Semiconductors最新文献

英文中文

Luminescence in p–i–n Structures with Compensated Quantum Wells 带有补偿量子阱的 pi-n 结构中的发光现象

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050014

R. B. Adamov, G. A. Melentev, A. A. Podoskin, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko, I. V. Sedova, S. V. Sorokin, G. V. Klimko, I. S. Makhov, D. A. Firsov, V. A. Shalygin

Abstract

Photo- and electroluminescence in p–i–n structures with compensated GaAs/AlGaAs quantum wells have been studied. Two structures with different doping profiles were studied: with spatial separation of donors and acceptors (donors are localized in quantum wells, while acceptors are localized in barriers) and without it (both donors and acceptors are localized in quantum wells). The studies were carried out in the near-IR range at helium temperatures. Luminescence lines due to electron transitions from donor states to the first heavy-hole subband (D–hh1) and from the first electron subband to acceptor states (e1–A) have been identified. At large electric currents, the near-IR lasing due to these transitions was observed in the electroluminescence spectra. It has been found that the integrated lasing intensity related to the D–hh1 transitions in the structure without a spatial separation of donors and acceptors was three times higher than in the structure with the spatial separation. It is these transitions that ensure effective depletion of donor levels, which is important for the donor-assisted terahertz emission at e1–D electron transitions. The results of the work can be used in the development of electrically pumped terahertz emitters.

摘要研究了具有补偿砷化镓/砷化镓量子阱的 pi-n 结构中的光致发光和电致发光。研究了两种具有不同掺杂剖面的结构：有供体和受体空间分离（供体在量子阱中定位，而受体在势垒中定位）和无空间分离（供体和受体均在量子阱中定位）。研究是在氦温度下的近红外范围内进行的。确定了电子从供体态跃迁到第一个重空穴子带（D-hh1）以及从第一个电子子带跃迁到受体态（e1-A）所产生的发光线。在大电流条件下，电致发光光谱中观察到了由这些跃迁引起的近红外激光。研究发现，在没有供体和受体空间分隔的结构中，与 D-hh1 转换相关的综合激光强度是有空间分隔结构的三倍。正是这些跃迁确保了供体水平的有效耗竭，而这对于 e1-D 电子跃迁时的供体辅助太赫兹发射非常重要。这项研究成果可用于开发电泵太赫兹发射器。

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引用次数: 0

Photoelectric Characteristics and Surface Morphology of Cadmium Sulfide Modified by Iron Arachinate 铬酸铁修饰的硫化镉的光电特性和表面形态

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050063

P. G. Kharitonova, E. G. Glukhovskoy, A. V. Kozlowski, S. V. Stetsyura

Abstract

The influence of the nanoscale coating of iron arachinate (ArchFe) on the properties of CdS has been studied. We obtained changes in the morphology and potential of the surface, as well as in the photosensitivity of the CdS/ArchFe hybrid structure compared to unmodified CdS. We have shown the possibility of creating a heterophase structure with photosensitivity and properties of a semimagnetic semiconductor after annealing, which leads to sublimation of the organic component of the coating and diffusion of Fe deep into CdS, accompanied by the formation of nanosized FeS inclusions.

摘要研究了铬酸铁（ArchFe）纳米涂层对 CdS 性能的影响。与未改性的 CdS 相比，我们发现 CdS/ArchFe 混合结构的表面形态和电位以及光敏性都发生了变化。我们证明了在退火后形成具有光敏性和半磁性半导体特性的异相结构的可能性，退火导致涂层中有机成分的升华和铁向 CdS 深部的扩散，并伴随着纳米级 FeS 杂质的形成。

引用次数: 0

Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures 开发一种蚀刻 InAs/InAsSbP 光电二极管异质结构的方法

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050129

A. A. Pivovarova, N. D. Vinskaya, E. V. Kunitsyna, Yu. P. Yakovlev

Abstract

A method for etching the InAs/InAsSbP photodiode heterostructures using a new precision etchant HBr : KMnO₄ with a low constant etching rate was proposed. The change in the ratio of the etchant components makes it possible to set the etching rate in the range of 0.1–1.6 μm/min without deterioration of the quality of the side semiconductor surface. The use of the new etchant resulted in reducing the reverse dark currents of the InAs/InAsSbP photodiodes as well as the spread of dark current value from the device to the device. Samples with a sensitive area diameter of 300 μm demonstrate the minimum current density j = 5.7 × 10^–2 A/cm² and the typical current density j = 15.5 × 10^–2 A/cm². The maximum value of R₀ at room temperature is 1654 Ohm, while the R₀A product reaches 1.17 Ohm cm².

摘要提出了一种使用新型精密蚀刻剂 HBr : KMnO4 以较低的恒定蚀刻速率蚀刻 InAs/InAsSbP 光电二极管异质结构的方法。蚀刻液成分比例的改变使得蚀刻速率可以设定在 0.1-1.6 μm/min 的范围内，而不会降低侧面半导体表面的质量。使用新蚀刻剂后，InAs/InAsSbP 光电二极管的反向暗电流以及暗电流值在器件之间的扩散均有所降低。敏感区域直径为 300 μm 的样品显示出最小电流密度 j = 5.7 × 10-2 A/cm2，典型电流密度 j = 15.5 × 10-2 A/cm2。室温下 R0 的最大值为 1654 欧姆，而 R0A 的乘积达到 1.17 欧姆 cm2。

引用次数: 0

Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe 窄隙碲化镉汞中双库仑受体共振态的计算

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050166

M. S. Zholudev, D. V. Kozlov, S. V. Morozov

Abstract

Localized and resonant state energies of double Coulomb acceptor in narrow-gap HgCdTe alloys are calculated. The simulation is made with scattering matrix technique within spherically symmetric three-band Kane model taking into account conduction band and two top valence bands. It is shown that appearance one-particle state is highly unlikely when the two-particle state is resonant.

摘要计算了窄隙碲镉汞合金中双库仑受体的局域能和共振态能。模拟是在球形对称三带 Kane 模型中利用散射矩阵技术进行的，其中考虑了导带和两个顶价带。结果表明，当双粒子态发生共振时，出现单粒子态的可能性很小。

引用次数: 0

MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current MOCVD 生长用于低暗电流光电二极管的 InGaAs 非晶异质结构

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050130

I. V. Samartsev, B. N. Zvonkov, N. V. Baidus, A. B. Chigineva, K. S. Zhidyaev, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Rykov, S. M. Plankina, A. V. Nezhdanov, A. V. Ershov

Abstract

The epitaxial growth technique of InGaAs photodiode structures based on a digital InGaAs/GaAs metamorphic buffer layer by metalorganic chemical vapor deposition has been developed. The spectral dependence of the photocurrent of photodiodes based on the produced structures has a maximum at the 1.24 μm wavelength. The photosensitivity range at 10% of peak is 1.17–1.29 μm at room temperature. The current-voltage characteristics in the temperature range 9–300 K were investigated. It is shown that the dark current consists of generation-recombination and tunneling components. The dark current density at room temperature was 8 × 10^–5 A/cm² with a reverse bias of –5 V.

摘要通过金属有机化学气相沉积，开发了基于数字 InGaAs/GaAs 变质缓冲层的 InGaAs 光电二极管结构的外延生长技术。基于所制结构的光电二极管的光电流光谱依赖性在 1.24 μm 波长处具有最大值。在室温下，峰值 10%时的光敏范围为 1.17-1.29 μm。研究了 9-300 K 温度范围内的电流-电压特性。结果表明，暗电流由生成-重合和隧道分量组成。室温下的暗电流密度为 8 × 10-5 A/cm2，反向偏压为 -5 V。

引用次数: 0

Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode 功率硅二极管冲击电离切换过程的空间不均匀性

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050117

S. K. Lyubutin, V. E. Patrakov, S. N. Rukin, B. G. Slovikovsky, S. N. Tsyranov

Abstract

Voltage drop process in power Si diode switched to a conducting state by an impact-ionization wave, which is excited by overvoltage pulse with a subnanosecond rise time, has been investigated. In experiments, a reverse voltage pulse was applied to a diode with a diameter of 6 mm without preliminary reverse bias, which provided the average rate of voltage rise across the diode dU/dt in the range of 1–10 kV/ns. Numerical simulations showed that calculated and experimentally observed voltage waveforms are in good quantitative agreement in the case when an active area of the structure S_a, through which a switching current flows, increases with dU/dt value increasing. It was shown that at dU/dt < 2 kV/ns the active area tends to zero, and at dU/dt > 10 kV/ns it approaches the total area of the structure. Comparison with the results of similar studies shows that the increase in the active area of the structure with the increase in the S_a value does not depend on the material of the structure (silicon and gallium arsenide), the number of layers in the semiconductor structure (diodes and thyristors), and also on the value of the initial bias voltage.

摘要研究了由亚纳秒级上升时间的过压脉冲激发的冲击电离波将功率硅二极管切换到导电状态时的压降过程。在实验中，对一个直径为 6 毫米的二极管施加了一个反向电压脉冲，而没有进行初步的反向偏压，这样二极管上的平均电压上升率 dU/dt 为 1-10 kV/ns。数值模拟显示，当开关电流流经的结构有源区 Sa 随 dU/dt 值的增加而增大时，计算得出的电压波形与实验观察到的电压波形在数量上非常吻合。结果表明，在 dU/dt < 2 kV/ns 时，有功面积趋于零，而在 dU/dt > 10 kV/ns 时，有功面积接近结构的总面积。与类似研究结果的比较表明，随着 Sa 值的增加，结构有功面积的增加并不取决于结构的材料（硅和砷化镓）、半导体结构的层数（二极管和晶闸管）以及初始偏置电压的值。

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引用次数: 0

Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers 碲镉/碲镉锰和碲镉/碲镉镁异质结构的光致发光，其中量子阱被厚势垒隔开

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050051

N. G. Filosofov, G. V. Budkin, V. F. Agekyan, G. Karczewski, A. Yu. Serov, S. Yu. Verbin, I. V. Shtrom, A. N. Reznitsky

Abstract

The low-temperature photoluminescence (PL) and PL excitation (PLE) spectra of two systems of CdTe quantum wells (QWs) separated by CdMnTe and CdMgTe barriers 20 nm thick are studied. The experimental PL spectra are compared with calculations that take into account the exciton effect and the influence of internal strains. The scatter of our data does not exceed that expected for monolayer fluctuations of the QW width. In the PLE spectra of a thick QW, bands were found that correspond to the increase of PL from a thick QW upon excitation of a neighbor narrow QW. The mechanism of energy transfer between QWs separated by thick barriers is discussed.

摘要研究了被 20 nm 厚的碲镉(CdMnTe)和碲镉(CdMgTe)势垒隔开的两个碲镉量子阱(QWs)系统的低温光致发光(PL)和光致激发(PLE)光谱。实验聚勒光谱与考虑了激子效应和内部应变影响的计算结果进行了比较。我们的数据散度没有超出 QW 宽度单层波动的预期。在厚 QW 的 PLE 光谱中发现了一些带，这些带与邻近窄 QW 受激发时厚 QW 的 PL 增加相对应。本文讨论了被厚势垒隔开的 QW 之间的能量传递机制。

引用次数: 0

Change in Stoichiometry of ZnS Nanoparticles from the Energy of Action to Nano- and Femtosecond Laser Radiation 从纳米和飞秒激光辐射的作用能量看 ZnS 纳米粒子的化学计量学变化

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-16 DOI: 10.1134/s1063782624040043

A. S. Chernikov, D. A. Kochuev, A. A. Voznesenskaya, D. V. Abramov, K. S. Khorkov

Abstract

In this paper, experiments on laser ablation of ZnS in atmospheric air using laser pulses with different energies and durations have been carried out. In the process of ablation processing, zinc sulfide nanoparticles with different stoichiometric ratio of elements were obtained. By varying the parameters, it is possible to control changes in the size of nanoparticles and their composition. As a result of studies of synthesized nanoparticles, Raman scattering spectra, energy dispersion analysis results, and images of deposited nanoparticles were obtained. Conclusions are drawn about the suitability of nanopowder synthesis approaches for the subsequent production of stable colloidal solutions.

摘要本文利用不同能量和持续时间的激光脉冲，对大气中的硫化锌进行了激光烧蚀实验。在烧蚀处理过程中，获得了不同元素化学计量比的纳米硫化锌颗粒。通过改变参数，可以控制纳米颗粒的大小及其成分的变化。通过对合成纳米粒子的研究，获得了拉曼散射光谱、能量色散分析结果和沉积纳米粒子的图像。结论是纳米粉体合成方法适用于随后生产稳定的胶体溶液。

引用次数: 0

Triboelectric Generation by Friction of Heavily Doped Diamond Probes on a p-Si Surface 对硅表面摩擦重掺杂金刚石探针产生三电能

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-16 DOI: 10.1134/s1063782624040018

P. A. Alekseev, D. D. Sakhno, M. S. Dunaevskiy

Abstract

The generation of triboelectric current during friction of diamond probes on the surface of p-Si substrates with a native oxide layer was studied. The choice of probes with different doping, as well as substrates with different surface orientations, made it possible to establish the determining influence of the probe-surface work functions difference on the direction and value of the triboelectric current. The generation of triboelectric current occurs due to the tunneling of non-equilibrium charge carriers resulting from the chemical bonds breaking during friction. Under illumination conditions, an increase in the triboelectric current was observed, as well as the photocurrent appearance due to the charge carriers separation in the space charge region.

摘要研究了金刚石探针在具有原生氧化层的对硅衬底表面摩擦时产生的三电流。通过选择不同掺杂程度的探针以及不同表面取向的衬底，可以确定探针-表面功函数差对三电流方向和数值的决定性影响。摩擦过程中化学键断裂产生的非平衡电荷载流子隧穿导致了三电电流的产生。在光照条件下，观察到三电势电流增加，以及由于空间电荷区的电荷载流子分离而出现的光电流。

引用次数: 0

Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons 在砷化镓表面发现楔形金纳米团簇并利用质子偏振光谱学对其进行研究

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-16 DOI: 10.1134/s106378262404002x

V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, P. A. Alekseev, F. Yu. Soldatenkov, A. V. Nashchekin, S. A. Khakhulin, O. S. Komkov

Abstract

Using high-temperature annealing of thin gold nanofilms deposited onto the (001) surface of doped p-GaAs crystal with an ultrathin oxide layer, the nanoclusters of gold (Au₂Ga alloy) are fabricated. The gold clusters have the wedge shapes with rectangular bases elongated in [110] direction at GaAs(001) surface. This assertion is confirmed by the data of diagnostics of Au/p-GaAs(001) structures. Anisotropic plasmons localized on equally oriented wedge-shaped Au (Au₂Ga) clusters are investigated with the optical reflectance anisotropy spectroscopy and spectroscopy of polarized light reflection. It is shown that the spectral peak at the energy about 0.9 eV in the near infrared range is associated with plasmons polarized along the longest sides of clusters in crystallographic direction [110]. Another peak—at the energy of 1.8 eV—is due to plasmons having polarization in direction ([1bar {1}0]).

摘要在掺杂了超薄氧化层的 p-GaAs 晶体 (001) 表面沉积薄金纳米薄膜，通过高温退火，制备出纳米金簇（Au2Ga 合金）。金簇呈楔形，其矩形基底在 GaAs（001）表面沿 [110] 方向拉长。金/p-砷化镓（001）结构的诊断数据证实了这一论断。利用光学反射各向异性光谱和偏振光反射光谱研究了定位在等方向楔形金（Au2Ga）簇上的各向异性质子。结果表明，在近红外范围内能量约为 0.9 eV 的光谱峰与沿晶簇最长边极化的等离子体有关 [110]。另一个峰--能量为 1.8 eV--是由于质子在方向上偏振（[1bar {1}0]）。

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引用次数: 0

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全部 ACS Publications Elsevier ieeexplore Springer The Royal Society of Chemistry Wiley

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