Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908814
Yaqun Wang, Jun Zhang, Yi Shi, Lijia Pan
It is an urgent need to develop low-cost, scalable-fabricating materials, technologies and equipments that are capable to separate oil-water mixtures efficiently. Traditional separation technologies are discontinuous and expensive. Large-scale separation devices are difficult to be prepared. Here we report stainless steel wire mesh coated with Superhydrophobic and superoleophilic coating, which can be easily prepared by solution method. Our mesh can selectively and effectively (>95%) separate oil from oil/water mixtures, such as gasoline, diesel, vegetable oil and kerosene/water mixtures without any extrapower. The separation equipment can be designed to achieve separate and continuous collection of oil and water. We anticipate that our separation method will have numerous applications, including emergency treatment of spill accidents of oil and derivative products, wastewater treatment and fuel purification.
{"title":"An accessible superhydrophobic coating with nanostructure for continuously oil/water separation","authors":"Yaqun Wang, Jun Zhang, Yi Shi, Lijia Pan","doi":"10.1109/NEMS.2014.6908814","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908814","url":null,"abstract":"It is an urgent need to develop low-cost, scalable-fabricating materials, technologies and equipments that are capable to separate oil-water mixtures efficiently. Traditional separation technologies are discontinuous and expensive. Large-scale separation devices are difficult to be prepared. Here we report stainless steel wire mesh coated with Superhydrophobic and superoleophilic coating, which can be easily prepared by solution method. Our mesh can selectively and effectively (>95%) separate oil from oil/water mixtures, such as gasoline, diesel, vegetable oil and kerosene/water mixtures without any extrapower. The separation equipment can be designed to achieve separate and continuous collection of oil and water. We anticipate that our separation method will have numerous applications, including emergency treatment of spill accidents of oil and derivative products, wastewater treatment and fuel purification.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"40 10 1","pages":"306-310"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82840657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908847
Haider A. F. Almurib, T. N. Kumar, F. Lombardi
This paper presents a memristor-based Look-Up Table (LUT) for FPGAs. The proposed memory utilizes memristors as storage elements and NMOS transistors for selection. New WRITE and READ operations are proposed; the proposed LUT requires no additional circuit to handle the WRITE 1 (0) operation for both the word and bit lines. Also, it requires a RESTORE pulse only for the READ 0 operation. The WRITE operation of the proposed method requires three power lines (+Vdd, -Vdd and Gnd) and a RESTORE pulse only for the READ 0 operation, thus accomplishing savings of 25% for both the number of power lines and READ time when compared to previous methods. The proposed LUT is simulated using LTSPICE and extensive simulation results are presented with respect to different operational features, such as normalized state parameter of the memristance, pulse width, LUT size and MOSFET feature size. These results show that the proposed scheme offers superior performance compared with other existing memristor-based schemes found in the technical literature for FPGAs.
{"title":"A memristor-based LUT for FPGAs","authors":"Haider A. F. Almurib, T. N. Kumar, F. Lombardi","doi":"10.1109/NEMS.2014.6908847","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908847","url":null,"abstract":"This paper presents a memristor-based Look-Up Table (LUT) for FPGAs. The proposed memory utilizes memristors as storage elements and NMOS transistors for selection. New WRITE and READ operations are proposed; the proposed LUT requires no additional circuit to handle the WRITE 1 (0) operation for both the word and bit lines. Also, it requires a RESTORE pulse only for the READ 0 operation. The WRITE operation of the proposed method requires three power lines (+Vdd, -Vdd and Gnd) and a RESTORE pulse only for the READ 0 operation, thus accomplishing savings of 25% for both the number of power lines and READ time when compared to previous methods. The proposed LUT is simulated using LTSPICE and extensive simulation results are presented with respect to different operational features, such as normalized state parameter of the memristance, pulse width, LUT size and MOSFET feature size. These results show that the proposed scheme offers superior performance compared with other existing memristor-based schemes found in the technical literature for FPGAs.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"22 1","pages":"448-453"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83253927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908864
Po-Li Chen, Wei-Jei Peng, Han-Ting Chen, H. Kuo, Yu-Hsin Lin, Yu-Hsiang Tang, C. Hsiao, M. Shiao
This paper presents the illumination uniformity study on the reading area for a well-designed reflective LED desk light lamp by placing diffuser plate with optical simulation technique. The investigation for the performance of intensity and uniformity was performed and discussed by changing various types of diffuser plate with and without microstructures to reflect and spread light, including pyramid, sphere and cylinder. Due to the development of microstructures on diffuser plate, the light intensity distribution was uniformed on the reading area. In addition, the diffusion and spreading effect from a rough surface with round-corner shape microstructures was better than that with tapering corner microstructures. The illumination uniformity was strongly influenced by the shape of microstructure on reflective diffuser plate. The optimal design with cylinder-shape microstructure and without gaps between each element had better performance in this study; the illumination uniformity was increased from 8 % to 57 % and the enhancement was 86 %.
{"title":"The illumination uniformity study of diffuser plates for reflective LED desk lighting","authors":"Po-Li Chen, Wei-Jei Peng, Han-Ting Chen, H. Kuo, Yu-Hsin Lin, Yu-Hsiang Tang, C. Hsiao, M. Shiao","doi":"10.1109/NEMS.2014.6908864","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908864","url":null,"abstract":"This paper presents the illumination uniformity study on the reading area for a well-designed reflective LED desk light lamp by placing diffuser plate with optical simulation technique. The investigation for the performance of intensity and uniformity was performed and discussed by changing various types of diffuser plate with and without microstructures to reflect and spread light, including pyramid, sphere and cylinder. Due to the development of microstructures on diffuser plate, the light intensity distribution was uniformed on the reading area. In addition, the diffusion and spreading effect from a rough surface with round-corner shape microstructures was better than that with tapering corner microstructures. The illumination uniformity was strongly influenced by the shape of microstructure on reflective diffuser plate. The optimal design with cylinder-shape microstructure and without gaps between each element had better performance in this study; the illumination uniformity was increased from 8 % to 57 % and the enhancement was 86 %.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"12 1","pages":"525-529"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91110273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908846
Yuting Li, Wentao Zhang, Fang Li
The monitoring of increased intracranial pressure (ICP) is desirable in the diagnosis and treatment of patients suffering from traumatic brain injury (TBI) or hydrocephalus, for it can provide an insight into the mechanism of the head injury. Therefore we developed a novel miniature diaphragm-based Fabry-Perot (F-P) sensor for ICP measurement. The presented sensor exhibits a linear response to the applied pressure over the range of 0~25 kPa, with a sensitivity of 39.2 nm/kPa and a resolution of 0.13 kPa. In addition, we offered two kinds of packaging methods. Compared with the sophisticated process involved in making a commercially available fiber optic sensor for ICP monitoring, the reported sensor is simple to be fabricated and low-cost.
{"title":"A miniature Fabry-Perot pressure sensor for intracranial pressure measurement","authors":"Yuting Li, Wentao Zhang, Fang Li","doi":"10.1109/NEMS.2014.6908846","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908846","url":null,"abstract":"The monitoring of increased intracranial pressure (ICP) is desirable in the diagnosis and treatment of patients suffering from traumatic brain injury (TBI) or hydrocephalus, for it can provide an insight into the mechanism of the head injury. Therefore we developed a novel miniature diaphragm-based Fabry-Perot (F-P) sensor for ICP measurement. The presented sensor exhibits a linear response to the applied pressure over the range of 0~25 kPa, with a sensitivity of 39.2 nm/kPa and a resolution of 0.13 kPa. In addition, we offered two kinds of packaging methods. Compared with the sophisticated process involved in making a commercially available fiber optic sensor for ICP monitoring, the reported sensor is simple to be fabricated and low-cost.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"20 1","pages":"444-447"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84349852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908773
Yuanqi Zeng, B. Tao, Z. Yin
The molecular orientation has a great impact on the performance of organic thin film transistors (OTFTs) and undesired orientation also appears. There is a critical size nc of the orientation transformation from lateral to normal for pentacene (5A) on the a-SiO2 surface during the vapor-phase deposition process. Molecular dynamics (MD) simulations are performed to get the critical size and gain insight into the transformation mechanism. The results suggest that the delicate interplay between the interaction of molecule-molecule and the interaction of molecule-substrate appears to govern the growth and morphology of pentacene. When n<;nc, the 5A molecules prefer to form lateral oriented cluster with (1-10) surface parallel to the substrate driven by the interaction of molecule-substrate. For n>nc the normal orientation with (001) surface parallel to the substrate becomes stable because the interaction of molecule-molecule holds the dominant position. And a competitive factor Δ between the interaction of molecule-molecule and the interaction of molecule-substrate is established to characterize the results.
{"title":"Molecular dynamics simulation of molecular orientation transformation of pentacene on a-SiO2","authors":"Yuanqi Zeng, B. Tao, Z. Yin","doi":"10.1109/NEMS.2014.6908773","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908773","url":null,"abstract":"The molecular orientation has a great impact on the performance of organic thin film transistors (OTFTs) and undesired orientation also appears. There is a critical size nc of the orientation transformation from lateral to normal for pentacene (5A) on the a-SiO2 surface during the vapor-phase deposition process. Molecular dynamics (MD) simulations are performed to get the critical size and gain insight into the transformation mechanism. The results suggest that the delicate interplay between the interaction of molecule-molecule and the interaction of molecule-substrate appears to govern the growth and morphology of pentacene. When n<;nc, the 5A molecules prefer to form lateral oriented cluster with (1-10) surface parallel to the substrate driven by the interaction of molecule-substrate. For n>nc the normal orientation with (001) surface parallel to the substrate becomes stable because the interaction of molecule-molecule holds the dominant position. And a competitive factor Δ between the interaction of molecule-molecule and the interaction of molecule-substrate is established to characterize the results.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"43 1","pages":"121-125"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89793900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908777
M. Angira, G. Sundaram, K. Rangra
This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, interdigitation of signal lines with actuation electrodes is used to make a compact device. A bridge structure anchored in between ground planes and attached to two cantilevers on either side has been used to implement the switch structure. This novel structure is used to inductively tune the isolation peaks in X and K bands which is not possible with conventional approach. The designed switch shows an insertion loss of 0.01 dB to 0.11 dB over the frequency range from 1 to 25 GHz. Isolation of 34.71, 34.33, and 40.7 dB has been observed at 10.4 GHz, 11 GHz and 21.4 GHz when bridge is electro-statically actuated with either left, right or both cantilevers in the down state respectively. The bridge structure shows a pull-in voltage of 12.25 V and switching time of 34.40 μs whereas left and right cantilevers have 7.5 V and 57 μs. The designed device can be useful for the future multiband communication applications.
{"title":"A novel interdigitated, inductively tuned, capacitive shunt RF — MEMS switch for X and K bands applications","authors":"M. Angira, G. Sundaram, K. Rangra","doi":"10.1109/NEMS.2014.6908777","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908777","url":null,"abstract":"This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, interdigitation of signal lines with actuation electrodes is used to make a compact device. A bridge structure anchored in between ground planes and attached to two cantilevers on either side has been used to implement the switch structure. This novel structure is used to inductively tune the isolation peaks in X and K bands which is not possible with conventional approach. The designed switch shows an insertion loss of 0.01 dB to 0.11 dB over the frequency range from 1 to 25 GHz. Isolation of 34.71, 34.33, and 40.7 dB has been observed at 10.4 GHz, 11 GHz and 21.4 GHz when bridge is electro-statically actuated with either left, right or both cantilevers in the down state respectively. The bridge structure shows a pull-in voltage of 12.25 V and switching time of 34.40 μs whereas left and right cantilevers have 7.5 V and 57 μs. The designed device can be useful for the future multiband communication applications.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"43 1","pages":"139-142"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74609659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908825
Rongjun Cheng, Yulong Zhao, Cun Li
This paper aims to examine the feasibility of a novel resonant pressure sensor, which is realized by introducing a double-ended tuning fork (DETF) quartz resonator into a silicon substrate. Theoretical model and finite element simulation results are given to provide support for the scheme. Sensor prototypes are fabricated based on micromachining technologies. Experimental setup for testing is established to detect the resonant frequency, in which an excitation circuit is designed to drive the quartz resonator into vibration. Preliminary experiment results demonstrate that the non-linearity of the sensor is 0.036%FS while the sensitivity is approximately 452Hz/kPa. The results indicate that this resonant pressure sensor features excellent performances. Therefore, the feasibility of this scheme is basically verified, which provides a solution for low pressure measurement.
{"title":"Feasibility study of a pressure sensor based on double-ended tuning fork quartz resonator","authors":"Rongjun Cheng, Yulong Zhao, Cun Li","doi":"10.1109/NEMS.2014.6908825","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908825","url":null,"abstract":"This paper aims to examine the feasibility of a novel resonant pressure sensor, which is realized by introducing a double-ended tuning fork (DETF) quartz resonator into a silicon substrate. Theoretical model and finite element simulation results are given to provide support for the scheme. Sensor prototypes are fabricated based on micromachining technologies. Experimental setup for testing is established to detect the resonant frequency, in which an excitation circuit is designed to drive the quartz resonator into vibration. Preliminary experiment results demonstrate that the non-linearity of the sensor is 0.036%FS while the sensitivity is approximately 452Hz/kPa. The results indicate that this resonant pressure sensor features excellent performances. Therefore, the feasibility of this scheme is basically verified, which provides a solution for low pressure measurement.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"3 1","pages":"354-357"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74401446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908837
P. Ma, Kai Zhang, Wengang Wu
Combining the advanced silicon etch system (ASETM) with electron beam lithography (EBL), we utilize the silicon sidewall scallops to fabricate 3D nano-fence matrixes for nanofluidic channels. We acquire the scallop size and the effective range of nano mask width for the formation of nano-fences under a fixed etch recipe. We then realize the controllability of fabricating silicon fences by simply varying the nano mask width. The fence matrixes make the micro-channel into integrated nano-channels, which will be very useful for fluid purification, segregation and bias application in certain fluid detection.
{"title":"Novel 3D nano-fence matrixes for integrated nanofluidic channels","authors":"P. Ma, Kai Zhang, Wengang Wu","doi":"10.1109/NEMS.2014.6908837","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908837","url":null,"abstract":"Combining the advanced silicon etch system (ASETM) with electron beam lithography (EBL), we utilize the silicon sidewall scallops to fabricate 3D nano-fence matrixes for nanofluidic channels. We acquire the scallop size and the effective range of nano mask width for the formation of nano-fences under a fixed etch recipe. We then realize the controllability of fabricating silicon fences by simply varying the nano mask width. The fence matrixes make the micro-channel into integrated nano-channels, which will be very useful for fluid purification, segregation and bias application in certain fluid detection.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"81 1","pages":"403-406"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84681460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908852
V. Ranganathan, S. Rajgopal, M. Mehregany, S. Bhunia
The trend of miniaturization, along with modern microfabrication facilities, has led to the development of nanoelectromechanical systems (NEMS) switches for use in low power and harsh environment applications. Dimensional scaling is attractive to improve integration density and operating voltage of NEMS devices. However, its effect on switch performance, leakage and dynamic power as well as practical limits on dimensional scaling are not well studied. Existing work in this area models the scaling trend and device performance based on parameters like voltage and dimensions. Although, most of them do not consider the effects of some nanoscale phenomena (surface forces, tunneling current) and leakage currents at G and D (off-state leakage), which can greatly affect circuit performance. This paper reports modeling and analysis of scaling effects and practical limits of scaling in cantilever-structured NEMS switches considering effects at nanoscale dimensions. It also analyzes the effects from a circuit level perspective, which corresponds to the end application of these NEMS structures. The goal of this paper is to establish a working range of dimensions and parameters which could result in reliable operating NEMS devices that can be incorporated into circuits.
{"title":"Analysis of practical scaling limits in nanoelectromechanical switches","authors":"V. Ranganathan, S. Rajgopal, M. Mehregany, S. Bhunia","doi":"10.1109/NEMS.2014.6908852","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908852","url":null,"abstract":"The trend of miniaturization, along with modern microfabrication facilities, has led to the development of nanoelectromechanical systems (NEMS) switches for use in low power and harsh environment applications. Dimensional scaling is attractive to improve integration density and operating voltage of NEMS devices. However, its effect on switch performance, leakage and dynamic power as well as practical limits on dimensional scaling are not well studied. Existing work in this area models the scaling trend and device performance based on parameters like voltage and dimensions. Although, most of them do not consider the effects of some nanoscale phenomena (surface forces, tunneling current) and leakage currents at G and D (off-state leakage), which can greatly affect circuit performance. This paper reports modeling and analysis of scaling effects and practical limits of scaling in cantilever-structured NEMS switches considering effects at nanoscale dimensions. It also analyzes the effects from a circuit level perspective, which corresponds to the end application of these NEMS structures. The goal of this paper is to establish a working range of dimensions and parameters which could result in reliable operating NEMS devices that can be incorporated into circuits.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"1 1","pages":"471-476"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85510285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-04-13DOI: 10.1109/NEMS.2014.6908809
T. Santra, C. Lee, Srabani Kar, J. Borana, Pen-Cheng Wang, F. Tseng
Today single cell research is a great interest to analyze cell to cell or cell to environment behavior with their intracellular compounds, where bulk measurement can provide average value. To deliver biomolecules precise and localized way into single living cell with high transfection rate and high cell viability is a challenging and promisible task for biological and therapeutic research. In this report, we present a nano-localized single cell nano-electroporation technique, where electroporation take place in a very precise and localized area on a single cell membrane to achieve high efficient delivery with high cell viability. We fabricated 60nm gap with 40 nm triangular Indium Tin Oxide (ITO) based nano-eletcrode tip, which can intense electric field in a nano-localized area of a single cell to permeabilize cell membrane and deliver exogenous biomolecules from outside to inside of the cell. This device successfully deliver dyes, proteins into single cell with high cell viability (98%). The process not only control precise delivery mechanism into single cell with membrane reversibility, but also it can provide special, temporal and qualitative dosage control, which might be beneficial for therapeutic and biological cell studies.
{"title":"Nanolocalized single cell membrane nanoelectroporation","authors":"T. Santra, C. Lee, Srabani Kar, J. Borana, Pen-Cheng Wang, F. Tseng","doi":"10.1109/NEMS.2014.6908809","DOIUrl":"https://doi.org/10.1109/NEMS.2014.6908809","url":null,"abstract":"Today single cell research is a great interest to analyze cell to cell or cell to environment behavior with their intracellular compounds, where bulk measurement can provide average value. To deliver biomolecules precise and localized way into single living cell with high transfection rate and high cell viability is a challenging and promisible task for biological and therapeutic research. In this report, we present a nano-localized single cell nano-electroporation technique, where electroporation take place in a very precise and localized area on a single cell membrane to achieve high efficient delivery with high cell viability. We fabricated 60nm gap with 40 nm triangular Indium Tin Oxide (ITO) based nano-eletcrode tip, which can intense electric field in a nano-localized area of a single cell to permeabilize cell membrane and deliver exogenous biomolecules from outside to inside of the cell. This device successfully deliver dyes, proteins into single cell with high cell viability (98%). The process not only control precise delivery mechanism into single cell with membrane reversibility, but also it can provide special, temporal and qualitative dosage control, which might be beneficial for therapeutic and biological cell studies.","PeriodicalId":22566,"journal":{"name":"The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"23 1","pages":"285-288"},"PeriodicalIF":0.0,"publicationDate":"2014-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86728254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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