Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393159
V. Vezin, C. Isobe, O. Boissière, P. Baumann, U. Weber, G. Barbar, J. Lindner
The deposition of metal oxide thin films by metal-organic chemical vapor deposition is a good solution for the fabrication of high-k gate oxide and ferroelectric oxides for ferroelectric random access memories. The main challenges to be addressed in order to meet mass-production worthiness of this technique are reproducible and clean vaporization and transport of the precursor materials as well as process optimization for high quality thin films. The use of short pulses for the delivery of liquid precursor presents some advantages for meeting these requirements.
{"title":"Atomic Vapor Deposition (AVD®) for High-k Dielectric and Ferroelectric films","authors":"V. Vezin, C. Isobe, O. Boissière, P. Baumann, U. Weber, G. Barbar, J. Lindner","doi":"10.1109/ISAF.2007.4393159","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393159","url":null,"abstract":"The deposition of metal oxide thin films by metal-organic chemical vapor deposition is a good solution for the fabrication of high-k gate oxide and ferroelectric oxides for ferroelectric random access memories. The main challenges to be addressed in order to meet mass-production worthiness of this technique are reproducible and clean vaporization and transport of the precursor materials as well as process optimization for high quality thin films. The use of short pulses for the delivery of liquid precursor presents some advantages for meeting these requirements.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129065909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393303
T. Hoshina, S. Wada, Y. Kuroiwa, H. Kakemoto, T. Tsurumi
Almost impurity and defect-free barium titanate (BaTiO3) nanoparticles with various sizes from 20 to 430 nm were prepared using 2-step thermal decomposition method. The nano-structures of these particles were analyzed using a synchrotron radiation X-ray diffraction (XRD). As a result, it was found that the BaTiO3 nanoparticles had composite structure consisted of (a) internal tetragonal layer, (b) Gradient-Lattice-Strain Layer (GLSL) and (c) surface cubic layer.
{"title":"Composite Structure and Size Effect of Barium Titanate Nanoparticles","authors":"T. Hoshina, S. Wada, Y. Kuroiwa, H. Kakemoto, T. Tsurumi","doi":"10.1109/ISAF.2007.4393303","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393303","url":null,"abstract":"Almost impurity and defect-free barium titanate (BaTiO3) nanoparticles with various sizes from 20 to 430 nm were prepared using 2-step thermal decomposition method. The nano-structures of these particles were analyzed using a synchrotron radiation X-ray diffraction (XRD). As a result, it was found that the BaTiO3 nanoparticles had composite structure consisted of (a) internal tetragonal layer, (b) Gradient-Lattice-Strain Layer (GLSL) and (c) surface cubic layer.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116117049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393381
T. Kobayashi, R. Kondo, K. Nakamura, M. Ichiki, R. Maeda
We have fabricated piezoelectric micro cantilevers using LaNiO3 (LNO) buffered PZT thin film through microelectromechanical systems (MEMS) micro fabrication process. The micro cantilevers have been fabricated from Pt/Ti/LNO/PZT/LNO/Pt/Ti/SiO2 or Pt/Ti/PZT/Pt/Ti/SiO2 multilayers deposited on SOI wafers. The PZT thin films without LNO thin films were degraded through the MEMS micro fabrication process. We have found that the LNO thin films can avoid the degradation. DC actuation of the micro cantilevers using LNO buffered PZT thin films has resulted in symmetric butterfly curve. The transverse piezoelectric constant of LNO buffered PZT thin films (-d31 = 120 pm/V) is higher than that of the PZT thin films without LNO thin films (70 pm/V).
{"title":"MEMS-based piezoelectric micro cantilever using LaNiO3 buffered PZT thin film","authors":"T. Kobayashi, R. Kondo, K. Nakamura, M. Ichiki, R. Maeda","doi":"10.1109/ISAF.2007.4393381","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393381","url":null,"abstract":"We have fabricated piezoelectric micro cantilevers using LaNiO3 (LNO) buffered PZT thin film through microelectromechanical systems (MEMS) micro fabrication process. The micro cantilevers have been fabricated from Pt/Ti/LNO/PZT/LNO/Pt/Ti/SiO2 or Pt/Ti/PZT/Pt/Ti/SiO2 multilayers deposited on SOI wafers. The PZT thin films without LNO thin films were degraded through the MEMS micro fabrication process. We have found that the LNO thin films can avoid the degradation. DC actuation of the micro cantilevers using LNO buffered PZT thin films has resulted in symmetric butterfly curve. The transverse piezoelectric constant of LNO buffered PZT thin films (-d31 = 120 pm/V) is higher than that of the PZT thin films without LNO thin films (70 pm/V).","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117269354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393402
P. Mokry, M. Kodejska, T. Sluka
The design and realization of an adaptive vibration isolation system based on a method to control the effective elastic stiffness of piezoelectric materials are presented in this paper. In this system, the vibration isolation effect is achieved by absorption of vibrations transmitted through a multi-stack piezoelectric actuator connected to an active analog circuit that behaves as a negative capacitor. The problem of a high sensitivity of the system to the proper adjustment of the negative capacitor and a deterioration of the vibration isolation efficiency in changing operational conditions are analyzed. A method for the self-adjustment of the system by appending an additional digital control circuit to the negative capacitor is implemented. The transmissibility of vibrations through the piezoelectric actuator was measured in different control regimes.
{"title":"On the vibration control using a piezoelectric actuator and a negative capacitor adjusted by a microprocessor","authors":"P. Mokry, M. Kodejska, T. Sluka","doi":"10.1109/ISAF.2007.4393402","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393402","url":null,"abstract":"The design and realization of an adaptive vibration isolation system based on a method to control the effective elastic stiffness of piezoelectric materials are presented in this paper. In this system, the vibration isolation effect is achieved by absorption of vibrations transmitted through a multi-stack piezoelectric actuator connected to an active analog circuit that behaves as a negative capacitor. The problem of a high sensitivity of the system to the proper adjustment of the negative capacitor and a deterioration of the vibration isolation efficiency in changing operational conditions are analyzed. A method for the self-adjustment of the system by appending an additional digital control circuit to the negative capacitor is implemented. The transmissibility of vibrations through the piezoelectric actuator was measured in different control regimes.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117296243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393421
Jaehyuk Park, J. Akedo
We prepared high transparent metal-ferroelectric nanocomposite thick films by aerosol deposition method (ADM) and report their enhanced surface plasmon resonance (SPR) properties. ADM has been attracting much attention for its ability to deposit complex composite films at a high deposition rate and a low process temperature. Composite metal-dielectric powders are prepared from submicron particles of PZT and nano particles of gold (10-40 nm) with concentrations below 1 wt%. Nanocomposite gold/PZT 3-mum-thick film acquired enhanced SPR at approximately 640 nm as a result of annealing. The SPR position in nanocomposite films deposited by ADM can be precisely controlled by adjusting the dielectric constant of the host matrix by annealing.. Moreover, we succeeded in room-tenperature-deposition of gold/alpha-Al2O3 nanocomposite films with high transparent red color for the first time.
{"title":"Transparent Metal-Ferroelectric nanocomposite thick films prepared by Aerosol Deposition Method","authors":"Jaehyuk Park, J. Akedo","doi":"10.1109/ISAF.2007.4393421","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393421","url":null,"abstract":"We prepared high transparent metal-ferroelectric nanocomposite thick films by aerosol deposition method (ADM) and report their enhanced surface plasmon resonance (SPR) properties. ADM has been attracting much attention for its ability to deposit complex composite films at a high deposition rate and a low process temperature. Composite metal-dielectric powders are prepared from submicron particles of PZT and nano particles of gold (10-40 nm) with concentrations below 1 wt%. Nanocomposite gold/PZT 3-mum-thick film acquired enhanced SPR at approximately 640 nm as a result of annealing. The SPR position in nanocomposite films deposited by ADM can be precisely controlled by adjusting the dielectric constant of the host matrix by annealing.. Moreover, we succeeded in room-tenperature-deposition of gold/alpha-Al2O3 nanocomposite films with high transparent red color for the first time.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115248695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393176
S. Okamura, M. Tanimura, H. Shima, H. Naganuma
The Pb(Zr0.4,Ti0.6)O3 thin-film capacitors with top and bottom Pt electrodes were prepared by chemical solution deposition using the precursor solutions with Pb contents ranging from 104 to 119%. Leakage current densities of the PZT capacitors monotonically decreased with increasing Pb contents. In the Pb110%-PZT capacitor, a conduction mechanism changed from the Schottky emission to the Poole-Frenkel at an electric field of approximately 80 kV/cm at RT while the leakage current was limited only by the Poole-Frenkel in case of less Pb contents. In the Pb110%-PZT capacitor, the Schottky barrier height and a relative permittivity were estimated to be 1.1 eV and 4.8, respectively, and the activation energy of trap sites in the Poole-Frenkel conduction was estimated to be 0.5 eV.
{"title":"Leakage Current Property of Pb(Zr0.4, Ti0.6)O3 Thin-film Capacitors with Highly Rectangular Hysteresis Property","authors":"S. Okamura, M. Tanimura, H. Shima, H. Naganuma","doi":"10.1109/ISAF.2007.4393176","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393176","url":null,"abstract":"The Pb(Zr0.4,Ti0.6)O3 thin-film capacitors with top and bottom Pt electrodes were prepared by chemical solution deposition using the precursor solutions with Pb contents ranging from 104 to 119%. Leakage current densities of the PZT capacitors monotonically decreased with increasing Pb contents. In the Pb110%-PZT capacitor, a conduction mechanism changed from the Schottky emission to the Poole-Frenkel at an electric field of approximately 80 kV/cm at RT while the leakage current was limited only by the Poole-Frenkel in case of less Pb contents. In the Pb110%-PZT capacitor, the Schottky barrier height and a relative permittivity were estimated to be 1.1 eV and 4.8, respectively, and the activation energy of trap sites in the Poole-Frenkel conduction was estimated to be 0.5 eV.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115432155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393328
J. Luo, S.J. Zhang, T. Shrout, W. Hackenberger
Relaxor piezoelectric single crystal, lead magnesium niobate-lead titanate (PMN-PT), has potential to greatly improve both piezoelectric actuator and transducer applications. High-quality PMN-PT single crystals with the diameter over 50 mm have been successfully grown along different crystallographic directions by the Bridgman technique at TRS. As a solid solution system, PMN-PT inevitably exhibits an inhomogeneous composition distribution along the boule in conventional Bridgman growth, which results in the variation of dielectric and piezoelectric properties along the growth direction and limits the useful portion in each crystal boule. Zone melting growth technique has been developed to further increase the composition uniformity in solid solution PMN-PT crystal. By using zone-melting growth technique, PMN-PT crystals with 22-25 mm in diameter and 150 mm long have been grown at TRS. This paper reviews the progress in Bridgman and zone-melting growth of PMN-PT with the emphasis on uniformity improvement. In addition, TRS recently developed new piezoelectric crystals with modified PMN-PT compositions, which have expanded operating temperature ranges to 120degC and coercive field to 5 kV/cm. Since these new materials were grown directly from the melt by the Bridgman technique, commercialization is achievable by applying the well established crystal growth process for PMN-PT.
{"title":"Advances in Manufacturing Relaxor Piezoelectric Single Crystals","authors":"J. Luo, S.J. Zhang, T. Shrout, W. Hackenberger","doi":"10.1109/ISAF.2007.4393328","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393328","url":null,"abstract":"Relaxor piezoelectric single crystal, lead magnesium niobate-lead titanate (PMN-PT), has potential to greatly improve both piezoelectric actuator and transducer applications. High-quality PMN-PT single crystals with the diameter over 50 mm have been successfully grown along different crystallographic directions by the Bridgman technique at TRS. As a solid solution system, PMN-PT inevitably exhibits an inhomogeneous composition distribution along the boule in conventional Bridgman growth, which results in the variation of dielectric and piezoelectric properties along the growth direction and limits the useful portion in each crystal boule. Zone melting growth technique has been developed to further increase the composition uniformity in solid solution PMN-PT crystal. By using zone-melting growth technique, PMN-PT crystals with 22-25 mm in diameter and 150 mm long have been grown at TRS. This paper reviews the progress in Bridgman and zone-melting growth of PMN-PT with the emphasis on uniformity improvement. In addition, TRS recently developed new piezoelectric crystals with modified PMN-PT compositions, which have expanded operating temperature ranges to 120degC and coercive field to 5 kV/cm. Since these new materials were grown directly from the melt by the Bridgman technique, commercialization is achievable by applying the well established crystal growth process for PMN-PT.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115470037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393287
W. Sakamoto, N. Itoh, T. Shimura, T. Yogo
BiFeO3-based ceramics have been fabricated by the solid state reaction. The effect of BaTiO3 content in BiFeO3-BaTiO3 system on the crystal structure, the magnetic properties and the electrical properties were investigated. Perovskite BiFeO3 was stabilized through the formation of solid solution with BaTiO3. Rhombohedrally distorted BiFeO3-BaTiO3 showed weak ferromagnetism. Furthermore, the dielectric properties of resultant ceramics was greatly improved by a small amount of Mn doping.
{"title":"Preparation and Characterization of Perovskite BiFeO3-BaTiO3 Ceramics","authors":"W. Sakamoto, N. Itoh, T. Shimura, T. Yogo","doi":"10.1109/ISAF.2007.4393287","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393287","url":null,"abstract":"BiFeO<sub>3</sub>-based ceramics have been fabricated by the solid state reaction. The effect of BaTiO<sub>3</sub> content in BiFeO<sub>3</sub>-BaTiO<sub>3</sub> system on the crystal structure, the magnetic properties and the electrical properties were investigated. Perovskite BiFeO<sub>3</sub> was stabilized through the formation of solid solution with BaTiO<sub>3</sub>. Rhombohedrally distorted BiFeO<sub>3</sub>-BaTiO<sub>3</sub> showed weak ferromagnetism. Furthermore, the dielectric properties of resultant ceramics was greatly improved by a small amount of Mn doping.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127453665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393348
Sang-ho Lee, J. Yoo, H. Song, Siheung Lee, Kiho Choi
In this study, in order to develop the composition ceramics for low loss multilayer ceramic actuator for ultrasonic nozzle and ultrasonic vibrator applications, Pb(Mn1/3Nb2/3)O3Pb(Ni1/3Nb2/3)O3Pb(Zr1/2Ti1/2)O3 (abbreviated as PMN-PNN-PZT) ceramics were fabricated using Li2CO3, Na2CO3 and ZnO as sintering aids. And then, their piezoelectric and dielectric properties according to the amount of ZnO addition were investigated. The addition of ZnO improved density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant of PMN-PNN-PZT ceramics due to the increase of sinterability and accepter doping effect. Electromechanical coupling factor(kp) and mechanical quality factor(Qm) of PMN-PNN-PZT ceramics increased with ZnO amount up to 0.4 wt% and then decreased. At the sintering temperature of 900degC and 0.4 wt% ZnO addition, density, dielectric constant, electromechanical coupling factor(kp), mechanical quality factor(Qm) and piezoelectric d33 constant showed the optimum value of 7.876 g/cm3, 1299, 0.612, 1151 and 369 pC/N, respectively, for low loss multilayer ceramic actuator application.
{"title":"Effect of ZnO on Low Temperature Sintering of Pb(Mn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(Zr1/2Ti1/2)O3 Ceramics","authors":"Sang-ho Lee, J. Yoo, H. Song, Siheung Lee, Kiho Choi","doi":"10.1109/ISAF.2007.4393348","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393348","url":null,"abstract":"In this study, in order to develop the composition ceramics for low loss multilayer ceramic actuator for ultrasonic nozzle and ultrasonic vibrator applications, Pb(Mn<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>Pb(Ni<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>Pb(Zr<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub> (abbreviated as PMN-PNN-PZT) ceramics were fabricated using Li<sub>2</sub>CO<sub>3</sub>, Na<sub>2</sub>CO<sub>3</sub> and ZnO as sintering aids. And then, their piezoelectric and dielectric properties according to the amount of ZnO addition were investigated. The addition of ZnO improved density, dielectric constant, electromechanical coupling factor, mechanical quality factor and piezoelectric d constant of PMN-PNN-PZT ceramics due to the increase of sinterability and accepter doping effect. Electromechanical coupling factor(kp) and mechanical quality factor(Q<sub>m</sub>) of PMN-PNN-PZT ceramics increased with ZnO amount up to 0.4 wt% and then decreased. At the sintering temperature of 900degC and 0.4 wt% ZnO addition, density, dielectric constant, electromechanical coupling factor(k<sub>p</sub>), mechanical quality factor(Q<sub>m</sub>) and piezoelectric d<sub>33</sub> constant showed the optimum value of 7.876 g/cm<sup>3</sup>, 1299, 0.612, 1151 and 369 pC/N, respectively, for low loss multilayer ceramic actuator application.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125266545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393422
T. Kosaka, D. Fukunaga, K. Uchiyama, T. Shiosaki
Epitaxially grown lanthanum-modified lead zirconate titanate (PLZT) thin films were deposited on r-cut sapphire substrates using a sol-gel method. The new deposition processes of methanol treatments brought high quality epitaxial growth of PLZT thin films. This film showed high electro-optic (EO) coefficients that were almost comparable to those of bulk PLZTs. We believe this advanced deposition technique will open the door for the future data communication systems with integrated electro-optic devices.
{"title":"Epitaxial Growth of PLZT Thin Films and their Electro-Optic Properties","authors":"T. Kosaka, D. Fukunaga, K. Uchiyama, T. Shiosaki","doi":"10.1109/ISAF.2007.4393422","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393422","url":null,"abstract":"Epitaxially grown lanthanum-modified lead zirconate titanate (PLZT) thin films were deposited on r-cut sapphire substrates using a sol-gel method. The new deposition processes of methanol treatments brought high quality epitaxial growth of PLZT thin films. This film showed high electro-optic (EO) coefficients that were almost comparable to those of bulk PLZTs. We believe this advanced deposition technique will open the door for the future data communication systems with integrated electro-optic devices.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126140034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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