Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225321
A. Bjorneklett, T. Tuhus, L. Halbo, H. Kristiansen
The thermomechanical stress in large silicon chips bonded to rigid substrates with adhesives is caused by the mismatch in thermal expansion between the silicon chip and the substrate. The stress induced during the chip attachment process was measured using integrated piezoresistive strain gauges on test chips. The stress was different between different adhesives. The effect of temperature cycling (i.e., stress cycling) was investigated by measuring the thermal resistance between chip and substrate. An increasing thermal resistance that strongly depends on the mismatch in thermal expansion was found. The wear-out mechanisms were crack growth and detachment.<>
{"title":"Thermal resistance, thermomechanical stress and thermal cycling endurance of silicon chips bonded with adhesives","authors":"A. Bjorneklett, T. Tuhus, L. Halbo, H. Kristiansen","doi":"10.1109/STHERM.1993.225321","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225321","url":null,"abstract":"The thermomechanical stress in large silicon chips bonded to rigid substrates with adhesives is caused by the mismatch in thermal expansion between the silicon chip and the substrate. The stress induced during the chip attachment process was measured using integrated piezoresistive strain gauges on test chips. The stress was different between different adhesives. The effect of temperature cycling (i.e., stress cycling) was investigated by measuring the thermal resistance between chip and substrate. An increasing thermal resistance that strongly depends on the mismatch in thermal expansion was found. The wear-out mechanisms were crack growth and detachment.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114999646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225326
B. Siegal
A methodology for the thermal characterization of surface mount devices (SMDs) is proposed. Measured data are shown only for the relative evaluation of various thermal test conditions and environments. Specific topics covered include the design of a suitable thermal test board; the mounting and orientation of the device for the thermal measurement in still and moving air environments; and collection, analysis and presentation of the data and detailed documentation of the test conditions and environment. The latter is especially important if the measurements are to be repeated by the SMD vendor or duplicated by the SMD user. The thermal test board design is discussed from the standpoint of existing standards and low-cost alternatives. The moving air environment, implemented with a variation of an industry standard design and designed to provide up to 1000 linear feet per minute capability, is discussed with the intent of establishing a new industry standard design.<>
{"title":"Thermal characterization of surface mount devices","authors":"B. Siegal","doi":"10.1109/STHERM.1993.225326","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225326","url":null,"abstract":"A methodology for the thermal characterization of surface mount devices (SMDs) is proposed. Measured data are shown only for the relative evaluation of various thermal test conditions and environments. Specific topics covered include the design of a suitable thermal test board; the mounting and orientation of the device for the thermal measurement in still and moving air environments; and collection, analysis and presentation of the data and detailed documentation of the test conditions and environment. The latter is especially important if the measurements are to be repeated by the SMD vendor or duplicated by the SMD user. The thermal test board design is discussed from the standpoint of existing standards and low-cost alternatives. The moving air environment, implemented with a variation of an industry standard design and designed to provide up to 1000 linear feet per minute capability, is discussed with the intent of establishing a new industry standard design.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126632910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225318
M. Ibrahim, L. Paradis
Under the microwave/millimeter-wave monolithic integrated circuit (MIMIC) Phase 1 DARPA sponsored development program, a comprehensive integrated finite element model of a transmitter module which is based on MMIC technology was developed and exercised. This model determined FET channel temperature sensitivity to system and/or chip level design variations. Module thermal measurements were taken during operation of a brassboard assembly, and the results were compared with the predictions. These showed excellent agreement, validating the model and the approach. The authors describe the tests and compare the experimental and analytical results.<>
{"title":"Correlation of experimental data with analytical predictions for GaAs FET in MMIC transmitter module in a subarray","authors":"M. Ibrahim, L. Paradis","doi":"10.1109/STHERM.1993.225318","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225318","url":null,"abstract":"Under the microwave/millimeter-wave monolithic integrated circuit (MIMIC) Phase 1 DARPA sponsored development program, a comprehensive integrated finite element model of a transmitter module which is based on MMIC technology was developed and exercised. This model determined FET channel temperature sensitivity to system and/or chip level design variations. Module thermal measurements were taken during operation of a brassboard assembly, and the results were compared with the predictions. These showed excellent agreement, validating the model and the approach. The authors describe the tests and compare the experimental and analytical results.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122293867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225323
S. O'Mathuna, T. Fromont, W. Koschnick, L. O'Connor
Details of four multichip module cooling techniques using common test chips and test methods in the ESPRIT Project 2075, APACHIP, are presented. The project is concerned with the development of technology and manufacturing capabilities for single-chip packages and multichip modules. Descriptions and test results of cooling techniques investigated for multichip modules are provided. These include heat-pipes, immersion in inert fluid, water-cooled thin membrane, and direct-chip on water-cooled cold plate. Two 12-mm/sup 2/ thermal test chips which have been developed (NMRC) for characterization of thermal demonstrators are described. Test systems established for diode temperature sensor calibration and thermal characterization of demonstrators are described and compared. Statistical errors amounted to less than +or-1%. Systematic errors are less than +or-10%.<>
{"title":"Test chips, test systems and thermal test data for multichip modules in the ESPRIT-APACHIP project","authors":"S. O'Mathuna, T. Fromont, W. Koschnick, L. O'Connor","doi":"10.1109/STHERM.1993.225323","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225323","url":null,"abstract":"Details of four multichip module cooling techniques using common test chips and test methods in the ESPRIT Project 2075, APACHIP, are presented. The project is concerned with the development of technology and manufacturing capabilities for single-chip packages and multichip modules. Descriptions and test results of cooling techniques investigated for multichip modules are provided. These include heat-pipes, immersion in inert fluid, water-cooled thin membrane, and direct-chip on water-cooled cold plate. Two 12-mm/sup 2/ thermal test chips which have been developed (NMRC) for characterization of thermal demonstrators are described. Test systems established for diode temperature sensor calibration and thermal characterization of demonstrators are described and compared. Statistical errors amounted to less than +or-1%. Systematic errors are less than +or-10%.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133810281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225319
J. Culham, S. Lee, M. Yovanovich
Natural convection cooling of large raised bodies attached to conductive substrates is studied analytically and compared with experimental results to ascertain the significance of conjugate heat transfer in applications related to microelectronic cooling. It is shown that good agreement between experimental data and simulated results, obtained using a model based on the boundary layer equations, is possible when heat transfer from a raised isothermal body is accounted for by reducing the thermal resistance between the heat source and the cooling fluid in proportion to the increase in wetted surface area. The importance of radiative heat transfer between the heated object and the surroundings is shown to be very important, especially in natural convection applications. The importance of using high conductivity copper lands as a means of lowering heat source temperatures is demonstrated for cube-on-board applications.<>
{"title":"Conjugate heat transfer from a raised isothermal heat source attached to a vertical board","authors":"J. Culham, S. Lee, M. Yovanovich","doi":"10.1109/STHERM.1993.225319","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225319","url":null,"abstract":"Natural convection cooling of large raised bodies attached to conductive substrates is studied analytically and compared with experimental results to ascertain the significance of conjugate heat transfer in applications related to microelectronic cooling. It is shown that good agreement between experimental data and simulated results, obtained using a model based on the boundary layer equations, is possible when heat transfer from a raised isothermal body is accounted for by reducing the thermal resistance between the heat source and the cooling fluid in proportion to the increase in wetted surface area. The importance of radiative heat transfer between the heated object and the surroundings is shown to be very important, especially in natural convection applications. The importance of using high conductivity copper lands as a means of lowering heat source temperatures is demonstrated for cube-on-board applications.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121299040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225325
B. Geeraerts, W. Van Petegem, W. Sansen
A diode matrix has been designed and processed in SBIMOS technology in order to obtain a better understanding on the static temperature distributions and transient thermal phenomena in the silicon. The diode matrix is shown to be the perfect tool for determining thermal constants and temperature distributions on chip. This information can be used to evaluate the electro-thermal simulator and to provide designers with more practical information in designing temperature critical ICs, resulting in smaller power ICs for the same performance. Temperature-related problems on chip such as offset voltage due to temperature gradients and maximum allowable temperature can be adequately modeled and hence calculated.<>
{"title":"A BIMOS diode matrix for the characterization of static and transient thermal phenomena on silicon","authors":"B. Geeraerts, W. Van Petegem, W. Sansen","doi":"10.1109/STHERM.1993.225325","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225325","url":null,"abstract":"A diode matrix has been designed and processed in SBIMOS technology in order to obtain a better understanding on the static temperature distributions and transient thermal phenomena in the silicon. The diode matrix is shown to be the perfect tool for determining thermal constants and temperature distributions on chip. This information can be used to evaluate the electro-thermal simulator and to provide designers with more practical information in designing temperature critical ICs, resulting in smaller power ICs for the same performance. Temperature-related problems on chip such as offset voltage due to temperature gradients and maximum allowable temperature can be adequately modeled and hence calculated.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116958741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225333
D. Disko, J. Durand
A method for measuring the case temperature of Am29000 while it is operating in a laser beam printer is described. The method involves using a portable data logging system with fine gauge thermocouples to collect the data and the use of statistical techniques to analyze the data. Potential pitfalls such as airflow effects, thermocouple attachment methods, software test cases and data correlation are addressed. Techniques for conversion of measured temperatures into power calculations are included along with data from three laser beam printers.<>
{"title":"Am29000 thermal evaluation in laser beam printer applications, in-system real-time measurements for ICC and power calculations","authors":"D. Disko, J. Durand","doi":"10.1109/STHERM.1993.225333","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225333","url":null,"abstract":"A method for measuring the case temperature of Am29000 while it is operating in a laser beam printer is described. The method involves using a portable data logging system with fine gauge thermocouples to collect the data and the use of statistical techniques to analyze the data. Potential pitfalls such as airflow effects, thermocouple attachment methods, software test cases and data correlation are addressed. Techniques for conversion of measured temperatures into power calculations are included along with data from three laser beam printers.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"42 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129154892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225315
N. Sakamoto, T. Kanai, K. Ohkawa
The structural characteristics of an insulated metal substrate based on aluminum (IMST) and a circuit assembly innovation by IMST (CAIT) mounting technology are discussed. It is shown that IMST has an excellent heat dissipation property, which provides the active and passive elements mounted on this substrate with a very low thermal resistance from them to the substrate. The hybrid IC based on this substrate enables the high density packaging of circuits including power semiconductors. The relationship between the structure and thermal resistance for each circuit component mounted on the IMST substrate is described.<>
{"title":"Thermal design and structure of thick film hybrid IC based on insulated aluminium substrate","authors":"N. Sakamoto, T. Kanai, K. Ohkawa","doi":"10.1109/STHERM.1993.225315","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225315","url":null,"abstract":"The structural characteristics of an insulated metal substrate based on aluminum (IMST) and a circuit assembly innovation by IMST (CAIT) mounting technology are discussed. It is shown that IMST has an excellent heat dissipation property, which provides the active and passive elements mounted on this substrate with a very low thermal resistance from them to the substrate. The hybrid IC based on this substrate enables the high density packaging of circuits including power semiconductors. The relationship between the structure and thermal resistance for each circuit component mounted on the IMST substrate is described.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131482091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225328
K.J. Arbeitman
Examines the sensitivity of ASTAP (Advanced Statistical Analysis Program) chip temperatures to model mesh size (node spacing) for flat cap single- and multichip modules and develops guidelines for mesh size selection which ensure a certain level of model accuracy without wasting resources with unnecessary model complication. Temperature output from models generated with the ASTAP model preprocessor (AMP) are first verified against the results from a finite-element modeling package. ASTAP chip temperatures as a function of node spacing are plotted. Optimum node spacing is determined as being where chip temperature variability decreases below the order of a user-defined value for all chips on a module. Guidelines are recommended for the most efficient mesh size selection as a function of module size, maximum chip power density, and maximum vertical chip attach 1D thermal resistances on the module.<>
{"title":"Temperature sensitivity to node spacing in ASTAP finite difference modelling for flat cap single- and multi-chip modules","authors":"K.J. Arbeitman","doi":"10.1109/STHERM.1993.225328","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225328","url":null,"abstract":"Examines the sensitivity of ASTAP (Advanced Statistical Analysis Program) chip temperatures to model mesh size (node spacing) for flat cap single- and multichip modules and develops guidelines for mesh size selection which ensure a certain level of model accuracy without wasting resources with unnecessary model complication. Temperature output from models generated with the ASTAP model preprocessor (AMP) are first verified against the results from a finite-element modeling package. ASTAP chip temperatures as a function of node spacing are plotted. Optimum node spacing is determined as being where chip temperature variability decreases below the order of a user-defined value for all chips on a module. Guidelines are recommended for the most efficient mesh size selection as a function of module size, maximum chip power density, and maximum vertical chip attach 1D thermal resistances on the module.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121220862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-02-02DOI: 10.1109/STHERM.1993.225332
A. Ortega, B. Lall, J. D. Chicci, M. Aghazadeh, B. Kiang
Experiments were performed to characterize the combined conduction, convection, and radiation heat transfer from a horizontal component board in a shallow horizontal enclosure. Measurements were made in both a simulated enclosure with well controlled thermal boundary conditions and an actual electronic enclosure. Comparison was made with simulated results using a commercial three dimensional conduction code with heat transfer coefficient boundary conditions and two simple one-dimensional models which ignore z-direction conduction in the board. The one-dimensional models compared well with the three-dimensional simulations. Agreement between experimental and simulation results was excellent. The results point out the importance of thermal radiation in the enclosure. The results show that the magnitude of the heat transfer coefficient used in the predictive model does not have to be known extremely accurately to predict maximum board temperatures with good accuracy.<>
{"title":"Heat transfer in a low aspect ratio horizontal enclosure for laptop computer application","authors":"A. Ortega, B. Lall, J. D. Chicci, M. Aghazadeh, B. Kiang","doi":"10.1109/STHERM.1993.225332","DOIUrl":"https://doi.org/10.1109/STHERM.1993.225332","url":null,"abstract":"Experiments were performed to characterize the combined conduction, convection, and radiation heat transfer from a horizontal component board in a shallow horizontal enclosure. Measurements were made in both a simulated enclosure with well controlled thermal boundary conditions and an actual electronic enclosure. Comparison was made with simulated results using a commercial three dimensional conduction code with heat transfer coefficient boundary conditions and two simple one-dimensional models which ignore z-direction conduction in the board. The one-dimensional models compared well with the three-dimensional simulations. Agreement between experimental and simulation results was excellent. The results point out the importance of thermal radiation in the enclosure. The results show that the magnitude of the heat transfer coefficient used in the predictive model does not have to be known extremely accurately to predict maximum board temperatures with good accuracy.<<ETX>>","PeriodicalId":369022,"journal":{"name":"[1993 Proceedings] Ninth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133319125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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