Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606335
M. Yamaguchi, H. Shigyo, Y. Yamamoto, S. Sudo, S. Ito
All industries have started to conduct research in environmentally safe materials. In the electronics industry also environmental issue is one of the most important concerns being addressed with rapid technical improvement. Flame retardant agents like halogen and antimony oxide are used in plastic molding compounds to provide flame retardant characteristics to all plastic encapsulated packages. However these materials have concerns as they are considered environmental hazards. This paper deals with the study of a new environmentally safe flame retardant system for plastic encapsulants. We studied the application of a new non halogen and non antimony oxide flame retardant system for the molding compound of Ball Grid Arrays (BGA) as the next generation conventional standard package.
{"title":"Non halogen/antimony flame retardant system for high end IC package","authors":"M. Yamaguchi, H. Shigyo, Y. Yamamoto, S. Sudo, S. Ito","doi":"10.1109/ECTC.1997.606335","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606335","url":null,"abstract":"All industries have started to conduct research in environmentally safe materials. In the electronics industry also environmental issue is one of the most important concerns being addressed with rapid technical improvement. Flame retardant agents like halogen and antimony oxide are used in plastic molding compounds to provide flame retardant characteristics to all plastic encapsulated packages. However these materials have concerns as they are considered environmental hazards. This paper deals with the study of a new environmentally safe flame retardant system for plastic encapsulants. We studied the application of a new non halogen and non antimony oxide flame retardant system for the molding compound of Ball Grid Arrays (BGA) as the next generation conventional standard package.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130743371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606145
H. Ota, S. Fujieda, T. Okuyama
This paper describes a new encapsulating method using resin sheets. There are three important points to develop this method. 1. New molding process and encapsulating molds. 2. Resin suitable for this method. 3. Measuring method for resin state. This method is suitable for fabricating thin packages. These thin model packages showed the high reliability of pressure cooker test and thermal cycle test.
{"title":"A new encapsulating method for semiconductor devices using resin sheets","authors":"H. Ota, S. Fujieda, T. Okuyama","doi":"10.1109/ECTC.1997.606145","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606145","url":null,"abstract":"This paper describes a new encapsulating method using resin sheets. There are three important points to develop this method. 1. New molding process and encapsulating molds. 2. Resin suitable for this method. 3. Measuring method for resin state. This method is suitable for fabricating thin packages. These thin model packages showed the high reliability of pressure cooker test and thermal cycle test.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132912771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606151
A. S. Chen, A. Shafi, R. W. Busse, R. Orr, R. Lo
Power integrated circuits (IC) semiconductor devices are sensitive to any sort of process variations, device and package materials effects, and environmental changes and stresses that will affect their ability to withstand the maximum applied voltage during operation. For example, contact between the epoxy molding compound and the die surface can radically alter the electrical performance, especially after environmental stressing. Some of this could be mechanical, caused by thermal mismatch. Other reasons could be chemical interactions between the molding compound and the charges within the device passivation, which would also be greatly influenced by type. Unfortunately, there is a lack of literature available on electronic package effects on high voltage device behavior. In this study, the effect of molding compound on the breakdown voltage stability of a high voltage metal oxide semiconductor-field effect transistor (MOSFET), utilizing the RESURF (Reduced SURFace electric field) technique, was examined. Breakdown stability was tested by High Temperature Reverse Bias (HTRB) testing. Both compound and post-mold cure processes were found to affect the breakdown voltage, however, it also became clear that the compounds were not acting alone and it would be necessary to evaluate the chip passivation as well, and its interaction with the molding compound.
{"title":"Molding compounds for high breakdown voltage applications on power IC semiconductors","authors":"A. S. Chen, A. Shafi, R. W. Busse, R. Orr, R. Lo","doi":"10.1109/ECTC.1997.606151","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606151","url":null,"abstract":"Power integrated circuits (IC) semiconductor devices are sensitive to any sort of process variations, device and package materials effects, and environmental changes and stresses that will affect their ability to withstand the maximum applied voltage during operation. For example, contact between the epoxy molding compound and the die surface can radically alter the electrical performance, especially after environmental stressing. Some of this could be mechanical, caused by thermal mismatch. Other reasons could be chemical interactions between the molding compound and the charges within the device passivation, which would also be greatly influenced by type. Unfortunately, there is a lack of literature available on electronic package effects on high voltage device behavior. In this study, the effect of molding compound on the breakdown voltage stability of a high voltage metal oxide semiconductor-field effect transistor (MOSFET), utilizing the RESURF (Reduced SURFace electric field) technique, was examined. Breakdown stability was tested by High Temperature Reverse Bias (HTRB) testing. Both compound and post-mold cure processes were found to affect the breakdown voltage, however, it also became clear that the compounds were not acting alone and it would be necessary to evaluate the chip passivation as well, and its interaction with the molding compound.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133525347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606195
W. Jiang, P. Claisse, C. Gaw, P. Kiely, B. Lawrence, M. Lebby, M. Roll
We will discuss a discrete VCSEL packaging method using a monitoring photodiode for auto power control. We have demonstrated a VCSEL package with an output power variation within /spl plusmn/1% over a temperature range from 0 to 65/spl deg/C.
{"title":"Vertical cavity surface emitting laser packaging with auto power control","authors":"W. Jiang, P. Claisse, C. Gaw, P. Kiely, B. Lawrence, M. Lebby, M. Roll","doi":"10.1109/ECTC.1997.606195","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606195","url":null,"abstract":"We will discuss a discrete VCSEL packaging method using a monitoring photodiode for auto power control. We have demonstrated a VCSEL package with an output power variation within /spl plusmn/1% over a temperature range from 0 to 65/spl deg/C.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132189854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606257
D. Cohen, L. Coldren
We demonstrate that temperature-dependent strain may be used to stabilize the wavelength, threshold current, and differential efficiency, of a 1.55 /spl mu/m multiquantum well diode laser mounted on a bimetallic heatsink. We have obtained nearly complete stabilization of the modal wavelength, and an equivalent threshold current characteristic temperature of 133 K, over the temperature range of 20-70/spl deg/C. We describe the principles of temperature compensation using thermal stress, review our results, and discuss the problems that remain to be solved.
{"title":"Bimetallic heatsinks for temperature compensation of diode lasers: prospects for microfabrication","authors":"D. Cohen, L. Coldren","doi":"10.1109/ECTC.1997.606257","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606257","url":null,"abstract":"We demonstrate that temperature-dependent strain may be used to stabilize the wavelength, threshold current, and differential efficiency, of a 1.55 /spl mu/m multiquantum well diode laser mounted on a bimetallic heatsink. We have obtained nearly complete stabilization of the modal wavelength, and an equivalent threshold current characteristic temperature of 133 K, over the temperature range of 20-70/spl deg/C. We describe the principles of temperature compensation using thermal stress, review our results, and discuss the problems that remain to be solved.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124207195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606174
R. Nagarajan, W. Sha, B. Li, P. Braid, Robert J. Furmanak, J. Marchegiano, B. Booth
We present a 10 channel parallel fiber optic link consisting of a transmitter based on an edge emitting laser diode array operating at 980 nm and a complementary receiver based on an InGaAs pin photodetector array. We demonstrate link performance up to data rates of 1 Gbit/s with measurement time limited bit errors rates lower than 10/sup -11/ over 100 m of multi-mode fiber ribbon cable.
{"title":"Gigabit parallel fiber optic link based on edge emitting lasers","authors":"R. Nagarajan, W. Sha, B. Li, P. Braid, Robert J. Furmanak, J. Marchegiano, B. Booth","doi":"10.1109/ECTC.1997.606174","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606174","url":null,"abstract":"We present a 10 channel parallel fiber optic link consisting of a transmitter based on an edge emitting laser diode array operating at 980 nm and a complementary receiver based on an InGaAs pin photodetector array. We demonstrate link performance up to data rates of 1 Gbit/s with measurement time limited bit errors rates lower than 10/sup -11/ over 100 m of multi-mode fiber ribbon cable.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114489986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606150
N. Tanaka, M. Kitano, T. Kumazawa, A. Nishimura
Adhesion strength evaluation of molding compounds is a critical issue in both structural design and material selection of plastic IC packages. We previously proposed a new adhesion test method that can separate residual stress from adhesion strength, and we confirmed that the measured true adhesion strength can be applied to the quantitative prediction of interface delamination in a dry package. This paper describes the influence of moisture absorbing conditions on true adhesion strength determined by this method. The drop of true adhesion strength of a specimen that has absorbed moisture at 50/spl deg/C is about 40 percent of that of a specimen at 85/spl deg/C. This suggests that the general moisture condition (85/spl deg/C/85%) accelerates the damage to plastic IC packages when compared to the case of moisture absorption at room temperature. We also evaluated interface delamination in a moisture-absorbed package by considering the swelling of the molding compound due to moisture absorption. The predicted results agree well with the experimental data for moisture-absorbed packages.
{"title":"Evaluation of interface delamination in IC packages by considering swelling of the molding compound due to moisture absorption","authors":"N. Tanaka, M. Kitano, T. Kumazawa, A. Nishimura","doi":"10.1109/ECTC.1997.606150","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606150","url":null,"abstract":"Adhesion strength evaluation of molding compounds is a critical issue in both structural design and material selection of plastic IC packages. We previously proposed a new adhesion test method that can separate residual stress from adhesion strength, and we confirmed that the measured true adhesion strength can be applied to the quantitative prediction of interface delamination in a dry package. This paper describes the influence of moisture absorbing conditions on true adhesion strength determined by this method. The drop of true adhesion strength of a specimen that has absorbed moisture at 50/spl deg/C is about 40 percent of that of a specimen at 85/spl deg/C. This suggests that the general moisture condition (85/spl deg/C/85%) accelerates the damage to plastic IC packages when compared to the case of moisture absorption at room temperature. We also evaluated interface delamination in a moisture-absorbed package by considering the swelling of the molding compound due to moisture absorption. The predicted results agree well with the experimental data for moisture-absorbed packages.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114814541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606259
S. Weiss, V. Bader, G. Azdasht, P. Kasulke, E. Zakel, H. Reichl
This paper presents a new concept for a fluxless package design for commercial high power laser bars. The laser bars are soldered on CuW heatsinks using Au(80)Sn(20) solder. Then a Cu lead is bonded with the FPC method (Fiber-Push-Connection) as a cap and electrical contact. Finally, the heatsink is mounted on a Cu microchannel cooler with Pb(37)Sn(63). We describe the mounting processes in detail, showing the large bonding window for soldering with Au(80)Sn(20), which is necessary for industrial production. The metallurgy of the Au(80)Sn(20) bonding interface is not dependent on the bond parameters in the area of the bonding window. Electro-optical characterizations show excellent performance of the laser bars. An accelerated aging test gives a first indicator of the high reliability of this package concept.
{"title":"Fluxless die bonding of high power laser bars using the AuSn-metallurgy","authors":"S. Weiss, V. Bader, G. Azdasht, P. Kasulke, E. Zakel, H. Reichl","doi":"10.1109/ECTC.1997.606259","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606259","url":null,"abstract":"This paper presents a new concept for a fluxless package design for commercial high power laser bars. The laser bars are soldered on CuW heatsinks using Au(80)Sn(20) solder. Then a Cu lead is bonded with the FPC method (Fiber-Push-Connection) as a cap and electrical contact. Finally, the heatsink is mounted on a Cu microchannel cooler with Pb(37)Sn(63). We describe the mounting processes in detail, showing the large bonding window for soldering with Au(80)Sn(20), which is necessary for industrial production. The metallurgy of the Au(80)Sn(20) bonding interface is not dependent on the bond parameters in the area of the bonding window. Electro-optical characterizations show excellent performance of the laser bars. An accelerated aging test gives a first indicator of the high reliability of this package concept.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116408068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606208
J. Zhu, D. Zou, S. Liu
In this study, moire interferometry and experimental/FEM hybrid method were applied in the thermal deformation analysis of several area array packages. High frequency gratings of 1200 l/mm and 600 l/mm were replicated onto the cross sections of packages at the elevated temperature of 80/spl deg/C or 160/spl deg/C. These packages include an OMPAC BGA and a flip-chip BGA. The thermal deformation of these packages were measured by moire interferometry. Warpage of the packaging systems was measured and the effects of the bonding, encapsulation, soldering, and geometry on the deformation were discussed. The strain distributions inside the solder joints were analyzed by both moire interferometry and experimental/FEM hybrid method.
{"title":"High temperature deformation of area array packages by moire interferometry/FEM hybrid method","authors":"J. Zhu, D. Zou, S. Liu","doi":"10.1109/ECTC.1997.606208","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606208","url":null,"abstract":"In this study, moire interferometry and experimental/FEM hybrid method were applied in the thermal deformation analysis of several area array packages. High frequency gratings of 1200 l/mm and 600 l/mm were replicated onto the cross sections of packages at the elevated temperature of 80/spl deg/C or 160/spl deg/C. These packages include an OMPAC BGA and a flip-chip BGA. The thermal deformation of these packages were measured by moire interferometry. Warpage of the packaging systems was measured and the effects of the bonding, encapsulation, soldering, and geometry on the deformation were discussed. The strain distributions inside the solder joints were analyzed by both moire interferometry and experimental/FEM hybrid method.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117223411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-05-18DOI: 10.1109/ECTC.1997.606299
R. L. Shook, V. Sastry
The purpose of this work was to determine the influence of preheat and maximum solder reflow temperature on the level of moisture induced damage in plastic surface mount integrated circuits. Both an analytical moisture diffusion model and Finite Element Modeling were applied to the analysis of absorption/desorption behavior of plastic molding compounds. The models were used to analyze the moisture ingress kinetics during controlled environmental exposures and for the prediction of moisture desorption characteristics during solder reflow conditions. Moisture/reflow experiments were conducted on an 80-pin PQFP, 225-pin PBGAs, and two TSOPs (a 56-pin and a 40-pin). Devices were evaluated using C-mode Scanning Acoustic Microscopy. Effects of maximum reflow temperature on measured damage response were determined showing that as a rule the JEDEC/IPC moisture resistance drops by one level for every 20/spl deg/C increase in maximum reflow temperature. The overall benefit of extended preheat is shown to be beneficial for only thin packages that are not saturated. Details of the method used for predicting the beneficial effects of preheating are described.
{"title":"Influence of preheat and maximum temperature of the solder-reflow profile on moisture sensitive IC's","authors":"R. L. Shook, V. Sastry","doi":"10.1109/ECTC.1997.606299","DOIUrl":"https://doi.org/10.1109/ECTC.1997.606299","url":null,"abstract":"The purpose of this work was to determine the influence of preheat and maximum solder reflow temperature on the level of moisture induced damage in plastic surface mount integrated circuits. Both an analytical moisture diffusion model and Finite Element Modeling were applied to the analysis of absorption/desorption behavior of plastic molding compounds. The models were used to analyze the moisture ingress kinetics during controlled environmental exposures and for the prediction of moisture desorption characteristics during solder reflow conditions. Moisture/reflow experiments were conducted on an 80-pin PQFP, 225-pin PBGAs, and two TSOPs (a 56-pin and a 40-pin). Devices were evaluated using C-mode Scanning Acoustic Microscopy. Effects of maximum reflow temperature on measured damage response were determined showing that as a rule the JEDEC/IPC moisture resistance drops by one level for every 20/spl deg/C increase in maximum reflow temperature. The overall benefit of extended preheat is shown to be beneficial for only thin packages that are not saturated. Details of the method used for predicting the beneficial effects of preheating are described.","PeriodicalId":339633,"journal":{"name":"1997 Proceedings 47th Electronic Components and Technology Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124800555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：