Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765861
W. Kanert
Reliability requirements for semiconductor devices have increased tremendously in the past years. However, product qualification is still dominated by standard stress test procedures. Despite improved approaches that have entered the discussion recently, testing alone will not suffice to prove very low failure rates. Understanding of the device behaviour together with physical modelling is indispensable. Simulation plays a key role in this undertaking.
{"title":"Reliability of semiconductor devices - The need for simulation","authors":"W. Kanert","doi":"10.1109/ESIME.2011.5765861","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765861","url":null,"abstract":"Reliability requirements for semiconductor devices have increased tremendously in the past years. However, product qualification is still dominated by standard stress test procedures. Despite improved approaches that have entered the discussion recently, testing alone will not suffice to prove very low failure rates. Understanding of the device behaviour together with physical modelling is indispensable. Simulation plays a key role in this undertaking.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127793722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765831
M. Pander, S. Dietrich, S. Schulze, U. Eitner, M. Ebert
This paper is proposed to enhance the mechanical simulation model for crystalline solar modules by implementing the viscoelastic behaviour of the encapsulation material ethylene-vinyl acetate (EVA). The material is characterized by thermo-mechanical analysis (TMA) experiments. Utilizing time-temperature superposition techniques a master-curve is constructed and the coefficients for the Williams-Landel-Ferry (WLF)-function are determined. This experimental data is transfered into a numerical representation and validated with creep bending tests of glass-polymer-glass-laminates. In the final step the viscoelastic model is used for calculating the cell displacement during the lamination process, followed by thermal cycling. The results for thermal cycling are compared with an optical cell-displacement measurement within a photovoltaic (PV) module [1].
{"title":"Thermo-mechanical assessment of solar cell displacement with respect to the viscoelastic behaviour of the encapsulant","authors":"M. Pander, S. Dietrich, S. Schulze, U. Eitner, M. Ebert","doi":"10.1109/ESIME.2011.5765831","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765831","url":null,"abstract":"This paper is proposed to enhance the mechanical simulation model for crystalline solar modules by implementing the viscoelastic behaviour of the encapsulation material ethylene-vinyl acetate (EVA). The material is characterized by thermo-mechanical analysis (TMA) experiments. Utilizing time-temperature superposition techniques a master-curve is constructed and the coefficients for the Williams-Landel-Ferry (WLF)-function are determined. This experimental data is transfered into a numerical representation and validated with creep bending tests of glass-polymer-glass-laminates. In the final step the viscoelastic model is used for calculating the cell displacement during the lamination process, followed by thermal cycling. The results for thermal cycling are compared with an optical cell-displacement measurement within a photovoltaic (PV) module [1].","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131930456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765809
G. de Graaf, Huaiwen Wu, R. Wolffenbuttel
In this work an analytical model for static and dynamic thermal analysis of heated thin bridges, membranes or cantilevers is presented. The analysis includes the thermal conductivity of the surrounding gas, which cannot be neglected in most MEMS devices. The model is based on Laplace transformation of the heat equations and on the Thermal Quadrupole Method. A one-dimensional approximation using these methods results in practical sets of equations that can be roughly evaluated by hand for feasibility studies of a design. Further evaluation can be done by some basic matrix operations, e.g. analytically by Mathematica or numerically using MATLAB. Plots of these functions can provide the designer with insight on the thermal behavior of the structure, without the use of finite element calculations.
{"title":"A model for static and dynamic thermal analysis of thin film MEMS structures including the thermal conductivity of the surrounding gas","authors":"G. de Graaf, Huaiwen Wu, R. Wolffenbuttel","doi":"10.1109/ESIME.2011.5765809","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765809","url":null,"abstract":"In this work an analytical model for static and dynamic thermal analysis of heated thin bridges, membranes or cantilevers is presented. The analysis includes the thermal conductivity of the surrounding gas, which cannot be neglected in most MEMS devices. The model is based on Laplace transformation of the heat equations and on the Thermal Quadrupole Method. A one-dimensional approximation using these methods results in practical sets of equations that can be roughly evaluated by hand for feasibility studies of a design. Further evaluation can be done by some basic matrix operations, e.g. analytically by Mathematica or numerically using MATLAB. Plots of these functions can provide the designer with insight on the thermal behavior of the structure, without the use of finite element calculations.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134163230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765761
S. Chaparala, V. Bhagavatula, J. Himmelreich
Micro-projector based displays are proposed for information display for a number of consumer devices. These displays would provide larger images than existing fixed Liquid crystal displays. The two major components of micro-projector technology are the Light source and the Imaging technology. Three primary colors, red, blue and green are required to create full color images. The light sources in the projection technology would be semiconductor devices that emit these colors. These devices could be either light emitting diodes (LEDs) or lasers. To enable the laser based projection technology, red and blue lasers are commerically available. Native semiconductor green lasers are still in development. As an alternative, synthetic green light can be produced by passing 1060nm infra-red light emitted from a GaAs based semiconductor laser diode (LD) through second harmonic generation (SHG) crystal, thereby emitting the green light at 530 nm. The current research work proposes bringing the SHG structure in close proximity to the LD, thereby eliminating the use of any optics in between. The proximity coupling approach promises to reduce the number of package components and process cost significantly. This paper presents the mechanical package design, coefficient of thermal expansion based displacement estimates, thermal analysis wherein the thermal impedance is predicted and measured, thermo-mechanical analysis wherein the thermo-mechanical stresses and strains are predicted. Shock modeling has been done to understand the displacements of the waveguides during the shock event. Optical modeling is performed to estimate the coupling efficiency change as a function of lateral and longitudinal offset between the LD and SHG waveguides. Finally, an assembled package that generated green light using this design is presented.
{"title":"Design of athermalized proximity coupled (APC) synthetic green laser opto-electronic package for microprojector displays: Numerical modeling and experiments","authors":"S. Chaparala, V. Bhagavatula, J. Himmelreich","doi":"10.1109/ESIME.2011.5765761","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765761","url":null,"abstract":"Micro-projector based displays are proposed for information display for a number of consumer devices. These displays would provide larger images than existing fixed Liquid crystal displays. The two major components of micro-projector technology are the Light source and the Imaging technology. Three primary colors, red, blue and green are required to create full color images. The light sources in the projection technology would be semiconductor devices that emit these colors. These devices could be either light emitting diodes (LEDs) or lasers. To enable the laser based projection technology, red and blue lasers are commerically available. Native semiconductor green lasers are still in development. As an alternative, synthetic green light can be produced by passing 1060nm infra-red light emitted from a GaAs based semiconductor laser diode (LD) through second harmonic generation (SHG) crystal, thereby emitting the green light at 530 nm. The current research work proposes bringing the SHG structure in close proximity to the LD, thereby eliminating the use of any optics in between. The proximity coupling approach promises to reduce the number of package components and process cost significantly. This paper presents the mechanical package design, coefficient of thermal expansion based displacement estimates, thermal analysis wherein the thermal impedance is predicted and measured, thermo-mechanical analysis wherein the thermo-mechanical stresses and strains are predicted. Shock modeling has been done to understand the displacements of the waveguides during the shock event. Optical modeling is performed to estimate the coupling efficiency change as a function of lateral and longitudinal offset between the LD and SHG waveguides. Finally, an assembled package that generated green light using this design is presented.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130332747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765759
N. Iwamoto
Developing the stress response using the molecular and mesoscale levels is fairly reliable during the initial strain. For instance, modulus is a property that can be established using these techniques and the continuity of scale suggests that both may be used to establish modulus for parameterizing a macroscale model when measured properties are unavailable. However, the latter part of the stress/strain response that helps to establish ties to crack propagation still needs attention. One problem that was previously found was questionable lack of void formation in crosslinked systems due to superficially clean adhesive separation in the simulations. One way to overcome this lack of voiding was to determine how to develop bond breakage criterion that would allow surfaces to develop. This paper discusses development and application of bond breakage, and the impact on the simulated stress/strain curves using mesoscale models.
{"title":"Developing the mesoscale stress-strain curve to failure","authors":"N. Iwamoto","doi":"10.1109/ESIME.2011.5765759","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765759","url":null,"abstract":"Developing the stress response using the molecular and mesoscale levels is fairly reliable during the initial strain. For instance, modulus is a property that can be established using these techniques and the continuity of scale suggests that both may be used to establish modulus for parameterizing a macroscale model when measured properties are unavailable. However, the latter part of the stress/strain response that helps to establish ties to crack propagation still needs attention. One problem that was previously found was questionable lack of void formation in crosslinked systems due to superficially clean adhesive separation in the simulations. One way to overcome this lack of voiding was to determine how to develop bond breakage criterion that would allow surfaces to develop. This paper discusses development and application of bond breakage, and the impact on the simulated stress/strain curves using mesoscale models.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123610422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765850
S. Koh, W. V. Driel, Guoqi Zhang
Due to their long lifetime and high efficacy, solid state lighting (SSL) has the potential to revolutionize the illumination industry. The long lifetime claimed by the manufacturers is often based solely on the estimated depreciation of lumen for a single LED operating at 25°C. However, self heating and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of light emitting diode. Furthermore, each SSL system includes different components such as the optical part, electrical driver and interconnections. The failure/degradation of any components wills severely affects the performance and reliability of whole system and hence the weakest component will become the bottleneck for the reliability and lifetime of the module. Literature reviews of the factors influencing the life of LED lamps identified the degradation of the epoxy lens and plastic package due to the junction temperature and voltages as one of the common failure mode. In this research, a methodology to predict the degradation of the epoxy lens has been proposed. In order to correlate the mean time to failure as a function of the junction temperature and the inputted voltage, the simplified Eyring models had been proposed in this research. Since the life of a SSL system is subjected to varying loading condition, another objectives of this research is to present a methodology to predict the life of a SSL under changing condition.
{"title":"Degradation of epoxy lens materials in LED systems","authors":"S. Koh, W. V. Driel, Guoqi Zhang","doi":"10.1109/ESIME.2011.5765850","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765850","url":null,"abstract":"Due to their long lifetime and high efficacy, solid state lighting (SSL) has the potential to revolutionize the illumination industry. The long lifetime claimed by the manufacturers is often based solely on the estimated depreciation of lumen for a single LED operating at 25°C. However, self heating and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of light emitting diode. Furthermore, each SSL system includes different components such as the optical part, electrical driver and interconnections. The failure/degradation of any components wills severely affects the performance and reliability of whole system and hence the weakest component will become the bottleneck for the reliability and lifetime of the module. Literature reviews of the factors influencing the life of LED lamps identified the degradation of the epoxy lens and plastic package due to the junction temperature and voltages as one of the common failure mode. In this research, a methodology to predict the degradation of the epoxy lens has been proposed. In order to correlate the mean time to failure as a function of the junction temperature and the inputted voltage, the simplified Eyring models had been proposed in this research. Since the life of a SSL system is subjected to varying loading condition, another objectives of this research is to present a methodology to predict the life of a SSL under changing condition.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128504934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765813
D. Hofinger, M. Jungwirth, H. Pflugelmeier, A. Eder
Increasing power density in power electronics applications requires optimum design of the cooling system. Finding the optimum design by manufacturing prototypes is often difficult, time consuming and expensive due to the large number of variable parameters. The choice of the optimal heat sink-fan combination can be assisted by a number of different numerical simulation methods. In a case study of a typical heat sink-fan combination in a welding machine, a comparison is presented between a full CFD-simulation and an optimization routine, embedded in a Matlab graphical user interface. After a short review of the physical background and the underlying mathematical algorithm, the advantages and disadvantages/drawbacks are detailed.
{"title":"Heat sink design for optimal thermal management","authors":"D. Hofinger, M. Jungwirth, H. Pflugelmeier, A. Eder","doi":"10.1109/ESIME.2011.5765813","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765813","url":null,"abstract":"Increasing power density in power electronics applications requires optimum design of the cooling system. Finding the optimum design by manufacturing prototypes is often difficult, time consuming and expensive due to the large number of variable parameters. The choice of the optimal heat sink-fan combination can be assisted by a number of different numerical simulation methods. In a case study of a typical heat sink-fan combination in a welding machine, a comparison is presented between a full CFD-simulation and an optimization routine, embedded in a Matlab graphical user interface. After a short review of the physical background and the underlying mathematical algorithm, the advantages and disadvantages/drawbacks are detailed.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124581171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765792
E. Weltevreden, M. Erinc, S. Tesarski, A. Wymyslowski, A. Mavinkurve, A. Giele
Delamination of mating interfaces can cause serious reliability problems in different application areas. The causes of delamination are multiple. In the case of leadframe-based chip packages, a critical interface is that between the leadframe and the moulding compound. Delamination can magnify stress levels at the interface and can lead to fatigue of interconnects.
{"title":"A multi-scale approach to the thermo-mechanical behaviour of silica-filled epoxies for electronic packaging","authors":"E. Weltevreden, M. Erinc, S. Tesarski, A. Wymyslowski, A. Mavinkurve, A. Giele","doi":"10.1109/ESIME.2011.5765792","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765792","url":null,"abstract":"Delamination of mating interfaces can cause serious reliability problems in different application areas. The causes of delamination are multiple. In the case of leadframe-based chip packages, a critical interface is that between the leadframe and the moulding compound. Delamination can magnify stress levels at the interface and can lead to fatigue of interconnects.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121211292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765778
Cao Yi-jiang, Yufeng Zhang, Xu Biao, Y. Jinghua, Xiaowei Liu
In order to overcome the disadvantages of low mass transport efficiency of oxygen to the cathode and poor performance of passive micro direct methanol fuel cells (DMFC), the structures of the cathode current collector for the passive micro DMFC have been studied. The passive micro DMFC employing the cathode current collector with the planar perforated-plate structure has been fabricated. The effect of the anode methanol concentration and the opening area ratio of the cathode on the performance has been investigated. Owing to the influence of contact resistance and oxygen mass transport, the passive micro DMFC exhibits the optimal performance when opening ratio is 50%. Furthermore, the new parallel channels structure of the cathode current collector has been proposed, and the corresponding passive micro DMFC has also been fabricated by utilizing micro precision processing technology. The test results indicate that the mass transfer of oxygen and performance stability have been improved based on the cathode current collector with the parallel channels structure compared to the conventional planar structure. Moreover, a maximum output power density of 9.7 mW/cm2 is achieved. The above studies might be helpful for the developing and application of portable micro power systems.
{"title":"Study on passive micro direct methanol fuel cell","authors":"Cao Yi-jiang, Yufeng Zhang, Xu Biao, Y. Jinghua, Xiaowei Liu","doi":"10.1109/ESIME.2011.5765778","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765778","url":null,"abstract":"In order to overcome the disadvantages of low mass transport efficiency of oxygen to the cathode and poor performance of passive micro direct methanol fuel cells (DMFC), the structures of the cathode current collector for the passive micro DMFC have been studied. The passive micro DMFC employing the cathode current collector with the planar perforated-plate structure has been fabricated. The effect of the anode methanol concentration and the opening area ratio of the cathode on the performance has been investigated. Owing to the influence of contact resistance and oxygen mass transport, the passive micro DMFC exhibits the optimal performance when opening ratio is 50%. Furthermore, the new parallel channels structure of the cathode current collector has been proposed, and the corresponding passive micro DMFC has also been fabricated by utilizing micro precision processing technology. The test results indicate that the mass transfer of oxygen and performance stability have been improved based on the cathode current collector with the parallel channels structure compared to the conventional planar structure. Moreover, a maximum output power density of 9.7 mW/cm2 is achieved. The above studies might be helpful for the developing and application of portable micro power systems.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127185696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765789
C. Yuan, E. Weltevreden, Pieter van dan Akker, R. Kregting, J. de Vreugd, G. Zhang
Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes.
{"title":"FE modeling of Cu wire bond process and reliability","authors":"C. Yuan, E. Weltevreden, Pieter van dan Akker, R. Kregting, J. de Vreugd, G. Zhang","doi":"10.1109/ESIME.2011.5765789","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765789","url":null,"abstract":"Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"219 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130670433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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