Pub Date : 2024-09-26DOI: 10.1109/TCSII.2024.3462215
{"title":"IEEE Circuits and Systems Society Information","authors":"","doi":"10.1109/TCSII.2024.3462215","DOIUrl":"https://doi.org/10.1109/TCSII.2024.3462215","url":null,"abstract":"","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"71 10","pages":"C3-C3"},"PeriodicalIF":4.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10695787","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142328374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-26DOI: 10.1109/TCSII.2024.3462211
{"title":"IEEE Transactions on Circuits and Systems--II: Express Briefs Publication Information","authors":"","doi":"10.1109/TCSII.2024.3462211","DOIUrl":"https://doi.org/10.1109/TCSII.2024.3462211","url":null,"abstract":"","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"71 10","pages":"C2-C2"},"PeriodicalIF":4.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10695795","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142324351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/TCSII.2024.3466902
Chao-Yen Hsu;Tai-Cheng Lee
This brief presents a nested ring amplifier with dynamic-cascode-bias and gain-boosting techniques. The proposed amplifier achieves a gain of 90 dB while preserving the high-slew capability. The amplifier is employed in a MDAC for a calibration-free 11-bit 1-GS/s single-channel pipelined ADC. Furthermore, the proposed biasing circuits are utilized to alleviate PVT sensitivity. Fabricated in a 28-nm CMOS technology, the ADC achieves a 61.72-dB SFDR and 53.52-dB SNDR at a Nyquist input, while consuming 14.7 mW from a 1-V supply and yielding Schreier and Walden figure-of-merit (FoM) values of 159 dB and 37.9 fJ/conv.-step, respectively.
{"title":"A Calibration-Free 9.3-ENOB 1-GS/s Pipelined ADC With PVT-Insensitive Nested Ring Amplifiers","authors":"Chao-Yen Hsu;Tai-Cheng Lee","doi":"10.1109/TCSII.2024.3466902","DOIUrl":"https://doi.org/10.1109/TCSII.2024.3466902","url":null,"abstract":"This brief presents a nested ring amplifier with dynamic-cascode-bias and gain-boosting techniques. The proposed amplifier achieves a gain of 90 dB while preserving the high-slew capability. The amplifier is employed in a MDAC for a calibration-free 11-bit 1-GS/s single-channel pipelined ADC. Furthermore, the proposed biasing circuits are utilized to alleviate PVT sensitivity. Fabricated in a 28-nm CMOS technology, the ADC achieves a 61.72-dB SFDR and 53.52-dB SNDR at a Nyquist input, while consuming 14.7 mW from a 1-V supply and yielding Schreier and Walden figure-of-merit (FoM) values of 159 dB and 37.9 fJ/conv.-step, respectively.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 1","pages":"28-32"},"PeriodicalIF":4.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chimera states have attracted significant research interest due to their potential in modeling brain network functionality. Memristive nano-crossbars, known for their energy efficiency, massive parallelism, and synaptic-like properties, serve as a promising coupling medium in brain-inspired applications. The operation of these devices is strongly dictated by the non-linear mechanisms of memristor devices when studying synchronization phenomena. Expanding upon our previous work, which explored sneak-path currents in Chimera states, this study investigates the impact of fabricated Silicon Nitride (SiN) devices on the dynamics of Chua circuit (CC) networks. We conducted experimental evaluations to confirm the ability of SiN devices to retain their resistance state, thereby ensuring consistency in the crossbar array, a critical factor in maintaining chimera states during experiments. We employed an exponential memristor model to further investigate the non-linear dynamics within the CC network. Our results not only confirm the formation of various synchronization structures, such as chimera states and full chaotic synchronization but also reveal the intriguing formation of phase-lag structures. These structures, induced by the SiN-fitted model, exhibit distinctive characteristics marked by subtle and non-linear coupling behaviors, particularly evident at near-zero voltages. After analyzing our results, we present a comprehensive phase-parametric regime map, obtained by varying the coupling strength bifurcation parameter. This map provides valuable insights into the mechanisms governing the dynamics of CC networks equipepd with SiN-based memristor nanodevices, which have proven capable of capturing the complex dynamics of chimera states.
{"title":"Experimental Evaluation of Silicon Nitride Memristors as Coupling Elements for Chimera States in Chaotic Oscillator Networks","authors":"Karolos-Alexandros Tsakalos;Vasileios Ntinas;Nikolaos Vasileiadis;Astero Provata;Panagiotis Dimitrakis;Georgios Ch. Sirakoulis","doi":"10.1109/TCSII.2024.3466963","DOIUrl":"https://doi.org/10.1109/TCSII.2024.3466963","url":null,"abstract":"Chimera states have attracted significant research interest due to their potential in modeling brain network functionality. Memristive nano-crossbars, known for their energy efficiency, massive parallelism, and synaptic-like properties, serve as a promising coupling medium in brain-inspired applications. The operation of these devices is strongly dictated by the non-linear mechanisms of memristor devices when studying synchronization phenomena. Expanding upon our previous work, which explored sneak-path currents in Chimera states, this study investigates the impact of fabricated Silicon Nitride (SiN) devices on the dynamics of Chua circuit (CC) networks. We conducted experimental evaluations to confirm the ability of SiN devices to retain their resistance state, thereby ensuring consistency in the crossbar array, a critical factor in maintaining chimera states during experiments. We employed an exponential memristor model to further investigate the non-linear dynamics within the CC network. Our results not only confirm the formation of various synchronization structures, such as chimera states and full chaotic synchronization but also reveal the intriguing formation of phase-lag structures. These structures, induced by the SiN-fitted model, exhibit distinctive characteristics marked by subtle and non-linear coupling behaviors, particularly evident at near-zero voltages. After analyzing our results, we present a comprehensive phase-parametric regime map, obtained by varying the coupling strength bifurcation parameter. This map provides valuable insights into the mechanisms governing the dynamics of CC networks equipepd with SiN-based memristor nanodevices, which have proven capable of capturing the complex dynamics of chimera states.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 1","pages":"33-37"},"PeriodicalIF":4.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-23DOI: 10.1109/TCSII.2024.3465832
Weidong Xue;Xinwei Yu;Yisen Zhang;Junyan Ren
This brief introduces a 24V-to-1V hybrid converter with low-voltage power switches. By incorporating three flying capacitors in series with a two-phase switched-inductor, the proposed converter effectively functions as a 4.8V-to-1V converter. Thus, a high-voltage design is realized with low-voltage transistors known for their excellent figure of merit. As a result, the hybrid converter achieves an effective duty cycle five times higher and a better conversion efficiency compared with a double step-down converter (DSD) and a double series-capacitor converter (DSCBC) under identical power switch sizes and working conditions. The circuit is designed using a 0.15- $mu $