Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003179
V. Tvarozek, Z. Řezníček, A. Jakubec, I. Novotný
A novel asymmetric ratio resistance method for the measuring of nonelectric quantity changes, e.g. temperature differences, is introduced. On the basis of that method the combined temperature sensor has been developed with high accuracy (relative error /spl les//spl plusmn/0.1%) and sensitivity adjustable to the desired value (C/sub r/= -500 ppm//spl deg/C). This principle is applicable in thermal biosensors as well as in microelectrochemical sensors and also in various physical microsensors.
{"title":"Asymmetric ratio sensors of nonelectric quantities","authors":"V. Tvarozek, Z. Řezníček, A. Jakubec, I. Novotný","doi":"10.1109/MIEL.2002.1003179","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003179","url":null,"abstract":"A novel asymmetric ratio resistance method for the measuring of nonelectric quantity changes, e.g. temperature differences, is introduced. On the basis of that method the combined temperature sensor has been developed with high accuracy (relative error /spl les//spl plusmn/0.1%) and sensitivity adjustable to the desired value (C/sub r/= -500 ppm//spl deg/C). This principle is applicable in thermal biosensors as well as in microelectrochemical sensors and also in various physical microsensors.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126279376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003181
L. Dobrescu, D. Dobrescu, A. Rusu, C. Ravariu
This paper presents the model for an electromechanical variable capacitor designed as an MOS capacitor with a beam. It studies the influences of the beam on the electrical characteristics of the capacitor.
{"title":"Mechanical influences on the electrical characteristics of the mobile gate MOS capacitors","authors":"L. Dobrescu, D. Dobrescu, A. Rusu, C. Ravariu","doi":"10.1109/MIEL.2002.1003181","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003181","url":null,"abstract":"This paper presents the model for an electromechanical variable capacitor designed as an MOS capacitor with a beam. It studies the influences of the beam on the electrical characteristics of the capacitor.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126305698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003209
A. Arshak, S.M. Zleetni, K. Arshak, J. Harris
Capacitive devices with Ag/CuPc/Ag sandwich structure were fabricated using screen-printing. The effects of /spl gamma/-radiation on their optical and electrical properties were investigated for the purpose of dosimetry applications. The energy values of the optical band gap showed irregular slight increase when the CuPc thick films were irradiated. The as-printed (unexposed to /spl gamma/-rays) and irradiated Ag/CuPc/Ag devices demonstrated a Schottky conduction mechanism. The absorbance and the capacitance of the CuPc thick films exhibited highly consistent linear response to the exposure of /spl gamma/-radiation.
{"title":"Effect of /spl gamma/-rays on the optical and electrical properties of copper-phthalocyanine thick films","authors":"A. Arshak, S.M. Zleetni, K. Arshak, J. Harris","doi":"10.1109/MIEL.2002.1003209","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003209","url":null,"abstract":"Capacitive devices with Ag/CuPc/Ag sandwich structure were fabricated using screen-printing. The effects of /spl gamma/-radiation on their optical and electrical properties were investigated for the purpose of dosimetry applications. The energy values of the optical band gap showed irregular slight increase when the CuPc thick films were irradiated. The as-printed (unexposed to /spl gamma/-rays) and irradiated Ag/CuPc/Ag devices demonstrated a Schottky conduction mechanism. The absorbance and the capacitance of the CuPc thick films exhibited highly consistent linear response to the exposure of /spl gamma/-radiation.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129061185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003339
B. Loncar, P. Osmokrović, S. Stankovic
The aim of this work was to examine the influence of the number of activations, i.e. over-voltage pulses, on the aging of over-voltage protection elements. Both nonlinear (gas-filled surge arresters (GFSA), varistors, over-voltage diodes), and linear (capacitors-constituents of filters) over-voltage protection elements were tested. The instruments used allowed reliable measurements, and 1000 consecutive activations were carried out. A current pulse, (I/sup max/=13 A, 16 A; T/sub 1//T/sub 2/=8/20 /spl mu/s) for non-linear elements and a double exponential over voltage pulse (1.2/50 /spl mu/s) of amplitude 320 V, 480 V and 640 V for capacitors was used. The experimental results showed that the over-voltage diodes are the most reliable elements, considering changes of characteristics as a result of aging. It was observed however that varistors, GFSAs and capacitors suffered noticeable changes in characteristics.
{"title":"Aging of the over-voltage protection components","authors":"B. Loncar, P. Osmokrović, S. Stankovic","doi":"10.1109/MIEL.2002.1003339","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003339","url":null,"abstract":"The aim of this work was to examine the influence of the number of activations, i.e. over-voltage pulses, on the aging of over-voltage protection elements. Both nonlinear (gas-filled surge arresters (GFSA), varistors, over-voltage diodes), and linear (capacitors-constituents of filters) over-voltage protection elements were tested. The instruments used allowed reliable measurements, and 1000 consecutive activations were carried out. A current pulse, (I/sup max/=13 A, 16 A; T/sub 1//T/sub 2/=8/20 /spl mu/s) for non-linear elements and a double exponential over voltage pulse (1.2/50 /spl mu/s) of amplitude 320 V, 480 V and 640 V for capacitors was used. The experimental results showed that the over-voltage diodes are the most reliable elements, considering changes of characteristics as a result of aging. It was observed however that varistors, GFSAs and capacitors suffered noticeable changes in characteristics.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124317672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003342
M. Lutovac, D. Tosic
We present an original software DFSYM for symbolic computation of transfer function of digital filters and linear time-invariant discrete-time Systems. The software uses standard MATLAB commands and MATLAB SYMBOLIC TOOLBOX. The transfer function is derived directly from the filter schematic created by DrawFilt. DFSYM finds transfer function of filters with arbitrary real or complex coefficients. Filter designers, practitioners, students, researchers, educators and scientists can use DFSYM to evaluate, validate, document or verify the existing filter realizations or to explore, get insight to and optimize the filters they work on.
{"title":"Symbolic computation of digital filter transfer function using MATLAB","authors":"M. Lutovac, D. Tosic","doi":"10.1109/MIEL.2002.1003342","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003342","url":null,"abstract":"We present an original software DFSYM for symbolic computation of transfer function of digital filters and linear time-invariant discrete-time Systems. The software uses standard MATLAB commands and MATLAB SYMBOLIC TOOLBOX. The transfer function is derived directly from the filter schematic created by DrawFilt. DFSYM finds transfer function of filters with arbitrary real or complex coefficients. Filter designers, practitioners, students, researchers, educators and scientists can use DFSYM to evaluate, validate, document or verify the existing filter realizations or to explore, get insight to and optimize the filters they work on.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120943752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003313
E. Atanassova, N. S. Boltovets, E. Kolyadina, R. Konakova, J. Koprinarova, L. Matveeva, V. V. Milenin, V. F. Mitin, V. V. Shynkarenko, D. I. Voitsikhovskyi
We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm/sup 2/, and processing duration of 10 s) in Ta/sub 2/O/sub 5/-p-Si heterosystem and MIS structures with Ta/sub 2/O/sub 5/ insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta/sub 2/O/sub 5//p-Si interface becomes essentially ordered.
{"title":"Structural-phase ordering in Ta/sub 2/O/sub 5/-p-Si heterosystem enhanced by microwave processing","authors":"E. Atanassova, N. S. Boltovets, E. Kolyadina, R. Konakova, J. Koprinarova, L. Matveeva, V. V. Milenin, V. F. Mitin, V. V. Shynkarenko, D. I. Voitsikhovskyi","doi":"10.1109/MIEL.2002.1003313","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003313","url":null,"abstract":"We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm/sup 2/, and processing duration of 10 s) in Ta/sub 2/O/sub 5/-p-Si heterosystem and MIS structures with Ta/sub 2/O/sub 5/ insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta/sub 2/O/sub 5//p-Si interface becomes essentially ordered.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121042316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003167
P. Igić, P. Mawby, M. Towers, S. Batcup
An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.
{"title":"Thermal model of power semiconductor devices for electro-thermal circuit simulations","authors":"P. Igić, P. Mawby, M. Towers, S. Batcup","doi":"10.1109/MIEL.2002.1003167","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003167","url":null,"abstract":"An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122965205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003146
P. Mawby, C. Kampouris, A. Koh
This paper presents recent advances in the development of MOS power devices fabricated in silicon carbide. In particular it focuses on the quality of the interface between the oxide and the semiconductor. This is particularly important as it has a serious detrimental effect on MOSFET performance when excessive interface states exist. Careful growth and characterisation of a number of samples have been performed, resulting in samples with the best interface state density reported to date.
{"title":"Advances in silicon carbide MOS technology","authors":"P. Mawby, C. Kampouris, A. Koh","doi":"10.1109/MIEL.2002.1003146","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003146","url":null,"abstract":"This paper presents recent advances in the development of MOS power devices fabricated in silicon carbide. In particular it focuses on the quality of the interface between the oxide and the semiconductor. This is particularly important as it has a serious detrimental effect on MOSFET performance when excessive interface states exist. Careful growth and characterisation of a number of samples have been performed, resulting in samples with the best interface state density reported to date.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115525922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003336
E. Milovanovic, N. Stojanovic, I. Milovanovic, T. Tokic, M. Stojcev
The major features of adopting systolic arrays (SA) for special purpose processing architectures are: simple and regular design, concurrency in communications, and balancing computation with the I/O. In this paper we synthesize a family of hexagonal arrays, SA(r), that implement matrix multiplication. We have observed that the execution time of a hexagonal array, which has a minimal number of processing elements (PE) for a given problem size, can be reduced if the number of PEs is increased. Since the execution time and the number of PEs are the two most important performance measures of the systolic array, we take their product AT/sup 2/, AT/sup 2/=/spl Omega//sub r/(n)T/sub exe//sup 2/, to compare the arrays from this family. With respect to this performance measure, the best array is obtained for r=[n/2], where n is a dimension of square matrices while r indicates the extension, in terms of rows, of the array that has minimal number of processing elements for a given problem size.
{"title":"Optimizing AT/sup 2/ measure of hexagonal systolic arrays","authors":"E. Milovanovic, N. Stojanovic, I. Milovanovic, T. Tokic, M. Stojcev","doi":"10.1109/MIEL.2002.1003336","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003336","url":null,"abstract":"The major features of adopting systolic arrays (SA) for special purpose processing architectures are: simple and regular design, concurrency in communications, and balancing computation with the I/O. In this paper we synthesize a family of hexagonal arrays, SA(r), that implement matrix multiplication. We have observed that the execution time of a hexagonal array, which has a minimal number of processing elements (PE) for a given problem size, can be reduced if the number of PEs is increased. Since the execution time and the number of PEs are the two most important performance measures of the systolic array, we take their product AT/sup 2/, AT/sup 2/=/spl Omega//sub r/(n)T/sub exe//sup 2/, to compare the arrays from this family. With respect to this performance measure, the best array is obtained for r=[n/2], where n is a dimension of square matrices while r indicates the extension, in terms of rows, of the array that has minimal number of processing elements for a given problem size.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115424278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-08-07DOI: 10.1109/MIEL.2002.1003168
R. Siemieniec, J. Lutz, W. Sudkamp, R. Herzer
Irradiation techniques are widely used for carrier lifetime control, especially in power devices, because of their good reproducibility. Simulation of these devices is however lacking due to missing or incomplete recombination center data, despite the availability of suitable recombination models. In this work, we used center data estimated by DLTS and lifetime measurements for the simulation of electron radiated devices and compare the results with the measured device characteristics.
{"title":"Parameters of radiation-induced centers for simulation of irradiated power devices","authors":"R. Siemieniec, J. Lutz, W. Sudkamp, R. Herzer","doi":"10.1109/MIEL.2002.1003168","DOIUrl":"https://doi.org/10.1109/MIEL.2002.1003168","url":null,"abstract":"Irradiation techniques are widely used for carrier lifetime control, especially in power devices, because of their good reproducibility. Simulation of these devices is however lacking due to missing or incomplete recombination center data, despite the availability of suitable recombination models. In this work, we used center data estimated by DLTS and lifetime measurements for the simulation of electron radiated devices and compare the results with the measured device characteristics.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132639072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：