Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919437
Ricardo T. Silvares Junior, D. Micha
The multijunction solar cell concept has proven to be a very efficient way of converting solar into electrical energy. Theoretical calculations using the detailed balance model aim in the optimization process of finding the best materials (in terms of bandgap energies) to compose the device junctions. However, along with other simplifications, such model applied to multijunction solar cells fails in considering one important physical effect: the luminescence coupling amongst the junctions. In this work, we present a method based on a self-consistent numerical approach for implementing the luminescence coupling in the detailed balance model applied to multijunction solar cells. We show results on the influence of the effect on the performance of different dual junction solar cells in which a coupling factor and the junction bandgap energies are varied. Therefore, we show that the main impact of the luminescence coupling is in the raise of the solar cell short circuit current, and consequently, their conversion efficiencies. Moreover, we highlight that the influence of the effect is more important for the bandgap energy combinations that would lead to low efficiencies. This is an important result towards the choice of materials by allowing more combinations to achieve high efficiencies.
{"title":"Study on the Influence of the Luminescence Coupling in Dual Junction Solar Cells","authors":"Ricardo T. Silvares Junior, D. Micha","doi":"10.1109/SBMicro.2019.8919437","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919437","url":null,"abstract":"The multijunction solar cell concept has proven to be a very efficient way of converting solar into electrical energy. Theoretical calculations using the detailed balance model aim in the optimization process of finding the best materials (in terms of bandgap energies) to compose the device junctions. However, along with other simplifications, such model applied to multijunction solar cells fails in considering one important physical effect: the luminescence coupling amongst the junctions. In this work, we present a method based on a self-consistent numerical approach for implementing the luminescence coupling in the detailed balance model applied to multijunction solar cells. We show results on the influence of the effect on the performance of different dual junction solar cells in which a coupling factor and the junction bandgap energies are varied. Therefore, we show that the main impact of the luminescence coupling is in the raise of the solar cell short circuit current, and consequently, their conversion efficiencies. Moreover, we highlight that the influence of the effect is more important for the bandgap energy combinations that would lead to low efficiencies. This is an important result towards the choice of materials by allowing more combinations to achieve high efficiencies.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132071711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/sbmicro.2019.8919267
{"title":"SBMicro 2019 Program Committee","authors":"","doi":"10.1109/sbmicro.2019.8919267","DOIUrl":"https://doi.org/10.1109/sbmicro.2019.8919267","url":null,"abstract":"","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"331 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116233104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919299
Nayara M. S. Carvalho, M. F. Passos, M. R. W. Maciel, R. M. Filho, R. Furlan
In this work, we present novel results of poly (Lco-D, L lactic acid) (PLDL) nanofibers deposited using a nonconventional electrospinning process. It allows to obtain fibers with vertical and horizontal alignment simultaneously. Extending the deposition time, a membrane-like structure with oriented fibers can be collected that is a prospective material for biomedical applications. Fibers with a higher concentration of PLDL, dissolved in chloroform and acetone, resulted in well-formed fibers with small diameters (600 nm to 710 nm).
{"title":"Oriented PLDL Nanofibers","authors":"Nayara M. S. Carvalho, M. F. Passos, M. R. W. Maciel, R. M. Filho, R. Furlan","doi":"10.1109/SBMicro.2019.8919299","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919299","url":null,"abstract":"In this work, we present novel results of poly (Lco-D, L lactic acid) (PLDL) nanofibers deposited using a nonconventional electrospinning process. It allows to obtain fibers with vertical and horizontal alignment simultaneously. Extending the deposition time, a membrane-like structure with oriented fibers can be collected that is a prospective material for biomedical applications. Fibers with a higher concentration of PLDL, dissolved in chloroform and acetone, resulted in well-formed fibers with small diameters (600 nm to 710 nm).","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122172082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919278
W. Perina, J. Martino, P. Agopian
This paper shows the influence of channel width (WNW) and channel length (L) on intrinsic voltage gain (AV) and on unit-gain frequency (ft) of omega-gate nanowire SOI MOSFET. The ft is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the WNW of 10 nm, which improved transconductance, consequently, improving both AV and ft. This technology showed values of AV around 80 dB and a ft of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).
{"title":"Intrinsic Voltage Gain and Unit-Gain Frequency of Omega-Gate Nanowire SOI MOSFETs","authors":"W. Perina, J. Martino, P. Agopian","doi":"10.1109/SBMicro.2019.8919278","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919278","url":null,"abstract":"This paper shows the influence of channel width (W<inf>NW</inf>) and channel length (L) on intrinsic voltage gain (A<inf>V</inf>) and on unit-gain frequency (f<inf>t</inf>) of omega-gate nanowire SOI MOSFET. The f<inf>t</inf> is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the W<inf>NW</inf> of 10 nm, which improved transconductance, consequently, improving both A<inf>V</inf> and f<inf>t</inf>. This technology showed values of A<inf>V</inf> around 80 dB and a f<inf>t</inf> of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126270120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919440
L. Yojo, R. Rangel, K. Sasaki, J. Martino
The BESOI MOSFET is a reconfigurable transistor, i.e., it can work as an n-type or a p-type device due to its back enhanced operating principle. The back gate is used to induce carriers at the back interface (silicon film/buried oxide) to the low doped channel. This work aims to propose a first order model for the drain current at linear region of the p-type BESOI MOSFET based on the back and front silicon film/SiO2 interfaces conduction. The analytical expression takes into account the series resistance, that plays an important role in the BESOI MOSFET due to the low doped channel and the drain and source Schottky contacts. The comparison between simulated and modeled data showed a very good agreement for a first order modeling.
{"title":"Analytical Modeling of the p-Type BESOI MOSFET at Linear Region Operation Leonard","authors":"L. Yojo, R. Rangel, K. Sasaki, J. Martino","doi":"10.1109/SBMicro.2019.8919440","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919440","url":null,"abstract":"The BESOI MOSFET is a reconfigurable transistor, i.e., it can work as an n-type or a p-type device due to its back enhanced operating principle. The back gate is used to induce carriers at the back interface (silicon film/buried oxide) to the low doped channel. This work aims to propose a first order model for the drain current at linear region of the p-type BESOI MOSFET based on the back and front silicon film/SiO2 interfaces conduction. The analytical expression takes into account the series resistance, that plays an important role in the BESOI MOSFET due to the low doped channel and the drain and source Schottky contacts. The comparison between simulated and modeled data showed a very good agreement for a first order modeling.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130438132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919331
D. K. Kumada, M. S. Peixoto, L. A. Gómez-Malagón, R. Onmori, J. A. García, L. Kassab
This work shows the increase of silicon solar cell efficiency due to Tb$^{3+}$ doped tellurite (TeO}2-ZnO-Na2 O-PbO) glass with silver nanoparticles used as cover layer. Due to Tb$^{3+}$ down-conversion process optimized by the plasmon resonance of the metallic nanoparticles, enhancement of $sim 4.93$% was observed when compared to the efficiency of the uncovered solar cell. The samples are prepared using the melting quenching techinique and the electrical characterization is performed using a solar simulator in order to obtain the current-voltage and power-voltage curve. As there is a mismatch between the solar spectrum and the one of the silicon solar cell, the procedure presented in this work represents an alternative to increase the number of photons that are converted from the ultraviolet region to the visible one and opens the posibility for application with new photovoltaic devices based on organic or inorganic materials.
{"title":"Influence of Silver nanoparticles on Tb3+ doped TeO2-ZnO glasses covered Silicon solar cell","authors":"D. K. Kumada, M. S. Peixoto, L. A. Gómez-Malagón, R. Onmori, J. A. García, L. Kassab","doi":"10.1109/SBMicro.2019.8919331","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919331","url":null,"abstract":"This work shows the increase of silicon solar cell efficiency due to Tb$^{3+}$ doped tellurite (TeO}2-ZnO-Na2 O-PbO) glass with silver nanoparticles used as cover layer. Due to Tb$^{3+}$ down-conversion process optimized by the plasmon resonance of the metallic nanoparticles, enhancement of $sim 4.93$% was observed when compared to the efficiency of the uncovered solar cell. The samples are prepared using the melting quenching techinique and the electrical characterization is performed using a solar simulator in order to obtain the current-voltage and power-voltage curve. As there is a mismatch between the solar spectrum and the one of the silicon solar cell, the procedure presented in this work represents an alternative to increase the number of photons that are converted from the ultraviolet region to the visible one and opens the posibility for application with new photovoltaic devices based on organic or inorganic materials.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122253001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919256
Cesar do Amaral, Danilo L. Li, V. Pereira, S. Blawid
Printed organic electronic devices are considered a key technology for enabling the Internet of Things. The development of organic electronics is fueled by new materials, which allow the printing of thin films on flexible substrates at low cost. Green materials are preferable, which are recyclable or biodegradable and are based on environment-friendly, noncorrosive and abundant chemical precursors processed at low temperature without toxic waste. Especially for countries with large biodiversity, like Brazil, the screening of natural materials is a viable strategy to discover suitable prototype materials that may be further developed. We report here on the design of a simple electrical characterization platform able to distinguish between conducting, semiconducting and insulating behavior. In an exemplary case study we show that curcumin, a natural dye, resembles an insulator.
{"title":"Design of a simple electrical characterization platform for semiconducting organic films","authors":"Cesar do Amaral, Danilo L. Li, V. Pereira, S. Blawid","doi":"10.1109/SBMicro.2019.8919256","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919256","url":null,"abstract":"Printed organic electronic devices are considered a key technology for enabling the Internet of Things. The development of organic electronics is fueled by new materials, which allow the printing of thin films on flexible substrates at low cost. Green materials are preferable, which are recyclable or biodegradable and are based on environment-friendly, noncorrosive and abundant chemical precursors processed at low temperature without toxic waste. Especially for countries with large biodiversity, like Brazil, the screening of natural materials is a viable strategy to discover suitable prototype materials that may be further developed. We report here on the design of a simple electrical characterization platform able to distinguish between conducting, semiconducting and insulating behavior. In an exemplary case study we show that curcumin, a natural dye, resembles an insulator.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134420744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919463
F. Bergamaschi, S. Barraud, M. Cassé, M. Vinet, O. Faynot, B. C. Paz, M. Pavanello
This work presents the impact of substrate bias on the mobility of high-$mathbf kappa$/metal gate n-type $Omega$-gate SOI nanowire MOS transistors. The analysis is performed through experimental measurements and tridimensional numerical simulations. Mobility and its degradation coefficients are extracted using the Y-function method. The results showed that back bias increase has a beneficial effect on mobility for negative voltages and up to 10V, due to reduction in surface roughness scattering. But for higher back bias levels, mobility starts undergoing severe degradation. Simulations show that strong positive back bias drags the inversion layer down to the second interface, where mobility is shown to be lower.
{"title":"Impact of substrate bias on the mobility of n-type ɷ-gate SOI nanowire MOSFETs","authors":"F. Bergamaschi, S. Barraud, M. Cassé, M. Vinet, O. Faynot, B. C. Paz, M. Pavanello","doi":"10.1109/SBMicro.2019.8919463","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919463","url":null,"abstract":"This work presents the impact of substrate bias on the mobility of high-$mathbf kappa$/metal gate n-type $Omega$-gate SOI nanowire MOS transistors. The analysis is performed through experimental measurements and tridimensional numerical simulations. Mobility and its degradation coefficients are extracted using the Y-function method. The results showed that back bias increase has a beneficial effect on mobility for negative voltages and up to 10V, due to reduction in surface roughness scattering. But for higher back bias levels, mobility starts undergoing severe degradation. Simulations show that strong positive back bias drags the inversion layer down to the second interface, where mobility is shown to be lower.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130871081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919318
R. Cesar, A. Pascon, J. A. Diniz, E. Joanni, M. Mederos, R. Texeira
This paper compares titanium oxide (TiO2) thin films deposited by RF and DC sputtering. Structural characterization was used to investigate the morphology of TiO2 thin films. Both films show the rutile and anatase crystal structure; ellipsometry show thickness and refractive index of 50 nm and 2.43 for the TiO2 deposited by DC sputtering and 40 nm and 2.32 for the film by RF sputtering; AFM shows the roots mean square (RMS) roughness of 6.5 nm and 8 nm for TiO2 deposited by DC and RF sputtering, respectively. For electrical characterization was developed MOS capacitor; from them was possible to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. Therefore, the best method to deposit TiO2 is DC reactive sputtering; because this method showed a better electrical conditions and a well-defined crystalline structure
{"title":"Comparasion between TiO2 thin films deposited by DC and RF sputtering.","authors":"R. Cesar, A. Pascon, J. A. Diniz, E. Joanni, M. Mederos, R. Texeira","doi":"10.1109/SBMicro.2019.8919318","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919318","url":null,"abstract":"This paper compares titanium oxide (TiO2) thin films deposited by RF and DC sputtering. Structural characterization was used to investigate the morphology of TiO2 thin films. Both films show the rutile and anatase crystal structure; ellipsometry show thickness and refractive index of 50 nm and 2.43 for the TiO2 deposited by DC sputtering and 40 nm and 2.32 for the film by RF sputtering; AFM shows the roots mean square (RMS) roughness of 6.5 nm and 8 nm for TiO2 deposited by DC and RF sputtering, respectively. For electrical characterization was developed MOS capacitor; from them was possible to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. Therefore, the best method to deposit TiO2 is DC reactive sputtering; because this method showed a better electrical conditions and a well-defined crystalline structure","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114417462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919283
G. Santos, G. S. Braga, I. Cambauva, F. Fonseca
Herein we report the evaluation of a PAni:PSS Layer-by-Layer (LbL) ultrathin film as hole transport layer (HTL) of Bulk Heterojunction Organic Solar Cells (OSC). It was also highlighted the importance of using a lithium fluorite (LiF) dielectric layer to improve devices overall performance. The best result was found for devices comprising five PAni:PSS bilayers and a LiF dielectric layer in a thin film structure. There is a perspective of increasing device’s efficiency based on LbL materials used as HTL and their deposition parameters.
{"title":"Electrical characterization of bulk heterojunction organic solar cells using PAni:PSS Layer-by-Layer films","authors":"G. Santos, G. S. Braga, I. Cambauva, F. Fonseca","doi":"10.1109/SBMicro.2019.8919283","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919283","url":null,"abstract":"Herein we report the evaluation of a PAni:PSS Layer-by-Layer (LbL) ultrathin film as hole transport layer (HTL) of Bulk Heterojunction Organic Solar Cells (OSC). It was also highlighted the importance of using a lithium fluorite (LiF) dielectric layer to improve devices overall performance. The best result was found for devices comprising five PAni:PSS bilayers and a LiF dielectric layer in a thin film structure. There is a perspective of increasing device’s efficiency based on LbL materials used as HTL and their deposition parameters.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116001554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：