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Peculiarities of Photoinduced Heating of Perovskite Nanocrystals with Effective Anti-Stokes Photoluminescence under Near-Resonant Laser Excitation 近共振激光激发下具有有效反斯托克斯光致发光的过氧化物纳米晶体光诱导加热的特殊性
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020131
N. S. Pokryshkin, I. O. Sobina, A. A. Knysh, A. S. Eremina, A. V. Syuy, V. G. Yakunin, V. Yu. Timoshenko

Abstract

The optical properties of a photoluminescent material based on CsPbBr3 perovskite nanocrystals were studied in this work. The laser heating of the obtained samples was studied under three different regimes of laser excitation: the photoluminescence band appears in the Stokes region, in the anti-Stokes region, and coincides with the excitation line. It was found that under laser excitation of a certain wavelength, this material is able to demonstrate predominantly anti-Stokes (upconversion) photoluminescence. A method is proposed for estimating the PL quantum yield from data on absorption, photoheating, and the position of the photoluminescence band of a sample at two different wavelengths. The external photoluminescence quantum yield of CsPbBr3 nanocrystals was experimentally determined to be 91 ± 4%. The results of this work can be useful for the development of optical cooling technology and can be used in the development of laser devices based on perovskite materials.

摘要 这项工作研究了一种基于 CsPbBr3 包晶石纳米晶体的光致发光材料的光学特性。在三种不同的激光激发条件下，对获得的样品进行了激光加热研究：光致发光带出现在斯托克斯区、反斯托克斯区以及与激发线重合。研究发现，在一定波长的激光激发下，这种材料能够主要显示出反斯托克斯（上转换）光致发光。研究人员提出了一种方法，可根据样品在两种不同波长下的吸收、光热和光致发光带位置等数据估算光致发光量子产率。经实验测定，CsPbBr3 纳米晶体的外部光致发光量子产率为 91 ± 4%。这项工作的成果有助于光学冷却技术的发展，并可用于开发基于包晶材料的激光设备。
{"title":"Peculiarities of Photoinduced Heating of Perovskite Nanocrystals with Effective Anti-Stokes Photoluminescence under Near-Resonant Laser Excitation","authors":"N. S. Pokryshkin, I. O. Sobina, A. A. Knysh, A. S. Eremina, A. V. Syuy, V. G. Yakunin, V. Yu. Timoshenko","doi":"10.1134/s1063782624020131","DOIUrl":"https://doi.org/10.1134/s1063782624020131","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The optical properties of a photoluminescent material based on CsPbBr<sub>3</sub> perovskite nanocrystals were studied in this work. The laser heating of the obtained samples was studied under three different regimes of laser excitation: the photoluminescence band appears in the Stokes region, in the anti-Stokes region, and coincides with the excitation line. It was found that under laser excitation of a certain wavelength, this material is able to demonstrate predominantly anti-Stokes (upconversion) photoluminescence. A method is proposed for estimating the PL quantum yield from data on absorption, photoheating, and the position of the photoluminescence band of a sample at two different wavelengths. The external photoluminescence quantum yield of CsPbBr<sub>3</sub> nanocrystals was experimentally determined to be 91 ± 4%. The results of this work can be useful for the development of optical cooling technology and can be used in the development of laser devices based on perovskite materials.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"24 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Studies of Structural and Mechanical Properties of AlGaN Thin Films on Nano-SiC/Si Hybrid Substrates 纳米碳化硅/硅混合基底上氮化铝薄膜的结构和机械特性研究
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020064
A. S. Grashchenko, S. A. Kukushkin, S. S. Sharofidinov

Abstract

An experimental study of the structural characteristics of the surface and the parameters of hardness and elastic modulus of thin AlGaN films grown on nano-SiC/Si hybrid substrates was carried out. AlGaN layers on nano-SiC on Si with orientations (001), (011), and (111) have been investigated using atomic force microscopy and nanoindentation method. It is shown that the orientation of the Si substrate has a significant effect on the surface structure of AlGaN films and the elastic modulus parameter of AlGaN near the surface. The surface roughness and structural characteristics of AlGaN layers grown on nano-SiC on Si hybrid substrates have been determined. The elastic modulus parameters of AlGaN films near the surface and in the film volume have been measured. The hardness parameters of AlGaN thin films on nano-SiC on Si were experimentally determined.

摘要 对在纳米碳化硅/硅混合基底上生长的氮化铝薄膜的表面结构特征以及硬度和弹性模量参数进行了实验研究。使用原子力显微镜和纳米压痕法研究了硅基纳米碳化硅上取向为 (001)、(011) 和 (111) 的氮化铝层。结果表明，硅衬底的取向对氮化铝薄膜的表面结构和氮化铝表面附近的弹性模量参数有显著影响。测定了生长在硅基纳米碳化硅混合衬底上的氮化铝层的表面粗糙度和结构特征。测量了氮化铝薄膜近表面和薄膜内部的弹性模量参数。通过实验测定了硅基纳米碳化硅上氮化铝薄膜的硬度参数。
{"title":"Studies of Structural and Mechanical Properties of AlGaN Thin Films on Nano-SiC/Si Hybrid Substrates","authors":"A. S. Grashchenko, S. A. Kukushkin, S. S. Sharofidinov","doi":"10.1134/s1063782624020064","DOIUrl":"https://doi.org/10.1134/s1063782624020064","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>An experimental study of the structural characteristics of the surface and the parameters of hardness and elastic modulus of thin AlGaN films grown on nano-SiC/Si hybrid substrates was carried out. AlGaN layers on nano-SiC on Si with orientations (001), (011), and (111) have been investigated using atomic force microscopy and nanoindentation method. It is shown that the orientation of the Si substrate has a significant effect on the surface structure of AlGaN films and the elastic modulus parameter of AlGaN near the surface. The surface roughness and structural characteristics of AlGaN layers grown on nano-SiC on Si hybrid substrates have been determined. The elastic modulus parameters of AlGaN films near the surface and in the film volume have been measured. The hardness parameters of AlGaN thin films on nano-SiC on Si were experimentally determined.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure 无基底 InAsSbP/InAsSb 双异质结构中的空间电致发光分布和内部量子效率
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020106
B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybal’chenko

Abstract

In this work, we calculated the spatial distribution of the electroluminescence intensity taking into account the features of current spreading and taking into account the dependence of the internal quantum yield on the current density with the dominance of Auger recombination in flip-chip diodes based on InAsSbP/InAsSb double heterostructures (λ = 4.2 μm). By comparing the calculated data and the radiation distribution over the sample surface, the internal quantum efficiency of electroluminescence and its dependence on the current density at room temperature are determined.

摘要 在这项工作中，我们计算了基于 InAsSbP/InAsSb 双异质结构 (λ = 4.2 μm)的倒装芯片二极管中电致发光强度的空间分布，其中考虑到了电流扩散的特征，并考虑到了内部量子产率对电流密度的依赖性以及奥杰尔重组的主导性。通过比较计算数据和样品表面的辐射分布，确定了电致发光的内部量子效率及其与室温下电流密度的关系。
{"title":"Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure","authors":"B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybal’chenko","doi":"10.1134/s1063782624020106","DOIUrl":"https://doi.org/10.1134/s1063782624020106","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work, we calculated the spatial distribution of the electroluminescence intensity taking into account the features of current spreading and taking into account the dependence of the internal quantum yield on the current density with the dominance of Auger recombination in flip-chip diodes based on InAsSbP/InAsSb double heterostructures (λ <i>=</i> 4.2 μm). By comparing the calculated data and the radiation distribution over the sample surface, the internal quantum efficiency of electroluminescence and its dependence on the current density at room temperature are determined.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"9 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamics of Laser Generation in Single-Mode Microstripe Semiconductor Laser Bar (1065 nm) Operating in Gain-Swithching Mode 单模微条纹半导体激光条（1065 nm）在增益-收缩模式下工作时的激光生成动力学特性
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-09-02 DOI: 10.1134/s106378262402012x
A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, V. A. Krychkov, A. E. Grishin, N. A. Pikhtin

Abstract

The study investigates microstripe bars of optically isolated single-mode lasers based on heterostructures with double asymmetry, operating under sub-nanosecond current pulse pumping conditions. For microstripe bars with different filling densities of the emitting aperture, the effect of time delay dispersion of various stripes’ turn-on is demonstrated, with a maximum difference up to 50 ps. The developed microstripe bar designs demonstrate stable zero mode lasing. The microstripe bar consisting of 10 stripes with a 6 μm width and a stripe period of 20 μm demonstrates pulses with a peak power of 3 W and a duration of 140 ps under 0.4 ns current pulses pumping.

摘要 该研究调查了在亚纳秒电流脉冲泵浦条件下工作的基于双不对称异质结构的光隔离单模激光器的微条纹条。对于具有不同发射孔填充密度的微条纹条，各种条纹导通的时间延迟色散效应得到了证实，最大差异可达 50 ps。所开发的微带条设计显示出稳定的零模激光。由 10 条宽度为 6 μm、条纹周期为 20 μm 的条纹组成的微条纹条在 0.4 ns 电流脉冲泵浦下可产生峰值功率为 3 W、持续时间为 140 ps 的脉冲。
{"title":"Dynamics of Laser Generation in Single-Mode Microstripe Semiconductor Laser Bar (1065 nm) Operating in Gain-Swithching Mode","authors":"A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, V. A. Krychkov, A. E. Grishin, N. A. Pikhtin","doi":"10.1134/s106378262402012x","DOIUrl":"https://doi.org/10.1134/s106378262402012x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The study investigates microstripe bars of optically isolated single-mode lasers based on heterostructures with double asymmetry, operating under sub-nanosecond current pulse pumping conditions. For microstripe bars with different filling densities of the emitting aperture, the effect of time delay dispersion of various stripes’ turn-on is demonstrated, with a maximum difference up to 50 ps. The developed microstripe bar designs demonstrate stable zero mode lasing. The microstripe bar consisting of 10 stripes with a 6 μm width and a stripe period of 20 μm demonstrates pulses with a peak power of 3 W and a duration of 140 ps under 0.4 ns current pulses pumping.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"62 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective Area Epitaxy of InP/GaInP2 Quantum Dots from Metal-Organic Compounds 从金属有机化合物中选择性面积外延 InP/GaInP2 量子点
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020167
A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov

Abstract

Experiments on the growth of self-assembled InP/GaInP2 quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO2 and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.

摘要 利用 MOVPE 外延技术在介质掩膜 0.1-1 μm 孔径处生长自组装 InP/GaInP2 量子点的实验已经完成。提出并实施了实施升离光刻法的一系列操作。结果表明，可以获得直径为 100 nm 或更小的孔径。热沉积二氧化硅和湿法蚀刻相结合，可产生最小量的非辐射缺陷，并使孔径中的单个 QD 产生稳定的 PL 信号。
{"title":"Selective Area Epitaxy of InP/GaInP2 Quantum Dots from Metal-Organic Compounds","authors":"A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov","doi":"10.1134/s1063782624020167","DOIUrl":"https://doi.org/10.1134/s1063782624020167","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Experiments on the growth of self-assembled InP/GaInP<sub>2</sub> quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO<sub>2</sub> and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"16 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stress Analysis of GaN-Based Heterostructures on Silicon Substrates 硅衬底上氮化镓基异质结构的应力分析
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020015
D. S. Arteev, A. V. Sakharov, E. E. Zavarin, A. E. Nikolaev, M. A. Yagovkina, A. F. Tsatsulnikov

Abstract

Elastic stresses in AlN layers on silicon substrates of different thickness, as well as in multilayer (Al, Ga)N structures grown on AlN/Si templates, were investigated based on in-situ reflectometry/deflectometry data. It was found that tensile stresses arise during the growth of AlN, with their magnitude increasing with thicker the substrate. During the growth of multilayer step-graded (Al, Ga)N structures, all layers underwent compressive stress which decreased towards the surface. After cooling the structures to room temperature, some of the lower AlGaN layers remained entirely compressed, while another part experienced both compressive (in the lower part of each layer) and tensile (in the upper part of each layer) stresses.

摘要 根据原位反射仪/偏转仪数据，研究了不同厚度硅衬底上的氮化铝层以及在氮化铝/硅模板上生长的多层（Al, Ga）N 结构中的弹性应力。研究发现，在氮化铝的生长过程中会产生拉应力，其大小随基底厚度的增加而增大。在多层阶梯分级（Al，Ga）N 结构的生长过程中，所有层都会产生压应力，并向表面递减。将结构冷却到室温后，下层 AlGaN 的一些层仍然完全受压，而另一部分则同时承受压应力（在每层的下部）和拉应力（在每层的上部）。
{"title":"Stress Analysis of GaN-Based Heterostructures on Silicon Substrates","authors":"D. S. Arteev, A. V. Sakharov, E. E. Zavarin, A. E. Nikolaev, M. A. Yagovkina, A. F. Tsatsulnikov","doi":"10.1134/s1063782624020015","DOIUrl":"https://doi.org/10.1134/s1063782624020015","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Elastic stresses in AlN layers on silicon substrates of different thickness, as well as in multilayer (Al, Ga)N structures grown on AlN/Si templates, were investigated based on in-situ reflectometry/deflectometry data. It was found that tensile stresses arise during the growth of AlN, with their magnitude increasing with thicker the substrate. During the growth of multilayer step-graded (Al, Ga)N structures, all layers underwent compressive stress which decreased towards the surface. After cooling the structures to room temperature, some of the lower AlGaN layers remained entirely compressed, while another part experienced both compressive (in the lower part of each layer) and tensile (in the upper part of each layer) stresses.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"74 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Estimates of the Thermoelectric Power Factor of Graphene Encapsulated between 3D and 2D Semiconductor and Metal Slabs 封装在三维和二维半导体与金属板之间的石墨烯的热电功率因数的理论估计值
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020039
S. Yu. Davydov, O. V. Posrednik

Abstract

The conditions of extremeness of the conductivity, the Seebeck coefficient and the thermoelectric power factor values of encapsulated graphene, considered as a functions of the chemical potential, are de-termined. 3D and 2D semiconductors and transition metals are considered as slabs. The use of simple models allowed us to obtain analytical results. Numerical estimates were performed for bulk Si, Ge and 16 binary III‒V and II–VI compounds, six two-dimensional semiconductor transition metal dichalcagenides and all elements of the 3d-, 4d-, and 5d-series. Recommendations of slab materials allowing to maximize thermoelectric characteristics are given. Encapsulated two-layer graphene is also briefly discussed.

摘要 将封装石墨烯的电导率、塞贝克系数和热电功率因数值视为化学势的函数，对其极端条件进行了界定。三维和二维半导体及过渡金属被视为板坯。通过使用简单的模型，我们获得了分析结果。我们对硅块、Ge 和 16 种二元 III-V 和 II-VI 化合物、六种二维半导体过渡金属二掺杂物以及 3d、4d 和 5d 系列的所有元素进行了数值估算。此外，还推荐了可最大限度提高热电特性的板坯材料。此外，还简要讨论了封装两层石墨烯。
{"title":"Theoretical Estimates of the Thermoelectric Power Factor of Graphene Encapsulated between 3D and 2D Semiconductor and Metal Slabs","authors":"S. Yu. Davydov, O. V. Posrednik","doi":"10.1134/s1063782624020039","DOIUrl":"https://doi.org/10.1134/s1063782624020039","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The conditions of extremeness of the conductivity, the Seebeck coefficient and the thermoelectric power factor values of encapsulated graphene, considered as a functions of the chemical potential, are de-termined. 3D and 2D semiconductors and transition metals are considered as slabs. The use of simple models allowed us to obtain analytical results. Numerical estimates were performed for bulk Si, Ge and 16 binary III‒V and II–VI compounds, six two-dimensional semiconductor transition metal dichalcagenides and all elements of the 3<i>d-</i>, 4<i>d-</i>, and 5<i>d</i>-series. Recommendations of slab materials allowing to maximize thermoelectric characteristics are given. Encapsulated two-layer graphene is also briefly discussed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene in the Magnetic Field with Constant Gradient 恒定梯度磁场中的石墨烯
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020052
A. V. Germanenko, E. L. Rumyantsev

Abstract

The possibility of the carriers’ confinement in graphene by the magnetic field with constant gradient is considered. The obtained results are compared with the classical description of the plasma motion within magnetically neutral sheet in the earth geomagnetic tail. The consideration is carried out within the original strictly gauge invariant approach making use of the additional integral of motion, so called pseudo-momentum. The essential role of the tunneling effect distinguishing quantum case from classical behavior is revealed.

摘要 研究了载流子在石墨烯中被恒定梯度磁场禁锢的可能性。获得的结果与地球地磁尾部磁中性片内等离子体运动的经典描述进行了比较。研究采用了原始的严格量规不变方法，利用了额外的运动积分，即所谓的 "伪动量"。揭示了区分量子情况和经典行为的隧道效应的重要作用。
{"title":"Graphene in the Magnetic Field with Constant Gradient","authors":"A. V. Germanenko, E. L. Rumyantsev","doi":"10.1134/s1063782624020052","DOIUrl":"https://doi.org/10.1134/s1063782624020052","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The possibility of the carriers’ confinement in graphene by the magnetic field with constant gradient is considered. The obtained results are compared with the classical description of the plasma motion within magnetically neutral sheet in the earth geomagnetic tail. The consideration is carried out within the original strictly gauge invariant approach making use of the additional integral of motion, so called pseudo-momentum. The essential role of the tunneling effect distinguishing quantum case from classical behavior is revealed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"50 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a Single-Mode DFB Heterolaser with Inclined Radiation Output 开发具有倾斜辐射输出的单模 DFB 异质激光器
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010019
V. R. Baryshev, E. D. Egorova, N. S. Ginzburg, E. R. Kocharovskaya, A. M. Malkin, V. Yu. Zaslavsky, C. B. Morozov, A. S. Sergeev

Abstract

We study a possibility of implementing a single-mode DFB heterolaser with inclined (with respect to the surface of the structure) output of the generated radiation. We find the periodic dielectric structure shape that makes it possible to realize the distributed feedback for wavebeams propagating along the structure and, at the same time, to ensure the output of up to 70% of the generated radiation power in the inclined direction. Within the framework of the semiclassical quasi-optical model, the possibility of stationary lasing regimes is shown for finite lateral dimensions of the Bragg structure.

摘要 我们研究了实现单模 DFB 异质激光器的可能性，该激光器具有倾斜（相对于结构表面）的辐射输出。我们找到了周期性介质结构的形状，它可以实现波束沿结构传播的分布式反馈，同时确保在倾斜方向输出高达 70% 的辐射功率。在半经典准光学模型的框架内，展示了在布拉格结构的有限横向尺寸下产生静态激光的可能性。
{"title":"Development of a Single-Mode DFB Heterolaser with Inclined Radiation Output","authors":"V. R. Baryshev, E. D. Egorova, N. S. Ginzburg, E. R. Kocharovskaya, A. M. Malkin, V. Yu. Zaslavsky, C. B. Morozov, A. S. Sergeev","doi":"10.1134/s1063782624010019","DOIUrl":"https://doi.org/10.1134/s1063782624010019","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We study a possibility of implementing a single-mode DFB heterolaser with inclined (with respect to the surface of the structure) output of the generated radiation. We find the periodic dielectric structure shape that makes it possible to realize the distributed feedback for wavebeams propagating along the structure and, at the same time, to ensure the output of up to 70% of the generated radiation power in the inclined direction. Within the framework of the semiclassical quasi-optical model, the possibility of stationary lasing regimes is shown for finite lateral dimensions of the Bragg structure.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"1 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Components Ratio in Heterogeneous CdS-PbS Material on Photoelectric Characteristics and Their Stability over Time 异质 CdS-PbS 材料中的成分比例对光电特性及其随时间变化稳定性的影响
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
Semiconductors
Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010081
A. V. Kozlowski, N. A. Chufarova, D. R. Baybikova, A. A. Serdobintsev, S. V. Stetsyura

Abstract

The effect of the ratio of CdS and PbS components on the surface morphology, optical and photoelectric characteristics of films obtained by hydrochemical deposition has been studied. It is shown that, depending on the predominance of CdS or PbS in the film, the surface morphology changes significantly, which correlates with changes in the optical and photoelectric characteristics. An increase in the stability of photoelectric characteristics is demonstrated only by samples with a predominance of CdS. When PbS predominates, photoquenching and slow relaxation of the dark current after illumination are observed.

摘要 研究了 CdS 和 PbS 成分比例对通过水化学沉积获得的薄膜的表面形貌、光学和光电特性的影响。研究表明，根据薄膜中 CdS 或 PbS 所占比例的不同，表面形貌会发生显著变化，这与光学和光电特性的变化相关。只有 CdS 占主导地位的样品才能显示出光电特性稳定性的提高。当 PbS 占主导地位时，会观察到光淬灭和照明后暗电流的缓慢松弛。
{"title":"Influence of Components Ratio in Heterogeneous CdS-PbS Material on Photoelectric Characteristics and Their Stability over Time","authors":"A. V. Kozlowski, N. A. Chufarova, D. R. Baybikova, A. A. Serdobintsev, S. V. Stetsyura","doi":"10.1134/s1063782624010081","DOIUrl":"https://doi.org/10.1134/s1063782624010081","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The effect of the ratio of CdS and PbS components on the surface morphology, optical and photoelectric characteristics of films obtained by hydrochemical deposition has been studied. It is shown that, depending on the predominance of CdS or PbS in the film, the surface morphology changes significantly, which correlates with changes in the optical and photoelectric characteristics. An increase in the stability of photoelectric characteristics is demonstrated only by samples with a predominance of CdS. When PbS predominates, photoquenching and slow relaxation of the dark current after illumination are observed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"255 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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