Among various methods for generating artificial tactile sensations, a haptic device that employs electrical stimulation has attracted significant attention due to its high potential for realizing hyper-realistic touch. Considering the high skin impedance and the dense population of tactile receptors in the fingers, achieving a high-resolution electrode design with high-power operation and a flexible form-factor is required. In this study, an electrical stimulation haptic device employing a high-power transistor with an active matrix (AM) design on a flexible substrate was demonstrated. We optimized parameters for the thin-film transistor (TFT) employing Indium-Gallium-Zinc-Oxide (IGZO) to sustain biphasic signal conditions as well as high power driving for electrical stimulation and its compatibility with low-process temperature for flexible form-factor. In order to secure the operating range of the driving TFT, the skin resistance value was measured based on the actual electrical stimulation waveform and confirmed to be 20–30 kΩ on average. The resulting device achieved a spatial resolution of 64 channels within a 1 cm² area. To achieve high drain current of TFT, a comb-shaped design of source and drain was suggested. The TFT can transfer high biphasic voltage (∼±50 V) with high simulation current (>10 mA). Therefore, the electrical stimulation device with high electrode density can supply sufficient power with wide bipolar stimulus signal swings stably for finger skin stimulation and various human interface devices.
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