Pub Date : 2024-09-16DOI: 10.1134/s1063782624040080
A. K. Kaveev, V. V. Fedorov, L. N. Dvoretckaya, S. V. Fedina, I. S. Mukhin
Abstract
We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determined: [0001]NWs || [111]Si, [(11bar {2}0)]NWs || [(1bar {1}0)]Si. A decrease of the radial growth rate and the formation of an axial heterojunction were revealed with the formation of thin (<100 nm) segments of the InAs1 –xPx solid solution and maintaining a sufficiently high partial pressure of the As flow (at least 50%).
{"title":"Formation of Single and Heterostructured Nanowires Based on InAs1 – xPx Solid Solutions on Si(111)","authors":"A. K. Kaveev, V. V. Fedorov, L. N. Dvoretckaya, S. V. Fedina, I. S. Mukhin","doi":"10.1134/s1063782624040080","DOIUrl":"https://doi.org/10.1134/s1063782624040080","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determined: [0001]<sub>NWs</sub> || [111]<sub>Si</sub>, [<span>(11bar {2}0)</span>]<sub>NWs</sub> || [<span>(1bar {1}0)</span>]<sub>Si</sub>. A decrease of the radial growth rate and the formation of an axial heterojunction were revealed with the formation of thin (<100 nm) segments of the InAs<sub>1 –</sub> <sub><i>x</i></sub>P<sub><i>x</i></sub> solid solution and maintaining a sufficiently high partial pressure of the As flow (at least 50%).</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"46 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040122
M. S. Ruzhevich, D. D. Firsov, O. S. Komkov, K. D. Mynbaev, V. S. Varavin, M. V. Yakushev
Abstract
The results of photoluminescence (PL) study of As-doped Cd0.3Hg0.7Te solid solutions layers grown by molecular beam epitaxy on a Si substrate are presented. Analysis of the PL spectra obtained at different temperatures and excitation laser powers allows one to judge the nature of the observed peaks. The activation of arsenic in annealed samples was established, as a result of which small acceptor levels are formed. The effectiveness of arsenic as an acceptor impurity for cadmium-mercury tellurides has been confirmed.
{"title":"Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te","authors":"M. S. Ruzhevich, D. D. Firsov, O. S. Komkov, K. D. Mynbaev, V. S. Varavin, M. V. Yakushev","doi":"10.1134/s1063782624040122","DOIUrl":"https://doi.org/10.1134/s1063782624040122","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of photoluminescence (PL) study of As-doped Cd<sub>0.3</sub>Hg<sub>0.7</sub>Te solid solutions layers grown by molecular beam epitaxy on a Si substrate are presented. Analysis of the PL spectra obtained at different temperatures and excitation laser powers allows one to judge the nature of the observed peaks. The activation of arsenic in annealed samples was established, as a result of which small acceptor levels are formed. The effectiveness of arsenic as an acceptor impurity for cadmium-mercury tellurides has been confirmed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"31 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040110
A. S. Pashchenko, O. V. Devitsky, M. L. Lunina
Abstract
Growth of a thin GalnAsBi film was carried out on a Si (001) substrate by pulsed laser deposition. The growth was carried out in the Volmer–Weber. The grains are preferentially monophase, but are separated by dislocation network, and in some areas, there are antiphase boundaries. Investigation of the real structure by transmission electron microscopy and X-ray diffractometry shows that stress relaxation occurred due to plastic shears by means of a nucleation of dislocations and a slip close-packed {111} planes, as well as twinning and a change in surface roughness. Using X-ray diffractometry, it was found that the GaInAsBi film has a lattice parameter of 5.856 Å. The root-mean-square roughness of the film surface, measured by atomic force microscopy, was 0.51 nm.
{"title":"Defects in GaInAsBi Epitaxial Films on Si(001) Substrates","authors":"A. S. Pashchenko, O. V. Devitsky, M. L. Lunina","doi":"10.1134/s1063782624040110","DOIUrl":"https://doi.org/10.1134/s1063782624040110","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Growth of a thin GalnAsBi film was carried out on a Si (001) substrate by pulsed laser deposition. The growth was carried out in the Volmer–Weber. The grains are preferentially monophase, but are separated by dislocation network, and in some areas, there are antiphase boundaries. Investigation of the real structure by transmission electron microscopy and X-ray diffractometry shows that stress relaxation occurred due to plastic shears by means of a nucleation of dislocations and a slip close-packed {111} planes, as well as twinning and a change in surface roughness. Using X-ray diffractometry, it was found that the GaInAsBi film has a lattice parameter of 5.856 Å. The root-mean-square roughness of the film surface, measured by atomic force microscopy, was 0.51 nm.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040146
M. M. Sobolev, F. Yu. Soldatenkov
Abstract—
High-voltage gradual p0–i–n0 junctions of AlxGa1 –xAs1 –ySby with x ~ 0.24 and y ~ 0.05 in the i‑region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the DX-center of the Si donor impurity, with a thermal activation energy Et = 414 meV, a capture cross section σn = 1.04 × 10–14 cm2, and a concentration Nd = 2.4 × 1015 cm–3. In the heterostructures studied, there were no deep levels associated with dislocations.
摘要-采用电容-电压特性法和深电平瞬态光谱法研究了 i 区 x ~ 0.24 和 y ~ 0.05 的 AlxGa1 - xAs1 - ySby 的高压渐变 p0-i-n0 结。结果表明，它们中的有效重组陷阱是硅供体杂质的 DX 中心，热活化能 Et = 414 meV，俘获截面 σn = 1.04 × 10-14 cm2，浓度 Nd = 2.4 × 1015 cm-3。在所研究的异质结构中，不存在与位错相关的深层位。
{"title":"Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs","authors":"M. M. Sobolev, F. Yu. Soldatenkov","doi":"10.1134/s1063782624040146","DOIUrl":"https://doi.org/10.1134/s1063782624040146","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>High-voltage gradual <i>p</i><sup>0</sup>–<i>i</i>–<i>n</i><sup>0</sup> junctions of Al<sub><i>x</i></sub>Ga<sub>1 –</sub> <sub><i>x</i></sub>As<sub>1 –</sub> <sub><i>y</i></sub>Sb<sub><i>y</i></sub> with <i>x</i> ~ 0.24 and <i>y</i> ~ 0.05 in the <i>i</i>‑region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the <i>DX</i>-center of the Si donor impurity, with a thermal activation energy <i>E</i><sub><i>t</i></sub> = 414 meV, a capture cross section σ<sub><i>n</i></sub> = 1.04 × 10<sup>–14</sup> cm<sup>2</sup>, and a concentration <i>N</i><sub><i>d</i></sub> = 2.4 × 10<sup>15</sup> cm<sup>–3</sup>. In the heterostructures studied, there were no deep levels associated with dislocations.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"97 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1134/s1063782624030084
L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov
Abstract
The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.
{"title":"Features of InP on Si Nanowire Growth","authors":"L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov","doi":"10.1134/s1063782624030084","DOIUrl":"https://doi.org/10.1134/s1063782624030084","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"30 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1134/s1063782624030114
O. O. Permyakova, A. E. Rogozhin, A. V. Myagonkikh, K. V. Rudenko
Abstract
The mechanism of resistive switching in Pt/HfO2(8 nm)/HfOXNY(4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive switching and complementary resistive switching. We demonstrate that resistive switching without external current compliance is possible. It is shown experimentally that the conductivity in the low-resistance state corresponds to the space-charge-limited current. A qualitative model is proposed that describes the transition from bipolar resistive switching to complementary resistive switching using Schottky barrier modulation at the metal-insulator interface. Based on this model, an explanation is given for the degradation of the low-resistance state during endurance measurements.
{"title":"Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures","authors":"O. O. Permyakova, A. E. Rogozhin, A. V. Myagonkikh, K. V. Rudenko","doi":"10.1134/s1063782624030114","DOIUrl":"https://doi.org/10.1134/s1063782624030114","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The mechanism of resistive switching in Pt/HfO<sub>2</sub>(8 nm)/HfO<sub><i>X</i></sub>N<sub><i>Y</i></sub>(4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive switching and complementary resistive switching. We demonstrate that resistive switching without external current compliance is possible. It is shown experimentally that the conductivity in the low-resistance state corresponds to the space-charge-limited current. A qualitative model is proposed that describes the transition from bipolar resistive switching to complementary resistive switching using Schottky barrier modulation at the metal-insulator interface. Based on this model, an explanation is given for the degradation of the low-resistance state during endurance measurements.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"6 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1134/s1063782624030023
N. A. Bekin, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin
Abstract
Using adiabatic and one-electron approximations, the rate of multiphonon relaxation of the 1s(T2) triplet of neutral magnesium donors in silicon is estimated. The dominant scattering processes associated with interaction with LO and LA phonons are taken into account. According to calculations, the rate of multiphonon relaxation at zero temperature is of the order of 1011 s–1.
摘要 利用绝热和单电子近似，估算了硅中性镁供体 1s(T2)三重子的多声子弛豫速率。考虑了与 LO 和 LA 声子相互作用相关的主要散射过程。根据计算结果，零温度下的多声子弛豫速率约为 1011 s-1。
{"title":"Multi-Phonon Relaxation of the 1s(T2) Triplet of Neutral Magnesium Donors in Silicon","authors":"N. A. Bekin, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin","doi":"10.1134/s1063782624030023","DOIUrl":"https://doi.org/10.1134/s1063782624030023","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Using adiabatic and one-electron approximations, the rate of multiphonon relaxation of the 1<i>s</i>(<i>T</i><sub>2</sub>) triplet of neutral magnesium donors in silicon is estimated. The dominant scattering processes associated with interaction with LO and LA phonons are taken into account. According to calculations, the rate of multiphonon relaxation at zero temperature is of the order of 10<sup>11</sup> s<sup>–1</sup>.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"23 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1134/s1063782624030151
L. A. Snigirev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Chaldyshev
Abstract
Initial stage of precipitate formation during post-growth annealing of nonstoichiometric GaAs and GaAs0.97Sb0.03 grown by low-temperature (150°C) MBE on GaAs (001) substrate with intermediate growth interruption and simultaneous heating up to 250°C was studied by transmission electron microscopy. Short-term intermediate heating despite the low temperature was revealed to result in the precipitation of larger particles during subsequent post-growth annealing compared to the material not subjected to such heating. This effect is explained by the huge concentration of excess arsenic in LT-GaAs and LT-GaAs0.97Sb0.03 grown at 150°C, enhanced diffusion due to the high concentration of nonequilibrium gallium vacancies, and non-threshold nucleation.
{"title":"Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs","authors":"L. A. Snigirev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Chaldyshev","doi":"10.1134/s1063782624030151","DOIUrl":"https://doi.org/10.1134/s1063782624030151","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Initial stage of precipitate formation during post-growth annealing of nonstoichiometric GaAs and GaAs<sub>0.97</sub>Sb<sub>0.03</sub> grown by low-temperature (150°C) MBE on GaAs (001) substrate with intermediate growth interruption and simultaneous heating up to 250°C was studied by transmission electron microscopy. Short-term intermediate heating despite the low temperature was revealed to result in the precipitation of larger particles during subsequent post-growth annealing compared to the material not subjected to such heating. This effect is explained by the huge concentration of excess arsenic in LT-GaAs and LT-GaAs<sub>0.97</sub>Sb<sub>0.03</sub> grown at 150<b>°</b>C, enhanced diffusion due to the high concentration of nonequilibrium gallium vacancies, and non-threshold nucleation.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"70 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1134/s1063782624030072
M. A. Kalinnikov, D. N. Lobanov, K. E. Kudryavtsev, B. A. Andreev, P. A. Yunin, L. V. Krasilnikova, A. V. Novikov, E. V. Skorokhodov, Z. F. Skorokhodov
Abstract
In this paper, the features of the formation of bulk InGaN layers with an indium content of ~ 60% in the immiscibility gap of InGaN ternary solid solutions by the method of molecular-beam epitaxy with plasma nitrogen activation are studied. The structures under study were grown on sapphire substrates, while the epitaxy temperature and the ratio of metal (In + Ga) and activated (atomic) nitrogen fluxes were varied. It has been demonstrated that the rates of thermal decomposition and phase separation for In0.6Ga0.4N ternary solutions depend nonmonotonically on the growth temperature in the range Tgr = 430–470°C. It is shown that InGaN thermal decomposition processes occur on the growth surface and lead to the appearance of surface phases of metallic In and binary InN, while phase separation leads to the appearance of InGaN phases of various compositions throughout the volume of the deposited InGaN layer. It is shown that, in the temperature range under study, phase separation is determined by surface diffusion, which can be suppressed by growth under highly nitrogen-enriched conditions, which made it possible to obtain homogeneous InGaN layers with an In content of In ~ 60% during high-temperature (Tgr = 470°C) growth. It is shown that the suppression of InGaN thermal decomposition processes is decisive in achieving effective interband luminescence of the obtained structures, while the presence of phase separation affects the radiative properties of InGaN layers to a lesser extent, at least in the region of low (T = 77 K) temperatures.
摘要 本文研究了利用等离子氮活化分子束外延方法在 InGaN 三元固溶体的不溶隙中形成铟含量约为 60% 的 InGaN 体层的特点。所研究的结构生长在蓝宝石衬底上，外延温度以及金属（In + Ga）和活化（原子）氮通量的比例各不相同。研究表明，在 Tgr = 430-470°C 的范围内，In0.6Ga0.4N 三元溶液的热分解率和相分离率与生长温度非单调相关。研究表明，InGaN 的热分解过程发生在生长表面，并导致金属 In 和二元 InN 表面相的出现，而相分离则导致在整个沉积 InGaN 层体积中出现不同成分的 InGaN 相。研究表明，在研究的温度范围内，相分离是由表面扩散决定的，在高富氮条件下生长可以抑制表面扩散，这使得在高温（Tgr = 470°C）生长过程中获得 In 含量为 In ~ 60% 的均匀 InGaN 层成为可能。研究表明，InGaN 热分解过程的抑制对于所获得结构实现有效的带间发光起着决定性作用，而相分离的存在对 InGaN 层辐射特性的影响较小，至少在低温（T = 77 K）区域是如此。
{"title":"Features of Formation of InxGa1 – xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation","authors":"M. A. Kalinnikov, D. N. Lobanov, K. E. Kudryavtsev, B. A. Andreev, P. A. Yunin, L. V. Krasilnikova, A. V. Novikov, E. V. Skorokhodov, Z. F. Skorokhodov","doi":"10.1134/s1063782624030072","DOIUrl":"https://doi.org/10.1134/s1063782624030072","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this paper, the features of the formation of bulk InGaN layers with an indium content of ~ 60% in the immiscibility gap of InGaN ternary solid solutions by the method of molecular-beam epitaxy with plasma nitrogen activation are studied. The structures under study were grown on sapphire substrates, while the epitaxy temperature and the ratio of metal (In + Ga) and activated (atomic) nitrogen fluxes were varied. It has been demonstrated that the rates of thermal decomposition and phase separation for In<sub>0.6</sub>Ga<sub>0.4</sub>N ternary solutions depend nonmonotonically on the growth temperature in the range <i>T</i><sub>gr</sub> = 430–470°C. It is shown that InGaN thermal decomposition processes occur on the growth surface and lead to the appearance of surface phases of metallic In and binary InN, while phase separation leads to the appearance of InGaN phases of various compositions throughout the volume of the deposited InGaN layer. It is shown that, in the temperature range under study, phase separation is determined by surface diffusion, which can be suppressed by growth under highly nitrogen-enriched conditions, which made it possible to obtain homogeneous InGaN layers with an In content of In ~ 60% during high-temperature (<i>T</i><sub>gr</sub> = 470°C) growth. It is shown that the suppression of InGaN thermal decomposition processes is decisive in achieving effective interband luminescence of the obtained structures, while the presence of phase separation affects the radiative properties of InGaN layers to a lesser extent, at least in the region of low (<i>T</i> = 77 K) temperatures.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"21 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1134/s1063782624030059
I. V. Ilkiv, V. V. Lendyashova, B. B. Borodin, V. G. Talalaev, T. Shugabaev, R. R. Reznik, G. E. Cirlin
Abstract
Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.
{"title":"Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them","authors":"I. V. Ilkiv, V. V. Lendyashova, B. B. Borodin, V. G. Talalaev, T. Shugabaev, R. R. Reznik, G. E. Cirlin","doi":"10.1134/s1063782624030059","DOIUrl":"https://doi.org/10.1134/s1063782624030059","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"45 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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