Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088498
P. Gurník, P. Beno, R. Srnánek, M. Tlaczala, B. Ściana, L. Harmatha
The resolution of the capacitance-voltage (C-V) technique on single- and double-delta (/spl delta/)-doped GaAs is shown to be given by the breadth of dopant distribution. The experimental C-V profiles demonstrate that impurities are spatially localized on the length scale of the lattice constant. The sharp distribution of dopants is assessed by the secondary-ion mass spectroscopy.
{"title":"Characterization of delta-doped GaAs grown by MOVPE","authors":"P. Gurník, P. Beno, R. Srnánek, M. Tlaczala, B. Ściana, L. Harmatha","doi":"10.1109/ASDAM.2002.1088498","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088498","url":null,"abstract":"The resolution of the capacitance-voltage (C-V) technique on single- and double-delta (/spl delta/)-doped GaAs is shown to be given by the breadth of dopant distribution. The experimental C-V profiles demonstrate that impurities are spatially localized on the length scale of the lattice constant. The sharp distribution of dopants is assessed by the secondary-ion mass spectroscopy.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"88 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120861665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088518
N. Dogru, M. Sadettin Ozyazici
The effect of carrier noise on mode-locked hybrid soliton pulse source (HSPS) utilizing linearly chirped Gaussian apodized fiber Bragg grating is described. The model is based on a time domain solution of coupled-mode equations. Relative intensity noise (RIN) is calculated using numerical solution of these equations. It is found that carrier noise affects the operation of device and therefore transform limited pulses are not obtained over a wide frequency range although these pulses are generated over a wide frequency range without noise.
{"title":"Carrier noise in mode-locked fiber grating external cavity lasers","authors":"N. Dogru, M. Sadettin Ozyazici","doi":"10.1109/ASDAM.2002.1088518","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088518","url":null,"abstract":"The effect of carrier noise on mode-locked hybrid soliton pulse source (HSPS) utilizing linearly chirped Gaussian apodized fiber Bragg grating is described. The model is based on a time domain solution of coupled-mode equations. Relative intensity noise (RIN) is calculated using numerical solution of these equations. It is found that carrier noise affects the operation of device and therefore transform limited pulses are not obtained over a wide frequency range although these pulses are generated over a wide frequency range without noise.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125944669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088470
B.K. Kotlyarchuk, V. Savchuk
The results of the theoretical and experimental study of laser pulse crystallisation and annealing of the YBa/sub 2/Cu/sub 3/O/sub 7-x/ high-temperature superconducting amorphous layers are presented in the paper. It is determined that for each given film thickness and type of substrate there exists a optimal pressure of oxygen, laser pulse energy density, its duration and wavelength at which the conditions Of thermodynamic stability of the film compound is preserved.
{"title":"Formation of YBa/sub 2/Cu/sub 3/O/sub 7-x//MgO and YBa/sub 2/Cu/sub 3/O/sub 7-x//Si thin film structure by laser pulse crystallisation and annealing","authors":"B.K. Kotlyarchuk, V. Savchuk","doi":"10.1109/ASDAM.2002.1088470","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088470","url":null,"abstract":"The results of the theoretical and experimental study of laser pulse crystallisation and annealing of the YBa/sub 2/Cu/sub 3/O/sub 7-x/ high-temperature superconducting amorphous layers are presented in the paper. It is determined that for each given film thickness and type of substrate there exists a optimal pressure of oxygen, laser pulse energy density, its duration and wavelength at which the conditions Of thermodynamic stability of the film compound is preserved.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124799386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088469
K. Arshak, M. Mihov, A. Arshak, D. McDonagh, D. Sutton, S. Newcomb
Top Surface Imaging (TSI) is a well established technique to improve resolution of optical lithography, deep UV (248 nm) lithography and 193 nm lithography. The Positive Resist Image by Dry Etching (PRIME) process is a high-resolution single layer lithography scheme incorporating electron-beam exposure, near UV exposure (365 nm), silylation and dry development. In this paper, the liquid-phase silylation process step in PRIME with Shipley SPR500A-series resists is experimentally, investigated, and a new efficient process has been developed The impact of different silylating agents is characterised using FT-IR spectroscopy SIM spectrometry and cross-sectional SEM and TEM. Liquid-phase silylated patterns of SPR505 and SPR510 resist are presented, indicating almost vertical silylation sidewall profiles and high-silylation contrast when using Hexamethylcyclotrisiloxane (HMCTS) silylating agents. Results show that in case of e-beam exposure, a dose of 50 C/cm/sup 2/ at 30 keV is efficient to crosslink the resist and prevent silylation.
{"title":"Liquid phase silylation of Shipley SPR500A-series resists using top surface imaging","authors":"K. Arshak, M. Mihov, A. Arshak, D. McDonagh, D. Sutton, S. Newcomb","doi":"10.1109/ASDAM.2002.1088469","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088469","url":null,"abstract":"Top Surface Imaging (TSI) is a well established technique to improve resolution of optical lithography, deep UV (248 nm) lithography and 193 nm lithography. The Positive Resist Image by Dry Etching (PRIME) process is a high-resolution single layer lithography scheme incorporating electron-beam exposure, near UV exposure (365 nm), silylation and dry development. In this paper, the liquid-phase silylation process step in PRIME with Shipley SPR500A-series resists is experimentally, investigated, and a new efficient process has been developed The impact of different silylating agents is characterised using FT-IR spectroscopy SIM spectrometry and cross-sectional SEM and TEM. Liquid-phase silylated patterns of SPR505 and SPR510 resist are presented, indicating almost vertical silylation sidewall profiles and high-silylation contrast when using Hexamethylcyclotrisiloxane (HMCTS) silylating agents. Results show that in case of e-beam exposure, a dose of 50 C/cm/sup 2/ at 30 keV is efficient to crosslink the resist and prevent silylation.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"3018 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127464252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088489
W. Prost
The application of quantum tunnelling devices namely resonant tunnelling diodes for high-performance digital circuitry is presented. The reliability of devices based on III/V semiconductor heterostructures is demonstrated and the applicability of emerging Si/SiGe heterostructures is discussed. The potential breakthrough of this approach is attributed to a very successful implementation in advanced circuit architectures. The applicability of Linear Threshold Gate logic based on the monostable-bistable transition logic element (MOBILE) is discussed here as the presently most promising candidate.
{"title":"Resonant tunnelling diodes for digital circuit applications","authors":"W. Prost","doi":"10.1109/ASDAM.2002.1088489","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088489","url":null,"abstract":"The application of quantum tunnelling devices namely resonant tunnelling diodes for high-performance digital circuitry is presented. The reliability of devices based on III/V semiconductor heterostructures is demonstrated and the applicability of emerging Si/SiGe heterostructures is discussed. The potential breakthrough of this approach is attributed to a very successful implementation in advanced circuit architectures. The applicability of Linear Threshold Gate logic based on the monostable-bistable transition logic element (MOBILE) is discussed here as the presently most promising candidate.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127485111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088486
M. Lorenc, J. Šik
Raman spectroscopy is employed to study the compositional and temperature dependence of optical phonon modes in Si/sub x/Ge/sub 1-x/(0.0037/spl les/./spl times//spl les/1) alloy. Czochralski grown samples are doped in the range from nominally undoped to heavily boron doped, with the highest concentration of free holes of 10/sup 20/ cm/sup -3/. Three observed bands can be attributed to local Si-Si, Ge-Ge and Si-Ge vibrational modes. We present compositional dependence and temperature shift of the Si-Si band.
{"title":"Raman spectroscopy of Si/sub x/Ge/sub 1-x/ compositional and temperature dependence","authors":"M. Lorenc, J. Šik","doi":"10.1109/ASDAM.2002.1088486","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088486","url":null,"abstract":"Raman spectroscopy is employed to study the compositional and temperature dependence of optical phonon modes in Si/sub x/Ge/sub 1-x/(0.0037/spl les/./spl times//spl les/1) alloy. Czochralski grown samples are doped in the range from nominally undoped to heavily boron doped, with the highest concentration of free holes of 10/sup 20/ cm/sup -3/. Three observed bands can be attributed to local Si-Si, Ge-Ge and Si-Ge vibrational modes. We present compositional dependence and temperature shift of the Si-Si band.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121448075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088497
L. Stuchlíková, L. Harmatha, D. Buc, U. Helmersson, Q. Wahab
Deep level transient spectroscopy measurements were performed on silicon carbide (4H-SiC) Schottky diodes with RuO/sub 2/ Schottky contacts in order to investigate electrical properties of a new type of Schottky diode. Two electron deep energy levels were detected on this Schottky diode. Their thermal activation energies are 0.56 eV and 0.85 eV, respectively, referred to the conductance band. The origin of these deep levels is still under investigation.
{"title":"Investigation of 4H-SiC diode with RuO/sub 2/ Schottky contact by DLTS","authors":"L. Stuchlíková, L. Harmatha, D. Buc, U. Helmersson, Q. Wahab","doi":"10.1109/ASDAM.2002.1088497","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088497","url":null,"abstract":"Deep level transient spectroscopy measurements were performed on silicon carbide (4H-SiC) Schottky diodes with RuO/sub 2/ Schottky contacts in order to investigate electrical properties of a new type of Schottky diode. Two electron deep energy levels were detected on this Schottky diode. Their thermal activation energies are 0.56 eV and 0.85 eV, respectively, referred to the conductance band. The origin of these deep levels is still under investigation.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122221916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088532
F. Vysloužil, M. Vrňata, V. Myslík, M. Kovanda, R. Fryček, M. Jelínek
This contribution deals with impedance measurements of gas sensors with active layers prepared by pulsed laser deposition (PLD) technology. The deposition was carried out from tin dioxide (SnO/sub 2/) and tin acetylacetonate (SnAcAc) - based targets by a KrF (wavelength 248 nm) excimer laser. The following systems were investigated (basic material/dopant/catalyst): SnO/sub 2/, SnAcAc, SnAcAc/Pd,SnAcAc/FeAcAc/Pd and SnAcAc/PdAcAc/Pd. These systems were applied as they exhibit an excellent S/sub dc/ sensitivity. The main interest was focused to following problems: measurement of real and imaginary part of complex impedance for frequencies ranging from 100 Hz to 10 MHz, construction of Nyquist diagrams, definition of an alternative phase-angle sensitivity S/sub pa/ (based on phase shift). The influences of S/sub pa/ vs. temperature and S/sub pa/ vs. frequency are also discussed.
{"title":"Impedance measurements of chemical gas sensors","authors":"F. Vysloužil, M. Vrňata, V. Myslík, M. Kovanda, R. Fryček, M. Jelínek","doi":"10.1109/ASDAM.2002.1088532","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088532","url":null,"abstract":"This contribution deals with impedance measurements of gas sensors with active layers prepared by pulsed laser deposition (PLD) technology. The deposition was carried out from tin dioxide (SnO/sub 2/) and tin acetylacetonate (SnAcAc) - based targets by a KrF (wavelength 248 nm) excimer laser. The following systems were investigated (basic material/dopant/catalyst): SnO/sub 2/, SnAcAc, SnAcAc/Pd,SnAcAc/FeAcAc/Pd and SnAcAc/PdAcAc/Pd. These systems were applied as they exhibit an excellent S/sub dc/ sensitivity. The main interest was focused to following problems: measurement of real and imaginary part of complex impedance for frequencies ranging from 100 Hz to 10 MHz, construction of Nyquist diagrams, definition of an alternative phase-angle sensitivity S/sub pa/ (based on phase shift). The influences of S/sub pa/ vs. temperature and S/sub pa/ vs. frequency are also discussed.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126803274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088494
K. Kalna, A. Asenov
The breakdown limit of pseudomorphic high electron mobility transistors (PHEMTs) with double delta-doping structure scaled down into sub-100 nm dimensions is extensively investigated by Monte Carlo device simulations. The two mechanisms responsible for breakdown are channel impact ionization and tunnelling from the gate. The double doped PHEMTs may have two possible placements of the second delta doping layer: either below the channel or between the gate and the first delta doping layer. Quantum mechanical tunnelling starts at very low drain voltages but quickly saturates, having a greater effect on those PHEMTs with the second doping layer placed above the original doping. The threshold for impact ionization occurs at larger drain voltages which should assure the reliable operation voltage scale of double doped PHEMTs. Those double doped PHEMTs with the second delta doping layer placed below the channel deteriorate faster with the reduction of the channel length due to impact ionization than those devices with the second doping layer above the original doping.
{"title":"Breakdown mechanisms limiting the operation of double doped PHEMTs scaled into sub-100 nm dimensions","authors":"K. Kalna, A. Asenov","doi":"10.1109/ASDAM.2002.1088494","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088494","url":null,"abstract":"The breakdown limit of pseudomorphic high electron mobility transistors (PHEMTs) with double delta-doping structure scaled down into sub-100 nm dimensions is extensively investigated by Monte Carlo device simulations. The two mechanisms responsible for breakdown are channel impact ionization and tunnelling from the gate. The double doped PHEMTs may have two possible placements of the second delta doping layer: either below the channel or between the gate and the first delta doping layer. Quantum mechanical tunnelling starts at very low drain voltages but quickly saturates, having a greater effect on those PHEMTs with the second doping layer placed above the original doping. The threshold for impact ionization occurs at larger drain voltages which should assure the reliable operation voltage scale of double doped PHEMTs. Those double doped PHEMTs with the second delta doping layer placed below the channel deteriorate faster with the reduction of the channel length due to impact ionization than those devices with the second doping layer above the original doping.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126833427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-16DOI: 10.1109/ASDAM.2002.1088522
S. Trellenkamp, J. Moers, A. van der Hart, P. Kordos, H. Luth
In addition to the high demands on lithography, short channel behaviour is a problem for miniaturisation of devices. Double gate MOSFETs are known to improve the short channel effect and are traded in the ITRS roadmap as a part of non-classical CMOS, which can provide a path to scaling MOSFETs below the 65 nm node. For the centre of a special vertical layout a silicon web with 300 nm height and 20 nm width is required. The web lines are made by electron beam lithography with hydrogen silsesquioxane (HSQ) as negative tone resist. 23 nm wide and 100 nm high lines in HSQ were attained. The transfer of the structures to substrate by dry etching results in 30 nm wide and 300 nm high silicon lines. First transistors with a channel length of 100 nm and gate oxide thickness of 6 nm were fabricated. These first transistors show transconductances of up to 40 /spl mu/S//spl mu/m.
{"title":"Process steps for a double gate MOSFET with vertical layout","authors":"S. Trellenkamp, J. Moers, A. van der Hart, P. Kordos, H. Luth","doi":"10.1109/ASDAM.2002.1088522","DOIUrl":"https://doi.org/10.1109/ASDAM.2002.1088522","url":null,"abstract":"In addition to the high demands on lithography, short channel behaviour is a problem for miniaturisation of devices. Double gate MOSFETs are known to improve the short channel effect and are traded in the ITRS roadmap as a part of non-classical CMOS, which can provide a path to scaling MOSFETs below the 65 nm node. For the centre of a special vertical layout a silicon web with 300 nm height and 20 nm width is required. The web lines are made by electron beam lithography with hydrogen silsesquioxane (HSQ) as negative tone resist. 23 nm wide and 100 nm high lines in HSQ were attained. The transfer of the structures to substrate by dry etching results in 30 nm wide and 300 nm high silicon lines. First transistors with a channel length of 100 nm and gate oxide thickness of 6 nm were fabricated. These first transistors show transconductances of up to 40 /spl mu/S//spl mu/m.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121063560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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