Zhaopeng Wei, G. Jacquemod, Y. Leduc, E. Foucauld, J. Prouvée, B. Blampey
Analog integrated circuits never follow the Moore’s Law. This is particularly right for passive component. Due to the Short Channel Effect, we have to implement longer transistor, especially for analog cell. In this paper, we propose a new topology using some advantages of the FDSOI (Fully Depleted Silicon on Insulator) technology in order to reduce the size of analog cells. First, a current mirror was chosen to illustrate and validate a new design. Measured currents, with 35nm transistor length, have validated our new cross-coupled back-gate topology. Then, a VCRO (Voltage Controlled Ring Oscillator) based on complementary inverter is also used to remove passive components reducing the size of the circuit.
{"title":"Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits","authors":"Zhaopeng Wei, G. Jacquemod, Y. Leduc, E. Foucauld, J. Prouvée, B. Blampey","doi":"10.1155/2019/4578501","DOIUrl":"https://doi.org/10.1155/2019/4578501","url":null,"abstract":"Analog integrated circuits never follow the Moore’s Law. This is particularly right for passive component. Due to the Short Channel Effect, we have to implement longer transistor, especially for analog cell. In this paper, we propose a new topology using some advantages of the FDSOI (Fully Depleted Silicon on Insulator) technology in order to reduce the size of analog cells. First, a current mirror was chosen to illustrate and validate a new design. Measured currents, with 35nm transistor length, have validated our new cross-coupled back-gate topology. Then, a VCRO (Voltage Controlled Ring Oscillator) based on complementary inverter is also used to remove passive components reducing the size of the circuit.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2019-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/4578501","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46052153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Retracted: Design of a Narrow Bandwidth Bandpass Filter Using Compact Spiral Resonator with Chirality","authors":"","doi":"10.1155/2019/7262158","DOIUrl":"https://doi.org/10.1155/2019/7262158","url":null,"abstract":"","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/7262158","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43623636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Guangchen Liu, Jianwen Hu, G. Tian, Lie Xu, Shengtie Wang
Regarding PMSG-based wind turbine generation system, this paper proposes a supercapacitor energy storage unit (SCESU) which is connected in parallel with the DC-link of the back-to-back converter to enhance its high voltage ride through performance. The analysis of the operation and control for the grid-side converter and SCESU are conducted. Based on real time digital simulators (RTDS), a model and a Hardware-in-the-Loop (HiL) platform of PMSG-based wind turbine with SCESU is developed, and the simulation results show that the SCESU absorbs the imbalanced energy and the grid-side converter absorbs inductive reactive power during the period of voltage swell and verify the correctness and feasibility of the high voltage ride through control strategy.
{"title":"High Voltage Ride through Control of PMSG-Based Wind Turbine Generation System Using Supercapacitor","authors":"Guangchen Liu, Jianwen Hu, G. Tian, Lie Xu, Shengtie Wang","doi":"10.1155/2019/3489252","DOIUrl":"https://doi.org/10.1155/2019/3489252","url":null,"abstract":"Regarding PMSG-based wind turbine generation system, this paper proposes a supercapacitor energy storage unit (SCESU) which is connected in parallel with the DC-link of the back-to-back converter to enhance its high voltage ride through performance. The analysis of the operation and control for the grid-side converter and SCESU are conducted. Based on real time digital simulators (RTDS), a model and a Hardware-in-the-Loop (HiL) platform of PMSG-based wind turbine with SCESU is developed, and the simulation results show that the SCESU absorbs the imbalanced energy and the grid-side converter absorbs inductive reactive power during the period of voltage swell and verify the correctness and feasibility of the high voltage ride through control strategy.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2019-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/3489252","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48003047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel LTCC substrate manufacturing process based on 3D printing was investigated in this paper. Borosilicate glass-alumina substrates with controlled size and thickness were successfully manufactured using a self-developed dual-nozzle hybrid printing system. The printing parameters were carefully analyzed. The mechanical and dielectric properties of the printed substrate were examined. The results show that the printed substrates obtain smooth surface (Ra=0.92 μm), compact microstructure (relative density 93.7%), proper bending strength (156 mPa), and low dielectric constant and loss (Ɛr=6.2, 1/tanδ=0.0055, at 3 GHz). All of those qualify the printed glass–ceramic substrates to be used as potential LTCC substrates in the microwave applications. The proposed method could simplify the traditional LTCC technology.
{"title":"Preparation and Characterization of Printed LTCC Substrates for Microwave Devices","authors":"Yanfeng Shi, Yongqiang Chai, Shengbo Hu","doi":"10.1155/2019/6473587","DOIUrl":"https://doi.org/10.1155/2019/6473587","url":null,"abstract":"A novel LTCC substrate manufacturing process based on 3D printing was investigated in this paper. Borosilicate glass-alumina substrates with controlled size and thickness were successfully manufactured using a self-developed dual-nozzle hybrid printing system. The printing parameters were carefully analyzed. The mechanical and dielectric properties of the printed substrate were examined. The results show that the printed substrates obtain smooth surface (Ra=0.92 μm), compact microstructure (relative density 93.7%), proper bending strength (156 mPa), and low dielectric constant and loss (Ɛr=6.2, 1/tanδ=0.0055, at 3 GHz). All of those qualify the printed glass–ceramic substrates to be used as potential LTCC substrates in the microwave applications. The proposed method could simplify the traditional LTCC technology.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/6473587","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42437663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.
{"title":"A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics","authors":"E. Ryndin, A. Al-Saman, B. Konoplev","doi":"10.1155/2019/5135637","DOIUrl":"https://doi.org/10.1155/2019/5135637","url":null,"abstract":"A quasi-two-dimensional physics-based model of HEMT transistor without using any smoothing functions for joining the linear and saturation regions of current-voltage (I-V) characteristics was developed. Considering the intervalley transitions of electrons and the presence of holes in the channel of transistor, we calculated the nonuniform spatial distributions of the electrical field, electron temperature, and electron mobility within the channel. The model is in a good agreement with experimental data over the linear and saturation regions of operation. The model provides precise simulating of HEMT transistors and can be utilized as a tool for analysis and prediction of influence of the material parameters on device and circuit characteristics.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/5135637","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42551154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new concept of differential effective mobility is proposed. It characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge in MOSFET channel. It allows us to show that the effective mobility can be described by a local electric field approach and not entirely by an effective electric field model.
{"title":"New Concept of Differential Effective Mobility in MOS Transistors","authors":"K. Bennamane, G. Ghibaudo","doi":"10.1155/2019/5716230","DOIUrl":"https://doi.org/10.1155/2019/5716230","url":null,"abstract":"A new concept of differential effective mobility is proposed. It characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge in MOSFET channel. It allows us to show that the effective mobility can be described by a local electric field approach and not entirely by an effective electric field model.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2019-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/5716230","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47577348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study proposed the designs of two full-phase operation transresistance-mode (TRM) precision full-wave rectifiers. The first circuit consisted of a single operational transresistance amplifier (OTRA), four diodes, and a resistor. The second scheme was an OTRA combined with a full metal-oxide semiconductor field-effect transistor-based design, which is preferable for integrated circuit implementation because no passive components are used in the circuit topology. Based on our literature review, this is the first study that discussed a full-phase operation transresistance-mode precision full-wave rectifier consisting of a single OTRA and few passive components. In this paper, several previously reported precision full-wave rectifiers consisting of various active devices are first reviewed followed by the proposed OTRA-based transresistance-mode precision full-wave rectifiers and an analysis of nonideal effects. Furthermore, computer simulations and experimental results are presented to verify the validity of the proposed circuits, which were consistent with the theoretical predictions.
{"title":"Full-Phase Operation Transresistance-Mode Precision Full-Wave Rectifier Designs Using Single Operational Transresistance Amplifier","authors":"Hung-Chun Chien","doi":"10.1155/2019/1584724","DOIUrl":"https://doi.org/10.1155/2019/1584724","url":null,"abstract":"This study proposed the designs of two full-phase operation transresistance-mode (TRM) precision full-wave rectifiers. The first circuit consisted of a single operational transresistance amplifier (OTRA), four diodes, and a resistor. The second scheme was an OTRA combined with a full metal-oxide semiconductor field-effect transistor-based design, which is preferable for integrated circuit implementation because no passive components are used in the circuit topology. Based on our literature review, this is the first study that discussed a full-phase operation transresistance-mode precision full-wave rectifier consisting of a single OTRA and few passive components. In this paper, several previously reported precision full-wave rectifiers consisting of various active devices are first reviewed followed by the proposed OTRA-based transresistance-mode precision full-wave rectifiers and an analysis of nonideal effects. Furthermore, computer simulations and experimental results are presented to verify the validity of the proposed circuits, which were consistent with the theoretical predictions.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2019-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2019/1584724","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45736776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A planer millimetre-wave dual-band bandpass filter with multitransmission zeros is proposed for 5G application. This filter includes two dual-mode open-loop resonators. The U-shape nonresonating node is employed to generate an extra coupling path. Finally, a dual-band bandpass filter with five transmission zeros is obtained. The filter is fabricated and measured. Good agreement between simulation and measurement is obtained.
{"title":"Multitransmission Zero Dual-Band Bandpass Filter Using Nonresonating Node for 5G Millimetre-Wave Application","authors":"Liyun Shi, Jianjun Gao","doi":"10.1155/2018/7628598","DOIUrl":"https://doi.org/10.1155/2018/7628598","url":null,"abstract":"A planer millimetre-wave dual-band bandpass filter with multitransmission zeros is proposed for 5G application. This filter includes two dual-mode open-loop resonators. The U-shape nonresonating node is employed to generate an extra coupling path. Finally, a dual-band bandpass filter with five transmission zeros is obtained. The filter is fabricated and measured. Good agreement between simulation and measurement is obtained.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2018-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/7628598","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44111980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
O. Kuzichkin, D. I. Surzhik, G. S. Vasiliev, I. Kurilov, N. V. Dorofeev
The noise characteristics of multichannel systems of forming signals based on hybrid frequency synthesizers with automatic compensation of phase distortions of direct digital synthesizers, which are used in the composition of georadars with synthesized aperture, are investigated. It is established that the phase noise of the output signals of the formers at the 1 kHz detuning from the carrier oscillation at the output frequencies of the devices in the range from 500 to 3500 MHz is characterized by a level of minus 100 - minus 130 dB. In this case, the circuit of the signal former based on a hybrid frequency synthesizer with direct digital synthesizer as a reference oscillator of a phase locked loop is characterized by the worst noise characteristics but with the highest degree of autocompensation (about 13 dB). Conversely, the circuit of the signal former based on a hybrid frequency synthesizer with direct digital synthesizer as a support generator of the phase-locked loop has the best phase noises level from the considered variants of devices and least degree of autocompensation (about 6 dB).
{"title":"Analysis of Noise Characteristics of Multichannel Systems of the Formation of Signals of Georadars with Synthesized Aperture","authors":"O. Kuzichkin, D. I. Surzhik, G. S. Vasiliev, I. Kurilov, N. V. Dorofeev","doi":"10.1155/2018/9429863","DOIUrl":"https://doi.org/10.1155/2018/9429863","url":null,"abstract":"The noise characteristics of multichannel systems of forming signals based on hybrid frequency synthesizers with automatic compensation of phase distortions of direct digital synthesizers, which are used in the composition of georadars with synthesized aperture, are investigated. It is established that the phase noise of the output signals of the formers at the 1 kHz detuning from the carrier oscillation at the output frequencies of the devices in the range from 500 to 3500 MHz is characterized by a level of minus 100 - minus 130 dB. In this case, the circuit of the signal former based on a hybrid frequency synthesizer with direct digital synthesizer as a reference oscillator of a phase locked loop is characterized by the worst noise characteristics but with the highest degree of autocompensation (about 13 dB). Conversely, the circuit of the signal former based on a hybrid frequency synthesizer with direct digital synthesizer as a support generator of the phase-locked loop has the best phase noises level from the considered variants of devices and least degree of autocompensation (about 6 dB).","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2018-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/9429863","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45503003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, the analytical expressions of memristances, related parameters, and time domain behavioral analysis of the fractional order memristor have been proposed. Both DC with arbitrary delay and many AC waveforms including arbitrary phase sinusoidal and cosinusoidal waveform along with arbitrary periodic waveform have been taken into account. Unlike the previous works, the formerly ignored dimensional consistency has been taken into account and the analytical modelling of the boundary effect has been performed. Moreover, both transient and asymptotic behaviors of the fractional order memristor excited by AC waveform have been distinguished and analyzed. The effect of phase of AC waveform has also been studied. The influence of the fractional order to the areas of voltage-current hysteresis loop and memristance-current lissajous curve has also been clearly discussed and the usage of fractional order memristor in the memristor based circuit has also been demonstrated.
{"title":"On the Memristances, Parameters, and Analysis of the Fractional Order Memristor","authors":"R. Banchuin","doi":"10.1155/2018/3408480","DOIUrl":"https://doi.org/10.1155/2018/3408480","url":null,"abstract":"In this work, the analytical expressions of memristances, related parameters, and time domain behavioral analysis of the fractional order memristor have been proposed. Both DC with arbitrary delay and many AC waveforms including arbitrary phase sinusoidal and cosinusoidal waveform along with arbitrary periodic waveform have been taken into account. Unlike the previous works, the formerly ignored dimensional consistency has been taken into account and the analytical modelling of the boundary effect has been performed. Moreover, both transient and asymptotic behaviors of the fractional order memristor excited by AC waveform have been distinguished and analyzed. The effect of phase of AC waveform has also been studied. The influence of the fractional order to the areas of voltage-current hysteresis loop and memristance-current lissajous curve has also been clearly discussed and the usage of fractional order memristor in the memristor based circuit has also been demonstrated.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2018/3408480","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45421301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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