Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328302
P. Marsh, G. Ng, D. Pavlidis, K. Hong
Future space-based radiotelescopes and planetary radar projects plan to include THz frequency coverage. Such applications necessitate the use of high-reliability compact local oscillators (LO's) to drive the THz receivers' mixers. While THz molecular lasers can provide high power, they are bulky and not reliable enough for space applications. Presently, solid-state LO's show the greatest potential reliability and compactness. Among the solid-state sources, LO's based on varactor multiplier chains show the most promise in terms of potential output power and efficiency. The highest performance diodes have traditionally relied on whisker anode contacting which is suitable only for discrete devices and has limited reliability. To address these problems, planar diodes have been proposed and demonstrated using GaAs. This paper reports on a planar integrated technology which, unlike previous approaches, utilizes InP-based materials and plated Au airbridges to contact the anode. This airbridge technology reduces parasitics by avoiding the use of a bridge-supporting dielectric. The In/sub x/A/sub 1-x/As/InGaAs heterojunction concept permits high C-V nonlinearity, reduced access resistance (R/sub s/) and high saturation velocity. Furthermore, this developed technology is fully planar and lends itself to integration with passive elements for monolithic applications.<>
{"title":"InAlAs/InGaAs varactor diodes with THz cutoff frequencies fabricated by planar integrated technology","authors":"P. Marsh, G. Ng, D. Pavlidis, K. Hong","doi":"10.1109/ICIPRM.1994.328302","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328302","url":null,"abstract":"Future space-based radiotelescopes and planetary radar projects plan to include THz frequency coverage. Such applications necessitate the use of high-reliability compact local oscillators (LO's) to drive the THz receivers' mixers. While THz molecular lasers can provide high power, they are bulky and not reliable enough for space applications. Presently, solid-state LO's show the greatest potential reliability and compactness. Among the solid-state sources, LO's based on varactor multiplier chains show the most promise in terms of potential output power and efficiency. The highest performance diodes have traditionally relied on whisker anode contacting which is suitable only for discrete devices and has limited reliability. To address these problems, planar diodes have been proposed and demonstrated using GaAs. This paper reports on a planar integrated technology which, unlike previous approaches, utilizes InP-based materials and plated Au airbridges to contact the anode. This airbridge technology reduces parasitics by avoiding the use of a bridge-supporting dielectric. The In/sub x/A/sub 1-x/As/InGaAs heterojunction concept permits high C-V nonlinearity, reduced access resistance (R/sub s/) and high saturation velocity. Furthermore, this developed technology is fully planar and lends itself to integration with passive elements for monolithic applications.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115776532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328247
S. Beaumont
Nanometre-scale lithography allows transistors to be fabricated with excellent potential for performance above 100 GHz. Whether this performance is realised depends on the detailed construction of the device. Control of these details requires a 'total nanotechnology' approach to device fabrication which also offers right-first-time design of high performance circuits and predictable yield provided good physical forecasting tools become available for HEMTs. One may also use this approach to realise new device structures for specific applications. In this paper I want to show that the realisation of high performance sub-100 nm gate transistors demands semiconductor nanotechnology of the highest quality; and how that technology might be used to realise right-first-time, manufacturable systems.<>
{"title":"The applications of nanotechnology in electronic devices","authors":"S. Beaumont","doi":"10.1109/ICIPRM.1994.328247","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328247","url":null,"abstract":"Nanometre-scale lithography allows transistors to be fabricated with excellent potential for performance above 100 GHz. Whether this performance is realised depends on the detailed construction of the device. Control of these details requires a 'total nanotechnology' approach to device fabrication which also offers right-first-time design of high performance circuits and predictable yield provided good physical forecasting tools become available for HEMTs. One may also use this approach to realise new device structures for specific applications. In this paper I want to show that the realisation of high performance sub-100 nm gate transistors demands semiconductor nanotechnology of the highest quality; and how that technology might be used to realise right-first-time, manufacturable systems.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115463683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328147
J. Binsma, P. Thijs, T. van Dongen, M. Sander-Jochem, R. Slootweg
Strained-layer (SL) Multiple Quantum Well (MQW) InGaAs(P)/InGaAsP and InGaAs/InP structures are of large interest for a variety of optoelectronic devices in the 1300 and 1550 nm wavelength regions. Among these devices are lasers, amplifiers as well as modulators based on electrorefraction or electro-absorption effects. Recently, promising results were reported for electro-absorption modulators employing the Wannier-Stark effect. Such modulators need rather thin barrier layers (thickness, /spl les/7.5 nm) in order to achieve the required strong coupling between the quantum wells. A powerful technique for monolithic integration of modulators with lasers, waveguides, tapers etc. is area selective growth of MQW structures via Organometallic Vapour Phase Epitaxy (OMVPE). This technique allows local bandgap control and thereby the fabrication of all desired waveguide and active layers in a single epitaxial step. A prerequisite for applying this technique will be that the optimum overall designs (e.g. ratio of barrier to well thickness, confinement layers) of the MQW structures for the various parts are more or less similar. As there is no information available on the barrier thickness-effect on the performance of strained-layer InGaAs/InGaAsP MQW lasers, it was decided to study this for the entire range from coupled to decoupled QWs corresponding to barrier thicknesses from 2.5 to 20 nm.<>
{"title":"Effect of barrier width on the performance of compressively strained InGaAs/InGaAsP MQW lasers","authors":"J. Binsma, P. Thijs, T. van Dongen, M. Sander-Jochem, R. Slootweg","doi":"10.1109/ICIPRM.1994.328147","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328147","url":null,"abstract":"Strained-layer (SL) Multiple Quantum Well (MQW) InGaAs(P)/InGaAsP and InGaAs/InP structures are of large interest for a variety of optoelectronic devices in the 1300 and 1550 nm wavelength regions. Among these devices are lasers, amplifiers as well as modulators based on electrorefraction or electro-absorption effects. Recently, promising results were reported for electro-absorption modulators employing the Wannier-Stark effect. Such modulators need rather thin barrier layers (thickness, /spl les/7.5 nm) in order to achieve the required strong coupling between the quantum wells. A powerful technique for monolithic integration of modulators with lasers, waveguides, tapers etc. is area selective growth of MQW structures via Organometallic Vapour Phase Epitaxy (OMVPE). This technique allows local bandgap control and thereby the fabrication of all desired waveguide and active layers in a single epitaxial step. A prerequisite for applying this technique will be that the optimum overall designs (e.g. ratio of barrier to well thickness, confinement layers) of the MQW structures for the various parts are more or less similar. As there is no information available on the barrier thickness-effect on the performance of strained-layer InGaAs/InGaAsP MQW lasers, it was decided to study this for the entire range from coupled to decoupled QWs corresponding to barrier thicknesses from 2.5 to 20 nm.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131624753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328255
J. David, M. Hopkinson, R. Ghin, M. Pate
The avalanche breakdown behavior of InGa(Al)P has been investigated by growing a series of pin diode structures covering the material range from InGaP to InAlP. The results show that reverse leakage currents are very low in this material system in keeping with the large band-gap until the onset of avalanche breakdown. Comparing the breakdown voltage (Vbd) with that of GaAs, we find that significant increases are obtained, with InAlP having in excess of twice the Vbd of GaAs. Comparisons with AlGaAs structures of similar band-gap shows that the InGa(Al)P system still has a larger Vbd, suggesting that it may be better for power applications.<>
{"title":"Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions","authors":"J. David, M. Hopkinson, R. Ghin, M. Pate","doi":"10.1109/ICIPRM.1994.328255","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328255","url":null,"abstract":"The avalanche breakdown behavior of InGa(Al)P has been investigated by growing a series of pin diode structures covering the material range from InGaP to InAlP. The results show that reverse leakage currents are very low in this material system in keeping with the large band-gap until the onset of avalanche breakdown. Comparing the breakdown voltage (Vbd) with that of GaAs, we find that significant increases are obtained, with InAlP having in excess of twice the Vbd of GaAs. Comparisons with AlGaAs structures of similar band-gap shows that the InGa(Al)P system still has a larger Vbd, suggesting that it may be better for power applications.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131271226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328270
X. P. Jiang, P. Thiagarajan, G. Patrizi, G. Y. Robinson, H. Temkin, S. Forouhar, J. Vandenberg, D. Coblentz, R. Logan
We extend the phenomenological deformation potential strain model previously applied to InGaAs wells with InP barriers to quaternary wells and barriers. The model allows for any quaternary composition in the well or barrier, with the strain of either sign applied to the wells or barriers, as needed for comparison with advanced device structures. The model is tested by calculating the confinement energies of light and heavy hole transitions in compressively strained wells of InGaAsP clad by lattice matched barriers of InGaAsP. The calculated energies are compared with measurements carried out on multiquantum-well laser structures with compressive lattice mismatch strain as high as /spl Delta/a/a=0.75%. Excellent agreement is obtained between the extended model and the experiment.<>
{"title":"Optical transitions in strained quantum wells of In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/ with InGaAsP barriers","authors":"X. P. Jiang, P. Thiagarajan, G. Patrizi, G. Y. Robinson, H. Temkin, S. Forouhar, J. Vandenberg, D. Coblentz, R. Logan","doi":"10.1109/ICIPRM.1994.328270","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328270","url":null,"abstract":"We extend the phenomenological deformation potential strain model previously applied to InGaAs wells with InP barriers to quaternary wells and barriers. The model allows for any quaternary composition in the well or barrier, with the strain of either sign applied to the wells or barriers, as needed for comparison with advanced device structures. The model is tested by calculating the confinement energies of light and heavy hole transitions in compressively strained wells of InGaAsP clad by lattice matched barriers of InGaAsP. The calculated energies are compared with measurements carried out on multiquantum-well laser structures with compressive lattice mismatch strain as high as /spl Delta/a/a=0.75%. Excellent agreement is obtained between the extended model and the experiment.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126705720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328269
B. Opitz, A. Kohl, J. Kováč, S. Brittner, F. Grunberg, K. Heime, J. Woitok
We report photocurrent spectroscopy at 77 K as well as at room temperature on MOVPE grown PIN diodes containing In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As strained layer superlattices as a function of bias voltage. Pronounced excitonic features were observed, and clear evidence for the formation of Stark ladders was found for the first time in this material system. The absorption edge is energetically below but close to 1.55 /spl mu/m. Improved optical spectra are obtained for structures grown with a compensation of strain in well and barrier.<>
{"title":"Wannier-Stark effect in In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As superlattices of different compositions on InP","authors":"B. Opitz, A. Kohl, J. Kováč, S. Brittner, F. Grunberg, K. Heime, J. Woitok","doi":"10.1109/ICIPRM.1994.328269","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328269","url":null,"abstract":"We report photocurrent spectroscopy at 77 K as well as at room temperature on MOVPE grown PIN diodes containing In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As strained layer superlattices as a function of bias voltage. Pronounced excitonic features were observed, and clear evidence for the formation of Stark ladders was found for the first time in this material system. The absorption edge is energetically below but close to 1.55 /spl mu/m. Improved optical spectra are obtained for structures grown with a compensation of strain in well and barrier.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126751215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328305
O. Albrektsen, J. Salzman, P. Tidemand-Petersson, J. Hanberg, A. Moller-Larsen, J. M. Nielsen
The implementation of state-of-the-art semiconductor lasers with distributed feedback (DFB), and the optimization of the DFB resonator for specific operating characteristics, require, in many cases, a grating with carefully tailored, slowly varying parameters along the cavity axis. A change in the corrugation pitch and incorporation of discrete phase shifts along the cavity may be implemented by E-beam lithographic methods, and by changes in the geometrical parameters of the laser waveguide. A change in the coupling strength, |/spl kappa/|, is more difficult to realize. Recently, a novel method for fabricating a DFB laser with two discrete values of |/spl kappa/| in different sections of the laser cavity, was demonstrated, but the extension of this method to arbitrary variations in |/spl kappa/| along the laser is not straightforward. Selective organometallic vapor phase epitaxy (OMVPE) on masked substrates is an attractive option for epitaxial layer deposition with controllable thickness variations. Both the growth rate and the composition of ternary or quaternary layers are determined by the mask geometry. In this work, a novel method for the formation of DFB gratings is demonstrated, relying on selective OMVPE growth. The method does not require semiconductor etching, and furthermore it allows for a controlled variation of |/spl kappa/| along the laser cavity.<>
{"title":"Gratings for distributed feedback lasers formed by selective epitaxial growth","authors":"O. Albrektsen, J. Salzman, P. Tidemand-Petersson, J. Hanberg, A. Moller-Larsen, J. M. Nielsen","doi":"10.1109/ICIPRM.1994.328305","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328305","url":null,"abstract":"The implementation of state-of-the-art semiconductor lasers with distributed feedback (DFB), and the optimization of the DFB resonator for specific operating characteristics, require, in many cases, a grating with carefully tailored, slowly varying parameters along the cavity axis. A change in the corrugation pitch and incorporation of discrete phase shifts along the cavity may be implemented by E-beam lithographic methods, and by changes in the geometrical parameters of the laser waveguide. A change in the coupling strength, |/spl kappa/|, is more difficult to realize. Recently, a novel method for fabricating a DFB laser with two discrete values of |/spl kappa/| in different sections of the laser cavity, was demonstrated, but the extension of this method to arbitrary variations in |/spl kappa/| along the laser is not straightforward. Selective organometallic vapor phase epitaxy (OMVPE) on masked substrates is an attractive option for epitaxial layer deposition with controllable thickness variations. Both the growth rate and the composition of ternary or quaternary layers are determined by the mask geometry. In this work, a novel method for the formation of DFB gratings is demonstrated, relying on selective OMVPE growth. The method does not require semiconductor etching, and furthermore it allows for a controlled variation of |/spl kappa/| along the laser cavity.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115646779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328165
A. Ougazzaden, A. Mircea, S. Chelles, F. Devaux, F. Huet, G. Le-Roux
Electroabsorption (EA) modulators based on the quantum confined Stark effect (QCSE) reach a high level of performance using InGaAsP/lnGaAsP multi-quantum well (MQW) structures. However applications for optical fiber communications, such as in-line optical pulse reshaping and optical demultiplexing, require polarization independent operation. This means identical on-state attenuation and electroabsorption spectra for both TE and TM modes. That is, the same electron to heavy hole, and electron to light hole transition energies as well as their shift with the applied electric field; and the same oscillator strength for TE and TM modes. The growth was performed by atmospheric pressure MOVPE in a T-shaped reactor.<>
{"title":"High static performance polarization insensitive strained InGaAsP/InGaAsP MQW electroabsorption modulator grown by atmospheric pressure MOVPE","authors":"A. Ougazzaden, A. Mircea, S. Chelles, F. Devaux, F. Huet, G. Le-Roux","doi":"10.1109/ICIPRM.1994.328165","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328165","url":null,"abstract":"Electroabsorption (EA) modulators based on the quantum confined Stark effect (QCSE) reach a high level of performance using InGaAsP/lnGaAsP multi-quantum well (MQW) structures. However applications for optical fiber communications, such as in-line optical pulse reshaping and optical demultiplexing, require polarization independent operation. This means identical on-state attenuation and electroabsorption spectra for both TE and TM modes. That is, the same electron to heavy hole, and electron to light hole transition energies as well as their shift with the applied electric field; and the same oscillator strength for TE and TM modes. The growth was performed by atmospheric pressure MOVPE in a T-shaped reactor.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124227938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328279
S. Messenger, R. Walters, H. Cotal, G. Summers
This paper presents the radiation results on p/n In/sub 0.53/Ga0/sub 0.47/As bottom cells. The main conclusion is that In/sub 0.53/Ga0/sub 0.47/As solar cells display the same radiation tolerance, regardless of the cell polarity. This result is, in general, not expected. Previous results involving damage coefficients for both Si, GaAs, and InP show that the polarity of the device does indeed matter. This paper therefore gives device fabricators the liberty of choosing either type of polarity depending on their needs.<>
{"title":"Radiation degradation in In/sub 0.53/Ga/sub 0.47/As solar cells","authors":"S. Messenger, R. Walters, H. Cotal, G. Summers","doi":"10.1109/ICIPRM.1994.328279","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328279","url":null,"abstract":"This paper presents the radiation results on p/n In/sub 0.53/Ga0/sub 0.47/As bottom cells. The main conclusion is that In/sub 0.53/Ga0/sub 0.47/As solar cells display the same radiation tolerance, regardless of the cell polarity. This result is, in general, not expected. Previous results involving damage coefficients for both Si, GaAs, and InP show that the polarity of the device does indeed matter. This paper therefore gives device fabricators the liberty of choosing either type of polarity depending on their needs.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122702790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-03-27DOI: 10.1109/ICIPRM.1994.328164
D. Davies
Future optical communications networks will require large bandwidth, high capacity switching systems that can be controlled as easily and flexibly as possible; in a variety of applications involving high bit rate systems, photonic switching appears to offer advantages in the provision of space, time and wavelength switching. Optical amplifiers based on InGaAsP material technology are proving to be very flexible when employed in such switching devices. As well as offering compact, readily controlled gates with a considerable on/off ratio, their inherent gain can overcome splitting losses in spatial switching arrays, while their nonlinear and spectral properties allow a range of functions to be implemented suitable for high speed and multi-wavelength systems. Means of exploiting these properties can roughly be divided into devices where the optical path is controlled electronically via the injection current, and those with a d.c. injection current where incoming intense optical pulses cause modulation via nonlinear effects in the device active region. Examples of both will be discussed in this paper.<>
{"title":"Optical switching in InGaAsP amplifiers","authors":"D. Davies","doi":"10.1109/ICIPRM.1994.328164","DOIUrl":"https://doi.org/10.1109/ICIPRM.1994.328164","url":null,"abstract":"Future optical communications networks will require large bandwidth, high capacity switching systems that can be controlled as easily and flexibly as possible; in a variety of applications involving high bit rate systems, photonic switching appears to offer advantages in the provision of space, time and wavelength switching. Optical amplifiers based on InGaAsP material technology are proving to be very flexible when employed in such switching devices. As well as offering compact, readily controlled gates with a considerable on/off ratio, their inherent gain can overcome splitting losses in spatial switching arrays, while their nonlinear and spectral properties allow a range of functions to be implemented suitable for high speed and multi-wavelength systems. Means of exploiting these properties can roughly be divided into devices where the optical path is controlled electronically via the injection current, and those with a d.c. injection current where incoming intense optical pulses cause modulation via nonlinear effects in the device active region. Examples of both will be discussed in this paper.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"362 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122815716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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