H. Hui, Y. Yakoubi, M. Lenczner, S. Cogan, A. Meister, M. Favre, R. Couturier, S. Domas
In this paper, we present new tools and results developed for Arrays of Microsystems and especially for Atomic Force Microscope (AFM) array design. For modeling, we developed a two-scale model of cantilever arrays in elastodynamics. A robust optimization toolbox is interfaced to aid for design before the microfabrication process. A model based algorithm of static state estimation using measurement of mechanical displacements by interferometry is stated. Quantization of interferometry data processing is analyzed for FPGA implementation. A robust H∞ filtering problem of the coupled cantilevers is solved for time-invariant system with random noise effects. Our solution allows semi-decentralized computing based on functional calculus that can be implemented by networks of distributed electronic circuits as shown in a previous paper.
{"title":"Modeling, filtering and optimization for AFM arrays","authors":"H. Hui, Y. Yakoubi, M. Lenczner, S. Cogan, A. Meister, M. Favre, R. Couturier, S. Domas","doi":"10.1109/DMEMS.2012.15","DOIUrl":"https://doi.org/10.1109/DMEMS.2012.15","url":null,"abstract":"In this paper, we present new tools and results developed for Arrays of Microsystems and especially for Atomic Force Microscope (AFM) array design. For modeling, we developed a two-scale model of cantilever arrays in elastodynamics. A robust optimization toolbox is interfaced to aid for design before the microfabrication process. A model based algorithm of static state estimation using measurement of mechanical displacements by interferometry is stated. Quantization of interferometry data processing is analyzed for FPGA implementation. A robust H∞ filtering problem of the coupled cantilevers is solved for time-invariant system with random noise effects. Our solution allows semi-decentralized computing based on functional calculus that can be implemented by networks of distributed electronic circuits as shown in a previous paper.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127699498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765857
M. Jungwirth, D. Hofinger, H. Weinzierl
In mechatronic systems basically electromagnetical-, thermal-, mechanical- or fluid -effects and their interactions occur. For the efficient optimal design of those systems it's essential to take into account those effects. This leads to a reduced number of prototypes and shortens the time to market.
{"title":"Simulation based design of mechatronic systems","authors":"M. Jungwirth, D. Hofinger, H. Weinzierl","doi":"10.1109/ESIME.2011.5765857","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765857","url":null,"abstract":"In mechatronic systems basically electromagnetical-, thermal-, mechanical- or fluid -effects and their interactions occur. For the efficient optimal design of those systems it's essential to take into account those effects. This leads to a reduced number of prototypes and shortens the time to market.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124666974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765767
M. Pustan, S. Paquay, V. Rochus, J. Golinval
The influence of the lower electrode positions on the dynamic response of polysilicon MEMS resonators is studied and presented in this paper. The change in the frequency response of investigated MEMS resonators as function of the lower electrode positions is measured using a vibrometer analyzer. The decrease in the amplitude and velocity of oscillations if the lower electrode is moved from the beam free-end toward to the beam anchor is experimental monitored. The measurements are performed in ambient conditions in order to characterize the forced-response Q-factor of samples. A decrease of the Q- factor if the lower electrode is moved toward to the beam anchor is experimental determined. Different responses of MEMS resonators may be obtained if the position of the lower electrode is modified. Indeed the resonator stiffness, velocity and amplitude of oscillations are changed.
{"title":"Effects of the electrode positions on the dynamical behaviour of electrostatically actuated MEMS resonators","authors":"M. Pustan, S. Paquay, V. Rochus, J. Golinval","doi":"10.1109/ESIME.2011.5765767","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765767","url":null,"abstract":"The influence of the lower electrode positions on the dynamic response of polysilicon MEMS resonators is studied and presented in this paper. The change in the frequency response of investigated MEMS resonators as function of the lower electrode positions is measured using a vibrometer analyzer. The decrease in the amplitude and velocity of oscillations if the lower electrode is moved from the beam free-end toward to the beam anchor is experimental monitored. The measurements are performed in ambient conditions in order to characterize the forced-response Q-factor of samples. A decrease of the Q- factor if the lower electrode is moved toward to the beam anchor is experimental determined. Different responses of MEMS resonators may be obtained if the position of the lower electrode is modified. Indeed the resonator stiffness, velocity and amplitude of oscillations are changed.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124670514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765808
M. Janicki, M. Zubert, A. Napieralski
This paper presents a methodology for the creation of reduced thermal models of electronic systems based on the knowledge of the system dynamic temperature response. The registration of thermal responses using equidistant sampling on a logarithmic time scale allows the proper identification of all the time constants in the responses. Knowing the entire time constant spectrum, it is possible to generate a reduced dynamic thermal model in the form of an RC Cauer ladder with a limited number of stages. This simple model assures not only short simulation time and provides excellent accuracy but also allows the identification of certain physical parameters of a system. The methodology is illustrated in the paper based on the example of discrete power devices attached to a heat sink and cooled with forced air flow. The reduced thermal model is suitable for the direct implementation in the SPICE simulator or almost any other multiphysics simulation environment.
{"title":"Generation of reduced thermal models of electronic systems from transient thermal response","authors":"M. Janicki, M. Zubert, A. Napieralski","doi":"10.1109/ESIME.2011.5765808","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765808","url":null,"abstract":"This paper presents a methodology for the creation of reduced thermal models of electronic systems based on the knowledge of the system dynamic temperature response. The registration of thermal responses using equidistant sampling on a logarithmic time scale allows the proper identification of all the time constants in the responses. Knowing the entire time constant spectrum, it is possible to generate a reduced dynamic thermal model in the form of an RC Cauer ladder with a limited number of stages. This simple model assures not only short simulation time and provides excellent accuracy but also allows the identification of certain physical parameters of a system. The methodology is illustrated in the paper based on the example of discrete power devices attached to a heat sink and cooled with forced air flow. The reduced thermal model is suitable for the direct implementation in the SPICE simulator or almost any other multiphysics simulation environment.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121132010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765858
D. Farley, A. Dasgupta, Y. Zhou, J. Caers, J. D. de Vries
This study focuses on quasi-static mechanical cycling durability of copper traces on printed wiring assemblies (PWAs). PWA specimens populated with Land Grid Array (LGA) components on copper-defined pads were cycled to failure under zero-to-max, three-point bending. Failure is defined in terms of electrical opens due to fatigue damage propagation through the entire cross-section of the trace. Failure statistics were collected and failure analysis was conducted to identify fatigue failures in the copper traces, near the connection to the solder pad.
{"title":"Fatigue model based on average cross-section strain of Cu trace cyclic bending","authors":"D. Farley, A. Dasgupta, Y. Zhou, J. Caers, J. D. de Vries","doi":"10.1109/ESIME.2011.5765858","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765858","url":null,"abstract":"This study focuses on quasi-static mechanical cycling durability of copper traces on printed wiring assemblies (PWAs). PWA specimens populated with Land Grid Array (LGA) components on copper-defined pads were cycled to failure under zero-to-max, three-point bending. Failure is defined in terms of electrical opens due to fatigue damage propagation through the entire cross-section of the trace. Failure statistics were collected and failure analysis was conducted to identify fatigue failures in the copper traces, near the connection to the solder pad.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115389420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765766
S. Chiang, T. Hung, Hsien-Chih Ou, K. Chiang
The Insulated Gate Bipolar Transistor (IGBT) module subjected to a power cycle test will induce a heat concentration zone, rapid change of temperature profile and non-uniform temperature distribution on the IGBT chip. The variation of junction temperature can affect the lifetime of the IGBT module. However, the test module contains several components with different scales and material characteristics. As such, it is difficult to analyze the thermal dissipation and temperature distribution of the IGBT chip under power cycle test conditions using conventional finite element modeling technique. A local/global methodology is proposed in this study, in conduction analysis, it only require to construct a local finite element model in conjunction with a set of specified boundary conditions (SBC) where the temperatures are obtained from the computational fluid dynamics (CFD) results, this hybrid modeling technology can make the analysis process easier and more convenient.
{"title":"Electro-thermal analysis of the Insulated Gate Bipolar Transistor module subjected to power cycling test using specified boundary condition technology","authors":"S. Chiang, T. Hung, Hsien-Chih Ou, K. Chiang","doi":"10.1109/ESIME.2011.5765766","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765766","url":null,"abstract":"The Insulated Gate Bipolar Transistor (IGBT) module subjected to a power cycle test will induce a heat concentration zone, rapid change of temperature profile and non-uniform temperature distribution on the IGBT chip. The variation of junction temperature can affect the lifetime of the IGBT module. However, the test module contains several components with different scales and material characteristics. As such, it is difficult to analyze the thermal dissipation and temperature distribution of the IGBT chip under power cycle test conditions using conventional finite element modeling technique. A local/global methodology is proposed in this study, in conduction analysis, it only require to construct a local finite element model in conjunction with a set of specified boundary conditions (SBC) where the temperatures are obtained from the computational fluid dynamics (CFD) results, this hybrid modeling technology can make the analysis process easier and more convenient.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126763984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765781
M. Guyenot, E. Peter, P. Zerrer, F. Kraemer, S. Wiese
Photovoltaic modules as well as automotive electronics are both designed to perform more than 20 years in the field. They show many similarities, for example the material combinations (Silicon, copper, lead free interconnection), the field loads, qualification tests, etc.
{"title":"Enhancing the lifetime prediction methodology for photovoltaic modules based on electronic packaging experience","authors":"M. Guyenot, E. Peter, P. Zerrer, F. Kraemer, S. Wiese","doi":"10.1109/ESIME.2011.5765781","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765781","url":null,"abstract":"Photovoltaic modules as well as automotive electronics are both designed to perform more than 20 years in the field. They show many similarities, for example the material combinations (Silicon, copper, lead free interconnection), the field loads, qualification tests, etc.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129827849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765851
J. Zaal, F. Santagata, W. V. van Driel, G.Q. Zhang, J. Creemer, P. Sarro
An increasing number of semiconductor companies have research programs related to MEMS products. This can be explained by the wide variety of application areas for MEMS, some mechanical MEMS examples are: filters [1], oscillators [2,3], pressure sensors [4], particle detection [5], thermometers [6] and gyroscopes [7].
{"title":"Co-design of Wafer Level Thin Film Package assembly","authors":"J. Zaal, F. Santagata, W. V. van Driel, G.Q. Zhang, J. Creemer, P. Sarro","doi":"10.1109/ESIME.2011.5765851","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765851","url":null,"abstract":"An increasing number of semiconductor companies have research programs related to MEMS products. This can be explained by the wide variety of application areas for MEMS, some mechanical MEMS examples are: filters [1], oscillators [2,3], pressure sensors [4], particle detection [5], thermometers [6] and gyroscopes [7].","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123449235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765784
B. Yang, W. Belkhir, R. Dhara, M. Lenczner, A. Giorgetti
We are currently developing software dedicated to multiscale and multiphysics modeling of arrays of micro and nanosystems. Unlike traditional software that is based on models built once and for all, here this is the software that constructs models. It is based on the mathematical Two-Scale Transform, a technique for asymptotic methods, together with formal specification and verification techniques in computer science, combining formal transformations and term rewriting and type theory. We aim at taking into account a wide range of geometries combining thin structures, periodic structures with the possibility of multiple nested scales and any combination of these features. In this paper we present the principle of our methods and our first results.
{"title":"Computer-aided multiscale model derivation for MEMS arrays","authors":"B. Yang, W. Belkhir, R. Dhara, M. Lenczner, A. Giorgetti","doi":"10.1109/ESIME.2011.5765784","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765784","url":null,"abstract":"We are currently developing software dedicated to multiscale and multiphysics modeling of arrays of micro and nanosystems. Unlike traditional software that is based on models built once and for all, here this is the software that constructs models. It is based on the mathematical Two-Scale Transform, a technique for asymptotic methods, together with formal specification and verification techniques in computer science, combining formal transformations and term rewriting and type theory. We aim at taking into account a wide range of geometries combining thin structures, periodic structures with the possibility of multiple nested scales and any combination of these features. In this paper we present the principle of our methods and our first results.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124132934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765795
A. Hneine, J. Massol, P. Tounsi, P. Austin
This paper will present one of the first implementations in VHDL-AMS of a compact truly distributed modeling approach applied to the Power PIN diode. This approach is based on the unidimensional solution of the ambipolar diffusion equation describing the charges behavior in the low doped zone within the device. The method allows to transform this equation in space and time into a finite set of differential equations in time only. The adaptation of the compact model to VHDL-AMS language is demonstrated by the implentation into Questa ADMS simulator. To validate the compact model, simulation results will be compared with experimental results. The consistency of the results obtained from the simulation of the diode in a simple chopper circuit shows the efficiency and robustness of the model.
{"title":"Distributed modeling approach applied to the power PIN diode using VHDL-AMS","authors":"A. Hneine, J. Massol, P. Tounsi, P. Austin","doi":"10.1109/ESIME.2011.5765795","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765795","url":null,"abstract":"This paper will present one of the first implementations in VHDL-AMS of a compact truly distributed modeling approach applied to the Power PIN diode. This approach is based on the unidimensional solution of the ambipolar diffusion equation describing the charges behavior in the low doped zone within the device. The method allows to transform this equation in space and time into a finite set of differential equations in time only. The adaptation of the compact model to VHDL-AMS language is demonstrated by the implentation into Questa ADMS simulator. To validate the compact model, simulation results will be compared with experimental results. The consistency of the results obtained from the simulation of the diode in a simple chopper circuit shows the efficiency and robustness of the model.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127637715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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