Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117837
Eklavy Vashist, Souvik Ghosh, Ambarish Ghosh
In addition to the nanoscale electric field enhancement in plasmonic structures, there is an increase in the local temperature at the nanoparticle surface due to light absorption at resonance, resulting in Thermoplasmonics effects. Therefore, understanding and quantifying the local heating and resultant effects with nanoscale spatial resolution is crucial for engineering plasmonic devices for various applications. Here we report plasmonic heating of Au nanoparticles using a resonant light illumination and an estimation of associated temperature rise using Nitrogen-Vacancy (NV) centers in nanodiamonds (NDs). A custom-built wide field measurement setup detects and analyses the modulation of fluorescence spectra from the NDs close to the plasmonic hotspots. The plasmonic resonance absorption in Au nanoparticles and associated local heating is also studied using COMSOL Multiphysics which matches closely with our experimental results and validates our measurement system. This setup allows to make a thermal map of the system without being limited by diffraction and can be extended to other systems.
{"title":"Quantum sensing of temperature increase due to thermoplasmonic effects using fluorescent nanodiamonds","authors":"Eklavy Vashist, Souvik Ghosh, Ambarish Ghosh","doi":"10.1109/ICEE56203.2022.10117837","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117837","url":null,"abstract":"In addition to the nanoscale electric field enhancement in plasmonic structures, there is an increase in the local temperature at the nanoparticle surface due to light absorption at resonance, resulting in Thermoplasmonics effects. Therefore, understanding and quantifying the local heating and resultant effects with nanoscale spatial resolution is crucial for engineering plasmonic devices for various applications. Here we report plasmonic heating of Au nanoparticles using a resonant light illumination and an estimation of associated temperature rise using Nitrogen-Vacancy (NV) centers in nanodiamonds (NDs). A custom-built wide field measurement setup detects and analyses the modulation of fluorescence spectra from the NDs close to the plasmonic hotspots. The plasmonic resonance absorption in Au nanoparticles and associated local heating is also studied using COMSOL Multiphysics which matches closely with our experimental results and validates our measurement system. This setup allows to make a thermal map of the system without being limited by diffraction and can be extended to other systems.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128378754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117767
Abhijit Das, D. P. Samajdar
In this paper, we have investigated the effect of the Graphene Oxide (GO) interfacial layer (IL) inserted between the absorber layer and Electron Transport Layer (ETL) in lead (Pb)-free all inorganic CsGeI3-based perovskite solar cells (PSCs) using solar cell simulator capacitance software (SCAPS-ID). The performance parameters of the FTO/Ti02/GO/CsGeI3/P3HT PSC device structure have been studied thoroughly, by changing the thickness of the active layer and IL, bulk defect density with defect energy levels of the absorber layer, band gap variation of the Graphene Oxide thin film and the variation of shunt and series resistance. It has been found that the introduction of GO interlayer in the PSC improved the device efficiency by ~ 6%. This is mainly due to the passivation of trap states (i.e. reducing charge recombination and ion migration), efficient band alignment and improved charge injection at the Perovskite/ETL interface. We have reported an optimized power conversion efficiency (PCE) (%) value of 20.03% for the proposed device structure and observed a remarkable improvement in performance parameters.
{"title":"Simulation of CsGeI3-based perovskite solar cells using Graphene Oxide interfacial layer for improved device performance","authors":"Abhijit Das, D. P. Samajdar","doi":"10.1109/ICEE56203.2022.10117767","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117767","url":null,"abstract":"In this paper, we have investigated the effect of the Graphene Oxide (GO) interfacial layer (IL) inserted between the absorber layer and Electron Transport Layer (ETL) in lead (Pb)-free all inorganic CsGeI3-based perovskite solar cells (PSCs) using solar cell simulator capacitance software (SCAPS-ID). The performance parameters of the FTO/Ti02/GO/CsGeI3/P3HT PSC device structure have been studied thoroughly, by changing the thickness of the active layer and IL, bulk defect density with defect energy levels of the absorber layer, band gap variation of the Graphene Oxide thin film and the variation of shunt and series resistance. It has been found that the introduction of GO interlayer in the PSC improved the device efficiency by ~ 6%. This is mainly due to the passivation of trap states (i.e. reducing charge recombination and ion migration), efficient band alignment and improved charge injection at the Perovskite/ETL interface. We have reported an optimized power conversion efficiency (PCE) (%) value of 20.03% for the proposed device structure and observed a remarkable improvement in performance parameters.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134102263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118213
Akhilesh Rawat, Anjali Goel, Brajesh Rawat
In this work, we propose a more accurate description of the interface trap in the MoS2 field-effect transistor using a quantum-mechanical modeling framework. Introducing an interface trap based on tight-binding parameter substitution at an atomic site is found to be a more effective way to include its effect on the device electrostatics and the carrier transport. Further, lower energy interface traps from conduction band are found to significantly impact the device performance, with severe degradation in subthreshold slope and ON-current. Our proposed model reveals that charge trapping in the interface trap causes substantial degradation in the drive current for high gate biases, whereas source-to-drain tunneling through trap limits the performance for low gate biases.
{"title":"Performance of Two-Dimensional MoS2 Field-Effect Transistor in the Presence of Oxide-Channel Imperfection","authors":"Akhilesh Rawat, Anjali Goel, Brajesh Rawat","doi":"10.1109/ICEE56203.2022.10118213","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118213","url":null,"abstract":"In this work, we propose a more accurate description of the interface trap in the MoS2 field-effect transistor using a quantum-mechanical modeling framework. Introducing an interface trap based on tight-binding parameter substitution at an atomic site is found to be a more effective way to include its effect on the device electrostatics and the carrier transport. Further, lower energy interface traps from conduction band are found to significantly impact the device performance, with severe degradation in subthreshold slope and ON-current. Our proposed model reveals that charge trapping in the interface trap causes substantial degradation in the drive current for high gate biases, whereas source-to-drain tunneling through trap limits the performance for low gate biases.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134453702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118127
B. U, Bidisha Nath, Nagahanumaiah, Praveen C Ramamurthy
The Tin-based perovskite is an encouraging material in the development of non-toxic solar cell application, but its performance is limited by the poor chemical stability against oxygen and moisture. Therefore, tin-based perovskite solar cells are mostly fabricated in inverted planar device structures and the selection of underlying hole transport material plays a significant role in device stability. In this work, we report the comparison study between a metal oxide, nickel oxide, and polymeric poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) as a hole transport layer on device efficiency and stability of tin-based PSC. We obtained comparatively higher power conversion efficiency (PCE) with NiOx than others, however, the solar cell with PEDOT: PSS is more stable rather than NiOx for the duration of 900 hrs in a nitrogen ambient, without encapsulation.
{"title":"Comparison of polymeric and metal oxide hole transport material on the stability of FASnI3 perovskite solar cell","authors":"B. U, Bidisha Nath, Nagahanumaiah, Praveen C Ramamurthy","doi":"10.1109/ICEE56203.2022.10118127","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118127","url":null,"abstract":"The Tin-based perovskite is an encouraging material in the development of non-toxic solar cell application, but its performance is limited by the poor chemical stability against oxygen and moisture. Therefore, tin-based perovskite solar cells are mostly fabricated in inverted planar device structures and the selection of underlying hole transport material plays a significant role in device stability. In this work, we report the comparison study between a metal oxide, nickel oxide, and polymeric poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) as a hole transport layer on device efficiency and stability of tin-based PSC. We obtained comparatively higher power conversion efficiency (PCE) with NiOx than others, however, the solar cell with PEDOT: PSS is more stable rather than NiOx for the duration of 900 hrs in a nitrogen ambient, without encapsulation.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133125448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117639
Vinod Naik Bhukya, Rik Dey, Y. Chauhan
A micromagnetic simulation study has been performed to analyze the magnetization switching dynamics of a ferromagnet on a topological insulator surface. The micromagnetic simulation is based on an analytical solution obtained for the spin-orbit torque which is position-dependent due to current shunting in the bilayer. The micromagnetic simulation is carried out using Ubermag, which is a python-language-based interface and uses OOMMF as the computational backend. From the simulations, switching times are extracted for the position-dependent case as well as various limiting cases. It is found that the switching time for the position-dependent case approaches the parallel transport limit for large values of the normalized tunneling rate and large length of the device, and the spin-orbit torque efficiency can be greater than 1 in those cases.
{"title":"Micromagnetic Simulations of Magnetization Dynamics Due to Position-dependent Spin-Orbit Torque From Topological Insulator","authors":"Vinod Naik Bhukya, Rik Dey, Y. Chauhan","doi":"10.1109/ICEE56203.2022.10117639","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117639","url":null,"abstract":"A micromagnetic simulation study has been performed to analyze the magnetization switching dynamics of a ferromagnet on a topological insulator surface. The micromagnetic simulation is based on an analytical solution obtained for the spin-orbit torque which is position-dependent due to current shunting in the bilayer. The micromagnetic simulation is carried out using Ubermag, which is a python-language-based interface and uses OOMMF as the computational backend. From the simulations, switching times are extracted for the position-dependent case as well as various limiting cases. It is found that the switching time for the position-dependent case approaches the parallel transport limit for large values of the normalized tunneling rate and large length of the device, and the spin-orbit torque efficiency can be greater than 1 in those cases.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129053864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117969
Sonalie Ahirwar, T. Pramanik
Magnetic immunity is an important reliability metric for spin-transfer-torque random-access memory (STT-RAM). The presence of an external magnetic field may cause retention fails in stand-by mode or switching fails during the write operation. Specifically, active write mode magnetic immunity has not been well explored although it was reported to be the limiter in deciding the magnetic immunity metrics. Here, we present a simulation study of stand-by bit error rates (BER) and write error rates (WER) under the influence of external magnetic field perturbation. Results show that the effect of the external magnetic field is more pronounced when it is applied along a direction non-collinear to the easy axis of the magnet. Variation in the stand-by BER is found to follow the Stoner-Wohlfarth model. It is also observed that the active write mode BER may increase by orders of magnitude for specific directions of applied fields depending on the applied write current and magnetic field strength. The variation in WER is explained by the formation of additional zero-torque “stagnation points” on the magnetization unit sphere. The results show the need for careful characterization of both the stand-by mode and the active write mode while measuring the magnetic immunity of the STT-RAM cell.
{"title":"A simulation study of stand-by and active write mode magnetic immunity of perpendicular spin-transfer-torque random-access memory","authors":"Sonalie Ahirwar, T. Pramanik","doi":"10.1109/ICEE56203.2022.10117969","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117969","url":null,"abstract":"Magnetic immunity is an important reliability metric for spin-transfer-torque random-access memory (STT-RAM). The presence of an external magnetic field may cause retention fails in stand-by mode or switching fails during the write operation. Specifically, active write mode magnetic immunity has not been well explored although it was reported to be the limiter in deciding the magnetic immunity metrics. Here, we present a simulation study of stand-by bit error rates (BER) and write error rates (WER) under the influence of external magnetic field perturbation. Results show that the effect of the external magnetic field is more pronounced when it is applied along a direction non-collinear to the easy axis of the magnet. Variation in the stand-by BER is found to follow the Stoner-Wohlfarth model. It is also observed that the active write mode BER may increase by orders of magnitude for specific directions of applied fields depending on the applied write current and magnetic field strength. The variation in WER is explained by the formation of additional zero-torque “stagnation points” on the magnetization unit sphere. The results show the need for careful characterization of both the stand-by mode and the active write mode while measuring the magnetic immunity of the STT-RAM cell.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129068882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117996
Gargi Konwar, Sachin Rahi, S. P. Tiwari
Flexible electronics utilizing emerging edible natural materials as device components lead a path towards the development of cost-effective, renewable, sustainable, and eco-friendly smart systems. Here, an edible and natural biopolymer egg albumen was explored with a thin high-k HfO2 layer to form a hybrid gate dielectric layer for the demonstration of flexible organic transistors. The thin high-k dielectric layer enables the devices to be operated at low voltage while the biopolymer layer helps in forming a better dielectric semiconductor interface. The fabricated devices have shown excellent p-channel characteristics at a low operating voltage of -5 V. Moreover, these devices exhibited good electrical and operational stability to be used in practical applications. These findings suggest that this proposed gate dielectric combination can be an interesting and potential component for flexible organic devices.
{"title":"Flexible Organic Transistors with Hybrid Gate Dielectric Consisting Albumen as an Edible Component","authors":"Gargi Konwar, Sachin Rahi, S. P. Tiwari","doi":"10.1109/ICEE56203.2022.10117996","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117996","url":null,"abstract":"Flexible electronics utilizing emerging edible natural materials as device components lead a path towards the development of cost-effective, renewable, sustainable, and eco-friendly smart systems. Here, an edible and natural biopolymer egg albumen was explored with a thin high-k HfO2 layer to form a hybrid gate dielectric layer for the demonstration of flexible organic transistors. The thin high-k dielectric layer enables the devices to be operated at low voltage while the biopolymer layer helps in forming a better dielectric semiconductor interface. The fabricated devices have shown excellent p-channel characteristics at a low operating voltage of -5 V. Moreover, these devices exhibited good electrical and operational stability to be used in practical applications. These findings suggest that this proposed gate dielectric combination can be an interesting and potential component for flexible organic devices.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129271703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118107
S. Chakraborty, V. Awasthi, R. Goel, S. Dubey
In this work, we present a simple, economically viable technique of chemically synthesizing silver-decorated reduced graphene (Ag-rG) and its application in SERS analyte detection. We detected R6G (20 µL) up to 10–6 M using Ag-rG as a SERS-active substrate. R6G, a dye, is irradiated by a laser source (λ =785nm) and Raman spectra are acquired using integrated Raman setup (Renishaw). Ag-rG can be used for in-situ explosive detection, food/water adulterant detection, bio-diagnostics, narco-analysis, etc.
{"title":"Chemical Synthesis and Application of Silver Decorated Reduced Graphene as an Economically Viable Surface Enhanced Raman Scattering Based Substrate for Detection of Analytes in Trace Quantities","authors":"S. Chakraborty, V. Awasthi, R. Goel, S. Dubey","doi":"10.1109/ICEE56203.2022.10118107","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118107","url":null,"abstract":"In this work, we present a simple, economically viable technique of chemically synthesizing silver-decorated reduced graphene (Ag-rG) and its application in SERS analyte detection. We detected R6G (20 µL) up to 10–6 M using Ag-rG as a SERS-active substrate. R6G, a dye, is irradiated by a laser source (λ =785nm) and Raman spectra are acquired using integrated Raman setup (Renishaw). Ag-rG can be used for in-situ explosive detection, food/water adulterant detection, bio-diagnostics, narco-analysis, etc.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116710689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117759
Aneesh M. Joseph
The design of T -Gate is crucial for the performance of AlGaN/GaN power amplifiers. Optimizing aT-gate reproducibly is a challenge on Gallium Nitride (GaN) on Silicon Carbide (SiC) due to the charging of the substrate. Single-step electron-beam lithography (EBL) has been demonstrated by engineering by dose and photoresist parameters.
{"title":"Fabrication and optimization of T -gate for high performance HEMT and MMIC devices","authors":"Aneesh M. Joseph","doi":"10.1109/ICEE56203.2022.10117759","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117759","url":null,"abstract":"The design of T -Gate is crucial for the performance of AlGaN/GaN power amplifiers. Optimizing aT-gate reproducibly is a challenge on Gallium Nitride (GaN) on Silicon Carbide (SiC) due to the charging of the substrate. Single-step electron-beam lithography (EBL) has been demonstrated by engineering by dose and photoresist parameters.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115228125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117799
R. Chakraborty, Nilashis Pal, B. Pal
An ideal ferroelectric gate dielectric based thin film transistor (FeTFT) can offer a memory device of random access, high speed, low power, high density and nonvolatility. Lithium niobate (LiNbO3) being a well-known ferroelectric material, but its implementation in FeTFT has not been explored much. This work is reporting a methodology of LiNbO3 based FeTFT device fabrication by solution processed technique. The carrier mobility of 9.6 cm2V-1s-1 and current ON/OFF ratio of 1.9x103 are attained with this LiNbO3 ferroelectric gate dielectric based FeTFT device. This work also demonstrates a reasonably good memory retention time of a ferroelectric thin film transistor.
{"title":"Solution-Processed LiNbO3 Thin Film as a Gate Dielectric of a Ferroelectric Thin Film Transistor","authors":"R. Chakraborty, Nilashis Pal, B. Pal","doi":"10.1109/ICEE56203.2022.10117799","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117799","url":null,"abstract":"An ideal ferroelectric gate dielectric based thin film transistor (FeTFT) can offer a memory device of random access, high speed, low power, high density and nonvolatility. Lithium niobate (LiNbO<inf>3</inf>) being a well-known ferroelectric material, but its implementation in FeTFT has not been explored much. This work is reporting a methodology of LiNbO<inf>3</inf> based FeTFT device fabrication by solution processed technique. The carrier mobility of 9.6 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> and current ON/OFF ratio of 1.9x10<sup>3</sup> are attained with this LiNbO<inf>3</inf> ferroelectric gate dielectric based FeTFT device. This work also demonstrates a reasonably good memory retention time of a ferroelectric thin film transistor.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125581264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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