Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919478
C. Claeys, E. Simoen
Future mobile communication systems and 5G base stations are relying on the availability of a variety of high-speed high-performing semiconductor technologies. Not only advanced CMOS technologies will form the cornerstone but also innovative heterogeneous technologies manufactured on a Si platform will be needed for future System-on-Chip applications. III-nitrides will play an important role in the RF and power parts. While increased system functionality and density can be achieved by 3D integration based on Through Silicon Vias, a strong focus is nowadays going to the monolithic or 3D sequential integration on a Si substrate. Several of these different technologies are reviewed and discussed.
{"title":"Advanced CMOS Integration Technologies for Future Mobile Applications","authors":"C. Claeys, E. Simoen","doi":"10.1109/SBMicro.2019.8919478","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919478","url":null,"abstract":"Future mobile communication systems and 5G base stations are relying on the availability of a variety of high-speed high-performing semiconductor technologies. Not only advanced CMOS technologies will form the cornerstone but also innovative heterogeneous technologies manufactured on a Si platform will be needed for future System-on-Chip applications. III-nitrides will play an important role in the RF and power parts. While increased system functionality and density can be achieved by 3D integration based on Through Silicon Vias, a strong focus is nowadays going to the monolithic or 3D sequential integration on a Si substrate. Several of these different technologies are reviewed and discussed.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116185083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919282
O. Tamarin, J. Lachaud, H. Hallil, C. Dejous, D. Rebière
Acoustic wave sensors are given special attention since a few decades as they offer a good sensitivity for detection applications. Their ability to operate in liquid and gas media make them a very interesting device. Nevertheless, to further improve their sensitivity in term of “mass loading effect”, the increasing of the surface to volume ratio of the associated sensitive layer is a promising strategy which could overcome many of the challenges faced by the in situ detection of low mass biomolecules. This paper presents an overview of the latest works carried out on the association of Love wave transducers with SiO2 and TiO2 porous layers at the IMS Laboratory. The principal results are developed, and the current investigations and perspective are exposed.
{"title":"Application of Love Wave Sensing With Mesoporous Thin Film","authors":"O. Tamarin, J. Lachaud, H. Hallil, C. Dejous, D. Rebière","doi":"10.1109/SBMicro.2019.8919282","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919282","url":null,"abstract":"Acoustic wave sensors are given special attention since a few decades as they offer a good sensitivity for detection applications. Their ability to operate in liquid and gas media make them a very interesting device. Nevertheless, to further improve their sensitivity in term of “mass loading effect”, the increasing of the surface to volume ratio of the associated sensitive layer is a promising strategy which could overcome many of the challenges faced by the in situ detection of low mass biomolecules. This paper presents an overview of the latest works carried out on the association of Love wave transducers with SiO2 and TiO2 porous layers at the IMS Laboratory. The principal results are developed, and the current investigations and perspective are exposed.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131553660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919340
A. Bôas, M. D. de Melo, R. Santos, R. Giacomini, N. Medina, L. Seixas, F. R. Palomo, M. Guazzelli
This work addresses the effects of Total Ionizing Dose (TID) on a Gallium Nitride (GaN) transistor before, during and after exposing to radiation, and also the comparison between biasing or not, during radiation exposition. These High Electron Mobility Transistors (HEMTs) were exposed to 10-keV X-rays effective energy and tested in a controlled temperature environment. Radiation doses varied in a wide range up to 350 krad. The results show that the devices analyzed, the commercial off-the-shelf (COTs) GaN - GS61008T, suffer few effects of ionizing radiation, and recover their electrical characteristics, especially when in on-state mode, indicating they are good candidates for use in harsh environments.
本文研究了总电离剂量(TID)对氮化镓(GaN)晶体管在暴露于辐射之前、期间和之后的影响，以及在辐射暴露期间偏置与不偏置之间的比较。这些高电子迁移率晶体管(hemt)暴露在10 kev x射线有效能量下，并在受控温度环境中进行测试。辐射剂量变化很大，可达350克拉。结果表明，所分析的器件(商用现成(COTs) GaN - GS61008T)受电离辐射的影响很小，并且可以恢复其电气特性，特别是在导通模式下，这表明它们是恶劣环境下使用的良好候选器件。
{"title":"Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor","authors":"A. Bôas, M. D. de Melo, R. Santos, R. Giacomini, N. Medina, L. Seixas, F. R. Palomo, M. Guazzelli","doi":"10.1109/SBMicro.2019.8919340","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919340","url":null,"abstract":"This work addresses the effects of Total Ionizing Dose (TID) on a Gallium Nitride (GaN) transistor before, during and after exposing to radiation, and also the comparison between biasing or not, during radiation exposition. These High Electron Mobility Transistors (HEMTs) were exposed to 10-keV X-rays effective energy and tested in a controlled temperature environment. Radiation doses varied in a wide range up to 350 krad. The results show that the devices analyzed, the commercial off-the-shelf (COTs) GaN - GS61008T, suffer few effects of ionizing radiation, and recover their electrical characteristics, especially when in on-state mode, indicating they are good candidates for use in harsh environments.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130808421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919335
R. A. Katia Sasaki, R. Rangel, L. Yojo, J. Martino
The third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) on UTBB (Ultra-Thin Body and Buried Oxide) was fabricated, analyzed and compared to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces for UTBB BESOI devices improves most of the parameters analyzed. Its higher drain current (67%), maximum transconductance (122%) and body factor (217%) with seven times lower back gate bias make the UTBB BESOI MOSFET more compatible with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.
{"title":"Third Generation BESOI (Back-Enhanced SOI) pMOSFET fabricated on UTBB Wafer","authors":"R. A. Katia Sasaki, R. Rangel, L. Yojo, J. Martino","doi":"10.1109/SBMicro.2019.8919335","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919335","url":null,"abstract":"The third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) on UTBB (Ultra-Thin Body and Buried Oxide) was fabricated, analyzed and compared to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces for UTBB BESOI devices improves most of the parameters analyzed. Its higher drain current (67%), maximum transconductance (122%) and body factor (217%) with seven times lower back gate bias make the UTBB BESOI MOSFET more compatible with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131218027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919333
T. Cortiz, J. F. Almeida, I. Pereyra, K. F. Albertin
Optimized TiO2 nanotubes arrays were obtained by the deposition of photoresist layers on the Ti foil prior to the anodization process. In this way the initial current during the anodization process decreases significantly, avoiding or diminishing the formation of the initial compact TiO2 layer, also for long process times nanograss formation is avoided. TiO2 nanotubes were obtained with the conventional process and with the addition of the photoresist layer different anodization voltages and times. TiO2 nanotubes pH electrodes were fabricated to study the effect of this optimized process in sensors response. The nanostructures morphology was analyzed through scanning electron microscopy (SEM) technique. A total removal of the undesirable layer and a complete release of the nanotubes mouth were obtained. The pH electrodes where characterized utilizing a buffer solution, PH sensibility improved and absence of hysteresis effects were observed for the devices fabricated with TiO2 nanotubes obtained with the optimized process.
{"title":"pH sensors with TiO2 Nanotubes fabricated with photoresist layer","authors":"T. Cortiz, J. F. Almeida, I. Pereyra, K. F. Albertin","doi":"10.1109/SBMicro.2019.8919333","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919333","url":null,"abstract":"Optimized TiO2 nanotubes arrays were obtained by the deposition of photoresist layers on the Ti foil prior to the anodization process. In this way the initial current during the anodization process decreases significantly, avoiding or diminishing the formation of the initial compact TiO2 layer, also for long process times nanograss formation is avoided. TiO2 nanotubes were obtained with the conventional process and with the addition of the photoresist layer different anodization voltages and times. TiO2 nanotubes pH electrodes were fabricated to study the effect of this optimized process in sensors response. The nanostructures morphology was analyzed through scanning electron microscopy (SEM) technique. A total removal of the undesirable layer and a complete release of the nanotubes mouth were obtained. The pH electrodes where characterized utilizing a buffer solution, PH sensibility improved and absence of hysteresis effects were observed for the devices fabricated with TiO2 nanotubes obtained with the optimized process.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128143998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919303
Celso M. Silva, Daniel A. Spegiorin, Tiago F. Silva, R. Onmori
A high-resolution and compact wavelength detector capable of resolving very small changes in the spectral information of the incident light is highly desirable for many applications such as Lab-on-Chip systems, biosensors, chip-sized detectors, on-chip fluorescence spectrometry, wavelength shift detectors, interrogations system, and more. In this work is present the project, simulations, fabrications and calibration of a variable interference filter (VIF) constituted by a wedgeshaped Fabry-Perot cavity placed between two stacks of thin films, forming dielectric reflectors. This device constitutes an optical filter that converts the spectral information in a position dependent signal that can be measured by a photo detector array (PDA). We have investigated the performance of the designed VIF depending on its optical properties in order to optimize its geometrical configuration. With the results obtained we fabricated a multi-channel spectral detector that can be used in environmental analysis. To demonstrate this viability, it is proposed a basic system composed of a VIF mounted on top of a matrix of sensors connected to a dedicated electronic module, to measure and store the intensity of the incident radiation data and the absorption spectra of molecules present in a detection chamber of a microfluidic system. This prototype is aimed to analyze biological fluids, human urine, and results will be compared with results obtained using standard commercial instruments.
{"title":"Variable Interference Filter (VIF) for biological and Chemical sensors","authors":"Celso M. Silva, Daniel A. Spegiorin, Tiago F. Silva, R. Onmori","doi":"10.1109/SBMicro.2019.8919303","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919303","url":null,"abstract":"A high-resolution and compact wavelength detector capable of resolving very small changes in the spectral information of the incident light is highly desirable for many applications such as Lab-on-Chip systems, biosensors, chip-sized detectors, on-chip fluorescence spectrometry, wavelength shift detectors, interrogations system, and more. In this work is present the project, simulations, fabrications and calibration of a variable interference filter (VIF) constituted by a wedgeshaped Fabry-Perot cavity placed between two stacks of thin films, forming dielectric reflectors. This device constitutes an optical filter that converts the spectral information in a position dependent signal that can be measured by a photo detector array (PDA). We have investigated the performance of the designed VIF depending on its optical properties in order to optimize its geometrical configuration. With the results obtained we fabricated a multi-channel spectral detector that can be used in environmental analysis. To demonstrate this viability, it is proposed a basic system composed of a VIF mounted on top of a matrix of sensors connected to a dedicated electronic module, to measure and store the intensity of the incident radiation data and the absorption spectra of molecules present in a detection chamber of a microfluidic system. This prototype is aimed to analyze biological fluids, human urine, and results will be compared with results obtained using standard commercial instruments.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125293158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919276
V. Silva, G. Wirth, J. Martino, P. Agopian
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high ($Delta$ V $approx200 -300$mV – for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.
负偏置温度不稳定性(NBTI)是先进技术节点的重要可靠性参数。本文提出了一种在ω栅极纳米线(NW) pMOSFET中进行NBTI的实验研究。为了更好地理解NW晶体管中的NBTI效应，进行了三维数值模拟。结果表明，NW中NBTI的性能高($Delta$ V $approx200 -300$ mV -对于W = 10nm)，这是由于较高的栅极氧化物电场加速了NBTI效应，提供了较高的降解效果。本研究针对不同的通道宽度和长度进行。
{"title":"A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs","authors":"V. Silva, G. Wirth, J. Martino, P. Agopian","doi":"10.1109/SBMicro.2019.8919276","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919276","url":null,"abstract":"The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high ($Delta$ V $approx200 -300$mV – for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114395210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919465
C. Bordon, R. Gunji, D. Silva, M. M. Martins, L. Kassab
The effect of silver nanoparticles on the optical amplification of lead germanium oxide glasses (PbO-GeO2) doped with Nd3+ is presented in this work. Infrared photoluminescence at 1064 nm is investigated with the excitation made with a continuous-wave diode laser operating at 808 nm, in resonance with the Nd3+ transition (4 I9/2/4 F5/2). Growth of $sim 100$% in the photoluminescence intensity is observed in comparison with the reference sample without silver nanoparticles. Optical gain measurements using 2 mm thick samples are performed with a probe beam at 1064 nm and the pump beam at 808 nm. Gain of 2.5 dB/cm in the presence of metallic nanoparticles was measured when the pump laser power was of 1.0 W. The contribution of silver nanoparticles to the gain enhancement was of 100% and was correlated to the photoluminescence enhancement attributed to the increased local field produced by the metallic nanoparticles. The present study shows that PbO-GeO2 glasses containing Nd3+ and silver nanoparticles are potential candidates to be used in optical amplifiers at 1064 nm. Moreover, it demonstrates the possibility to perform light guiding and evaluate the optical gain performance before the construction of the photonic device using glasses fabricated with the melt quenching technique which is simple and cheap.
{"title":"Effect of silver nanoparticles on the optical amplification of lead germanium oxide glasses doped with Nd3+","authors":"C. Bordon, R. Gunji, D. Silva, M. M. Martins, L. Kassab","doi":"10.1109/SBMicro.2019.8919465","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919465","url":null,"abstract":"The effect of silver nanoparticles on the optical amplification of lead germanium oxide glasses (PbO-GeO2) doped with Nd3+ is presented in this work. Infrared photoluminescence at 1064 nm is investigated with the excitation made with a continuous-wave diode laser operating at 808 nm, in resonance with the Nd3+ transition (4 I9/2/4 F5/2). Growth of $sim 100$% in the photoluminescence intensity is observed in comparison with the reference sample without silver nanoparticles. Optical gain measurements using 2 mm thick samples are performed with a probe beam at 1064 nm and the pump beam at 808 nm. Gain of 2.5 dB/cm in the presence of metallic nanoparticles was measured when the pump laser power was of 1.0 W. The contribution of silver nanoparticles to the gain enhancement was of 100% and was correlated to the photoluminescence enhancement attributed to the increased local field produced by the metallic nanoparticles. The present study shows that PbO-GeO2 glasses containing Nd3+ and silver nanoparticles are potential candidates to be used in optical amplifiers at 1064 nm. Moreover, it demonstrates the possibility to perform light guiding and evaluate the optical gain performance before the construction of the photonic device using glasses fabricated with the melt quenching technique which is simple and cheap.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116668375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919316
A. B. Carlos Mori, G. D. Paula Agopian, J. Martino
In this work we propose for the first time the use of the recently introduced UTBBBE SOI TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept.
在这项工作中，我们首次提出使用最近推出的UTBBBE SOI TFET(超薄体和盒背增强绝缘体上硅隧道fet)作为MOSFET器件，仅通过改变其偏置条件来工作。其原理是基于后门电场产生的载流子类型。对于负的后门和漏极偏置应用于本工作中研究的器件，它像pTFET一样工作，而对于正的偏置，它像nMOS一样工作。采用TCAD装置仿真进行概念验证。
{"title":"Application of UTBBBE SOI Tunnel-FET as a Dual-Technology Transistor","authors":"A. B. Carlos Mori, G. D. Paula Agopian, J. Martino","doi":"10.1109/SBMicro.2019.8919316","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919316","url":null,"abstract":"In this work we propose for the first time the use of the recently introduced UTBBBE SOI TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130110345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919391
R. Rooyackers
The quest for low power electronics has driven extensive research on alternative device architectures. To maintain a sufficiently large ION/IOFF current ratio, devices with a subthreshold swing (SS) below the 60mV/decade limit as for MOSFETs are needed. Tunnel-FETs (TFET) promise a SS smaller than 60mV/dec and are therefore considered as interesting candidates to replace MOSFETs for low-power applications. However, the small band-to-band-tunneling efficiency due to the large indirect bandgap of silicon results in low on-currents of all-silicon TFETs. Therefore, new materials such as III-V compounds or germanium, featuring lower bandgaps and smaller effective mass to improve the tunneling efficiency, heterogeneous integration and different TFET device architectures are discussed. 2D semiconductors materials are also investigated for possible application in TFETs.
{"title":"Trends and challenges in Tunnel-FETs for low power electronics","authors":"R. Rooyackers","doi":"10.1109/SBMicro.2019.8919391","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919391","url":null,"abstract":"The quest for low power electronics has driven extensive research on alternative device architectures. To maintain a sufficiently large ION/IOFF current ratio, devices with a subthreshold swing (SS) below the 60mV/decade limit as for MOSFETs are needed. Tunnel-FETs (TFET) promise a SS smaller than 60mV/dec and are therefore considered as interesting candidates to replace MOSFETs for low-power applications. However, the small band-to-band-tunneling efficiency due to the large indirect bandgap of silicon results in low on-currents of all-silicon TFETs. Therefore, new materials such as III-V compounds or germanium, featuring lower bandgaps and smaller effective mass to improve the tunneling efficiency, heterogeneous integration and different TFET device architectures are discussed. 2D semiconductors materials are also investigated for possible application in TFETs.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116508037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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