Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297854
M. Sahini, T. Grande, N. Setter
Orthorhombic Lead metaniobate (PbNb2O6) exhibits ferroelectric properties and has a Curie temperature, TC of 570°C. This work reports on investigations made on ferroelectric Lead metaniobate, (PN) and its solid solutions with bismuth and titanium Pb(1-X)BiX(Nb(1-X/2)TiX/2)2O6, (PBTN), bismuth and sodium Pb(1-X)BiX/2NaX/2Nb2O6, (PBNN), bismuth and potassium Pb(1-X)BiX/2KX/2Nb2O6,(PBKN), and calcium and titanium (1-x)PbNb2O6-xCaTiO2, (PCTN). The ferroelectric polymorph was obtained for all the solid solutions without quenching, and the optimized sintering temperature was reduced with increasing substitution level except in the system PCTN. The lattice parameters of the solid solutions were found to systematically vary with composition. Curie temperature was reduced with increasing substitution level in all the series. Piezoelectric charge constant d33 increases with composition of the solid solutions.
{"title":"Ferroelectric Lead metaniobate and its solid solutions: Solid state synthesis and characterization","authors":"M. Sahini, T. Grande, N. Setter","doi":"10.1109/ISAF.2012.6297854","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297854","url":null,"abstract":"Orthorhombic Lead metaniobate (PbNb<sub>2</sub>O<sub>6</sub>) exhibits ferroelectric properties and has a Curie temperature, T<sub>C</sub> of 570°C. This work reports on investigations made on ferroelectric Lead metaniobate, (PN) and its solid solutions with bismuth and titanium Pb<sub>(1-X)</sub>Bi<sub>X</sub>(Nb<sub>(1-X/2)</sub>Ti<sub>X/2)2</sub>O<sub>6</sub>, (PBTN), bismuth and sodium Pb<sub>(1-X)</sub>Bi<sub>X/2</sub>Na<sub>X/2</sub>Nb<sub>2</sub>O<sub>6</sub>, (PBNN), bismuth and potassium Pb<sub>(1-X)</sub>Bi<sub>X/2</sub>K<sub>X/2</sub>Nb<sub>2</sub>O<sub>6</sub>,(PBKN), and calcium and titanium (1-x)PbNb<sub>2</sub>O<sub>6</sub>-xCaTiO<sub>2</sub>, (PCTN). The ferroelectric polymorph was obtained for all the solid solutions without quenching, and the optimized sintering temperature was reduced with increasing substitution level except in the system PCTN. The lattice parameters of the solid solutions were found to systematically vary with composition. Curie temperature was reduced with increasing substitution level in all the series. Piezoelectric charge constant d33 increases with composition of the solid solutions.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"75 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76518375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297831
P. Bednyakov, N. Setter, D. Rytz
Dielectric properties of K(Ta0,53Nb0,47)O3 [KTN] single crystals with <;100>; and <;011>; crystallographic orientation were studied. Temperature dependencies of dielectric permittivity of monodomain and polydomain crystals of these orientations are compared.
{"title":"Dielectric properties of K(Ta0.53Nb0.47)O3 single crystal","authors":"P. Bednyakov, N. Setter, D. Rytz","doi":"10.1109/ISAF.2012.6297831","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297831","url":null,"abstract":"Dielectric properties of K(Ta<sub>0,53</sub>Nb<sub>0,47</sub>)O<sub>3</sub> [KTN] single crystals with <;100>; and <;011>; crystallographic orientation were studied. Temperature dependencies of dielectric permittivity of monodomain and polydomain crystals of these orientations are compared.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"60 3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77410324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297741
Yi-Ying Lai, Chih-Kung Lee, Wen-Jong Wu
The main purpose of this paper is to compare three different topologies of LED drivers by using a piezoelectric transformer. The advantages of LEDs lighting applications include small size, low power consumption and high efficacy. On the other hand, the merits of the piezoelectric transformer are thin profile, high power density and no electromagnetic interference radiation unlike conventional electromagnetic transformers. Therefore, piezoelectric transformers are suitable to drive LEDs. Since the output voltage of a piezoelectric transformer is highly related to the load impedance, the type of the connection between the piezoelectric transformer and LEDs is a key design parameters as it influences temperature rise and efficiency. In this paper, three different types of connections in driving LEDs are discussed in detail. They are LED self-rectifier, full-wave rectifier and current doubler. Theoretical analysis of these three various topologies are discussed. The theoretical predictions were verified by the circuit simulator PSIM. The characteristics of the three driving methods are compared and summarized.
{"title":"Comparison of three different topologies of driving LEDs with a piezoelectric transformer","authors":"Yi-Ying Lai, Chih-Kung Lee, Wen-Jong Wu","doi":"10.1109/ISAF.2012.6297741","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297741","url":null,"abstract":"The main purpose of this paper is to compare three different topologies of LED drivers by using a piezoelectric transformer. The advantages of LEDs lighting applications include small size, low power consumption and high efficacy. On the other hand, the merits of the piezoelectric transformer are thin profile, high power density and no electromagnetic interference radiation unlike conventional electromagnetic transformers. Therefore, piezoelectric transformers are suitable to drive LEDs. Since the output voltage of a piezoelectric transformer is highly related to the load impedance, the type of the connection between the piezoelectric transformer and LEDs is a key design parameters as it influences temperature rise and efficiency. In this paper, three different types of connections in driving LEDs are discussed in detail. They are LED self-rectifier, full-wave rectifier and current doubler. Theoretical analysis of these three various topologies are discussed. The theoretical predictions were verified by the circuit simulator PSIM. The characteristics of the three driving methods are compared and summarized.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"45 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85681267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297846
K. Ujimoto, T. Yoshimura, N. Fujimura
Crystal structure and microstructure such as surface morphology and ferroelectric domain structure of 0.2- to 2.0-μm-thick BiFeO3 epitaxial films deposited between 400 and 700°C were evaluated. For the films deposited at 500°C, tetragonal BiFeO3 was grown The relaxation of the lattice strain drastically occurred by increasing the film thickness. On the other hand, rhombohedral BiFeO3 with tetragonal distortion was grown and the relaxation of the lattice strain occurred by the grain growth for the films deposited at 650°C. The grains consist of single domain for the films deposited at 500°C, while those of films deposited at 650°C consist of multi domains. It is suggested that the domain walls existing inside the grains contributes the piezoelectric response.
{"title":"Growth temperature and thickness dependences of crystal and micro domain structures of BiFeO3 epitaxial films","authors":"K. Ujimoto, T. Yoshimura, N. Fujimura","doi":"10.1109/ISAF.2012.6297846","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297846","url":null,"abstract":"Crystal structure and microstructure such as surface morphology and ferroelectric domain structure of 0.2- to 2.0-μm-thick BiFeO3 epitaxial films deposited between 400 and 700°C were evaluated. For the films deposited at 500°C, tetragonal BiFeO3 was grown The relaxation of the lattice strain drastically occurred by increasing the film thickness. On the other hand, rhombohedral BiFeO3 with tetragonal distortion was grown and the relaxation of the lattice strain occurred by the grain growth for the films deposited at 650°C. The grains consist of single domain for the films deposited at 500°C, while those of films deposited at 650°C consist of multi domains. It is suggested that the domain walls existing inside the grains contributes the piezoelectric response.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"1999 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89929509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297853
U. Salazar-Kuri, M. Mendoza, Dragan Damjanovic, N. Setter
The conductivity of Bi4Ti3O12 (BiT) single crystals was calculated from the dielectric response at subswitching conditions over a wide range of temperatures (20-250 °C) and frequencies (100 mHz to 10 kHz) in-plane and out-of-plane. The calculated activation energy for dc conductivity was approximately the same as the energy gap around 3 eV suggesting an electron-hole charge movement. The dominant electronic contribution was seen by polarized optical microscopy on transmission by the absorption of a laser of 3 eV.
{"title":"Conductivity and optical absorption in Bi4Ti3O12 single crystals","authors":"U. Salazar-Kuri, M. Mendoza, Dragan Damjanovic, N. Setter","doi":"10.1109/ISAF.2012.6297853","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297853","url":null,"abstract":"The conductivity of Bi4Ti3O12 (BiT) single crystals was calculated from the dielectric response at subswitching conditions over a wide range of temperatures (20-250 °C) and frequencies (100 mHz to 10 kHz) in-plane and out-of-plane. The calculated activation energy for dc conductivity was approximately the same as the energy gap around 3 eV suggesting an electron-hole charge movement. The dominant electronic contribution was seen by polarized optical microscopy on transmission by the absorption of a laser of 3 eV.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"1200 ","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91520312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297819
A. Vincent, V. Grimal, F. Gervais, L. Ventura, N. Poirot
The purpose of this work is to develop a new route for BST synthesis. BST thin film are produced by spin coating on an oriented LNO/Si substrate. The phase purity and possible crystalline orientation are determined by XRD. BST microstructure and texturation are discussed from detailed SEM images and capacitance measurement confirm the BST performances.
{"title":"New route for BST synthesis by soft chemistry","authors":"A. Vincent, V. Grimal, F. Gervais, L. Ventura, N. Poirot","doi":"10.1109/ISAF.2012.6297819","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297819","url":null,"abstract":"The purpose of this work is to develop a new route for BST synthesis. BST thin film are produced by spin coating on an oriented LNO/Si substrate. The phase purity and possible crystalline orientation are determined by XRD. BST microstructure and texturation are discussed from detailed SEM images and capacitance measurement confirm the BST performances.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"37 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91545071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297728
Yih-Chien Chen, Ming-De Chen
The microwave dielectric properties of La(Mg0.5-xSrxSn0.5)O3 ceramics were examined with a view to their exploitation for wireless communications. The La(Mg0.5-xSrxSn0.5)O3 ceramics were prepared by the conventional solid-state method with various sintering temperatures. The La(Mg0.5-xSrxSn0.5)O3 ceramics contained La2O3. An apparent density of 6.56 g/cm3, a dielectric constant (ϵr) of 20.5, a quality factor (Q × f) of 107,900 GHz, and a temperature coefficient of resonant frequency (τf) of -84 ppm/°C were obtained for La(Mg0.4Sr0.1Sn0.5)O3 ceramics that were sintered at 1500 °C for 4 h.
{"title":"Microwave dielectric properties of novel ceramic for application in wireless communications","authors":"Yih-Chien Chen, Ming-De Chen","doi":"10.1109/ISAF.2012.6297728","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297728","url":null,"abstract":"The microwave dielectric properties of La(Mg<sub>0.5-x</sub>Sr<sub>x</sub>Sn<sub>0.5</sub>)O<sub>3</sub> ceramics were examined with a view to their exploitation for wireless communications. The La(Mg<sub>0.5-x</sub>Sr<sub>x</sub>Sn<sub>0.5</sub>)O<sub>3</sub> ceramics were prepared by the conventional solid-state method with various sintering temperatures. The La(Mg<sub>0.5-x</sub>Sr<sub>x</sub>Sn<sub>0.5</sub>)O<sub>3</sub> ceramics contained La<sub>2</sub>O<sub>3</sub>. An apparent density of 6.56 g/cm<sup>3</sup>, a dielectric constant (ϵ<sub>r</sub>) of 20.5, a quality factor (Q × f) of 107,900 GHz, and a temperature coefficient of resonant frequency (τ<sub>f</sub>) of -84 ppm/°C were obtained for La(Mg<sub>0.4</sub>Sr<sub>0.1</sub>Sn<sub>0.5</sub>)O<sub>3</sub> ceramics that were sintered at 1500 °C for 4 h.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"93 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86673019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297769
H. Funakubo, S. Yasui, K. Yazawa, J. Nagata, T. Oikawa, T. Yamada, H. Uchida
We developed the piezoelectric materials not including Pb, Li, K and Na as constituent elements. Our concern is the composition survey of the morphotropic phase boundary between tetragonal and non-tetragonal ferroelectric materials. In this approach, we must select the tetragonal ferroelectrics other than PbTiO3 and (Bi1/2K1/2)TiO3 as a end material. BiCoO3 and Bi(Zn1/2Ti1/2)O3 are novel tetragonal candidates for this purpose. We successfully grew epitaxial tetragonal films having ferroelectricity in BiCoO3-BiFeO3 and Bi(Zn1/2Ti1/2)O3-BiFeO3 systems. Based on these system, composition having maximum piezoelectric response of d33(AFM) = 280 pm/V was discovered for epitaxial films in Bi(Zn1/2Ti1/2)O3-Bi(Mg1/2Ti1/2)O3-BiFeO3 system.
{"title":"Development of novel Pb, Li, Na and K-free piezoelectric materials for Si-based MEMS application","authors":"H. Funakubo, S. Yasui, K. Yazawa, J. Nagata, T. Oikawa, T. Yamada, H. Uchida","doi":"10.1109/ISAF.2012.6297769","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297769","url":null,"abstract":"We developed the piezoelectric materials not including Pb, Li, K and Na as constituent elements. Our concern is the composition survey of the morphotropic phase boundary between tetragonal and non-tetragonal ferroelectric materials. In this approach, we must select the tetragonal ferroelectrics other than PbTiO<sub>3</sub> and (Bi<sub>1/2</sub>K<sub>1/2</sub>)TiO<sub>3</sub> as a end material. BiCoO<sub>3</sub> and Bi(Zn<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub> are novel tetragonal candidates for this purpose. We successfully grew epitaxial tetragonal films having ferroelectricity in BiCoO<sub>3</sub>-BiFeO<sub>3</sub> and Bi(Zn<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub>-BiFeO<sub>3</sub> systems. Based on these system, composition having maximum piezoelectric response of d<sub>33(AFM)</sub> = 280 pm/V was discovered for epitaxial films in Bi(Zn<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub>-Bi(Mg<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub>-BiFeO<sub>3</sub> system.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"23 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83635841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297757
J. Kulawk, D. Szwagierczak, B. Synkiewicz
The nonferroelectric high-permittivity material CaCu3Ti4O12, being a naturally formed internal barrier layer capacitor, was utilized for preparation of slurries for tape casting and fabrication of multilayer ceramic capacitors. Screen printed silver or silver-palladium electrodes were co-fired with ceramic green sheets at 940°C. The dielectric properties of the CaCu3Ti4O12-based multilayer capacitors were studied in a wide frequency range of 0.1 Hz-2 MHz and in the temperature range from -55 to 400°C. The dominant response which is recorded at low frequency range and at temperatures above 150°C is related to grain boundaries. The dielectric response at low temperatures and/or high frequencies is attributed to grains. SEM and EDS studies showed heterogeneous microstructure and composition of ceramic layers. Large grains have composition close to stoichiometric CCTO, while smaller grains and grain boundaries regions are enriched in oxygen and depleted in copper. The fabricated multilayer capacitors exhibit low sintering temperature suitable for use of cheap electrodes, good compatibility of ceramic layers with the applied commercial conductive pastes, high specific capacitance and a relatively low temperature coefficient of capacitance.
{"title":"Multilayer ceramic capacitors with CaCu3Ti4O12 dielectric","authors":"J. Kulawk, D. Szwagierczak, B. Synkiewicz","doi":"10.1109/ISAF.2012.6297757","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297757","url":null,"abstract":"The nonferroelectric high-permittivity material CaCu3Ti4O12, being a naturally formed internal barrier layer capacitor, was utilized for preparation of slurries for tape casting and fabrication of multilayer ceramic capacitors. Screen printed silver or silver-palladium electrodes were co-fired with ceramic green sheets at 940°C. The dielectric properties of the CaCu3Ti4O12-based multilayer capacitors were studied in a wide frequency range of 0.1 Hz-2 MHz and in the temperature range from -55 to 400°C. The dominant response which is recorded at low frequency range and at temperatures above 150°C is related to grain boundaries. The dielectric response at low temperatures and/or high frequencies is attributed to grains. SEM and EDS studies showed heterogeneous microstructure and composition of ceramic layers. Large grains have composition close to stoichiometric CCTO, while smaller grains and grain boundaries regions are enriched in oxygen and depleted in copper. The fabricated multilayer capacitors exhibit low sintering temperature suitable for use of cheap electrodes, good compatibility of ceramic layers with the applied commercial conductive pastes, high specific capacitance and a relatively low temperature coefficient of capacitance.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"5 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83502994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-07-09DOI: 10.1109/ISAF.2012.6297821
B. Fraygola, J. Eiras
Multiferroic solid solutions between Pb(Fe2/3W1/3)O3 (PFW) and PbTiO3 (PT) [PFW-PT] have been characterized by anelastic measurements. Anomalies in the temperature dependence of the elastic constants have been observed at TN and TC for all samples, indicating that the magnetoelectric coupling (ME) between the ferroelectric and antiferromagnetic orders occurs “via strain”. A numerical approximation for the ME coefficients was obtained from the eletroelastic and magnetoelastic coefficients and the values of electric and magnetic susceptibility. These coefficients are greater the closer the temperatures of AFM and FE orders are with each other.
{"title":"Intrinsic magnetoelectric coupling in PFW-PT solid solutions","authors":"B. Fraygola, J. Eiras","doi":"10.1109/ISAF.2012.6297821","DOIUrl":"https://doi.org/10.1109/ISAF.2012.6297821","url":null,"abstract":"Multiferroic solid solutions between Pb(Fe<sub>2/3</sub>W<sub>1/3</sub>)O<sub>3</sub> (PFW) and PbTiO<sub>3</sub> (PT) [PFW-PT] have been characterized by anelastic measurements. Anomalies in the temperature dependence of the elastic constants have been observed at T<sub>N</sub> and T<sub>C</sub> for all samples, indicating that the magnetoelectric coupling (ME) between the ferroelectric and antiferromagnetic orders occurs “via strain”. A numerical approximation for the ME coefficients was obtained from the eletroelastic and magnetoelastic coefficients and the values of electric and magnetic susceptibility. These coefficients are greater the closer the temperatures of AFM and FE orders are with each other.","PeriodicalId":20497,"journal":{"name":"Proceedings of ISAF-ECAPD-PFM 2012","volume":"63 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83957279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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