The properties of hydrogenated amorphous silicon carbide films prepared by plasma enhanced chemical vapour deposition were studied by combination of infrared (IR), RBS, ERD (elastic recoil detection) measurement. IR result shoved the presence Si-C, Si-H, C-H bonds. The compositions of the silicon, carbon and hydrogen in the films were found to be dependent on the preparation conditions.
{"title":"Properties of amorphous SiC thin films prepared by plasma enhanced chemical vapour deposition","authors":"J. Huran, A. Kobzev, J. Šafránková, I. Hotovy","doi":"10.1109/SIM.1996.571090","DOIUrl":"https://doi.org/10.1109/SIM.1996.571090","url":null,"abstract":"The properties of hydrogenated amorphous silicon carbide films prepared by plasma enhanced chemical vapour deposition were studied by combination of infrared (IR), RBS, ERD (elastic recoil detection) measurement. IR result shoved the presence Si-C, Si-H, C-H bonds. The compositions of the silicon, carbon and hydrogen in the films were found to be dependent on the preparation conditions.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131992022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Castaldini, A. Cavallini, L. Polenta, C. Canali, C. del Papa, F. Nava
Ohmic contacts play an important role in the performance of LEC gallium arsenide particle detectors since they possibly control the injection of charge carriers. Contact characteristics have been compared and related to electrically active defects induced during contact preparation and to the detector efficiency. The electric field distribution has also been analyzed. Spectroscopic investigations have put into evidence that the contact fabrication process significantly influences the trap density whilst it does not change their signatures.
{"title":"Trap influence on the performance of gallium arsenide radiation detectors","authors":"A. Castaldini, A. Cavallini, L. Polenta, C. Canali, C. del Papa, F. Nava","doi":"10.1109/SIM.1996.571120","DOIUrl":"https://doi.org/10.1109/SIM.1996.571120","url":null,"abstract":"Ohmic contacts play an important role in the performance of LEC gallium arsenide particle detectors since they possibly control the injection of charge carriers. Contact characteristics have been compared and related to electrically active defects induced during contact preparation and to the detector efficiency. The electric field distribution has also been analyzed. Spectroscopic investigations have put into evidence that the contact fabrication process significantly influences the trap density whilst it does not change their signatures.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128888763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Zou, Z.G. Wang, D. Sun, T. Fan, X.F. Liu, J.W. Zhang
Rapid thermal annealing of ion implanted arsenic in relaxed Si/sub 1-x/Ge/sub x/ (x=0.90/spl sim/0.43) epilayers was studied and compared to diffusion in Si. Sample analysis included depth profiling by secondary-ion-mass spectroscopy, and electrical characterization employing spreading resistance probe measurement. Arsenic chemical concentration profiles indicated that the behavior of implanted As in Si/sub 1-x/Ge/sub x/ after RTA was different from that in Si, and the Si/sub 1-x/Ge/sub x/ samples with the higher x exhibited box-shaped, concentration-dependent diffusion profiles. The maximum concentrations of electrically active arsenic in Si/sub 0.57/Ge/sub 0.43/ were found to be 3.0/spl times/10/sup 19/ and 4.2/spl times/10/sup 19/ cm/sup -3/ for 18 second anneals at 950/spl deg/C and 1050/spl deg/C, respectively, which is about one order of magnitude lower than the arsenic equilibrium solubility limit for arsenic-implanted Si.
{"title":"Comparison of arsenic diffusion in Si and Si/sub 1-x/Ge/sub x/ epilayers","authors":"L. Zou, Z.G. Wang, D. Sun, T. Fan, X.F. Liu, J.W. Zhang","doi":"10.1109/SIM.1996.570941","DOIUrl":"https://doi.org/10.1109/SIM.1996.570941","url":null,"abstract":"Rapid thermal annealing of ion implanted arsenic in relaxed Si/sub 1-x/Ge/sub x/ (x=0.90/spl sim/0.43) epilayers was studied and compared to diffusion in Si. Sample analysis included depth profiling by secondary-ion-mass spectroscopy, and electrical characterization employing spreading resistance probe measurement. Arsenic chemical concentration profiles indicated that the behavior of implanted As in Si/sub 1-x/Ge/sub x/ after RTA was different from that in Si, and the Si/sub 1-x/Ge/sub x/ samples with the higher x exhibited box-shaped, concentration-dependent diffusion profiles. The maximum concentrations of electrically active arsenic in Si/sub 0.57/Ge/sub 0.43/ were found to be 3.0/spl times/10/sup 19/ and 4.2/spl times/10/sup 19/ cm/sup -3/ for 18 second anneals at 950/spl deg/C and 1050/spl deg/C, respectively, which is about one order of magnitude lower than the arsenic equilibrium solubility limit for arsenic-implanted Si.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124436918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The influence of non-stoichiometry on the solid-phase epitaxial growth of amorphized GaAs has been studied with in-situ Transmission Electron Microscopy (TEM). Ion-implantation has been used to produce microscopic non-stoichiometry via Ga and As implants and macroscopic non-stoichiometry via Ga or As implants. It has been demonstrated that amorphous GaAs recrystallizes into a thin single-crystal layer and a thick heavily twinned layer when annealed at /spl sim/260/spl deg/C. Video images of the recrystallization process have been quantified for the first time to study the velocity of the crystalline/amorphous (c/a)-interface as a function of depth and ion species. Regrowth rates of the single crystal and twinned layers as functions of non-stoichiometry have been measured. The phase transformation is rapid in Ga-rich material. In-situ TEM results are consistent with conventional in-situ Time Resolved Reflectivity, ex-situ Rutherford Backscattering Spectroscopy and Channeling measurements and ex-situ TEM.
{"title":"Investigation of the solid-phase epitaxial growth of amorphized GaAs with in-situ and ex-situ electron microscopy","authors":"K. Belay, M. Ridgway, D. Llewellyn","doi":"10.1109/SIM.1996.570875","DOIUrl":"https://doi.org/10.1109/SIM.1996.570875","url":null,"abstract":"The influence of non-stoichiometry on the solid-phase epitaxial growth of amorphized GaAs has been studied with in-situ Transmission Electron Microscopy (TEM). Ion-implantation has been used to produce microscopic non-stoichiometry via Ga and As implants and macroscopic non-stoichiometry via Ga or As implants. It has been demonstrated that amorphous GaAs recrystallizes into a thin single-crystal layer and a thick heavily twinned layer when annealed at /spl sim/260/spl deg/C. Video images of the recrystallization process have been quantified for the first time to study the velocity of the crystalline/amorphous (c/a)-interface as a function of depth and ion species. Regrowth rates of the single crystal and twinned layers as functions of non-stoichiometry have been measured. The phase transformation is rapid in Ga-rich material. In-situ TEM results are consistent with conventional in-situ Time Resolved Reflectivity, ex-situ Rutherford Backscattering Spectroscopy and Channeling measurements and ex-situ TEM.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114988935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Liliental-Weber, M. Li, G.S. Li, C. Chang-Hasnain, E. Weber
Transmission electron microscopy was used for the characterization of microstructure of wet oxidation of AlAs. Dense cubic /spl gamma/-Al/sub 2/O/sub 3/ was formed with a substantial shrinking after oxidation. Addition of a small amount of Ga (x=0.1) increased granularity of the oxide. Large pores were formed at the interface between the oxide and the low Al content layer. Arsenic accumulation near these pores, the interface, as well at the layer surface was found after oxidation. This study showed that properties of this oxide might be enhanced by the properties of GaAs rich in As (similar to low-temperature-grown-GaAs).
{"title":"Transmission electron microscopy of Al-rich III-V oxides","authors":"Z. Liliental-Weber, M. Li, G.S. Li, C. Chang-Hasnain, E. Weber","doi":"10.1109/SIM.1996.570930","DOIUrl":"https://doi.org/10.1109/SIM.1996.570930","url":null,"abstract":"Transmission electron microscopy was used for the characterization of microstructure of wet oxidation of AlAs. Dense cubic /spl gamma/-Al/sub 2/O/sub 3/ was formed with a substantial shrinking after oxidation. Addition of a small amount of Ga (x=0.1) increased granularity of the oxide. Large pores were formed at the interface between the oxide and the low Al content layer. Arsenic accumulation near these pores, the interface, as well at the layer surface was found after oxidation. This study showed that properties of this oxide might be enhanced by the properties of GaAs rich in As (similar to low-temperature-grown-GaAs).","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116860142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Rogalla, J. W. Chen, R. Geppert, R. Göppert, M. Kienzle, R. Irsigler, J. Ludwig, K. Runge, D. G. Ebling, T. Schmid, X. Liu, J. Kruger, Eicke R. Weber
GaAs Schottky diodes made by commercial undoped semi-insulating (SI) material have been shown to work well as radiation detectors. This material offers high radiation resistance together with high charge carrier mobility, good signal-to-noise ratio and a good detection efficiency for minimum ionizing particles. To optimise the detector performance of Schottky diodes made on SI-GaAs, the influence of the compensation on the formation of the space charge region and charge collection efficiency (CCE) for alpha particles was studied. A strong dependence of the CCE on the ionized state of the arsenic antisite defect As/sub Ga//sup +/ and the resistivity determined from the Norde plot was observed. Also the influence of the compensation on the Schottky barrier height and space charge density can been seen.
{"title":"Influence of the compensation in semi-insulating GaAs on the particle detector performance","authors":"M. Rogalla, J. W. Chen, R. Geppert, R. Göppert, M. Kienzle, R. Irsigler, J. Ludwig, K. Runge, D. G. Ebling, T. Schmid, X. Liu, J. Kruger, Eicke R. Weber","doi":"10.1109/SIM.1996.571119","DOIUrl":"https://doi.org/10.1109/SIM.1996.571119","url":null,"abstract":"GaAs Schottky diodes made by commercial undoped semi-insulating (SI) material have been shown to work well as radiation detectors. This material offers high radiation resistance together with high charge carrier mobility, good signal-to-noise ratio and a good detection efficiency for minimum ionizing particles. To optimise the detector performance of Schottky diodes made on SI-GaAs, the influence of the compensation on the formation of the space charge region and charge collection efficiency (CCE) for alpha particles was studied. A strong dependence of the CCE on the ionized state of the arsenic antisite defect As/sub Ga//sup +/ and the resistivity determined from the Norde plot was observed. Also the influence of the compensation on the Schottky barrier height and space charge density can been seen.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124053200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Marsal, J. Pallarès, X. Correig, L. Calvo‐Barrio, M. Domínguez, D. Bardes, J. Calderer, R. Alcubilla
Results on amorphous and microcrystalline silicon carbon alloy layers obtained by plasma enhanced chemical vapor deposition are reported. The investigations are focused on the deposition rate and carbon content for different deposition conditions. In order to assess the applicability of silicon carbon alloys films, heterojunctions of amorphous-SiC:H/crystalline Si (a-SiC:H/c-Si) and microcrystalline-SiC:H/crystalline Si (/spl mu/c-SiC:H/c-Si) diodes were fabricated and their current-voltage characteristics were compared. The obtained results indicate that the /spl mu/c-SiC:H/c-Si heterojunction presents electrical properties suitable for heterojunction bipolar transistor fabrication.
{"title":"Study and fabrication of amorphous and microcrystalline silicon-carbon alloys for microelectronic applications","authors":"L. Marsal, J. Pallarès, X. Correig, L. Calvo‐Barrio, M. Domínguez, D. Bardes, J. Calderer, R. Alcubilla","doi":"10.1109/SIM.1996.570939","DOIUrl":"https://doi.org/10.1109/SIM.1996.570939","url":null,"abstract":"Results on amorphous and microcrystalline silicon carbon alloy layers obtained by plasma enhanced chemical vapor deposition are reported. The investigations are focused on the deposition rate and carbon content for different deposition conditions. In order to assess the applicability of silicon carbon alloys films, heterojunctions of amorphous-SiC:H/crystalline Si (a-SiC:H/c-Si) and microcrystalline-SiC:H/crystalline Si (/spl mu/c-SiC:H/c-Si) diodes were fabricated and their current-voltage characteristics were compared. The obtained results indicate that the /spl mu/c-SiC:H/c-Si heterojunction presents electrical properties suitable for heterojunction bipolar transistor fabrication.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124765004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Luysberg, H. Sohn, A. Prasad, H. Fujioka, R. Klockenbrink, E. Weber
MBE grown GaAs deposited at low temperatures (LT-GaAs) has already found industrial use as passive buffer layer or gate isolation layer in FETs and as active layer in THz photodetectors. Although LT-GaAs was extensively studied in the past, the role of stoichiometry dependent defects governing the unique properties is not yet fully understood. This study describes the systematic variation of the growth parameters, i.e. growth temperature and As/Ga flux ratio, to control the point defect concentrations. The lattice mismatch between the LT-GaAs layers and the GaAs substrates, which is caused by the incorporation of excess As, decreases with increasing growth temperature and with decreasing As/Ga flux ratio, A linear correlation of the arsenic antisite concentration As/sub Ga/ with the lattice constant is observed. A well defined As/sub Ga/ concentration can be established either by varying the growth temperature or by choosing a certain As/Ga flux ratio, After annealing at 600/spl deg/C all samples exhibit a high electrical resistivity. A single activated behavior with activation energies typical for band conductivity is observed in temperature dependent measurements of the conductivity of n-i-n structures. However, the energy barrier decreases with higher growth temperatures.
{"title":"Control of stoichiometry dependent defects in low temperature GaAs","authors":"M. Luysberg, H. Sohn, A. Prasad, H. Fujioka, R. Klockenbrink, E. Weber","doi":"10.1109/SIM.1996.570869","DOIUrl":"https://doi.org/10.1109/SIM.1996.570869","url":null,"abstract":"MBE grown GaAs deposited at low temperatures (LT-GaAs) has already found industrial use as passive buffer layer or gate isolation layer in FETs and as active layer in THz photodetectors. Although LT-GaAs was extensively studied in the past, the role of stoichiometry dependent defects governing the unique properties is not yet fully understood. This study describes the systematic variation of the growth parameters, i.e. growth temperature and As/Ga flux ratio, to control the point defect concentrations. The lattice mismatch between the LT-GaAs layers and the GaAs substrates, which is caused by the incorporation of excess As, decreases with increasing growth temperature and with decreasing As/Ga flux ratio, A linear correlation of the arsenic antisite concentration As/sub Ga/ with the lattice constant is observed. A well defined As/sub Ga/ concentration can be established either by varying the growth temperature or by choosing a certain As/Ga flux ratio, After annealing at 600/spl deg/C all samples exhibit a high electrical resistivity. A single activated behavior with activation energies typical for band conductivity is observed in temperature dependent measurements of the conductivity of n-i-n structures. However, the energy barrier decreases with higher growth temperatures.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129978223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Aubry-Fortuna, M. Mamor, F. Meyer, S. Bodnar, J. Regolini
In previous studies, we have investigated the Schottky barrier height of tungsten (W) on p-type and n-type Si/sub 1-x/Ge/sub x//Si as a function of Ge-content (0/spl les/x/spl les/33%) and Si/sub 1-x/Ge/sub x/ thickness for a given composition. The barrier height to n-type does not vary significantly while that to p-type follows the same trends as the band-gap: it decreases with x and the strain. In this study, we have extended our measurements to the ternary alloy Si/sub 1-x-y/Ge/sub x/C/sub y/ and to the binary alloy Si/sub 1-y/C/sub y/. The behavior of the barrier height W/Si/sub 1-x-y/Ge/sub x/C/sub y/ is similar to that of W/Si/sub 1-x/Ge/sub x/: for p-type, it increases with the strain relaxation induced by the incorporation of C while it remains constant for n-type. On the other hand, results on W/Si/sub 1-y/C/sub y/ are quite different, suggesting a change in the Fermi level pinning position.
{"title":"Schottky diodes on Si/sub 1-x/Ge/sub x/, Si/sub 1-x-y/Ge/sub x/C/sub y/ and Si/sub 1-y/C/sub y/ alloys","authors":"V. Aubry-Fortuna, M. Mamor, F. Meyer, S. Bodnar, J. Regolini","doi":"10.1109/SIM.1996.571083","DOIUrl":"https://doi.org/10.1109/SIM.1996.571083","url":null,"abstract":"In previous studies, we have investigated the Schottky barrier height of tungsten (W) on p-type and n-type Si/sub 1-x/Ge/sub x//Si as a function of Ge-content (0/spl les/x/spl les/33%) and Si/sub 1-x/Ge/sub x/ thickness for a given composition. The barrier height to n-type does not vary significantly while that to p-type follows the same trends as the band-gap: it decreases with x and the strain. In this study, we have extended our measurements to the ternary alloy Si/sub 1-x-y/Ge/sub x/C/sub y/ and to the binary alloy Si/sub 1-y/C/sub y/. The behavior of the barrier height W/Si/sub 1-x-y/Ge/sub x/C/sub y/ is similar to that of W/Si/sub 1-x/Ge/sub x/: for p-type, it increases with the strain relaxation induced by the incorporation of C while it remains constant for n-type. On the other hand, results on W/Si/sub 1-y/C/sub y/ are quite different, suggesting a change in the Fermi level pinning position.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131070237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An analytical model for super low-noise InAlAs/InGaAs/InAlAs/InP HEMTs is presented. The carriers are well confined in the quantum well formed in InGaAs due to the large conduction band discontinuities (/spl Delta/EC) at the InAlAs/InGaAs and InGaAs/InAlAs heterointerfaces. Moreover, a smaller electron effective mass in InGaAs results in a higher device transconductance g/sub m/ and lower noise figure NF. The noise figure of InP based HEMTs is much lower than that of GaAs based pseudomorphic or normal HEMTs. The present model is based on a self-consistent solution of Schroedinger and Poisson's equations to calculate the properties of the quantum well formed in InGaAs, namely the average distance of two-dimensional electron gas (2DEG), x/sub av/, and the position of Fermi level, E/sub F/, as a function of 2DEG concentration n/sub s/. Instead of using a two-line or an exponential approximation, an improved velocity electric field (v/sub d/-E) characteristic is used to calculate the current-voltage (I-V) characteristics, small-signal parameters and noise performance analytically. Based on the model developed by Liu and Anwar et al., g/sub m/ is calculated and the result shows an excellent agreement with experimental data. The present model yields a minimum noise figure, F/sub min/, of 0.8 and 1.2 dB at 60 and 94 GHz, respectively, which well fit to the experimental data. The noise performance of this class of devices with different gate lengths is studied in the present model.
{"title":"An analytical noise evaluation for super low-noise InAlAs/InGaAs/InAlAs/InP HEMTs","authors":"Kuo-Wei Liu, A. Anwar, Chia-Jen Wu","doi":"10.1109/SIM.1996.571121","DOIUrl":"https://doi.org/10.1109/SIM.1996.571121","url":null,"abstract":"An analytical model for super low-noise InAlAs/InGaAs/InAlAs/InP HEMTs is presented. The carriers are well confined in the quantum well formed in InGaAs due to the large conduction band discontinuities (/spl Delta/EC) at the InAlAs/InGaAs and InGaAs/InAlAs heterointerfaces. Moreover, a smaller electron effective mass in InGaAs results in a higher device transconductance g/sub m/ and lower noise figure NF. The noise figure of InP based HEMTs is much lower than that of GaAs based pseudomorphic or normal HEMTs. The present model is based on a self-consistent solution of Schroedinger and Poisson's equations to calculate the properties of the quantum well formed in InGaAs, namely the average distance of two-dimensional electron gas (2DEG), x/sub av/, and the position of Fermi level, E/sub F/, as a function of 2DEG concentration n/sub s/. Instead of using a two-line or an exponential approximation, an improved velocity electric field (v/sub d/-E) characteristic is used to calculate the current-voltage (I-V) characteristics, small-signal parameters and noise performance analytically. Based on the model developed by Liu and Anwar et al., g/sub m/ is calculated and the result shows an excellent agreement with experimental data. The present model yields a minimum noise figure, F/sub min/, of 0.8 and 1.2 dB at 60 and 94 GHz, respectively, which well fit to the experimental data. The noise performance of this class of devices with different gate lengths is studied in the present model.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133987836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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