Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706496
N. Kamarozaman, M. A. R. Md Rashid, M. Musa, S. H. Herman, R. A. Bakar, W. Abdullah, M. Rusop
The paper presents the memristive behavior of spin-coated titania thin films. The spin speed during the deposition was varied and their effect on the film thickness and thus, to the memristive behavior was studied. Sample deposited at 5000 rpm produced thinner film thickness which result in better switching behavior. The sample showed larger OFF to ON resistance ratio of 5. All samples were measured 3 times for each positive and negative bias. It was found that the memristive behavior was repeatable for 2nd and 3rd measurement. The crystallinity of the films was characterized using Raman spectroscopy. In our work, it was observed that the film thickness mainly affects the switching behavior of memristive device instead of the crystallinity of the films.
{"title":"Effect of film thickness on the memristive behavior of spin coated titanium dioxide thin films","authors":"N. Kamarozaman, M. A. R. Md Rashid, M. Musa, S. H. Herman, R. A. Bakar, W. Abdullah, M. Rusop","doi":"10.1109/RSM.2013.6706496","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706496","url":null,"abstract":"The paper presents the memristive behavior of spin-coated titania thin films. The spin speed during the deposition was varied and their effect on the film thickness and thus, to the memristive behavior was studied. Sample deposited at 5000 rpm produced thinner film thickness which result in better switching behavior. The sample showed larger OFF to ON resistance ratio of 5. All samples were measured 3 times for each positive and negative bias. It was found that the memristive behavior was repeatable for 2nd and 3rd measurement. The crystallinity of the films was characterized using Raman spectroscopy. In our work, it was observed that the film thickness mainly affects the switching behavior of memristive device instead of the crystallinity of the films.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116946703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706527
Ratih Retno Palupi, A. Syahriar, A. Lubis, S. Rahardjo, Sardjono
Optical device based on Mach Zehnder Interferometer (MZI) is usually used as the optical switching, modulator and many applications in telecommunication networks. This paper discuss the Temperature Effect of Wavelength Division Multiplexing (WDM) Interleaver by using single and cascaded MZI. The Sellmeier equation is used to calculate the refractive index changing caused by the temperature changing. The output power of MZI is obtained by using matrix equation. The characteristic of output power varied with several temperatures between 28 and 300 degree Celsius. The wavelength used in this simulation is in L-Band region which is about 1570-1610nm. Temperature changing cause the changing of refractive index of material. The temperature changing leads to the shifting of wavelength channel which describe the characteristic of thermo optic effect on single and cascaded MZI.
{"title":"Simulation of Mach Zehnder Interleaver based thermo-optic effect in L-Band range","authors":"Ratih Retno Palupi, A. Syahriar, A. Lubis, S. Rahardjo, Sardjono","doi":"10.1109/RSM.2013.6706527","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706527","url":null,"abstract":"Optical device based on Mach Zehnder Interferometer (MZI) is usually used as the optical switching, modulator and many applications in telecommunication networks. This paper discuss the Temperature Effect of Wavelength Division Multiplexing (WDM) Interleaver by using single and cascaded MZI. The Sellmeier equation is used to calculate the refractive index changing caused by the temperature changing. The output power of MZI is obtained by using matrix equation. The characteristic of output power varied with several temperatures between 28 and 300 degree Celsius. The wavelength used in this simulation is in L-Band region which is about 1570-1610nm. Temperature changing cause the changing of refractive index of material. The temperature changing leads to the shifting of wavelength channel which describe the characteristic of thermo optic effect on single and cascaded MZI.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121955701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706550
Z. Mahmud, S. H. Herman, U. Noor, S. Saharudin
We present the effect of the catalyst for sol-solution preparation of tris (4,7-diphenyl-1,10-phenanthroline) ruthenium(II) dichloride on the fluorescence quenching behavior. Two types of [Ru(dpp)3]2+ sol-solution were prepared with two types of catalyst namely acid hydrochloric (HCl) and ammonium hydroxide (NH4OH) and each of them was mixed with the dye-solution to form [Ru(dpp)3]2+ sol-gel solution. A polymer optical fiber tip was then coated by each of the solutions respectively by immersion method. A LED source at 460 nm was used as the excitation source and fluorescence emissions intensity was measured using a UV/VIS spectrometer. The results showed that the fiber optic coated with the solution using NH4OH gave higher fluorescence intensity.
{"title":"Effect of catalyst on the fluorescence quenching of [Tris (4, 7-diphenyl-1, 10-phenanthroline) ruthenium (II) dichloride] for dissolved oxygen detection","authors":"Z. Mahmud, S. H. Herman, U. Noor, S. Saharudin","doi":"10.1109/RSM.2013.6706550","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706550","url":null,"abstract":"We present the effect of the catalyst for sol-solution preparation of tris (4,7-diphenyl-1,10-phenanthroline) ruthenium(II) dichloride on the fluorescence quenching behavior. Two types of [Ru(dpp)3]2+ sol-solution were prepared with two types of catalyst namely acid hydrochloric (HCl) and ammonium hydroxide (NH4OH) and each of them was mixed with the dye-solution to form [Ru(dpp)3]2+ sol-gel solution. A polymer optical fiber tip was then coated by each of the solutions respectively by immersion method. A LED source at 460 nm was used as the excitation source and fluorescence emissions intensity was measured using a UV/VIS spectrometer. The results showed that the fiber optic coated with the solution using NH4OH gave higher fluorescence intensity.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134179913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706544
I. Saad, H. M. Zuhir, C. Bun Seng, D. Pogaku, A. R. A. Bakar, A. M. Khairul, B. Ghosh, N. Bolong, R. Ismail, U. Hashim
The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. There are significant drop in subthreshold slope (S) while threshold voltage is increase as the body doping concentration increases. It is notable that for body doping concentration above 1020, the S values keep increasing which is not recommended as the switching speed getting higher distracting performance of the device. An improved stability of threshold voltage, VTH was found for VESIMOS-DP device of various DP size ranging from 20nm to 80nm. The stability is due to the reducing charge sharing effects between source and drain region. In addition, the output characteristic was also highlighted a very good drain current at different gate voltage with the increasing of drain voltage for VESIMOS-DP with high body doping concentration. VESIMOS-DP with low body doping concentration suffers PBT effect that prevents the device from being able to switch off. Hence, high body doping concentrations are imperative for obtaining better device characteristics and ensure the device works in II mode.
{"title":"Body doping analysis of vertical strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)","authors":"I. Saad, H. M. Zuhir, C. Bun Seng, D. Pogaku, A. R. A. Bakar, A. M. Khairul, B. Ghosh, N. Bolong, R. Ismail, U. Hashim","doi":"10.1109/RSM.2013.6706544","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706544","url":null,"abstract":"The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. There are significant drop in subthreshold slope (S) while threshold voltage is increase as the body doping concentration increases. It is notable that for body doping concentration above 1020, the S values keep increasing which is not recommended as the switching speed getting higher distracting performance of the device. An improved stability of threshold voltage, VTH was found for VESIMOS-DP device of various DP size ranging from 20nm to 80nm. The stability is due to the reducing charge sharing effects between source and drain region. In addition, the output characteristic was also highlighted a very good drain current at different gate voltage with the increasing of drain voltage for VESIMOS-DP with high body doping concentration. VESIMOS-DP with low body doping concentration suffers PBT effect that prevents the device from being able to switch off. Hence, high body doping concentrations are imperative for obtaining better device characteristics and ensure the device works in II mode.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114208027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706526
Nurul Hafizah A. Rahman, A. Manut, S. S. Shariffudin, A. B. Rosli, M. Hannas, M. Rusop
Electroluminescence behavior of Poly [2-methoxy-5-(2-ethylhexyloxy) -1,4-phenylenevinylene] (MEH-PPV) as the emissive layer has been investigated in organic light emitting diode (OLED). The typical structure of polymer light emitting diode (PLED) is gold (Au) / MEH-PPV / ITO (Indium Tin Oxide). In this study, we investigated the EL behavior of single layer MEH-PPV at various applied voltages from 1 V to 5 V. The absorbance of MEH-PPV thin film and the EL spectra from 400 nm to 800 nm wavelength of the MEH-PPV device were discussed. The turn-on voltage is almost 1 V and the result showed that higher intensity with 5 V turn-on voltages.
{"title":"Electroluminescence behavior of MEH-PPV based organic light emitting diode","authors":"Nurul Hafizah A. Rahman, A. Manut, S. S. Shariffudin, A. B. Rosli, M. Hannas, M. Rusop","doi":"10.1109/RSM.2013.6706526","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706526","url":null,"abstract":"Electroluminescence behavior of Poly [2-methoxy-5-(2-ethylhexyloxy) -1,4-phenylenevinylene] (MEH-PPV) as the emissive layer has been investigated in organic light emitting diode (OLED). The typical structure of polymer light emitting diode (PLED) is gold (Au) / MEH-PPV / ITO (Indium Tin Oxide). In this study, we investigated the EL behavior of single layer MEH-PPV at various applied voltages from 1 V to 5 V. The absorbance of MEH-PPV thin film and the EL spectra from 400 nm to 800 nm wavelength of the MEH-PPV device were discussed. The turn-on voltage is almost 1 V and the result showed that higher intensity with 5 V turn-on voltages.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128627665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706541
N. C. Rosid, Z. Johari, M. Ahmadi, R. Ismail
In this paper, an analytical density of states modeling and simulation study was performed for 3m, 3m+1 and 3m+2 armchair-edge graphene nanoribbon under smaller tensile uniaxial strain. It has been discovered that the irregular variation in DOS as a function of energy when the tensile uniaxial strain is increased from 0% to 3%. In addition, despite to be reduced in terms of energy gap, 3m+1-AGNR is reported to have higher DOS compared to the other families of AGNR while the energy gap opening is confirmed to behave according to its family's behavior.
{"title":"The effect of width on graphene nanoribbon density of state under uniaxial strain","authors":"N. C. Rosid, Z. Johari, M. Ahmadi, R. Ismail","doi":"10.1109/RSM.2013.6706541","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706541","url":null,"abstract":"In this paper, an analytical density of states modeling and simulation study was performed for 3m, 3m+1 and 3m+2 armchair-edge graphene nanoribbon under smaller tensile uniaxial strain. It has been discovered that the irregular variation in DOS as a function of energy when the tensile uniaxial strain is increased from 0% to 3%. In addition, despite to be reduced in terms of energy gap, 3m+1-AGNR is reported to have higher DOS compared to the other families of AGNR while the energy gap opening is confirmed to behave according to its family's behavior.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"301 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130979644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706571
B. Majlis
Rapid development of microelectronic technology in past four decade is closely related to remarkable progress of technological tools. These new tools may be used for fabrication of MEMS (Micro-ElectroMechanical-System) which integrate microelectronic and micromechanical structures in one system enabling interdisciplinary application. Although MEMS have grown from microelectronics, they are different in technological approach. Using MEMS approach, called microfluidic, small volume of fluid down to less than pico liters can be handled. The scaling of single or multiple lab process down to chip-format known as Lab-on-a-Chip (LOC). Micro and nanoparticles handling can be done using LOC which combines several laboratory functions on a single chip that is only a few millimeters to a few square centimeters in size. MEMS is used to perform chemical analysis by combining laboratory processes on a single chip. The basis for most LOC fabrication processes is photolithography directly derived from microelectronic fabrication. For specific optical characteristics, bio or chemical compatibility, lower production costs and faster prototyping, new processes have been developed such as glass, ceramics and metal etching, deposition and bonding, PDMS process or soft lithography, as well as fast replication methods via electroplating, injection molding and embossing. This talk also discusses several research activities related to the development of LOC conducted at IMEN, UKM Malaysia to handle biological process for medical applications.
{"title":"MEMS and lab on chip: Interfacing macro to nano world","authors":"B. Majlis","doi":"10.1109/RSM.2013.6706571","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706571","url":null,"abstract":"Rapid development of microelectronic technology in past four decade is closely related to remarkable progress of technological tools. These new tools may be used for fabrication of MEMS (Micro-ElectroMechanical-System) which integrate microelectronic and micromechanical structures in one system enabling interdisciplinary application. Although MEMS have grown from microelectronics, they are different in technological approach. Using MEMS approach, called microfluidic, small volume of fluid down to less than pico liters can be handled. The scaling of single or multiple lab process down to chip-format known as Lab-on-a-Chip (LOC). Micro and nanoparticles handling can be done using LOC which combines several laboratory functions on a single chip that is only a few millimeters to a few square centimeters in size. MEMS is used to perform chemical analysis by combining laboratory processes on a single chip. The basis for most LOC fabrication processes is photolithography directly derived from microelectronic fabrication. For specific optical characteristics, bio or chemical compatibility, lower production costs and faster prototyping, new processes have been developed such as glass, ceramics and metal etching, deposition and bonding, PDMS process or soft lithography, as well as fast replication methods via electroplating, injection molding and embossing. This talk also discusses several research activities related to the development of LOC conducted at IMEN, UKM Malaysia to handle biological process for medical applications.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125516996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706522
A. T. Z. Yeow, V. Retnasamy, Z. Sauli, G. S. Chui
This paper reports the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE). Platinum metallization layer has high thermal coefficient resistance and inert to oxygen. A total of four controllable process variables, with 16 sets of experiments were studied using a systematically designed design of experiment (DOE). The four variables in the investigation are ICP power, Bias power, working pressure, and type of gaseous used. All four factors gave negative effects. This suggest that the surface roughness decreses when ICP power, Bias power, and working pressure is high. In addition, the CF4+Ar gives higher values of surface roughness compared to SF6+Ar.
{"title":"Surface roughness analysis on platinum deposited wafer after reactive ion ecthing using SF6+Argon/CF4+Argon gaseous","authors":"A. T. Z. Yeow, V. Retnasamy, Z. Sauli, G. S. Chui","doi":"10.1109/RSM.2013.6706522","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706522","url":null,"abstract":"This paper reports the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE). Platinum metallization layer has high thermal coefficient resistance and inert to oxygen. A total of four controllable process variables, with 16 sets of experiments were studied using a systematically designed design of experiment (DOE). The four variables in the investigation are ICP power, Bias power, working pressure, and type of gaseous used. All four factors gave negative effects. This suggest that the surface roughness decreses when ICP power, Bias power, and working pressure is high. In addition, the CF4+Ar gives higher values of surface roughness compared to SF6+Ar.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"243 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122568996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706523
P. Susthitha Menon, S. K. Tasirin, I. Ahmad, S. Fazlili Abdullah, P. R. Apte
Silicon-on-insulator (SOI)-based lateral PIN photodiodes using SiGe/Si multilayer quantum wells (MQW) are suitable for applications in the near-infrared range both for sensing and optical fiber communication application. The objective of this paper is to optimize the process parameters for such a device using Taguchi's L27 orthogonal array. Five device process parameters and two device noise factors were identified to make the virtual device design insensitive to variation in the selected fabrication parameters. The results obtained for responsivity after the optimization approach was 0.33 A/W for the optimized device with intrinsic region length of 6 μm, photo-absorption layer thickness of 0.505 μm, incident optical power of 0.5 mW/cm2, bias voltage of 3.5 V and SOI layer thickness of 0.5 μm. The percentage of improvement for the device's responsivity is 27% as compared to the previous work.
{"title":"Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array","authors":"P. Susthitha Menon, S. K. Tasirin, I. Ahmad, S. Fazlili Abdullah, P. R. Apte","doi":"10.1109/RSM.2013.6706523","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706523","url":null,"abstract":"Silicon-on-insulator (SOI)-based lateral PIN photodiodes using SiGe/Si multilayer quantum wells (MQW) are suitable for applications in the near-infrared range both for sensing and optical fiber communication application. The objective of this paper is to optimize the process parameters for such a device using Taguchi's L27 orthogonal array. Five device process parameters and two device noise factors were identified to make the virtual device design insensitive to variation in the selected fabrication parameters. The results obtained for responsivity after the optimization approach was 0.33 A/W for the optimized device with intrinsic region length of 6 μm, photo-absorption layer thickness of 0.505 μm, incident optical power of 0.5 mW/cm2, bias voltage of 3.5 V and SOI layer thickness of 0.5 μm. The percentage of improvement for the device's responsivity is 27% as compared to the previous work.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"131 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120908353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706548
J. W. Low, N. Nayan, M. Z. Sahdan, M. K. Ahmad, Ali Yeon Md Shakaff, A. Zakaria, A. Zain
Cupric Oxide (CuO) is one of the p-type metal oxide semiconductors that are suitable for use in gas sensing device. The copper oxide thin film was prepared on silicon wafer by sputtering of pure copper target at difference deposition time of 5 min, 10 min and 15 min using RF magnetron sputtering technique. Argon flow rate, oxygen flow rate, RF power and working pressure were fixed at 50 sccm, 8 sccm, 400 W and 22.5 mTorr, respectively. The influence of the deposition time towards the surface morphology, topography and thickness has been investigated. SEM and AFM analysis showed that the grain size of the films increases with the increase of deposition time. However, the surface structure of the films remains the same. In addition, it is noticed that when the deposition time increased, the surface of the films becomes rougher. The deposition rate was approximately 29 nm/min, and it was evaluated from the film thickness deposited at several times.
{"title":"Morphology, topography and thickness of copper oxide thin films deposited using magnetron sputtering technique","authors":"J. W. Low, N. Nayan, M. Z. Sahdan, M. K. Ahmad, Ali Yeon Md Shakaff, A. Zakaria, A. Zain","doi":"10.1109/RSM.2013.6706548","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706548","url":null,"abstract":"Cupric Oxide (CuO) is one of the p-type metal oxide semiconductors that are suitable for use in gas sensing device. The copper oxide thin film was prepared on silicon wafer by sputtering of pure copper target at difference deposition time of 5 min, 10 min and 15 min using RF magnetron sputtering technique. Argon flow rate, oxygen flow rate, RF power and working pressure were fixed at 50 sccm, 8 sccm, 400 W and 22.5 mTorr, respectively. The influence of the deposition time towards the surface morphology, topography and thickness has been investigated. SEM and AFM analysis showed that the grain size of the films increases with the increase of deposition time. However, the surface structure of the films remains the same. In addition, it is noticed that when the deposition time increased, the surface of the films becomes rougher. The deposition rate was approximately 29 nm/min, and it was evaluated from the film thickness deposited at several times.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117038124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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