Pub Date : 2024-09-04DOI: 10.1134/s1063782624030126
D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev
Abstract
It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of n+/n GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth for an electron concentration in the n+-layer > 4 × 1018 cm–3 when using EDTA electrolyte. This difference is due to the appearance and development of etching pits caused by the increase in the degree of defectivity of GaAs layers with increasing concentration of the donor impurity—silicon. To obtain adequate electron distribution profiles in n+/n GaAs structures it is necessary to limit the illumination up to 25 W.
{"title":"The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors","authors":"D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev","doi":"10.1134/s1063782624030126","DOIUrl":"https://doi.org/10.1134/s1063782624030126","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of <i>n</i><sup>+</sup>/<i>n</i> GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth for an electron concentration in the <i>n</i><sup>+</sup>-layer > 4 × 10<sup>18</sup> cm<sup>–3</sup> when using EDTA electrolyte. This difference is due to the appearance and development of etching pits caused by the increase in the degree of defectivity of GaAs layers with increasing concentration of the donor impurity—silicon. To obtain adequate electron distribution profiles in <i>n</i><sup>+</sup>/<i>n</i> GaAs structures it is necessary to limit the illumination up to 25 W.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1134/s1063782624020040
A. A. Gavrikov, V. G. Kuznetsov, A. V. Kolobov
Abstract
Reducing the thickness of semiconductors to the limit of a few monolayers often leads to emergence of new properties. In this work, the thickness dependence of the band gap of cadmium telluride slabs in both the sphalerite phase and in the inverted phase is studied using the density functional theory method. The sphalerite phase is characterized by Cd–Te–Cd–Te alternating atomic planes, while in the inverted phase the order of planes is Te–Cd–Cd–Te. It is shown that using slabs with a thickness of one to several monolayers variable-gap structures can be fabricated.
{"title":"Band Gap Variation of 2D CdTe Slabs in the Sphalerite Phase and in the Phase with Boundary Chalcogen Atoms","authors":"A. A. Gavrikov, V. G. Kuznetsov, A. V. Kolobov","doi":"10.1134/s1063782624020040","DOIUrl":"https://doi.org/10.1134/s1063782624020040","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Reducing the thickness of semiconductors to the limit of a few monolayers often leads to emergence of new properties. In this work, the thickness dependence of the band gap of cadmium telluride slabs in both the sphalerite phase and in the inverted phase is studied using the density functional theory method. The sphalerite phase is characterized by Cd–Te–Cd–Te alternating atomic planes, while in the inverted phase the order of planes is Te–Cd–Cd–Te. It is shown that using slabs with a thickness of one to several monolayers variable-gap structures can be fabricated.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1134/s1063782624020155
Zh. V. Smagina, M. V. Stepikhova, V. A. Zinovyev, S. A. Dyakov, E. E. Rodyakina, D. V. Shengurov, A. V. Kacyuba, A. V. Novikov
Abstract
The emission properties of ordered arrays of silicon disk-like resonators with embedded GeSi quantum dots are studied. It is shown that, depending on the distance between the resonators, the structures can exhibit the properties of isolated Mie resonators or photonic crystals characterized by the presence of a contribution from photonic crystal modes in the photoluminescence spectrum. The formation of photonic crystals based on the disk-like resonators makes it possible to significantly increase the luminescence response in the wavelength range of 1.2–1.6 μm, even at room temperature.
{"title":"Luminescent Properties of Ordered Arrays of Silicon Disk-Like Resonators with Embedded GeSi Quantum Dots","authors":"Zh. V. Smagina, M. V. Stepikhova, V. A. Zinovyev, S. A. Dyakov, E. E. Rodyakina, D. V. Shengurov, A. V. Kacyuba, A. V. Novikov","doi":"10.1134/s1063782624020155","DOIUrl":"https://doi.org/10.1134/s1063782624020155","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The emission properties of ordered arrays of silicon disk-like resonators with embedded GeSi quantum dots are studied. It is shown that, depending on the distance between the resonators, the structures can exhibit the properties of isolated Mie resonators or photonic crystals characterized by the presence of a contribution from photonic crystal modes in the photoluminescence spectrum. The formation of photonic crystals based on the disk-like resonators makes it possible to significantly increase the luminescence response in the wavelength range of 1.2–1.6 μm, even at room temperature.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1134/s1063782624020027
M. N. Bataev, M. S. Kuznetsova, D. V. Pankin, M. B. Smirnov, S. Yu. Verbin, I. V Ignatiev, I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, E. V. Kolobkova
Abstract
The photoluminescence (PL) spectra of CsPbBr3 perovskite nanocrystals grown in a fluorophosphate glass matrix exhibit phonon replicas of the exciton line. The dependence of intensity of the phonon replica on its number is simulated taking into account the difference in the curvature of the excited and ground adiabatic potentials. The Raman spectra of CsPbBr3 nanocrystals are measured. Calculations based on the density functional theory is performed to obtain the spectrum of phonon states of these crystals in the orthorhombic phase. The phonon frequencies observed in the PL and Raman spectra are compared with the calculation results.
{"title":"Electron-Phonon Interaction in Perovskite Nanocrystals in Fluorophosphate Glass Matrix","authors":"M. N. Bataev, M. S. Kuznetsova, D. V. Pankin, M. B. Smirnov, S. Yu. Verbin, I. V Ignatiev, I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, E. V. Kolobkova","doi":"10.1134/s1063782624020027","DOIUrl":"https://doi.org/10.1134/s1063782624020027","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The photoluminescence (PL) spectra of CsPbBr<sub>3</sub> perovskite nanocrystals grown in a fluorophosphate glass matrix exhibit phonon replicas of the exciton line. The dependence of intensity of the phonon replica on its number is simulated taking into account the difference in the curvature of the excited and ground adiabatic potentials. The Raman spectra of CsPbBr<sub>3</sub> nanocrystals are measured. Calculations based on the density functional theory is performed to obtain the spectrum of phonon states of these crystals in the orthorhombic phase. The phonon frequencies observed in the PL and Raman spectra are compared with the calculation results.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1134/s1063782624020088
N. N. Konobeeva, R. R. Trofimov, M. B. Belonenko
Abstract
In this paper, we study quantum transport, namely, the dynamics of the electron density in a fractal lattice during the propagation of electrons in it. The fractal lattice is composed of nanowires and has the form of a Sierpinski triangle in the direction perpendicular to the direction of electron propagation. The fundamental point is to take into account the Coulomb repulsion of electrons at one lattice site.
{"title":"Quantum Transport in Fractal Lattices with Coulomb Interaction","authors":"N. N. Konobeeva, R. R. Trofimov, M. B. Belonenko","doi":"10.1134/s1063782624020088","DOIUrl":"https://doi.org/10.1134/s1063782624020088","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this paper, we study quantum transport, namely, the dynamics of the electron density in a fractal lattice during the propagation of electrons in it. The fractal lattice is composed of nanowires and has the form of a Sierpinski triangle in the direction perpendicular to the direction of electron propagation. The fundamental point is to take into account the Coulomb repulsion of electrons at one lattice site.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1134/s1063782624020143
M. S. Ruzhevich, K. D. Mynbaev, N. L. Bazhenov, V. S. Varavin, V. G. Remesnik, N. N. Mikhailov, M. V. Yakushev
Abstract
The results of a study of photoluminescence (PL) of epitaxial films of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te solid solutions grown by molecular beam epitaxy are presented. A comparison of PL data with the results of optical transmission measurements and structural and microscopic studies showed that in terms of the degree of disorder of the solid solution, the studied Hg0.7Cd0.3Te films are not inferior in quality to the material synthesized by other methods. For Hg0.3Cd0.7Te films, PL data revealed significant composition fluctuations and the presence of acceptor states, which indicates the need to optimize the technology.
{"title":"Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films","authors":"M. S. Ruzhevich, K. D. Mynbaev, N. L. Bazhenov, V. S. Varavin, V. G. Remesnik, N. N. Mikhailov, M. V. Yakushev","doi":"10.1134/s1063782624020143","DOIUrl":"https://doi.org/10.1134/s1063782624020143","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of a study of photoluminescence (PL) of epitaxial films of Hg<sub>0.3</sub>Cd<sub>0.7</sub>Te and Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te solid solutions grown by molecular beam epitaxy are presented. A comparison of PL data with the results of optical transmission measurements and structural and microscopic studies showed that in terms of the degree of disorder of the solid solution, the studied Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te films are not inferior in quality to the material synthesized by other methods. For Hg<sub>0.3</sub>Cd<sub>0.7</sub>Te films, PL data revealed significant composition fluctuations and the presence of acceptor states, which indicates the need to optimize the technology.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1134/s106378262402009x
A. S. Lenshin, Ya. A. Peshkov, O. V. Chernousova, K. A. Barkov, S. V. Kannykin
Abstract
Based on X-ray reflectometry and ultrasoft X-ray spectroscopy data, the opportunity of controlling surface porosity using multi-stage electrochemical etching modes is presented. It is presented how, with an increase in the porosity index of the near-surface layer, the morphology changes and the degree of oxidation of multilayer porous silicon samples increases.
摘要 基于 X 射线反射仪和超软 X 射线光谱数据，介绍了利用多级电化学蚀刻模式控制表面孔隙率的机会。介绍了随着近表面层孔隙率指数的增加，多层多孔硅样品的形貌如何发生变化以及氧化程度如何增加。
{"title":"Influence of Etching Modes on the Morphology and Composition of the Surface of Multilayer Porous Silicon","authors":"A. S. Lenshin, Ya. A. Peshkov, O. V. Chernousova, K. A. Barkov, S. V. Kannykin","doi":"10.1134/s106378262402009x","DOIUrl":"https://doi.org/10.1134/s106378262402009x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Based on X-ray reflectometry and ultrasoft X-ray spectroscopy data, the opportunity of controlling surface porosity using multi-stage electrochemical etching modes is presented. It is presented how, with an increase in the porosity index of the near-surface layer, the morphology changes and the degree of oxidation of multilayer porous silicon samples increases.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1134/s1063782624020179
F. I. Zubov, Yu. M. Shernyakov, A. A. Beckman, E. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, A. V. Nikolaev, E. V. Sherstnev, M. V. Maximov
Abstract
A technique is proposed for determining the temperature of a laser diode operating in a continuous mode, as well as thermal resistance of the device by comparing its current-voltage characteristic with pulsed current-voltage characteristics measured at different temperatures. The technique was applied to a ∅200 μm half-disk microlaser with an active region based on InGaAs/GaAs quantum dots. It was found that at currents corresponding to the peak laser power and lasing quenching due to overheating of the active region, the device temperature reaches 101 and 149°C, respectively. The thermal resistance of the laser is 110 K/W.
{"title":"Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics","authors":"F. I. Zubov, Yu. M. Shernyakov, A. A. Beckman, E. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, A. V. Nikolaev, E. V. Sherstnev, M. V. Maximov","doi":"10.1134/s1063782624020179","DOIUrl":"https://doi.org/10.1134/s1063782624020179","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A technique is proposed for determining the temperature of a laser diode operating in a continuous mode, as well as thermal resistance of the device by comparing its current-voltage characteristic with pulsed current-voltage characteristics measured at different temperatures. The technique was applied to a ∅200 μm half-disk microlaser with an active region based on InGaAs/GaAs quantum dots. It was found that at currents corresponding to the peak laser power and lasing quenching due to overheating of the active region, the device temperature reaches 101 and 149°C, respectively. The thermal resistance of the laser is 110 K/W.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1134/s1063782624020118
E. B. Olshanetsky, Z. D. Kvon, N. N. Mikhailov
Abstract
Weak localization in a highly disordered quantum well CdxHg1 – xTe/HgTe/CdxHg1 – xTe with a thickness of d = 20 nm is experimentally investigated. An analysis is made of the anomalous positive magnetoresistance (APM) caused by the suppression of the interference correction to the conductivity by a magnetic field on both sides of the charge neutrality point: for a two-dimensional semimetal and for a two-dimensional electronic metal. For the same values of resistivity, the APM peak in a 2D semimetal has a much wider width than in a 2D electron gas. A quantitative comparison of the obtained results with the theory allows, in particular, to conclude that the intensity of carrier transitions between subsystems in the 2D semimetal binary system is maximum near the charge neutrality point, where the concentrations of electrons and holes are close, and decreases as the difference in concentrations increases.
{"title":"Weak Antilocalization in a Strongly Disordered Two-Dimensional Semimetal in an HgTe Quantum Well","authors":"E. B. Olshanetsky, Z. D. Kvon, N. N. Mikhailov","doi":"10.1134/s1063782624020118","DOIUrl":"https://doi.org/10.1134/s1063782624020118","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Weak localization in a highly disordered quantum well Cd<sub><i>x</i></sub>Hg<sub>1 – <i>x</i></sub>Te/HgTe/Cd<sub><i>x</i></sub>Hg<sub>1 – <i>x</i></sub>Te with a thickness of <i>d =</i> 20 nm is experimentally investigated. An analysis is made of the anomalous positive magnetoresistance (APM) caused by the suppression of the interference correction to the conductivity by a magnetic field on both sides of the charge neutrality point: for a two-dimensional semimetal and for a two-dimensional electronic metal. For the same values of resistivity, the APM peak in a 2D semimetal has a much wider width than in a 2D electron gas. A quantitative comparison of the obtained results with the theory allows, in particular, to conclude that the intensity of carrier transitions between subsystems in the 2D semimetal binary system is maximum near the charge neutrality point, where the concentrations of electrons and holes are close, and decreases as the difference in concentrations increases.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-02DOI: 10.1134/s1063782624020076
A. S. Gudovskikh, A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, A. A. Maksimova, D. A. Kirilenko
Abstract
For the first time, InP layers were grown on Si substrates at a temperature of 380°C using the plasma-enhanced atomic layer deposition. According to X-ray diffraction analysis and transmission electron microscopy, the layers are microcrystalline with a grain size of 20–30 nm and a preferred orientation (111). Raman spectra exhibit clearly distinguish the LO peak at 341.9 cm–1, which is characteristic of crystalline InP. Microcrystalline InP layers grown on fused silica substrates demonstrated a high photoconductivity of 2.3 Ω–1 cm–1 under solar spectrum AM1.5G (100 mW/cm2) illumination. The study of the growth of layers of binary compounds InP and GaP in one process of plasma-enhanced atomic layer deposition demonstrated the fundamental possibility of controlling the composition of InP/GaP digital alloy. The InP/GaP digital alloys are characterized by the coalescence of the LO peaks of InP (341.9 cm–1) and GaP (365 cm–1) in the Raman spectra. Increase of GaP component in the layer leads to boarding of this feature in the Raman spectra due to a shift of the edge towards the GaP peak (402 cm–1). A study of the optical properties by transmission and reflection measurements of microcrystalline InP/GaP digital alloy layers deposited on transparent substrates demonstrated the possibility of varying the optical gap in the range of 1.3–2 eV.
摘要 利用等离子体增强原子层沉积技术，首次在 380°C 的温度下在硅衬底上生长出 InP 层。根据 X 射线衍射分析和透射电子显微镜观察，该层为微晶，晶粒大小为 20-30 纳米，优先取向为 111。拉曼光谱清楚地显示出 341.9 cm-1 处的 LO 峰，这是晶体 InP 的特征。在熔融石英基底上生长的微晶 InP 层在太阳光谱 AM1.5G（100 mW/cm2）照射下显示出 2.3 Ω-1 cm-1 的高光电导率。在等离子体增强原子层沉积的一个过程中，对二元化合物 InP 和 GaP 的层生长进行的研究表明，控制 InP/GaP 数字合金的成分具有根本的可能性。InP/GaP 数字合金的特征是拉曼光谱中 InP（341.9 cm-1）和 GaP（365 cm-1）的 LO 峰聚合。由于拉曼光谱中的 GaP 峰（402 cm-1）边缘向 GaP 峰移动，因此层中 GaP 成分的增加会导致这一特征的消失。通过对沉积在透明基底上的微晶 InP/GaP 数字合金层进行透射和反射测量来研究其光学特性，证明了在 1.3-2 eV 范围内改变光隙的可能性。
{"title":"Plasma Enhanced Atomic Layer Deposition of InP Layers and Multilayer InP/GaP Structures on Si Substrate","authors":"A. S. Gudovskikh, A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, A. A. Maksimova, D. A. Kirilenko","doi":"10.1134/s1063782624020076","DOIUrl":"https://doi.org/10.1134/s1063782624020076","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>For the first time, InP layers were grown on Si substrates at a temperature of 380°C using the plasma-enhanced atomic layer deposition. According to X-ray diffraction analysis and transmission electron microscopy, the layers are microcrystalline with a grain size of 20–30 nm and a preferred orientation (111). Raman spectra exhibit clearly distinguish the LO peak at 341.9 cm<sup>–1</sup>, which is characteristic of crystalline InP. Microcrystalline InP layers grown on fused silica substrates demonstrated a high photoconductivity of 2.3 Ω<sup>–1</sup> cm<sup>–1</sup> under solar spectrum AM1.5G (100 mW/cm<sup>2</sup>) illumination. The study of the growth of layers of binary compounds InP and GaP in one process of plasma-enhanced atomic layer deposition demonstrated the fundamental possibility of controlling the composition of InP/GaP digital alloy. The InP/GaP digital alloys are characterized by the coalescence of the LO peaks of InP (341.9 cm<sup>–1</sup>) and GaP (365 cm<sup>–1</sup>) in the Raman spectra. Increase of GaP component in the layer leads to boarding of this feature in the Raman spectra due to a shift of the edge towards the GaP peak (402 cm<sup>–1</sup>). A study of the optical properties by transmission and reflection measurements of microcrystalline InP/GaP digital alloy layers deposited on transparent substrates demonstrated the possibility of varying the optical gap in the range of 1.3–2 eV.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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