The analysis of random variation in the performance of Floating Gate Metal Oxide Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor based electronic device, operated in the subthreshold region defined in terms of its drain current (), has been proposed in this research. is of interest because it is directly measurable and can be the basis for determining the others. All related manufacturing process induced device level random variations, their statistical correlations, and low voltage/low power operating condition have been taken into account. The analysis result has been found to be very accurate since it can fit the nanometer level SPICE BSIM4 based reference with very high accuracy. By using such result, the strategies for minimizing variation in can be found and the analysis of variation in the circuit level parameter of any subthreshold FGMOSFET based circuit can be performed. So, the result of this research has been found to be beneficial to the variability aware design of subthreshold FGMOSFET based circuit.
{"title":"Analysis of Random Variation in Subthreshold FGMOSFET","authors":"R. Banchuin","doi":"10.1155/2016/3741250","DOIUrl":"https://doi.org/10.1155/2016/3741250","url":null,"abstract":"The analysis of random variation in the performance of Floating Gate Metal Oxide Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor based electronic device, operated in the subthreshold region defined in terms of its drain current (), has been proposed in this research. is of interest because it is directly measurable and can be the basis for determining the others. All related manufacturing process induced device level random variations, their statistical correlations, and low voltage/low power operating condition have been taken into account. The analysis result has been found to be very accurate since it can fit the nanometer level SPICE BSIM4 based reference with very high accuracy. By using such result, the strategies for minimizing variation in can be found and the analysis of variation in the circuit level parameter of any subthreshold FGMOSFET based circuit can be performed. So, the result of this research has been found to be beneficial to the variability aware design of subthreshold FGMOSFET based circuit.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-10"},"PeriodicalIF":0.4,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/3741250","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64345738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhenmin Zhu, Ruichao Song, Hui Luo, Jun Xu, Shiming Chen
Color measurement by the colorized vision system is a superior method to achieve the evaluation of color objectively and continuously. However, the accuracy of color measurement is influenced by the spectral responses of digital sensor and the spectral mismatch of illumination. In this paper, two-color vision system illuminated by digital sensor and LED array, respectively, is presented. The Polynomial-Based Regression method is applied to solve the problem of color calibration in the sRGB and color spaces. By mapping the tristimulus values from RGB to sRGB color space, color difference between the estimated values and the reference values is less than . Additionally, the mapping matrix has proved a better performance in reducing the color difference, and it is introduced subsequently into the colorized vision system proposed for a better color measurement. Necessarily, the printed matter of clothes and the colored ceramic tile are chosen as the application experiment samples of our colorized vision system. As shown in the experimental data, the average color difference of images is less than . It indicates that a better performance of color measurement is obtained via the colorized vision system proposed.
{"title":"Color Calibration for Colorized Vision System with Digital Sensor and LED Array Illuminator","authors":"Zhenmin Zhu, Ruichao Song, Hui Luo, Jun Xu, Shiming Chen","doi":"10.1155/2016/7467165","DOIUrl":"https://doi.org/10.1155/2016/7467165","url":null,"abstract":"Color measurement by the colorized vision system is a superior method to achieve the evaluation of color objectively and continuously. However, the accuracy of color measurement is influenced by the spectral responses of digital sensor and the spectral mismatch of illumination. In this paper, two-color vision system illuminated by digital sensor and LED array, respectively, is presented. The Polynomial-Based Regression method is applied to solve the problem of color calibration in the sRGB and color spaces. By mapping the tristimulus values from RGB to sRGB color space, color difference between the estimated values and the reference values is less than . Additionally, the mapping matrix has proved a better performance in reducing the color difference, and it is introduced subsequently into the colorized vision system proposed for a better color measurement. Necessarily, the printed matter of clothes and the colored ceramic tile are chosen as the application experiment samples of our colorized vision system. As shown in the experimental data, the average color difference of images is less than . It indicates that a better performance of color measurement is obtained via the colorized vision system proposed.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-16"},"PeriodicalIF":0.4,"publicationDate":"2016-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/7467165","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64521930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yong-Heng Shang, Hui Xu, Jiongjiong Mo, Zhiyu Wang, Xiuqin Xu, Z. Tu, X. Zhang, H. Zheng, W. Chen, Faxin Yu
A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz. A 20 dBm 1 dB-compression-point output power and 40% efficiency are achieved. A novel thermal reliability analysis method based on ICEPAK is proposed also to evaluate its thermal characteristic. The test result by using a QFI InfraScope™ infrared imaging system is compared with the simulation result. It agrees well with an accuracy within ±1°C differences, which reflects the advantages of the thermal analysis method with respect to accuracy and convenience for use.
{"title":"The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching","authors":"Yong-Heng Shang, Hui Xu, Jiongjiong Mo, Zhiyu Wang, Xiuqin Xu, Z. Tu, X. Zhang, H. Zheng, W. Chen, Faxin Yu","doi":"10.1155/2016/6295405","DOIUrl":"https://doi.org/10.1155/2016/6295405","url":null,"abstract":"A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz. A 20 dBm 1 dB-compression-point output power and 40% efficiency are achieved. A novel thermal reliability analysis method based on ICEPAK is proposed also to evaluate its thermal characteristic. The test result by using a QFI InfraScope™ infrared imaging system is compared with the simulation result. It agrees well with an accuracy within ±1°C differences, which reflects the advantages of the thermal analysis method with respect to accuracy and convenience for use.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-7"},"PeriodicalIF":0.4,"publicationDate":"2016-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/6295405","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64469487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has evolved from the field-induced magnetic switching (FIMS) technique to the spin-transfer torque (STT) switching technique. Additionally, material technology that induces perpendicular magnetic anisotropy (PMA) facilitates low-power operation through the reduction of the switching current density. In this paper, the modeling of magnetic tunnel junctions (MTJs) is reviewed. Modeling methods and models of MTJ characteristics are classified into two groups, macromodels and behavioral models, and the most important characteristics of MTJs, the voltage-dependent MTJ resistance and the switching behavior, are compared. To represent the voltage dependency of MTJ resistance, some models are based on physical mechanisms, such as Landau-Lifshitz-Gilbert (LLG) equation or voltage-dependent conductance. Some behavioral models are constructed by adding fitting parameters or introducing new physical parameters to represent the complex switching behavior of an MTJ over a wide range of input current conditions. Other models that are not based on physical mechanisms are implemented by simply fitting to experimental data.
{"title":"A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation","authors":"H. Lim, Seungjun Lee, Hyungsoon Shin","doi":"10.1155/2016/3858621","DOIUrl":"https://doi.org/10.1155/2016/3858621","url":null,"abstract":"Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has evolved from the field-induced magnetic switching (FIMS) technique to the spin-transfer torque (STT) switching technique. Additionally, material technology that induces perpendicular magnetic anisotropy (PMA) facilitates low-power operation through the reduction of the switching current density. In this paper, the modeling of magnetic tunnel junctions (MTJs) is reviewed. Modeling methods and models of MTJ characteristics are classified into two groups, macromodels and behavioral models, and the most important characteristics of MTJs, the voltage-dependent MTJ resistance and the switching behavior, are compared. To represent the voltage dependency of MTJ resistance, some models are based on physical mechanisms, such as Landau-Lifshitz-Gilbert (LLG) equation or voltage-dependent conductance. Some behavioral models are constructed by adding fitting parameters or introducing new physical parameters to represent the complex switching behavior of an MTJ over a wide range of input current conditions. Other models that are not based on physical mechanisms are implemented by simply fitting to experimental data.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-12"},"PeriodicalIF":0.4,"publicationDate":"2016-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/3858621","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64352892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Corrigendum to “Analysis of the Coupling Coefficient in Inductive Energy Transfer Systems”","authors":"Rafael Mendes Duarte, Gordana Klaric Felic","doi":"10.1155/2016/5929347","DOIUrl":"https://doi.org/10.1155/2016/5929347","url":null,"abstract":"","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-1"},"PeriodicalIF":0.4,"publicationDate":"2016-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/5929347","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64447053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A wide-band microstrip bandpass filter (BPF) based on the improved composite right/left-handed transmission line (CRLH-TL) structure is presented in this paper. Compared to the traditional CRLH-TL with via hole, the improved one is an all-planar structure, which owns the advantage of fabrication and loss. The equivalent lossless LC circuit model of the proposed structure is established. EM software Sonnet is adopted to design the wide-band filter with bandwidth of 1.4 GHz (from 1.9 GHz to 3.3 GHz). The circuit occupies only 20.6 × 12.8 mm2. Finally, the fabrication and measurement are implemented. A good agreement between simulation and measured results verifies the validity of the design methodology.
{"title":"Design of Wide-Band Bandpass Filter Using Composite Right/Left-Handed Transmission Line Structure","authors":"Baoping Ren, Haiwen Liu, X. Guan, Pin Wen, Xiang Xiao, Zhewang Ma","doi":"10.1155/2016/6532010","DOIUrl":"https://doi.org/10.1155/2016/6532010","url":null,"abstract":"A wide-band microstrip bandpass filter (BPF) based on the improved composite right/left-handed transmission line (CRLH-TL) structure is presented in this paper. Compared to the traditional CRLH-TL with via hole, the improved one is an all-planar structure, which owns the advantage of fabrication and loss. The equivalent lossless LC circuit model of the proposed structure is established. EM software Sonnet is adopted to design the wide-band filter with bandwidth of 1.4 GHz (from 1.9 GHz to 3.3 GHz). The circuit occupies only 20.6 × 12.8 mm2. Finally, the fabrication and measurement are implemented. A good agreement between simulation and measured results verifies the validity of the design methodology.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-5"},"PeriodicalIF":0.4,"publicationDate":"2016-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/6532010","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64483248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Pham, Thang Nguyen, L. Pham-Nguyen, H. Sakai, T. T. Dao
We have demonstrated a method for using proper models of pentacene P-channel and fullerene N-channel thin-film transistors (TFTs) in order to design and simulate organic integrated circuits. Initially, the transistors were fabricated, and we measured their main physical and electrical parameters. Then, these organic TFTs (OTFTs) were modeled with support of an organic process design kit (OPDK) added in Cadence. The key specifications of the modeled elements were extracted from measured data, whereas the fitting ones were elected to replicate experimental curves. The simulating process proves that frequency responses of the TFTs cover all biosignal frequency ranges; hence, it is reasonable to deploy the elements to design integrated circuits used in biomedical applications. Complying with complementary rules, the organic circuits work properly, including logic gates, flip-flops, comparators, and analog-to-digital converters (ADCs) as well. The proposed successive-approximation-register (SAR) ADC consumes a power of 883.7 µW and achieves an ENOB of 5.05 bits, a SNR of 32.17 dB at a supply voltage of 10 V, and a sampling frequency of about 2 KHz.
{"title":"Design and Simulation of a 6-Bit Successive-Approximation ADC Using Modeled Organic Thin-Film Transistors","authors":"H. Pham, Thang Nguyen, L. Pham-Nguyen, H. Sakai, T. T. Dao","doi":"10.1155/2016/7201760","DOIUrl":"https://doi.org/10.1155/2016/7201760","url":null,"abstract":"We have demonstrated a method for using proper models of pentacene P-channel and fullerene N-channel thin-film transistors (TFTs) in order to design and simulate organic integrated circuits. Initially, the transistors were fabricated, and we measured their main physical and electrical parameters. Then, these organic TFTs (OTFTs) were modeled with support of an organic process design kit (OPDK) added in Cadence. The key specifications of the modeled elements were extracted from measured data, whereas the fitting ones were elected to replicate experimental curves. The simulating process proves that frequency responses of the TFTs cover all biosignal frequency ranges; hence, it is reasonable to deploy the elements to design integrated circuits used in biomedical applications. Complying with complementary rules, the organic circuits work properly, including logic gates, flip-flops, comparators, and analog-to-digital converters (ADCs) as well. The proposed successive-approximation-register (SAR) ADC consumes a power of 883.7 µW and achieves an ENOB of 5.05 bits, a SNR of 32.17 dB at a supply voltage of 10 V, and a sampling frequency of about 2 KHz.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-11"},"PeriodicalIF":0.4,"publicationDate":"2016-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/7201760","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64508966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Pandey, Bharat Choudhary, K. Gupta, Ankit Mittal
This paper proposes new positive feedback source coupled logic (PFSCL) tristate buffers suited to bus applications. The proposed buffers use switch to attain high impedance state and modify the load or the current source section. An interesting consequence of this is overall reduction in the power consumption. The proposed tristate buffers consume half the power compared to the available switch based counterpart. The issues with available PFSCL tristate buffers based bus implementation are identified and benefits of employing the proposed tristate buffer topologies are put forward. SPICE simulation results using TSMC 180 nm CMOS technology parameters are included to support the theoretical formulations. The performance of proposed tristate buffer topologies is examined on the basis of propagation delay, output enable time, and power consumption. It is found that one of the proposed tristate buffer topology outperforms the others in terms of all the performance parameters. An examination of behavior of available and the proposed PFSCL tristate buffer topologies under parameter variations and mismatch shows a maximum variation of 14%.
{"title":"Bus Implementation Using New Low Power PFSCL Tristate Buffers","authors":"N. Pandey, Bharat Choudhary, K. Gupta, Ankit Mittal","doi":"10.1155/2016/4517292","DOIUrl":"https://doi.org/10.1155/2016/4517292","url":null,"abstract":"This paper proposes new positive feedback source coupled logic (PFSCL) tristate buffers suited to bus applications. The proposed buffers use switch to attain high impedance state and modify the load or the current source section. An interesting consequence of this is overall reduction in the power consumption. The proposed tristate buffers consume half the power compared to the available switch based counterpart. The issues with available PFSCL tristate buffers based bus implementation are identified and benefits of employing the proposed tristate buffer topologies are put forward. SPICE simulation results using TSMC 180 nm CMOS technology parameters are included to support the theoretical formulations. The performance of proposed tristate buffer topologies is examined on the basis of propagation delay, output enable time, and power consumption. It is found that one of the proposed tristate buffer topology outperforms the others in terms of all the performance parameters. An examination of behavior of available and the proposed PFSCL tristate buffer topologies under parameter variations and mismatch shows a maximum variation of 14%.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-8"},"PeriodicalIF":0.4,"publicationDate":"2016-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/4517292","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64385781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jorge L. Gonzalez, R. Moreno, J. C. Cruz, D. Vázquez
A reconfigurable low-noise amplifier (LNA) with digitally controllable gain and power consumption is presented. This architecture allows increasing power consumption only when required, that is, to improve LNA’s radiofrequency performance at extreme communication-channel conditions and/or to counteract the effect of process, voltage, and temperature variations. The proposed design leads to significant power saving when a relaxed operation is acceptable. The LNA is implemented in a 130 nm 1.2 V CMOS technology for a 2.4 GHz IEEE-802.15.4 application. Simulated LNA performance (taking into account the worst cases under process variations) is comparable to recently published works.
提出了一种增益和功耗数字可控的可重构低噪声放大器。这种架构只允许在需要时增加功耗，也就是说，在极端通信信道条件下提高LNA的射频性能和/或抵消工艺、电压和温度变化的影响。当可接受放松操作时，所建议的设计可显著节省电力。LNA采用130 nm 1.2 V CMOS技术实现，适用于2.4 GHz IEEE-802.15.4应用。模拟的LNA性能(考虑到过程变化下的最坏情况)与最近发表的作品相当。
{"title":"Energy-Aware Low-Power CMOS LNA with Process-Variations Management","authors":"Jorge L. Gonzalez, R. Moreno, J. C. Cruz, D. Vázquez","doi":"10.1155/2016/8351406","DOIUrl":"https://doi.org/10.1155/2016/8351406","url":null,"abstract":"A reconfigurable low-noise amplifier (LNA) with digitally controllable gain and power consumption is presented. This architecture allows increasing power consumption only when required, that is, to improve LNA’s radiofrequency performance at extreme communication-channel conditions and/or to counteract the effect of process, voltage, and temperature variations. The proposed design leads to significant power saving when a relaxed operation is acceptable. The LNA is implemented in a 130 nm 1.2 V CMOS technology for a 2.4 GHz IEEE-802.15.4 application. Simulated LNA performance (taking into account the worst cases under process variations) is comparable to recently published works.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-10"},"PeriodicalIF":0.4,"publicationDate":"2016-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/8351406","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64563924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Transformerless photovoltaic (PV) power system is very promising due to its low cost, small size, and high efficiency. One of its most important issues is how to prevent the common mode leakage current. In order to solve the problem, a new inverter is proposed in this paper. The system common mode model is established, and the four operation modes of the inverter are analyzed. It reveals that the common mode voltage can be kept constant, and consequently the leakage current can be suppressed. Finally, the experimental tests are conducted. The experimental results verify the effectiveness of the proposed solution.
{"title":"A Novel Inverter Topology for Single-Phase Transformerless PV System","authors":"H. Cao","doi":"10.1155/2016/1962438","DOIUrl":"https://doi.org/10.1155/2016/1962438","url":null,"abstract":"Transformerless photovoltaic (PV) power system is very promising due to its low cost, small size, and high efficiency. One of its most important issues is how to prevent the common mode leakage current. In order to solve the problem, a new inverter is proposed in this paper. The system common mode model is established, and the four operation modes of the inverter are analyzed. It reveals that the common mode voltage can be kept constant, and consequently the leakage current can be suppressed. Finally, the experimental tests are conducted. The experimental results verify the effectiveness of the proposed solution.","PeriodicalId":43355,"journal":{"name":"Active and Passive Electronic Components","volume":"2016 1","pages":"1-6"},"PeriodicalIF":0.4,"publicationDate":"2016-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1155/2016/1962438","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"64253627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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