首页 > 最新文献

2016 International Conference on Integrated Circuits and Microsystems (ICICM)最新文献

英文 中文
Innovative method for better utilization of emulation hardware /FPGA resources 创新的方法,更好地利用仿真硬件/FPGA资源
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813599
Prateek Sikka
With shrinking time to market for VLSI industry, there is a constant need for hardware - software codevelopment in the VLSI design flow. FPGAs and Emulation systems offer a great help to verification and validation engineers to achieve the same in the VLSI design flow. Further, to enable design verification engineers to create close to real chip scenarios and interface with external peripherals like UART, JTAG, protocol and memory solutions further increases the need for FPGA or Emulation builds earlier in the design cycle. For accelerating smaller designs like IPs, FPGAs could suffice but for running complex SoCs, multi device FPGA architectures or Emulation systems might be needed. However, these acceleration hardware resources are expensive and it is important to make efficient use of them. This invention proposes a methodology for better area utilization of emulation/FPGA resources for a verification scenario/test by creating multiple instances of the design in a single test bench environment. We are able to see 2x-6x improvement in area and verification runtime by using this methodology depending on the type of design and its size.
随着超大规模集成电路行业上市时间的缩短,在超大规模集成电路设计流程中不断需要硬件和软件协同开发。fpga和仿真系统为验证和验证工程师在VLSI设计流程中实现相同的目标提供了很大的帮助。此外,为了使设计验证工程师能够创建接近真实的芯片场景并与外部外设(如UART, JTAG,协议和内存解决方案)接口,进一步增加了在设计周期早期构建FPGA或仿真的需求。对于加速像ip这样的小型设计,FPGA就足够了,但对于运行复杂的soc,可能需要多设备FPGA架构或仿真系统。然而,这些加速硬件资源是昂贵的,重要的是要有效地利用它们。本发明提出了一种方法,通过在单个测试台环境中创建设计的多个实例,更好地利用仿真/FPGA资源进行验证场景/测试。根据设计的类型和大小,通过使用这种方法,我们可以在面积和验证运行时间上看到2 -6倍的改进。
{"title":"Innovative method for better utilization of emulation hardware /FPGA resources","authors":"Prateek Sikka","doi":"10.1109/ICAM.2016.7813599","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813599","url":null,"abstract":"With shrinking time to market for VLSI industry, there is a constant need for hardware - software codevelopment in the VLSI design flow. FPGAs and Emulation systems offer a great help to verification and validation engineers to achieve the same in the VLSI design flow. Further, to enable design verification engineers to create close to real chip scenarios and interface with external peripherals like UART, JTAG, protocol and memory solutions further increases the need for FPGA or Emulation builds earlier in the design cycle. For accelerating smaller designs like IPs, FPGAs could suffice but for running complex SoCs, multi device FPGA architectures or Emulation systems might be needed. However, these acceleration hardware resources are expensive and it is important to make efficient use of them. This invention proposes a methodology for better area utilization of emulation/FPGA resources for a verification scenario/test by creating multiple instances of the design in a single test bench environment. We are able to see 2x-6x improvement in area and verification runtime by using this methodology depending on the type of design and its size.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122087448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A cost-effective pre-bond functional test architecture for 3D SoCs 一种具有成本效益的3D soc预粘合功能测试架构
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813601
Xiangwei Huang, Pu Pang, Xiaoyao Liang, Li Jiang
We proposed a novel pre-bond functional test architecture for core-level partitioned 3D SoCs. In this test architecture, a new test access mechanism is built by probing functional Through Silicon Vias (TSVs) and by linking functional TSVs to all pins of IP cores under test. In order to reduce the Design-for-Test (DfT) cost, we propose a novel scheme to share the functional TSVs among pins of IP cores and reuse wires which connect pins to the same functional TSVs. Experimental results based on the MCNC benchmarks circuits demonstrate the feasibility and effectiveness of the DfT optimization methods.
我们提出了一种新的核级分区3D soc键前功能测试架构。在该测试架构中,通过探测功能性通硅通孔(tsv)并将功能性tsv连接到被测IP核的所有引脚,建立了一种新的测试访问机制。为了降低测试设计(Design-for-Test, DfT)成本,我们提出了一种新的方案,在IP核的引脚之间共享功能tsv,并重用连接引脚到相同功能tsv的导线。基于MCNC基准电路的实验结果验证了DfT优化方法的可行性和有效性。
{"title":"A cost-effective pre-bond functional test architecture for 3D SoCs","authors":"Xiangwei Huang, Pu Pang, Xiaoyao Liang, Li Jiang","doi":"10.1109/ICAM.2016.7813601","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813601","url":null,"abstract":"We proposed a novel pre-bond functional test architecture for core-level partitioned 3D SoCs. In this test architecture, a new test access mechanism is built by probing functional Through Silicon Vias (TSVs) and by linking functional TSVs to all pins of IP cores under test. In order to reduce the Design-for-Test (DfT) cost, we propose a novel scheme to share the functional TSVs among pins of IP cores and reuse wires which connect pins to the same functional TSVs. Experimental results based on the MCNC benchmarks circuits demonstrate the feasibility and effectiveness of the DfT optimization methods.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122299340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Band calibration of joint dual VCOs covering wide frequency range 覆盖宽频率范围的联合双压控振荡器的波段校正
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813565
T. Li, RuiTao Zhang
A band calibration algorithm for wide frequency coverage dual VCOs (Voltage-Controlled Oscillator) is presented. A high frequency (9.5 GHz∼12.5GHz) and a low frequency (6 GHz∼9.5GHz) VCO are integrated in PLL circuit for high-speed serial data transmission applications. Algorithm details are presented with calibration precision and time expenditure discussed. This algorithm has been successfully implemented in 55nm CMOS technology.
提出了一种宽频域双vco(压控振荡器)频段标定算法。在锁相环电路中集成了高频(9.5 GHz ~ 12.5GHz)和低频(6 GHz ~ 9.5GHz)压控振荡器,用于高速串行数据传输应用。给出了算法细节,讨论了标定精度和时间开销。该算法已在55nm CMOS工艺上成功实现。
{"title":"Band calibration of joint dual VCOs covering wide frequency range","authors":"T. Li, RuiTao Zhang","doi":"10.1109/ICAM.2016.7813565","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813565","url":null,"abstract":"A band calibration algorithm for wide frequency coverage dual VCOs (Voltage-Controlled Oscillator) is presented. A high frequency (9.5 GHz∼12.5GHz) and a low frequency (6 GHz∼9.5GHz) VCO are integrated in PLL circuit for high-speed serial data transmission applications. Algorithm details are presented with calibration precision and time expenditure discussed. This algorithm has been successfully implemented in 55nm CMOS technology.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133570993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of pulse parameters on the damage effect of the GaAs PHEMT caused by the repetition pulse 脉冲参数对重复脉冲对GaAs PHEMT损伤效果的影响
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813587
Xiaowen Xi, C. Chai, Yin-Tang Yang, Yang Liu
This paper investigates the influence of the pulse width, pulse period, and duty ratio on the damage effect of the GaAs pseudomorphic high electron mobility transistor (PHEMT) under the injection of the repletion pulse. First, a damage model is established and verified. Then, based on this model the influence of pulse parameters on the damage effect of the GaAs PHEMT is analyzed. It can be seen that the pulse parameters can significantly affect the damage effect of the device. The increase of the pulse width can aid the damage of the device by increasing the heat of the device obtained by the signal. The influence of the pulse period depends on its variation caused by the change of the pulse width or the pulse interval. When the variation results from the change of the pulse width, the pulse period is inversely proportional to the damage time of the device. When the variation results from the change of the pulse interval, the pulse period is directly proportional to the damage time. The duty ratio is inversely proportional to the damage time of the device by affecting the heat production and dissipation simultaneously. It is found that there is a pulse period and duty ratio safe thresholds. When the injected signal is in the threshold range, the device is safe and has not potential damage under the effect of the repetition pulse.
研究了脉冲宽度、脉冲周期和占空比对充注脉冲下GaAs伪晶高电子迁移率晶体管(PHEMT)损伤效应的影响。首先,建立并验证了损伤模型。在此基础上,分析了脉冲参数对砷化镓PHEMT损伤效果的影响。可以看出,脉冲参数对器件的损伤效果有显著影响。脉冲宽度的增加可以通过增加信号所获得的器件的热量来帮助器件的损坏。脉冲周期的影响取决于脉冲宽度或脉冲间隔的变化引起的脉冲周期的变化。当这种变化是由脉冲宽度的变化引起时,脉冲周期与器件的损伤时间成反比。当变化是由脉冲间隔变化引起时,脉冲周期与损伤时间成正比。占空比与器件的损坏时间成反比,同时影响器件的发热和散热。发现存在脉冲周期和占空比安全阈值。当注入信号在阈值范围内时,设备在重复脉冲的作用下是安全的,没有潜在的损坏。
{"title":"Influence of pulse parameters on the damage effect of the GaAs PHEMT caused by the repetition pulse","authors":"Xiaowen Xi, C. Chai, Yin-Tang Yang, Yang Liu","doi":"10.1109/ICAM.2016.7813587","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813587","url":null,"abstract":"This paper investigates the influence of the pulse width, pulse period, and duty ratio on the damage effect of the GaAs pseudomorphic high electron mobility transistor (PHEMT) under the injection of the repletion pulse. First, a damage model is established and verified. Then, based on this model the influence of pulse parameters on the damage effect of the GaAs PHEMT is analyzed. It can be seen that the pulse parameters can significantly affect the damage effect of the device. The increase of the pulse width can aid the damage of the device by increasing the heat of the device obtained by the signal. The influence of the pulse period depends on its variation caused by the change of the pulse width or the pulse interval. When the variation results from the change of the pulse width, the pulse period is inversely proportional to the damage time of the device. When the variation results from the change of the pulse interval, the pulse period is directly proportional to the damage time. The duty ratio is inversely proportional to the damage time of the device by affecting the heat production and dissipation simultaneously. It is found that there is a pulse period and duty ratio safe thresholds. When the injected signal is in the threshold range, the device is safe and has not potential damage under the effect of the repetition pulse.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"211 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123625287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research of RCS of passive UHF RFID tag 无源超高频RFID标签的RCS研究
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813621
Yu Fang, Tang Bin
The radio frequency identification (RFID) technology has been intensively studied in different frequency bands and widely deployed across various applications. In this paper, we present a new way to observe the RCS of backscattering RFID tags. The new method obtains the relationship not only between RCS and aspect angle, between RCS and frequency, but also between RCS and the size of antenna. A tag antenna with rectangular thin flat plate specifically designed for working in the ultra-high-frequency (UHF) band is used to validate the method. The numeric results show the validity of the new method which is valuable to help the design of RFID tags.
射频识别(RFID)技术在不同的频段上得到了深入的研究,并在各种应用中得到了广泛的应用。本文提出了一种观察后向散射RFID标签RCS的新方法。该方法不仅得到了RCS与向角、RCS与频率以及RCS与天线尺寸的关系。采用一种专门设计用于超高频(UHF)频段的矩形薄板标签天线对该方法进行了验证。数值结果表明了该方法的有效性,对RFID标签的设计具有一定的指导意义。
{"title":"Research of RCS of passive UHF RFID tag","authors":"Yu Fang, Tang Bin","doi":"10.1109/ICAM.2016.7813621","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813621","url":null,"abstract":"The radio frequency identification (RFID) technology has been intensively studied in different frequency bands and widely deployed across various applications. In this paper, we present a new way to observe the RCS of backscattering RFID tags. The new method obtains the relationship not only between RCS and aspect angle, between RCS and frequency, but also between RCS and the size of antenna. A tag antenna with rectangular thin flat plate specifically designed for working in the ultra-high-frequency (UHF) band is used to validate the method. The numeric results show the validity of the new method which is valuable to help the design of RFID tags.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"181 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123774186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and implementation of Ku-band frequency synthesizer ku波段频率合成器的设计与实现
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813570
Huaizu Wang, Dechun Guo, Li Wang
The design scheme and implementation of a PLL stepped-frequency source is herein introduced. The PLL's phase noise is first discussed. Combined with basic principles and operating characteristic of HMC703, a design is next given in Ku-band, which utilizes the external VCO chip to form the PLL. Parameters of the loop filter and the phase noise simulations are provided by HITTITE PLL Design. Through debugging the hardware circuits and writing the signal controlling program, the testing results of the real circuits controlled by FPGA finally shows the good performance in phase noise and spurious suppression.
介绍了一种锁相环阶跃频率源的设计方案和实现方法。首先讨论了锁相环的相位噪声。结合HMC703的基本原理和工作特点,给出了一种利用外接压控振荡器构成锁相环的ku波段设计方案。环路滤波器参数和相位噪声仿真由HITTITE PLL Design提供。通过对硬件电路的调试和编写信号控制程序,最终对FPGA控制的实际电路进行了测试,结果表明该电路在相位噪声和杂散抑制方面具有良好的性能。
{"title":"Design and implementation of Ku-band frequency synthesizer","authors":"Huaizu Wang, Dechun Guo, Li Wang","doi":"10.1109/ICAM.2016.7813570","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813570","url":null,"abstract":"The design scheme and implementation of a PLL stepped-frequency source is herein introduced. The PLL's phase noise is first discussed. Combined with basic principles and operating characteristic of HMC703, a design is next given in Ku-band, which utilizes the external VCO chip to form the PLL. Parameters of the loop filter and the phase noise simulations are provided by HITTITE PLL Design. Through debugging the hardware circuits and writing the signal controlling program, the testing results of the real circuits controlled by FPGA finally shows the good performance in phase noise and spurious suppression.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125467050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A monolithic UHF RFID transceiver for mobile UHF RFID readers 用于移动UHF RFID阅读器的单片UHF RFID收发器
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813583
Kun Wang, Changchun Zhang, Ying Zhang, Xincun Ji, Yi Zhang, Fengbo Yuan, Yu-feng Guo
According to the protocol of ISO/IEC 18000-6C, a monolithic UHF RFID transceiver is designed, in a standard 0.18gm RF CMOS process, in which a receiver, a transmitter and a frequency synthesizer are integrated. The direct-conversion receiver consists of a LNA, down-conversion mixers, DCOCs, LPFs and PGAs. A double-mode LNA is employed to meet the different requirements from listen and talk modes in the receiver. The direct-conversion transmitter is composed of a DA, up-conversion mixers, LPFs and PGAs, which supports three kinds of modulation, including DSB-ASK, SSB-ASK and PR-ASK, for the reader-to-tag communications. The ∑-Δ fractional-N frequency synthesizer is employed to produce high-quality I/Q local clocks for both the transmitter and the receiver. Post-simulation results show that, from a single power supply of 1.8V, a receiver sensitivity of −88dBm in listen mode, a receiver linearity (P1dB) of −2dBm in talk mode, a transmitter output power of 4.8dBm are achieved for the transceiver.
根据ISO/IEC 18000-6C标准,采用0.18gm标准射频CMOS工艺,设计了一个集成了接收机、发射机和频率合成器的单片UHF RFID收发器。直接转换接收器由LNA、下转换混频器、dcoc、lpf和pga组成。采用双模LNA来满足接收机听、说模式的不同要求。直接转换发射机由DA、上转换混频器、lpf和PGAs组成,支持三种调制,包括DSB-ASK、SSB-ASK和PR-ASK,用于阅读器到标签的通信。采用∑-Δ分数n频率合成器为发送端和接收端产生高质量的I/Q本地时钟。仿真结果表明,在单电源1.8V的情况下,接收灵敏度为- 88dBm,接收线性度(P1dB)为- 2dBm,收发器输出功率为4.8dBm。
{"title":"A monolithic UHF RFID transceiver for mobile UHF RFID readers","authors":"Kun Wang, Changchun Zhang, Ying Zhang, Xincun Ji, Yi Zhang, Fengbo Yuan, Yu-feng Guo","doi":"10.1109/ICAM.2016.7813583","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813583","url":null,"abstract":"According to the protocol of ISO/IEC 18000-6C, a monolithic UHF RFID transceiver is designed, in a standard 0.18gm RF CMOS process, in which a receiver, a transmitter and a frequency synthesizer are integrated. The direct-conversion receiver consists of a LNA, down-conversion mixers, DCOCs, LPFs and PGAs. A double-mode LNA is employed to meet the different requirements from listen and talk modes in the receiver. The direct-conversion transmitter is composed of a DA, up-conversion mixers, LPFs and PGAs, which supports three kinds of modulation, including DSB-ASK, SSB-ASK and PR-ASK, for the reader-to-tag communications. The ∑-Δ fractional-N frequency synthesizer is employed to produce high-quality I/Q local clocks for both the transmitter and the receiver. Post-simulation results show that, from a single power supply of 1.8V, a receiver sensitivity of −88dBm in listen mode, a receiver linearity (P1dB) of −2dBm in talk mode, a transmitter output power of 4.8dBm are achieved for the transceiver.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124457592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An accelerated life evaluation method of microsystems using temperature and vibration stresses 基于温度和振动应力的微系统加速寿命评估方法
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813606
Shen Zhong-Hong, Jia Chun-xu
An accelerated life assessment method of microsystems products which consisted of mechanical and electrical components was studied in this paper. The temperature and vibration were chosen to be accelerated life stress according to the research result about the main failure factors of Microsystems. The way using stepwise tests to obtain the accelerated stress limits of temperature and vibration was researched. And how to get the accelerated life model under temperature and vibration stress integrated was also discussed, which gave a guideline of life evaluation of Microsystems.
研究了由机电元件组成的微系统产品的加速寿命评估方法。根据对微系统主要失效因素的研究结果,选择温度和振动作为加速寿命应力。研究了采用逐步试验法获得温度和振动加速应力极限的方法。并讨论了如何建立温度和振动应力综合作用下的加速寿命模型,为微系统的寿命评估提供了指导。
{"title":"An accelerated life evaluation method of microsystems using temperature and vibration stresses","authors":"Shen Zhong-Hong, Jia Chun-xu","doi":"10.1109/ICAM.2016.7813606","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813606","url":null,"abstract":"An accelerated life assessment method of microsystems products which consisted of mechanical and electrical components was studied in this paper. The temperature and vibration were chosen to be accelerated life stress according to the research result about the main failure factors of Microsystems. The way using stepwise tests to obtain the accelerated stress limits of temperature and vibration was researched. And how to get the accelerated life model under temperature and vibration stress integrated was also discussed, which gave a guideline of life evaluation of Microsystems.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124476649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective adaptive cooperative design with outdated feedback 具有过时反馈的选择性自适应协同设计
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813600
Lili Guo, Yang Wang
In this paper, a Selective Adaptive Cooperative scheme based on the adaptive cooperative system is proposed to improve the system performance, which is scheduled through combining multilevel adaptive modulation (AM) at the physical layer with truncated automatic repeat request (ARQ) protocol at the data link layer. This paper derives the closedform expressions of the spectral efficiency and outage probability for the Selective adaptive cooperative scheme. It shows by simulation that the proposed system has better performance than the original adaptive cooperative system. Under outdated feedback, we also analyze the impact of the retransmission number, delay-time and the number of cooperative users on the performance of the proposed system.
本文提出了一种基于自适应协作系统的选择性自适应协作方案,该方案将物理层的多电平自适应调制(AM)与数据链路层的截断自动重复请求(ARQ)协议相结合进行调度,以提高系统的性能。导出了选择性自适应协同方案的频谱效率和中断概率的封闭表达式。仿真结果表明,该系统比原自适应协作系统具有更好的性能。在过时反馈的情况下,我们还分析了重传次数、延迟时间和合作用户数量对系统性能的影响。
{"title":"Selective adaptive cooperative design with outdated feedback","authors":"Lili Guo, Yang Wang","doi":"10.1109/ICAM.2016.7813600","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813600","url":null,"abstract":"In this paper, a Selective Adaptive Cooperative scheme based on the adaptive cooperative system is proposed to improve the system performance, which is scheduled through combining multilevel adaptive modulation (AM) at the physical layer with truncated automatic repeat request (ARQ) protocol at the data link layer. This paper derives the closedform expressions of the spectral efficiency and outage probability for the Selective adaptive cooperative scheme. It shows by simulation that the proposed system has better performance than the original adaptive cooperative system. Under outdated feedback, we also analyze the impact of the retransmission number, delay-time and the number of cooperative users on the performance of the proposed system.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131388913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel method of intrinsic parameters extraction for RF LDMOS transistors 一种射频LDMOS晶体管本征参数提取新方法
Pub Date : 2016-11-01 DOI: 10.1109/ICAM.2016.7813574
Lijuan Yin, Helun Song
A novel method of intrinsic parameters extraction for RF LDMOS transistors is proposed in this paper. This method uses the relationship of the two-port parameters between Cold-FET and Hot-FET to extract the intrinsic parameters directly without extracting the extrinsic parameters for RF LDMOS. It achieves a good match between the simulated and measured S-parameters in the frequency range over from 0.1 to 5 GHz. Compared with traditional extracting strategy, the proposed method is easier to implement, and the results is more accurate.
提出了一种射频LDMOS晶体管本征参数提取的新方法。该方法利用冷场效应管(Cold-FET)和热场效应管(Hot-FET)两端口参数之间的关系,直接提取射频LDMOS的内在参数,而不提取其外在参数。在0.1 ~ 5ghz的频率范围内,仿真s参数与实测s参数吻合良好。与传统的提取策略相比,该方法更容易实现,结果更准确。
{"title":"A novel method of intrinsic parameters extraction for RF LDMOS transistors","authors":"Lijuan Yin, Helun Song","doi":"10.1109/ICAM.2016.7813574","DOIUrl":"https://doi.org/10.1109/ICAM.2016.7813574","url":null,"abstract":"A novel method of intrinsic parameters extraction for RF LDMOS transistors is proposed in this paper. This method uses the relationship of the two-port parameters between Cold-FET and Hot-FET to extract the intrinsic parameters directly without extracting the extrinsic parameters for RF LDMOS. It achieves a good match between the simulated and measured S-parameters in the frequency range over from 0.1 to 5 GHz. Compared with traditional extracting strategy, the proposed method is easier to implement, and the results is more accurate.","PeriodicalId":179100,"journal":{"name":"2016 International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130628646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2016 International Conference on Integrated Circuits and Microsystems (ICICM)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1