Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452567
Y. Park, W. Cho, Hyo Jin Kim
The impurities and heat affected zones (HAZ) in flexibl e organic light emitting diode (OLED) display films were measure d using Raman imaging and photoluminescence (PL). The flexible OLED display is a relatively thin, multi-layer structure of highly complex materials. A multi-layer film of polyethylene terephthala te (PET) and polyimide (PI) with an adhesive is a key component of flexible structures that replace rigid glass substrates. Recently, laser cutting is the most common method for the processing of mu lti-Iayer polymers. In this study, a confocal line imaging Raman microscope was operated at 532-nm and 785-nm, a max power of 500-mW, with 400 × 1340 pixels with a TE cooled CCD. A sample area of 80 μm x 80 μm can be measured within 5 min with 100 x magnification lens with a 1 sec exposure time at a resolution of 20 0nm pixels via line imaging technology. Raman imaging spectros copy and PL were performed to measure the HAZ and impurities at the surface as well as inside the multi-layer films. The most do minant impurities were carbon and adhesives which may have ori ginated from an adhesive layer between two polymer films. Impu rities near the laser cutting zone were identified as the thermal ch anges of PET and PI materials themselves by Raman imaging an d PL. The PL intensity increased as the thermal effect on PI and PET increased.
{"title":"Heat Affected Zone Analysis of Flexible OLED Display Film by Photoluminescence and Raman Imaging Microscopy","authors":"Y. Park, W. Cho, Hyo Jin Kim","doi":"10.1109/IPFA.2018.8452567","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452567","url":null,"abstract":"The impurities and heat affected zones (HAZ) in flexibl e organic light emitting diode (OLED) display films were measure d using Raman imaging and photoluminescence (PL). The flexible OLED display is a relatively thin, multi-layer structure of highly complex materials. A multi-layer film of polyethylene terephthala te (PET) and polyimide (PI) with an adhesive is a key component of flexible structures that replace rigid glass substrates. Recently, laser cutting is the most common method for the processing of mu lti-Iayer polymers. In this study, a confocal line imaging Raman microscope was operated at 532-nm and 785-nm, a max power of 500-mW, with 400 × 1340 pixels with a TE cooled CCD. A sample area of 80 μm x 80 μm can be measured within 5 min with 100 x magnification lens with a 1 sec exposure time at a resolution of 20 0nm pixels via line imaging technology. Raman imaging spectros copy and PL were performed to measure the HAZ and impurities at the surface as well as inside the multi-layer films. The most do minant impurities were carbon and adhesives which may have ori ginated from an adhesive layer between two polymer films. Impu rities near the laser cutting zone were identified as the thermal ch anges of PET and PI materials themselves by Raman imaging an d PL. The PL intensity increased as the thermal effect on PI and PET increased.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122967131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/ipfa.2018.8452568
Ching-Chun Lin, Kim Hsu
The facile way to improve the image contrast of light element such as porous low-k material in TEM while preventing the sample from electron radiation damage was provided. Several experimental parameters were conducted to examine the contrast of oxide layer and damage level of the low-K material, which were monitored by the shrinkage amount of the layer thickness. The improved result can be reproduced successfully by controlling the thickness of the TEM lamella.
{"title":"Cost and Effective Way to Reduce Radiation Damage and Enhance Image Contrast of Beam Sensitive Materials in TEM","authors":"Ching-Chun Lin, Kim Hsu","doi":"10.1109/ipfa.2018.8452568","DOIUrl":"https://doi.org/10.1109/ipfa.2018.8452568","url":null,"abstract":"The facile way to improve the image contrast of light element such as porous low-k material in TEM while preventing the sample from electron radiation damage was provided. Several experimental parameters were conducted to examine the contrast of oxide layer and damage level of the low-K material, which were monitored by the shrinkage amount of the layer thickness. The improved result can be reproduced successfully by controlling the thickness of the TEM lamella.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"993 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116225076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452539
Sharon Lee, L. Khoo, Lihong Li, P. Ang, Z. Mo
In this paper, the failure mechanisms of a CMOS+MEMS device with low frequency failure and seal ring short failure have been investigated. This CMOS+MEMS device consists of a CMOS chip bonded onto a MEMS piezoelectric sensor chip, with a MEMS cap sealing the vacuum in the cavities between the MEMS and CMOS chips. Due to the complexity of the MEMS device and the restricted information on the failed units available from our customer, limited tests and diagnostic analyses can be done at our site. This paper shares how our methodology approach on leveraging on our existing FA tools and techniques, using dry and wet etching, optical and SEM microscopy, as well as FIB milling helped us determine the failure mechanisms. With this method, we managed to conclude that the low frequency failure of this device was due to insufficient eutectic bond force and the seal ring short failure was a result of excessive bonding force at the MEMS to CMOS seal rings.
{"title":"Sample Preparation Methodology for a CMOS+MEMS Device with Low Frequency and Seal Ring Short Failures","authors":"Sharon Lee, L. Khoo, Lihong Li, P. Ang, Z. Mo","doi":"10.1109/IPFA.2018.8452539","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452539","url":null,"abstract":"In this paper, the failure mechanisms of a CMOS+MEMS device with low frequency failure and seal ring short failure have been investigated. This CMOS+MEMS device consists of a CMOS chip bonded onto a MEMS piezoelectric sensor chip, with a MEMS cap sealing the vacuum in the cavities between the MEMS and CMOS chips. Due to the complexity of the MEMS device and the restricted information on the failed units available from our customer, limited tests and diagnostic analyses can be done at our site. This paper shares how our methodology approach on leveraging on our existing FA tools and techniques, using dry and wet etching, optical and SEM microscopy, as well as FIB milling helped us determine the failure mechanisms. With this method, we managed to conclude that the low frequency failure of this device was due to insufficient eutectic bond force and the seal ring short failure was a result of excessive bonding force at the MEMS to CMOS seal rings.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116531650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452613
G. Pascual, Cathy Lee, J. P. Pineda, Byong Kim, Keibock Lee
The coupling between an electrical and mechanical response in a material is a fundamental property that provides functionality to a variety of applications ranging from sensors and actuators to energy harvesting and biology. Most materials exhibit electromechanical coupling in nanometer-sized domains. Therefore, to understand the relationship between structure and function of these materials, characterization on the nanoscale is required. This property can be directly measured in a non-destructive manner using piezoelectric force microscopy (PFM), a mode that comes standard in all atomic force microscopes (AFMs) from Park Systems. Additionally, PFM can be used as a spectroscopic tool to evaluate switching of piezoelectric domains. Here we demonstrate the utility of PFM for failure analysis of a multilayered ceramic capacitor. Correlative imaging of topography and electrical signals revealed discontinuous structures in the device that likely had a direct effect on device performance. Spectroscopy was also performed at a specific piezoelectric region to measure domain properties, such as the electric field required to flip the polarization direction (coercive voltage).
{"title":"Characterization of Multilayered Ceramic Capacitors via Piezoelectric Force Microscopy","authors":"G. Pascual, Cathy Lee, J. P. Pineda, Byong Kim, Keibock Lee","doi":"10.1109/IPFA.2018.8452613","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452613","url":null,"abstract":"The coupling between an electrical and mechanical response in a material is a fundamental property that provides functionality to a variety of applications ranging from sensors and actuators to energy harvesting and biology. Most materials exhibit electromechanical coupling in nanometer-sized domains. Therefore, to understand the relationship between structure and function of these materials, characterization on the nanoscale is required. This property can be directly measured in a non-destructive manner using piezoelectric force microscopy (PFM), a mode that comes standard in all atomic force microscopes (AFMs) from Park Systems. Additionally, PFM can be used as a spectroscopic tool to evaluate switching of piezoelectric domains. Here we demonstrate the utility of PFM for failure analysis of a multilayered ceramic capacitor. Correlative imaging of topography and electrical signals revealed discontinuous structures in the device that likely had a direct effect on device performance. Spectroscopy was also performed at a specific piezoelectric region to measure domain properties, such as the electric field required to flip the polarization direction (coercive voltage).","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123783554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452518
T. C. Wei, V. Narang, A. Thean
In this work, we present the electrical characterization of various Front-End-Of-Line (FEOL) bridge defects location using Technology Computer Aided Design (TCAD) based simulation. The electrical characteristics obtained from simulation is useful in identifying the possible locations of the bridge defects. The simulation result correlates well with nano-probing result collected on actual failing devices. Furthermore, simulation of potential defects provides a quick way of understanding how the defect may influence the electrical behavior of transistors.
{"title":"Electrical Characterization of FEOL Bridge Defects in Advanced Nanoscale Devices Using TCAD Simulations","authors":"T. C. Wei, V. Narang, A. Thean","doi":"10.1109/IPFA.2018.8452518","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452518","url":null,"abstract":"In this work, we present the electrical characterization of various Front-End-Of-Line (FEOL) bridge defects location using Technology Computer Aided Design (TCAD) based simulation. The electrical characteristics obtained from simulation is useful in identifying the possible locations of the bridge defects. The simulation result correlates well with nano-probing result collected on actual failing devices. Furthermore, simulation of potential defects provides a quick way of understanding how the defect may influence the electrical behavior of transistors.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130682258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452566
Ong Pei Hoon, N. Kay, Gwee Hoon Yen
Exposing the die backside is an important step in backside analysis. One of the most common techniques used is chemical preparation. However, the drawback of this technique for small non-exposed die pad package is that the copper lead will over etch by the 65% Acid Nitric Fuming if the device is not proper sealed with 3M High Temperature Tape. As a result, not able to proceed to further electrical measurements In view of this the mechanical decapsulation is an alternative solution to the existing procedure on the non-exposed die pad backside preparation. The end result of this technique is that the copper lead is intact and electrical measurement can be performed to improve the effectiveness and accuracy of physical failure analysis.
{"title":"Sample Preparation on Backside Mechanical Decapsulation Methodology for Effective Failure Analysis on Non-Exposed Die Pad Package","authors":"Ong Pei Hoon, N. Kay, Gwee Hoon Yen","doi":"10.1109/IPFA.2018.8452566","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452566","url":null,"abstract":"Exposing the die backside is an important step in backside analysis. One of the most common techniques used is chemical preparation. However, the drawback of this technique for small non-exposed die pad package is that the copper lead will over etch by the 65% Acid Nitric Fuming if the device is not proper sealed with 3M High Temperature Tape. As a result, not able to proceed to further electrical measurements In view of this the mechanical decapsulation is an alternative solution to the existing procedure on the non-exposed die pad backside preparation. The end result of this technique is that the copper lead is intact and electrical measurement can be performed to improve the effectiveness and accuracy of physical failure analysis.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130321463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452495
T. Tsuchiya, M. Hori, Y. Ono
We carried out detection and characterization of single Si/SiO2near-interface oxide-traps (NIOTs) using the systematic measurements procedure by the high-resolution charge pumping (CP) method we developed, and we found a single NIOT where CP current depends upon both fall and rise times of the CP gate pulse. This demonstrates that individual Si/SiO2NIOTs have two energy levels, one in the upper part, the other in the lower part of the silicon bandgap. The results may suggest that the NIOTs also have an amphoteric nature, i.e., have both donor-like one-electron, and acceptor-like two-electrons states, similar to the Si/SiO2interface traps.
{"title":"Detection and Characterization of Single Near-Interface Oxide Traps with the Charge Pumping Method","authors":"T. Tsuchiya, M. Hori, Y. Ono","doi":"10.1109/IPFA.2018.8452495","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452495","url":null,"abstract":"We carried out detection and characterization of single Si/SiO2near-interface oxide-traps (NIOTs) using the systematic measurements procedure by the high-resolution charge pumping (CP) method we developed, and we found a single NIOT where CP current depends upon both fall and rise times of the CP gate pulse. This demonstrates that individual Si/SiO2NIOTs have two energy levels, one in the upper part, the other in the lower part of the silicon bandgap. The results may suggest that the NIOTs also have an amphoteric nature, i.e., have both donor-like one-electron, and acceptor-like two-electrons states, similar to the Si/SiO2interface traps.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133599030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Conventional backside sample preparation for repackaged Ball Grid Array (BGA) product is time consuming and damaging the device easily. A new backside sample preparation method for repackaged BGA sample is demonstrated to improve the throughput time (TpT) and success rate of backside sample preparation.
{"title":"Case Study for Backside Sample Preparation in Copper Based Dummy Package","authors":"Hao Yu, Horng-Chang Liu, Chaohua Huang, Shou-Ming Huang","doi":"10.1109/IPFA.2018.8452527","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452527","url":null,"abstract":"Conventional backside sample preparation for repackaged Ball Grid Array (BGA) product is time consuming and damaging the device easily. A new backside sample preparation method for repackaged BGA sample is demonstrated to improve the throughput time (TpT) and success rate of backside sample preparation.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134177644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452484
Hongyuan Su, Lulu Wang, F. Zhao, Lixin Wang, Jiajun Luo
Inhomogeneous current distribution in IGBT modules exists as an inevitable and critical problem for a long time, which brings great risks during applications. Currently, no non-destructive methods exists to evaluate inhomogeneous current distribution in IGBT modules. A novel electrical evaluation approach is proposed in this paper. The proposed approach creatively applies the excessive thermotaxis effect of low currents for IGBT modules, and makes use of several IGBT characteristics to design a set of test circuits and methods to capture, enhance and finally evaluate the non-uniform property of the transient current distribution of IGBT modules
{"title":"A Novel Electrical Evaluation Approach for Inhomogeneous Current Distribution in Parallel-Connected IGBT Modules","authors":"Hongyuan Su, Lulu Wang, F. Zhao, Lixin Wang, Jiajun Luo","doi":"10.1109/IPFA.2018.8452484","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452484","url":null,"abstract":"Inhomogeneous current distribution in IGBT modules exists as an inevitable and critical problem for a long time, which brings great risks during applications. Currently, no non-destructive methods exists to evaluate inhomogeneous current distribution in IGBT modules. A novel electrical evaluation approach is proposed in this paper. The proposed approach creatively applies the excessive thermotaxis effect of low currents for IGBT modules, and makes use of several IGBT characteristics to design a set of test circuits and methods to capture, enhance and finally evaluate the non-uniform property of the transient current distribution of IGBT modules","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134427323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/IPFA.2018.8452581
Xuanlong Chen, Lan Chen, Youliang Wang, D. Luo, Jintao Chen, Binruo Zhu
Electrochemical migration (ECM) of metal has been studied for decades, including Ag, Ni, Sn, Pb, Cu and Au. These metal materials are commonly used in microelectronics devices, both in package and die. According to the failure mechanisms, some of the root causes are easy to find out except Au, since contaminant element is hard to be detected, and electrolyte is various besides water. In a real failure analysis case, we developed a method to analysis contaminant and alcohol induced ECM of Au bond by combining ion chromatography and TOF-SIMS characterization, and IVA analysis. Based on the coupled analysis, the origin of Au ECM is related to chlorine ions and dominant electrolyte formed in low temperature (-45°C) is alcohol. These results indicate alcohol control in microcircuit plays an important role in sealed package.
{"title":"Contaminant and Alcohol Induced Electrochemical Migration of Au Bond in ICs During Low Temperature Operation Test","authors":"Xuanlong Chen, Lan Chen, Youliang Wang, D. Luo, Jintao Chen, Binruo Zhu","doi":"10.1109/IPFA.2018.8452581","DOIUrl":"https://doi.org/10.1109/IPFA.2018.8452581","url":null,"abstract":"Electrochemical migration (ECM) of metal has been studied for decades, including Ag, Ni, Sn, Pb, Cu and Au. These metal materials are commonly used in microelectronics devices, both in package and die. According to the failure mechanisms, some of the root causes are easy to find out except Au, since contaminant element is hard to be detected, and electrolyte is various besides water. In a real failure analysis case, we developed a method to analysis contaminant and alcohol induced ECM of Au bond by combining ion chromatography and TOF-SIMS characterization, and IVA analysis. Based on the coupled analysis, the origin of Au ECM is related to chlorine ions and dominant electrolyte formed in low temperature (-45°C) is alcohol. These results indicate alcohol control in microcircuit plays an important role in sealed package.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131337392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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