首页 > 最新文献

AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)最新文献

英文 中文
A temperature sensor in 0.6 /spl mu/m CMOS technology 温度传感器采用0.6 /spl mu/m CMOS技术
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824042
M. Weng, Jiin-Chuan Wu
A fully integrated CMOS temperature sensor is presented. The design uses parasitic substrate bipolar transistors as a temperature sensor. The temperature and reference signals are first converted into current signals by a voltage-to-current converter and then converted to a digital output by a sigma-delta analog-to-digital converter. Fabricated in a 0.6 /spl mu/m CMOS process, this circuit occupies an active area of 0.7 mm/sup 2/. In the temperature range from 40 to 130/spl deg/C, the error is /spl plusmn/1.5/spl deg/C after one-point calibration.
介绍了一种全集成的CMOS温度传感器。该设计采用寄生衬底双极晶体管作为温度传感器。温度和参考信号首先通过电压-电流转换器转换成电流信号,然后通过sigma-delta模数转换器转换成数字输出。该电路采用0.6 /spl μ m的CMOS工艺制作,占据0.7 mm/sup /的有源面积。在40 ~ 130/spl℃温度范围内,单点校准后误差为/spl + /1.5/spl℃。
{"title":"A temperature sensor in 0.6 /spl mu/m CMOS technology","authors":"M. Weng, Jiin-Chuan Wu","doi":"10.1109/APASIC.1999.824042","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824042","url":null,"abstract":"A fully integrated CMOS temperature sensor is presented. The design uses parasitic substrate bipolar transistors as a temperature sensor. The temperature and reference signals are first converted into current signals by a voltage-to-current converter and then converted to a digital output by a sigma-delta analog-to-digital converter. Fabricated in a 0.6 /spl mu/m CMOS process, this circuit occupies an active area of 0.7 mm/sup 2/. In the temperature range from 40 to 130/spl deg/C, the error is /spl plusmn/1.5/spl deg/C after one-point calibration.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131715987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A CMOS analog vector quantizer for pattern recognition 用于模式识别的CMOS模拟矢量量化器
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824041
Y. Hung, Bin-Da Liu
A linear mean-absolute-difference (MAD) cell is designed. Based on this cell and winner-take-all circuit, we propose a parallel analog vector-quantizer for pattern recognition. The experimental circuit is constituted by one input pattern and 16 template patterns with 16 elements. This circuit had been simulated using 0.5 /spl mu/m CMOS technology by HSPICE. The results show that a pattern can be correctly identified if the difference of the MAD distance metric is larger or smaller than 100 mV. Simulation results demonstrate 250 ns identified time and 16 mW power dissipation for single 3.3 V voltage supply.
设计了一种线性平均绝对差分(MAD)单元。基于该单元和赢者通吃电路,我们提出了一种用于模式识别的并行模拟矢量量化器。实验电路由一个输入模式和16个模板模式组成,包含16个元件。利用HSPICE软件采用0.5 /spl μ m CMOS技术对该电路进行了仿真。结果表明,当MAD距离度量的差值大于或小于100 mV时,可以正确识别出一种模式。仿真结果表明,单个3.3 V电压电源的识别时间为250 ns,功耗为16 mW。
{"title":"A CMOS analog vector quantizer for pattern recognition","authors":"Y. Hung, Bin-Da Liu","doi":"10.1109/APASIC.1999.824041","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824041","url":null,"abstract":"A linear mean-absolute-difference (MAD) cell is designed. Based on this cell and winner-take-all circuit, we propose a parallel analog vector-quantizer for pattern recognition. The experimental circuit is constituted by one input pattern and 16 template patterns with 16 elements. This circuit had been simulated using 0.5 /spl mu/m CMOS technology by HSPICE. The results show that a pattern can be correctly identified if the difference of the MAD distance metric is larger or smaller than 100 mV. Simulation results demonstrate 250 ns identified time and 16 mW power dissipation for single 3.3 V voltage supply.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"518 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127616469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High power 30 W and high efficiency 80% piezoelectric transformer for EB 大功率30w,高效80%的压电变压器
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824045
Jin-H. Chung, Seung-Min Lee, Mike-Myung-Ok Lee, Yang-Ho Moon
Micro-electro-mechanical circuit for 30 W high power Piezoelectric Transformer (PT) with modeling and characterizations to be used in Electronic Ballast (EB) is designed for the first time. Significant parameters at 77.6 KHz of frequency and 87 mA of low input current result in excellent efficiency of 84% and high voltage gain of 0.9 for 30 W high power for electronic ballast, which can save much energy and be a great domestic asset. Our proposed PT circuit with proper optimization of circuit parameters can also enhance further power and efficiency for future high power applications.
首次设计了用于电子镇流器(EB)的30w大功率压电变压器(PT)的微机电电路,并进行了建模和表征。在77.6 KHz的频率和87 mA的低输入电流下,电子镇流器的效率高达84%,高电压增益为0.9,功率为30 W,可节省大量能源,是一项重要的国货。我们提出的PT电路通过适当优化电路参数也可以进一步提高功率和效率,为未来的高功率应用提供支持。
{"title":"High power 30 W and high efficiency 80% piezoelectric transformer for EB","authors":"Jin-H. Chung, Seung-Min Lee, Mike-Myung-Ok Lee, Yang-Ho Moon","doi":"10.1109/APASIC.1999.824045","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824045","url":null,"abstract":"Micro-electro-mechanical circuit for 30 W high power Piezoelectric Transformer (PT) with modeling and characterizations to be used in Electronic Ballast (EB) is designed for the first time. Significant parameters at 77.6 KHz of frequency and 87 mA of low input current result in excellent efficiency of 84% and high voltage gain of 0.9 for 30 W high power for electronic ballast, which can save much energy and be a great domestic asset. Our proposed PT circuit with proper optimization of circuit parameters can also enhance further power and efficiency for future high power applications.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129839783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A universal sensor signal conditioning ASIC 一种通用传感器信号调理专用集成电路
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824043
Zheng Zheng, Raminder, J. Singh, U. Sridhar, Tan Khen-Sang
This paper described a low cost universal sensor signal condition ASIC for bridge type sensors. The ASIC was produced with standard double metal, double poly 0.8 /spl mu/m silicon CMOS process and can correct the sensor's offset, offset temperature coefficient, sensitivity and sensitivity temperature coefficient. We have used this ASIC to signal condition silicon piezo-resistive pressure sensor to a total error of less than /spl plusmn/1% of the sensor's full scale output (FSO) in a temperature range of -40/spl deg/C to 125/spl deg/C. The ASIC can provide a low cost solution for the calibration of bridge type sensors such as pressure sensor, Hall effect sensor and MR/GMR sensor.
介绍了一种用于桥式传感器的低成本通用传感器信号条件专用集成电路。该ASIC采用标准双金属、双聚0.8 /spl mu/m硅CMOS工艺生产,可校正传感器的偏置、偏置温度系数、灵敏度和灵敏度温度系数。我们已经使用该ASIC来信号条件硅压阻压力传感器在-40/spl°C至125/spl°C的温度范围内,总误差小于传感器满量程输出(FSO)的/spl + /1%。该ASIC可为压力传感器、霍尔效应传感器和MR/GMR传感器等桥式传感器的校准提供低成本的解决方案。
{"title":"A universal sensor signal conditioning ASIC","authors":"Zheng Zheng, Raminder, J. Singh, U. Sridhar, Tan Khen-Sang","doi":"10.1109/APASIC.1999.824043","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824043","url":null,"abstract":"This paper described a low cost universal sensor signal condition ASIC for bridge type sensors. The ASIC was produced with standard double metal, double poly 0.8 /spl mu/m silicon CMOS process and can correct the sensor's offset, offset temperature coefficient, sensitivity and sensitivity temperature coefficient. We have used this ASIC to signal condition silicon piezo-resistive pressure sensor to a total error of less than /spl plusmn/1% of the sensor's full scale output (FSO) in a temperature range of -40/spl deg/C to 125/spl deg/C. The ASIC can provide a low cost solution for the calibration of bridge type sensors such as pressure sensor, Hall effect sensor and MR/GMR sensor.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129640209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A high performance DSP architecture "MSPM" for digital image processing using embedded DRAM ASIC technologies 采用嵌入式DRAM ASIC技术的数字图像处理的高性能DSP架构“MSPM”
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824124
H. Yoshizawa, T. Tsuruta, N. Kumamoto, M. Kurita
This paper describes the architecture of the "MSPM: Multimedia Signal Processor with embedded Memory". It has been developed to evaluate the architectural effects of 0.35-micron embedded DRAM technologies on the performance. The chip has achieved 24 times the performance of an ordinary RISC processor at the same frequency, and also ten times the performance of an ordinary 16 bit DSP. The improvement has been made possible by the following architectural characteristics: direct-memory-referring instruction sets; SIMD-type-parallel-executing features; byte-aligned-word-access features; and multi-instruction migrating features. The MSPM achieved 800 MOPS@66 MHz with 1.1 Gbyte/s bandwidth. Integration of a 16 Mb DRAM with 128 bit data bus is also reported.
本文介绍了“嵌入式内存多媒体信号处理器”的结构。它是为了评估0.35微米嵌入式DRAM技术对性能的架构影响而开发的。该芯片在相同频率下的性能是普通RISC处理器的24倍,是普通16位DSP的10倍。这种改进是通过以下架构特性实现的:直接内存引用指令集;SIMD-type-parallel-executing功能;byte-aligned-word-access功能;以及多指令迁移特性。MSPM达到800MOPS@66 MHz,带宽为1.1 Gbyte/s。还报道了将16mb DRAM与128位数据总线集成在一起的情况。
{"title":"A high performance DSP architecture \"MSPM\" for digital image processing using embedded DRAM ASIC technologies","authors":"H. Yoshizawa, T. Tsuruta, N. Kumamoto, M. Kurita","doi":"10.1109/APASIC.1999.824124","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824124","url":null,"abstract":"This paper describes the architecture of the \"MSPM: Multimedia Signal Processor with embedded Memory\". It has been developed to evaluate the architectural effects of 0.35-micron embedded DRAM technologies on the performance. The chip has achieved 24 times the performance of an ordinary RISC processor at the same frequency, and also ten times the performance of an ordinary 16 bit DSP. The improvement has been made possible by the following architectural characteristics: direct-memory-referring instruction sets; SIMD-type-parallel-executing features; byte-aligned-word-access features; and multi-instruction migrating features. The MSPM achieved 800 MOPS@66 MHz with 1.1 Gbyte/s bandwidth. Integration of a 16 Mb DRAM with 128 bit data bus is also reported.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117023138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-power full-search motion estimator architecture suitable for random-block match 适合随机块匹配的低功耗全搜索运动估计器结构
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824065
Kyung-Saeng Kim, Dong-Jae Lee, H. Yoo, Kwyro Lee
We propose a new motion estimator with two types of embedded memory banks. Its overall system efficiency is extremely high for full-search block match algorithm (FBMA). The results show that its power-area product is nearly 1.13 and switching-overhead is low between FBMA and random-search block match algorithm in the case of CCIR-601 format.
我们提出了一种基于两种类型的嵌入式存储器的运动估计器。对于全搜索块匹配算法(FBMA)来说,它的整体系统效率极高。结果表明,在CCIR-601格式下,FBMA与随机搜索块匹配算法的功率面积积接近1.13,切换开销较低。
{"title":"Low-power full-search motion estimator architecture suitable for random-block match","authors":"Kyung-Saeng Kim, Dong-Jae Lee, H. Yoo, Kwyro Lee","doi":"10.1109/APASIC.1999.824065","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824065","url":null,"abstract":"We propose a new motion estimator with two types of embedded memory banks. Its overall system efficiency is extremely high for full-search block match algorithm (FBMA). The results show that its power-area product is nearly 1.13 and switching-overhead is low between FBMA and random-search block match algorithm in the case of CCIR-601 format.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122746654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reusable design of run length coder for image compression application 用于图像压缩应用的可重用的运行长度编码器设计
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824082
Seongmo Park, Inhag Park, J. Cha, Hanjin Cho
In this paper, we describe the interface specification and core block design methods for a run length coder of video compression application. It offers high performance and many features to meet multimedia, and digital video applications. We designed the VLSI architecture of the run length coder using VHDL. This design can achieve a high performance for the video coder and is based on H.263 Recommendation. The format of the outputs is compatible with the stream of the variable length coding. The run length coder is implemented by the register transfer level (RTL) of VHDL. The designed block is synthesized by Compass synthesis with 0.5 /spl mu/m CMOS, 3.3 V, technology and reuse as core IP (Intellectual Property) of H.263 and MPEG4 application. The run length coder block contains 4,000 logic gates and a total 1,536 bits of static RAM. The fully synchronous design allows for fast operation while maintaining a low gate count. The core will reuse for multimedia system and digital video applications.
本文描述了一种视频压缩应用中运行长度编码器的接口规范和核心模块设计方法。它提供了高性能和许多功能,以满足多媒体和数字视频应用。我们使用VHDL设计了运行长度编码器的VLSI架构。本设计是基于H.263标准的高性能视频编码器。输出格式与变长编码流兼容。运行长度编码器由VHDL的寄存器传输层(RTL)实现。设计的模块采用Compass合成技术,采用0.5 /spl μ l /m CMOS, 3.3 V,技术和重用作为H.263和MPEG4应用的核心IP(知识产权)。运行长度编码块包含4,000个逻辑门和总共1,536位静态RAM。完全同步设计允许快速操作,同时保持低栅极计数。该核心将用于多媒体系统和数字视频应用。
{"title":"Reusable design of run length coder for image compression application","authors":"Seongmo Park, Inhag Park, J. Cha, Hanjin Cho","doi":"10.1109/APASIC.1999.824082","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824082","url":null,"abstract":"In this paper, we describe the interface specification and core block design methods for a run length coder of video compression application. It offers high performance and many features to meet multimedia, and digital video applications. We designed the VLSI architecture of the run length coder using VHDL. This design can achieve a high performance for the video coder and is based on H.263 Recommendation. The format of the outputs is compatible with the stream of the variable length coding. The run length coder is implemented by the register transfer level (RTL) of VHDL. The designed block is synthesized by Compass synthesis with 0.5 /spl mu/m CMOS, 3.3 V, technology and reuse as core IP (Intellectual Property) of H.263 and MPEG4 application. The run length coder block contains 4,000 logic gates and a total 1,536 bits of static RAM. The fully synchronous design allows for fast operation while maintaining a low gate count. The core will reuse for multimedia system and digital video applications.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122819799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A fail-safe microprocessor using dual synthesizable processor cores 一种使用双可合成处理器核心的故障安全微处理器
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824026
K. Shimamura, S. Yamaguchi, N. Kanekawa, N. Miyazaki, H. Yamada, Y. Takahashi, T. Hirotsu, K. Tomobe, K. Satoh, T. Hotta, R. Fujita
A chip level redundant self-checking fail-safe microprocessor has been developed using a 0.35 /spl mu/m CMOS embedded gate array. The microprocessor integrates two synthesizable processor cores and a self-checking comparator in a single chip. A full-custom processor core was transformed into each of the synthesizable cores for this purpose. Design methodologies suitable for reusing synthesizable processor cores has also been developed. Developed synthesizable processor cores and design methodologies reduce the cost of process migration of the chip. Migrating to the newer process improves the performance of the developed microprocessor with low development cost.
采用0.35 /spl μ m CMOS嵌入式门阵列,研制了一种芯片级冗余自检故障安全微处理器。该微处理器在单个芯片中集成了两个可合成的处理器内核和一个自检比较器。为此,将一个完全自定义的处理器核心转换为每个可合成的核心。适合重用可合成处理器内核的设计方法也得到了发展。开发的可合成处理器内核和设计方法降低了芯片的工艺迁移成本。迁移到较新的工艺可以提高已开发微处理器的性能,同时降低开发成本。
{"title":"A fail-safe microprocessor using dual synthesizable processor cores","authors":"K. Shimamura, S. Yamaguchi, N. Kanekawa, N. Miyazaki, H. Yamada, Y. Takahashi, T. Hirotsu, K. Tomobe, K. Satoh, T. Hotta, R. Fujita","doi":"10.1109/APASIC.1999.824026","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824026","url":null,"abstract":"A chip level redundant self-checking fail-safe microprocessor has been developed using a 0.35 /spl mu/m CMOS embedded gate array. The microprocessor integrates two synthesizable processor cores and a self-checking comparator in a single chip. A full-custom processor core was transformed into each of the synthesizable cores for this purpose. Design methodologies suitable for reusing synthesizable processor cores has also been developed. Developed synthesizable processor cores and design methodologies reduce the cost of process migration of the chip. Migrating to the newer process improves the performance of the developed microprocessor with low development cost.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117087843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 1 V built-in intermediate voltage sensor 内置1v中压传感器
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824088
Jing-Jou Tang
In this paper, a novel circuit design that can detect faults resulting in intermediate voltage values is presented. This design can also be used to detect slow transition faults and the metastability of a circuit under test. The power supply of this circuit is only 1 V. Thus it can be used for not only conventional circuits but also the low voltage (LV) circuits.
本文提出了一种新的电路设计方法,可以检测到中间电压值引起的故障。该设计还可用于检测被测电路的缓慢过渡故障和亚稳态。该电路的电源只有1v。因此,它不仅可以用于传统电路,也可以用于低电压电路。
{"title":"A 1 V built-in intermediate voltage sensor","authors":"Jing-Jou Tang","doi":"10.1109/APASIC.1999.824088","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824088","url":null,"abstract":"In this paper, a novel circuit design that can detect faults resulting in intermediate voltage values is presented. This design can also be used to detect slow transition faults and the metastability of a circuit under test. The power supply of this circuit is only 1 V. Thus it can be used for not only conventional circuits but also the low voltage (LV) circuits.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116921457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wide operating-range acquisition technique for PLL circuits 锁相环电路的宽工作范围采集技术
Pub Date : 1999-08-23 DOI: 10.1109/APASIC.1999.824098
Yi-Cheng Chang, E.W. Greeneich
A wide range phase-locked loop (PLL) circuit using a coarse-steering technique is designed for implementation in MOSIS 1.2 /spl mu/m CMOS technology. The entire PLL circuit has been simulated and can obtain lock in over a frequency range of 160-440 MHz with a 3 volt power supply on HSPICE.
设计了一种采用粗转向技术的宽范围锁相环(PLL)电路,并在MOSIS 1.2 /spl mu/m CMOS技术中实现。整个锁相环电路已经进行了仿真,并且可以在HSPICE上使用3伏电源在160-440 MHz的频率范围内获得锁定。
{"title":"Wide operating-range acquisition technique for PLL circuits","authors":"Yi-Cheng Chang, E.W. Greeneich","doi":"10.1109/APASIC.1999.824098","DOIUrl":"https://doi.org/10.1109/APASIC.1999.824098","url":null,"abstract":"A wide range phase-locked loop (PLL) circuit using a coarse-steering technique is designed for implementation in MOSIS 1.2 /spl mu/m CMOS technology. The entire PLL circuit has been simulated and can obtain lock in over a frequency range of 160-440 MHz with a 3 volt power supply on HSPICE.","PeriodicalId":346808,"journal":{"name":"AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123533519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
期刊
AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1