首页 > 最新文献

Semiconductors最新文献

英文 中文
Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers 基于多个 InGaAs/GaAs 量子阱点层的宽带超发光二极管
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623030120
M. V. Maximov, Yu. M. Shernyakov, G. O. Kornyshov, O. I. Simchuk, N. Yu. Gordeev, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. M. Kulagina, A. E. Zhukov

Abstract

We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15–35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 μm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.

摘要 我们研究了基于 5 层或 7 层 InGaAs/GaAs 量子井点 (QWD) 的超发光二极管,其设计和有源区均已简化。各层 QWD 的发射峰相互偏移了 15-35 nm,以便在中心波长约为 1 μm 的超发光模式下提供尽可能宽的发射线,而不会出现明显的光谱衰减。对于活性区基于 5 层和 7 层 QWD 的超发光二极管,发射光谱半最大全宽的最大值分别为 92 纳米和 103 纳米。
{"title":"Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers","authors":"M. V. Maximov, Yu. M. Shernyakov, G. O. Kornyshov, O. I. Simchuk, N. Yu. Gordeev, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. M. Kulagina, A. E. Zhukov","doi":"10.1134/s1063782623030120","DOIUrl":"https://doi.org/10.1134/s1063782623030120","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15–35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 μm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"21 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films Hg0.7Cd0.3Te 外延薄膜的光学和结构特性
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623090026
D. A. Andryushchenko, M. S. Ruzhevich, A. M. Smirnov, N. L. Bazhenov, K. D. Mynbaev, V. G. Remesnik

Abstract

The results of comparative studies of the optical and structural properties of Hg0.7Cd0.3Te bulk crystals and epitaxial films grown by various methods are presented. The data of photoluminescence studies performed in the temperature range 4.2–300 K showed the similarity of the optical properties of different samples and indicated a significant disordering of the solid solution. According to X-ray diffraction data, however, the scale of the disordering was not directly related to the structural quality of the material. The prospects for using the material grown by various methods in optoelectronics applications are discussed.

摘要 本文介绍了对 Hg0.7Cd0.3Te 块状晶体和通过不同方法生长的外延薄膜的光学和结构特性进行比较研究的结果。在 4.2-300 K 温度范围内进行的光致发光研究数据显示,不同样品的光学特性相似,并表明固溶体存在明显的无序性。不过,根据 X 射线衍射数据,无序的程度与材料的结构质量没有直接关系。本文讨论了在光电子学应用中使用通过各种方法生长的材料的前景。
{"title":"Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films","authors":"D. A. Andryushchenko, M. S. Ruzhevich, A. M. Smirnov, N. L. Bazhenov, K. D. Mynbaev, V. G. Remesnik","doi":"10.1134/s1063782623090026","DOIUrl":"https://doi.org/10.1134/s1063782623090026","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of comparative studies of the optical and structural properties of Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te bulk crystals and epitaxial films grown by various methods are presented. The data of photoluminescence studies performed in the temperature range 4.2–300 K showed the similarity of the optical properties of different samples and indicated a significant disordering of the solid solution. According to X-ray diffraction data, however, the scale of the disordering was not directly related to the structural quality of the material. The prospects for using the material grown by various methods in optoelectronics applications are discussed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"60 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs 快速热退火对 GaAsN/GaAs 中氮原子分布的影响
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623090105
A. A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov, M. S. Sobolev

Abstract

The article investigates the effect of rapid thermal annealing of ternary GaAs1–xNx/GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown.

摘要 本文研究了 GaAs1-xNx/GaAs 三元固溶体快速热退火对氮原子在晶格中分布的影响。文章通过光致发光光谱和高分辨率 X 射线衍射仪对样品进行了研究。由于氮原子和砷原子的尺寸和电负性不匹配,氮不均匀地融入砷化镓晶格中。图中显示了快速热退火前后氮原子在砷化镓晶格中的排列选项。
{"title":"Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs","authors":"A. A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov, M. S. Sobolev","doi":"10.1134/s1063782623090105","DOIUrl":"https://doi.org/10.1134/s1063782623090105","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The article investigates the effect of rapid thermal annealing of ternary GaAs<sub>1–<i>x</i></sub>N<sub><i>x</i></sub>/GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"27 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SERS-Active Substrates Based on Embedded Ag Nanoparticles in c-Si: Modeling, Technology, Application 基于晶体硅中嵌入式银纳米颗粒的 SERS 活性基板:建模、技术与应用
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623040061
A. A. Ermina, N. S. Solodovchenko, K. V. Prigoda, V. S. Levitskii, S. I. Pavlov, Yu. A. Zharova

Abstract

A simple method for obtaining SiO2:Ag:Si and Ag:Si hybrid nanostructures is presented. High-temperature annealing of an Ag island film on the surface of c-Si makes it possible to preserve the plasmonic properties of Ag nanoparticles and protect them from external influences by coating them with a thermally grown layer of SiO2. The calculation of the electric field strength distribution in the structure with embedded Ag nanoparticles in c-Si demonstrates the presence of intrinsic “hot spots” at the corners of the nanoparticles, which leads to a maximum enhancement factor (~106) of Raman scattering. A numerical calculation of the dependence of the spectral position of a localized plasmon resonance on the geometry of structures can serve as a basis for their design in the future. Surface-enhanced Raman scattering showed reliable detection of the methyl orange from an aqueous solution at a concentration of <10–5 M.

摘要 介绍了一种获得 SiO2:Ag:Si 和 Ag:Si 混合纳米结构的简单方法。通过对晶体硅表面的银岛薄膜进行高温退火,可以保留银纳米粒子的质子特性,并通过在其表面镀上一层热生长的二氧化硅保护它们不受外界影响。对晶体硅中嵌入银纳米粒子的结构中电场强度分布的计算表明,在纳米粒子的边角处存在固有的 "热点",这导致拉曼散射的最大增强因子(约 106)。对局部等离子体共振的光谱位置与结构几何形状的关系进行数值计算,可作为未来结构设计的基础。表面增强拉曼散射显示,可以从浓度为 10-5 M 的水溶液中可靠地检测出甲基橙。
{"title":"SERS-Active Substrates Based on Embedded Ag Nanoparticles in c-Si: Modeling, Technology, Application","authors":"A. A. Ermina, N. S. Solodovchenko, K. V. Prigoda, V. S. Levitskii, S. I. Pavlov, Yu. A. Zharova","doi":"10.1134/s1063782623040061","DOIUrl":"https://doi.org/10.1134/s1063782623040061","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A simple method for obtaining SiO<sub>2</sub>:Ag:Si and Ag:Si hybrid nanostructures is presented. High-temperature annealing of an Ag island film on the surface of c-Si makes it possible to preserve the plasmonic properties of Ag nanoparticles and protect them from external influences by coating them with a thermally grown layer of SiO<sub>2</sub>. The calculation of the electric field strength distribution in the structure with embedded Ag nanoparticles in <i>c</i>-Si demonstrates the presence of intrinsic “hot spots” at the corners of the nanoparticles, which leads to a maximum enhancement factor (~10<sup>6</sup>) of Raman scattering. A numerical calculation of the dependence of the spectral position of a localized plasmon resonance on the geometry of structures can serve as a basis for their design in the future. Surface-enhanced Raman scattering showed reliable detection of the methyl orange from an aqueous solution at a concentration of &lt;10<sup>–5</sup> M.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"29 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots 基于量子阱、点和阱点的激光器中波长与增益之间的关系
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623080079
G. O. Kornyshov, N. Yu. Gordeev, Yu. M. Shernyakov, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov

Abstract

A systematic study of a series of InGaAs/GaAs lasers in the 1–1.3 μm optical range based on quantum wells (2D), quantum dots (0D), and quantum well-dots of transitional (0D/2D) dimensionality is presented. In a wide range of pump currents, the dependences of the lasing wavelength on the layer gain constant, a parameter which allows comparing lasers with different types of active region and various waveguide designs, are measured and analyzed. It is shown that the maximum optical gain of the quantum well-dots is significantly higher, and the range of lasing rawavelengths achievable in edge-emitting lasers without external resonators is wider than in lasers based on quantum wells and quantum dots.

摘要 对一系列基于量子阱(2D)、量子点(0D)和过渡(0D/2D)维度的量子阱点的 InGaAs/GaAs 激光器进行了系统研究。在很宽的泵浦电流范围内,测量并分析了激光波长与层增益常数的关系,该参数可用于比较具有不同类型有源区和不同波导设计的激光器。结果表明,量子阱点的最大光学增益明显更高,而且与基于量子阱和量子点的激光器相比,无外部谐振器的边缘发射激光器可达到的激光波长范围更宽。
{"title":"Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots","authors":"G. O. Kornyshov, N. Yu. Gordeev, Yu. M. Shernyakov, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov","doi":"10.1134/s1063782623080079","DOIUrl":"https://doi.org/10.1134/s1063782623080079","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A systematic study of a series of InGaAs/GaAs lasers in the 1–1<i>.</i>3 μm optical range based on quantum wells (2D), quantum dots (0D), and quantum well-dots of transitional (0D/2D) dimensionality is presented. In a wide range of pump currents, the dependences of the lasing wavelength on the layer gain constant, a parameter which allows comparing lasers with different types of active region and various waveguide designs, are measured and analyzed. It is shown that the maximum optical gain of the quantum well-dots is significantly higher, and the range of lasing rawavelengths achievable in edge-emitting lasers without external resonators is wider than in lasers based on quantum wells and quantum dots.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"25 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia 卤化物气相外延生长的氧化铟薄膜对氨的高灵敏度
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623030028
D. A. Almaev, A. V. Almaev, V. I. Nikolaev, P. N. Butenko, M. P. Scheglov, A. V. Chikiryaka, A. I. Pechnikov

The effect of H2, NH3, CO and O2 on the electrically conductive properties of In2O3 films grown by halide vapor phase epitaxy has been studied. In the temperature range of 200−550°C, In2O3 films demonstrate gas sensitivity to all considered gases, a relatively high operation speed and repeatability of cycles. The greatest response to NH3 was obtained, which exceeded 33 arb. units at a temperature of 400°C and a gas concentration of 1000 ppm−1. A qualitative mechanism of gas sensitivity of In2O3 films is proposed. The obtained gas-sensitive characteristics are compared with known In2O3 sensors based on various materials. It is shown that the method of halide vapor phase epitaxy makes it possible to obtain indium oxide films with high gas sensitivity.

研究了 H2、NH3、CO 和 O2 对通过卤化物气相外延生长的 In2O3 薄膜导电性能的影响。在 200-550°C 的温度范围内,In2O3 薄膜显示出对所有考虑气体的敏感性、相对较高的运行速度和循环的可重复性。对 NH3 的反应最大,在温度为 400°C 和气体浓度为 1000 ppm-1 时超过 33 arb.提出了 In2O3 薄膜对气体敏感的定性机制。将获得的气敏特性与基于各种材料的已知 In2O3 传感器进行了比较。结果表明,采用卤化物气相外延方法可以获得具有高气体灵敏度的氧化铟薄膜。
{"title":"High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia","authors":"D. A. Almaev, A. V. Almaev, V. I. Nikolaev, P. N. Butenko, M. P. Scheglov, A. V. Chikiryaka, A. I. Pechnikov","doi":"10.1134/s1063782623030028","DOIUrl":"https://doi.org/10.1134/s1063782623030028","url":null,"abstract":"<p>The effect of H<sub>2</sub>, NH<sub>3</sub>, CO and O<sub>2</sub> on the electrically conductive properties of In<sub>2</sub>O<sub>3</sub> films grown by halide vapor phase epitaxy has been studied. In the temperature range of 200−550°C, In<sub>2</sub>O<sub>3</sub> films demonstrate gas sensitivity to all considered gases, a relatively high operation speed and repeatability of cycles. The greatest response to NH<sub>3</sub> was obtained, which exceeded 33 arb. units at a temperature of 400°C and a gas concentration of 1000 ppm<sup>−1</sup>. A qualitative mechanism of gas sensitivity of In<sub>2</sub>O<sub>3</sub> films is proposed. The obtained gas-sensitive characteristics are compared with known In<sub>2</sub>O<sub>3</sub> sensors based on various materials. It is shown that the method of halide vapor phase epitaxy makes it possible to obtain indium oxide films with high gas sensitivity.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"19 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review) 高电场下 AIIIBV 半导体中热电荷载流子倍增的单极性和无噪声雪崩光电二极管(综述)
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623090130
M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev

Abstract

The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley AIIIBV semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary L- and X-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to monopolarity of hot charge carrier multiplication is proposed.

摘要 介绍了高电场下多谷 AIIIBV 半导体中冲击电离过程和电荷载流子加热的理论和实验研究结果,并讨论了它们与能带结构特征的关系。其中考虑到了附属 L 谷和 X 谷的作用、价带的复杂结构以及电离系数的取向依赖性。提出了一种选择空穴和电子电离系数比值大的半导体材料的新方法,以利用热电荷载流子倍增的单向性制造无噪声雪崩光电二极管。
{"title":"Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review)","authors":"M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev","doi":"10.1134/s1063782623090130","DOIUrl":"https://doi.org/10.1134/s1063782623090130","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley A<sup>III</sup>B<sup>V</sup> semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary <i>L</i>- and <i>X</i>-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to monopolarity of hot charge carrier multiplication is proposed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"26 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140155409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Manifestation of Dipole-Dipole and Quadrupole Interactions in the Correlator Spectrum of Optically Cooled Nuclear Spins of a Bulk n-Gaas Sample 块状 n-Gaas 样品光冷核自旋相关谱中的偶极-偶极和四极相互作用的表现形式
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623020112
V. M. Litvyak, R. V. Cherbunin, F. Yu. Soldatenkov, V. K. Kalevich, K. V. Kavokin

Abstract

In this work, we measured the correlator spectrum of optically cooled nuclear spin system of a bulk n-GaAs crystal in a zero magnetic field. The resulting spectrum is described by two contours, which can be interpreted as the participation of nuclear spins in two types of interactions. We analyzed the measured spectrum in the model for classical magnetic moments in the GaAs lattice. The analysis showed that the main contribution to the high-frequency part of the spectrum is due to the dipole-dipole interaction, and that to the low-frequency part is due to the quadrupole interaction.

摘要 在这项工作中,我们测量了块状 n-GaAs 晶体在零磁场中光冷却核自旋系统的相关谱。得到的光谱由两条等值线描述,可以解释为核自旋参与了两种类型的相互作用。我们分析了在砷化镓晶格经典磁矩模型中测量到的频谱。分析表明,频谱高频部分的主要贡献来自偶极-偶极相互作用,而低频部分的主要贡献来自四极相互作用。
{"title":"Manifestation of Dipole-Dipole and Quadrupole Interactions in the Correlator Spectrum of Optically Cooled Nuclear Spins of a Bulk n-Gaas Sample","authors":"V. M. Litvyak, R. V. Cherbunin, F. Yu. Soldatenkov, V. K. Kalevich, K. V. Kavokin","doi":"10.1134/s1063782623020112","DOIUrl":"https://doi.org/10.1134/s1063782623020112","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work, we measured the correlator spectrum of optically cooled nuclear spin system of a bulk <i>n</i>-GaAs crystal in a zero magnetic field. The resulting spectrum is described by two contours, which can be interpreted as the participation of nuclear spins in two types of interactions. We analyzed the measured spectrum in the model for classical magnetic moments in the GaAs lattice. The analysis showed that the main contribution to the high-frequency part of the spectrum is due to the dipole-dipole interaction, and that to the low-frequency part is due to the quadrupole interaction.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"23 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb) 关于基于 p-InAsSbP/n-InAs(Sb) 的 LED 中的加热机制
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623030193
A. L. Zakgeim, S. A. Karandashev, A. A. Klimov, R. E. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, A. E. Chernyakov

Abstract

Three main reasons for a temperature increase in activated p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSb/n-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1 × 3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics.

摘要 考虑了活化 p-InAsSbP/n-InAs/n-InAsSbP 和 p-InAsSbP/n-InAsSb/n-InAs 双异质结构温度升高的三个主要原因,利用中红外辐射强度的空间分布数据和电流电压特性,评估了非辐射欧杰尔重组、电子-声子相互作用和焦耳热对单个元件 LED 和倒装芯片二极管阵列(1 × 3)中二极管温度升高的贡献。
{"title":"On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)","authors":"A. L. Zakgeim, S. A. Karandashev, A. A. Klimov, R. E. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, A. E. Chernyakov","doi":"10.1134/s1063782623030193","DOIUrl":"https://doi.org/10.1134/s1063782623030193","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Three main reasons for a temperature increase in activated <i>p</i>-InAsSbP/<i>n</i>-InAs/<i>n</i>-InAsSbP and <i>p</i>-InAsSbP/<i>n</i>-InAsSb/<i>n</i>-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1 × 3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"12 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaAsP/InP Photovoltaic Converters for Narrowband Radiation 用于窄带辐射的 InGaAsP/InP 光伏转换器
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-03-15 DOI: 10.1134/s1063782623090142
N. S. Potapovich, M. V. Nakhimovich, V. P. Khvostikov

Abstract

Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 μm) based on InGaAsP/InP heterostructures with an epitaxial p–n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.

摘要 利用已完成的研究,开发并创建了基于具有外延 p-n 结的 InGaAsP/InP 异质结构的窄带辐射(λ ≈ 1.0-1.3 μm)光电转换器。通过液相外延技术,确定了在广泛的成分范围内创建与磷化铟同周期的高质量四元 InGaAsP 固溶体层所适用的技术体系。
{"title":"InGaAsP/InP Photovoltaic Converters for Narrowband Radiation","authors":"N. S. Potapovich, M. V. Nakhimovich, V. P. Khvostikov","doi":"10.1134/s1063782623090142","DOIUrl":"https://doi.org/10.1134/s1063782623090142","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 μm) based on InGaAsP/InP heterostructures with an epitaxial <i>p–n</i> junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"82 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Semiconductors
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1