Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393198
Hyun Ju Lee, G. Hwang, K. Lee, G. Kim, C. Hwang
Atomic layer deposition of ferroelectric PbTiO3 (PTO) thin films and its component oxide films were attempted using the Pb(DMAMP)2 and Ti(Oi-Pr)4 or Ti(Ot-Bu)4, as the Pb-and Ti-precursors, respectively, and H2O as oxidant at a wafer temperature of 200 on Ir/IrO2/SiO2/Si substrate. The stoichiometric PTO thin films were grown by a proper control of the cycle ratio of the PbO and TiO2 cycles. The increase of the PTO film growth rate due to the cayalytic effect was observed compared to its component oxide films for both processes using Ti(Oi-Pr)4 or Ti(Ot-Bu)4. The as-deposited PTO film was amorphous so that two different post-deposition annealing method, i.e. slow and fast furnace annealing at 600 , were used to crystallize PTO film. The higher growth rate of PTO film grown using Ti(Oi-Pr)4 due to the higher growth rate of TiO2 film compared to the case using Ti(Ot-Bu)4 resulted in less dense PTO film with the higher density of micro-pores inside as well as surface of film after the fast furnace annealing. Slow furnace annealing improved the surface morphology of PTO film and reduced the micro-pore density. Post-deposition annealing transformed amorphous film to polycrystalline film of perovskite sturcure with an a-axis preferred crystallographic orientation.
{"title":"Atomic layer deposition of PbTiO3 and its component oxide films","authors":"Hyun Ju Lee, G. Hwang, K. Lee, G. Kim, C. Hwang","doi":"10.1109/ISAF.2007.4393198","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393198","url":null,"abstract":"Atomic layer deposition of ferroelectric PbTiO<sub>3</sub> (PTO) thin films and its component oxide films were attempted using the Pb(DMAMP)<sub>2</sub> and Ti(Oi-Pr)<sub>4</sub> or Ti(Ot-Bu)<sub>4</sub>, as the Pb-and Ti-precursors, respectively, and H<sub>2</sub>O as oxidant at a wafer temperature of 200 on Ir/IrO<sub>2</sub>/SiO<sub>2</sub>/Si substrate. The stoichiometric PTO thin films were grown by a proper control of the cycle ratio of the PbO and TiO<sub>2</sub> cycles. The increase of the PTO film growth rate due to the cayalytic effect was observed compared to its component oxide films for both processes using Ti(Oi-Pr)<sub>4</sub> or Ti(Ot-Bu)<sub>4</sub>. The as-deposited PTO film was amorphous so that two different post-deposition annealing method, i.e. slow and fast furnace annealing at 600 , were used to crystallize PTO film. The higher growth rate of PTO film grown using Ti(Oi-Pr)<sub>4</sub> due to the higher growth rate of TiO<sub>2</sub> film compared to the case using Ti(Ot-Bu)<sub>4</sub> resulted in less dense PTO film with the higher density of micro-pores inside as well as surface of film after the fast furnace annealing. Slow furnace annealing improved the surface morphology of PTO film and reduced the micro-pore density. Post-deposition annealing transformed amorphous film to polycrystalline film of perovskite sturcure with an a-axis preferred crystallographic orientation.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121995125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393405
K. Kanayama, M. Hasegawa, Y. Tomikawa
This paper describes a new gyro-moment motor which utilizes two phase driving. Driving force is generated by two pairs of piezoelectric ceramic plates. They are attached to a cross-shaped vibrator plate which is made of stainless steel. As a direct torque transmission shaft is not necessary for a gyro-moment motor, it is free from a problem of mechanical friction of bearings. Accordingly, it is expected inherently to use as a high speed and low torque motor. But the former gyro-moment motor dealt with in the reference [1] has not been able to change its rotating direction and to make starting the motor. We here resolved these defects by adopting two-phase driving structure, and obtained following results. The first advantage of this motor is to be able to change its rotating direction, in other words, to rotate in CW or CCW direction. The second is to achieve starting the motor without mechanical triggering.
{"title":"Two-Phase Driving Type Piezoelectric Gyro-Moment Motor","authors":"K. Kanayama, M. Hasegawa, Y. Tomikawa","doi":"10.1109/ISAF.2007.4393405","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393405","url":null,"abstract":"This paper describes a new gyro-moment motor which utilizes two phase driving. Driving force is generated by two pairs of piezoelectric ceramic plates. They are attached to a cross-shaped vibrator plate which is made of stainless steel. As a direct torque transmission shaft is not necessary for a gyro-moment motor, it is free from a problem of mechanical friction of bearings. Accordingly, it is expected inherently to use as a high speed and low torque motor. But the former gyro-moment motor dealt with in the reference [1] has not been able to change its rotating direction and to make starting the motor. We here resolved these defects by adopting two-phase driving structure, and obtained following results. The first advantage of this motor is to be able to change its rotating direction, in other words, to rotate in CW or CCW direction. The second is to achieve starting the motor without mechanical triggering.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126545926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393398
Zhi-Xun Lin, Sean Wu, R. Ro, Maw-Shung Lee
In this research, the (103) oriented AIN films were successfully sputtered on silicon to be a new composite surface acoustic wave (SAW) substrate. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the Full-Width Half-Maximum (FWHM) value of the (103) XRD peak was 0.288deg. The SAW properties of the (103) oriented AIN films on silicon had been theoretically analyzed. The simulation results showed the maximum Rayleigh velocity was about 5626 m/s and the maximum electromechanical coupling constant (K) was about 0.61%. It was found those SAW parameters of the (103)AlN/Si structure surpassed the ones of the (002)AlN/Si structure. The (103) oriented AIN films on silicon is a promising candidate applicable for the design of SAW devices.
{"title":"Sputtering (103) Oriented AlN and its SAW Properties Analysis","authors":"Zhi-Xun Lin, Sean Wu, R. Ro, Maw-Shung Lee","doi":"10.1109/ISAF.2007.4393398","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393398","url":null,"abstract":"In this research, the (103) oriented AIN films were successfully sputtered on silicon to be a new composite surface acoustic wave (SAW) substrate. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the Full-Width Half-Maximum (FWHM) value of the (103) XRD peak was 0.288deg. The SAW properties of the (103) oriented AIN films on silicon had been theoretically analyzed. The simulation results showed the maximum Rayleigh velocity was about 5626 m/s and the maximum electromechanical coupling constant (K) was about 0.61%. It was found those SAW parameters of the (103)AlN/Si structure surpassed the ones of the (002)AlN/Si structure. The (103) oriented AIN films on silicon is a promising candidate applicable for the design of SAW devices.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124123312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393223
T. Iijima, H. Okino, T. Yamamoto
10-mum-thick PZT films were deposited on the Pt/Ti/SiO2/Si substrates, and 20-to 500-mum-diameter PZT thick film disks on the Si substrate were fabricated. the butterfly shape displacement curves of the top side, bottom side and subtraction of bottom side from top side were measured with twin-beam interferometer, and the effect of the disk diameter on these displacements were compared with FEM simulation. the clamping effect is eliminated when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, is less than three, that is dlt < 3, for 10-mum-thick PZT film. therefore, the actual longitudinal displacement of the PZT films can be evaluated for dlt < 3.
{"title":"Longitudinal Displacement Measurement of Lead Zirconate Titanate Thick Films Deposited on Silicon substrates","authors":"T. Iijima, H. Okino, T. Yamamoto","doi":"10.1109/ISAF.2007.4393223","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393223","url":null,"abstract":"10-mum-thick PZT films were deposited on the Pt/Ti/SiO2/Si substrates, and 20-to 500-mum-diameter PZT thick film disks on the Si substrate were fabricated. the butterfly shape displacement curves of the top side, bottom side and subtraction of bottom side from top side were measured with twin-beam interferometer, and the effect of the disk diameter on these displacements were compared with FEM simulation. the clamping effect is eliminated when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, is less than three, that is dlt < 3, for 10-mum-thick PZT film. therefore, the actual longitudinal displacement of the PZT films can be evaluated for dlt < 3.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124501754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393217
K. Barz, M. Diestelhorst, H. Beige, L. Geske, M. Alexe, D. Hesse
The influence of size effects and of the microstructure of interfaces and thin films on the linear properties of ferroelectrics is presently a widely studied topic world-wide. However, their influence on nonlinear properties of nanoscaled ferroelectrics is widely unknown. The paper is devoted to the well-defined preparation of nanoscaled ferroelectrics and to investigations into the influence of size and microstructure effects on their nonlinear properties. Different metal/ferroelectric/metal-(MFM) and metal/ferroelectric/semiconductor-(MFS) heterostructures were prepared. The ferroelectric materials used are PZT and bismuth titanate. The nonlinear dielectric properties where analyzed by inspecting the amplitude-frequency-characteristics of a nonlinear series resonance circuit, which contained the heterostructures as nonlinear capacitance.
{"title":"Nonlinear Dielectric Bahaviour of Metal/Ferroelectric/Metal and Metal/Ferroelectric/Semiconductor-Heterostructures","authors":"K. Barz, M. Diestelhorst, H. Beige, L. Geske, M. Alexe, D. Hesse","doi":"10.1109/ISAF.2007.4393217","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393217","url":null,"abstract":"The influence of size effects and of the microstructure of interfaces and thin films on the linear properties of ferroelectrics is presently a widely studied topic world-wide. However, their influence on nonlinear properties of nanoscaled ferroelectrics is widely unknown. The paper is devoted to the well-defined preparation of nanoscaled ferroelectrics and to investigations into the influence of size and microstructure effects on their nonlinear properties. Different metal/ferroelectric/metal-(MFM) and metal/ferroelectric/semiconductor-(MFS) heterostructures were prepared. The ferroelectric materials used are PZT and bismuth titanate. The nonlinear dielectric properties where analyzed by inspecting the amplitude-frequency-characteristics of a nonlinear series resonance circuit, which contained the heterostructures as nonlinear capacitance.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122658865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393173
F. Calame, P. Muralt
Pb(Zrx,Ti1-x)O3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The usually observed gradient in B-site composition could be reduced from plusmn12 to plusmn2.5 at% amplitude in Zr concentration fluctuations. The obtained 2 mum thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsiv33f was obtained as 1620, and the remanent transverse piezoelectric coefficient e31f-was measured as -17.7 C/m2.
{"title":"Gradient free sol-gel Pb(Zrx, Ti1-x)O3 thin films","authors":"F. Calame, P. Muralt","doi":"10.1109/ISAF.2007.4393173","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393173","url":null,"abstract":"Pb(Zr<sub>x</sub>,Ti<sub>1-x</sub>)O<sub>3</sub> thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiO<sub>x</sub>/SiO<sub>2</sub>/Si substrates. The usually observed gradient in B-site composition could be reduced from plusmn12 to plusmn2.5 at% amplitude in Zr concentration fluctuations. The obtained 2 mum thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsiv<sub>33f</sub> was obtained as 1620, and the remanent transverse piezoelectric coefficient e<sub>31f</sub>-was measured as -17.7 C/m<sup>2</sup>.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125141777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393409
Sidney B. Lang, E. Ringgaard
A modification of a technique for the measurement of the thermal diffusivity of thin solid materials is presented. It is based on the measurement of the phase retardation of a thermal wave passing through the test material by means of a PZT pyroelectric detector. It is not necessary to know either the pyroelectric coefficient of the detector or the intensity of the laser beam. The technique was applied to the study of several sets of Ferroperm Pz27 ceramic samples with porosities of 20, 25 and 30%. One sample set was poled and the pores were partially filled with the fluid using during poling. A second set was not poled. Scanning electron micrographs indicated that the 20 and 25% samples had 0-3 connectivity with a small amount of 3-3 connectivity. The connectivity of the 30% porosity sample was almost completely 3-3. The heat capacity of the Pz27 was determined in order that thermal conductivities could be calculated. The poled porous samples had thermal conductivities intermediate between that of a commercial dense Pz27 sample and those of unpoled materials.
{"title":"A Novel Technique for the Determination of Thermal Diffusivities and Conductivities and its Application to Porous PZT Samples","authors":"Sidney B. Lang, E. Ringgaard","doi":"10.1109/ISAF.2007.4393409","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393409","url":null,"abstract":"A modification of a technique for the measurement of the thermal diffusivity of thin solid materials is presented. It is based on the measurement of the phase retardation of a thermal wave passing through the test material by means of a PZT pyroelectric detector. It is not necessary to know either the pyroelectric coefficient of the detector or the intensity of the laser beam. The technique was applied to the study of several sets of Ferroperm Pz27 ceramic samples with porosities of 20, 25 and 30%. One sample set was poled and the pores were partially filled with the fluid using during poling. A second set was not poled. Scanning electron micrographs indicated that the 20 and 25% samples had 0-3 connectivity with a small amount of 3-3 connectivity. The connectivity of the 30% porosity sample was almost completely 3-3. The heat capacity of the Pz27 was determined in order that thermal conductivities could be calculated. The poled porous samples had thermal conductivities intermediate between that of a commercial dense Pz27 sample and those of unpoled materials.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123542022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393186
C. Leu, Tzong-Dar Wu, F. Hsu
SrBi2Ta2O9 (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO2/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.
{"title":"Properties of MOD-derived SrBi2Ta2O9 thin films crystallized in an electric field","authors":"C. Leu, Tzong-Dar Wu, F. Hsu","doi":"10.1109/ISAF.2007.4393186","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393186","url":null,"abstract":"SrBi2Ta2O9 (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO2/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125656036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393329
W. Chang, L.C. Li, P. Yang, H. Moser, F.-T. Wang, C.-T. Tseng, C. Tu
The phase transformation sequence in as-grown PZN-4.5%PT single crystal has been investigated by means of dielectric permittivity measurements and high-resolution synchrotron x-ray diffraction. The results show that the crystal undergoes the R-T(R)-Mc-C transformation path during zero-field heating from 25degC to 160degC, where R, T, Mc and C are the rhombohedral, tetragonal, Mc-type monoclinic, and cubic phases, respectively. 'T(R)" represents that dominant T domains coexist with smaller fraction of R domains. Our results indicate that both the R-T and R-Mc transformations are first-order, while the T-Mc-C transformation is second-order in nature.
{"title":"Phase Transformation Sequences in As-Grown PZN-4.5%PT Single Crystals","authors":"W. Chang, L.C. Li, P. Yang, H. Moser, F.-T. Wang, C.-T. Tseng, C. Tu","doi":"10.1109/ISAF.2007.4393329","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393329","url":null,"abstract":"The phase transformation sequence in as-grown PZN-4.5%PT single crystal has been investigated by means of dielectric permittivity measurements and high-resolution synchrotron x-ray diffraction. The results show that the crystal undergoes the R-T(R)-Mc-C transformation path during zero-field heating from 25degC to 160degC, where R, T, Mc and C are the rhombohedral, tetragonal, Mc-type monoclinic, and cubic phases, respectively. 'T(R)\" represents that dominant T domains coexist with smaller fraction of R domains. Our results indicate that both the R-T and R-Mc transformations are first-order, while the T-Mc-C transformation is second-order in nature.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125789638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-05-27DOI: 10.1109/ISAF.2007.4393404
J. Yoo, Sang-ho Lee, Jaeil Hong, H. Song, Durkwon Park, Eunsang Hwang
In comparison with conventional electromagnetic motors, ultrasonic motors have many advantages such as a large torque at the low velocity, good controllability, rapid response, quiet operation, simple structure and non electromagnetic field induction, etc. These features have led to the development of various ultrasonic motors in many industrial fields. Hence, in this study, ultrasonic linear motor using multilayer structured ceramic actuator was designed and simulated using ANSYS of finite element method(FEM) simulator for investigating the optimum conditions of it. The ultrasonic linear motor studied in this paper was designed using the 1st longitudinal (L1) and 4th bending (B4) vibration. The size of ceramic actuator is 15 mm long and 5 mm wide. And one-layer thickness of actuator is 60 mu m. The dimension of linear motor is 61 times 5 times 3 mm. The sectional size of projection is 1.5 times 5 mm. The driving voltage of the motor was very low as 5 Vrms. With the increase of the number of piezoelectric ceramic layers, displacement of node was increased up to 21 layered ceramic actuator and then decreased. Maximum z displacement of node was about 7.02 mum at the 21 layered ultrasonic motor.
{"title":"Design and Simulation of Ultrasonic Linear Motor using Multilayer Ceramic Actuator","authors":"J. Yoo, Sang-ho Lee, Jaeil Hong, H. Song, Durkwon Park, Eunsang Hwang","doi":"10.1109/ISAF.2007.4393404","DOIUrl":"https://doi.org/10.1109/ISAF.2007.4393404","url":null,"abstract":"In comparison with conventional electromagnetic motors, ultrasonic motors have many advantages such as a large torque at the low velocity, good controllability, rapid response, quiet operation, simple structure and non electromagnetic field induction, etc. These features have led to the development of various ultrasonic motors in many industrial fields. Hence, in this study, ultrasonic linear motor using multilayer structured ceramic actuator was designed and simulated using ANSYS of finite element method(FEM) simulator for investigating the optimum conditions of it. The ultrasonic linear motor studied in this paper was designed using the 1st longitudinal (L1) and 4th bending (B4) vibration. The size of ceramic actuator is 15 mm long and 5 mm wide. And one-layer thickness of actuator is 60 mu m. The dimension of linear motor is 61 times 5 times 3 mm. The sectional size of projection is 1.5 times 5 mm. The driving voltage of the motor was very low as 5 Vrms. With the increase of the number of piezoelectric ceramic layers, displacement of node was increased up to 21 layered ceramic actuator and then decreased. Maximum z displacement of node was about 7.02 mum at the 21 layered ultrasonic motor.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134024428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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