Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117905
N. Batra, Bhaskar Mitra
In this work, we report the mechanical coupling of the cantilever beams in a cascaded configuration employed using long and thin spring-like structures to increase the bandwidth for vibration energy harvesting. The outcomes of designing uni-beam, dual-beam, tri-beam, and quad-beam coupled energy harvesters are compared using COMSOL. Simulation results indicated that quad-beam coupled energy harvesters had a bandwidth of 8.9 Hz. Physical devices were fabricated and tested using PVDF-TrFE piezoelectric material.
{"title":"Mechanically Coupled Cantilever Beam Structure for Wideband Piezoelectric Energy Harvesting","authors":"N. Batra, Bhaskar Mitra","doi":"10.1109/ICEE56203.2022.10117905","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117905","url":null,"abstract":"In this work, we report the mechanical coupling of the cantilever beams in a cascaded configuration employed using long and thin spring-like structures to increase the bandwidth for vibration energy harvesting. The outcomes of designing uni-beam, dual-beam, tri-beam, and quad-beam coupled energy harvesters are compared using COMSOL. Simulation results indicated that quad-beam coupled energy harvesters had a bandwidth of 8.9 Hz. Physical devices were fabricated and tested using PVDF-TrFE piezoelectric material.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127353949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117721
Shivangi Srivastava, Praveen C Ramamurthy
Organic electronic devices gained much interest in the last few decades due to their various application in biosensing, gas sensing, photo-sensing, memory device, synaptic devices for neuromorphic computing, flexible electronics application, wearable device, LED, and OPV. Despite all these various applications, organic electronic devices lack behind their inorganic counterpart because of their poor environmental stability. In this study, the effect of light on P3HT OFET was observed in atmospheric conditions. Electrical characteristics showed that p-type doping is high in the presence of light. It was also suggested by the red shift in Raman data and by the change in surface potential after light exposure by Kelvin Probe Force Microscopy analysis.
{"title":"Effect of Light on the p-type Doping of P3HT OFET by Oxygen","authors":"Shivangi Srivastava, Praveen C Ramamurthy","doi":"10.1109/ICEE56203.2022.10117721","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117721","url":null,"abstract":"Organic electronic devices gained much interest in the last few decades due to their various application in biosensing, gas sensing, photo-sensing, memory device, synaptic devices for neuromorphic computing, flexible electronics application, wearable device, LED, and OPV. Despite all these various applications, organic electronic devices lack behind their inorganic counterpart because of their poor environmental stability. In this study, the effect of light on P3HT OFET was observed in atmospheric conditions. Electrical characteristics showed that p-type doping is high in the presence of light. It was also suggested by the red shift in Raman data and by the change in surface potential after light exposure by Kelvin Probe Force Microscopy analysis.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123194113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118345
Ayushi Sharma, Yawar Hayat Zarkob, R. Goel, Chetan Kumar Dabhi, G. Pahwa, Chenming Hu, Y. Chauhan
This paper briefly discusses all the recent enhancements made in the BSIM-BULK MOSFET model. It is a charge-based industry-standard model developed by the BSIM group, an advanced version of BSIM4 model (threshold voltage-based). Initially, BSIM-BULK was developed for low-voltage devices and to enhance its capability for high voltage operations, a drift resistance-based model is also included as one of the important enhancements in its recent version. Moreover, the new model for bulk charge effect in the latest version improves the fitting flexibility of current and capacitance models. Several other noticeable enhancements are body bias and gate bias dependence addition to the high voltage model, improved flicker noise model of MOSFET and EDGEFET, adding flicker noise model due to external S/D resistances, and drain-body diode junction current splitting in HVMOS. All the enhancements have been validated with the experimental data and also passed the Gummel and AC symmetry tests. The latest model has better accuracy, convergence, and performance compared to previous versions of BSIM-BULK model.
{"title":"Recent Enhancements in the Standard BSIM-BULK MOSFET Model","authors":"Ayushi Sharma, Yawar Hayat Zarkob, R. Goel, Chetan Kumar Dabhi, G. Pahwa, Chenming Hu, Y. Chauhan","doi":"10.1109/ICEE56203.2022.10118345","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118345","url":null,"abstract":"This paper briefly discusses all the recent enhancements made in the BSIM-BULK MOSFET model. It is a charge-based industry-standard model developed by the BSIM group, an advanced version of BSIM4 model (threshold voltage-based). Initially, BSIM-BULK was developed for low-voltage devices and to enhance its capability for high voltage operations, a drift resistance-based model is also included as one of the important enhancements in its recent version. Moreover, the new model for bulk charge effect in the latest version improves the fitting flexibility of current and capacitance models. Several other noticeable enhancements are body bias and gate bias dependence addition to the high voltage model, improved flicker noise model of MOSFET and EDGEFET, adding flicker noise model due to external S/D resistances, and drain-body diode junction current splitting in HVMOS. All the enhancements have been validated with the experimental data and also passed the Gummel and AC symmetry tests. The latest model has better accuracy, convergence, and performance compared to previous versions of BSIM-BULK model.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131938674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117630
Manshu Bishnoi, R. Bhattacharya, V. Aggarwal, T. Kukal, Jonathan Smith, S. Aniruddhan
A comprehensive top-down system design methodology is presented and supported with a design of a Front-End Module (FEM) for 5G mobile applications targeting 24GHz-29GHz. While adopting package and PCB floor-planning and thermal challenges early in the design, a link budget analysis of a FEM in a system simulator followed by an implementation in GlobalFoundries' 22nm FDSOI process is reported with a focus on novel architectures to address system constraints. The FEM shows an excellent correlation between simulations and measurements and is further characterized post silicon by applying actual 5G signals in a real-time measurement mimicked simulation environment. A unified environment for co-designing and analysing the IC and package system is also described.
{"title":"System Budgeting to System Realisation - A 22nm FDSOI 5G mmWave Front-End Module (FEM) Perspective","authors":"Manshu Bishnoi, R. Bhattacharya, V. Aggarwal, T. Kukal, Jonathan Smith, S. Aniruddhan","doi":"10.1109/ICEE56203.2022.10117630","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117630","url":null,"abstract":"A comprehensive top-down system design methodology is presented and supported with a design of a Front-End Module (FEM) for 5G mobile applications targeting 24GHz-29GHz. While adopting package and PCB floor-planning and thermal challenges early in the design, a link budget analysis of a FEM in a system simulator followed by an implementation in GlobalFoundries' 22nm FDSOI process is reported with a focus on novel architectures to address system constraints. The FEM shows an excellent correlation between simulations and measurements and is further characterized post silicon by applying actual 5G signals in a real-time measurement mimicked simulation environment. A unified environment for co-designing and analysing the IC and package system is also described.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121340913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117890
Smruti Mahapatra, Debasish Mondal, Nagaphani B. Aetukuri
Electron-electron interactions in transition metal oxides can enable novel macroscopic properties like metal-to-insulator transitions. Using such materials in field effect transistors can potentially enhance the current state-of-the-art devices by providing unique means to overcome their conventional limits. Deposition of high quality thin films and the device fabrication technique play an important role in the device response to an electric field. In this work, we present the deposition of high quality thin films of Vanadium dioxide (V02) and a complete device fabrication protocol for an electric double-layer transistor (EDL T) using VO2 as the channel material. Further, we discuss the electric field-induced metal-to-insulator transition (E-MIT) in the VO2 thin film.
{"title":"Fabrication of EDLTs to electrochemically control metal-insulator transition in VO2","authors":"Smruti Mahapatra, Debasish Mondal, Nagaphani B. Aetukuri","doi":"10.1109/ICEE56203.2022.10117890","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117890","url":null,"abstract":"Electron-electron interactions in transition metal oxides can enable novel macroscopic properties like metal-to-insulator transitions. Using such materials in field effect transistors can potentially enhance the current state-of-the-art devices by providing unique means to overcome their conventional limits. Deposition of high quality thin films and the device fabrication technique play an important role in the device response to an electric field. In this work, we present the deposition of high quality thin films of Vanadium dioxide (V02) and a complete device fabrication protocol for an electric double-layer transistor (EDL T) using VO2 as the channel material. Further, we discuss the electric field-induced metal-to-insulator transition (E-MIT) in the VO2 thin film.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131142889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118348
Anuja Singh, B. Muralidharan
For the construction of the absorber region in infrared photodetectors, type-II Superlattice is favored over traditional HgCdTe due to its band-tunability. The generation recombination processes that result in noise-inducing currents in these infrared detectors are a significant performance bottleneck, so over the past few years, there have been a lot of research efforts aimed at mitigating these processes to ensure high-temperature operation with improved figure-of-merits. In this work, we showcase the electron and hole barriers for type-II superlattice absorbers to reduce these prime dark current components in infrared photodetectors. Here, we investigate the electronic band properties of InAs/AlSb, GaSb/AlSb, and M-superlattice (InAS/GaSb/AlSb/GaSb) materials as carrier-impending barriers by employing the 8 band k.p method and the non-equilibrium green's function approach. In this article, we demonstrate that InAs/AlSb (GaSb/AlSb) only ever function as a hole (electron) barrier and never as an electron (hole) barrier. Additionally, we show that we can achieve both the electron and hole barriers by modifying the material widths in the M-superlattice.
{"title":"Design of electron and hole barriers for type-II superlattice absorber for infrared photodetection","authors":"Anuja Singh, B. Muralidharan","doi":"10.1109/ICEE56203.2022.10118348","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118348","url":null,"abstract":"For the construction of the absorber region in infrared photodetectors, type-II Superlattice is favored over traditional HgCdTe due to its band-tunability. The generation recombination processes that result in noise-inducing currents in these infrared detectors are a significant performance bottleneck, so over the past few years, there have been a lot of research efforts aimed at mitigating these processes to ensure high-temperature operation with improved figure-of-merits. In this work, we showcase the electron and hole barriers for type-II superlattice absorbers to reduce these prime dark current components in infrared photodetectors. Here, we investigate the electronic band properties of InAs/AlSb, GaSb/AlSb, and M-superlattice (InAS/GaSb/AlSb/GaSb) materials as carrier-impending barriers by employing the 8 band k.p method and the non-equilibrium green's function approach. In this article, we demonstrate that InAs/AlSb (GaSb/AlSb) only ever function as a hole (electron) barrier and never as an electron (hole) barrier. Additionally, we show that we can achieve both the electron and hole barriers by modifying the material widths in the M-superlattice.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134458169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117804
Meghana Jayaraj, M. Mamidipaka, Karthikeyan Doraiswami, S. Nimmagadda
The advancement of process nodes coupled with an increase in signal density has magnified the prominence of crosstalk in timing convergence. To mitigate the effect of crosstalk, the critical interfaces are being implemented as interleaved buses. However, when pre-Silicon timing analysis is done, PrimeTime crosstalk calculation does not consider the physical topology of the paths, which leads to a lot of pessimism being introduced in timing analysis and closure. This paper includes a study of the reasons for the pessimism in crosstalk analysis by PrimeTime and elaborates an algorithm to compute and remove the pessimism in crosstalk calculation outside of the tool.
{"title":"Primetime Crosstalk Delay Pessimism Removal on Interleaved Buses","authors":"Meghana Jayaraj, M. Mamidipaka, Karthikeyan Doraiswami, S. Nimmagadda","doi":"10.1109/ICEE56203.2022.10117804","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117804","url":null,"abstract":"The advancement of process nodes coupled with an increase in signal density has magnified the prominence of crosstalk in timing convergence. To mitigate the effect of crosstalk, the critical interfaces are being implemented as interleaved buses. However, when pre-Silicon timing analysis is done, PrimeTime crosstalk calculation does not consider the physical topology of the paths, which leads to a lot of pessimism being introduced in timing analysis and closure. This paper includes a study of the reasons for the pessimism in crosstalk analysis by PrimeTime and elaborates an algorithm to compute and remove the pessimism in crosstalk calculation outside of the tool.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133676635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117848
Divij Ramesh Nalge, T. Karmakar, S. Bhattacharya, Krishnan Balasubramanian
Engineered defects in graphene films using chemical etching or ion beam atomic removal techniques have been used for molecular sieves with tremendous potential. However, scalability over large areas is a hurdle for most of the techniques previously reported. Here we investigate, using first principles, the defect structure of graphene grain boundaries for their potential to act as molecular sieves. We show that, much like pristine graphene grains, general grain boundaries of graphene with (1,0) dislocations are also impermeable to water. Larger defects, when forcefully engineered, turn hydrophilic and can permeate water with a reasonable kinetic barrier.
{"title":"Engineered Graphene Grain Boundaries as Molecular Sieves for Water Desalination","authors":"Divij Ramesh Nalge, T. Karmakar, S. Bhattacharya, Krishnan Balasubramanian","doi":"10.1109/ICEE56203.2022.10117848","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117848","url":null,"abstract":"Engineered defects in graphene films using chemical etching or ion beam atomic removal techniques have been used for molecular sieves with tremendous potential. However, scalability over large areas is a hurdle for most of the techniques previously reported. Here we investigate, using first principles, the defect structure of graphene grain boundaries for their potential to act as molecular sieves. We show that, much like pristine graphene grains, general grain boundaries of graphene with (1,0) dislocations are also impermeable to water. Larger defects, when forcefully engineered, turn hydrophilic and can permeate water with a reasonable kinetic barrier.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133699727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10117742
Durgesh Banswar, R. Sahu, Md Shamim Hasan, Sahil Singh, S. Sapra, Tapajyoti Das Gupta, Ankur Goswami, Krishnan Balasubramanian
Plasmonic effects in metal nanoparticles enhancing near-field light-matter interaction have multiple applications in bright sources and sensing. Gallium (Ga) is an important plasmonic material allowing for flexible electronics with facile room-temperature synthesis and tunable resonances in visible spectrum range. Here, in addition to showing a three-fold near-field plasmonic enhancement observable in Raman spectroscope, we demonstrate a spectrally selective strong Purcell enhancement of the B-exciton series in chemically synthesized MoSe2 flakes.
{"title":"Large Purcell Enhancement in Monolayer MoSe2 Flakes Using Ga N anodroplets","authors":"Durgesh Banswar, R. Sahu, Md Shamim Hasan, Sahil Singh, S. Sapra, Tapajyoti Das Gupta, Ankur Goswami, Krishnan Balasubramanian","doi":"10.1109/ICEE56203.2022.10117742","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10117742","url":null,"abstract":"Plasmonic effects in metal nanoparticles enhancing near-field light-matter interaction have multiple applications in bright sources and sensing. Gallium (Ga) is an important plasmonic material allowing for flexible electronics with facile room-temperature synthesis and tunable resonances in visible spectrum range. Here, in addition to showing a three-fold near-field plasmonic enhancement observable in Raman spectroscope, we demonstrate a spectrally selective strong Purcell enhancement of the B-exciton series in chemically synthesized MoSe2 flakes.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132038138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-11DOI: 10.1109/ICEE56203.2022.10118304
Aditya Tripathi, S. Kruk, Y. Kivshar
We combine the concepts of engineering the efficiency of light trapping (meta-photonics) and those of light matter interaction (engineering gain media) to demonstrate functioning active nanophotonic devices like lasers, light sources, and switchable devices.
{"title":"Active and lasing dielectric metasurfaces","authors":"Aditya Tripathi, S. Kruk, Y. Kivshar","doi":"10.1109/ICEE56203.2022.10118304","DOIUrl":"https://doi.org/10.1109/ICEE56203.2022.10118304","url":null,"abstract":"We combine the concepts of engineering the efficiency of light trapping (meta-photonics) and those of light matter interaction (engineering gain media) to demonstrate functioning active nanophotonic devices like lasers, light sources, and switchable devices.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129434318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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