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Atomic force microscopy in mechanical measurements of single nanowires 原子力显微镜在单根纳米线机械测量中的应用
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-05-07 DOI: 10.1016/j.ultramic.2024.113985
Bartosz C. Pruchnik , Janusz D. Fidelus , Ewelina Gacka , Krystyna Mika , Leszek Zaraska , Grzegorz D. Sulka , Teodor P. Gotszalk

In this paper, we present the results of mechanical measurement of single nanowires (NWs) in a repeatable manner. Substrates with specifically designed mechanical features were used for NW placement and localization for measurements of properties such as Young's modulus or tensile strength of NW with an atomic force microscopy (AFM) system. Dense arrays of zinc oxide (ZnO) nanowires were obtained by one-step anodic oxidation of metallic Zn foil in a sodium bicarbonate electrolyte and thermal post-treatment. ZnO NWs with a hexagonal wurtzite structure were fixed to the substrates using focused electron beam-induced deposition (FEBID) and were annealed at different temperatures in situ. We show a 10-fold change in the properties of annealed materials as well as a difference in the properties of the NW materials from their bulk values with pre-annealed Young modulus at the level of 20 GPa and annealed reaching 200 GPa. We found the newly developed method to be much more versatile, allowing for in situ operations of NWs, including measurements with different methods of scanning probe microscopy.

本文介绍了以可重复方式对单纳米线(NWs)进行机械测量的结果。具有专门设计的机械特征的基底用于放置和定位纳米线,以便用原子力显微镜(AFM)系统测量纳米线的杨氏模量或拉伸强度等特性。氧化锌(ZnO)纳米线的密集阵列是通过金属锌箔在碳酸氢钠电解液中的一步阳极氧化和热后处理获得的。通过聚焦电子束诱导沉积(FEBID)将具有六方菱形结构的氧化锌纳米线固定在基底上,并在不同温度下进行原位退火。我们发现,退火后材料的特性变化了 10 倍,而且 NW 材料的特性与其块体值相比也有所不同,退火前的杨氏模量为 20 GPa,而退火后则达到 200 GPa。我们发现新开发的方法用途更广,可以对 NW 进行原位操作,包括使用不同的扫描探针显微镜方法进行测量。
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引用次数: 0
Systematic study of FIB-induced damage for the high-quality TEM sample preparation 系统研究用于制备高质量 TEM 样品的 FIB 引起的损伤
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-26 DOI: 10.1016/j.ultramic.2024.113980
Jun Uzuhashi, Tadakatsu Ohkubo

Nowadays, a focused Ga ion beam (FIB) with a scanning electron microscopy (SEM) system has been widely used to prepare the thin-foil sample for transmission electron microscopy (TEM) or scanning TEM (STEM) observation. An establishment of a solid strategy for a reproducible high-quality sample preparation process is essential to carry out high-quality (S)TEM analysis. In this work, the FIB damages introduced by Ga+ beam were investigated both experimentally and stopping and range of ions in matter (SRIM) simulation for silicon (Si), gallium nitride (GaN), indium phosphide (InP), and gallium arsenide (GaAs) semiconductors. It has been revealed that experimental investigations of the FIB-induced damage are in good agreement with SRIM simulation by defining the damage as not only “amorphization” but also “crystal distortion”. The systematic evaluation of FIB damages shown in this paper should be indispensable guidance for reliable (S)TEM sample preparation.

如今,带有扫描电子显微镜(SEM)系统的聚焦镓离子束(FIB)已被广泛用于制备薄片样品,以便进行透射电子显微镜(TEM)或扫描电子显微镜(STEM)观察。要进行高质量的 (S)TEM 分析,就必须为可重现的高质量样品制备过程制定可靠的策略。在这项工作中,对硅 (Si)、氮化镓 (GaN)、磷化铟 (InP) 和砷化镓 (GaAs) 半导体进行了实验和停止以及物质中离子范围 (SRIM) 模拟,研究了 Ga+ 射束引入的 FIB 损伤。研究发现,通过将损伤定义为 "非晶化 "和 "晶体变形",对 FIB 引起的损伤进行的实验研究与 SRIM 模拟结果非常吻合。本文所展示的对 FIB 损伤的系统性评估,对可靠的 (S)TEM 样品制备具有不可或缺的指导意义。
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引用次数: 0
Non-negative matrix factorization-aided phase unmixing and trace element quantification of STEM-EDXS data 非负矩阵因式分解辅助相位非混合和 STEM-EDXS 数据的痕量元素定量。
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-26 DOI: 10.1016/j.ultramic.2024.113981
Hui Chen , Farhang Nabiei , James Badro , Duncan T.L. Alexander , Cécile Hébert

Energy-dispersive X-ray spectroscopy (EDXS) mapping with a scanning transmission electron microscope (STEM) is commonly used for chemical characterization of materials. However, STEM-EDXS quantification becomes challenging when the phases constituting the sample under investigation share common elements and overlap spatially. In this paper, we present a methodology to identify, segment, and unmix phases with a substantial spectral and spatial overlap in a semi-automated fashion through combining non-negative matrix factorization with a priori knowledge of the sample. We illustrate the methodology using a sample taken from an electron beam-sensitive mineral assemblage representing Earth's deep mantle. With it, we retrieve the true EDX spectra of the constituent phases and their corresponding phase abundance maps. It further enables us to achieve a reliable quantification for trace elements having concentration levels of ∼100 ppm. Our approach can be adapted to aid the analysis of many materials systems that produce STEM-EDXS datasets having phase overlap and/or limited signal-to-noise ratio (SNR) in spatially-integrated spectra.

利用扫描透射电子显微镜(STEM)绘制能量色散 X 射线光谱(EDXS)图通常用于材料的化学表征。然而,当构成被研究样品的各相具有共同元素并在空间上重叠时,STEM-EDXS 定量就变得具有挑战性。在本文中,我们提出了一种方法,通过将非负矩阵因式分解与样品的先验知识相结合,以半自动的方式识别、分割和去除具有大量光谱和空间重叠的相。我们使用从代表地球深部地幔的电子束敏感矿物集合体中提取的样本来说明该方法。有了它,我们就能检索到组成物相的真实 EDX 光谱及其相应的物相丰度图。它还使我们能够对浓度水平在 ∼100 ppm 的微量元素进行可靠的量化。我们的方法可用于辅助许多材料系统的分析,这些系统产生的 STEM-EDXS 数据集具有相位重叠和/或空间整合光谱的信噪比(SNR)有限。
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引用次数: 0
Standardization and quantification of backscattered electron imaging in scanning electron microscopy 扫描电子显微镜中背散射电子成像的标准化和量化
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-26 DOI: 10.1016/j.ultramic.2024.113982
Shih-Ming Wang , Yu-Cheng Chiu , Yu-Hsin Wu , Bo-Yi Chen , I-Ling Chang , Chih-Wei Chang

Backscattered electron (BSE) imaging based on scanning electron microscopy (SEM) has been widely used in scientific and industrial disciplines. However, achieving consistent standards and precise quantification in BSE images has proven to be a long-standing challenge. Previous methods incorporating dedicated calibration processes and Monte Carlo simulations have still posed practical limitations for widespread adoption. Here we introduce a bolometer platform that directly measures the absorbed thermal energy of the sample and demonstrates that it can help to analyze the atomic number (Z) of the investigated samples. The technique, named Atomic Number Electron Microscopy (ZEM), employs the conservation of energy as the foundation of standardization and can serve as a nearly ideal BSE detector. Our approach combines the strengths of both BSE and ZEM detectors, simplifying quantitative analysis for samples of various shapes and sizes. The complementary relation between the ZEM and BSE signals also makes the detection of light elements or compounds more accessible than existing microanalysis techniques.

基于扫描电子显微镜(SEM)的背散射电子(BSE)成像技术已广泛应用于科学和工业领域。然而,事实证明,在 BSE 图像中实现一致的标准和精确的量化是一项长期的挑战。以前采用的方法包括专门的校准过程和蒙特卡罗模拟,但这些方法在实际应用中仍然受到限制。在这里,我们介绍了一种直接测量样品吸收热能的原子辐射计平台,并证明它有助于分析所研究样品的原子序数(Z)。这项技术被命名为原子序数电子显微镜(ZEM),采用能量守恒作为标准化的基础,可作为近乎理想的 BSE 探测器。我们的方法结合了 BSE 和 ZEM 探测器的优势,简化了对各种形状和大小样品的定量分析。ZEM 和 BSE 信号之间的互补关系也使得轻元素或化合物的检测比现有的微分析技术更容易实现。
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引用次数: 0
Magnetic domain wall dynamics studied by in-situ lorentz microscopy with aid of custom-made Hall-effect sensor holder 借助定制霍尔效应传感器支架,通过原位洛伦兹显微镜研究磁畴壁动力学
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-26 DOI: 10.1016/j.ultramic.2024.113979
Mari Honkanen , Henri Lukinmaa , Sami Kaappa , Suvi Santa-aho , Jaakko Kajan , Samuli Savolainen , Lucio Azzari , Lasse Laurson , Mikko Palosaari , Minnamari Vippola

We built a custom-made holder with a Hall-effect sensor to measure the single point magnetic flux density inside a transmission electron microscope (TEM, JEM-F200, JEOL). The measurement point is at the same place as the sample inside the TEM. We utilized information collected with the Hall-effect sensor holder to study magnetic domain wall (DW) dynamics by in-situ Lorentz microscopy. We generated an external magnetic field to the sample using the objective lens (OL) of the TEM. Based on our measurements with the Hall-effect sensor holder, the OL has nearly linear response, and when it is switched off, the strength of the magnetic field in the sample region is very close to 0 mT.

A ferritic-pearlitic sample studied has globular and lamellar cementite (Fe3C) carbides in the ferrite matrix. Based on the in-situ Lorentz microscopy experiments, DWs in the ferritic matrix perpendicular to the lamellar carbides start to move first at ∼10 mT. At 160 mT, DWs inside the globular carbide start to disappear, and the saturation occurs at ∼210 mT. At 288 mT, the DWs parallel to the lamellar carbides still exist. Thus, these lamellar carbides are very strong pinning sites for DWs. We also run dynamical micromagnetic simulations to reproduce the DW disappearance in the globular carbide. As in the in-situ experiments, the DWs stay stable until the external field reaches the magnitude of 160 mT, and the DWs disappear before the field is 214 mT. In general, the micromagnetic simulations supported very well the interpretation of the experimental findings.

我们定制了一个带有霍尔效应传感器的支架,用于测量透射电子显微镜(TEM,JEM-F200,JEOL)内的单点磁通密度。测量点与 TEM 内的样品位于同一位置。我们利用霍尔效应传感器支架收集的信息,通过原位洛伦兹显微镜研究磁畴壁(DW)动力学。我们利用 TEM 的物镜 (OL) 对样品产生外部磁场。根据我们使用霍尔效应传感器支架进行的测量,OL 具有近乎线性的响应,当其关闭时,样品区域的磁场强度非常接近 0 mT。根据原位洛伦兹显微镜实验,铁素体基体中垂直于片状碳化物的 DW 在 ∼10 mT 时首先开始移动。160 mT 时,球状碳化物内部的 DW 开始消失,210 mT 时达到饱和。在 288 mT 时,与片状碳化物平行的 DW 仍然存在。因此,这些片状碳化物是 DWs 非常强的钉扎点。我们还进行了动态微磁模拟,以再现球状碳化物中 DW 的消失。与原位实验一样,DWs 在外部磁场强度达到 160 mT 之前保持稳定,而在磁场强度达到 214 mT 之前就会消失。总的来说,微磁模拟很好地支持了对实验结果的解释。
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引用次数: 0
Elemental quantification using electron energy-loss spectroscopy with a low voltage scanning transmission electron microscope (STEM-EELS) 利用低电压扫描透射电子显微镜(STEM-EELS)进行电子能量损失光谱元素定量分析
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-23 DOI: 10.1016/j.ultramic.2024.113977
Nicolas Dumaresq, Nicolas Brodusch, Stéphanie Bessette, Raynald Gauvin

Electron beam damage in electron microscopes is becoming more and more problematic in material research with the increasing demand of characterization of new beam sensitive material such as Li based compounds used in lithium-ion batteries. To avoid radiolysis damage, it has become common practice to use Cryo-EM, however, knock-on damage can still occur in conventional TEM/STEM with a high-accelerating voltage (200–300 keV). In this work, electron energy loss spectroscopy with an accelerating voltage of 30,20 and 10 keV was explored with h-BN, TiB2 and TiN compounds. All Ti L2,3, N K and B K edges were successfully observed with an accelerating voltage as low as 10 keV. An accurate elemental quantification for all three samples was obtained using a multi-linear least square (MLLS) procedure which gives at most a 5 % of standard deviation which is well within the error of the computation of the inelastic partial-cross section used for the quantification. These results show the great potential of using low-voltage EELS which is another step towards a knock-on damage free analysis.

随着对新型光束敏感材料(如锂离子电池中使用的锂基化合物)表征需求的不断增加,电子显微镜中的电子束损伤问题在材料研究中变得越来越严重。为了避免辐射损伤,使用低温电子显微镜(Cryo-EM)已成为一种常见的做法,但在传统的 TEM/STEM 中,高加速电压(200-300 keV)仍可能会产生连锁损伤。在这项工作中,对 h-BN、TiB2 和 TiN 化合物在 30、20 和 10 keV 加速电压下的电子能量损失光谱进行了探索。在低至 10 keV 的加速电压下,成功观测到了所有 Ti L2、3、N K 和 B K 边缘。使用多线性最小平方(MLLS)程序对所有三种样品进行了精确的元素定量,其标准偏差最多为 5%,完全在用于定量的非弹性部分截面计算误差范围之内。这些结果表明了使用低电压 EELS 的巨大潜力,这是向无损分析迈出的又一步。
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引用次数: 0
Influence of magnetic field on electron beam-induced Coulomb explosion of gold microparticles in transmission electron microscopy 磁场对透射电子显微镜下电子束诱导的金微粒库仑爆炸的影响
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-22 DOI: 10.1016/j.ultramic.2024.113978
Wen Feng , Thomas Gemming , Lars Giebeler , Jiang Qu , Kristina Weinel , Leonardo Agudo Jácome , Bernd Büchner , Ignacio Gonzalez-Martinez

In this work we instigated the fragmentation of Au microparticles supported on a thin amorphous carbon film by irradiating them with a gradually convergent electron beam inside the Transmission Electron Microscope. This phenomenon has been generically labeled as “electron beam-induced fragmentation” or EBIF and its physical origin remains contested. On the one hand, EBIF has been primarily characterized as a consequence of beam-induced heating. On the other, EBIF has been attributed to beam-induced charging eventually leading to Coulomb explosion. To test the feasibility of the charging framework for EBIF, we instigated the fragmentation of Au particles under two different experimental conditions. First, with the magnetic objective lens of the microscope operating at full capacity, i.e. background magnetic field B=2 T, and with the magnetic objective lens switched off (Lorenz mode), i.e. B=0 T. We observe that the presence or absence of the magnetic field noticeably affects the critical current density at which EBIF occurs. This strongly suggests that magnetic field effects play a crucial role in instigating EBIF on the microparticles. The dependence of the value of the critical current density on the absence or presence of an ambient magnetic field cannot be accounted for by the beam-induced heating model. Consequently, this work presents robust experimental evidence suggesting that Coulomb explosion driven by electrostatic charging is the root cause of EBIF.

在这项工作中,我们在透射电子显微镜内用逐渐会聚的电子束照射支撑在无定形碳薄膜上的金微粒,使其碎裂。这种现象被通称为 "电子束诱导碎裂 "或 EBIF,其物理起源仍存在争议。一方面,EBIF 主要被描述为电子束诱导加热的结果。另一方面,EBIF 被认为是束流诱导充电最终导致库仑爆炸的结果。为了测试 EBIF 充电框架的可行性,我们在两种不同的实验条件下对金粒子进行了碎裂试验。首先,显微镜的磁性物镜满负荷工作,即背景磁场 B=2 T,然后关闭磁性物镜(洛伦兹模式),即 B=0T。这有力地表明,磁场效应在诱发微颗粒上的 EBIF 方面起着至关重要的作用。临界电流密度值与环境磁场存在与否的关系无法用光束诱导加热模型来解释。因此,这项研究提出了强有力的实验证据,表明静电荷驱动的库仑爆炸是 EBIF 的根本原因。
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引用次数: 0
Ghostbuster: A phase retrieval diffraction tomography algorithm for cryo-EM 幽灵克星用于低温电子显微镜的相位检索衍射层析成像算法
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-12 DOI: 10.1016/j.ultramic.2024.113962
Joel Yeo , Benedikt J. Daurer , Dari Kimanius , Deepan Balakrishnan , Tristan Bepler , Yong Zi Tan , N. Duane Loh

Ewald sphere curvature correction, which extends beyond the projection approximation, stretches the shallow depth of field in cryo-EM reconstructions of thick particles. Here we show that even for previously assumed thin particles, reconstruction artifacts which we refer to as ghosts can appear. By retrieving the lost phases of the electron exitwaves and accounting for the first Born approximation scattering within the particle, we show that these ghosts can be effectively eliminated. Our simulations demonstrate how such ghostbusting can improve reconstructions as compared to existing state-of-the-art software. Like ptychographic cryo-EM, our Ghostbuster algorithm uses phase retrieval to improve reconstructions, but unlike the former, we do not need to modify the existing data acquisition pipelines.

埃瓦尔德球曲率校正超越了投影近似,它拉伸了厚颗粒低温电子显微镜重建的浅景深。在这里,我们展示了即使是先前假定的薄粒子,也会出现我们称之为鬼影的重建伪影。通过找回电子出口波的丢失相位并考虑粒子内部的第一玻恩近似散射,我们证明可以有效消除这些鬼影。我们的模拟结果表明,与现有的最先进软件相比,这种消除幽灵的方法可以改善重建效果。与层析低温电子显微镜一样,我们的 "鬼影克星 "算法也使用相位检索来改进重构,但与前者不同的是,我们不需要修改现有的数据采集管道。
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引用次数: 0
A soft touch with electron beams: Digging out structural information of nanomaterials with advanced scanning low energy electron microscopy coupled with deep learning 电子束的柔软触感:利用先进的扫描低能电子显微镜和深度学习挖掘纳米材料的结构信息
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-10 DOI: 10.1016/j.ultramic.2024.113965
Eliška Materna Mikmeková , Jiří Materna , Ivo Konvalina , Šárka Mikmeková , Ilona Müllerová , Tewodros Asefa

Nanostructured materials continue to find applications in various electronic and sensing devices, chromatography, separations, drug delivery, renewable energy, and catalysis. While major advancements on the synthesis and characterization of these materials have already been made, getting information about their structures at sub-nanometer resolution remains challenging. It is also unfortunate to find that many emerging or already available powerful analytical methods take time to be fully adopted for characterization of various nanomaterials. The scanning low energy electron microscopy (SLEEM) is a good example to this. In this report, we show how clearer structural and surface information at nanoscale can be obtained by SLEEM, coupled with deep learning. The method is demonstrated using Au nanoparticles-loaded mesoporous silica as a model system. Moreover, unlike conventional scanning electron microscopy (SEM), SLEEM does not require the samples to be coated with conductive films for analysis; thus, not only it is convenient to use but it also does not give artifacts. The results further reveal that SLEEM and deep learning can serve as great tools to analyze materials at nanoscale well. The biggest advantage of the presented method is its availability, as most modern SEMs are able to operate at low energies and deep learning methods are already being widely used in many fields.

纳米结构材料在各种电子和传感设备、色谱、分离、药物输送、可再生能源和催化等领域不断得到应用。虽然在这些材料的合成和表征方面已经取得了重大进展,但以亚纳米分辨率获取有关其结构的信息仍然具有挑战性。同样令人遗憾的是,许多新兴的或已有的强大分析方法需要一段时间才能完全用于表征各种纳米材料。扫描低能电子显微镜(SLEEM)就是一个很好的例子。在本报告中,我们展示了如何通过 SLEEM 并结合深度学习获得更清晰的纳米级结构和表面信息。该方法以金纳米颗粒负载的介孔二氧化硅为模型系统进行了演示。此外,与传统的扫描电子显微镜(SEM)不同,SLEEM 无需在样品上涂覆导电膜即可进行分析,因此不仅使用方便,而且不会产生伪影。研究结果进一步表明,SLEEM 和深度学习可以很好地作为分析纳米级材料的工具。所介绍方法的最大优势在于其可用性,因为大多数现代扫描电子显微镜都能在低能量下工作,而且深度学习方法已在许多领域得到广泛应用。
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引用次数: 0
Strain visualization using large-angle convergent-beam electron diffraction 利用大角度会聚束电子衍射实现应变可视化
IF 2.2 3区 工程技术 Q2 MICROSCOPY Pub Date : 2024-04-10 DOI: 10.1016/j.ultramic.2024.113966
Fumihiko Uesugi , Chiaki Tanii , Naoyuki Sugiyama , Masaki Takeguchi

In this study, we report a strain visualization method using large-angle convergent-beam electron diffraction (LACBED).1 We compare the proposed method with the strain maps acquired via STEM-NBD, a combination of scanning transmission electron microscopy (STEM) and nanobeam electron diffraction (NBD). Although STEM-NBD can precisely measure the lattice parameters, it requires a large amount of data and personal computer (PC) resources to obtain a two-dimensional strain map. Deficiency lines in the transmitted disk of LACBED reflect the crystalline structure information and move, curve, or disappear in the deformed area. Properly setting the optical conditions makes it possible to acquire real-space images over a broad area in conjunction with deficiency lines on the transmitted disk. The proposed method acquires images by changing the relative position between the specimen and the deficiency line and can grasp the strain information with a small number of images. In addition, the proposed method does not require high-resolution images. It can reduce the required PC memory or storage consumption in comparison with that of STEM-NBD, which requires a high-resolution diffraction pattern (DP) from each point of the region of interest. Compared with the two-dimensional maps of LACBED and NBD, NBD could detect large distortions in the area where the deficiency line curved, moved, or disappeared. The curving or moving direction of the deficiency line is qualitatively consistent with the NBD results. If quantitative strain values are not essential, strain visualization using LACBED can be considered an effective technique. We believe that the strain information of a sample can be obtained effectively using both methods.

在本研究中,我们报告了一种利用大角度汇聚束电子衍射(LACBED)的应变可视化方法1 。我们将所提出的方法与通过 STEM-NBD (扫描透射电子显微镜(STEM)和纳米束电子衍射(NBD)的组合)获得的应变图进行了比较。虽然 STEM-NBD 可以精确测量晶格参数,但它需要大量数据和个人计算机(PC)资源才能获得二维应变图。LACBED 透射盘中的缺陷线反映了晶体结构信息,并在变形区域移动、弯曲或消失。通过适当设置光学条件,可以结合透射盘上的缺陷线获取大范围的实空间图像。建议的方法通过改变试样与缺损线之间的相对位置来获取图像,只需少量图像即可掌握应变信息。此外,建议的方法不需要高分辨率图像。与需要从感兴趣区域的每个点获取高分辨率衍射图样(DP)的 STEM-NBD 相比,它可以减少所需的 PC 内存或存储消耗。与 LACBED 和 NBD 的二维地图相比,NBD 可以检测到缺陷线弯曲、移动或消失区域的大变形。缺陷线的弯曲或移动方向与 NBD 的结果在性质上是一致的。如果定量应变值不是必需的,使用 LACBED 进行应变可视化也不失为一种有效的技术。我们相信,使用这两种方法都能有效地获得样品的应变信息。
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引用次数: 0
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Ultramicroscopy
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