Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543621
Chang-Chun Lee
Fatigue behavior of multi-stacked films type OLED devices under a flexural load been greatly paid attention while the requirement of thinner and more flexible packaging structure. To enhance mechanical reliability of related critical components utilized in foregoing OLED architecture, a mechanical model of multi-layers structure is demonstrated and validated by nonlinear finite element analysis, exploring the impact of several concerned mechanical parameters within a whole OLED packaging. The results indicated that the thickness of PI substrate is a significant parameter to determine the bending stress of indium tin oxide film. It is found that the use of thicker and softer film could be able to reduce the stress of ITO conductive film.
{"title":"Factorial designs of multi-coatings for induced stresses of advanced flexible displays","authors":"Chang-Chun Lee","doi":"10.1109/AM-FPD.2016.7543621","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543621","url":null,"abstract":"Fatigue behavior of multi-stacked films type OLED devices under a flexural load been greatly paid attention while the requirement of thinner and more flexible packaging structure. To enhance mechanical reliability of related critical components utilized in foregoing OLED architecture, a mechanical model of multi-layers structure is demonstrated and validated by nonlinear finite element analysis, exploring the impact of several concerned mechanical parameters within a whole OLED packaging. The results indicated that the thickness of PI substrate is a significant parameter to determine the bending stress of indium tin oxide film. It is found that the use of thicker and softer film could be able to reduce the stress of ITO conductive film.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116066549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543649
Xiaoyu Ma, Fei Yu, W. Deng, Junkai Huang
Gate-leakage currents AlGaN/GaN high electron mobility transistors (HEMTs) have been studied. The reverse bias gate-leakage current is decomposed into three dominant components, namely, Fowler-Nordheim tunneling, trap-assisted-tunneling, and trap-assisted Frenkel-Poole emission. A physics-based model to calculate this current is given, which follows the experimental gate-leakage current characteristics closely over a wide range of bias and temperature.
{"title":"Physics-based modeling of gate-leakage current in AlGaN/GaN high electron mobility transistors","authors":"Xiaoyu Ma, Fei Yu, W. Deng, Junkai Huang","doi":"10.1109/AM-FPD.2016.7543649","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543649","url":null,"abstract":"Gate-leakage currents AlGaN/GaN high electron mobility transistors (HEMTs) have been studied. The reverse bias gate-leakage current is decomposed into three dominant components, namely, Fowler-Nordheim tunneling, trap-assisted-tunneling, and trap-assisted Frenkel-Poole emission. A physics-based model to calculate this current is given, which follows the experimental gate-leakage current characteristics closely over a wide range of bias and temperature.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"287 19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122914429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543651
Yu-Fu Wang, Sheng-Kuang Peng, Po-Kang Huang, Horng-Long Chen, W. Choua
In recent years, the electrical stability of organic devices is an essential issue in application of large integrated circuits. The properties of interface between semiconductor layer and dielectric layer play an important role to determine the electrical performance and memory effect of organic field-effect transistors. We propose some facile ways, in which the interface property could be modified, to overcome the stable issue. The electrical stability and photoelectric effect of organic transistors were successfully enhanced by using these interface engineering.
{"title":"Interface engineering for improving the electrical stability and photoelectric effects of organic memory transistors","authors":"Yu-Fu Wang, Sheng-Kuang Peng, Po-Kang Huang, Horng-Long Chen, W. Choua","doi":"10.1109/AM-FPD.2016.7543651","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543651","url":null,"abstract":"In recent years, the electrical stability of organic devices is an essential issue in application of large integrated circuits. The properties of interface between semiconductor layer and dielectric layer play an important role to determine the electrical performance and memory effect of organic field-effect transistors. We propose some facile ways, in which the interface property could be modified, to overcome the stable issue. The electrical stability and photoelectric effect of organic transistors were successfully enhanced by using these interface engineering.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133436749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543645
Chan-Yong Jeong, Hee-Joong Kim, Jeong-Hwan Lee, S. Bae, H. Kwon
In this work, we investigate the low-frequency noise (LFN) properties of p-type tin monoxide (SnO) thin-film transistors (TFTs). The LFN from the p-type SnO TFT is successfully interpreted by the correlated carrier number-mobility fluctuation model. The density of near-interface insulator traps that can exchange charge carriers with the underlying SnO channel layer is found to be 5.2 × 1021 eV-1cm-3, which is about one or two orders of magnitude higher than that of the n-type amorphous indium-gallium-zinc oxide TFTs. The high density of near-interface insulator trap from the SnO TFT is considered to be a result of the high degree of disorder of the SnO channel layer.
{"title":"1/f Noise characteristics of P-channel tin monoxide thin-film transistors","authors":"Chan-Yong Jeong, Hee-Joong Kim, Jeong-Hwan Lee, S. Bae, H. Kwon","doi":"10.1109/AM-FPD.2016.7543645","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543645","url":null,"abstract":"In this work, we investigate the low-frequency noise (LFN) properties of p-type tin monoxide (SnO) thin-film transistors (TFTs). The LFN from the p-type SnO TFT is successfully interpreted by the correlated carrier number-mobility fluctuation model. The density of near-interface insulator traps that can exchange charge carriers with the underlying SnO channel layer is found to be 5.2 × 1021 eV-1cm-3, which is about one or two orders of magnitude higher than that of the n-type amorphous indium-gallium-zinc oxide TFTs. The high density of near-interface insulator trap from the SnO TFT is considered to be a result of the high degree of disorder of the SnO channel layer.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131674226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543668
Taiyu Jin, Jeongjae Ryu, Hansaem Kang, K. No, S. Park
A novel pressure sensor based on indium gallium zinc oxide (IGZO) oxide TFT and strained piezoelectric polymer is demonstrated. Poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) is used as an organic piezoelectric material. The sensor demonstrate the possibility to be further used as a display polarizing film though a birefringence property showed by stretching the P(VDF-TrFE) film. Finally, the sensor shows a high stable and uniform signal to the pressure.
{"title":"Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor","authors":"Taiyu Jin, Jeongjae Ryu, Hansaem Kang, K. No, S. Park","doi":"10.1109/AM-FPD.2016.7543668","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543668","url":null,"abstract":"A novel pressure sensor based on indium gallium zinc oxide (IGZO) oxide TFT and strained piezoelectric polymer is demonstrated. Poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) is used as an organic piezoelectric material. The sensor demonstrate the possibility to be further used as a display polarizing film though a birefringence property showed by stretching the P(VDF-TrFE) film. Finally, the sensor shows a high stable and uniform signal to the pressure.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131908184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543662
M. Sasaki, M. Miyao, T. Sadoh
A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2%), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2%) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.
{"title":"Large-grain Sn-doped Ge (100) on insulator by aluminum-induced crystallization at low-temperature for flexible electronics","authors":"M. Sasaki, M. Miyao, T. Sadoh","doi":"10.1109/AM-FPD.2016.7543662","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543662","url":null,"abstract":"A low-temperature formation technique of Sn-doped Ge on insulator has been investigated by aluminum-induced crystallization using a-GeSn/Al stacked structures. For a-GeSn films (Sn concentration: 2%), the layer-exchange growth temperature is significantly decreased compared with a-Ge, which enables low temperature growth at 250°C. At such a low temperature, bulk nucleation of GeSn in Al layers is significantly suppressed, and (100)-oriented interface nucleation becomes dominant. On the other hand, growth rate becomes high by Sn-doping effects. As a result, formation of (100)-oriented large-grain (>10 μm) Sn-doped Ge (Sn concentration: 2%) crystals on insulating substrates becomes possible at a low temperature (250°C). This technique will be useful to realize advanced flexible electronics.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130900262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543653
Katsuya Kite, Shuhei Kitajima, T. Matsuda, M. Kimura, Mitsuo Tamura, Masahide Inoue
We have evaluated light and temperature dependences of transistor characteristics in n-type, p-type and pin-type poly-Si TFTs with and without infrared (IR) light illumination. It is found that light and temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, we confirmed that the light dependences with IR light illumination are much larger than the temperature dependences. Based on these results, we proposed three detection systems to proximity sense by the IR sensors using poly-Si TFTs.
{"title":"Evaluation of the infrared-ray sensors using poly-Si TFTs","authors":"Katsuya Kite, Shuhei Kitajima, T. Matsuda, M. Kimura, Mitsuo Tamura, Masahide Inoue","doi":"10.1109/AM-FPD.2016.7543653","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543653","url":null,"abstract":"We have evaluated light and temperature dependences of transistor characteristics in n-type, p-type and pin-type poly-Si TFTs with and without infrared (IR) light illumination. It is found that light and temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, we confirmed that the light dependences with IR light illumination are much larger than the temperature dependences. Based on these results, we proposed three detection systems to proximity sense by the IR sensors using poly-Si TFTs.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114861909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543654
Shuhei Kitajima, Katsuya Kito, T. Matsuda, M. Kimura, Masahide Inoue
We confirmed that photo-induced current in off region changes when we irradiate infrared light to N-type, P-type and PIN-type low-temperature poly-Si TFTs. In addition, we found that the photo-induced current is proportional to the gate width, whereas it does not depend on the gate length. We can indicate that it is possible to detect infrared light above certain intensity from the relationship between the photo-induced current and the dark current.
{"title":"Characteristic evaluation of photo-induced current by infrared light irradiation in low-temperature poly-Si TFT","authors":"Shuhei Kitajima, Katsuya Kito, T. Matsuda, M. Kimura, Masahide Inoue","doi":"10.1109/AM-FPD.2016.7543654","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543654","url":null,"abstract":"We confirmed that photo-induced current in off region changes when we irradiate infrared light to N-type, P-type and PIN-type low-temperature poly-Si TFTs. In addition, we found that the photo-induced current is proportional to the gate width, whereas it does not depend on the gate length. We can indicate that it is possible to detect infrared light above certain intensity from the relationship between the photo-induced current and the dark current.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124717661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543613
K. Matsumoto, R. Hayashi, Y. Kanai, Koichi Inoue, T. Ono
The sugar chain modified grapheme FET was applied to selectively detect the human type influenza virus and bird type influenza virus. Instead of the real virus, the pseud virus such as Lectin was used for the experiment for the safety. The human type pseud virus selectively reacts with the human type sugar chain which was modified on the grapheme surface and vise versa.
{"title":"Graphene field-effect transistor for biosensor","authors":"K. Matsumoto, R. Hayashi, Y. Kanai, Koichi Inoue, T. Ono","doi":"10.1109/AM-FPD.2016.7543613","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543613","url":null,"abstract":"The sugar chain modified grapheme FET was applied to selectively detect the human type influenza virus and bird type influenza virus. Instead of the real virus, the pseud virus such as Lectin was used for the experiment for the safety. The human type pseud virus selectively reacts with the human type sugar chain which was modified on the grapheme surface and vise versa.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124898796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-06DOI: 10.1109/AM-FPD.2016.7543611
S. Jin
For more than the last 50 years, tremendous researchers have managed to drive revolutionary technology by shrinking silicon transistors, the key building blocks for all computing technology. However, as transistors are approaching fundamental roadblocks which cannot still be in a fashion to be smaller from silicon, researchers are therefore looking for materials to replace silicon. In this sense, among a variety of candidates beyond silicon, single walled carbon nanotubes (SWNTs) has been regarded as one of viable options because of ideal electrostatic coupling coming from one dimensional structure, the ability to operate at low voltages, and their exceptional electrical-performance in devices less than 10 nm. However, the road to producing transistors from single-walled carbon nanotubes (SWNTs) has been hedged about heterogeneous electrical properties (i.e., semiconducting vs. metallic) and controllably positioning these tiny molecular cylinders (~1 nm diameter). To address this issue, one of the most fascinating methods has been reported as "thermocapillarity enabled purification (TcEP)" for obtaining arrays of highly purified semiconducting CNTs with its process scalability and compatibility with the state of the art Si technology. In this talk, we will overview key technologies of TcEP and address future aspects on electronic application based on pristine form of SWNTs after purification.
{"title":"Single-walled carbon nanotubes (SWNTs); history and future prospects for electronic applications","authors":"S. Jin","doi":"10.1109/AM-FPD.2016.7543611","DOIUrl":"https://doi.org/10.1109/AM-FPD.2016.7543611","url":null,"abstract":"For more than the last 50 years, tremendous researchers have managed to drive revolutionary technology by shrinking silicon transistors, the key building blocks for all computing technology. However, as transistors are approaching fundamental roadblocks which cannot still be in a fashion to be smaller from silicon, researchers are therefore looking for materials to replace silicon. In this sense, among a variety of candidates beyond silicon, single walled carbon nanotubes (SWNTs) has been regarded as one of viable options because of ideal electrostatic coupling coming from one dimensional structure, the ability to operate at low voltages, and their exceptional electrical-performance in devices less than 10 nm. However, the road to producing transistors from single-walled carbon nanotubes (SWNTs) has been hedged about heterogeneous electrical properties (i.e., semiconducting vs. metallic) and controllably positioning these tiny molecular cylinders (~1 nm diameter). To address this issue, one of the most fascinating methods has been reported as \"thermocapillarity enabled purification (TcEP)\" for obtaining arrays of highly purified semiconducting CNTs with its process scalability and compatibility with the state of the art Si technology. In this talk, we will overview key technologies of TcEP and address future aspects on electronic application based on pristine form of SWNTs after purification.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122857930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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