.2011.5765813","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765813","url":null,"abstract":"Increasing power density in power electronics applications requires optimum design of the cooling system. Finding the optimum design by manufacturing prototypes is often difficult, time consuming and expensive due to the large number of variable parameters. The choice of the optimal heat sink-fan combination can be assisted by a number of different numerical simulation methods. In a case study of a typical heat sink-fan combination in a welding machine, a comparison is presented between a full CFD-simulation and an optimization routine, embedded in a Matlab graphical user interface. After a short review of the physical background and the underlying mathematical algorithm, the advantages and disadvantages/drawbacks are detailed.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124581171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765850
S. Koh, W. V. Driel, Guoqi Zhang
Due to their long lifetime and high efficacy, solid state lighting (SSL) has the potential to revolutionize the illumination industry. The long lifetime claimed by the manufacturers is often based solely on the estimated depreciation of lumen for a single LED operating at 25°C. However, self heating and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of light emitting diode. Furthermore, each SSL system includes different components such as the optical part, electrical driver and interconnections. The failure/degradation of any components wills severely affects the performance and reliability of whole system and hence the weakest component will become the bottleneck for the reliability and lifetime of the module. Literature reviews of the factors influencing the life of LED lamps identified the degradation of the epoxy lens and plastic package due to the junction temperature and voltages as one of the common failure mode. In this research, a methodology to predict the degradation of the epoxy lens has been proposed. In order to correlate the mean time to failure as a function of the junction temperature and the inputted voltage, the simplified Eyring models had been proposed in this research. Since the life of a SSL system is subjected to varying loading condition, another objectives of this research is to present a methodology to predict the life of a SSL under changing condition.
{"title":"Degradation of epoxy lens materials in LED systems","authors":"S. Koh, W. V. Driel, Guoqi Zhang","doi":"10.1109/ESIME.2011.5765850","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765850","url":null,"abstract":"Due to their long lifetime and high efficacy, solid state lighting (SSL) has the potential to revolutionize the illumination industry. The long lifetime claimed by the manufacturers is often based solely on the estimated depreciation of lumen for a single LED operating at 25°C. However, self heating and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of light emitting diode. Furthermore, each SSL system includes different components such as the optical part, electrical driver and interconnections. The failure/degradation of any components wills severely affects the performance and reliability of whole system and hence the weakest component will become the bottleneck for the reliability and lifetime of the module. Literature reviews of the factors influencing the life of LED lamps identified the degradation of the epoxy lens and plastic package due to the junction temperature and voltages as one of the common failure mode. In this research, a methodology to predict the degradation of the epoxy lens has been proposed. In order to correlate the mean time to failure as a function of the junction temperature and the inputted voltage, the simplified Eyring models had been proposed in this research. Since the life of a SSL system is subjected to varying loading condition, another objectives of this research is to present a methodology to predict the life of a SSL under changing condition.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128504934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765789
C. Yuan, E. Weltevreden, Pieter van dan Akker, R. Kregting, J. de Vreugd, G. Zhang
Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes.
{"title":"FE modeling of Cu wire bond process and reliability","authors":"C. Yuan, E. Weltevreden, Pieter van dan Akker, R. Kregting, J. de Vreugd, G. Zhang","doi":"10.1109/ESIME.2011.5765789","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765789","url":null,"abstract":"Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"219 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130670433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765804
R. Qian, Y. Liu, Jihwan Kim, S. Martin
In this paper, a comprehensive modeling is carried out to investigate the dynamic behaviors of WL-CSP subjected to both flat and vertical drop impacts. The non-linear dynamic properties include solder, Cu pad and the metal stacking under the UBM. Both of the JEDEC standard flat drop test and the vertical drop test modeling for different solder bump height are studied. The results showed that, in the JEDEC standard flat drop test, Stress of the corner balls at each WL-CSP is much higher than the balls in other locations on the same components. The results showed the vertical drop stress is lower than the flat drop stress. The result of JEDEC standard flat drop test modeling showed that the higher solder joint of the WL-CSP can result in lower plastic impact energy but higher tensile (first principal) stress S1 at solder joint.
{"title":"Board level flat and vertical drop impact reliability for wafer level chip scale package","authors":"R. Qian, Y. Liu, Jihwan Kim, S. Martin","doi":"10.1109/ESIME.2011.5765804","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765804","url":null,"abstract":"In this paper, a comprehensive modeling is carried out to investigate the dynamic behaviors of WL-CSP subjected to both flat and vertical drop impacts. The non-linear dynamic properties include solder, Cu pad and the metal stacking under the UBM. Both of the JEDEC standard flat drop test and the vertical drop test modeling for different solder bump height are studied. The results showed that, in the JEDEC standard flat drop test, Stress of the corner balls at each WL-CSP is much higher than the balls in other locations on the same components. The results showed the vertical drop stress is lower than the flat drop stress. The result of JEDEC standard flat drop test modeling showed that the higher solder joint of the WL-CSP can result in lower plastic impact energy but higher tensile (first principal) stress S1 at solder joint.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131025723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765820
A. Alimardani, N. Manavizadeh, A. Afzali-Kusha, E. Asl-Soleimani
The loss due to lateral current flow in top diffused layer is one of the most important mechanisms of loss associated with top contacts and can be a limiting factor causing the reduction of cell efficiency especially for cells made to operate at high sun concentrations, because of higher level of current density and voltage drop. To optimize the design of grid contact, it is necessary to know the exact distributions of voltage and lateral and vertical current densities. In this work, a common structure of silicon solar cell is simulated at different levels of sun light concentrations where the lateral current density and voltage distributions are examined for different depths of emitter layer and bias voltages. In addition, the effect of lateral distribution of diffused layer on output power and efficiency for different illuminations is described. Also voltage and lateral current distributions in two bias voltages (maximum power voltage and open circuit voltage) and the influence of illumination are modeled by some analytical functions.
{"title":"Simulation of lateral effect in emitter region of silicon solar cells for concentrated sunlight","authors":"A. Alimardani, N. Manavizadeh, A. Afzali-Kusha, E. Asl-Soleimani","doi":"10.1109/ESIME.2011.5765820","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765820","url":null,"abstract":"The loss due to lateral current flow in top diffused layer is one of the most important mechanisms of loss associated with top contacts and can be a limiting factor causing the reduction of cell efficiency especially for cells made to operate at high sun concentrations, because of higher level of current density and voltage drop. To optimize the design of grid contact, it is necessary to know the exact distributions of voltage and lateral and vertical current densities. In this work, a common structure of silicon solar cell is simulated at different levels of sun light concentrations where the lateral current density and voltage distributions are examined for different depths of emitter layer and bias voltages. In addition, the effect of lateral distribution of diffused layer on output power and efficiency for different illuminations is described. Also voltage and lateral current distributions in two bias voltages (maximum power voltage and open circuit voltage) and the influence of illumination are modeled by some analytical functions.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131010502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765778
Cao Yi-jiang, Yufeng Zhang, Xu Biao, Y. Jinghua, Xiaowei Liu
In order to overcome the disadvantages of low mass transport efficiency of oxygen to the cathode and poor performance of passive micro direct methanol fuel cells (DMFC), the structures of the cathode current collector for the passive micro DMFC have been studied. The passive micro DMFC employing the cathode current collector with the planar perforated-plate structure has been fabricated. The effect of the anode methanol concentration and the opening area ratio of the cathode on the performance has been investigated. Owing to the influence of contact resistance and oxygen mass transport, the passive micro DMFC exhibits the optimal performance when opening ratio is 50%. Furthermore, the new parallel channels structure of the cathode current collector has been proposed, and the corresponding passive micro DMFC has also been fabricated by utilizing micro precision processing technology. The test results indicate that the mass transfer of oxygen and performance stability have been improved based on the cathode current collector with the parallel channels structure compared to the conventional planar structure. Moreover, a maximum output power density of 9.7 mW/cm2 is achieved. The above studies might be helpful for the developing and application of portable micro power systems.
{"title":"Study on passive micro direct methanol fuel cell","authors":"Cao Yi-jiang, Yufeng Zhang, Xu Biao, Y. Jinghua, Xiaowei Liu","doi":"10.1109/ESIME.2011.5765778","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765778","url":null,"abstract":"In order to overcome the disadvantages of low mass transport efficiency of oxygen to the cathode and poor performance of passive micro direct methanol fuel cells (DMFC), the structures of the cathode current collector for the passive micro DMFC have been studied. The passive micro DMFC employing the cathode current collector with the planar perforated-plate structure has been fabricated. The effect of the anode methanol concentration and the opening area ratio of the cathode on the performance has been investigated. Owing to the influence of contact resistance and oxygen mass transport, the passive micro DMFC exhibits the optimal performance when opening ratio is 50%. Furthermore, the new parallel channels structure of the cathode current collector has been proposed, and the corresponding passive micro DMFC has also been fabricated by utilizing micro precision processing technology. The test results indicate that the mass transfer of oxygen and performance stability have been improved based on the cathode current collector with the parallel channels structure compared to the conventional planar structure. Moreover, a maximum output power density of 9.7 mW/cm2 is achieved. The above studies might be helpful for the developing and application of portable micro power systems.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127185696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765844
Fengze Hou, Daoguo Yang, G.Q. Zhang, Yang Hai, Dongjing Liu, Lei Liu
In this paper, a 3 W high power LED array system with an in-line pin fin heat sink is designed, fabricated, and investigated for thermal transient analysis. Preliminary finite element simulation is conducted by ANSYS, and LED array average junction temperature is about 40.9°C. In the experiment, electrical test method is used to evaluate the heat dissipation effect of the LED array system. Experiment results show that the system works well. The cumulative thermal resistance of the system is about 6.7K/W, and corresponding LED array average junction temperature is about 40.5°C. It is found that the simulation result is consistent with the experimental result. The error is about 1%. It is also found that, in order to get accurate thermal resistance of every kind of material in the heat flow path, we should analyze the curves of cumulative and differential structure function simultaneously.
{"title":"Thermal transient analysis of LED array system with in-line pin fin heat sink","authors":"Fengze Hou, Daoguo Yang, G.Q. Zhang, Yang Hai, Dongjing Liu, Lei Liu","doi":"10.1109/ESIME.2011.5765844","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765844","url":null,"abstract":"In this paper, a 3 W high power LED array system with an in-line pin fin heat sink is designed, fabricated, and investigated for thermal transient analysis. Preliminary finite element simulation is conducted by ANSYS, and LED array average junction temperature is about 40.9°C. In the experiment, electrical test method is used to evaluate the heat dissipation effect of the LED array system. Experiment results show that the system works well. The cumulative thermal resistance of the system is about 6.7K/W, and corresponding LED array average junction temperature is about 40.5°C. It is found that the simulation result is consistent with the experimental result. The error is about 1%. It is also found that, in order to get accurate thermal resistance of every kind of material in the heat flow path, we should analyze the curves of cumulative and differential structure function simultaneously.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121077025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765853
T. Falat, B. Platek, J. Felba
Currently there is a lot of ongoing research towards estimation the thermal conductivity of carbon nanotubes (CNT). In the current paper thermal conductivity of SWNT were studied by using non-equilibrium molecular dynamics (NEMD) simulations (implemented in Materials Studio software, Accelerys Inc.). The NEMD technique is a direct approach which includes the computation of heat transport coefficients from flux-force relations, analogous to the macroscopic definition in irreversible thermodynamics. Simulations in nano- and atomic-scale can cause problems with model validation and with algorithm verification. The novel approach based on simulation of known material such as silicon were applied. The current paper focuses on the obtained results of model validation and verification of simulation algorithm.
{"title":"Non-equilibrium molecular dynamics simulation of heat transfer in carbon nanotubes - verification and model validation","authors":"T. Falat, B. Platek, J. Felba","doi":"10.1109/ESIME.2011.5765853","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765853","url":null,"abstract":"Currently there is a lot of ongoing research towards estimation the thermal conductivity of carbon nanotubes (CNT). In the current paper thermal conductivity of SWNT were studied by using non-equilibrium molecular dynamics (NEMD) simulations (implemented in Materials Studio software, Accelerys Inc.). The NEMD technique is a direct approach which includes the computation of heat transport coefficients from flux-force relations, analogous to the macroscopic definition in irreversible thermodynamics. Simulations in nano- and atomic-scale can cause problems with model validation and with algorithm verification. The novel approach based on simulation of known material such as silicon were applied. The current paper focuses on the obtained results of model validation and verification of simulation algorithm.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115680727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765780
E. Almagro, B. B. Hornales, Marvin R. Gestole
This paper presents the results of a numerical analysis on the electrical interconnect options of a Power QFN (PQFN) package, to explore and compare the RDS(ON) performance at DC condition. The modeling involves the PQFN 5mm × 6mm package which initially uses Aluminum wire bonds for interconnection. Competition in the market in terms of better electrical performance packages challenge semiconductor companies to venture into new technology, innovation, process, wafer fabrication, package design changes. For the PQFN, apart from having a thin die with low specific RDS(ON), it is necessary to choose an interconnect which is also electrically efficient. Among the choices aside from the traditional Aluminum round wires are Aluminum ribbon bonding and Cu clip bonding. The comparison is purely based on the electrical performance and the study does not include the cost factors and other material related effects such as stress performance, etc. A commercial FEA code, ANSYS®, is utilized in this study while Solidworks® is used for CAD.
{"title":"FEA study on electrical interconnects for a power QFN package","authors":"E. Almagro, B. B. Hornales, Marvin R. Gestole","doi":"10.1109/ESIME.2011.5765780","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765780","url":null,"abstract":"This paper presents the results of a numerical analysis on the electrical interconnect options of a Power QFN (PQFN) package, to explore and compare the RDS(ON) performance at DC condition. The modeling involves the PQFN 5mm × 6mm package which initially uses Aluminum wire bonds for interconnection. Competition in the market in terms of better electrical performance packages challenge semiconductor companies to venture into new technology, innovation, process, wafer fabrication, package design changes. For the PQFN, apart from having a thin die with low specific RDS(ON), it is necessary to choose an interconnect which is also electrically efficient. Among the choices aside from the traditional Aluminum round wires are Aluminum ribbon bonding and Cu clip bonding. The comparison is purely based on the electrical performance and the study does not include the cost factors and other material related effects such as stress performance, etc. A commercial FEA code, ANSYS®, is utilized in this study while Solidworks® is used for CAD.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114775356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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