Pub Date : 2019-02-19DOI: 10.1117/1.JMM.18.1.015502
P. Mahmoudi, H. Veladi, F. Pakdel, J. Frounchi
Abstract. Background: Optical stimulation of the brain is based on optrodes with integrated optical splitters to excite multiple neurons simultaneously. This requires efficient light delivery systems. Aim: In order to satisfy optical requirements, to reduce the fabrication costs, and to obtain less invasive implantation into the brain, we assess a polymer-based microdevice both in theory and experiments. Approach: In addition to design and evaluation of the device using Multiphysics software, to achieve a feasible implementation, we base our fabrication process on off-the-shelf ultraviolet adhesives as the functional material with fascinating optical and mechanical characteristics all together, easy photolithographic-only curing, and no more steps required for common soft lithographic-based materials. Results: Wideband transmission of optical signals over the visible/near-infrared together with uniform splitting of the input power from different light sources has been observed and recorded using an optical setup with acceptable agreement with the simulation outcomes. Conclusions: Our research proposes a flexible and biocompatible optical splitter to be used as a light delivery system for a wide variety of optical stimulation methods in neuroscience studies with fewer or no changes in the design, dimensions, and even exploited materials. So it is a multipurpose device.
{"title":"Low-cost optical splitter for neural stimulations using off-the-shelf ultraviolet adhesives","authors":"P. Mahmoudi, H. Veladi, F. Pakdel, J. Frounchi","doi":"10.1117/1.JMM.18.1.015502","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.015502","url":null,"abstract":"Abstract. Background: Optical stimulation of the brain is based on optrodes with integrated optical splitters to excite multiple neurons simultaneously. This requires efficient light delivery systems. Aim: In order to satisfy optical requirements, to reduce the fabrication costs, and to obtain less invasive implantation into the brain, we assess a polymer-based microdevice both in theory and experiments. Approach: In addition to design and evaluation of the device using Multiphysics software, to achieve a feasible implementation, we base our fabrication process on off-the-shelf ultraviolet adhesives as the functional material with fascinating optical and mechanical characteristics all together, easy photolithographic-only curing, and no more steps required for common soft lithographic-based materials. Results: Wideband transmission of optical signals over the visible/near-infrared together with uniform splitting of the input power from different light sources has been observed and recorded using an optical setup with acceptable agreement with the simulation outcomes. Conclusions: Our research proposes a flexible and biocompatible optical splitter to be used as a light delivery system for a wide variety of optical stimulation methods in neuroscience studies with fewer or no changes in the design, dimensions, and even exploited materials. So it is a multipurpose device.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"3 1","pages":"015502 - 015502"},"PeriodicalIF":2.3,"publicationDate":"2019-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88243966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-11DOI: 10.1117/1.JMM.18.1.014001
F. Khatkhatay
Abstract. Sampling-limited inline defect inspections may fall short in the timely detection of new defects or small baseline populations, especially when the defects have unique spatial orientations. In such cases, it may be beneficial to also consider fault detection and classification signals from unit process modules. Lithography scanners determine the optimal focus position for a wafer by a process called leveling. This work uses a defect analysis approach to examine focus spot data, a litho tool level signal extracted from wafer leveling, and to isolate the sources of inline defectivity from four consecutive front-end-of-line litho steps in a high-volume manufacturing fab. The scope is broadened to examine all litho layers from the same technology node that process on the same tool platform. This work highlights the immense potential of mining focus spot data as a powerful complement to inline defect monitoring.
{"title":"Analyzing wafer leveling data from high-volume manufacturing to identify the sources of inline defectivity","authors":"F. Khatkhatay","doi":"10.1117/1.JMM.18.1.014001","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.014001","url":null,"abstract":"Abstract. Sampling-limited inline defect inspections may fall short in the timely detection of new defects or small baseline populations, especially when the defects have unique spatial orientations. In such cases, it may be beneficial to also consider fault detection and classification signals from unit process modules. Lithography scanners determine the optimal focus position for a wafer by a process called leveling. This work uses a defect analysis approach to examine focus spot data, a litho tool level signal extracted from wafer leveling, and to isolate the sources of inline defectivity from four consecutive front-end-of-line litho steps in a high-volume manufacturing fab. The scope is broadened to examine all litho layers from the same technology node that process on the same tool platform. This work highlights the immense potential of mining focus spot data as a powerful complement to inline defect monitoring.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"5 1","pages":"014001 - 014001"},"PeriodicalIF":2.3,"publicationDate":"2019-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83620753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-08DOI: 10.1117/1.JMM.18.1.013503
H. Fukuda
Abstract. Projection lithography using extreme ultraviolet (EUV) light at 13-nm wavelength is expected to achieve production of integrated circuits below 10 nm design-rules. In pursuit of further miniaturization, however, stochastic pattern defect problems have arisen. Here, we discuss the possible impact of spatially inhomogeneous secondary electron (SE) generation on stochastic defects. Two mechanisms are investigated: (1) accidental connections of photon shot noises enhanced by densely localized SE generation and (2) cascading SE generation along photoelectron trajectory traveling from pattern edge into a dark region. Since such defect probabilities are extremely low (typically 10 − 4 to ∼10 − 12), results of Monte Carlo simulation based on classical optical image and electron scattering simulations are converted into probability functions for densities of physical/chemical events such as photon absorption, SE generation, and elementary reaction in chemically amplified resists. Probabilities of pattern formation and of defect generation are modeled using these functions. Results of performance optimization using a multiobjective genetic algorithm show higher stochastic defects probability in EUV than in conventional deep-UV exposure due to larger spatial inhomogeneity in reaction density and existence of SE generation strings. Defect probabilities are strongly dependent on absolute pattern sizes in the two mechanisms, regardless of the resolution capability of imaging systems. Guidelines for suppressing stochastic defects are suggested, such as homogenization of reaction density, material composition for increasing scattering cross-section, and suppression of pattern edge fluctuation.
{"title":"Localized and cascading secondary electron generation as causes of stochastic defects in extreme ultraviolet projection lithography","authors":"H. Fukuda","doi":"10.1117/1.JMM.18.1.013503","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.013503","url":null,"abstract":"Abstract. Projection lithography using extreme ultraviolet (EUV) light at 13-nm wavelength is expected to achieve production of integrated circuits below 10 nm design-rules. In pursuit of further miniaturization, however, stochastic pattern defect problems have arisen. Here, we discuss the possible impact of spatially inhomogeneous secondary electron (SE) generation on stochastic defects. Two mechanisms are investigated: (1) accidental connections of photon shot noises enhanced by densely localized SE generation and (2) cascading SE generation along photoelectron trajectory traveling from pattern edge into a dark region. Since such defect probabilities are extremely low (typically 10 − 4 to ∼10 − 12), results of Monte Carlo simulation based on classical optical image and electron scattering simulations are converted into probability functions for densities of physical/chemical events such as photon absorption, SE generation, and elementary reaction in chemically amplified resists. Probabilities of pattern formation and of defect generation are modeled using these functions. Results of performance optimization using a multiobjective genetic algorithm show higher stochastic defects probability in EUV than in conventional deep-UV exposure due to larger spatial inhomogeneity in reaction density and existence of SE generation strings. Defect probabilities are strongly dependent on absolute pattern sizes in the two mechanisms, regardless of the resolution capability of imaging systems. Guidelines for suppressing stochastic defects are suggested, such as homogenization of reaction density, material composition for increasing scattering cross-section, and suppression of pattern edge fluctuation.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"58 1","pages":"013503 - 013503"},"PeriodicalIF":2.3,"publicationDate":"2019-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89492427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-05DOI: 10.1117/1.JMM.18.1.010501
A. Ishfaque, Ashiqur Rahaman, Byungki Kim
The traditional state-of-the-art miniature directional microphones suffer from a higher noise level mainly due to size constraints. Herein, a miniature directional microphone mimicking the fly Ormia ochracea’s ear anatomy is presented with the prime focus on achieving higher signal-to-noise ratio at reduced size. The microphone has circular shape with aluminum nitride (AlN)-based piezoelectric readout scheme deposited at the center of the diaphragm. The 3-3 transduction mode is adopted for sensitivity enhancement. The microphone testing is performed in an anechoic chamber. Besides the bidirectional response, the A-weighted noise under broadband excitation is ∼29 dBA, which is lower than the optical directional microphone of Miles et al., which is the most prominent noise analysis work in the area of fly inspired MEMS directional microphone.
{"title":"Bioinspired low noise circular-shaped MEMS directional microphone","authors":"A. Ishfaque, Ashiqur Rahaman, Byungki Kim","doi":"10.1117/1.JMM.18.1.010501","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.010501","url":null,"abstract":"The traditional state-of-the-art miniature directional microphones suffer from a higher noise level mainly due to size constraints. Herein, a miniature directional microphone mimicking the fly Ormia ochracea’s ear anatomy is presented with the prime focus on achieving higher signal-to-noise ratio at reduced size. The microphone has circular shape with aluminum nitride (AlN)-based piezoelectric readout scheme deposited at the center of the diaphragm. The 3-3 transduction mode is adopted for sensitivity enhancement. The microphone testing is performed in an anechoic chamber. Besides the bidirectional response, the A-weighted noise under broadband excitation is ∼29 dBA, which is lower than the optical directional microphone of Miles et al., which is the most prominent noise analysis work in the area of fly inspired MEMS directional microphone.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"18 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2019-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74773885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-01DOI: 10.1117/1.JMM.18.1.015501
M. Hamblin, Thane Downing, S. Anderson, H. Schmidt, A. Hawkins
Abstract. Background: Many MEMS and optical sensor devices can benefit from layers that block transmission and suppress reflection of light across the visible spectrum. Because these devices can include complicated topography, many existing methods for depositing antireflective layers are difficult, impractical, or unusable. Aim: To create a light-blocking antireflective layer that works well with complicated MEMS and sensor devices, a layer should be made that is cheap, simple, and can be deposited and patterned with high resolution at low temperatures. Approach: Light blocking is achieved using an aluminum layer. Suppressing reflection is achieved by mixing aluminum oxide nanoparticles in photoresist to create a layer that partially absorbs and partially scatters light. Results: The combination of a layer of metal and a layer of nanoparticles and photoresist completely blocks transmission of light and significantly reduces reflections across the visible spectrum, particularly for shorter wavelengths. The layer is also patternable to sizes as small as a few microns with high resolution. Conclusion: By combining a metal layer and a layer of nanoparticles in photoresist, a simple, cheap, and effective light-blocking antireflective layer can be created that is compatible with planar devices with complex topography.
{"title":"Broadband antireflective light-blocking layer using nanoparticle suspension in photoresist with high-resolution patterning","authors":"M. Hamblin, Thane Downing, S. Anderson, H. Schmidt, A. Hawkins","doi":"10.1117/1.JMM.18.1.015501","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.015501","url":null,"abstract":"Abstract. Background: Many MEMS and optical sensor devices can benefit from layers that block transmission and suppress reflection of light across the visible spectrum. Because these devices can include complicated topography, many existing methods for depositing antireflective layers are difficult, impractical, or unusable. Aim: To create a light-blocking antireflective layer that works well with complicated MEMS and sensor devices, a layer should be made that is cheap, simple, and can be deposited and patterned with high resolution at low temperatures. Approach: Light blocking is achieved using an aluminum layer. Suppressing reflection is achieved by mixing aluminum oxide nanoparticles in photoresist to create a layer that partially absorbs and partially scatters light. Results: The combination of a layer of metal and a layer of nanoparticles and photoresist completely blocks transmission of light and significantly reduces reflections across the visible spectrum, particularly for shorter wavelengths. The layer is also patternable to sizes as small as a few microns with high resolution. Conclusion: By combining a metal layer and a layer of nanoparticles in photoresist, a simple, cheap, and effective light-blocking antireflective layer can be created that is compatible with planar devices with complex topography.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"107 1","pages":"015501 - 015501"},"PeriodicalIF":2.3,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77611565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-01-24DOI: 10.1117/1.JMM.18.1.013502
Yanjie Mao, Sikun Li, G. Sun, L. Duan, Weijie Shi, Yang Bu, Xiang-zhao Wang
Abstract. In optical lithography, aberrations induced by lens heating effects of a projection lens lead to degradation of imaging quality. In order to compensate for thermal aberrations, it is crucial to apply an accurate method for thermal aberration prediction. An effective and accurate method for thermal aberration prediction is proposed. A double exponential model is modified in respect of the timing of exposure tools, and a particle filter is used to adjust the double exponential model. Parameters of the model are updated recursively pursuant to the aberration data measured during the exchange of wafers. The updated model is used to predict thermal aberrations during the following exposure of wafers. The performance of the algorithm is evaluated by the simulation of a projection lens for argon fluoride lithography. Simulation results show that predictive errors of primary defocus and astigmatism are significantly reduced, and the mean value of wavefront error in the whole field of view is reduced by about 30% in a vertical line/space pattern. The proposed method is easily adaptable to different types of aberration measurement error.
{"title":"Predictor of thermal aberrations via particle filter for online compensation","authors":"Yanjie Mao, Sikun Li, G. Sun, L. Duan, Weijie Shi, Yang Bu, Xiang-zhao Wang","doi":"10.1117/1.JMM.18.1.013502","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.013502","url":null,"abstract":"Abstract. In optical lithography, aberrations induced by lens heating effects of a projection lens lead to degradation of imaging quality. In order to compensate for thermal aberrations, it is crucial to apply an accurate method for thermal aberration prediction. An effective and accurate method for thermal aberration prediction is proposed. A double exponential model is modified in respect of the timing of exposure tools, and a particle filter is used to adjust the double exponential model. Parameters of the model are updated recursively pursuant to the aberration data measured during the exchange of wafers. The updated model is used to predict thermal aberrations during the following exposure of wafers. The performance of the algorithm is evaluated by the simulation of a projection lens for argon fluoride lithography. Simulation results show that predictive errors of primary defocus and astigmatism are significantly reduced, and the mean value of wavefront error in the whole field of view is reduced by about 30% in a vertical line/space pattern. The proposed method is easily adaptable to different types of aberration measurement error.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"13 1","pages":"013502 - 013502"},"PeriodicalIF":2.3,"publicationDate":"2019-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90670048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-01-14DOI: 10.1117/1.JMM.18.1.013501
Xiaolong Wang, L. Tseng, D. Kazazis, Z. Tasdemir, M. Vockenhuber, I. Mochi, Y. Ekinci
Abstract. Extreme ultraviolet interference lithography (EUV-IL) is a relatively simple and inexpensive technique that can pattern high-resolution line/space and has been successfully used for the resist performance testing. While the aerial image in EUV-IL formed by two beams is straightforward to understand and has contrast of 1, the aerial image formed by four beams providing contact holes is rather complicated. The beam polarization and relative phases of the individual beams play a significant role in the aerial image formation in four-beam interference lithography. In particular, controlling the relative phase of the beams is very difficult to achieve due to short wavelength. To circumvent this problem, we propose an effective double exposure four-beam interference lithography method, by intentionally designing the grating with a slightly different pitch to create an optical path difference that is longer than the coherence length of the EUV light (13.5 nm). We numerically prove the effective double exposure four-beam interference is not sensitive to the phases difference and verify our analytical model by printing both positive tone chemically amplified resist and a negative tone inorganic resist.
{"title":"Studying resist performance for contact holes printing using EUV interference lithography","authors":"Xiaolong Wang, L. Tseng, D. Kazazis, Z. Tasdemir, M. Vockenhuber, I. Mochi, Y. Ekinci","doi":"10.1117/1.JMM.18.1.013501","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.013501","url":null,"abstract":"Abstract. Extreme ultraviolet interference lithography (EUV-IL) is a relatively simple and inexpensive technique that can pattern high-resolution line/space and has been successfully used for the resist performance testing. While the aerial image in EUV-IL formed by two beams is straightforward to understand and has contrast of 1, the aerial image formed by four beams providing contact holes is rather complicated. The beam polarization and relative phases of the individual beams play a significant role in the aerial image formation in four-beam interference lithography. In particular, controlling the relative phase of the beams is very difficult to achieve due to short wavelength. To circumvent this problem, we propose an effective double exposure four-beam interference lithography method, by intentionally designing the grating with a slightly different pitch to create an optical path difference that is longer than the coherence length of the EUV light (13.5 nm). We numerically prove the effective double exposure four-beam interference is not sensitive to the phases difference and verify our analytical model by printing both positive tone chemically amplified resist and a negative tone inorganic resist.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"18 1","pages":"013501 - 013501"},"PeriodicalIF":2.3,"publicationDate":"2019-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84436026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-01-14DOI: 10.1117/1.JMM.18.1.015001
E. Afsharipour, Ramin Soltanzadeh, Byoungyoul Park, D. Chrusch, C. Shafai
Abstract. A low-power three-degree-of-freedom scanning micromirror is presented. The 2- × 2-mm mirror is a gimbaless structure, directly supported by single-crystal microsprings. It is actuated by Lorentz force and is able to tilt about two axes and has linear motion in a third-axis. The transient and frequency responses of the micromirror are analyzed. The Lagrange’s equations of motions describing the dynamic behavior of the system are presented and show a good agreement with the experimental results. The fabricated microelectromechanical system mirror demonstrates a tilt angle of 22.8 deg at 247.5 Hz about y-axis, and 13.3 deg at 292.7 Hz about x-axis, in a 0.1 T magnetic field and 20-mA current on the mirror. Power consumption is 2.6 mW of power in tilting motions in resonant operation. With a total DC-drive current of 110 mA, 232-μm linear motion is achieved.
{"title":"Low-power three-degree-of-freedom Lorentz force microelectromechanical system mirror for optical applications","authors":"E. Afsharipour, Ramin Soltanzadeh, Byoungyoul Park, D. Chrusch, C. Shafai","doi":"10.1117/1.JMM.18.1.015001","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.015001","url":null,"abstract":"Abstract. A low-power three-degree-of-freedom scanning micromirror is presented. The 2- × 2-mm mirror is a gimbaless structure, directly supported by single-crystal microsprings. It is actuated by Lorentz force and is able to tilt about two axes and has linear motion in a third-axis. The transient and frequency responses of the micromirror are analyzed. The Lagrange’s equations of motions describing the dynamic behavior of the system are presented and show a good agreement with the experimental results. The fabricated microelectromechanical system mirror demonstrates a tilt angle of 22.8 deg at 247.5 Hz about y-axis, and 13.3 deg at 292.7 Hz about x-axis, in a 0.1 T magnetic field and 20-mA current on the mirror. Power consumption is 2.6 mW of power in tilting motions in resonant operation. With a total DC-drive current of 110 mA, 232-μm linear motion is achieved.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"117 1","pages":"015001 - 015001"},"PeriodicalIF":2.3,"publicationDate":"2019-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81888002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-01-08DOI: 10.1117/1.JMM.18.1.011001
S. Engelmann, R. Wise, R. Gronheid, N. Felix
Abstract. This guest editorial summarizes the Special Section on Challenges and Approaches to EUV-Based Patterning for High-Volume Manufacturing Applications
摘要这篇客座社论总结了关于大批量制造应用中基于euv的模式的挑战和方法的特别部分
{"title":"Special Section Guest Editorial: Challenges and Approaches to EUV-Based Patterning for High-Volume Manufacturing Applications","authors":"S. Engelmann, R. Wise, R. Gronheid, N. Felix","doi":"10.1117/1.JMM.18.1.011001","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.011001","url":null,"abstract":"Abstract. This guest editorial summarizes the Special Section on Challenges and Approaches to EUV-Based Patterning for High-Volume Manufacturing Applications","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"86 1","pages":"011001 - 011001"},"PeriodicalIF":2.3,"publicationDate":"2019-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80783389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-01-01DOI: 10.1117/1.JMM.18.1.015002
Chia-Hsu Hsieh, Yi-Chan Yeh, Le-Quyen Ly, Guan-Jie Su, Shao-En Tsai, Yu-Hua Ye, Yu-Cheng Lin, I. Huang
Abstract. Using microelectromechanical systems technology, a high-performance extended-gate field-effect transistor (EGFET)-based pesticide microsensor for organophosphorus and carbamate (CM) detection is developed. To minimize the whole pesticide-sensing system, we also integrated a planar Ti/Ag/AgCl/KCl-gel microreference electrode into the same silicon chip. The total dimensions of the proposed pesticide-sensing system are only 0.92 × 0.95 × 0.1 cm3. This EGFET-based microsensor for organophosphorus and CMs demonstrates extremely high sensitivity (194 and 268.1 mV/dec, respectively) and sensing linearity (0.993 and 0.974, respectively) and extremely low response time (120 and 300 s, respectively). The microsensor detection limit for both pesticides is 0.001 ppm.
{"title":"Extended-gate field-effect transistor-based pesticide microsensor for the detection of organophosphorus and carbamate","authors":"Chia-Hsu Hsieh, Yi-Chan Yeh, Le-Quyen Ly, Guan-Jie Su, Shao-En Tsai, Yu-Hua Ye, Yu-Cheng Lin, I. Huang","doi":"10.1117/1.JMM.18.1.015002","DOIUrl":"https://doi.org/10.1117/1.JMM.18.1.015002","url":null,"abstract":"Abstract. Using microelectromechanical systems technology, a high-performance extended-gate field-effect transistor (EGFET)-based pesticide microsensor for organophosphorus and carbamate (CM) detection is developed. To minimize the whole pesticide-sensing system, we also integrated a planar Ti/Ag/AgCl/KCl-gel microreference electrode into the same silicon chip. The total dimensions of the proposed pesticide-sensing system are only 0.92 × 0.95 × 0.1 cm3. This EGFET-based microsensor for organophosphorus and CMs demonstrates extremely high sensitivity (194 and 268.1 mV/dec, respectively) and sensing linearity (0.993 and 0.974, respectively) and extremely low response time (120 and 300 s, respectively). The microsensor detection limit for both pesticides is 0.001 ppm.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":"2007 1","pages":"015002 - 015002"},"PeriodicalIF":2.3,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82485053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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