Pub Date : 2025-03-11DOI: 10.1109/JMEMS.2025.3546280
Yuhu Xia;Biyun Ling;Xiaoyue Wang;Yaming Wu
This paper presents a quantitative analysis of mechanical cross-axis coupling in tip-tilt (TT) scanning of vertical comb-drive (VCD) micromirror in detail. In the proposed non-follow-up (NFU) TT VCD micromirror design, one set of vertical combs (VCs) is fixed on the wiring substrate, while the other VC set can rotate along with the gimbal, the springs, and the reflective mirror. Such design brings not only high fabrication feasibility but also convenience for driving signal fan-out of micromirror array (MMA). The fabrication process is adopted on a double-silicon-on-insulator (D-SOI) wafer and a hollow copper (Cu) through-silicon-via (TSV) wiring substrate through bulk silicon micromachining. Based on this, a mechanical cross-axis coupling model is developed by introducing mechanical cross-axis coupling factors and plugging the deflection-dependent VC capacitance expressions into TT scanning angle solution, in order to evaluate influence from VCD actuators and series springs of gimbaled scanning structure. The calculation indicates that inner-axis rotation has little influence on outer-axis rotation, while the opposite is in direct relation to the number of VC units that contribute to VC capacitance calculation. A comparison between calculation with measured results obtained from fabricated devices is also conducted, which shows a good agreement. Additionally, we have investigated the decoupling method of the proposed model to evaluate its capability of biaxial driving voltage estimation. Furthermore, to overcome the drawbacks of the NFU TT scanning structure, a simplified calibration methodology is proposed as the extended application of the proposed model, featuring both lowering calibration workload and guaranteeing TT scanning accuracy. [2024-0214]
{"title":"Study on Mechanical Cross-Axis Coupling for Non-Follow-Up Tip-Tilt Vertical Comb-Drive Micromirror","authors":"Yuhu Xia;Biyun Ling;Xiaoyue Wang;Yaming Wu","doi":"10.1109/JMEMS.2025.3546280","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3546280","url":null,"abstract":"This paper presents a quantitative analysis of mechanical cross-axis coupling in tip-tilt (TT) scanning of vertical comb-drive (VCD) micromirror in detail. In the proposed non-follow-up (NFU) TT VCD micromirror design, one set of vertical combs (VCs) is fixed on the wiring substrate, while the other VC set can rotate along with the gimbal, the springs, and the reflective mirror. Such design brings not only high fabrication feasibility but also convenience for driving signal fan-out of micromirror array (MMA). The fabrication process is adopted on a double-silicon-on-insulator (D-SOI) wafer and a hollow copper (Cu) through-silicon-via (TSV) wiring substrate through bulk silicon micromachining. Based on this, a mechanical cross-axis coupling model is developed by introducing mechanical cross-axis coupling factors and plugging the deflection-dependent VC capacitance expressions into TT scanning angle solution, in order to evaluate influence from VCD actuators and series springs of gimbaled scanning structure. The calculation indicates that inner-axis rotation has little influence on outer-axis rotation, while the opposite is in direct relation to the number of VC units that contribute to VC capacitance calculation. A comparison between calculation with measured results obtained from fabricated devices is also conducted, which shows a good agreement. Additionally, we have investigated the decoupling method of the proposed model to evaluate its capability of biaxial driving voltage estimation. Furthermore, to overcome the drawbacks of the NFU TT scanning structure, a simplified calibration methodology is proposed as the extended application of the proposed model, featuring both lowering calibration workload and guaranteeing TT scanning accuracy. [2024-0214]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"283-296"},"PeriodicalIF":2.5,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-09DOI: 10.1109/JMEMS.2025.3558897
Zhuoyue Zheng;Xinyu Wu;Yuan Wang;Huahuang Luo;Qingqing Ke;Chen Wang;Michael Kraft;Rui P. Martins;Pui In Mak
This work introduces a novel tunable piezoelectric MEMS microphone, featuring a fully clamped membrane and dual-sensing electrodes. The device achieves a baseline sensitivity of -39.31 dB, with tunability enabled by a DC tuning mechanism. The key innovations of this subject include: 1) a discrete electrode design enabling simultaneous tuning of sensitivity and resonant frequency while preserving acoustic sensing functionality; 2) utilizing the reverse piezoelectric effect to achieve large tunable ranges with minimal tuning voltages; and 3) a cost-effective performance tuning methodology that eliminates the need for structural modifications; 4) ascertain the tuning mechanism. Furthermore, a refined equivalent circuit model provides insights into the electromechanical behavior of the device, enabling the optimization of tunable microphones and acoustic transducers. Experimental results demonstrate the tuning ability successfully. The acoustic experiment shows that the output amplitude can be changed by up to 182.18% under ±0.5 V DC tuning under 1 kHz acoustic input. The electrical experiment reveals a maximum resonant frequency change of 6.85% with ±10 V DC. The proposed microphone is a promising candidate to be employed in many next-generation audio applications, such as adaptive voice systems, AI-driven speech recognition, and noise cancellation.[2025-0005]
{"title":"Toward a Tunable AlN-Based Piezoelectric MEMS Microphone: Design, Characterization, and Analysis","authors":"Zhuoyue Zheng;Xinyu Wu;Yuan Wang;Huahuang Luo;Qingqing Ke;Chen Wang;Michael Kraft;Rui P. Martins;Pui In Mak","doi":"10.1109/JMEMS.2025.3558897","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3558897","url":null,"abstract":"This work introduces a novel tunable piezoelectric MEMS microphone, featuring a fully clamped membrane and dual-sensing electrodes. The device achieves a baseline sensitivity of -39.31 dB, with tunability enabled by a DC tuning mechanism. The key innovations of this subject include: 1) a discrete electrode design enabling simultaneous tuning of sensitivity and resonant frequency while preserving acoustic sensing functionality; 2) utilizing the reverse piezoelectric effect to achieve large tunable ranges with minimal tuning voltages; and 3) a cost-effective performance tuning methodology that eliminates the need for structural modifications; 4) ascertain the tuning mechanism. Furthermore, a refined equivalent circuit model provides insights into the electromechanical behavior of the device, enabling the optimization of tunable microphones and acoustic transducers. Experimental results demonstrate the tuning ability successfully. The acoustic experiment shows that the output amplitude can be changed by up to 182.18% under ±0.5 V DC tuning under 1 kHz acoustic input. The electrical experiment reveals a maximum resonant frequency change of 6.85% with ±10 V DC. The proposed microphone is a promising candidate to be employed in many next-generation audio applications, such as adaptive voice systems, AI-driven speech recognition, and noise cancellation.[2025-0005]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 4","pages":"432-442"},"PeriodicalIF":3.1,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144757681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-06DOI: 10.1109/JMEMS.2025.3545087
Hasan Albatayneh;Mohammad Matahen;Aaron Kishlock;Danling Wang;Mohammad I. Younis
We present a new approach to enhance the sensitivity of resistive sensors and enable threshold switching that can be used for actuation, providing a simple binary readout method. The concept is based on electrically coupling a resistive sensor with a resonant MEMS structure. Results are demonstrated for two case studies involving a resistive temperature sensor and a chemiresistive humidity sensor based on the nanocomposite material Ti3C2Tx. By tracking the resonance frequency shifts of the coupled microstructure operated near buckling, the results show significant sensitivity enhancement (more than 5-6 times) for both the temperature and humidity sensors compared to directly monitoring the resistance changes of the resistive sensors. Furthermore, results are shown for the conversion of the resonator into a tunable electrical switch based on the nonlinear pull-in phenomenon. Such a switch can simplify sensor-actuator systems and can be used as a simple binary readout method for resistive sensors.[2024-0216]
{"title":"A MEMS Resonator Coupled With a Resistive Sensor for Improved Sensing and Actuation","authors":"Hasan Albatayneh;Mohammad Matahen;Aaron Kishlock;Danling Wang;Mohammad I. Younis","doi":"10.1109/JMEMS.2025.3545087","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3545087","url":null,"abstract":"We present a new approach to enhance the sensitivity of resistive sensors and enable threshold switching that can be used for actuation, providing a simple binary readout method. The concept is based on electrically coupling a resistive sensor with a resonant MEMS structure. Results are demonstrated for two case studies involving a resistive temperature sensor and a chemiresistive humidity sensor based on the nanocomposite material Ti3C2Tx. By tracking the resonance frequency shifts of the coupled microstructure operated near buckling, the results show significant sensitivity enhancement (more than 5-6 times) for both the temperature and humidity sensors compared to directly monitoring the resistance changes of the resistive sensors. Furthermore, results are shown for the conversion of the resonator into a tunable electrical switch based on the nonlinear pull-in phenomenon. Such a switch can simplify sensor-actuator systems and can be used as a simple binary readout method for resistive sensors.[2024-0216]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"297-305"},"PeriodicalIF":2.5,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-05DOI: 10.1109/JMEMS.2025.3543201
Cedric Shaskey;Amun Jarzembski;Milo Birdwell;Keunhan Park
This work presents the design, fabrication, and characterization of innovative suspended microcalorimeters tailored for nanoscale heat transfer studies. These devices address the critical trade-off between thermal resistance and stiffness-key factors for achieving nanowatt power resolution while withstanding near-contact forces. By employing a novel three-dimensional U-beam structure, the microcalorimeter achieves a thermal resistance of $(1.555 pm 0.002)times 10^{6}$ K/W and a stiffness of 52.5 N/m. This design enables a power resolution of 8.4 nW in DC mode, making it highly suitable for exploring nanoscale heat transfer phenomena across sub-nanometer gaps and atomic junctions. The performance of these devices opens new experimental possibilities in the field of heat transfer at the nanoscale. [2024-0194]
{"title":"Design, Fabrication, and Characterization of High-Stiffness Suspended Microcalorimeters With Nanowatt Power Resolution","authors":"Cedric Shaskey;Amun Jarzembski;Milo Birdwell;Keunhan Park","doi":"10.1109/JMEMS.2025.3543201","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3543201","url":null,"abstract":"This work presents the design, fabrication, and characterization of innovative suspended microcalorimeters tailored for nanoscale heat transfer studies. These devices address the critical trade-off between thermal resistance and stiffness-key factors for achieving nanowatt power resolution while withstanding near-contact forces. By employing a novel three-dimensional U-beam structure, the microcalorimeter achieves a thermal resistance of <inline-formula> <tex-math>$(1.555 pm 0.002)times 10^{6}$ </tex-math></inline-formula> K/W and a stiffness of 52.5 N/m. This design enables a power resolution of 8.4 nW in DC mode, making it highly suitable for exploring nanoscale heat transfer phenomena across sub-nanometer gaps and atomic junctions. The performance of these devices opens new experimental possibilities in the field of heat transfer at the nanoscale. [2024-0194]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"268-275"},"PeriodicalIF":2.5,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-27DOI: 10.1109/JMEMS.2025.3543166
Longqi Ran;Wu Zhou;Jiangbo He;Jiahao Wu;Yan Wang;Xuhui Gong
The fracture failure of dual-axis micromirrors under the AEC-Q100 qualification test could not be mitigated by structural designs alone due to the need for compatibility in bending and torsional stiffness. To address this, a passive MEMS vibration isolator was proposed to protect the micromirrors within a broad frequency range of 20 Hz to 1200 Hz, unlike conventional designs limited to a fixed frequency. The proposed method was based on a two-degree-of-freedom (DOF) micromirror-isolator system, in contrast to the single-DOF systems employed in existing methods. The isolator’s stiffness was matched to the micromirror’s stiffness to maximize the mirror plane’s movement, and an air damping mechanism was incorporated using a $20~mu $ m gap to control the dynamic response time. The designed isolator was fabricated using a novel SOI-on-glass process and tested on a high-precision vibration shaker equipped with a laser Doppler vibrometer. Results showed that the proposed isolator attenuated vibration amplitude by 25.55 dB, closely aligning with the design value of 24.89 dB. Additionally, an automotive-grade vibration test demonstrated successful isolation under a 50g vibration within the 20 Hz to 1200 Hz frequency range, without introducing parasitic modes that could disrupt the micromirror’s operational modes.[2024-0220]
{"title":"MEMS Air-Damped Isolator for Dual-Axis Micromirrors: Broad-Range Frequency Vibration Isolation","authors":"Longqi Ran;Wu Zhou;Jiangbo He;Jiahao Wu;Yan Wang;Xuhui Gong","doi":"10.1109/JMEMS.2025.3543166","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3543166","url":null,"abstract":"The fracture failure of dual-axis micromirrors under the AEC-Q100 qualification test could not be mitigated by structural designs alone due to the need for compatibility in bending and torsional stiffness. To address this, a passive MEMS vibration isolator was proposed to protect the micromirrors within a broad frequency range of 20 Hz to 1200 Hz, unlike conventional designs limited to a fixed frequency. The proposed method was based on a two-degree-of-freedom (DOF) micromirror-isolator system, in contrast to the single-DOF systems employed in existing methods. The isolator’s stiffness was matched to the micromirror’s stiffness to maximize the mirror plane’s movement, and an air damping mechanism was incorporated using a <inline-formula> <tex-math>$20~mu $ </tex-math></inline-formula>m gap to control the dynamic response time. The designed isolator was fabricated using a novel SOI-on-glass process and tested on a high-precision vibration shaker equipped with a laser Doppler vibrometer. Results showed that the proposed isolator attenuated vibration amplitude by 25.55 dB, closely aligning with the design value of 24.89 dB. Additionally, an automotive-grade vibration test demonstrated successful isolation under a 50g vibration within the 20 Hz to 1200 Hz frequency range, without introducing parasitic modes that could disrupt the micromirror’s operational modes.[2024-0220]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 3","pages":"260-267"},"PeriodicalIF":2.5,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10907265","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144206211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/JMEMS.2025.3528522
Yang Li;Jiawei Li;Tao Wu
This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1-$mu $ m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection ($Gamma $ ) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency (${f} _{c}$ ) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length ($L_{g}$ ) ranging from 50 to $300~mu $ m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB$cdot $ MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]
{"title":"Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers","authors":"Yang Li;Jiawei Li;Tao Wu","doi":"10.1109/JMEMS.2025.3528522","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3528522","url":null,"abstract":"This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection (<inline-formula> <tex-math>$Gamma $ </tex-math></inline-formula>) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency (<inline-formula> <tex-math>${f} _{c}$ </tex-math></inline-formula>) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length (<inline-formula> <tex-math>$L_{g}$ </tex-math></inline-formula>) ranging from 50 to <inline-formula> <tex-math>$300~mu $ </tex-math></inline-formula>m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"194-203"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/JMEMS.2025.3542363
Xu Zhao;Rossiny Beaucejour;Xingyu Du;Abhay Kochhar;Mojtaba Hodjat-Shamami;Craig Moe;Ramakrishna Vetury;Roy H. Olsson
This work reports aluminum scandium nitride (Al$_{mathrm {1-x}}$ ScxN/AlScN) (x =0.3/Al0.7Sc0.3N) Lamb wave resonators (LWR) operating in length extensional (LE), width extensional (WE), and radial extensional (RE) modes. COMSOL Multiphysics and experimental measurements show that the RE mode achieves a much higher electromechanical coupling, $k_{t}^{2}$ , when compared to the more traditionally utilized LE and WE modes. The higher ${k} _{t}^{2}$ is due to the constructive addition of the $d_{31}$ and $d_{32}$ piezoelectric coefficients due to the RE mode shape. Experimentally, the RE mode resonator achieved a $k_{t}^{2}$ of 14.1%, which was much larger than the $k_{t}^{2}$ of 9.1% and 4.8% measured for the WE and LE mode devices fabricated on the same wafer. The RE mode achieves a high $Q_{p}$ of 1302 measured in air yielding a figure-of-merit (FOM $= k_{t}^{2}Q_{p}$ ) of 157. Based on the high $k_{t}^{2}$ and FOM, Al0.7Sc0.3N-based RE resonators show potential for applications in piezoelectric microelectromechanical filters and oscillators. [2024-0231]
{"title":"High Electromechanical Coupling Radial Extension Mode Resonators Realized in Al0.7Sc0.3N","authors":"Xu Zhao;Rossiny Beaucejour;Xingyu Du;Abhay Kochhar;Mojtaba Hodjat-Shamami;Craig Moe;Ramakrishna Vetury;Roy H. Olsson","doi":"10.1109/JMEMS.2025.3542363","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3542363","url":null,"abstract":"This work reports aluminum scandium nitride (Al<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>ScxN/AlScN) (x =0.3/Al0.7Sc0.3N) Lamb wave resonators (LWR) operating in length extensional (LE), width extensional (WE), and radial extensional (RE) modes. COMSOL Multiphysics and experimental measurements show that the RE mode achieves a much higher electromechanical coupling, <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula>, when compared to the more traditionally utilized LE and WE modes. The higher <inline-formula> <tex-math>${k} _{t}^{2}$ </tex-math></inline-formula> is due to the constructive addition of the <inline-formula> <tex-math>$d_{31}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$d_{32}$ </tex-math></inline-formula> piezoelectric coefficients due to the RE mode shape. Experimentally, the RE mode resonator achieved a <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> of 14.1%, which was much larger than the <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> of 9.1% and 4.8% measured for the WE and LE mode devices fabricated on the same wafer. The RE mode achieves a high <inline-formula> <tex-math>$Q_{p}$ </tex-math></inline-formula> of 1302 measured in air yielding a figure-of-merit (FOM <inline-formula> <tex-math>$= k_{t}^{2}Q_{p}$ </tex-math></inline-formula>) of 157. Based on the high <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> and FOM, Al0.7Sc0.3N-based RE resonators show potential for applications in piezoelectric microelectromechanical filters and oscillators. [2024-0231]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"113-115"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/JMEMS.2025.3541581
Bowen Wang;Kunfeng Wang;Zhenxiang Qi;Zhaoyang Zhai;Zheng Wang;Xudong Zou
This paper investigates the dynamic characteristics of the mode-localized resonant accelerometer (ML-RXL) both in small-signal and large-signal models. The analytical model of ML-RXL bandwidth at various amplitude ratio (AR) operating points (OPs) was derived and validated through simulations and experiments. For the small-signal model, the OP with larger AR results in a further broadening of the ML-RXL’s bandwidth. Specifically, when AR is from 1 to 4, the effective bandwidth is expanded from 46Hz to 152Hz. For large-signal model, this study reveals the emergence of multiple harmonic peaks in the AR output response curve, which become more pronounced as the intensity of the dynamic acceleration signal increases at a given OP. The findings indicate that the bandwidth of ML-RXL is constrained by mode frequency difference and dynamic acceleration signal intensity, and it can be expanded by adjusting the operating point. [2024-0209]
{"title":"The Dynamic Characteristics of a Mode-Localized Resonant Accelerometer","authors":"Bowen Wang;Kunfeng Wang;Zhenxiang Qi;Zhaoyang Zhai;Zheng Wang;Xudong Zou","doi":"10.1109/JMEMS.2025.3541581","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3541581","url":null,"abstract":"This paper investigates the dynamic characteristics of the mode-localized resonant accelerometer (ML-RXL) both in small-signal and large-signal models. The analytical model of ML-RXL bandwidth at various amplitude ratio (AR) operating points (OPs) was derived and validated through simulations and experiments. For the small-signal model, the OP with larger AR results in a further broadening of the ML-RXL’s bandwidth. Specifically, when AR is from 1 to 4, the effective bandwidth is expanded from 46Hz to 152Hz. For large-signal model, this study reveals the emergence of multiple harmonic peaks in the AR output response curve, which become more pronounced as the intensity of the dynamic acceleration signal increases at a given OP. The findings indicate that the bandwidth of ML-RXL is constrained by mode frequency difference and dynamic acceleration signal intensity, and it can be expanded by adjusting the operating point. [2024-0209]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"222-230"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]
{"title":"K-Band LiNbO₃ A3 Lamb-Wave Resonators With Through-Holes","authors":"Shu-Mao Wu;Hao Yan;Chen-Bei Hao;Zhen-Hui Qin;Si-Yuan Yu;Yan-Feng Chen","doi":"10.1109/JMEMS.2025.3540960","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3540960","url":null,"abstract":"Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"164-173"},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-13DOI: 10.1109/JMEMS.2025.3540417
Xiaoyu Kong;Yun Cao;Shenghong Lei;Hengbo Zhu;Weirong Nie;Zhanwen Xi
Microelectrothermal actuators are widely used in various microelectromechanical systems (MEMS), but challenges related to energy consumption and response time persist, especially in energy-constrained systems. This paper presents an innovative approach to achieving low-energy consumption in microelectrothermal actuators through capacitive discharge excitation. A theoretical model is developed to analyze the actuator’s displacement, temperature, and response time as functions of applied voltage and capacitance. Experimental results validate the theoretical predictions, showing that with an applied voltage of 56 V and a capacitance of 0.1 mF, the actuator achieves a displacement of 160 $mu $ m within 7.65 ms, consuming only 0.157 J of energy. Compared to traditional constant voltage excitation (24 V), the proposed capacitive discharge excitation method reduces energy consumption by 21.1% and shortens the response time by 81.4%. Additionally, a matching strategy for selecting capacitors is proposed, considering the limitations of available capacitor specifications. The study highlights that higher applied voltage and lower capacitance lead to faster response times and reduced energy consumption, offering a promising solution for energy-efficient MEMS applications. [2024-0225]
{"title":"Low-Energy Consumption Actuation for Microelectrothermal Actuators via Capacitive Discharge Excitation","authors":"Xiaoyu Kong;Yun Cao;Shenghong Lei;Hengbo Zhu;Weirong Nie;Zhanwen Xi","doi":"10.1109/JMEMS.2025.3540417","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3540417","url":null,"abstract":"Microelectrothermal actuators are widely used in various microelectromechanical systems (MEMS), but challenges related to energy consumption and response time persist, especially in energy-constrained systems. This paper presents an innovative approach to achieving low-energy consumption in microelectrothermal actuators through capacitive discharge excitation. A theoretical model is developed to analyze the actuator’s displacement, temperature, and response time as functions of applied voltage and capacitance. Experimental results validate the theoretical predictions, showing that with an applied voltage of 56 V and a capacitance of 0.1 mF, the actuator achieves a displacement of 160 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m within 7.65 ms, consuming only 0.157 J of energy. Compared to traditional constant voltage excitation (24 V), the proposed capacitive discharge excitation method reduces energy consumption by 21.1% and shortens the response time by 81.4%. Additionally, a matching strategy for selecting capacitors is proposed, considering the limitations of available capacitor specifications. The study highlights that higher applied voltage and lower capacitance lead to faster response times and reduced energy consumption, offering a promising solution for energy-efficient MEMS applications. [2024-0225]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"184-193"},"PeriodicalIF":2.5,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143801070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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