Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706471
B. S. Rao, M. Nurfaiz, U. Hashim
Sugar is carbohydrate sweet-flavoured substance that composed of carbon, oxygen and hydrogen. It is an important component to provide sweet taste in food. Besides, it also provides immediate energy to complete daily routine life. However, uncontrolled amount of sugar can lead to serious health complications and diseases such as Hypoglycemia (low sugar in blood), syndrome X, diabetes and heart disease. Low amount of sugar in bloodstream may cause nausea and dizziness. Besides that, it also can be used as sensor to detect the amount of sugar in beverages. Here, sugar is used as a reference measurement to test the functionality of the device before testing it in real life using glucose samples. In future, real urine samples will be used to measure concentration of glucose in diabetic patients. In this paper, sugar concentration measurement based on microgap biosensor is fabricated by using conventional photolithography process. Silicon was used as the substrate material and followed by layers of Silicon dioxide (SiO2), Polysilicon, Titanium (Ti) and Gold (Au). Chrome mask were used to transfer pattern of microgap and contact pads onto the silicon substrate. The device design has been optimised to achieve few performance factors that includes accuracy, sensitivity, response time and fabrication cost. A number of sugar concentrations were prepared by diluting it with DI water for measurement process by electrical characterization. In this work, studies and analysis were conducted based on different concentration of sugar on constant sized microgap and based on different size of microgap structure on constant sugar concentration. As the result, the experiment has been successfully yielded a high sensitive microgap sensor and the lowest detected sugar concentration sample is 0.0245gml-1. This method of biosensing provides a very simple and promising detection technique for any kind of biomolecules that includes proteins, DNA, enzymes, antibody and antigen.
{"title":"Quantitative measurement of sugar concentration using in house fabricated microgap biosensor","authors":"B. S. Rao, M. Nurfaiz, U. Hashim","doi":"10.1109/RSM.2013.6706471","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706471","url":null,"abstract":"Sugar is carbohydrate sweet-flavoured substance that composed of carbon, oxygen and hydrogen. It is an important component to provide sweet taste in food. Besides, it also provides immediate energy to complete daily routine life. However, uncontrolled amount of sugar can lead to serious health complications and diseases such as Hypoglycemia (low sugar in blood), syndrome X, diabetes and heart disease. Low amount of sugar in bloodstream may cause nausea and dizziness. Besides that, it also can be used as sensor to detect the amount of sugar in beverages. Here, sugar is used as a reference measurement to test the functionality of the device before testing it in real life using glucose samples. In future, real urine samples will be used to measure concentration of glucose in diabetic patients. In this paper, sugar concentration measurement based on microgap biosensor is fabricated by using conventional photolithography process. Silicon was used as the substrate material and followed by layers of Silicon dioxide (SiO2), Polysilicon, Titanium (Ti) and Gold (Au). Chrome mask were used to transfer pattern of microgap and contact pads onto the silicon substrate. The device design has been optimised to achieve few performance factors that includes accuracy, sensitivity, response time and fabrication cost. A number of sugar concentrations were prepared by diluting it with DI water for measurement process by electrical characterization. In this work, studies and analysis were conducted based on different concentration of sugar on constant sized microgap and based on different size of microgap structure on constant sugar concentration. As the result, the experiment has been successfully yielded a high sensitive microgap sensor and the lowest detected sugar concentration sample is 0.0245gml-1. This method of biosensing provides a very simple and promising detection technique for any kind of biomolecules that includes proteins, DNA, enzymes, antibody and antigen.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132857065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706575
A. Dehzangi, F. Larki, B. Majlis, M. Hamidon, M. Navasery, E. Gharibshahi, N. Khalilzadeh, M. Vakilian, E. Saion
Side gate p-type Junctionless Silicon transistor is fabricated by AFM nanolithography on low-doped (105 cm-3) SOI wafer. In this work, the simulation characteristic of the device using TCAD Sentaurus in on state will be studied. The results show that the device is the pinch off transistor, works in on state for zero gate voltage in depletion mode. Negative gate voltage drives the device into on state, but unable to make significant effect on drain current as accmulation mode. Simulation results for valence band energy, electric field and hole density are investigated along the active regions. The influence of the electric field due to the applied voltages of VDS and VG on charge distribution is much more when the device operates at the saturation region. The hole quasi-Fermi level has a positive slope showing the current flows from source to drain.
{"title":"Numerical study of side gate junction-less transistor in on state","authors":"A. Dehzangi, F. Larki, B. Majlis, M. Hamidon, M. Navasery, E. Gharibshahi, N. Khalilzadeh, M. Vakilian, E. Saion","doi":"10.1109/RSM.2013.6706575","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706575","url":null,"abstract":"Side gate p-type Junctionless Silicon transistor is fabricated by AFM nanolithography on low-doped (105 cm-3) SOI wafer. In this work, the simulation characteristic of the device using TCAD Sentaurus in on state will be studied. The results show that the device is the pinch off transistor, works in on state for zero gate voltage in depletion mode. Negative gate voltage drives the device into on state, but unable to make significant effect on drain current as accmulation mode. Simulation results for valence band energy, electric field and hole density are investigated along the active regions. The influence of the electric field due to the applied voltages of VDS and VG on charge distribution is much more when the device operates at the saturation region. The hole quasi-Fermi level has a positive slope showing the current flows from source to drain.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123308257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706478
Siti Musliha Ajmal Binti Mokhtar, W. Abdullah
This paper will first review on some applications of newly found passive element, the memristor. Utilizing the beneficial characteristic of memristor where it can remember its last state, more and more improvements on today electronic designs has been proposed. However, it is crucial to observe the behavior of memristor model before applying into circuits, especially when the memristor is coupled with other devices. In this paper, LTspice memristor model is used to simulate memristor behavior and applied to the basic delay element circuit. The circuit used a tristate inverter as the delay element. It controls the current flowing to the parasitic capacitor, thus controlling the delay. The compatibility of memristor with the delay element is also in consideration to ensure the functionality of the circuits. At the end, a basic delay element using inverter and memristor is presented. This paper is divided into 4 sections, including the introduction where few examples of memristor applications are explained. It follows by next section where the inverter delay characteristic is narrated. Section 3 is about a mathematical model of memristor that been used to provide a specific memristor resistance in order to get certain delay value during simulation. Using LT spice, a memristor based delay circuit design is then proposed and the delay is observed by circuit simulation. In conclusion, the calculated R and delay value is then compared to the simulation result in order to verify circuit functionality.
{"title":"Memristor based delay element using current starved inverter","authors":"Siti Musliha Ajmal Binti Mokhtar, W. Abdullah","doi":"10.1109/RSM.2013.6706478","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706478","url":null,"abstract":"This paper will first review on some applications of newly found passive element, the memristor. Utilizing the beneficial characteristic of memristor where it can remember its last state, more and more improvements on today electronic designs has been proposed. However, it is crucial to observe the behavior of memristor model before applying into circuits, especially when the memristor is coupled with other devices. In this paper, LTspice memristor model is used to simulate memristor behavior and applied to the basic delay element circuit. The circuit used a tristate inverter as the delay element. It controls the current flowing to the parasitic capacitor, thus controlling the delay. The compatibility of memristor with the delay element is also in consideration to ensure the functionality of the circuits. At the end, a basic delay element using inverter and memristor is presented. This paper is divided into 4 sections, including the introduction where few examples of memristor applications are explained. It follows by next section where the inverter delay characteristic is narrated. Section 3 is about a mathematical model of memristor that been used to provide a specific memristor resistance in order to get certain delay value during simulation. Using LT spice, a memristor based delay circuit design is then proposed and the delay is observed by circuit simulation. In conclusion, the calculated R and delay value is then compared to the simulation result in order to verify circuit functionality.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"325 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123506653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706536
R. Prasad, U. Hashim, K. L. Foo, M. Shafiq
Zinc oxide nanorods was synthesized by using hydrothermal growth due to simplicity and involve low temperature processing that is 930C. Low temperature processing is very essential for ZnO nanorod synthesis because defect on developing nano-device can be avoided. Development of nano-device with minimal defect is essential to ensure that the performances of the nano device is optimum for sensing bio-molecular substances. Zinc oxide has become the most remarkable choice among other metal oxides semiconductor due to many criteria such as economical cost, unique physical and electrical properties and biocompatible. Initially, ZnO thin films was prepared by using sol gel method. The ZnO seed solution was prepared using conventional sol-gel route. Zinc oxide solution was prepared in two different solvents which are isopropanol (IPA) and methanol (MeOH) in order to investigate the influence of solvent to the quality of ZnO nanorods. MEA, the sol stabilizer was added to the solution for the following 2 hours. Aluminum IDE electrode was deposited on the silicon wafer sample <;100> using traditional wet etching method. Positive photoresist (PR) was coated on the silicon wafer and followed with soft back for 90 seconds. IDE pattern transfer was done by exposing UV light (365nm) onto the PR for 10 seconds. After that, developing and etching process occurred for pattern transfer the IDE electrode onto the silicon wafer. The prepared seed solution was coated on silicon wafer by using speed coating method. Some of the coated samples underwent annealing process at temperature 2000C for 2 hours. The annealed and non-annealed sample undergoes hydrothermal growth method to synthesize ZnO nanorods. The synthesized nanorods underwent I-V test and capacitances to investigate the electrical behavior of ZnO nanorods. The annealed ZnO nanorods provided higher current, which was 900μA, as compared the non-annealed ZnO nanorods which was only 55 μA.
{"title":"Investigating the annealing effect on the conventional growth of ZnO nanorod through electrical characterization","authors":"R. Prasad, U. Hashim, K. L. Foo, M. Shafiq","doi":"10.1109/RSM.2013.6706536","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706536","url":null,"abstract":"Zinc oxide nanorods was synthesized by using hydrothermal growth due to simplicity and involve low temperature processing that is 930C. Low temperature processing is very essential for ZnO nanorod synthesis because defect on developing nano-device can be avoided. Development of nano-device with minimal defect is essential to ensure that the performances of the nano device is optimum for sensing bio-molecular substances. Zinc oxide has become the most remarkable choice among other metal oxides semiconductor due to many criteria such as economical cost, unique physical and electrical properties and biocompatible. Initially, ZnO thin films was prepared by using sol gel method. The ZnO seed solution was prepared using conventional sol-gel route. Zinc oxide solution was prepared in two different solvents which are isopropanol (IPA) and methanol (MeOH) in order to investigate the influence of solvent to the quality of ZnO nanorods. MEA, the sol stabilizer was added to the solution for the following 2 hours. Aluminum IDE electrode was deposited on the silicon wafer sample <;100> using traditional wet etching method. Positive photoresist (PR) was coated on the silicon wafer and followed with soft back for 90 seconds. IDE pattern transfer was done by exposing UV light (365nm) onto the PR for 10 seconds. After that, developing and etching process occurred for pattern transfer the IDE electrode onto the silicon wafer. The prepared seed solution was coated on silicon wafer by using speed coating method. Some of the coated samples underwent annealing process at temperature 2000C for 2 hours. The annealed and non-annealed sample undergoes hydrothermal growth method to synthesize ZnO nanorods. The synthesized nanorods underwent I-V test and capacitances to investigate the electrical behavior of ZnO nanorods. The annealed ZnO nanorods provided higher current, which was 900μA, as compared the non-annealed ZnO nanorods which was only 55 μA.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115879992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706463
M. Said, J. Yunas, B. Majlis, B. Bais, A. A. Hamzah
A design and optimization of the magnetic particles embedded inside a flexible membrane and factors contributing to the membrane performance have been studied. In this work, Nickel (Ni) is used as magnetic particles and Polydimethylsiloxane (PDMS) is used for membrane material which is considered a matrix component of the flexible membrane. Ni particles with various particle sizes, arrangement and spaces between Ni particles are simulated by using Comsol Multiphysics 4.2. As a result, the optimum design of magnetic particles embedded in membrane for large deflection is by having circular shape membrane with low density of tiny magnetic particles in planar distribution. A preliminary simulation result has been also compared with the theoretical calculation to validate the analysis.
{"title":"Design and optimization of magnetic particles embedded in PDMS membrane","authors":"M. Said, J. Yunas, B. Majlis, B. Bais, A. A. Hamzah","doi":"10.1109/RSM.2013.6706463","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706463","url":null,"abstract":"A design and optimization of the magnetic particles embedded inside a flexible membrane and factors contributing to the membrane performance have been studied. In this work, Nickel (Ni) is used as magnetic particles and Polydimethylsiloxane (PDMS) is used for membrane material which is considered a matrix component of the flexible membrane. Ni particles with various particle sizes, arrangement and spaces between Ni particles are simulated by using Comsol Multiphysics 4.2. As a result, the optimum design of magnetic particles embedded in membrane for large deflection is by having circular shape membrane with low density of tiny magnetic particles in planar distribution. A preliminary simulation result has been also compared with the theoretical calculation to validate the analysis.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"277 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124457884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706542
M. Ooi, A. Aziz
Nanocrystalline Pt particles synthesized by solvothermal technique assisted with methylamine were investigated. The effect of different amounts of methylamine on the formation of Pt nanocrystal were characterized and elaborated. Small and spherical - like particles were observed for Pt synthesized under the low amount (0.10 mL) of methylamine whilst, concave polyhedral Pt nanocrystal with high - index {411} facets were observed for Pt synthesized under high amount (0.20 mL) of methylamine. The synthesized concave Pt nanocrystal exhibit high absorption peak at 215 nm corresponding to colloidal Pt. The synthesized concave polyhedral structures could be used as a potential catalyst in fuel cells application.
{"title":"Spherical to polyhedral Pt nanocrystal formation assisted with methylamine","authors":"M. Ooi, A. Aziz","doi":"10.1109/RSM.2013.6706542","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706542","url":null,"abstract":"Nanocrystalline Pt particles synthesized by solvothermal technique assisted with methylamine were investigated. The effect of different amounts of methylamine on the formation of Pt nanocrystal were characterized and elaborated. Small and spherical - like particles were observed for Pt synthesized under the low amount (0.10 mL) of methylamine whilst, concave polyhedral Pt nanocrystal with high - index {411} facets were observed for Pt synthesized under high amount (0.20 mL) of methylamine. The synthesized concave Pt nanocrystal exhibit high absorption peak at 215 nm corresponding to colloidal Pt. The synthesized concave polyhedral structures could be used as a potential catalyst in fuel cells application.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115580463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706515
M. Hannas, A. Manut, Nurul Hafizah A. Rahman, A. B. Rosli, M. Rusop
In this work, ZnO thin films were deposited on glass substrates using spin coating method. Different annealing temperature from 400 to 550°C significantly distresses the nature of electrical and optical properties of ZnO thin films have been investigated. The effect of annealing temperature on optical and electrical properties of nanostuctured ZnO thin films deposited by spin coating method has been studied. The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. The electrical properties were analyzed using I-V measurement (CEP 2000). Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The optical transmittance spectrums showed the average transmittance of ZnO thin film with different annealing temperature higher than 90% in visible wavelength region. The optical band properties of the nanostructured ZnO thin films were analyzed by UV Vis and Tauc method was accepted to estimate the optical gap and absorption coefficient. The resistivity of the film decreased as the annealing temperature increased from 400 to 550oC. The highest conductivity values of ZnO thin film was obtained at 500°C with value 0.000197 Scm-1. Moreover, the higher porosity was found at 400oC with value 57.5%. The higher porosity of ZnO thin film can be expected the high sensitivity for gas sensor due to the material has a comparatively large surface area.
{"title":"Effect of annealing temperature on electrical and optical properties of ZnO thin films prepared by sol gel method","authors":"M. Hannas, A. Manut, Nurul Hafizah A. Rahman, A. B. Rosli, M. Rusop","doi":"10.1109/RSM.2013.6706515","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706515","url":null,"abstract":"In this work, ZnO thin films were deposited on glass substrates using spin coating method. Different annealing temperature from 400 to 550°C significantly distresses the nature of electrical and optical properties of ZnO thin films have been investigated. The effect of annealing temperature on optical and electrical properties of nanostuctured ZnO thin films deposited by spin coating method has been studied. The optical properties were characterized by ultraviolet visible (UV-VIS-NIR) spectrophotometer. The electrical properties were analyzed using I-V measurement (CEP 2000). Gold (Au) was used as a metal contact using electron beam thermal evaporator (ULVAC). The optical transmittance spectrums showed the average transmittance of ZnO thin film with different annealing temperature higher than 90% in visible wavelength region. The optical band properties of the nanostructured ZnO thin films were analyzed by UV Vis and Tauc method was accepted to estimate the optical gap and absorption coefficient. The resistivity of the film decreased as the annealing temperature increased from 400 to 550oC. The highest conductivity values of ZnO thin film was obtained at 500°C with value 0.000197 Scm-1. Moreover, the higher porosity was found at 400oC with value 57.5%. The higher porosity of ZnO thin film can be expected the high sensitivity for gas sensor due to the material has a comparatively large surface area.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115958052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706539
M. M. Ramli, S. S. Isa, S. Henley
Vacuum filtration method was applied to build optically homogeneous film of palladium (Pd) nanoparticles dispersed multi-walled carbon nanotubes (MWCNTs) networks on plastic substrate. Measurement of the sheet resistance as a function of MWCNTs concentration showed a transition from 2D percolation to 3D conduction behaviour when the concentration of MWCNTs exceeded 0.015 mg/ml. The electrical response to H2 gas exposure was investigated at room temperature.
{"title":"Fabrication of multi-walled carbon nanotubes hydrogen sensor on plastic","authors":"M. M. Ramli, S. S. Isa, S. Henley","doi":"10.1109/RSM.2013.6706539","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706539","url":null,"abstract":"Vacuum filtration method was applied to build optically homogeneous film of palladium (Pd) nanoparticles dispersed multi-walled carbon nanotubes (MWCNTs) networks on plastic substrate. Measurement of the sheet resistance as a function of MWCNTs concentration showed a transition from 2D percolation to 3D conduction behaviour when the concentration of MWCNTs exceeded 0.015 mg/ml. The electrical response to H2 gas exposure was investigated at room temperature.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114942238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706470
Noraini Marsi, B. Majlis, A. A. Hamzah, Faisal Mohd Yasin
Two silicon wafer size of 2.5 mm × 2.5 mm with 1 μm LPCVD silicon carbide (SiC) and 200 nm LPCVD silicon nitride, respectively has been characterize direct bonding between silicon nitride and silicon carbide surfaces. Chemical-mechanical polishing (CMP) treatment processes were performed to reduce the surface roughness of both surfaces before the surface are bonded to each other. The surface roughness shows about 1 μm before CMP treatment, while the smoothness of the surface roughness values as low as 20 nm was obtained after CMP treatment as measured by infinite focus microscopy (IFM). The interface between SiC/SiN layers on Si wafer was inspected by scanning electron microscopy (SEM). Heat treatment with different annealing temperatures is indentified that an optimized annealing process was at 400 °C for 2 hours to allow the bond-forming interface between silicon nitride and silicon carbide surfaces being bonded at 8.3467 MPa.
{"title":"Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor","authors":"Noraini Marsi, B. Majlis, A. A. Hamzah, Faisal Mohd Yasin","doi":"10.1109/RSM.2013.6706470","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706470","url":null,"abstract":"Two silicon wafer size of 2.5 mm × 2.5 mm with 1 μm LPCVD silicon carbide (SiC) and 200 nm LPCVD silicon nitride, respectively has been characterize direct bonding between silicon nitride and silicon carbide surfaces. Chemical-mechanical polishing (CMP) treatment processes were performed to reduce the surface roughness of both surfaces before the surface are bonded to each other. The surface roughness shows about 1 μm before CMP treatment, while the smoothness of the surface roughness values as low as 20 nm was obtained after CMP treatment as measured by infinite focus microscopy (IFM). The interface between SiC/SiN layers on Si wafer was inspected by scanning electron microscopy (SEM). Heat treatment with different annealing temperatures is indentified that an optimized annealing process was at 400 °C for 2 hours to allow the bond-forming interface between silicon nitride and silicon carbide surfaces being bonded at 8.3467 MPa.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129760109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706547
S. Farhana, A. Alam, Sheroz Khan
In this paper, we describe the development of small signal model of a CNTFET. The development consist of high frequency response of CNTFET. The CNTFET generates higher output rather than the conventional Si MOSFET. An SPICE model for enhancement mode Carbon nanotube transistor has been developed. The performance analysis of the CNTFET shows the desirable performance parameter in terms of 10 Thz frequency with 1.8 mS.
{"title":"High frequency small signal modeling of CNTFET","authors":"S. Farhana, A. Alam, Sheroz Khan","doi":"10.1109/RSM.2013.6706547","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706547","url":null,"abstract":"In this paper, we describe the development of small signal model of a CNTFET. The development consist of high frequency response of CNTFET. The CNTFET generates higher output rather than the conventional Si MOSFET. An SPICE model for enhancement mode Carbon nanotube transistor has been developed. The performance analysis of the CNTFET shows the desirable performance parameter in terms of 10 Thz frequency with 1.8 mS.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129803978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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