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Reaction-diffusion study of electron-beam-induced contamination growth 电子束诱导污染生长的反应扩散研究。
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-05-27 DOI: 10.1016/j.ultramic.2024.113995
Erich Müller , Katharina Adrion , Milena Hugenschmidt , Dagmar Gerthsen

A time-dependent reaction-diffusion model was elaborated to better understand the dynamical growth of contamination on surfaces illuminated by an electron beam. The goal of this work was to fully describe the flow of hydrocarbon molecules, denoted as contaminants, and their polymerization in the irradiated area with the number of parameters reduced to a minimum necessary. It was considered that the diffusion process of contaminants is driven by the gradient of their surface density generated by the impact of a circular homogeneous electron beam. The contribution of the residual gas atmosphere in the instrument was described by the tendency to reestablish the initial equilibrium surface density of contaminants before irradiation. The four unknown parameters of the model, the electron interaction cross-section, the diffusion coefficient, the initial surface density of contaminants, and the frequency of the supply of contaminants from the residual gas atmosphere were determined by comparing the modeled contamination growth with experimental results. The experiments were designed such that the influence of the single parameters could be unequivocally separated. To follow the dynamical evolution of the system and to generate time-resolved distinct experimental data, successive contamination measurements were performed at short time intervals up to 20 min. The local height and shape of the grown contamination were quantified by evaluating high-angle annular dark-field (HAADF) scanning-transmission- electron-microcopy (STEM) image intensities and corresponding Monte-Carlo simulations. Our model also applies to nonhomogeneous initial conditions like the reduced local surface density of contaminants after previous beam-showering. The dynamic analyses of this process might provide hints regarding the relative size of the contaminant molecules and also indicate some measures for the reduction of contamination growth.

为了更好地理解在电子束照射下表面污染物的动态生长过程,我们建立了一个随时间变化的反应扩散模型。这项工作的目标是全面描述碳氢化合物分子(称为污染物)在辐照区域的流动及其聚合过程,并将参数数量减少到必要的最低水平。研究认为,污染物的扩散过程是由圆形均质电子束撞击产生的表面密度梯度驱动的。仪器中的残余气体环境的作用是重建辐照前污染物初始平衡表面密度的趋势。模型的四个未知参数,即电子相互作用截面、扩散系数、污染物的初始表面密度以及残余气体环境中污染物的供应频率,是通过比较污染增长模型和实验结果确定的。实验设计的目的是明确区分单个参数的影响。为了跟踪系统的动态演变并生成时间分辨的实验数据,在最长 20 分钟的短时间间隔内连续进行了污染测量。通过评估高角度环形暗场(HAADF)扫描-透射-电子显微镜(STEM)图像强度和相应的蒙特卡洛模拟,量化了生长污染的局部高度和形状。我们的模型还适用于非均质初始条件,如先前光束喷射后污染物的局部表面密度降低。对这一过程的动态分析可能会为污染物分子的相对大小提供提示,并指出一些减少污染物增长的措施。
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引用次数: 0
Direct investigations of interactions between nucleolins and aptamers on pancreatic cancer and normal cells by atomic force microscopy 利用原子力显微镜直接研究胰腺癌细胞和正常细胞中核蛋白与适配体之间的相互作用。
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-05-15 DOI: 10.1016/j.ultramic.2024.113986
Xinyu Li , Longyun Chen , Sudong Kong , Haijian Zhong , Feng Jiang , Weidong Zhao

Nucleolin is overexpressed on the surface of pancreatic cancer cells and are regarded as the remarkable therapeutic target. Aptamers are capable of binding the external domain of nucleolin on the cell surface with high affinity and specificity. But nucleolin has not been localized on pancreatic cancer cells at very high spatial resolution, and the interactions between nucleolin and aptamers have not been investigated at very high force resolution level. In this work, nucleolin was localized on pancreatic cancer and normal cells by aptamers (9FU-AS1411-NH2, AS1411-NH2 and CRONH2) in Single Molecule Recognition Imaging mode of Atomic Force Microscopy. There are plenty of nucleolin on the surfaces of pancreatic cancer cells (area percentage about 5 %), while there are little nucleolin on the surfaces of normal cells. The interactions between three types of aptamers and nucleolins on the surfaces of pancreatic cancer cells were investigated by Single Molecule Force Spectroscopy. The unbinding forces of nucleolins-(9FU-AS1411-NH2) are larger than nucleolins-(AS1411-NH2). The dissociation activation energy on nucleolin-(9FU-AS1411-NH2) is higher than nucleolin-(AS1411-NH2), which indicates that the former complex is more stable and harder to dissociate than the later complex. There are no unbinding forces between nucleolin and CRONH2. All these demonstrate that nucleolin was localized on pancreatic cancer and normal cells at single molecule level quantitatively, and the interactions (unbinding forces and kinetics) between nucleolin and aptamers were studied at picoNewton level. The approaches and results of this work will pave new ways in the investigations of nucleolin and aptamers, and will also be useful in the studies on other proteins and their corresponding aptamers.

核苷酸在胰腺癌细胞表面过度表达,被视为重要的治疗靶点。Aptamers能以高亲和力和特异性结合细胞表面的核素蛋白外部结构域。但目前还没有以极高的空间分辨率对胰腺癌细胞上的核素蛋白进行定位,也没有以极高的力分辨率研究核素蛋白与适配体之间的相互作用。本研究在原子力显微镜的单分子识别成像模式下,用适配体(9FU-AS1411-NH2、AS1411-NH2 和 CRONH2)定位了胰腺癌细胞和正常细胞上的核素。胰腺癌细胞表面有大量的核素蛋白(面积百分比约为 5%),而正常细胞表面的核素蛋白很少。单分子力谱法研究了胰腺癌细胞表面三种类型的适配体与核素的相互作用。核素-(9FU-AS1411-NH2)的解结合力大于核素-(AS1411-NH2)。核素-(9FU-AS1411-NH2)的解离活化能高于核素-(AS1411-NH2),这表明前者比后者更稳定,更难解离。核素与 CRONH2 之间没有解结合力。所有这些都表明,核素蛋白在单分子水平上定量定位在胰腺癌细胞和正常细胞上,并在皮牛顿水平上研究了核素蛋白与适配体之间的相互作用(解结合力和动力学)。这项工作的方法和结果将为核素和适配体的研究铺平新的道路,也将有助于对其他蛋白质及其相应适配体的研究。
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引用次数: 0
Fourier transform-based post-processing drift compensation and calibration method for scanning probe microscopy 基于傅立叶变换的扫描探针显微镜后处理漂移补偿和校准方法
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-05-09 DOI: 10.1016/j.ultramic.2024.113984
M. Le Ster, S. Pawłowski, I. Lutsyk, P.J. Kowalczyk

Scanning probe microscopy (SPM) is ubiquitous in nanoscale science allowing the observation of features in real space down to the angstrom resolution. The scanning nature of SPM, wherein a sharp tip rasters the surface during which a physical setpoint is maintained via a control feedback loop, often implies that the image is subject to drift effects, leading to distortion of the resulting image. While there are in-operando methods to compensate for the drift, correcting the residual linear drift in obtained images is often neglected. In this paper, we present a reciprocal space-based technique to compensate the linear drift in atomically-resolved scanning probe microscopy images without distinction of the fast and slow scanning directions; furthermore this method does not require the set of SPM images obtained for the different scanning directions. Instead, the compensation is made possible by the a priori knowledge of the lattice parameters. The method can also be used to characterize and calibrate the SPM instrument.

扫描探针显微镜(SPM)在纳米科学中无处不在,它可以观察真实空间中的特征,分辨率可达埃级。扫描探针显微镜的扫描性质是用一个尖锐的探针在表面上进行光栅扫描,其间通过控制反馈回路保持一个物理设定点,这通常意味着图像会受到漂移效应的影响,导致生成的图像失真。虽然有操作中补偿漂移的方法,但校正所获图像中的残余线性漂移往往被忽视。在本文中,我们提出了一种基于倒易空间的技术,用于补偿原子分辨扫描探针显微镜图像中的线性漂移,而无需区分快速和慢速扫描方向;此外,这种方法不需要针对不同扫描方向获得的一组 SPM 图像。相反,晶格参数的先验知识使补偿成为可能。该方法还可用于鉴定和校准 SPM 仪器。
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引用次数: 0
A novel STM for quality atomic resolution with piezoelectric motor of high compactness and simplicity 采用压电电机的新型原子分辨质量 STM 结构紧凑、操作简单。
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-05-08 DOI: 10.1016/j.ultramic.2024.113983
Muhammad Touqeer , Behnam Esmaeilzadeh , Wenjie Meng , Jihao Wang , Syed Asad Maqbool , Shaofeng Zheng , Liu Junwei , Yubin Hou , Qingyou Lu

Scanning tunneling microscope (STM) is a renowned scientific tool for obtaining high-resolution atomic images of materials. Herein, we present an innovative design of the scanning unit with a compact yet powerful inertial piezoelectric motor inspired by the Spider Drive motor principle. The scanning unit mainly consists of a small 9 mm long piezoelectric tube scanner (PTS), one end of which is coaxially connected to the main sapphire body of the STM. Of particular emphasis in this design is the piezoelectric shaft (PS), constructed from piezoelectric material instead of conventional metallic or zirconium materials. The PS is a rectangular piezoelectric stack composed of two piezoelectric plates, which are elastically clamped on the inner wall of the PTS via a spring strip. The PTS and PS expand and contract independently with each other to improve the inertial force and reduce the threshold voltage. To ensure the stability of the PS and balance the stepping performance of the inertial motor, a counterweight, and a matching conical spring are fixed at the tail of the PS. This innovative design allows for the assessment of scanning unit performance by applying a driving signal, threshold voltage is 50 V at room temperature. Step sizes vary from 0.1 to 1 µm by changing the driving signal at room temperature. Furthermore, we successfully obtained atomic-resolution images of a highly oriented pyrolytic graphite (HOPG) sample and low drift rates of 23.4 pm/min and 34.6 pm/min in X-Y plane and Z direction, respectively, under ambient conditions. This small, compact STM unit has the potential for the development of a rotatable STM for use in cryogen-free magnets, and superconducting magnets.

扫描隧道显微镜(STM)是获取材料高分辨率原子图像的著名科学工具。在此,我们受蜘蛛驱动电机原理的启发,提出了一种扫描装置的创新设计,该装置配备了一个小巧但功能强大的惯性压电电机。扫描单元主要由一个 9 毫米长的小型压电管扫描器(PTS)组成,其一端与 STM 的蓝宝石主体同轴连接。该设计的重点是压电轴(PS),它由压电材料而非传统的金属或锆材料制成。压电轴是由两块压电板组成的矩形压电叠层,两块压电板通过弹簧条弹性地夹在 PTS 的内壁上。PTS 和 PS 相互独立地膨胀和收缩,以提高惯性力并降低阈值电压。为确保 PS 的稳定性并平衡惯性电机的步进性能,在 PS 尾部固定了一个配重和一个匹配的锥形弹簧。这种创新设计允许通过施加驱动信号(室温下阈值电压为 50 V)来评估扫描单元的性能。通过在室温下改变驱动信号,步长从 0.1 微米到 1 微米不等。此外,我们还成功获得了高取向热解石墨(HOPG)样品的原子分辨率图像,并在环境条件下实现了 X-Y 平面和 Z 方向分别为 23.4 pm/min 和 34.6 pm/min 的低漂移率。这种体积小、结构紧凑的 STM 装置具有开发用于无低温磁体和超导磁体的可旋转 STM 的潜力。
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引用次数: 0
Atomic force microscopy in mechanical measurements of single nanowires 原子力显微镜在单根纳米线机械测量中的应用
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-05-07 DOI: 10.1016/j.ultramic.2024.113985
Bartosz C. Pruchnik , Janusz D. Fidelus , Ewelina Gacka , Krystyna Mika , Leszek Zaraska , Grzegorz D. Sulka , Teodor P. Gotszalk

In this paper, we present the results of mechanical measurement of single nanowires (NWs) in a repeatable manner. Substrates with specifically designed mechanical features were used for NW placement and localization for measurements of properties such as Young's modulus or tensile strength of NW with an atomic force microscopy (AFM) system. Dense arrays of zinc oxide (ZnO) nanowires were obtained by one-step anodic oxidation of metallic Zn foil in a sodium bicarbonate electrolyte and thermal post-treatment. ZnO NWs with a hexagonal wurtzite structure were fixed to the substrates using focused electron beam-induced deposition (FEBID) and were annealed at different temperatures in situ. We show a 10-fold change in the properties of annealed materials as well as a difference in the properties of the NW materials from their bulk values with pre-annealed Young modulus at the level of 20 GPa and annealed reaching 200 GPa. We found the newly developed method to be much more versatile, allowing for in situ operations of NWs, including measurements with different methods of scanning probe microscopy.

本文介绍了以可重复方式对单纳米线(NWs)进行机械测量的结果。具有专门设计的机械特征的基底用于放置和定位纳米线,以便用原子力显微镜(AFM)系统测量纳米线的杨氏模量或拉伸强度等特性。氧化锌(ZnO)纳米线的密集阵列是通过金属锌箔在碳酸氢钠电解液中的一步阳极氧化和热后处理获得的。通过聚焦电子束诱导沉积(FEBID)将具有六方菱形结构的氧化锌纳米线固定在基底上,并在不同温度下进行原位退火。我们发现,退火后材料的特性变化了 10 倍,而且 NW 材料的特性与其块体值相比也有所不同,退火前的杨氏模量为 20 GPa,而退火后则达到 200 GPa。我们发现新开发的方法用途更广,可以对 NW 进行原位操作,包括使用不同的扫描探针显微镜方法进行测量。
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引用次数: 0
Systematic study of FIB-induced damage for the high-quality TEM sample preparation 系统研究用于制备高质量 TEM 样品的 FIB 引起的损伤
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-26 DOI: 10.1016/j.ultramic.2024.113980
Jun Uzuhashi, Tadakatsu Ohkubo

Nowadays, a focused Ga ion beam (FIB) with a scanning electron microscopy (SEM) system has been widely used to prepare the thin-foil sample for transmission electron microscopy (TEM) or scanning TEM (STEM) observation. An establishment of a solid strategy for a reproducible high-quality sample preparation process is essential to carry out high-quality (S)TEM analysis. In this work, the FIB damages introduced by Ga+ beam were investigated both experimentally and stopping and range of ions in matter (SRIM) simulation for silicon (Si), gallium nitride (GaN), indium phosphide (InP), and gallium arsenide (GaAs) semiconductors. It has been revealed that experimental investigations of the FIB-induced damage are in good agreement with SRIM simulation by defining the damage as not only “amorphization” but also “crystal distortion”. The systematic evaluation of FIB damages shown in this paper should be indispensable guidance for reliable (S)TEM sample preparation.

如今,带有扫描电子显微镜(SEM)系统的聚焦镓离子束(FIB)已被广泛用于制备薄片样品,以便进行透射电子显微镜(TEM)或扫描电子显微镜(STEM)观察。要进行高质量的 (S)TEM 分析,就必须为可重现的高质量样品制备过程制定可靠的策略。在这项工作中,对硅 (Si)、氮化镓 (GaN)、磷化铟 (InP) 和砷化镓 (GaAs) 半导体进行了实验和停止以及物质中离子范围 (SRIM) 模拟,研究了 Ga+ 射束引入的 FIB 损伤。研究发现,通过将损伤定义为 "非晶化 "和 "晶体变形",对 FIB 引起的损伤进行的实验研究与 SRIM 模拟结果非常吻合。本文所展示的对 FIB 损伤的系统性评估,对可靠的 (S)TEM 样品制备具有不可或缺的指导意义。
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引用次数: 0
Non-negative matrix factorization-aided phase unmixing and trace element quantification of STEM-EDXS data 非负矩阵因式分解辅助相位非混合和 STEM-EDXS 数据的痕量元素定量。
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-26 DOI: 10.1016/j.ultramic.2024.113981
Hui Chen , Farhang Nabiei , James Badro , Duncan T.L. Alexander , Cécile Hébert

Energy-dispersive X-ray spectroscopy (EDXS) mapping with a scanning transmission electron microscope (STEM) is commonly used for chemical characterization of materials. However, STEM-EDXS quantification becomes challenging when the phases constituting the sample under investigation share common elements and overlap spatially. In this paper, we present a methodology to identify, segment, and unmix phases with a substantial spectral and spatial overlap in a semi-automated fashion through combining non-negative matrix factorization with a priori knowledge of the sample. We illustrate the methodology using a sample taken from an electron beam-sensitive mineral assemblage representing Earth's deep mantle. With it, we retrieve the true EDX spectra of the constituent phases and their corresponding phase abundance maps. It further enables us to achieve a reliable quantification for trace elements having concentration levels of ∼100 ppm. Our approach can be adapted to aid the analysis of many materials systems that produce STEM-EDXS datasets having phase overlap and/or limited signal-to-noise ratio (SNR) in spatially-integrated spectra.

利用扫描透射电子显微镜(STEM)绘制能量色散 X 射线光谱(EDXS)图通常用于材料的化学表征。然而,当构成被研究样品的各相具有共同元素并在空间上重叠时,STEM-EDXS 定量就变得具有挑战性。在本文中,我们提出了一种方法,通过将非负矩阵因式分解与样品的先验知识相结合,以半自动的方式识别、分割和去除具有大量光谱和空间重叠的相。我们使用从代表地球深部地幔的电子束敏感矿物集合体中提取的样本来说明该方法。有了它,我们就能检索到组成物相的真实 EDX 光谱及其相应的物相丰度图。它还使我们能够对浓度水平在 ∼100 ppm 的微量元素进行可靠的量化。我们的方法可用于辅助许多材料系统的分析,这些系统产生的 STEM-EDXS 数据集具有相位重叠和/或空间整合光谱的信噪比(SNR)有限。
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引用次数: 0
Standardization and quantification of backscattered electron imaging in scanning electron microscopy 扫描电子显微镜中背散射电子成像的标准化和量化
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-26 DOI: 10.1016/j.ultramic.2024.113982
Shih-Ming Wang , Yu-Cheng Chiu , Yu-Hsin Wu , Bo-Yi Chen , I-Ling Chang , Chih-Wei Chang

Backscattered electron (BSE) imaging based on scanning electron microscopy (SEM) has been widely used in scientific and industrial disciplines. However, achieving consistent standards and precise quantification in BSE images has proven to be a long-standing challenge. Previous methods incorporating dedicated calibration processes and Monte Carlo simulations have still posed practical limitations for widespread adoption. Here we introduce a bolometer platform that directly measures the absorbed thermal energy of the sample and demonstrates that it can help to analyze the atomic number (Z) of the investigated samples. The technique, named Atomic Number Electron Microscopy (ZEM), employs the conservation of energy as the foundation of standardization and can serve as a nearly ideal BSE detector. Our approach combines the strengths of both BSE and ZEM detectors, simplifying quantitative analysis for samples of various shapes and sizes. The complementary relation between the ZEM and BSE signals also makes the detection of light elements or compounds more accessible than existing microanalysis techniques.

基于扫描电子显微镜(SEM)的背散射电子(BSE)成像技术已广泛应用于科学和工业领域。然而,事实证明,在 BSE 图像中实现一致的标准和精确的量化是一项长期的挑战。以前采用的方法包括专门的校准过程和蒙特卡罗模拟,但这些方法在实际应用中仍然受到限制。在这里,我们介绍了一种直接测量样品吸收热能的原子辐射计平台,并证明它有助于分析所研究样品的原子序数(Z)。这项技术被命名为原子序数电子显微镜(ZEM),采用能量守恒作为标准化的基础,可作为近乎理想的 BSE 探测器。我们的方法结合了 BSE 和 ZEM 探测器的优势,简化了对各种形状和大小样品的定量分析。ZEM 和 BSE 信号之间的互补关系也使得轻元素或化合物的检测比现有的微分析技术更容易实现。
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引用次数: 0
Magnetic domain wall dynamics studied by in-situ lorentz microscopy with aid of custom-made Hall-effect sensor holder 借助定制霍尔效应传感器支架,通过原位洛伦兹显微镜研究磁畴壁动力学
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-26 DOI: 10.1016/j.ultramic.2024.113979
Mari Honkanen , Henri Lukinmaa , Sami Kaappa , Suvi Santa-aho , Jaakko Kajan , Samuli Savolainen , Lucio Azzari , Lasse Laurson , Mikko Palosaari , Minnamari Vippola

We built a custom-made holder with a Hall-effect sensor to measure the single point magnetic flux density inside a transmission electron microscope (TEM, JEM-F200, JEOL). The measurement point is at the same place as the sample inside the TEM. We utilized information collected with the Hall-effect sensor holder to study magnetic domain wall (DW) dynamics by in-situ Lorentz microscopy. We generated an external magnetic field to the sample using the objective lens (OL) of the TEM. Based on our measurements with the Hall-effect sensor holder, the OL has nearly linear response, and when it is switched off, the strength of the magnetic field in the sample region is very close to 0 mT.

A ferritic-pearlitic sample studied has globular and lamellar cementite (Fe3C) carbides in the ferrite matrix. Based on the in-situ Lorentz microscopy experiments, DWs in the ferritic matrix perpendicular to the lamellar carbides start to move first at ∼10 mT. At 160 mT, DWs inside the globular carbide start to disappear, and the saturation occurs at ∼210 mT. At 288 mT, the DWs parallel to the lamellar carbides still exist. Thus, these lamellar carbides are very strong pinning sites for DWs. We also run dynamical micromagnetic simulations to reproduce the DW disappearance in the globular carbide. As in the in-situ experiments, the DWs stay stable until the external field reaches the magnitude of 160 mT, and the DWs disappear before the field is 214 mT. In general, the micromagnetic simulations supported very well the interpretation of the experimental findings.

我们定制了一个带有霍尔效应传感器的支架,用于测量透射电子显微镜(TEM,JEM-F200,JEOL)内的单点磁通密度。测量点与 TEM 内的样品位于同一位置。我们利用霍尔效应传感器支架收集的信息,通过原位洛伦兹显微镜研究磁畴壁(DW)动力学。我们利用 TEM 的物镜 (OL) 对样品产生外部磁场。根据我们使用霍尔效应传感器支架进行的测量,OL 具有近乎线性的响应,当其关闭时,样品区域的磁场强度非常接近 0 mT。根据原位洛伦兹显微镜实验,铁素体基体中垂直于片状碳化物的 DW 在 ∼10 mT 时首先开始移动。160 mT 时,球状碳化物内部的 DW 开始消失,210 mT 时达到饱和。在 288 mT 时,与片状碳化物平行的 DW 仍然存在。因此,这些片状碳化物是 DWs 非常强的钉扎点。我们还进行了动态微磁模拟,以再现球状碳化物中 DW 的消失。与原位实验一样,DWs 在外部磁场强度达到 160 mT 之前保持稳定,而在磁场强度达到 214 mT 之前就会消失。总的来说,微磁模拟很好地支持了对实验结果的解释。
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引用次数: 0
Elemental quantification using electron energy-loss spectroscopy with a low voltage scanning transmission electron microscope (STEM-EELS) 利用低电压扫描透射电子显微镜(STEM-EELS)进行电子能量损失光谱元素定量分析
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-23 DOI: 10.1016/j.ultramic.2024.113977
Nicolas Dumaresq, Nicolas Brodusch, Stéphanie Bessette, Raynald Gauvin

Electron beam damage in electron microscopes is becoming more and more problematic in material research with the increasing demand of characterization of new beam sensitive material such as Li based compounds used in lithium-ion batteries. To avoid radiolysis damage, it has become common practice to use Cryo-EM, however, knock-on damage can still occur in conventional TEM/STEM with a high-accelerating voltage (200–300 keV). In this work, electron energy loss spectroscopy with an accelerating voltage of 30,20 and 10 keV was explored with h-BN, TiB2 and TiN compounds. All Ti L2,3, N K and B K edges were successfully observed with an accelerating voltage as low as 10 keV. An accurate elemental quantification for all three samples was obtained using a multi-linear least square (MLLS) procedure which gives at most a 5 % of standard deviation which is well within the error of the computation of the inelastic partial-cross section used for the quantification. These results show the great potential of using low-voltage EELS which is another step towards a knock-on damage free analysis.

随着对新型光束敏感材料(如锂离子电池中使用的锂基化合物)表征需求的不断增加,电子显微镜中的电子束损伤问题在材料研究中变得越来越严重。为了避免辐射损伤,使用低温电子显微镜(Cryo-EM)已成为一种常见的做法,但在传统的 TEM/STEM 中,高加速电压(200-300 keV)仍可能会产生连锁损伤。在这项工作中,对 h-BN、TiB2 和 TiN 化合物在 30、20 和 10 keV 加速电压下的电子能量损失光谱进行了探索。在低至 10 keV 的加速电压下,成功观测到了所有 Ti L2、3、N K 和 B K 边缘。使用多线性最小平方(MLLS)程序对所有三种样品进行了精确的元素定量,其标准偏差最多为 5%,完全在用于定量的非弹性部分截面计算误差范围之内。这些结果表明了使用低电压 EELS 的巨大潜力,这是向无损分析迈出的又一步。
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