Pub Date : 2024-03-09DOI: 10.1109/JMEMS.2024.3394509
Yufeng Gao;Lei Zhao;Chong Yang;Yipeng Lu
In this paper, we present air-coupled lead-zirconate-titanate (PZT) piezoelectric micromachined ultrasonic transducers (PMUTs) which demonstrate ultra-wide frequency tuning range via controllable in-plane stress generated by DC bias voltage. A PMUT designed to have a resonant frequency of ~200kHz generates a 223kHz total frequency shift from 182.5kHz to 405.5kHz with ±35V DC bias (corresponding to 97.8% variation referring to the resonant frequency without bias), and a 124kHz frequency shift from 188kHz to 312kHz with ±10V DC bias (corresponding to 54.4% variation). The effects of DC bias tuning were further characterized by both impedance analyzer and laser Doppler vibrometer (LDV), the fluctuation of electromechanical coupling coefficient ( ${k}_{mathrm {t}}^{mathrm {2}}$ ) and the change of the direction of polarization of the piezoelectric layer were successfully observed. Frequency tuning along different curves of the hysteresis loop was studied, and given both reasonably good ${k}_{mathrm {t}}^{mathrm {2}}$ (<5%)> $1sim 6$ V DC bias is chosen from the best option of the hysteresis loop. Furthermore, characteristics of PMUTs with different top electrode thickness were studied and summarized, and thinner top electrode was considered as an optimization method to achieve better performance for PMUT under DC bias in terms of frequency tuning. PMUTs with various frequencies were evaluated, and measurement results show a smaller tuning range of PMUTs with higher resonant frequency than those with lower resonant frequency due to the different membrane modulus, and, therefore different contributions of intrinsic stress generated by DC bias to the overall membrane modulus. [2024-0036]
{"title":"Characterization and Optimization of PZT-Based PMUTs With Wide Range Frequency Tuning","authors":"Yufeng Gao;Lei Zhao;Chong Yang;Yipeng Lu","doi":"10.1109/JMEMS.2024.3394509","DOIUrl":"10.1109/JMEMS.2024.3394509","url":null,"abstract":"In this paper, we present air-coupled lead-zirconate-titanate (PZT) piezoelectric micromachined ultrasonic transducers (PMUTs) which demonstrate ultra-wide frequency tuning range via controllable in-plane stress generated by DC bias voltage. A PMUT designed to have a resonant frequency of ~200kHz generates a 223kHz total frequency shift from 182.5kHz to 405.5kHz with ±35V DC bias (corresponding to 97.8% variation referring to the resonant frequency without bias), and a 124kHz frequency shift from 188kHz to 312kHz with ±10V DC bias (corresponding to 54.4% variation). The effects of DC bias tuning were further characterized by both impedance analyzer and laser Doppler vibrometer (LDV), the fluctuation of electromechanical coupling coefficient (\u0000<inline-formula> <tex-math>${k}_{mathrm {t}}^{mathrm {2}}$ </tex-math></inline-formula>\u0000) and the change of the direction of polarization of the piezoelectric layer were successfully observed. Frequency tuning along different curves of the hysteresis loop was studied, and given both reasonably good \u0000<inline-formula> <tex-math>${k}_{mathrm {t}}^{mathrm {2}}$ </tex-math></inline-formula>\u0000 (<5%)> <tex-math>$1sim 6$ </tex-math></inline-formula>\u0000V DC bias is chosen from the best option of the hysteresis loop. Furthermore, characteristics of PMUTs with different top electrode thickness were studied and summarized, and thinner top electrode was considered as an optimization method to achieve better performance for PMUT under DC bias in terms of frequency tuning. PMUTs with various frequencies were evaluated, and measurement results show a smaller tuning range of PMUTs with higher resonant frequency than those with lower resonant frequency due to the different membrane modulus, and, therefore different contributions of intrinsic stress generated by DC bias to the overall membrane modulus. [2024-0036]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 4","pages":"427-437"},"PeriodicalIF":2.5,"publicationDate":"2024-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140925934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lithium-niobate-on-insulator (LNOI) platform has emerged as a promising solution for fabricating wideband and low-loss surface acoustic wave (SAW) filters. However, it simultaneously excites higher order modes, causing out-of-band (OoB) spurious responses. In this work, the elimination condition for higher order modes in LiNbO3 (LN)/SiO2/poly-Si/Si structure was summarized from analyzing the coupling mechanism between the velocities of shear bulk acoustic waves ( $V_{mathrm {S}}$ ) of Si and that of higher order mode ( $V_{mathrm {p-h}}$ ). According to the elimination condition of $V_{mathrm {p-h}}$ exceeding $V_{mathrm {S}}$ , meticulously selecting the crystal plane and propagation angle $alpha $ of Si to obtain desired $V_{mathrm {S}}$ is necessary. First, the resonators built on $32^{circ }Y$ - $X$ LN/SiO2/poly-Si/Si platforms with typical Si (100), Si (110) and Si (111) substrates were studied by simulation, which reveals that Si (110) manifests the optimal suppression capacity with $alpha _{110}$ window of $18^{circ }-60^{circ }$ , followed by the Si (111) plane of $alpha _{111}= 14^{circ }-36^{circ }$ . Si (100) substrate can hardly suppress higher order modes. Furthermore, resonators were designed and prepared on the above three Si planes. In coherence with the theoretical prediction, the resonators built on Si (135°, 90°, 45°) substrate can effectively eliminate the OoB ripples, while the resonators based on Si (0°, 0°, 45°) and Si (135°, 54.74°, 60°) substrates both excite the higher order modes, whose maximum admittance ratios (AR $_{mathrm {h}}$ ) are 15.0 dB and 19.9 dB, respectively. This work demonstrates a valid methodology for constructing spurious-free filters meeting 5G requirements. [2023-0212]
{"title":"Higher Order Mode Elimination for SAW Resonators Based on LiNbO₃/SiO₂/poly-Si/Si Substrate by Si Orientation Optimization","authors":"Huiping Xu;Sulei Fu;Rongxuan Su;Peisen Liu;Boyuan Xiao;Shuai Zhang;Rui Wang;Cheng Song;Fei Zeng;Weibiao Wang;Feng Pan","doi":"10.1109/JMEMS.2024.3369639","DOIUrl":"10.1109/JMEMS.2024.3369639","url":null,"abstract":"Lithium-niobate-on-insulator (LNOI) platform has emerged as a promising solution for fabricating wideband and low-loss surface acoustic wave (SAW) filters. However, it simultaneously excites higher order modes, causing out-of-band (OoB) spurious responses. In this work, the elimination condition for higher order modes in LiNbO3 (LN)/SiO2/poly-Si/Si structure was summarized from analyzing the coupling mechanism between the velocities of shear bulk acoustic waves (\u0000<inline-formula> <tex-math>$V_{mathrm {S}}$ </tex-math></inline-formula>\u0000) of Si and that of higher order mode (\u0000<inline-formula> <tex-math>$V_{mathrm {p-h}}$ </tex-math></inline-formula>\u0000). According to the elimination condition of \u0000<inline-formula> <tex-math>$V_{mathrm {p-h}}$ </tex-math></inline-formula>\u0000 exceeding \u0000<inline-formula> <tex-math>$V_{mathrm {S}}$ </tex-math></inline-formula>\u0000, meticulously selecting the crystal plane and propagation angle \u0000<inline-formula> <tex-math>$alpha $ </tex-math></inline-formula>\u0000 of Si to obtain desired \u0000<inline-formula> <tex-math>$V_{mathrm {S}}$ </tex-math></inline-formula>\u0000 is necessary. First, the resonators built on \u0000<inline-formula> <tex-math>$32^{circ }Y$ </tex-math></inline-formula>\u0000-\u0000<inline-formula> <tex-math>$X$ </tex-math></inline-formula>\u0000 LN/SiO2/poly-Si/Si platforms with typical Si (100), Si (110) and Si (111) substrates were studied by simulation, which reveals that Si (110) manifests the optimal suppression capacity with \u0000<inline-formula> <tex-math>$alpha _{110}$ </tex-math></inline-formula>\u0000 window of \u0000<inline-formula> <tex-math>$18^{circ }-60^{circ }$ </tex-math></inline-formula>\u0000, followed by the Si (111) plane of \u0000<inline-formula> <tex-math>$alpha _{111}= 14^{circ }-36^{circ }$ </tex-math></inline-formula>\u0000. Si (100) substrate can hardly suppress higher order modes. Furthermore, resonators were designed and prepared on the above three Si planes. In coherence with the theoretical prediction, the resonators built on Si (135°, 90°, 45°) substrate can effectively eliminate the OoB ripples, while the resonators based on Si (0°, 0°, 45°) and Si (135°, 54.74°, 60°) substrates both excite the higher order modes, whose maximum admittance ratios (AR\u0000<inline-formula> <tex-math>$_{mathrm {h}}$ </tex-math></inline-formula>\u0000) are 15.0 dB and 19.9 dB, respectively. This work demonstrates a valid methodology for constructing spurious-free filters meeting 5G requirements. [2023-0212]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 2","pages":"163-173"},"PeriodicalIF":2.7,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140072791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-07DOI: 10.1109/JMEMS.2024.3371829
Almur A. S. Rabih;Seyedfakhreddin Nabavi;Michaël Ménard;Frederic Nabki
This article proposes an electrothermal three-degrees-of-freedom (3-DOF) micro-positioner equipped with a waveguide path, which can potentially be used for chip-to-chip alignment in photonic integrated circuits. The micro-positioner provides translational displacements along the x-, y- and z- axes with manageable levels of cross-sensitivity between axes. A fabricated prototype provides displacements of $pm 3.35~mu text{m}$ at 105 mW along the x-axis, and $+4.5~mu text{m}$ at 140 mW along the y-axis. Moreover, $+7~mu text{m}$ of out-of-plane displacement is achieved along the z-axis when 210 mW is applied to the x-axis actuators to buckle the structure. The AC response of the micro-positioner shows that the fundamental resonance mode occurs at 18.8 kHz. [2023-0208]
本文提出了一种配备波导路径的电热三自由度（3-DOF）微型定位器，可用于光子集成电路中芯片到芯片的对准。该微型定位器沿 x、y 和 z 轴提供平移位移，各轴之间的交叉灵敏度在可控范围内。制造出的原型在 105 mW 的功率下可沿 x 轴提供 $pm 3.35~mu text{m}$，在 140 mW 的功率下可沿 y 轴提供 $+4.5~mu text{m}$。此外，当对 x 轴致动器施加 210 mW 以扣合结构时，沿 z 轴可实现 $+7~mu text{m}$的平面外位移。微型定位器的交流响应显示，基本共振模式发生在 18.8 kHz。[2023-0208]
{"title":"A 3 Degrees-of-Freedom Electrothermal Micro-Positioner for Optical Chip-to-Chip Alignment","authors":"Almur A. S. Rabih;Seyedfakhreddin Nabavi;Michaël Ménard;Frederic Nabki","doi":"10.1109/JMEMS.2024.3371829","DOIUrl":"10.1109/JMEMS.2024.3371829","url":null,"abstract":"This article proposes an electrothermal three-degrees-of-freedom (3-DOF) micro-positioner equipped with a waveguide path, which can potentially be used for chip-to-chip alignment in photonic integrated circuits. The micro-positioner provides translational displacements along the x-, y- and z- axes with manageable levels of cross-sensitivity between axes. A fabricated prototype provides displacements of \u0000<inline-formula> <tex-math>$pm 3.35~mu text{m}$ </tex-math></inline-formula>\u0000 at 105 mW along the x-axis, and \u0000<inline-formula> <tex-math>$+4.5~mu text{m}$ </tex-math></inline-formula>\u0000 at 140 mW along the y-axis. Moreover, \u0000<inline-formula> <tex-math>$+7~mu text{m}$ </tex-math></inline-formula>\u0000 of out-of-plane displacement is achieved along the z-axis when 210 mW is applied to the x-axis actuators to buckle the structure. The AC response of the micro-positioner shows that the fundamental resonance mode occurs at 18.8 kHz. [2023-0208]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 2","pages":"260-273"},"PeriodicalIF":2.7,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140072152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-05DOI: 10.1109/JMEMS.2024.3360460
Xiaoyan Sun;Haikuan Chen;Zhouwei He;Haoning Zheng;Ji’an Duan;Youwang Hu
This paper reports a method to optimize the structure of a hemispherical shell resonator by reducing the thermoelastic dissipation. In accordance with the thermoelastic damping theory, we set up a thermal insulation structure to change the heat conduction distance to improve the thermoelastic quality factor. And according to the distribution of elastic strain energy on the resonator, we set up the thermal insulating cavities and thermal insulating layers at the top and rim of the resonator to change the heat conduction distance, respectively. The vibration characteristics of the four new resonators are compared with the conventional resonator by finite element calculation, and the new structural resonators are fabricated with the optimal parameter. We measured that the quality factor ( $Q$ -factor) of the optimized resonator was improved by 13.8 times than that of the original structural resonator. It is also found that by adjusting the insulation structure, not only the thermoelastic quality factor of the resonator can be improved, but also the modal frequency of the resonator can be adjusted, which is able to realize the fine control of the vibration characteristics of the resonator. [2023-0168]
{"title":"Optimization of Hemispherical Shell Resonator Structure Based on Thermoelastic Dissipation","authors":"Xiaoyan Sun;Haikuan Chen;Zhouwei He;Haoning Zheng;Ji’an Duan;Youwang Hu","doi":"10.1109/JMEMS.2024.3360460","DOIUrl":"10.1109/JMEMS.2024.3360460","url":null,"abstract":"This paper reports a method to optimize the structure of a hemispherical shell resonator by reducing the thermoelastic dissipation. In accordance with the thermoelastic damping theory, we set up a thermal insulation structure to change the heat conduction distance to improve the thermoelastic quality factor. And according to the distribution of elastic strain energy on the resonator, we set up the thermal insulating cavities and thermal insulating layers at the top and rim of the resonator to change the heat conduction distance, respectively. The vibration characteristics of the four new resonators are compared with the conventional resonator by finite element calculation, and the new structural resonators are fabricated with the optimal parameter. We measured that the quality factor (\u0000<inline-formula> <tex-math>$Q$ </tex-math></inline-formula>\u0000-factor) of the optimized resonator was improved by 13.8 times than that of the original structural resonator. It is also found that by adjusting the insulation structure, not only the thermoelastic quality factor of the resonator can be improved, but also the modal frequency of the resonator can be adjusted, which is able to realize the fine control of the vibration characteristics of the resonator. [2023-0168]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 2","pages":"133-142"},"PeriodicalIF":2.7,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140043917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We studied the temperature effects on the resonant frequency of nano piezoelectric mechanical resonators based on Hf0.5Zr0.5O2 thin films. Two square-shaped resonators of 30 $mu$ m and 50 $mu$ m in length were fabricated and tested, having a resonant frequency of 225.8 kHz and 98.5 kHz, respectively. The temperature coefficient of frequency (TCF) of the devices was characterized in the range from −20 °C to 147 °C. Both devices exhibited a positive TCF around 83.6 ppm/°C to 105 ppm/°C in the range from 30 °C to 147 °C, which may result from the combined effect of thermal expansion mismatch between the materials and the temperature coefficient of Young’s modulus of the HZO material. Moreover, the 50 $mu$ m device shows a negative TCF around −110 ppm/°C to −99.9 ppm/°C within the range from −20 °C to 30 °C, which may be due to stress relaxation during the heating process. These results underscore the significance of HZO material in nanoscale piezoelectric resonator applications and lay the foundation for our future work aimed at developing nanoscale piezoelectric devices based on HZO. [2024-0040]
{"title":"Characterization of a Temperature-Sensitive Nano Piezoelectric Mechanical Resonator With a 20nm Free-Standing Hf0.5Zr0.5O2 Membrane","authors":"Jingyi Zhang;Haoqi Lyu;Wuhao Yang;Hai Zhong;Zhuohui Liu;Xiaorui Bie;Xingyin Xiong;Zheng Wang;Chen Ge;Xudong Zou","doi":"10.1109/JMEMS.2024.3392402","DOIUrl":"10.1109/JMEMS.2024.3392402","url":null,"abstract":"We studied the temperature effects on the resonant frequency of nano piezoelectric mechanical resonators based on Hf0.5Zr0.5O2 thin films. Two square-shaped resonators of 30 \u0000<inline-formula> <tex-math>$mu$ </tex-math></inline-formula>\u0000 m and 50 \u0000<inline-formula> <tex-math>$mu$ </tex-math></inline-formula>\u0000 m in length were fabricated and tested, having a resonant frequency of 225.8 kHz and 98.5 kHz, respectively. The temperature coefficient of frequency (TCF) of the devices was characterized in the range from −20 °C to 147 °C. Both devices exhibited a positive TCF around 83.6 ppm/°C to 105 ppm/°C in the range from 30 °C to 147 °C, which may result from the combined effect of thermal expansion mismatch between the materials and the temperature coefficient of Young’s modulus of the HZO material. Moreover, the 50 \u0000<inline-formula> <tex-math>$mu$ </tex-math></inline-formula>\u0000 m device shows a negative TCF around −110 ppm/°C to −99.9 ppm/°C within the range from −20 °C to 30 °C, which may be due to stress relaxation during the heating process. These results underscore the significance of HZO material in nanoscale piezoelectric resonator applications and lay the foundation for our future work aimed at developing nanoscale piezoelectric devices based on HZO. [2024-0040]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 4","pages":"405-407"},"PeriodicalIF":2.5,"publicationDate":"2024-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140838831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, we present a surface micromachined Pirani vacuum gauge integrated with a stacked temperature sensor using CMOS-MEMS technology. The proposed Pirani gauge features a $2.23~mu text{m}$ thick suspended microheater, which is positioned between two designed heat sinks. The upper and lower gap spacing between the heat sink and the microheater is $0.53~mu text{m}$ , which is made by the surface etching of two metal films. Additionally, a temperature sensor based on a poly-Si resistor is directly integrated into the lower heat sink. The temperature sensor shows a sensitivity of 45 ohm/°C over a linear range of 10~60 °C, while its measurement error is less than 0.11 °C in the worst case. The Pirani gauge achieves a high sensitivity of 0.96 V/Dec under fine vacuum conditions, and its heating power is less than 8.3 mW in the vacuum range of 0.8~14000 Pa. Moreover, the measured output of the Pirani gauge closely matches the proposed semi-empirical model, while the noise measurements indicate that the sensor has a resolution as low as $6.4times 10 ^{mathbf {-3}}$ Pa in very fine vacuum conditions. This integrated Pirani gauge and temperature sensor system, in combination with its high performance, makes it a promising sensing node for vacuum and temperature monitoring in semiconductor equipment. [2023-0184]
{"title":"Surface Micromachined CMOS-MEMS Pirani Vacuum Gauge With Stacked Temperature Sensor","authors":"Xiangyu Song;Lifeng Huang;Yuanjing Lin;Linze Hong;Wei Xu","doi":"10.1109/JMEMS.2024.3367380","DOIUrl":"10.1109/JMEMS.2024.3367380","url":null,"abstract":"In this paper, we present a surface micromachined Pirani vacuum gauge integrated with a stacked temperature sensor using CMOS-MEMS technology. The proposed Pirani gauge features a \u0000<inline-formula> <tex-math>$2.23~mu text{m}$ </tex-math></inline-formula>\u0000 thick suspended microheater, which is positioned between two designed heat sinks. The upper and lower gap spacing between the heat sink and the microheater is \u0000<inline-formula> <tex-math>$0.53~mu text{m}$ </tex-math></inline-formula>\u0000, which is made by the surface etching of two metal films. Additionally, a temperature sensor based on a poly-Si resistor is directly integrated into the lower heat sink. The temperature sensor shows a sensitivity of 45 ohm/°C over a linear range of 10~60 °C, while its measurement error is less than 0.11 °C in the worst case. The Pirani gauge achieves a high sensitivity of 0.96 V/Dec under fine vacuum conditions, and its heating power is less than 8.3 mW in the vacuum range of 0.8~14000 Pa. Moreover, the measured output of the Pirani gauge closely matches the proposed semi-empirical model, while the noise measurements indicate that the sensor has a resolution as low as \u0000<inline-formula> <tex-math>$6.4times 10 ^{mathbf {-3}}$ </tex-math></inline-formula>\u0000 Pa in very fine vacuum conditions. This integrated Pirani gauge and temperature sensor system, in combination with its high performance, makes it a promising sensing node for vacuum and temperature monitoring in semiconductor equipment. [2023-0184]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 2","pages":"274-281"},"PeriodicalIF":2.7,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10452801","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140004934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work presents a rapid quantification approach for on-chip, trapped magnetic nanoparticle drug conjugate (MD) and tests its in-vitro efficacy using an integrated piezoelectric/ferromagnetic bilayer structure-based magnetoelectric sensor coupled magnetic microfluidic device. The MD trapping is accomplished using triangular-shaped, patterned permanent magnet integrated using elastomer-free, pure NdFeB micro-powder that generates magnetic forces up to 0.2 pN on MDs. This trapped drug is flushed in a local concentration at the outlet well of the microfluidic device, where the magnetoelectric sensor is placed. The concentration and position of the trapped MD varies with the change in flow rate from 0.01- $0.1 ~mu text{l}$ /min. Upon exposure to IR (Infrared) irradiation pulses, the sensor detects 0.33-0.21 nA current for 0- $500 ~mu text{g}$ /ml concentration due to the pyroelectric effect and exhibits remarkable sensitivity (0.33 nA.ml/ $mu text{g}$ ) and response time ( $ < 2text{s}$ ). [2023-0218]
{"title":"Infrared-Driven Rapid Quantification of Magnetophoretically Trapped Drug","authors":"Vinit Kumar Yadav;Pankaj Pathak;Preetha Ganguly;Prashant Mishra;Samaresh Das;Dhiman Mallick","doi":"10.1109/JMEMS.2024.3365538","DOIUrl":"10.1109/JMEMS.2024.3365538","url":null,"abstract":"This work presents a rapid quantification approach for on-chip, trapped magnetic nanoparticle drug conjugate (MD) and tests its in-vitro efficacy using an integrated piezoelectric/ferromagnetic bilayer structure-based magnetoelectric sensor coupled magnetic microfluidic device. The MD trapping is accomplished using triangular-shaped, patterned permanent magnet integrated using elastomer-free, pure NdFeB micro-powder that generates magnetic forces up to 0.2 pN on MDs. This trapped drug is flushed in a local concentration at the outlet well of the microfluidic device, where the magnetoelectric sensor is placed. The concentration and position of the trapped MD varies with the change in flow rate from 0.01-\u0000<inline-formula> <tex-math>$0.1 ~mu text{l}$ </tex-math></inline-formula>\u0000/min. Upon exposure to IR (Infrared) irradiation pulses, the sensor detects 0.33-0.21 nA current for 0-\u0000<inline-formula> <tex-math>$500 ~mu text{g}$ </tex-math></inline-formula>\u0000/ml concentration due to the pyroelectric effect and exhibits remarkable sensitivity (0.33 nA.ml/\u0000<inline-formula> <tex-math>$mu text{g}$ </tex-math></inline-formula>\u0000) and response time (\u0000<inline-formula> <tex-math>$ < 2text{s}$ </tex-math></inline-formula>\u0000). [2023-0218]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 2","pages":"127-129"},"PeriodicalIF":2.7,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139950742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents the first prototype of a novel threshold sensing system operating in the radiofrequency (RF) range, capable of passively detecting and recording instances of temperature violations with high sensitivity and without the need of DC-biased memory devices. The system comprises a microfabricated hafnium zirconium oxide (HZO) ferroelectric varactor, a microfabricated lithium niobate (LiNbO3) shear-horizontal (SH0) Lamb wave microacoustic resonator used as a temperature sensor, and an inductor. All components have been soldered onto a printed circuit board for testing and characterization. Through this threshold sensing system, we also provide the first demonstration of ferroelectric switching in a HZO varactor triggered exclusively by an RF signal without requiring any DC voltages. The findings reported in this paper offer a promising pathway for future RF passive tags leveraging micro- and nanosystems to implement a programmable threshold sensing functionality with high sensitivity and with embedded memory capabilities. [2023-0215]
{"title":"A Radiofrequency Threshold Temperature Sensor Using a Hf0.5Zr0.5O2 Device and a Microacoustic Piezoelectric Resonant Sensor","authors":"Onurcan Kaya;Luca Colombo;Pietro Simeoni;Benyamin Davaji;Matteo Rinaldi;Cristian Cassella","doi":"10.1109/JMEMS.2024.3364521","DOIUrl":"10.1109/JMEMS.2024.3364521","url":null,"abstract":"This article presents the first prototype of a novel threshold sensing system operating in the radiofrequency (RF) range, capable of passively detecting and recording instances of temperature violations with high sensitivity and without the need of DC-biased memory devices. The system comprises a microfabricated hafnium zirconium oxide (HZO) ferroelectric varactor, a microfabricated lithium niobate (LiNbO3) shear-horizontal (SH0) Lamb wave microacoustic resonator used as a temperature sensor, and an inductor. All components have been soldered onto a printed circuit board for testing and characterization. Through this threshold sensing system, we also provide the first demonstration of ferroelectric switching in a HZO varactor triggered exclusively by an RF signal without requiring any DC voltages. The findings reported in this paper offer a promising pathway for future RF passive tags leveraging micro- and nanosystems to implement a programmable threshold sensing functionality with high sensitivity and with embedded memory capabilities. [2023-0215]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 2","pages":"151-162"},"PeriodicalIF":2.7,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139951044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-22DOI: 10.1109/JMEMS.2024.3363622
Hengbo Zhu;Yun Cao;Wanli Ma;Xiaoyu Kong;Shenghong Lei;Haining Lu;Weirong Nie;Zhanwen Xi
Dynamic modeling is the basis for predicting the behavior of the electro-thermal actuator (ETA). Although the sequential decoupling method, often used in previous studies, has been able to model the dynamics of ETAs, most of them focused only on the ETAs themselves, and few considered the effects of end effectors. In this work, a dynamic multi-fields coupling model considering the effects of end effectors was developed. Due to the end effector, the dynamic model changes from a one-way coupled problem to a complex two-way coupled problem, limiting the commonly used sequential decoupling method. In order to solve the two-way coupled problem, a thermal microscope system was first employed to study the heat transfer characteristics between the ETA and the end effector at different thicknesses of the air gap. Subsequently, a combination of the Crank-Nicolson finite difference method and finite element method was employed to solve the problem numerically. It was eventually demonstrated by experiments that the presented dynamic model is an effective analytical technique to predict the dynamic behavior of the ETA with end effectors.
动态建模是预测电热致动器（ETA）行为的基础。虽然以往研究中经常使用的顺序解耦方法已经能够建立 ETA 的动态模型，但大多数研究只关注 ETA 本身，很少考虑终端效应器的影响。在这项工作中，我们建立了一个考虑到终端效应器影响的动态多场耦合模型。由于末端效应器的存在，动态模型从单向耦合问题变为复杂的双向耦合问题，从而限制了常用的顺序解耦方法。为了解决双向耦合问题，首先采用了热显微镜系统来研究不同气隙厚度下 ETA 和末端效应器之间的传热特性。随后，结合使用 Crank-Nicolson 有限差分法和有限元法对问题进行数值求解。实验最终证明，所提出的动态模型是预测带有末端效应器的 ETA 动态行为的有效分析技术。
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Pub Date : 2024-02-02DOI: 10.1109/JMEMS.2024.3350957
The IEEE Journal of Microelectromechanical Systems (JMEMS) Board of Editors greatly appreciates the support of those important people who, along with anonymous colleagues, contributed reviews for one or more articles processed by JMEMS during the year 2023 (from October 18, 2022 through December 31, 2023). Their contributions in time and expertise play an essential role in the ongoing development of archival results through the pages of JMEMS. Special thanks go to those reviewers who have excelled at their service and whom we recognize with the status of GOLD Reviewers.
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