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A Ripple-Based Real-Time Built-in-Resistance Compensation for Switching Battery Charger Achieving Fast Charging 基于纹波的实时内置电阻补偿,用于实现快速充电的开关电池充电器
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-09 DOI: 10.1109/TCSII.2024.3456470
Geuntae Park;Seongil Yeo;Chanjung Park;Kunhee Cho
This brief describes a real-time built-in-resistance (BIR) compensation for a switching charger designed to achieve fast charging. The proposed BIR detection utilizes the ripple components of the switching charger, enabling the detection of the BIR information at every switching cycle. The proposed BIR compensation can continuously detect the BIR information, thereby allowing the battery to be charged in constant-current (CC) mode for almost the entire charging period. The proposed switching charger has been implemented in a $0.18~mu $ m CMOS process, occupying a die area of 0.205mm2. The switching charger with the proposed BIR detection can charge in CC mode up to 98%, with CC mode charging time occupying 92.7% of the total charging time. The total charging time is reduced by 38.8% compared to conventional charging architecture. A peak efficiency of 95% is achieved.
本简介介绍了一种用于开关充电器的实时内置电阻(BIR)补偿装置,旨在实现快速充电。所提出的 BIR 检测利用了开关充电器的纹波元件,从而能够在每个开关周期检测 BIR 信息。拟议的 BIR 补偿可持续检测 BIR 信息,从而使电池在几乎整个充电期间都能以恒流 (CC) 模式充电。建议的开关充电器已在 0.18~mu $ m CMOS 工艺中实现,芯片面积为 0.205mm2。采用 BIR 检测技术的开关充电器在 CC 模式下的充电率高达 98%,CC 模式充电时间占总充电时间的 92.7%。与传统充电结构相比,总充电时间缩短了 38.8%。峰值效率达到 95%。
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引用次数: 0
IEEE Transactions on Circuits and Systems--II: Express Briefs Publication Information 电气和电子工程师学会电路与系统论文集--II:特快摘要》出版信息
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-05 DOI: 10.1109/TCSII.2024.3442051
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引用次数: 0
TechRxiv: Share Your Preprint Research with the World! TechRxiv:与世界分享您的预印本研究成果!
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-05 DOI: 10.1109/TCSII.2024.3454929
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引用次数: 0
IEEE Circuits and Systems Society Information 电气和电子工程师学会电路与系统协会信息
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-05 DOI: 10.1109/TCSII.2024.3442053
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引用次数: 0
A Sub-1-V Capacitively-Biased Voltage Reference With an Auto-Zeroed Buffer and a TC of 18-ppm/°C 具有自动清零缓冲器和 18-ppm/° C TC 的 1 V 以下电容偏压型电压基准
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-04 DOI: 10.1109/TCSII.2024.3454348
Heungsik Eum;Kofi A. A. Makinwa;Inhee Lee;Youngcheol Chae
This brief presents a capacitively-biased CMOS voltage reference, which can operate from a sub-1V supply while achieving a low temperature coefficient (TC) and a competitive power-supply rejection ratio (PSRR). The reference voltage is generated by a capacitive bias circuit that provides a well-defined proportional-to-absolute-temperature (PTAT) bias current for a $Delta $ Vth type reference that consists of two stacked MOSFETs with different threshold voltages. The generated output voltage is sampled by an auto-zeroed (AZ) buffer, which can drive capacitive loads up to 2 nF. Fabricated in a 65 nm CMOS process, the prototype voltage reference occupies 0.058 mm2, including the AZ buffer and an on-chip timing generator. It outputs a reference voltage of 204.1 mV with a minimum supply voltage of 0.7 V. It achieves a TC of 18 ppm/°C from $- 40~^{circ }$ C to $85~^{circ }$ C and a PSRR of −75 dB at 100 Hz with only $200~mu $ V ripple.
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引用次数: 0
A Compact and Efficient Hardware Accelerator for RNS-CKKS En/Decoding and En/Decryption 用于 RNS-CKKS 开/解码和开/解密的紧凑高效硬件加速器
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-03 DOI: 10.1109/TCSII.2024.3454024
Jianfei Wang;Chen Yang;Jia Hou;Fahong Zhang;Yishuo Meng;Yang Su;Leibo Liu
To accelerate RNS-CKKS, little attention is paid to the acceleration of the operations on the edge-client. However, the devices used by the edge-client are often low-end and have limited resources and computing power, so the performance of RNS-CKKS encoding, decoding, encryption and decryption also needs to be improved. Consequently, we propose a compact and efficient hardware accelerator architecture named CAEA for these operations. In order to improve the compactness of CAEA, a reconfigurable butterfly unit is proposed, which considers both complex number arithmetic and integer modular arithmetic, so that FFT/IFFT and NTT/INTT can be executed on unified hardware processing elements without additional resource and waste. Moreover, in order to improve the computational efficiency, we also improved the dataflow of encoding, decoding, encryption, and decryption on CAEA to reduce the number of required operations and latency. CAEA is synthesized based on SMIC 40nm technology, and is also implemented on Xilinx Kintex-7 and Zynq UltraScale+ FPGA. Compared with the prior related works, in terms of performance, CAEA can achieve $2.01times $ speedup for encoding and decoding, $1.13times sim ~87.86times $ speedup for encryption, and $3.03times sim ~69.64times $ speedup for decryption. Compared with the state-of-the-art work, CAEA can achieve $1.06times sim ~4.96times $ improvement in terms of area efficiency.
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引用次数: 0
A Soft-Switched Semi Dual Active Half Bridge Converter With Voltage Match Trapezoidal Modulation Control 带电压匹配梯形调制控制的软开关半双有源半桥转换器
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-02 DOI: 10.1109/TCSII.2024.3452727
Liting Li;Mei Su;Guo Xu;Li Jiang;Yonglu Liu
To address the demands for a wide voltage range and high efficiency in unidirectional low power applications, a semi dual active half bridge (DAHB) converter with soft switching capability and a voltage match trapezoidal modulation (VM-TZM) control are proposed. This converter has the fewest number of active switches among existing dual active bridge converters. With the proposed control law, the converter always works under voltage match condition, effectively decoupling the control variables while achieving low root-mean-square current. Besides, the active switches can realize zero-voltage-switching (ZVS) on and the diode can obtain zero-current-switching (ZCS) off within full working range. These characteristics and benefits of the proposed converter and control law are validated through an experimental prototype.
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引用次数: 0
ADP-Based Self-Triggered Optimal Control of Active Loads in DC Microgrid 基于 ADP 的直流微电网有功负载自触发优化控制
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-02 DOI: 10.1109/TCSII.2024.3452964
Hanguang Su;Gan Zhi;Huaguang Zhang;Jiawei Wang;Goran Strbac;He Ren
In this brief, an adaptive dynamic programming (ADP)-based self-triggered control (STC) method was proposed to address the optimization control problem of power buffer systems in DC microgrids. The optimization control problem of power buffers is addressed in the framework of non-zero sum games to ensure mutual cooperation among power buffers. In the proposed STC mechanism, the next triggering moment is determined by the current triggering information, avoiding continuous monitoring of devices under the event-triggered control (ETC) and reducing the occupation of system communication and computing resources. Besides, an experience replay (ER) method is introduced when updating the weights of the critic neural networks (NNs). The proposed method ensures the stability of the system, eliminates the Zeno phenomenon, and leads to an adjustable positive minimum triggering interval. The effectiveness of the proposed method is ultimately verified by using a DC microgrid case study.
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引用次数: 0
Ka-Band CMOS Variable-Gain Amplifier Using Capacitive Compensation Technique to Suppress Phase Error 利用电容补偿技术抑制相位误差的 Ka 波段 CMOS 可变增益放大器
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-30 DOI: 10.1109/TCSII.2024.3452098
Dongin Min;Changkun Park
In this brief, we designed a Ka-band variable-gain amplifier (VGA) using a 65-nm RFCMOS process. A capacitive compensation technique was proposed to suppress the phase error of the CMOS VGA without the additional required chip area. To this end, the cascode structure widely used in CMOS VGAs was analyzed, and based on the analyzed results, a technique of using an additional capacitor in the drain node of the common-source transistor of the cascode structure was proposed to suppress phase error. Because the proposed technique may be implemented by adding only one shunt capacitor, it is possible to efficiently utilize the chip area. In order to verify the feasibility of the proposed capacitive compensation technique, an CMOS VGA was fabricated using a 65-nm RFCMOS process. In the operating frequency range of 26.5 GHz to 30.0 GHz, the variable gain range was measured to be 20.4 dB. In this case, the measured RMS phase error was suppressed to be lower than 1.0°. In addition, only one capacitor was added for the proposed technique, so the chip size was compactly designed to be 0.056 mm2.
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引用次数: 0
A 512-nW 0.003-mm² Forward-Forward Closed Box Trainer for an Analog Voice Activity Detector in 28-nm CMOS 用于 28 纳米 CMOS 模拟语音活动检测器的 512-nW 0.003-mm2 正向-前向黑盒训练器
IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-30 DOI: 10.1109/TCSII.2024.3452112
Junde Li;Guoqiang Xin;Wei-Han Yu;Ka-Fai Un;Rui P. Martins;Pui-In Mak
Analog Voice Activity Detector (VAD) is a promising candidate for a power and cost-efficient solution for AIoT voice assistants. Regrettably, the PVT variation from the analog circuits and data misalignment from sensors limit the VAD accuracy with conventional backpropagation model-based training (BPMBT). This brief presents a forward-forward closed box trainer (FFBBT) for analog VADs. It trains the analog circuit without knowing the circuit model or finding its gradient. Thus, it is insensitive to PVT variation and offset, achieving a measured VAD accuracy improvement of ~3% and an accuracy variation reduction of $5.6{times }$ . Moreover, a Tensor-Compressed Derivative-Free Optimizer (TCDFO) is also proposed to reduce the required memory for FFBBT by $1600{times }$ . The FFBBT with TCDFO is synthesized in 28 nm CMOS with a power of 512 nW and an area of 0.003 mm2.
模拟语音活动检测器(VAD)是为人工智能物联网语音助手提供省电、低成本解决方案的理想选择。遗憾的是,模拟电路的 PVT 变化和传感器的数据错位限制了传统的基于反向传播模型的训练(BPMBT)的 VAD 精度。本简介介绍了模拟 VAD 的前向闭箱训练器 (FFBBT)。它在不知道电路模型或寻找其梯度的情况下训练模拟电路。因此,它对 PVT 变化和偏移不敏感,实现了 VAD 测量精度提高约 3%,精度变化减少 5.6{times }$ 。此外,还提出了一种张量压缩无衍生优化器(TCDFO),将 FFBBT 所需的内存减少了 1600{times }$ 。带有 TCDFO 的 FFBBT 采用 28 纳米 CMOS 工艺合成,功耗为 512 nW,面积为 0.003 mm2。
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IEEE Transactions on Circuits and Systems II: Express Briefs
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