Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626353
H. Manning, S. Biswas, Shailja Kumar, J. Holmes, J. Boland
Abstrac t-Enginee ring smart-material s with emerge nt properti es requires designi ng and characte rizing systems with desirabl e behavio urs. Neurom orphic (brain-like) architectures require plasticity, where the strength of the connections and the time with which they decay can be modulated based on the magnitude and the repetition of the applied stimuli. This functionality is emulated in our complex nanowire network material through electrical resistive switching. The formation of nano-sized filamentary connections between overlapping wires across the network facilitates a controllable transition from a high resistance state to one (or more) lower resistance states with corresponding memory retention times. We report on the neuromorphic inspired behaviors that emerge from networks of metal nanowires coated with TiO2 shells.
{"title":"Neuromorphic- Inspired Behaviour in Core-Shell Nanowire Networks","authors":"H. Manning, S. Biswas, Shailja Kumar, J. Holmes, J. Boland","doi":"10.1109/NANO.2018.8626353","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626353","url":null,"abstract":"Abstrac t-Enginee ring smart-material s with emerge nt properti es requires designi ng and characte rizing systems with desirabl e behavio urs. Neurom orphic (brain-like) architectures require plasticity, where the strength of the connections and the time with which they decay can be modulated based on the magnitude and the repetition of the applied stimuli. This functionality is emulated in our complex nanowire network material through electrical resistive switching. The formation of nano-sized filamentary connections between overlapping wires across the network facilitates a controllable transition from a high resistance state to one (or more) lower resistance states with corresponding memory retention times. We report on the neuromorphic inspired behaviors that emerge from networks of metal nanowires coated with TiO2 shells.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122442057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626401
Amad Ul Hassen, S. Khokhar, B. Amin
Computer-aided synthesis benefits from algorithms that are capable of designing compact circuits. This paper is an attempt to improve area and time efficiency of crossbars synthesized using Free Binary Decision Diagrams (FBDDs). We report 13.7% and 6.2% improvement in area and time requirements of multiplier crossbars synthesized using FBDDs. We have used Dynamic Weight Heuristic (DWH) to make FBDDs more compact than the previous approach. Our approach is not multiplier specific; we have found it to perform better than the previous FBDD based synthesis for other RevLib benchmarks as well.
{"title":"Synthesis of Compact Crossbars for in-Memory Computing using Dynamic FBDDs","authors":"Amad Ul Hassen, S. Khokhar, B. Amin","doi":"10.1109/NANO.2018.8626401","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626401","url":null,"abstract":"Computer-aided synthesis benefits from algorithms that are capable of designing compact circuits. This paper is an attempt to improve area and time efficiency of crossbars synthesized using Free Binary Decision Diagrams (FBDDs). We report 13.7% and 6.2% improvement in area and time requirements of multiplier crossbars synthesized using FBDDs. We have used Dynamic Weight Heuristic (DWH) to make FBDDs more compact than the previous approach. Our approach is not multiplier specific; we have found it to perform better than the previous FBDD based synthesis for other RevLib benchmarks as well.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122763606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626346
Wei-Yi Chang, Xiaoning Jiang
Laser ultrasound patch composed of candle soot nanoparticles and polydimethylsiloxane (CS/PDMS) composites showed high photoacoustic transducer efficiency than other carbon based composites. In this study, we report a single fiber optic laser ultrasound transducer for minimal invasive ultrasound imaging and therapy.
{"title":"A Fiber Optic Laser Ultrasound Transducer using Candle Soot Nanoparticles/PDMS Composites","authors":"Wei-Yi Chang, Xiaoning Jiang","doi":"10.1109/NANO.2018.8626346","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626346","url":null,"abstract":"Laser ultrasound patch composed of candle soot nanoparticles and polydimethylsiloxane (CS/PDMS) composites showed high photoacoustic transducer efficiency than other carbon based composites. In this study, we report a single fiber optic laser ultrasound transducer for minimal invasive ultrasound imaging and therapy.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123496209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626391
W. Ensinger
The principles of fabrication and working mechanism of a (bio)molecular sensor based on a single nanopore in a polymer foil are described. Polymer foils are through-irradiated with a single ion of a heavy element at a particle accelerator. The ion damage zone in the polymer is chemically etched into a conical nanopore. The nanopore wall is functionalized by an appropriate coupling chemistry with a biorecognition unit. In an electrochemical cell, the foil acts as separation membrane. The electrolyte current flowing through the nanopore is measured as a function of the applied potential. In the presence of specific analyte molecules, which bioconjugate with the biorecognition unit, these ionic currents are changed. Thus, a highly sensitive nanosensor is available. The preparation and working principle of the nanosensor is described. As an example, results on the sensing of the alkali metal lithium, the small biomolecule glucose, and a protein (lectine) and are shown.
{"title":"iNAPO: an electrochemical molecule sensor based on a single ion conducting nanopore in polymer foil","authors":"W. Ensinger","doi":"10.1109/NANO.2018.8626391","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626391","url":null,"abstract":"The principles of fabrication and working mechanism of a (bio)molecular sensor based on a single nanopore in a polymer foil are described. Polymer foils are through-irradiated with a single ion of a heavy element at a particle accelerator. The ion damage zone in the polymer is chemically etched into a conical nanopore. The nanopore wall is functionalized by an appropriate coupling chemistry with a biorecognition unit. In an electrochemical cell, the foil acts as separation membrane. The electrolyte current flowing through the nanopore is measured as a function of the applied potential. In the presence of specific analyte molecules, which bioconjugate with the biorecognition unit, these ionic currents are changed. Thus, a highly sensitive nanosensor is available. The preparation and working principle of the nanosensor is described. As an example, results on the sensing of the alkali metal lithium, the small biomolecule glucose, and a protein (lectine) and are shown.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123587835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626400
Qi Chen, Yifan Wang, Hualv Zhang, Zewen Liu
In this paper, electrical characteristics of truncated-pyramidal silicon nanopores under various electrolyte concentrations is investigated. The current-voltage (I-V) characteristic of the silicon nanopore differs from that of other asymmetric nanopore, due to the silicon/electrolyte interface property and the pyramidal pore shape. Low frequency 1/f noise in the testing system is measured. In diluted electrolyte solutions, non-ohmic behaviors are found in the I-V curves, and the nonlinearity increases with the decreasing of the electrolyte concentration. I-V characteristics of small nanopores are more nonlinear than the large ones, due to the enhanced influence of the electrical double layer (EDL) in small nanopores immersed in the electrolyte solution. Furthermore, the ionic current rectification (ICR) property in the nanopore with its pore mouth modified by SEM-induced deposition of hydrocarbon compounds is found. The shape modification induced by the hydrocarbons is modeled and analyzed.
{"title":"Electrical characterization of truncated-pyramidal silicon nanopores in electrolyte solution","authors":"Qi Chen, Yifan Wang, Hualv Zhang, Zewen Liu","doi":"10.1109/NANO.2018.8626400","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626400","url":null,"abstract":"In this paper, electrical characteristics of truncated-pyramidal silicon nanopores under various electrolyte concentrations is investigated. The current-voltage (I-V) characteristic of the silicon nanopore differs from that of other asymmetric nanopore, due to the silicon/electrolyte interface property and the pyramidal pore shape. Low frequency 1/f noise in the testing system is measured. In diluted electrolyte solutions, non-ohmic behaviors are found in the I-V curves, and the nonlinearity increases with the decreasing of the electrolyte concentration. I-V characteristics of small nanopores are more nonlinear than the large ones, due to the enhanced influence of the electrical double layer (EDL) in small nanopores immersed in the electrolyte solution. Furthermore, the ionic current rectification (ICR) property in the nanopore with its pore mouth modified by SEM-induced deposition of hydrocarbon compounds is found. The shape modification induced by the hydrocarbons is modeled and analyzed.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121428216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626244
M. R. Rodríguez-Laguna, C. M. S. Torres, P. Gómez‐Romero, E. Chávez‐Ángel
Heat transfer fluids have been extensively used in both low-temperature and high temperature applications (e.g. microelectronics cooling and concentrated solar power). However, their low thermal conductivity is still a limit on performance. One way to enhance thermal properties is to disperse nanomaterials, such as graphene flakes in the base fluid. In this work, we have developed highly stable DMAc-graphene nanofluids with enhanced thermal properties. Furthermore, the displacement of several Raman bands as a function of graphene concentration in DMAc suggests that the solvent molecules are able to interact with graphene surfaces strongly
{"title":"On the Enhancement of the Thermal Conductivity of Graphene-Based Nanofluids","authors":"M. R. Rodríguez-Laguna, C. M. S. Torres, P. Gómez‐Romero, E. Chávez‐Ángel","doi":"10.1109/NANO.2018.8626244","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626244","url":null,"abstract":"Heat transfer fluids have been extensively used in both low-temperature and high temperature applications (e.g. microelectronics cooling and concentrated solar power). However, their low thermal conductivity is still a limit on performance. One way to enhance thermal properties is to disperse nanomaterials, such as graphene flakes in the base fluid. In this work, we have developed highly stable DMAc-graphene nanofluids with enhanced thermal properties. Furthermore, the displacement of several Raman bands as a function of graphene concentration in DMAc suggests that the solvent molecules are able to interact with graphene surfaces strongly","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122541154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626366
Mehadi Hasan Ziko, A. Koel
This work aims to understand the thermo-electromechanical behaviour of a silicon-based, chevron type thermal actuator (TA) in microelectromechanical systems (MEMS). The analysis presents simple analytical and numerical models of the chevron type thermal actuator (CTA). The analytical models are compared with the results of finite element models (FEM) to optimise the TA design parameters and validate thermo-electromechanical analysis. Moreover, analytical models for deflection allow for a much easier optimisation and more straightforward design process than with the finite element approach. Since the deflection of chevron thermal actuators depends on many variables, design guidelines are introduced to create an optimum, efficient chevron thermal actuator for the desired deflection under a specified external load. This study shows that the CT A-optimised beam length is 2000 $mu mathrm{m}$ and optimised inclination is 5°. Chevron type TA deflection will be 50% less for higher inclination angles greater than those between 5°-10°. The minimum voltage required for the displacement of 3.5 $mu mathrm{m}$ is 3.3 V and a power consumption of approximately 3 mW was obtained from this study. This optimised design and thermo-electromechanical analysis can be used to design and investigate the high switching response in a silicon-based chevron type TA.
{"title":"Theoretical and Numerical Investigations on a Silicon-based MEMS Chevron type thermal actuator","authors":"Mehadi Hasan Ziko, A. Koel","doi":"10.1109/NANO.2018.8626366","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626366","url":null,"abstract":"This work aims to understand the thermo-electromechanical behaviour of a silicon-based, chevron type thermal actuator (TA) in microelectromechanical systems (MEMS). The analysis presents simple analytical and numerical models of the chevron type thermal actuator (CTA). The analytical models are compared with the results of finite element models (FEM) to optimise the TA design parameters and validate thermo-electromechanical analysis. Moreover, analytical models for deflection allow for a much easier optimisation and more straightforward design process than with the finite element approach. Since the deflection of chevron thermal actuators depends on many variables, design guidelines are introduced to create an optimum, efficient chevron thermal actuator for the desired deflection under a specified external load. This study shows that the CT A-optimised beam length is 2000 $mu mathrm{m}$ and optimised inclination is 5°. Chevron type TA deflection will be 50% less for higher inclination angles greater than those between 5°-10°. The minimum voltage required for the displacement of 3.5 $mu mathrm{m}$ is 3.3 V and a power consumption of approximately 3 mW was obtained from this study. This optimised design and thermo-electromechanical analysis can be used to design and investigate the high switching response in a silicon-based chevron type TA.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122707561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626303
S. Porter, G. Atcheson, K. Rade, D. Maclaren, G. Schmidt, P. Stamenov, J. M. D. Coey
This work reports the successful fabrication of an all-oxide heteroepitaxial structure with a bilayer tunnel junction consisting of ferroelectric and ferrimagnetic layers. Each layer of the structure exhibits high crystallinity and well-defined interfaces. The transport properties of the junction are found to be well described by the characteristics of an asymmetric ferroelectric tunnel junction.
{"title":"FE Switching in SrRuO3/NiFe2O4/BaTiO3/LSMO Heterostructures on SrTiO3Substrates","authors":"S. Porter, G. Atcheson, K. Rade, D. Maclaren, G. Schmidt, P. Stamenov, J. M. D. Coey","doi":"10.1109/NANO.2018.8626303","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626303","url":null,"abstract":"This work reports the successful fabrication of an all-oxide heteroepitaxial structure with a bilayer tunnel junction consisting of ferroelectric and ferrimagnetic layers. Each layer of the structure exhibits high crystallinity and well-defined interfaces. The transport properties of the junction are found to be well described by the characteristics of an asymmetric ferroelectric tunnel junction.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124838280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626310
F. Palma, E. Cattaruzza, R. Rao, P. Riello
Silicon nanowires grown by the VLS mechanism resulted as efficient chemical and biological sensors as field effect transistors, nevertheless up to date a key point is the integration of the nanostructure in actual integrated circuit. The basic requirement appears the possibility to perform the deposition at low temperature, directly on the backside of the already finished integrated circuit. This would combine the high chemical sensitivity of the nanowires with the sensitivity, the elaboration capability, and the low production cost of CMOS technology. This paper presents a new technique which allows the grow of silicon nanowires at temperature lower than 200°C. MW CVD technique is used combined with nano-susceptors.
{"title":"CMOS Compatible, Low Temperature, growth of Silicon Nanowires by Microwave nano-susceptors","authors":"F. Palma, E. Cattaruzza, R. Rao, P. Riello","doi":"10.1109/NANO.2018.8626310","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626310","url":null,"abstract":"Silicon nanowires grown by the VLS mechanism resulted as efficient chemical and biological sensors as field effect transistors, nevertheless up to date a key point is the integration of the nanostructure in actual integrated circuit. The basic requirement appears the possibility to perform the deposition at low temperature, directly on the backside of the already finished integrated circuit. This would combine the high chemical sensitivity of the nanowires with the sensitivity, the elaboration capability, and the low production cost of CMOS technology. This paper presents a new technique which allows the grow of silicon nanowires at temperature lower than 200°C. MW CVD technique is used combined with nano-susceptors.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"168 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125987891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626396
Y. Jiang, N. C. Laurenciu, S. Cotofana
Graphene, due to its wealth of remarkable electronic properties, emerged as a potent post-Si forerunner for nanoelectronics. To enable the exploration and evaluation of potential graphene-based circuit designs, we propose a fast and accurate Verilog-A physics-based model of a 5-terminal trapezoidal Quantum Point Contact (QPC) Graphene Nano-Ribbon (GNR) structure with parametrizable geometry. The proposed model computes the GNR conductance based on the Non-Equilibrium Green's Function (NEGF)-Landauer formalism, via a Simulink model called from within the Verilog-A model. Furthermore, model accuracy and versatility are demonstrated by means of Simulink assisted Cadence Spectre simulation of a simple test case GNR-based circuit and a GNR-based 2-input XOR gate.
{"title":"Non-Equilibrium Green Function-based Verilog-A Graphene Nanoribbon Model","authors":"Y. Jiang, N. C. Laurenciu, S. Cotofana","doi":"10.1109/NANO.2018.8626396","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626396","url":null,"abstract":"Graphene, due to its wealth of remarkable electronic properties, emerged as a potent post-Si forerunner for nanoelectronics. To enable the exploration and evaluation of potential graphene-based circuit designs, we propose a fast and accurate Verilog-A physics-based model of a 5-terminal trapezoidal Quantum Point Contact (QPC) Graphene Nano-Ribbon (GNR) structure with parametrizable geometry. The proposed model computes the GNR conductance based on the Non-Equilibrium Green's Function (NEGF)-Landauer formalism, via a Simulink model called from within the Verilog-A model. Furthermore, model accuracy and versatility are demonstrated by means of Simulink assisted Cadence Spectre simulation of a simple test case GNR-based circuit and a GNR-based 2-input XOR gate.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121972898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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