Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765794
S. Rzepka, H. Walter, R. Pantou, Y. Freed, B. Michel
The paper addresses the determination of the effects of time and temperature on strength and lifetime of structural polymer composites. For some time, this topic has already concerned the aerospace industry during their fatigue tests of light structures made of fiber reinforced polymer (FRP) under various loading modes. More recently, the issue has also become of great relevance to applications in microelectronics and micro/nano system technologies. Following the More-than-Moore development strategy, substrates and new innovative structural parts of those systems are exposed to complex and very challenging service conditions (e.g., implantable bio-medical, aeronautic, or automotive applications). In this paper, a new approach to accelerated testing highlighted in open literature has been assessed with respect to its potential for determining the fatigue behavior of composite materials used in microelectronics and micro/nano system technologies.
{"title":"Accelerated fatigue testing methodology for reliability assessments of fiber reinforced composite polymer materials in micro/nano systems","authors":"S. Rzepka, H. Walter, R. Pantou, Y. Freed, B. Michel","doi":"10.1109/ESIME.2011.5765794","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765794","url":null,"abstract":"The paper addresses the determination of the effects of time and temperature on strength and lifetime of structural polymer composites. For some time, this topic has already concerned the aerospace industry during their fatigue tests of light structures made of fiber reinforced polymer (FRP) under various loading modes. More recently, the issue has also become of great relevance to applications in microelectronics and micro/nano system technologies. Following the More-than-Moore development strategy, substrates and new innovative structural parts of those systems are exposed to complex and very challenging service conditions (e.g., implantable bio-medical, aeronautic, or automotive applications). In this paper, a new approach to accelerated testing highlighted in open literature has been assessed with respect to its potential for determining the fatigue behavior of composite materials used in microelectronics and micro/nano system technologies.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115718218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765801
J. Auersperg, R. Dudek, J. Oswald, B. Michel
As a consequence of increasing functional density and miniaturization in microelectronics new low-k and ultra-low-k materials are going to be increasingly used in Back-end of line (BEoL) layers of advanced CMOS technologies. These ongoing trends together with the transition to the use of TSVs for 3D-IC-integration cause novel challenges for reliability analysis and prediction of relevant electronics assemblies. The optimization of fracture and fatigue resistance of those BEoL structures under manufacturing/packaging (during lead-free reflow-soldering, in particular) as well as chip package interaction (CPI) aspects is a key for further enhancements - see also [1]. In particular in this context the evaluation of the risk of delamination at bi-material interfaces and damaging and cracking of materials needs to be improved. The application of advanced finite element techniques combined with experimental observations and validations, provide a way to gain more fundamental knowledge and ultimately, to understand, predict and prevent reliability issues. However, cracking and delamination risk evaluations hang behind the needs - especially for nonlinear, transient, thermal loading of bi-material interface fracture. At this point, the correct mode mixity separation at bi-material interface cracks is a precondition for proper delamination risk evaluation. However, different approaches are known to be dependent on mesh density, integration path and/or reference length. We discuss the use of VCCT and integral fracture concepts for bulk and bi-material interface fracture in multi-scale and multi-failure modeling approaches. Energy release rate (ERR), stress intensity factors (SIF) and the related phase angles as results of the different approaches will be investigated and compared. Analytic relations between them will be pointed out and verified. Therefore, the frequently investigated role of reference length, normalizing length and path dependence for the calculation of the fracture parameters is discussed. Effects on the fracture parameters are finally discussed related to the cracking risk of BEoL structures. The authors combine these numerical approaches with experimental results in order to optimize the toughness for bulk material fracture and interface delamination with regard to structural modifications.
{"title":"Interaction integral and mode separation for BEoL-cracking and -delamination investigations under 3D-IC integration aspects","authors":"J. Auersperg, R. Dudek, J. Oswald, B. Michel","doi":"10.1109/ESIME.2011.5765801","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765801","url":null,"abstract":"As a consequence of increasing functional density and miniaturization in microelectronics new low-k and ultra-low-k materials are going to be increasingly used in Back-end of line (BEoL) layers of advanced CMOS technologies. These ongoing trends together with the transition to the use of TSVs for 3D-IC-integration cause novel challenges for reliability analysis and prediction of relevant electronics assemblies. The optimization of fracture and fatigue resistance of those BEoL structures under manufacturing/packaging (during lead-free reflow-soldering, in particular) as well as chip package interaction (CPI) aspects is a key for further enhancements - see also [1]. In particular in this context the evaluation of the risk of delamination at bi-material interfaces and damaging and cracking of materials needs to be improved. The application of advanced finite element techniques combined with experimental observations and validations, provide a way to gain more fundamental knowledge and ultimately, to understand, predict and prevent reliability issues. However, cracking and delamination risk evaluations hang behind the needs - especially for nonlinear, transient, thermal loading of bi-material interface fracture. At this point, the correct mode mixity separation at bi-material interface cracks is a precondition for proper delamination risk evaluation. However, different approaches are known to be dependent on mesh density, integration path and/or reference length. We discuss the use of VCCT and integral fracture concepts for bulk and bi-material interface fracture in multi-scale and multi-failure modeling approaches. Energy release rate (ERR), stress intensity factors (SIF) and the related phase angles as results of the different approaches will be investigated and compared. Analytic relations between them will be pointed out and verified. Therefore, the frequently investigated role of reference length, normalizing length and path dependence for the calculation of the fracture parameters is discussed. Effects on the fracture parameters are finally discussed related to the cracking risk of BEoL structures. The authors combine these numerical approaches with experimental results in order to optimize the toughness for bulk material fracture and interface delamination with regard to structural modifications.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132488478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765793
Xuejun Fan, Jie-Hua Zhao
In this paper, a damage mechanics-based continuum theory is developed to provide a theoretical framework for multi-field problems involving moisture diffusion, heat conduction, moisture evaporation, void growth, and material deformation in a temperature and time-dependent process in encapsulated microelectronics devices. The analysis of moisture diffusion using normalized moisture concentration is re-examined under various conditions, and the applicability of the thermal-moisture analogy is discussed. Effective stress concept is introduced to consider the effect of vapor pressure in the development of a continuum mechanics framework. It turns out that the volumetric strains consist of three parts: thermal expansion (or contraction), hygroscopic swelling, and vapor pressure-induced volumetric strains. Void volume fraction is introduced as a field variable to describe the damage progression. The evolution of void volume fraction is governed by the continuity equation. Vapor pressure is considered as another internal field variable, which is related to moisture evaporation. A complete set of multi-field governing equations are developed. A simplified process, which allows the coupled problem to be solved sequentially, is defined. A bi-material assembly is used to illustrate the multi-field solutions using ANSYS.
{"title":"Moisture diffusion and integrated stress analysis in encapsulated microelectronics devices","authors":"Xuejun Fan, Jie-Hua Zhao","doi":"10.1109/ESIME.2011.5765793","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765793","url":null,"abstract":"In this paper, a damage mechanics-based continuum theory is developed to provide a theoretical framework for multi-field problems involving moisture diffusion, heat conduction, moisture evaporation, void growth, and material deformation in a temperature and time-dependent process in encapsulated microelectronics devices. The analysis of moisture diffusion using normalized moisture concentration is re-examined under various conditions, and the applicability of the thermal-moisture analogy is discussed. Effective stress concept is introduced to consider the effect of vapor pressure in the development of a continuum mechanics framework. It turns out that the volumetric strains consist of three parts: thermal expansion (or contraction), hygroscopic swelling, and vapor pressure-induced volumetric strains. Void volume fraction is introduced as a field variable to describe the damage progression. The evolution of void volume fraction is governed by the continuity equation. Vapor pressure is considered as another internal field variable, which is related to moisture evaporation. A complete set of multi-field governing equations are developed. A simplified process, which allows the coupled problem to be solved sequentially, is defined. A bi-material assembly is used to illustrate the multi-field solutions using ANSYS.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132630576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765836
D. Weidmann, G. Dubois, M. Hertl, X. Chauffleur
The aim of this paper is to present the work we realized to determinate the strength of interfaces in a package. The work consisted of coupling experimental and modelling results obtained on the package. The proposed method is very interesting because it can be directly applied on every package design realized in the field of manufacturing. The process consists of cutting the package in some axes in order to create different stress zones. We study the package before and after cutting by TDM, which provides us the deformation history of the package. Then we also use SAM, a process which allows debonding localisation. By matching and fitting experimental data on simulation, we succeed in determining unknown properties.
{"title":"Determination of strength of interface in packages based on an approach using coupling of experimental and modeling results","authors":"D. Weidmann, G. Dubois, M. Hertl, X. Chauffleur","doi":"10.1109/ESIME.2011.5765836","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765836","url":null,"abstract":"The aim of this paper is to present the work we realized to determinate the strength of interfaces in a package. The work consisted of coupling experimental and modelling results obtained on the package. The proposed method is very interesting because it can be directly applied on every package design realized in the field of manufacturing. The process consists of cutting the package in some axes in order to create different stress zones. We study the package before and after cutting by TDM, which provides us the deformation history of the package. Then we also use SAM, a process which allows debonding localisation. By matching and fitting experimental data on simulation, we succeed in determining unknown properties.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131758342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765797
F. Casset, M. Cueff, E. Defay, G. Le Rhun, A. Suhm, P. Ancey, A. Devos
This paper presents the study of piezoelectric actuators. After the description of simulated actuators and simulation conditions, results will be discussed to define the best actuator design in terms of membrane displacement and compactness. The actuator behaviour under temperature variation is also checked.
{"title":"Piezoelectric membrane actuator design","authors":"F. Casset, M. Cueff, E. Defay, G. Le Rhun, A. Suhm, P. Ancey, A. Devos","doi":"10.1109/ESIME.2011.5765797","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765797","url":null,"abstract":"This paper presents the study of piezoelectric actuators. After the description of simulated actuators and simulation conditions, results will be discussed to define the best actuator design in terms of membrane displacement and compactness. The actuator behaviour under temperature variation is also checked.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125362834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765828
E. Marcault, T. Azoui, P. Tounsi, M. Breil, A. Bourennane, P. Dupuy
Based on 3D FEM electro-thermal simulations, we explore the thermal impact of source metallization ageing inducing a bonding wire lift off on a VDMOS device. This kind of failure is usually modeled by changing the geometry of the assembly[1][2], without considering the physical properties evolution of aged materials such as the source metallization [3]. This work aims to highlight the importance of taking into account material evolution due to ageing in 3D FEM electro-thermal simulations.
{"title":"Impact of VDMOS source metallization ageing in 3D FEM wire lift off modeling","authors":"E. Marcault, T. Azoui, P. Tounsi, M. Breil, A. Bourennane, P. Dupuy","doi":"10.1109/ESIME.2011.5765828","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765828","url":null,"abstract":"Based on 3D FEM electro-thermal simulations, we explore the thermal impact of source metallization ageing inducing a bonding wire lift off on a VDMOS device. This kind of failure is usually modeled by changing the geometry of the assembly[1][2], without considering the physical properties evolution of aged materials such as the source metallization [3]. This work aims to highlight the importance of taking into account material evolution due to ageing in 3D FEM electro-thermal simulations.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114488988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765855
P. Lall, Ryan Lowe, K. Goebel
Structural damage to BGA interconnects incurred during vibration testing has been monitored in the pre-failure space using resistance spectroscopy based state space vectors, rate of change of the state variable, and acceleration of the state variable. The technique is intended for condition monitoring in high reliability applications where the knowledge of impending failure is critical and the risks in terms of loss-of-functionality are too high to bear. Future state of the system has been estimated based on a second order Kalman Filter model and a Bayesian Framework. The measured state variable has been related to the underlying interconnect damage in the form of inelastic strain energy density. Performance of the prognostication health management algorithm during the vibration test has been quantified using performance evaluation metrics. The methodology has been demonstrated on leadfree area-array electronic assemblies subjected to vibration. Model predictions have been correlated with experimental data. The presented approach is applicable to functional systems where corner interconnects in area-array packages may be often redundant. Prognostic metrics including α-λ metric, sample standard deviation, mean square error, mean absolute percentage error, average bias, relative accuracy, and cumulative relative accuracy have been used to assess the performance of the damage proxies. The presented approach enables the estimation of residual life based on level of risk averseness.
{"title":"Prognostics and health monitoring of electronic systems","authors":"P. Lall, Ryan Lowe, K. Goebel","doi":"10.1109/ESIME.2011.5765855","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765855","url":null,"abstract":"Structural damage to BGA interconnects incurred during vibration testing has been monitored in the pre-failure space using resistance spectroscopy based state space vectors, rate of change of the state variable, and acceleration of the state variable. The technique is intended for condition monitoring in high reliability applications where the knowledge of impending failure is critical and the risks in terms of loss-of-functionality are too high to bear. Future state of the system has been estimated based on a second order Kalman Filter model and a Bayesian Framework. The measured state variable has been related to the underlying interconnect damage in the form of inelastic strain energy density. Performance of the prognostication health management algorithm during the vibration test has been quantified using performance evaluation metrics. The methodology has been demonstrated on leadfree area-array electronic assemblies subjected to vibration. Model predictions have been correlated with experimental data. The presented approach is applicable to functional systems where corner interconnects in area-array packages may be often redundant. Prognostic metrics including α-λ metric, sample standard deviation, mean square error, mean absolute percentage error, average bias, relative accuracy, and cumulative relative accuracy have been used to assess the performance of the damage proxies. The presented approach enables the estimation of residual life based on level of risk averseness.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129492184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765832
F. Kraemer, S. Wiese
The handling of photovoltaic cells is getting a growing concern. Due to the significant fraction of the material costs on the overall costs of solar wafers the cell thickness was reduced from initially 300 µm down to 200 µm or even 150 µm. At the same time, the size of typical cells remained at 156 × 156 mm2. Thus, solar cells have the same thickness like microelectronic chips but their size is about 10 to 15 times higher. Due to this bad aspect ratio, cells are fragile and breakage is an often observed problem during cell handling in common production lines.
{"title":"Development of a drop test methodology for solar cells with FEM simulations","authors":"F. Kraemer, S. Wiese","doi":"10.1109/ESIME.2011.5765832","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765832","url":null,"abstract":"The handling of photovoltaic cells is getting a growing concern. Due to the significant fraction of the material costs on the overall costs of solar wafers the cell thickness was reduced from initially 300 µm down to 200 µm or even 150 µm. At the same time, the size of typical cells remained at 156 × 156 mm2. Thus, solar cells have the same thickness like microelectronic chips but their size is about 10 to 15 times higher. Due to this bad aspect ratio, cells are fragile and breakage is an often observed problem during cell handling in common production lines.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124706676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765774
U. Zschenderlein, B. Wunderle
In this paper a simulation is presented which tracks photons through complex material systems. Besides the usual Compton and Rayleigh scattering that is covered in high energy radiography simulations the presented model considers Bragg-Laue diffraction. The implementation bases on a Monte Carlo code to account for the scattering during radiography. In this paper first results of the simulation are presented. A simple radiation as well as a diffraction experiment was setup. The attenuation coefficient and the position of the diffraction peaks drawn out of the simulation were in good agreement with the literature.
{"title":"Monte Carlo simulation of X-ray diffraction embedded in experimental determination of residual stresses in microsystems","authors":"U. Zschenderlein, B. Wunderle","doi":"10.1109/ESIME.2011.5765774","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765774","url":null,"abstract":"In this paper a simulation is presented which tracks photons through complex material systems. Besides the usual Compton and Rayleigh scattering that is covered in high energy radiography simulations the presented model considers Bragg-Laue diffraction. The implementation bases on a Monte Carlo code to account for the scattering during radiography. In this paper first results of the simulation are presented. A simple radiation as well as a diffraction experiment was setup. The attenuation coefficient and the position of the diffraction peaks drawn out of the simulation were in good agreement with the literature.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124145000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765758
Y. Abdul-Quadir, Perttu Heikkila, Teemu Lehmuspelto, J. Karppinen, T. Laurila, M. Paulasto-Krockel
Thermal Design of Li-ion battery cells/modules is necessary to ensure better cycle lifetime of the batteries. High power batteries (40Ah–100Ah) generate a significant amount of heat which needs to be dissipated somehow. In this work thermal experiments and simulation are utilized for better thermal design of battery module. The results indicate that liquid cooling is almost indispensible for high power battery modules. This methodology also ensures that the waiting period for battery cool down can also be reduced significantly which helps in better and proper utilization of the batteries.
{"title":"Thermal investigation of a battery module for work machines","authors":"Y. Abdul-Quadir, Perttu Heikkila, Teemu Lehmuspelto, J. Karppinen, T. Laurila, M. Paulasto-Krockel","doi":"10.1109/ESIME.2011.5765758","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765758","url":null,"abstract":"Thermal Design of Li-ion battery cells/modules is necessary to ensure better cycle lifetime of the batteries. High power batteries (40Ah–100Ah) generate a significant amount of heat which needs to be dissipated somehow. In this work thermal experiments and simulation are utilized for better thermal design of battery module. The results indicate that liquid cooling is almost indispensible for high power battery modules. This methodology also ensures that the waiting period for battery cool down can also be reduced significantly which helps in better and proper utilization of the batteries.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126272259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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