Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543646
Hyun-Sik Choi, Jong-Heon Yang, J. Choi, Chi-Sun Hwang, S. Cho, S. Jeon
In oxide thin-film transistors (TFTs), light illumination effect is a big concern due to its operating condition. Light illumination can change many electrical properties in oxide TFTs such as mobility and threshold voltage (Vth). In many researches, Oxygen vacancy is suspected as a main cause of the changes by light illumination. Recently, the back channel formation by field-induced macroscopic barrier model is reported under light illumination. This is also related to Oxygen vacancy. In this letter, we investigate the gradual changes in DC and CV characteristics depending on the dual-channel thicknesses. For this purpose, we use the aluminum-doped indium zinc tin oxide (AIZTO)/indium zinc oxide (IZO) dual-channel TFTs. The main goal of this paper is to find the main cause of the changes by light illumination in various dual-channel thicknesses.
{"title":"Light illumination effect in AIZTO/IZO dual-channel TFTs","authors":"Hyun-Sik Choi, Jong-Heon Yang, J. Choi, Chi-Sun Hwang, S. Cho, S. Jeon","doi":"10.1109/AM-FPD.2016.7543646","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543646","url":null,"abstract":"In oxide thin-film transistors (TFTs), light illumination effect is a big concern due to its operating condition. Light illumination can change many electrical properties in oxide TFTs such as mobility and threshold voltage (Vth). In many researches, Oxygen vacancy is suspected as a main cause of the changes by light illumination. Recently, the back channel formation by field-induced macroscopic barrier model is reported under light illumination. This is also related to Oxygen vacancy. In this letter, we investigate the gradual changes in DC and CV characteristics depending on the dual-channel thicknesses. For this purpose, we use the aluminum-doped indium zinc tin oxide (AIZTO)/indium zinc oxide (IZO) dual-channel TFTs. The main goal of this paper is to find the main cause of the changes by light illumination in various dual-channel thicknesses.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134263509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543627
Cuicui Wang, Xue Meng, H. Lam, Hongjuan Lu, Shengdong Zhang
This work presents a new pixel circuit and driving scheme for active-matrix organic light-emitting diode (AMOLED) displays, where the OLED is under AC bias. The proposed pixel circuit consists of five thin film transistors (TFTs) and one capacitor. Due to the AC bias, the OLED is reverse biased during the non-emission period, which not only prevents the OLED from light emitting during the programming period to ensure a high contrast ratio displays; but also suppresses the OLED degradation and thus extends the lifetime of the AMOLED displays. It is verified that the proposed circuit can compensate for the threshold voltage variations of the driving TFT and the OLED.
{"title":"A new AC biased pixel circuit for active matrix organic light-emitting diode displays","authors":"Cuicui Wang, Xue Meng, H. Lam, Hongjuan Lu, Shengdong Zhang","doi":"10.1109/AM-FPD.2016.7543627","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543627","url":null,"abstract":"This work presents a new pixel circuit and driving scheme for active-matrix organic light-emitting diode (AMOLED) displays, where the OLED is under AC bias. The proposed pixel circuit consists of five thin film transistors (TFTs) and one capacitor. Due to the AC bias, the OLED is reverse biased during the non-emission period, which not only prevents the OLED from light emitting during the programming period to ensure a high contrast ratio displays; but also suppresses the OLED degradation and thus extends the lifetime of the AMOLED displays. It is verified that the proposed circuit can compensate for the threshold voltage variations of the driving TFT and the OLED.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130473001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543667
Pen-Cheng Wang, B. Wen, Tung-Yuan Lee, Pin-Hsuan Hung, H. Chen
This study presents an electrical characterization of multi-thin-film metal electrodes deposited on flexible substrates by using an automatic folding test system (AFTS). To quantize folding conditions, AFTS for folding function is utilized to control radii of curvature of the flexible substrates, folding times, and velocities. Additionally, AFTS measures the electrical characteristics of flexible substrates during folding test. As a result, the new technique successfully measures electrical characteristics of flexible polydimethylsiloxane (PDMS)/gold electrodes for analysis during the 0/cm to 0.5/cm curvature folding cycles. Inspection results of folding characteristics depicted on flexible displays help a designer or maker of flexible displays design useful and comfortable flexible electronic products.
{"title":"Investigation of electrical characteristics of multi-thin-film metal electrodes deposited on flexible polydimethylsiloxane substrates by using an automatic folding test system","authors":"Pen-Cheng Wang, B. Wen, Tung-Yuan Lee, Pin-Hsuan Hung, H. Chen","doi":"10.1109/AM-FPD.2016.7543667","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543667","url":null,"abstract":"This study presents an electrical characterization of multi-thin-film metal electrodes deposited on flexible substrates by using an automatic folding test system (AFTS). To quantize folding conditions, AFTS for folding function is utilized to control radii of curvature of the flexible substrates, folding times, and velocities. Additionally, AFTS measures the electrical characteristics of flexible substrates during folding test. As a result, the new technique successfully measures electrical characteristics of flexible polydimethylsiloxane (PDMS)/gold electrodes for analysis during the 0/cm to 0.5/cm curvature folding cycles. Inspection results of folding characteristics depicted on flexible displays help a designer or maker of flexible displays design useful and comfortable flexible electronic products.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126639345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543661
N. Yoshioka, A. Heya, Naoto Matuo, Yousuke Nakamura, Gakuhiko Yokomori, M. Yoshioka, K. Kohama, Kazuhiro Ito
The formation of nanocrystal silicon (nc-Si) in SiOx is one of the key technologies for the realization of high-quality solar cells. The SiOx films were deposited on a quartz substrate by a reactive sputtering. The Si/O ratio of the SiOx films were changed from 0.56 to 2.07. The nc-Si in SiOx film was characterized by Raman scattering spectroscopy. The Crystalline fractions of all samples after FLA were almost 100%. The size of nc-Si was estimated to 9 nm by Raman peak position. It is shown that the grain size of nc-Si was not changed by the Si/O ratio. On the other hand, the full width at half maximum (FWHM) of Raman peak due to crystal phase was changed by the Si/O ratio of SiOx film.
{"title":"Formation of nc-Si in SiOx by flash lamp anneling","authors":"N. Yoshioka, A. Heya, Naoto Matuo, Yousuke Nakamura, Gakuhiko Yokomori, M. Yoshioka, K. Kohama, Kazuhiro Ito","doi":"10.1109/AM-FPD.2016.7543661","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543661","url":null,"abstract":"The formation of nanocrystal silicon (nc-Si) in SiOx is one of the key technologies for the realization of high-quality solar cells. The SiOx films were deposited on a quartz substrate by a reactive sputtering. The Si/O ratio of the SiOx films were changed from 0.56 to 2.07. The nc-Si in SiOx film was characterized by Raman scattering spectroscopy. The Crystalline fractions of all samples after FLA were almost 100%. The size of nc-Si was estimated to 9 nm by Raman peak position. It is shown that the grain size of nc-Si was not changed by the Si/O ratio. On the other hand, the full width at half maximum (FWHM) of Raman peak due to crystal phase was changed by the Si/O ratio of SiOx film.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121223484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543629
Huan-Jie Gao, Yu-Hsiang Hung, Tien‐Lung Chiu, Yu-Chi Li, Jau-Jiun Huang, H. Ho, Chi-Fang Lin, Jiu-Haw Lee, M. Leung
A new organic host material, PCT comprising pyridine, carbazole and triazole moieties, was doped with a blue emitter bis[2-(4,6"difluorophenyl)pyridinato-C2,N](pico]inato)iridium(III) (FIrpic) to be an emitting layer (EML) of a phosphorescent organic light-emitting diodes device (PhOLED). With various FIrpic concentration (12%, 15% and 18% by volume ratio) in the EML, a series of high efficiency blue PhOLED was demonstrated showing the external quantum efficiency over 20%.
{"title":"New PCT host to achieve high efficiency blue phosphorescent organic light emitting diode","authors":"Huan-Jie Gao, Yu-Hsiang Hung, Tien‐Lung Chiu, Yu-Chi Li, Jau-Jiun Huang, H. Ho, Chi-Fang Lin, Jiu-Haw Lee, M. Leung","doi":"10.1109/AM-FPD.2016.7543629","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543629","url":null,"abstract":"A new organic host material, PCT comprising pyridine, carbazole and triazole moieties, was doped with a blue emitter bis[2-(4,6\"difluorophenyl)pyridinato-C2,N](pico]inato)iridium(III) (FIrpic) to be an emitting layer (EML) of a phosphorescent organic light-emitting diodes device (PhOLED). With various FIrpic concentration (12%, 15% and 18% by volume ratio) in the EML, a series of high efficiency blue PhOLED was demonstrated showing the external quantum efficiency over 20%.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116615856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543692
Itaru Raifuku, Y. Ishikawa, S. Ito, Y. Uraoka
In this study, we investigated the characteristics of perovskite solar cells under low illuminance conditions. As a result, open-circuit voltage of perovskite solar cells remained over 0.8V at 0.1% illumination of AM1.5. To further improvement, internal states of perovskite solar cells were investigated by impedance spectroscopy. As a result, it was indicated that mesoporous TiO2 is not suitable under low illuminance conditions.
{"title":"Internal resistance of perovskite solar cells under low illuminance conditions","authors":"Itaru Raifuku, Y. Ishikawa, S. Ito, Y. Uraoka","doi":"10.1109/AM-FPD.2016.7543692","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543692","url":null,"abstract":"In this study, we investigated the characteristics of perovskite solar cells under low illuminance conditions. As a result, open-circuit voltage of perovskite solar cells remained over 0.8V at 0.1% illumination of AM1.5. To further improvement, internal states of perovskite solar cells were investigated by impedance spectroscopy. As a result, it was indicated that mesoporous TiO2 is not suitable under low illuminance conditions.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131087499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543626
Bo‐Ru Yang
Manipulating the particles' movement within the micro-cavity has created a new category of reflective display, termed “Electro-Phoretic Display, (EPD).” The superior performances of EPD under sunlight ambience and the capability of fabricated with roll-to-roll process has make it as a very unique and critical technology. This paper intends to discuss the intriguing physics of how particles being charged, bistable, and operated for EPD applications; meanwhile, discussing the strategies for achieving full-color.
{"title":"Overview of design considerations for electrophoretic e-paper and strategies for achieving full-color","authors":"Bo‐Ru Yang","doi":"10.1109/AM-FPD.2016.7543626","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543626","url":null,"abstract":"Manipulating the particles' movement within the micro-cavity has created a new category of reflective display, termed “Electro-Phoretic Display, (EPD).” The superior performances of EPD under sunlight ambience and the capability of fabricated with roll-to-roll process has make it as a very unique and critical technology. This paper intends to discuss the intriguing physics of how particles being charged, bistable, and operated for EPD applications; meanwhile, discussing the strategies for achieving full-color.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124263081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543657
W. Yeh, S. Moriyama
A chevron-shaped cw-laser-induced single crystal growth in Si thin-film on rolled flexible substrate was proposed and demonstrated for roll-to-roll fabrication process. The substrate was bendable thin borosilicate glass with sputter deposited SiO2 and Si film, and was attached onto a rotating roll which rotated at a circumferential speed of 0.013 m/s during chevron-shaped cw-laser irradiation. Single grain growth was observed along laser scan direction.
{"title":"Growth of single crystal stripe in Si film on rolled flexible substrate by micro-chevron-shaped cw laser scanning","authors":"W. Yeh, S. Moriyama","doi":"10.1109/AM-FPD.2016.7543657","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543657","url":null,"abstract":"A chevron-shaped cw-laser-induced single crystal growth in Si thin-film on rolled flexible substrate was proposed and demonstrated for roll-to-roll fabrication process. The substrate was bendable thin borosilicate glass with sputter deposited SiO2 and Si film, and was attached onto a rotating roll which rotated at a circumferential speed of 0.013 m/s during chevron-shaped cw-laser irradiation. Single grain growth was observed along laser scan direction.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121568678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543630
Jau-Jiun Huang, Yu-Hsiang Hung, Lik-Ka Yun, M. Leung, Tien‐Lung Chiu, Jiu-Haw Lee
The two novel benzimidazole/carbazole hybrid ambipolar molecules, o-CbzDiBz and m-CbzDiBz, were synthesized as hosts for blue PHOLEDs. Bis[2-(4,6-diiluorophenyl)pyridinato-C2,N](picolinato)iridium(III) (FIrpic)-based devices can achieve 41.86 and 49.31 cd/A of current efficiency in o-CbzDiBz and m-CbzDiBz matrix, respectively.
{"title":"Novel benzimidazole/carbazole hybrid ambipolar molecules and application in PhOLEDs","authors":"Jau-Jiun Huang, Yu-Hsiang Hung, Lik-Ka Yun, M. Leung, Tien‐Lung Chiu, Jiu-Haw Lee","doi":"10.1109/AM-FPD.2016.7543630","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543630","url":null,"abstract":"The two novel benzimidazole/carbazole hybrid ambipolar molecules, o-CbzDiBz and m-CbzDiBz, were synthesized as hosts for blue PHOLEDs. Bis[2-(4,6-diiluorophenyl)pyridinato-C2,N](picolinato)iridium(III) (FIrpic)-based devices can achieve 41.86 and 49.31 cd/A of current efficiency in o-CbzDiBz and m-CbzDiBz matrix, respectively.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131712162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543608
Po-Syun Chen, Yen-Ting Liu, Chih-Lung Lin
This work proposes a bi-direction hydrogen amorphous silicon (a-Si:H) gate driver circuit, which can be properly applied to the active-matrix liquid-crystal displays with integrated touch panels. The fluctuations of display control signals increase the noise of the touch panel during touch sensing period. To solve this problem, the proposed circuit allows the LCDs to pause at any column until the touch sensing period is finished, and stores the charges in a pre-charge structure to prevent the long-term stress of driving TFT. A simulation confirms that the degradation of the pre-charge circuit has merely no effect to the output waveform.
{"title":"Novel bi-direction gate driver circuit for active-matrix LCDs with in-cell touch structures","authors":"Po-Syun Chen, Yen-Ting Liu, Chih-Lung Lin","doi":"10.1109/AM-FPD.2016.7543608","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543608","url":null,"abstract":"This work proposes a bi-direction hydrogen amorphous silicon (a-Si:H) gate driver circuit, which can be properly applied to the active-matrix liquid-crystal displays with integrated touch panels. The fluctuations of display control signals increase the noise of the touch panel during touch sensing period. To solve this problem, the proposed circuit allows the LCDs to pause at any column until the touch sensing period is finished, and stores the charges in a pre-charge structure to prevent the long-term stress of driving TFT. A simulation confirms that the degradation of the pre-charge circuit has merely no effect to the output waveform.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122970448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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