This paper reports on the power scalability of 1.55-μm-wavelength photonic crystal surface emitting lasers (PCSELs) utilizing the design flexibility of the double-lattice photonic crystal. By controlling in-plane optical coupling, we have achieved single-mode continuous-wave lasing with various device sizes ranging from 100 μm to 300 μm in diameter. The output power exceeds 500 mW for a device size of 300 μm, and wall-plug efficiencies of all fabricated devices exceed 18%. Highly stable single-mode lasing with a side-mode suppression ratio over 60 dB is obtained even at the maximum output powers. Narrow circular beams are obtained, and the divergence angles decrease with increasing device size, ranging from 0.55 degrees to 0.23 degrees in FWHM for device sizes from 100 μm and 300 μm, respectively.
{"title":"Power Scalability of 1.55-μm-Wavelength InP-Based Double-Lattice Photonic-Crystal Surface-Emitting Lasers With Stable Continuous-Wave Single-Mode Lasing","authors":"Yuhki Itoh;Takeshi Aoki;Kosuke Fujii;Hiroyuki Yoshinaga;Naoki Fujiwara;Makoto Ogasawara;Yusuke Sawada;Rei Tanaka;Kenichi Machinaga;Hideki Yagi;Masaki Yanagisawa;Masahiro Yoshida;Takuya Inoue;Menaka De Zoysa;Kenji Ishizaki;Susumu Noda","doi":"10.1109/JSTQE.2024.3454202","DOIUrl":"10.1109/JSTQE.2024.3454202","url":null,"abstract":"This paper reports on the power scalability of 1.55-μm-wavelength photonic crystal surface emitting lasers (PCSELs) utilizing the design flexibility of the double-lattice photonic crystal. By controlling in-plane optical coupling, we have achieved single-mode continuous-wave lasing with various device sizes ranging from 100 μm to 300 μm in diameter. The output power exceeds 500 mW for a device size of 300 μm, and wall-plug efficiencies of all fabricated devices exceed 18%. Highly stable single-mode lasing with a side-mode suppression ratio over 60 dB is obtained even at the maximum output powers. Narrow circular beams are obtained, and the divergence angles decrease with increasing device size, ranging from 0.55 degrees to 0.23 degrees in FWHM for device sizes from 100 μm and 300 μm, respectively.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For LiDAR applications, compact, robust, and mass-producible light sources generating high-peak power nanosecond-long pulses are essential. This paper presents an investigation of power scaling in semiconductor lasers via the number of epitaxially stacked active regions in a single vertical waveguide supporting a higher order mode, chip length, output aperture width, and lateral waveguide design. All devices are wavelength-stabilized using surface gratings integrated either as a passive section at the rear facet of the diode laser as a distributed-Bragg-reflector (DBR) or along the full length of the chip in a distributed feedback (DFB) design. A 4 mm long broad-area (BA) DBR laser with a stripe width of 200 μm and five active regions delivered approximately 171 W at 80 A, a factor of 6.6 more peak pulse power than the standard 6 mm long single active region DBR laser with 50 μm stripe width. A corresponding 3 mm long 3-active region DFB-BA laser achieved more than 125 W at 129 A. These BA lasers have a lateral beam propagation ratio M $^{2}approx$ 30. In contrast, weakly tapered ridge waveguide (TRW) lasers were found to generate more than 20 W with an M $^{2}$ of about 3 and an excellent lateral brightness of 24 W $cdot$ mm $^{-1}$ mrad $^{-1}$ .
{"title":"Wavelength-Stabilized Multi-Active Region DBR and DFB Broad-Area and Ridge-Waveguide Lasers for High Peak-Power Pulsed Operation","authors":"Heike Christopher;Nor Ammouri;Maximilian Beier;Jörg Fricke;Arnim Ginolas;Jan-Philipp Koester;Armin Liero;Andre Maaßdorf;Sonja Nozinic;Hans Wenzel;Andrea Knigge","doi":"10.1109/JSTQE.2024.3454353","DOIUrl":"10.1109/JSTQE.2024.3454353","url":null,"abstract":"For LiDAR applications, compact, robust, and mass-producible light sources generating high-peak power nanosecond-long pulses are essential. This paper presents an investigation of power scaling in semiconductor lasers via the number of epitaxially stacked active regions in a single vertical waveguide supporting a higher order mode, chip length, output aperture width, and lateral waveguide design. All devices are wavelength-stabilized using surface gratings integrated either as a passive section at the rear facet of the diode laser as a distributed-Bragg-reflector (DBR) or along the full length of the chip in a distributed feedback (DFB) design. A 4 mm long broad-area (BA) DBR laser with a stripe width of 200 μm and five active regions delivered approximately 171 W at 80 A, a factor of 6.6 more peak pulse power than the standard 6 mm long single active region DBR laser with 50 μm stripe width. A corresponding 3 mm long 3-active region DFB-BA laser achieved more than 125 W at 129 A. These BA lasers have a lateral beam propagation ratio M\u0000<inline-formula><tex-math>$^{2}approx$</tex-math></inline-formula>\u0000 30. In contrast, weakly tapered ridge waveguide (TRW) lasers were found to generate more than 20 W with an M\u0000<inline-formula><tex-math>$^{2}$</tex-math></inline-formula>\u0000 of about 3 and an excellent lateral brightness of 24 W\u0000<inline-formula><tex-math>$cdot$</tex-math></inline-formula>\u0000 mm\u0000<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula>\u0000mrad\u0000<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula>\u0000.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-03DOI: 10.1109/JSTQE.2024.3453252
Soumava Ghosh;Guo-En Chang
GeSn lasers have emerged as a promising solution for on-chip lasers in silicon photonics. This study systematically investigated the threshold characteristics of electrically-driven Ge 1–x Sn x lasers on Si operating at room temperature, focusing on Sn content and defect density. Theoretical models were developed to calculate band structure, carrier occupation, free-carrier absorption (FCA), and threshold current density. The results indicate that at low Sn contents, where the GeSn active layer is an indirect bandgap material, increasing Sn content decreases the energy difference (Δ E ΓL ) between indirect and direct conduction band edges, thereby reducing transparent carrier density. Conversely, when the GeSn active layer is transformed into a direct bandgap material with a sufficiently high Sn content, the transparent hole density is minimally affected by further Sn increases. Additionally, increasing defect densities increases FCA, suppressing net gain, highlighting the need for high material quality in Ge 1–x Sn x with defect densities below 1 × 107cm −2 for efficient lasing. Moreover, while increasing Sn content initially reduces threshold current density, further increments lead to higher Auger recombination current at longer lasing wavelengths, limiting continuous decrease. Therefore, an optimal Sn content of 13% achieves the lowest threshold current density. This study provides valuable guidelines for developing efficient electrically-driven Ge 1–x Sn x lasers for practical room-temperature applications.
{"title":"Theoretical Analysis of Threshold Characteristics in Electrically-Driven GeSn Lasers","authors":"Soumava Ghosh;Guo-En Chang","doi":"10.1109/JSTQE.2024.3453252","DOIUrl":"10.1109/JSTQE.2024.3453252","url":null,"abstract":"GeSn lasers have emerged as a promising solution for on-chip lasers in silicon photonics. This study systematically investigated the threshold characteristics of electrically-driven Ge\u0000<sub>1–<i>x</i></sub>\u0000Sn\u0000<sub><i>x</i></sub>\u0000 lasers on Si operating at room temperature, focusing on Sn content and defect density. Theoretical models were developed to calculate band structure, carrier occupation, free-carrier absorption (FCA), and threshold current density. The results indicate that at low Sn contents, where the GeSn active layer is an indirect bandgap material, increasing Sn content decreases the energy difference (Δ\u0000<italic>E</i>\u0000<sub>ΓL</sub>\u0000) between indirect and direct conduction band edges, thereby reducing transparent carrier density. Conversely, when the GeSn active layer is transformed into a direct bandgap material with a sufficiently high Sn content, the transparent hole density is minimally affected by further Sn increases. Additionally, increasing defect densities increases FCA, suppressing net gain, highlighting the need for high material quality in Ge\u0000<sub>1–<i>x</i></sub>\u0000Sn\u0000<sub><i>x</i></sub>\u0000 with defect densities below \u0000<bold>1</b>\u0000×\u0000<bold>10<sup>7</sup>cm</b>\u0000<sup>−</sup>\u0000<bold><sup>2</sup></b>\u0000 for efficient lasing. Moreover, while increasing Sn content initially reduces threshold current density, further increments lead to higher Auger recombination current at longer lasing wavelengths, limiting continuous decrease. Therefore, an optimal Sn content of 13% achieves the lowest threshold current density. This study provides valuable guidelines for developing efficient electrically-driven Ge\u0000<sub>1–<i>x</i></sub>\u0000Sn\u0000<sub><i>x</i></sub>\u0000 lasers for practical room-temperature applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-11"},"PeriodicalIF":4.3,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-03DOI: 10.1109/JSTQE.2024.3453489
Andrea Ott;Daniela Stange;Johanna Kolb;Alexander van der Lee;Tobias Pusch;Negar Gheshlaghi;Benjamin Gronau;Stephan Gronenborn;Roman Körner
This paper presents an in-depth evaluation of 1130 nm VCSEL devices, including single emitters and arrays produced using industrial III-V semiconductor fabrication processes. The study focuses on electro-optical performance and device longevity, revealing wall plug efficiencies of approximately 32% at 25 °C for single junction devices. A detailed comparison between polarization-stabilized and non-stabilized devices highlights that polarization-stabilized VCSELs maintain a consistent polarization extinction ratio of around −15 dB, regardless of their modal behavior. Additionally, we introduce a model predicting the scaling of arrays to achieve watt-level power outputs, optimizing optical aperture, pitch, and mesa count for specific applications. This analysis underlines the potential of these devices for advanced sensing and data transmission applications.
{"title":"Polarization-Stabilized 1130 nm VCSEL Arrays: Performance and Scalability","authors":"Andrea Ott;Daniela Stange;Johanna Kolb;Alexander van der Lee;Tobias Pusch;Negar Gheshlaghi;Benjamin Gronau;Stephan Gronenborn;Roman Körner","doi":"10.1109/JSTQE.2024.3453489","DOIUrl":"10.1109/JSTQE.2024.3453489","url":null,"abstract":"This paper presents an in-depth evaluation of 1130 nm VCSEL devices, including single emitters and arrays produced using industrial III-V semiconductor fabrication processes. The study focuses on electro-optical performance and device longevity, revealing wall plug efficiencies of approximately 32% at 25 °C for single junction devices. A detailed comparison between polarization-stabilized and non-stabilized devices highlights that polarization-stabilized VCSELs maintain a consistent polarization extinction ratio of around −15 dB, regardless of their modal behavior. Additionally, we introduce a model predicting the scaling of arrays to achieve watt-level power outputs, optimizing optical aperture, pitch, and mesa count for specific applications. This analysis underlines the potential of these devices for advanced sensing and data transmission applications.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1109/JSTQE.2024.3452126
Takuya Inoue;Kentaro Maeda;Masahiro Yoshida;John Gelleta;Shumpei Katsuno;Kenji Ishizaki;Menaka De Zoysa;Susumu Noda
Photonic-crystal surface-emitting lasers (PCSELs), which are based on a two-dimensional (2D) optical resonance at a band edge of a photonic band structure, feature ultra-large-area single-mode lasing oscillation with scalable output power. In this paper, we theoretically investigate the influence of the band-edge frequency non-uniformity in ultra-large-area PCSELs, which can be caused by carrier-induced or temperature-induced refractive-index change during operation. First, we perform a perturbation analysis to derive an analytical condition to maintain single-mode lasing in the presence of the band-edge frequency non-uniformity, and reveal that it is important to increase not only the threshold gain difference but also the frequency difference between the fundamental mode and higher-order modes. Next, we perform numerical simulations on lasing characteristics of 3-mm-diameter PCSELs with non-uniform band-edge frequency distributions, and investigate the robust design against gradually changed frequency distributions or random frequency fluctuations.
{"title":"Influence of Band-Edge Frequency Non-Uniformity in Ultra-Large-Area Photonic-Crystal Surface-Emitting Lasers","authors":"Takuya Inoue;Kentaro Maeda;Masahiro Yoshida;John Gelleta;Shumpei Katsuno;Kenji Ishizaki;Menaka De Zoysa;Susumu Noda","doi":"10.1109/JSTQE.2024.3452126","DOIUrl":"10.1109/JSTQE.2024.3452126","url":null,"abstract":"Photonic-crystal surface-emitting lasers (PCSELs), which are based on a two-dimensional (2D) optical resonance at a band edge of a photonic band structure, feature ultra-large-area single-mode lasing oscillation with scalable output power. In this paper, we theoretically investigate the influence of the band-edge frequency non-uniformity in ultra-large-area PCSELs, which can be caused by carrier-induced or temperature-induced refractive-index change during operation. First, we perform a perturbation analysis to derive an analytical condition to maintain single-mode lasing in the presence of the band-edge frequency non-uniformity, and reveal that it is important to increase not only the threshold gain difference but also the frequency difference between the fundamental mode and higher-order modes. Next, we perform numerical simulations on lasing characteristics of 3-mm-diameter PCSELs with non-uniform band-edge frequency distributions, and investigate the robust design against gradually changed frequency distributions or random frequency fluctuations.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-28DOI: 10.1109/jstqe.2024.3451113
Ian Bauwens, Peter Bienstman, Guy Verschaffelt, Guy Van der Sande
{"title":"Use of a Simple Passive Hardware Mask to Replace the Digital Masking Procedure in Photonic Delay-Based Reservoir Computing","authors":"Ian Bauwens, Peter Bienstman, Guy Verschaffelt, Guy Van der Sande","doi":"10.1109/jstqe.2024.3451113","DOIUrl":"https://doi.org/10.1109/jstqe.2024.3451113","url":null,"abstract":"","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"5 1","pages":""},"PeriodicalIF":4.9,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Microcombs are advancing optical frequency comb technology towards a chip-integrable form. Here, we characterize a microwave signal source based upon the two-point optical frequency division (2P-OFD) technique. The system uses a frequency microcomb to transfer relative frequency stability of two low-noise optical oscillators to the microcomb repetition rate tone. The two optical oscillators are based on semiconductor lasers jointly stabilized to an ultra-stable Fabry–Pérot cavity. The coherence of the comb spectrum is confirmed through multiple stability comparisons between its repetition rate and comb line spectrum. The results underscore the excellent performance of microcombs as coherent links between optical and microwave frequencies, and how they enable simplified, miniaturized architectures for optical frequency division.
{"title":"Coherent Optical-to-Microwave Link Using an Integrated Microcomb","authors":"Qing-Xin Ji;Wei Zhang;Lue Wu;Warren Jin;Joel Guo;Avi Feshali;Mario Paniccia;John Bowers;Andrey Matsko;Kerry Vahala","doi":"10.1109/JSTQE.2024.3451301","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3451301","url":null,"abstract":"Microcombs are advancing optical frequency comb technology towards a chip-integrable form. Here, we characterize a microwave signal source based upon the two-point optical frequency division (2P-OFD) technique. The system uses a frequency microcomb to transfer relative frequency stability of two low-noise optical oscillators to the microcomb repetition rate tone. The two optical oscillators are based on semiconductor lasers jointly stabilized to an ultra-stable Fabry–Pérot cavity. The coherence of the comb spectrum is confirmed through multiple stability comparisons between its repetition rate and comb line spectrum. The results underscore the excellent performance of microcombs as coherent links between optical and microwave frequencies, and how they enable simplified, miniaturized architectures for optical frequency division.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"30 5: Microresonator Frequency Comb Technologies","pages":"1-7"},"PeriodicalIF":4.3,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10654539","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-27DOI: 10.1109/JSTQE.2024.3450812
Natalia V. Kryzhanovskaya;Eduard I. Moiseev;Alexey M. Nadtochiy;Ivan A. Melnichenko;Nikita A. Fominykh;Konstantin A. Ivanov;Sergey D. Komarov;Ivan S. Makhov;Evgenii V. Lutsenko;Aliaksei G. Vainilovich;Aliaksei V. Nahorny;Alexey E. Zhukov
Technological progress makes it possible to significantly reduce the size of semiconductor laser emitters to microscales and sizes commensurate with the emission wavelength. Extreme laser miniaturization can be achieved using disk or ring resonators supporting high-Q whispering gallery modes (WGM). WGM lasers are interesting not only due to small sizes (small mode volume) but also for their long times of light-matter interaction, unique capabilities of sensing and studying of quantum chaos and so on. On the other hand, small losses for the output of emission in high-Q resonators can negate the practical benefits of the laser or even completely hide the peculiarities of the light physics inside the cavity. In this review, we attempted to summarize the published data on the achieved optical output power in different III-V injection microlasers and analyzed the key characteristics that limit the maximum output power, especially influence of the active region self-heating at cw operation and impeded light extraction out of WGM cavities. We compared various III-V materials and fabrication methods developed for improving emission output. We also observe very low relative intensity noise in microdisk lasers and harmonics of the resonance frequency in the relative intensity noise spectrum.
{"title":"Output Power of III-V Injection Microdisk and Microring Lasers","authors":"Natalia V. Kryzhanovskaya;Eduard I. Moiseev;Alexey M. Nadtochiy;Ivan A. Melnichenko;Nikita A. Fominykh;Konstantin A. Ivanov;Sergey D. Komarov;Ivan S. Makhov;Evgenii V. Lutsenko;Aliaksei G. Vainilovich;Aliaksei V. Nahorny;Alexey E. Zhukov","doi":"10.1109/JSTQE.2024.3450812","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3450812","url":null,"abstract":"Technological progress makes it possible to significantly reduce the size of semiconductor laser emitters to microscales and sizes commensurate with the emission wavelength. Extreme laser miniaturization can be achieved using disk or ring resonators supporting high-Q whispering gallery modes (WGM). WGM lasers are interesting not only due to small sizes (small mode volume) but also for their long times of light-matter interaction, unique capabilities of sensing and studying of quantum chaos and so on. On the other hand, small losses for the output of emission in high-Q resonators can negate the practical benefits of the laser or even completely hide the peculiarities of the light physics inside the cavity. In this review, we attempted to summarize the published data on the achieved optical output power in different III-V injection microlasers and analyzed the key characteristics that limit the maximum output power, especially influence of the active region self-heating at cw operation and impeded light extraction out of WGM cavities. We compared various III-V materials and fabrication methods developed for improving emission output. We also observe very low relative intensity noise in microdisk lasers and harmonics of the resonance frequency in the relative intensity noise spectrum.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 2: Pwr. and Effic. Scaling in Semiconductor Lasers","pages":"1-12"},"PeriodicalIF":4.3,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142143773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-26DOI: 10.1109/JSTQE.2024.3450302
Cédric Lemieux-Leduc;Mahmoud R. M. Atalla;Simone Assali;Sebastian Koelling;Patrick Daoust;Lu Luo;Gérard Daligou;Julien Brodeur;Stéphane Kéna-Cohen;Yves-Alain Peter;Oussama Moutanabbir
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge $_{1-x}$ Sn $_{x}$ ) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layers. This compressive strain limits the material quality and its thermal stability besides expanding the band gap, thereby increasing the Sn content needed to cover a broader range in the mid-infrared. Released Ge $_{1-x}$ Sn $_{x}$ membranes provide an effective way to mitigate these harmful effects of the epitaxial strain and control the band gap energy while enabling the hybrid integration onto different substrates. Nevertheless, the epitaxial strain is also known to affect the fabrication of membrane devices due to a significant bowing upon release from the growth substrate, especially in high Sn content structures. With this perspective, herein these limitations are discussed and addressed by introducing bow-free, strain-relaxed Ge $_{1-x}$ Sn $_{x}$ membranes in the fabrication of mid-infrared devices. These devices are transfer-printed with metal contacts to create multiple photodetectors in a single transfer step. The resulting photodetectors exhibit an extended photodetection cutoff reaching a wavelength of $3.1 ,mu$ m for a Sn content of ${x=0.11}$ compared to as-grown photoconductive devices. The latter yields a reduced cutoff of $2.8 ,mu$ m due to the inherent compressive strain. Additionally, a significant reduction in the dark current of two orders of magnitude is observed, which could be related to the formation of a Schottky barrier or to a change in the contact resistivity during the processing steps of the membranes. Furthermore, the impact of chemical treatment and annealing on the device performance was also investigated showing a further reduction in the dark current. The demonstrated transfer printing, along with the use of an adhesive layer, allows the transfer of multiple GeSn membranes onto virtually any substrate. This approach paves the way for scalable fabrication of hybrid optoelectronic devices leveraging the tunable band gap of Ge $_{1-x}$ Sn $_{x}$ in the mid-infrared range.
锗锡合金（Ge$_{1-x}$Sn$_{x}$）具有窄带隙和与硅加工兼容的特点，是可扩展的集成中红外光学的多功能平台。这些半导体通常使用 Ge 作为中间层在硅晶片上生长。然而，这种异质外延协议中的巨大晶格失配会导致生长层中压应变的积累。这种压应变除了扩大带隙外，还限制了材料的质量及其热稳定性，从而增加了覆盖更宽中红外范围所需的锡含量。释放出的 Ge$_{1-x}$Sn$_{x}$ 膜为减轻外延应变的有害影响和控制带隙能提供了一种有效的方法，同时还能在不同的基底上实现混合集成。然而，众所周知，外延应变也会影响膜器件的制造，因为从生长基底释放时会产生明显的弯曲，特别是在高 Sn 含量结构中。从这个角度出发，本文通过在中红外器件的制造中引入无弓形、应变松弛的 Ge$_{1-x}$Sn$_{x}$ 膜来讨论和解决这些限制。这些器件采用金属触点转移印制，只需一个转移步骤就能制造出多个光电探测器。与原样生长的光电导器件相比，在锡含量为${x=0.11}$时，所产生的光电探测器显示出更长的光电探测截止波长，达到3.1 ,mu$m。由于固有的压缩应变，后者的截止波长降低到了 2.8 mu$m。此外，还观察到暗电流显著降低了两个数量级，这可能与肖特基势垒的形成有关，也可能与薄膜加工步骤中接触电阻率的变化有关。此外，还研究了化学处理和退火对器件性能的影响，结果显示暗电流进一步降低。所展示的转移印刷以及粘合剂层的使用，几乎可以将多个 GeSn 膜转移到任何基底上。这种方法为利用 Ge$_{1-x}$Sn$_{x}$ 在中红外范围内的可调带隙可扩展地制造混合光电器件铺平了道路。
{"title":"Transfer-Printed Multiple GeSn Membrane Mid-Infrared Photodetectors","authors":"Cédric Lemieux-Leduc;Mahmoud R. M. Atalla;Simone Assali;Sebastian Koelling;Patrick Daoust;Lu Luo;Gérard Daligou;Julien Brodeur;Stéphane Kéna-Cohen;Yves-Alain Peter;Oussama Moutanabbir","doi":"10.1109/JSTQE.2024.3450302","DOIUrl":"10.1109/JSTQE.2024.3450302","url":null,"abstract":"Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge\u0000<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>\u0000Sn\u0000<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>\u0000) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layers. This compressive strain limits the material quality and its thermal stability besides expanding the band gap, thereby increasing the Sn content needed to cover a broader range in the mid-infrared. Released Ge\u0000<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>\u0000Sn\u0000<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>\u0000 membranes provide an effective way to mitigate these harmful effects of the epitaxial strain and control the band gap energy while enabling the hybrid integration onto different substrates. Nevertheless, the epitaxial strain is also known to affect the fabrication of membrane devices due to a significant bowing upon release from the growth substrate, especially in high Sn content structures. With this perspective, herein these limitations are discussed and addressed by introducing bow-free, strain-relaxed Ge\u0000<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>\u0000Sn\u0000<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>\u0000 membranes in the fabrication of mid-infrared devices. These devices are transfer-printed with metal contacts to create multiple photodetectors in a single transfer step. The resulting photodetectors exhibit an extended photodetection cutoff reaching a wavelength of \u0000<inline-formula><tex-math>$3.1 ,mu$</tex-math></inline-formula>\u0000m for a Sn content of \u0000<inline-formula><tex-math>${x=0.11}$</tex-math></inline-formula>\u0000 compared to as-grown photoconductive devices. The latter yields a reduced cutoff of \u0000<inline-formula><tex-math>$2.8 ,mu$</tex-math></inline-formula>\u0000m due to the inherent compressive strain. Additionally, a significant reduction in the dark current of two orders of magnitude is observed, which could be related to the formation of a Schottky barrier or to a change in the contact resistivity during the processing steps of the membranes. Furthermore, the impact of chemical treatment and annealing on the device performance was also investigated showing a further reduction in the dark current. The demonstrated transfer printing, along with the use of an adhesive layer, allows the transfer of multiple GeSn membranes onto virtually any substrate. This approach paves the way for scalable fabrication of hybrid optoelectronic devices leveraging the tunable band gap of Ge\u0000<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>\u0000Sn\u0000<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>\u0000 in the mid-infrared range.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-10"},"PeriodicalIF":4.3,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-21DOI: 10.1109/JSTQE.2024.3447163
Jeremy Belhassen;Avraham Chelly
The fabrication of nanoelectronic and nanophotonic devices based on embedded quantum structures has become feasible over the last decades, and the field is continuously improving. Quantum measurements describing evolving configurations are required as part of the optical characterization and performances study of these devices. To ensure accuracy, it is necessary to determine a reliable evaluation of the expected quantum effects relevant to both stationary and time-dependent measurements. Based on a case study of a quantum well embedded in a nanoelectronic MOSFET device as the gate-recessed channel (GRC), a set of possible quantum measurements that can serve as a basis to similar applications of the rules on additional devices is presented and analyzed.
{"title":"Review of Selected Quantum Measurements Applied to Embedded Quantum Well in Nanoscale Transistor","authors":"Jeremy Belhassen;Avraham Chelly","doi":"10.1109/JSTQE.2024.3447163","DOIUrl":"https://doi.org/10.1109/JSTQE.2024.3447163","url":null,"abstract":"The fabrication of nanoelectronic and nanophotonic devices based on embedded quantum structures has become feasible over the last decades, and the field is continuously improving. Quantum measurements describing evolving configurations are required as part of the optical characterization and performances study of these devices. To ensure accuracy, it is necessary to determine a reliable evaluation of the expected quantum effects relevant to both stationary and time-dependent measurements. Based on a case study of a quantum well embedded in a nanoelectronic MOSFET device as the gate-recessed channel (GRC), a set of possible quantum measurements that can serve as a basis to similar applications of the rules on additional devices is presented and analyzed.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 5: Quantum Materials and Quantum Devices","pages":"1-8"},"PeriodicalIF":4.3,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142137560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：