Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543627
Cuicui Wang, Xue Meng, H. Lam, Hongjuan Lu, Shengdong Zhang
This work presents a new pixel circuit and driving scheme for active-matrix organic light-emitting diode (AMOLED) displays, where the OLED is under AC bias. The proposed pixel circuit consists of five thin film transistors (TFTs) and one capacitor. Due to the AC bias, the OLED is reverse biased during the non-emission period, which not only prevents the OLED from light emitting during the programming period to ensure a high contrast ratio displays; but also suppresses the OLED degradation and thus extends the lifetime of the AMOLED displays. It is verified that the proposed circuit can compensate for the threshold voltage variations of the driving TFT and the OLED.
{"title":"A new AC biased pixel circuit for active matrix organic light-emitting diode displays","authors":"Cuicui Wang, Xue Meng, H. Lam, Hongjuan Lu, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543627","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543627","url":null,"abstract":"This work presents a new pixel circuit and driving scheme for active-matrix organic light-emitting diode (AMOLED) displays, where the OLED is under AC bias. The proposed pixel circuit consists of five thin film transistors (TFTs) and one capacitor. Due to the AC bias, the OLED is reverse biased during the non-emission period, which not only prevents the OLED from light emitting during the programming period to ensure a high contrast ratio displays; but also suppresses the OLED degradation and thus extends the lifetime of the AMOLED displays. It is verified that the proposed circuit can compensate for the threshold voltage variations of the driving TFT and the OLED.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130473001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543670
Der-Long Chen, H. Yu, Chih-Chiang Yang, Y. Su, Cheng-Wei Chou, Jian-Long Ruan
The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.
{"title":"Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment","authors":"Der-Long Chen, H. Yu, Chih-Chiang Yang, Y. Su, Cheng-Wei Chou, Jian-Long Ruan","doi":"10.1109/AM-FPD.2016.7543670","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543670","url":null,"abstract":"The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129317529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543609
M. He, Chao Wang, Wen-Ya Lee, Desheng Kong, R. Pfattner, Weijun Niu, J. R. Matthews, Arthur L. Wallace, Zhenan Bao
Corning has developed three generations of polymeric organic semiconducting (OSC) materials, each with progressively improved electronic performance and processability. These materials possess excellent solubility, mobility and stability. Stanford University has developed a new polymer dielectric material based on a fluoroelastomer. Combined with Coming's OSC polymers, this enables easy to fabricate transistors with high transconductance, low driving voltage and excellent device stability, even in water.
{"title":"Development of organic semiconducting technology to realize low driving voltages","authors":"M. He, Chao Wang, Wen-Ya Lee, Desheng Kong, R. Pfattner, Weijun Niu, J. R. Matthews, Arthur L. Wallace, Zhenan Bao","doi":"10.1109/AM-FPD.2016.7543609","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543609","url":null,"abstract":"Corning has developed three generations of polymeric organic semiconducting (OSC) materials, each with progressively improved electronic performance and processability. These materials possess excellent solubility, mobility and stability. Stanford University has developed a new polymer dielectric material based on a fluoroelastomer. Combined with Coming's OSC polymers, this enables easy to fabricate transistors with high transconductance, low driving voltage and excellent device stability, even in water.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134109474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543629
Huan-Jie Gao, Yu-Hsiang Hung, Tien‐Lung Chiu, Yu-Chi Li, Jau-Jiun Huang, H. Ho, Chi-Fang Lin, Jiu-Haw Lee, M. Leung
A new organic host material, PCT comprising pyridine, carbazole and triazole moieties, was doped with a blue emitter bis[2-(4,6"difluorophenyl)pyridinato-C2,N](pico]inato)iridium(III) (FIrpic) to be an emitting layer (EML) of a phosphorescent organic light-emitting diodes device (PhOLED). With various FIrpic concentration (12%, 15% and 18% by volume ratio) in the EML, a series of high efficiency blue PhOLED was demonstrated showing the external quantum efficiency over 20%.
{"title":"New PCT host to achieve high efficiency blue phosphorescent organic light emitting diode","authors":"Huan-Jie Gao, Yu-Hsiang Hung, Tien‐Lung Chiu, Yu-Chi Li, Jau-Jiun Huang, H. Ho, Chi-Fang Lin, Jiu-Haw Lee, M. Leung","doi":"10.1109/AM-FPD.2016.7543629","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543629","url":null,"abstract":"A new organic host material, PCT comprising pyridine, carbazole and triazole moieties, was doped with a blue emitter bis[2-(4,6\"difluorophenyl)pyridinato-C2,N](pico]inato)iridium(III) (FIrpic) to be an emitting layer (EML) of a phosphorescent organic light-emitting diodes device (PhOLED). With various FIrpic concentration (12%, 15% and 18% by volume ratio) in the EML, a series of high efficiency blue PhOLED was demonstrated showing the external quantum efficiency over 20%.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116615856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543661
N. Yoshioka, A. Heya, Naoto Matuo, Yousuke Nakamura, Gakuhiko Yokomori, M. Yoshioka, K. Kohama, Kazuhiro Ito
The formation of nanocrystal silicon (nc-Si) in SiOx is one of the key technologies for the realization of high-quality solar cells. The SiOx films were deposited on a quartz substrate by a reactive sputtering. The Si/O ratio of the SiOx films were changed from 0.56 to 2.07. The nc-Si in SiOx film was characterized by Raman scattering spectroscopy. The Crystalline fractions of all samples after FLA were almost 100%. The size of nc-Si was estimated to 9 nm by Raman peak position. It is shown that the grain size of nc-Si was not changed by the Si/O ratio. On the other hand, the full width at half maximum (FWHM) of Raman peak due to crystal phase was changed by the Si/O ratio of SiOx film.
{"title":"Formation of nc-Si in SiOx by flash lamp anneling","authors":"N. Yoshioka, A. Heya, Naoto Matuo, Yousuke Nakamura, Gakuhiko Yokomori, M. Yoshioka, K. Kohama, Kazuhiro Ito","doi":"10.1109/AM-FPD.2016.7543661","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543661","url":null,"abstract":"The formation of nanocrystal silicon (nc-Si) in SiOx is one of the key technologies for the realization of high-quality solar cells. The SiOx films were deposited on a quartz substrate by a reactive sputtering. The Si/O ratio of the SiOx films were changed from 0.56 to 2.07. The nc-Si in SiOx film was characterized by Raman scattering spectroscopy. The Crystalline fractions of all samples after FLA were almost 100%. The size of nc-Si was estimated to 9 nm by Raman peak position. It is shown that the grain size of nc-Si was not changed by the Si/O ratio. On the other hand, the full width at half maximum (FWHM) of Raman peak due to crystal phase was changed by the Si/O ratio of SiOx film.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121223484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543657
W. Yeh, S. Moriyama
A chevron-shaped cw-laser-induced single crystal growth in Si thin-film on rolled flexible substrate was proposed and demonstrated for roll-to-roll fabrication process. The substrate was bendable thin borosilicate glass with sputter deposited SiO2 and Si film, and was attached onto a rotating roll which rotated at a circumferential speed of 0.013 m/s during chevron-shaped cw-laser irradiation. Single grain growth was observed along laser scan direction.
{"title":"Growth of single crystal stripe in Si film on rolled flexible substrate by micro-chevron-shaped cw laser scanning","authors":"W. Yeh, S. Moriyama","doi":"10.1109/AM-FPD.2016.7543657","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543657","url":null,"abstract":"A chevron-shaped cw-laser-induced single crystal growth in Si thin-film on rolled flexible substrate was proposed and demonstrated for roll-to-roll fabrication process. The substrate was bendable thin borosilicate glass with sputter deposited SiO2 and Si film, and was attached onto a rotating roll which rotated at a circumferential speed of 0.013 m/s during chevron-shaped cw-laser irradiation. Single grain growth was observed along laser scan direction.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121568678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543626
Bo‐Ru Yang
Manipulating the particles' movement within the micro-cavity has created a new category of reflective display, termed “Electro-Phoretic Display, (EPD).” The superior performances of EPD under sunlight ambience and the capability of fabricated with roll-to-roll process has make it as a very unique and critical technology. This paper intends to discuss the intriguing physics of how particles being charged, bistable, and operated for EPD applications; meanwhile, discussing the strategies for achieving full-color.
{"title":"Overview of design considerations for electrophoretic e-paper and strategies for achieving full-color","authors":"Bo‐Ru Yang","doi":"10.1109/AM-FPD.2016.7543626","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543626","url":null,"abstract":"Manipulating the particles' movement within the micro-cavity has created a new category of reflective display, termed “Electro-Phoretic Display, (EPD).” The superior performances of EPD under sunlight ambience and the capability of fabricated with roll-to-roll process has make it as a very unique and critical technology. This paper intends to discuss the intriguing physics of how particles being charged, bistable, and operated for EPD applications; meanwhile, discussing the strategies for achieving full-color.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124263081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543692
Itaru Raifuku, Y. Ishikawa, S. Ito, Y. Uraoka
In this study, we investigated the characteristics of perovskite solar cells under low illuminance conditions. As a result, open-circuit voltage of perovskite solar cells remained over 0.8V at 0.1% illumination of AM1.5. To further improvement, internal states of perovskite solar cells were investigated by impedance spectroscopy. As a result, it was indicated that mesoporous TiO2 is not suitable under low illuminance conditions.
{"title":"Internal resistance of perovskite solar cells under low illuminance conditions","authors":"Itaru Raifuku, Y. Ishikawa, S. Ito, Y. Uraoka","doi":"10.1109/AM-FPD.2016.7543692","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543692","url":null,"abstract":"In this study, we investigated the characteristics of perovskite solar cells under low illuminance conditions. As a result, open-circuit voltage of perovskite solar cells remained over 0.8V at 0.1% illumination of AM1.5. To further improvement, internal states of perovskite solar cells were investigated by impedance spectroscopy. As a result, it was indicated that mesoporous TiO2 is not suitable under low illuminance conditions.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131087499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543630
Jau-Jiun Huang, Yu-Hsiang Hung, Lik-Ka Yun, M. Leung, Tien‐Lung Chiu, Jiu-Haw Lee
The two novel benzimidazole/carbazole hybrid ambipolar molecules, o-CbzDiBz and m-CbzDiBz, were synthesized as hosts for blue PHOLEDs. Bis[2-(4,6-diiluorophenyl)pyridinato-C2,N](picolinato)iridium(III) (FIrpic)-based devices can achieve 41.86 and 49.31 cd/A of current efficiency in o-CbzDiBz and m-CbzDiBz matrix, respectively.
{"title":"Novel benzimidazole/carbazole hybrid ambipolar molecules and application in PhOLEDs","authors":"Jau-Jiun Huang, Yu-Hsiang Hung, Lik-Ka Yun, M. Leung, Tien‐Lung Chiu, Jiu-Haw Lee","doi":"10.1109/AM-FPD.2016.7543630","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543630","url":null,"abstract":"The two novel benzimidazole/carbazole hybrid ambipolar molecules, o-CbzDiBz and m-CbzDiBz, were synthesized as hosts for blue PHOLEDs. Bis[2-(4,6-diiluorophenyl)pyridinato-C2,N](picolinato)iridium(III) (FIrpic)-based devices can achieve 41.86 and 49.31 cd/A of current efficiency in o-CbzDiBz and m-CbzDiBz matrix, respectively.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131712162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543662
M. Sasaki, M. Miyao, T. Sadoh
A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2%), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2%) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.
{"title":"Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics","authors":"M. Sasaki, M. Miyao, T. Sadoh","doi":"10.1109/AM-FPD.2016.7543662","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543662","url":null,"abstract":"A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2%), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2%) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130900262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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