1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619237
R. F. Davis, C. Balkas, M. Bremser, O. Nam, W. G. Perry, I. Shmagin, Z. Sitar, B. L. Ward, T. Zheleva, R. Kolbas, R. Nemanich
Summary form only given. Single crystals of AlN to 1 mm thickness were grown at 1950-2250/spl deg/C on 10/spl times/10 mm/sup 2/ 6H-SiC substrates via sublimation-re-condensation. Most crystals were 0.3 mm-1 mm thick transparent layers completely covering the substrates. Raman, optical and TEM results will be presented. Single crystals of GaN were grown by subliming powders of this material under NH/sub 3/. Raman and photoluminescence results will be shown.
{"title":"Growth and characterization of bulk crystals, thin films and patterned structures of AlN, GaN and Al/sub x/Ga/sub 1-x/N on SiC(0001) substrates and device-related research","authors":"R. F. Davis, C. Balkas, M. Bremser, O. Nam, W. G. Perry, I. Shmagin, Z. Sitar, B. L. Ward, T. Zheleva, R. Kolbas, R. Nemanich","doi":"10.1109/LEOSST.1997.619237","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619237","url":null,"abstract":"Summary form only given. Single crystals of AlN to 1 mm thickness were grown at 1950-2250/spl deg/C on 10/spl times/10 mm/sup 2/ 6H-SiC substrates via sublimation-re-condensation. Most crystals were 0.3 mm-1 mm thick transparent layers completely covering the substrates. Raman, optical and TEM results will be presented. Single crystals of GaN were grown by subliming powders of this material under NH/sub 3/. Raman and photoluminescence results will be shown.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114485419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619140
S. Chandrasekhar
The late 1990s have seen the rapid progress of optical communication systems employing wavelength division multiplexing (WDM) architectures in order to exploit the enormous bandwidth offered by the optical fiber. There has been concurrent activities in the photonic component arena to find viable solutions for realizing such WDM architectures requiring multichannel transmitters and receivers. One such area where research has been focused is in array technologies. Monolithic integration has progressed sufficiently that arrays of lasers and photodetectors are being envisioned as key device components which enable novel architectures. In particular, optoelectronic integrated circuit (OEIC) photoreceiver arrays have been actively researched worldwide for such applications. Arrays of p-i-n photodetectors have been monolithically integrated with a variety of field effect transistors (FETs) and heterojunction bipolar transistors (HBTs).
{"title":"Monolithic array photoreceivers for multichannel WDM application","authors":"S. Chandrasekhar","doi":"10.1109/LEOSST.1997.619140","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619140","url":null,"abstract":"The late 1990s have seen the rapid progress of optical communication systems employing wavelength division multiplexing (WDM) architectures in order to exploit the enormous bandwidth offered by the optical fiber. There has been concurrent activities in the photonic component arena to find viable solutions for realizing such WDM architectures requiring multichannel transmitters and receivers. One such area where research has been focused is in array technologies. Monolithic integration has progressed sufficiently that arrays of lasers and photodetectors are being envisioned as key device components which enable novel architectures. In particular, optoelectronic integrated circuit (OEIC) photoreceiver arrays have been actively researched worldwide for such applications. Arrays of p-i-n photodetectors have been monolithically integrated with a variety of field effect transistors (FETs) and heterojunction bipolar transistors (HBTs).","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"19 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120839840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619243
G.M. Smith, J. Redwing, J. Flynn, V. M. Phanse, R. Vaudo
Solar-blind UV photodetectors have a number of applications including missile detection, flame sensing, and solar UV monitoring. The III-V nitrides are ideal for these applications due to their wide bandgaps, making detectors transparent to visible and infrared radiation. There have been several publications on photoconductive GaN detectors on sapphire substrates but the effects of defect density on device performance have not been investigated. In this paper we describe the operation of GaN detectors grown by MOCVD on sapphire, SiC, and thick HVPE GaN base layers and compare the device performance of the detectors on each of these substrates.
{"title":"Substrate effects on GaN photodetector performance","authors":"G.M. Smith, J. Redwing, J. Flynn, V. M. Phanse, R. Vaudo","doi":"10.1109/LEOSST.1997.619243","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619243","url":null,"abstract":"Solar-blind UV photodetectors have a number of applications including missile detection, flame sensing, and solar UV monitoring. The III-V nitrides are ideal for these applications due to their wide bandgaps, making detectors transparent to visible and infrared radiation. There have been several publications on photoconductive GaN detectors on sapphire substrates but the effects of defect density on device performance have not been investigated. In this paper we describe the operation of GaN detectors grown by MOCVD on sapphire, SiC, and thick HVPE GaN base layers and compare the device performance of the detectors on each of these substrates.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122345164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619261
J. C. Burton, S. Cohen, S. J. Lukacs, F. H. Long, S. Liang, Y. Lu, Y. Li, C. Tran
For the development of improved devices, the control and understanding of the electrical properties of nitride semiconductors is essential. Although significant progress has been made in recent years, the p-type doping of nitride semiconductors has proven to be challenging. It has been found necessary to anneal the sample after growth at moderate (700/spl deg/C-900/spl deg/C) temperatures in order to electrically activate the dopants. In order to help in the development of improved p-type doped GaN and other group III-nitrides, we have undertaken a study of the Raman spectroscopy of p-type doped GaN under a variety of processing conditions.
{"title":"Raman spectroscopy of Mg-doped gallium nitride: shift of the A/sub 1/(LO) phonon","authors":"J. C. Burton, S. Cohen, S. J. Lukacs, F. H. Long, S. Liang, Y. Lu, Y. Li, C. Tran","doi":"10.1109/LEOSST.1997.619261","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619261","url":null,"abstract":"For the development of improved devices, the control and understanding of the electrical properties of nitride semiconductors is essential. Although significant progress has been made in recent years, the p-type doping of nitride semiconductors has proven to be challenging. It has been found necessary to anneal the sample after growth at moderate (700/spl deg/C-900/spl deg/C) temperatures in order to electrically activate the dopants. In order to help in the development of improved p-type doped GaN and other group III-nitrides, we have undertaken a study of the Raman spectroscopy of p-type doped GaN under a variety of processing conditions.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116826381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619185
C. Lam, E. Yablonovitch
The ability to select an arbitrary wavelength out of a large set of wavelengths is important for future dense wavelength division multiple access (DWDM) systems. Current approaches use a spectrometer to demultiplex the wavelengths and use a switch at each wavelength to select or deselect that particular wavelength at the output. In a DWDM system with N wavelengths, N number of switches at each receiver need to be employed in order to select an arbitrary wavelength using the conventional approach. Since switches are active components, this is undesirable when N is large. A better scaling can be achieved if we can arrange a series of configurable filters in a way that half of the spectral energy is filtered out when the input spectrum is passed through each successive stage of the filter. So the first stage filters out half of the spectrum. The second stage filters out another half of the spectrum that is left from the output of the first stage, etc. Optical filters are usually interferometric devices which generate periodic complementary outputs at the same time, such as a Mach-Zehnder interferometer (MZI). The filters used at different stages could be MZIs for which the periodicity is controlled by varying the optical path differences between the two arms of the MZI. To generate more square like transmission functions, a periodic cavity structure in a form similar to a one-dimensional photonic crystal may be used.
{"title":"A configurable wavelength demultiplexer using periodic filter chains","authors":"C. Lam, E. Yablonovitch","doi":"10.1109/LEOSST.1997.619185","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619185","url":null,"abstract":"The ability to select an arbitrary wavelength out of a large set of wavelengths is important for future dense wavelength division multiple access (DWDM) systems. Current approaches use a spectrometer to demultiplex the wavelengths and use a switch at each wavelength to select or deselect that particular wavelength at the output. In a DWDM system with N wavelengths, N number of switches at each receiver need to be employed in order to select an arbitrary wavelength using the conventional approach. Since switches are active components, this is undesirable when N is large. A better scaling can be achieved if we can arrange a series of configurable filters in a way that half of the spectral energy is filtered out when the input spectrum is passed through each successive stage of the filter. So the first stage filters out half of the spectrum. The second stage filters out another half of the spectrum that is left from the output of the first stage, etc. Optical filters are usually interferometric devices which generate periodic complementary outputs at the same time, such as a Mach-Zehnder interferometer (MZI). The filters used at different stages could be MZIs for which the periodicity is controlled by varying the optical path differences between the two arms of the MZI. To generate more square like transmission functions, a periodic cavity structure in a form similar to a one-dimensional photonic crystal may be used.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126028320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619196
Chen Ji, J. Ballantyne
Summary form only given. Semiconductor ring lasers in unidirectional operation set up a traveling wave inside the cavity, thus avoiding the standing wave spatial hole burning effects relevant in DFB and Fabry-Perot lasers. This results in high spectral purity and hence lowering intensity noise by reducing the mode partition noise. Among the triangular square and circular ring lasers reported, the first mentioned geometry is attractive because of its inherent output coupler and demonstrated power efficiency. We report record low threshold current and large side mode suppression ratio (SMSR) for long wavelength triangular ring InGaAsP QW lasers.
{"title":"Long wavelength triangular shaped waveguide diode ring laser with dry etched facets","authors":"Chen Ji, J. Ballantyne","doi":"10.1109/LEOSST.1997.619196","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619196","url":null,"abstract":"Summary form only given. Semiconductor ring lasers in unidirectional operation set up a traveling wave inside the cavity, thus avoiding the standing wave spatial hole burning effects relevant in DFB and Fabry-Perot lasers. This results in high spectral purity and hence lowering intensity noise by reducing the mode partition noise. Among the triangular square and circular ring lasers reported, the first mentioned geometry is attractive because of its inherent output coupler and demonstrated power efficiency. We report record low threshold current and large side mode suppression ratio (SMSR) for long wavelength triangular ring InGaAsP QW lasers.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125680456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619106
M.Y. Li, W. Yuen, G.S. Li, C. Chang-Hasnain
In conclusion, we report the first high performance, micromechanical tunable top-emitting AlGaAs DBR VCSEL laser that continuously tunes over 20 nm, has threshold current between 0.76 mA-1.9 mA and output power 0.92 mW-1.9 mW throughout the entire tuning range. Such a top-emitting tunable structure is highly desirable for easy optical and electrical packaging and for integration with other devices. The achieved high performance of low threshold and high power renders its practical implementation extremely feasible.
{"title":"A high performance continuously tunable top-emitting VCSEL","authors":"M.Y. Li, W. Yuen, G.S. Li, C. Chang-Hasnain","doi":"10.1109/LEOSST.1997.619106","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619106","url":null,"abstract":"In conclusion, we report the first high performance, micromechanical tunable top-emitting AlGaAs DBR VCSEL laser that continuously tunes over 20 nm, has threshold current between 0.76 mA-1.9 mA and output power 0.92 mW-1.9 mW throughout the entire tuning range. Such a top-emitting tunable structure is highly desirable for easy optical and electrical packaging and for integration with other devices. The achieved high performance of low threshold and high power renders its practical implementation extremely feasible.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127073933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619087
K. Goto
We have already developed a lensless optical floppy disk system. In this paper an ultra high density optical memory disk system of T bits/inch/sup 2/ with G bits/s data transfer rate is newly proposed using near field optics, of which tracks are electric controlled. The optical heads in this system use 100/spl times/100 microcavity VCSEL arrays. One track width on the disk is 20 nm which is fine controlled by an electrical method using a 150/spl times/150 photo-diode array and the whole head is controlled by a conventional optical and electric-mechanical method in seeking tracks.
{"title":"Tera bytes optical disk with electric tracking control using micro-cavity VCSEL array and PD array","authors":"K. Goto","doi":"10.1109/LEOSST.1997.619087","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619087","url":null,"abstract":"We have already developed a lensless optical floppy disk system. In this paper an ultra high density optical memory disk system of T bits/inch/sup 2/ with G bits/s data transfer rate is newly proposed using near field optics, of which tracks are electric controlled. The optical heads in this system use 100/spl times/100 microcavity VCSEL arrays. One track width on the disk is 20 nm which is fine controlled by an electrical method using a 150/spl times/150 photo-diode array and the whole head is controlled by a conventional optical and electric-mechanical method in seeking tracks.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126627433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619112
T. Oh, D. Huffaker, M. MacDaniel, D. Deppe
In summary, we present a device design that incorporates to our knowledge the first cavity induced antiguiding on the lasing mode. Compared to other oxide confined InGaAs DBR QW VCSELs of this size, the antiguided device shows a large area stable near-field of 10 /spl mu/m diameter. We expect that once the resistance is reduced, the structure will show lowest order mode operation over a wide dynamic range.
{"title":"Single-mode vertical-cavity surface-emitting laser with cavity induced antiguiding","authors":"T. Oh, D. Huffaker, M. MacDaniel, D. Deppe","doi":"10.1109/LEOSST.1997.619112","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619112","url":null,"abstract":"In summary, we present a device design that incorporates to our knowledge the first cavity induced antiguiding on the lasing mode. Compared to other oxide confined InGaAs DBR QW VCSELs of this size, the antiguided device shows a large area stable near-field of 10 /spl mu/m diameter. We expect that once the resistance is reduced, the structure will show lowest order mode operation over a wide dynamic range.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126766356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619207
J. R. Meyer, C. L. Felix, I. Vurgaftman, C. Lin, B.H. Yang, R.Q. Yang, S. Pei
Summary form only given. Since mid-IR (3-5 /spl mu/m) lasers tend to be bulky, inefficient, and complex at present, compact, reliable semiconductor sources will find wide use once their levels of performance become adequate. However, our modeling projects that this objective should be achievable using novel type-II quantum well lasers (T2QWLs) and type-II interband cascade lasers (T2ICLs). Here we report simulation results, along with promising preliminary experimental data.
{"title":"Type II quantum well and interband cascade lasers for the mid-IR","authors":"J. R. Meyer, C. L. Felix, I. Vurgaftman, C. Lin, B.H. Yang, R.Q. Yang, S. Pei","doi":"10.1109/LEOSST.1997.619207","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619207","url":null,"abstract":"Summary form only given. Since mid-IR (3-5 /spl mu/m) lasers tend to be bulky, inefficient, and complex at present, compact, reliable semiconductor sources will find wide use once their levels of performance become adequate. However, our modeling projects that this objective should be achievable using novel type-II quantum well lasers (T2QWLs) and type-II interband cascade lasers (T2ICLs). Here we report simulation results, along with promising preliminary experimental data.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121712366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：