Pub Date : 2024-09-16DOI: 10.1134/s1063782624040158
A. M. Titova, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, A. V. Zaitsev, N. A. Alyabina, A. V. Kudrin, A. V. Zdoroveishev
Abstract
Ge/Si(001) heteroepitaxial layers were grown by HW CVD and in situ doped with Ga or Sb using a separate resistively heated Ge source containing one of these impurities. Sublimation of the germanium source gave a concentration of ~1 × 1019 cm–3 gallium atoms in the layers. The mode of introduction of this impurity into the epitaxial layers was investigated as a function of hot filament (Ta) temperature and growth temperature using C–V and Hall effect. To increase the maximum concentration of charge carriers in the Ge/Si(001) layers, a melt zone was formed on the Ge source during the growth of the layers, which made it possible to increase the concentration of impurities in the Ge layer by almost an order of magnitude.
摘要 Ge/Si(001)异质外延层是通过 HW CVD 法生长的，并使用含有其中一种杂质的单独电阻加热 Ge 源原位掺入 Ga 或 Sb。锗源升华后，层中的镓原子浓度为 ~1 × 1019 cm-3。利用 C-V 和霍尔效应，研究了这种杂质引入外延层的模式与热丝（Ta）温度和生长温度的函数关系。为了提高 Ge/Si(001)层中电荷载流子的最大浓度，在层的生长过程中在 Ge 源上形成了一个熔区，这使得 Ge 层中的杂质浓度提高了近一个数量级。
{"title":"Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source","authors":"A. M. Titova, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, A. V. Zaitsev, N. A. Alyabina, A. V. Kudrin, A. V. Zdoroveishev","doi":"10.1134/s1063782624040158","DOIUrl":"https://doi.org/10.1134/s1063782624040158","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Ge/Si(001) heteroepitaxial layers were grown by HW CVD and in situ doped with Ga or Sb using a separate resistively heated Ge source containing one of these impurities. Sublimation of the germanium source gave a concentration of ~1 × 10<sup>19</sup> cm<sup>–3</sup> gallium atoms in the layers. The mode of introduction of this impurity into the epitaxial layers was investigated as a function of hot filament (Ta) temperature and growth temperature using <i>C</i>–<i>V</i> and Hall effect. To increase the maximum concentration of charge carriers in the Ge/Si(001) layers, a melt zone was formed on the Ge source during the growth of the layers, which made it possible to increase the concentration of impurities in the Ge layer by almost an order of magnitude.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"37 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040134
V. A. Shutaev, V. G. Sidorov, E. A. Grebenshchikova, Yu. P. Yakovlev
Abstract
The electrical properties of Pd/InP Schottky diodes and Pd-layers deposited on glass substrate by thermal evaporation in vacuum, and placed in hydrogen medium containing 10–100 vol % of hydrogen, were studied. The current generation in Pd/InP Schottky diodes, as well as the decrease in resistance of Pd layers were observed in hydrogen medium. It is proposed that the current generation in the structures under study is due to free electrons as result of hydrogen atoms ionization. The current induced by these electrons exists in electric circuit until hydrogen is present in the environment. It is shown that the hydrogen current generators can be created based on the Pd/InP diode structure.
{"title":"Current Generation in Pd/InP Structures in Hydrogen Medium","authors":"V. A. Shutaev, V. G. Sidorov, E. A. Grebenshchikova, Yu. P. Yakovlev","doi":"10.1134/s1063782624040134","DOIUrl":"https://doi.org/10.1134/s1063782624040134","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The electrical properties of Pd/InP Schottky diodes and Pd-layers deposited on glass substrate by thermal evaporation in vacuum, and placed in hydrogen medium containing 10–100 vol % of hydrogen, were studied. The current generation in Pd/InP Schottky diodes, as well as the decrease in resistance of Pd layers were observed in hydrogen medium. It is proposed that the current generation in the structures under study is due to free electrons as result of hydrogen atoms ionization. The current induced by these electrons exists in electric circuit until hydrogen is present in the environment. It is shown that the hydrogen current generators can be created based on the Pd/InP diode structure.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"42 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s106378262404016x
E. Ya. Yarchuk, E. A. Vyacheslavova, M. Z. Shvarts, A. S. Gudovskikh
Abstract
The results of a study of the angular dependence of the reflectivity of black silicon structures with conical and filamentary nanowires, and a silicon surface with a textured pyramidal surface coated with an ITО layer are presented. The possibility to increase the annual electricity generation for solar cells based on black silicon has been demonstrated due to the weak angle dependence of the total reflectance. Compared to the textured pyramidal surface, the increase is 7.34 and 6.33% for the solar nanowires, respectively.
{"title":"Study of the Possibility to Increase Annual Electricity Production Using Silicon Solar Cells with a Nanostructured Surface","authors":"E. Ya. Yarchuk, E. A. Vyacheslavova, M. Z. Shvarts, A. S. Gudovskikh","doi":"10.1134/s106378262404016x","DOIUrl":"https://doi.org/10.1134/s106378262404016x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of a study of the angular dependence of the reflectivity of black silicon structures with conical and filamentary nanowires, and a silicon surface with a textured pyramidal surface coated with an ITО layer are presented. The possibility to increase the annual electricity generation for solar cells based on black silicon has been demonstrated due to the weak angle dependence of the total reflectance. Compared to the textured pyramidal surface, the increase is 7.34 and 6.33% for the solar nanowires, respectively.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040031
V. N. Bessolov, E. V. Konenkova, S. N. Rodin, A. V. Solomnikova
Abstract
The morphology of ALN layers grown by Metalorganic Chemical Vapor Deposition on nano-structured NP-Si(001) substrates coated with SiNx has been studied using atomic force microscopy. The AlN layers grown on the SiNx/NP-Si(100) template demonstrate a surface roughness 3.8 times less than those obtained on NP-Si(100), and are close to the roughness value for the AlN layer grown on a flat Si(111) substrate. It has been proposed a model to explain the differences in the formation of the surface morphology of AlN layers on the NP-Si(100) substrate and the SiNx/NP-Si(100) template.
{"title":"Surface Morphology of AlN Layers Grown on a Nano-Structured SiNx/Si(100) Template","authors":"V. N. Bessolov, E. V. Konenkova, S. N. Rodin, A. V. Solomnikova","doi":"10.1134/s1063782624040031","DOIUrl":"https://doi.org/10.1134/s1063782624040031","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The morphology of ALN layers grown by Metalorganic Chemical Vapor Deposition on nano-structured NP-Si(001) substrates coated with SiN<sub><i>x</i></sub> has been studied using atomic force microscopy. The AlN layers grown on the SiN<sub><i>x</i></sub>/NP-Si(100) template demonstrate a surface roughness 3.8 times less than those obtained on NP-Si(100), and are close to the roughness value for the AlN layer grown on a flat Si(111) substrate. It has been proposed a model to explain the differences in the formation of the surface morphology of AlN layers on the NP-Si(100) substrate and the SiN<sub><i>x</i></sub>/NP-Si(100) template.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"5 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040067
V. P. Kalinushkin, A. A. Gladilin, O. V. Uvarov, S. A. Mironov, N. N. Ilichev, M. I. Studenikin, M. S. Storozhevykh, E. M. Gavrishchuk, V. B. Ikonnikov, N. A. Timofeeva
Abstract
Using two-photon confocal microscopy in the spectral range of 0.44–0.73 μm, the spatial distribution of the luminescent characteristics of CVD-ZnSe doped with chromium using the HIP process was studied. It has been established that as a result of this process, four types of impurity-defect centers are formed in the crystal. It is shown that their formation involves point centers that form in the doping zone and diffuse deep into the crystal. Assumptions are made about the nature of these point centers.
摘要 利用双光子共聚焦显微镜在 0.44-0.73 μm 光谱范围内研究了采用 HIP 工艺掺杂铬的 CVD-ZnSe 发光特性的空间分布。结果表明，该工艺在晶体中形成了四种类型的杂质-缺陷中心。研究表明，它们的形成涉及在掺杂区形成并向晶体深处扩散的点中心。对这些点中心的性质进行了假设。
{"title":"Luminescence Characteristics of Chromium-Doped by High-Temperature Diffusion CVD-ZnSe","authors":"V. P. Kalinushkin, A. A. Gladilin, O. V. Uvarov, S. A. Mironov, N. N. Ilichev, M. I. Studenikin, M. S. Storozhevykh, E. M. Gavrishchuk, V. B. Ikonnikov, N. A. Timofeeva","doi":"10.1134/s1063782624040067","DOIUrl":"https://doi.org/10.1134/s1063782624040067","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Using two-photon confocal microscopy in the spectral range of 0.44–0.73 μm, the spatial distribution of the luminescent characteristics of CVD-ZnSe doped with chromium using the HIP process was studied. It has been established that as a result of this process, four types of impurity-defect centers are formed in the crystal. It is shown that their formation involves point centers that form in the doping zone and diffuse deep into the crystal. Assumptions are made about the nature of these point centers.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"75 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040079
A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin
Abstract
The dislocation structure of an AlN layer grown on a SiC substrate by sublimation was studied using transmission electron microscopy. The peculiarity of the growth method was the evaporation of the substrate during the growth of the layer to prevent its cracking. The purpose of the study was to identify the sources of threading dislocations in the AlN layer. Dislocation superjogs, which are sources of dislocations, were found in the layer. A connection between the formation of superjogs and the procedure of substrate evaporation is assumed.
{"title":"Dislocation Structure of AlN/SiC Templates Grown by Sublimation","authors":"A. E. Kalmykov, A. V. Myasoedov, L. M. Sorokin","doi":"10.1134/s1063782624040079","DOIUrl":"https://doi.org/10.1134/s1063782624040079","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The dislocation structure of an AlN layer grown on a SiC substrate by sublimation was studied using transmission electron microscopy. The peculiarity of the growth method was the evaporation of the substrate during the growth of the layer to prevent its cracking. The purpose of the study was to identify the sources of threading dislocations in the AlN layer. Dislocation superjogs, which are sources of dislocations, were found in the layer. A connection between the formation of superjogs and the procedure of substrate evaporation is assumed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"18 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040109
E. A. Lavrukhina, D. V. Khomitsky, A. V. Telezhnikov
Abstract
The model of the bound states in a double quantum dot formed by three magnetic barriers at the edge of two-dimensional topological insulator based on HgTe/CdTe quantum well is developed. The peculiarities of the energy spectrum, the probability density and the spin density of the quantum states are studied as a function of the orientation of the magnetization vector for the magnetic barriers. The wavefunction localization at the left and at the right of the anticrossing point in the spectrum is studied and the conclusion is made on the possibility of switching between the states with the localization area in different quantum dots by varying the polarization of the middle barrier.
{"title":"Formation of Bound States and Control of Their Localization in a Double Quantum Dot at the Edge of the Two-Dimensional Topological Insulator with Magnetic Barriers","authors":"E. A. Lavrukhina, D. V. Khomitsky, A. V. Telezhnikov","doi":"10.1134/s1063782624040109","DOIUrl":"https://doi.org/10.1134/s1063782624040109","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The model of the bound states in a double quantum dot formed by three magnetic barriers at the edge of two-dimensional topological insulator based on HgTe/CdTe quantum well is developed. The peculiarities of the energy spectrum, the probability density and the spin density of the quantum states are studied as a function of the orientation of the magnetization vector for the magnetic barriers. The wavefunction localization at the left and at the right of the anticrossing point in the spectrum is studied and the conclusion is made on the possibility of switching between the states with the localization area in different quantum dots by varying the polarization of the middle barrier.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"20 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040055
A. S. Dashkov, L. G. Gerchikov, L. I. Goray, N. A. Kostromin, A. D. Bouravleuv
Abstract
In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport characteristics. Based on the calculation results, the authors proposed an optimal design of the active region of a tunable THz radiation source.
{"title":"Terahertz Radiation Sources with an Active Region Based on Super-Multiperiod AlGaAs/GaAs Superlattices","authors":"A. S. Dashkov, L. G. Gerchikov, L. I. Goray, N. A. Kostromin, A. D. Bouravleuv","doi":"10.1134/s1063782624040055","DOIUrl":"https://doi.org/10.1134/s1063782624040055","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport characteristics. Based on the calculation results, the authors proposed an optimal design of the active region of a tunable THz radiation source.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"206 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142257929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040092
S. V. Khazanova, V. V. Savel’ev
Abstract
In this work a bilayer moiré graphene structure with a spatial period of energy parameters change of the ten nanometers order is considered. The layer misorientation angle effect and the energy gap parameter on the current-voltage characteristic of the structure is studied numerically. The transmission coefficients calculation through the structure demonstrates the appearance of energy gaps, the magnitude of which depends on the misorientation angle of the layers.
{"title":"Transport Characteristics Calculation of Bilayer Graphene with Different Misorientation Angle","authors":"S. V. Khazanova, V. V. Savel’ev","doi":"10.1134/s1063782624040092","DOIUrl":"https://doi.org/10.1134/s1063782624040092","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work a bilayer moiré graphene structure with a spatial period of energy parameters change of the ten nanometers order is considered. The layer misorientation angle effect and the energy gap parameter on the current-voltage characteristic of the structure is studied numerically. The transmission coefficients calculation through the structure demonstrates the appearance of energy gaps, the magnitude of which depends on the misorientation angle of the layers.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"37 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1134/s1063782624040171
D. A. Zdoroveyshchev, O. V. Vikhrova, Yu. A. Danilov, V. P. Lesnikov, A. V. Nezhdanov, A. E. Parafin, S. M. Plankina
Abstract
Pulsed laser deposition in vacuum at 220°C of GaAs layers heavily doped with Mn and/or Bi has been used to form nanostructures on i-GaAs (100) substrates. It is shown that, for the electrical activation of manganese, it is expedient to use subsequent annealing with an excimer laser pulse with a wavelength of 248 nm and a duration of 30 ns. The structures show an anomalous Hall effect with a hysteresis loop on the magnetic field dependence up to a Curie temperature of about ~70 K. Negative magnetoresistance is observed up to temperatures of ≈150 K. Bismuth does not prevent the activation of Mn atoms during annealing and contributes to an increase in the coercive field of the GaMnAs ferromagnetic semiconductor.
{"title":"Fabrication and Study of the Properties of GaAs Layers Doped with Bismuth","authors":"D. A. Zdoroveyshchev, O. V. Vikhrova, Yu. A. Danilov, V. P. Lesnikov, A. V. Nezhdanov, A. E. Parafin, S. M. Plankina","doi":"10.1134/s1063782624040171","DOIUrl":"https://doi.org/10.1134/s1063782624040171","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Pulsed laser deposition in vacuum at 220°C of GaAs layers heavily doped with Mn and/or Bi has been used to form nanostructures on <i>i</i>-GaAs (100) substrates. It is shown that, for the electrical activation of manganese, it is expedient to use subsequent annealing with an excimer laser pulse with a wavelength of 248 nm and a duration of 30 ns. The structures show an anomalous Hall effect with a hysteresis loop on the magnetic field dependence up to a Curie temperature of about ~70 K. Negative magnetoresistance is observed up to temperatures of ≈150 K. Bismuth does not prevent the activation of Mn atoms during annealing and contributes to an increase in the coercive field of the GaMnAs ferromagnetic semiconductor.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"15 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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