Pub Date : 2024-03-01Epub Date: 2022-10-26DOI: 10.1177/11297298221131395
Yidan Chen, Linfang Zhao, Chang Liu
A large number of venipunctures are placed on the dorsal of the hand, and it is suitable for the majority of patients with the advantage of few complications. Here, the ulnar nerve on the dorsal was injured during peripheral intravenous catheter insertion, and a painful traumatic neuroma was discovered a week later. Through oral medication and topical lidocaine medicated plaster, the patient's pain is greatly reduced, and allowed to engage in nearly all activities. Knowledge of this complication may help with its recognition and early treatment.
{"title":"Venipuncture-related traumatic neuroma of the ulnar nerve on the dorsal of a hand: A case report.","authors":"Yidan Chen, Linfang Zhao, Chang Liu","doi":"10.1177/11297298221131395","DOIUrl":"10.1177/11297298221131395","url":null,"abstract":"<p><p>A large number of venipunctures are placed on the dorsal of the hand, and it is suitable for the majority of patients with the advantage of few complications. Here, the ulnar nerve on the dorsal was injured during peripheral intravenous catheter insertion, and a painful traumatic neuroma was discovered a week later. Through oral medication and topical lidocaine medicated plaster, the patient's pain is greatly reduced, and allowed to engage in nearly all activities. Knowledge of this complication may help with its recognition and early treatment.</p>","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"22 1","pages":"663-665"},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84609714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-01-01Epub Date: 2016-10-04DOI: 10.1007/s00018-016-2392-x
Olga Zegarra-Moran, Luis J V Galietta
CFTR protein is an ion channel regulated by cAMP-dependent phosphorylation and expressed in many types of epithelial cells. CFTR-mediated chloride and bicarbonate secretion play an important role in the respiratory and gastrointestinal systems. Pharmacological modulators of CFTR represent promising drugs for a variety of diseases. In particular, correctors and potentiators may restore the activity of CFTR in cystic fibrosis patients. Potentiators are also potentially useful to improve mucociliary clearance in patients with chronic obstructive pulmonary disease. On the other hand, CFTR inhibitors may be useful to block fluid and electrolyte loss in secretory diarrhea and slow down the progression of polycystic kidney disease.
{"title":"CFTR pharmacology.","authors":"Olga Zegarra-Moran, Luis J V Galietta","doi":"10.1007/s00018-016-2392-x","DOIUrl":"10.1007/s00018-016-2392-x","url":null,"abstract":"<p><p>CFTR protein is an ion channel regulated by cAMP-dependent phosphorylation and expressed in many types of epithelial cells. CFTR-mediated chloride and bicarbonate secretion play an important role in the respiratory and gastrointestinal systems. Pharmacological modulators of CFTR represent promising drugs for a variety of diseases. In particular, correctors and potentiators may restore the activity of CFTR in cystic fibrosis patients. Potentiators are also potentially useful to improve mucociliary clearance in patients with chronic obstructive pulmonary disease. On the other hand, CFTR inhibitors may be useful to block fluid and electrolyte loss in secretory diarrhea and slow down the progression of polycystic kidney disease.</p>","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"27 1","pages":"117-128"},"PeriodicalIF":8.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11107536/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84545286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-30DOI: 10.1109/TCAPT.2010.2095051
M. Arik, A. Bar-Cohen, A. Pautsch
{"title":"Editorial For a Brighter Future: Solid State Lighting","authors":"M. Arik, A. Bar-Cohen, A. Pautsch","doi":"10.1109/TCAPT.2010.2095051","DOIUrl":"https://doi.org/10.1109/TCAPT.2010.2095051","url":null,"abstract":"","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"33 1","pages":"666-667"},"PeriodicalIF":0.0,"publicationDate":"2010-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TCAPT.2010.2095051","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62520993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/TCAPT.2009.2032097
B. Yan, J. You, N. Tran, Yongzhi He, F. Shi
In this paper, the influence of the die attach adhesive (DAA) layer on the thermal performance of high power light emitting diodes was first investigated by using finite element analysis, and some key results were verified by the experimental data. Effective thermal management of the studied light emitting diode package can be achieved by selecting a DAA material with a proper thermal conductivity and by manipulating the geometry parameters of the DAA layer, such as the DAA area, and the bond-line thickness. The significance of DAA thermal conductivity to heat dissipation was further demonstrated by an analysis of the bottleneck to heat transfer.
{"title":"Influence of Die Attach Layer on Thermal Performance of High Power Light Emitting Diodes","authors":"B. Yan, J. You, N. Tran, Yongzhi He, F. Shi","doi":"10.1109/TCAPT.2009.2032097","DOIUrl":"https://doi.org/10.1109/TCAPT.2009.2032097","url":null,"abstract":"In this paper, the influence of the die attach adhesive (DAA) layer on the thermal performance of high power light emitting diodes was first investigated by using finite element analysis, and some key results were verified by the experimental data. Effective thermal management of the studied light emitting diode package can be achieved by selecting a DAA material with a proper thermal conductivity and by manipulating the geometry parameters of the DAA layer, such as the DAA area, and the bond-line thickness. The significance of DAA thermal conductivity to heat dissipation was further demonstrated by an analysis of the bottleneck to heat transfer.","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"33 1","pages":"722-727"},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TCAPT.2009.2032097","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62519653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-29DOI: 10.1109/TCAPT.2010.2060340
P. Misra, J. Nagaraju
This paper describes the electrical contact resistance (ECR) measurements made on thin gold plated (gold plating of ≤ 0.5 μm with a Ni underlayer of ~2 μm) oxygen free high conductivity (OFHC) Cu contacts in vacuum environment. ECR in gold plated OFHC Cu contacts is found to be slightly higher than that in bare OFHC Cu contacts. Even though gold is a softer material than copper, the relatively high ECR values observed in gold plated contacts are mainly due to the higher hardness and electrical resistivity of the underlying Ni layer. It is well known that ECR is directly related to plating factor, which increases with increasing coating thickness when the electrical resistivity of coating material is more than that of substrate. Surprisingly, in the present case it is found that the ECR decreases with increasing gold layer thickness on OFHC Cu substrate (gold has higher electrical resistivity than OFHC Cu). It is analytically demonstrated from the topography and microhardness measurements results that this peculiar behavior is associated with thin gold platings, where the changes in surface roughness and microhardness with increasing layer thickness overshadow the effect of plating factor on ECR.
{"title":"Electrical Contact Resistance in Thin $({leq}{rm 0.5}~mu{rm m})$ Gold Plated Contacts: Effect of Gold Plating Thickness","authors":"P. Misra, J. Nagaraju","doi":"10.1109/TCAPT.2010.2060340","DOIUrl":"https://doi.org/10.1109/TCAPT.2010.2060340","url":null,"abstract":"This paper describes the electrical contact resistance (ECR) measurements made on thin gold plated (gold plating of ≤ 0.5 μm with a Ni underlayer of ~2 μm) oxygen free high conductivity (OFHC) Cu contacts in vacuum environment. ECR in gold plated OFHC Cu contacts is found to be slightly higher than that in bare OFHC Cu contacts. Even though gold is a softer material than copper, the relatively high ECR values observed in gold plated contacts are mainly due to the higher hardness and electrical resistivity of the underlying Ni layer. It is well known that ECR is directly related to plating factor, which increases with increasing coating thickness when the electrical resistivity of coating material is more than that of substrate. Surprisingly, in the present case it is found that the ECR decreases with increasing gold layer thickness on OFHC Cu substrate (gold has higher electrical resistivity than OFHC Cu). It is analytically demonstrated from the topography and microhardness measurements results that this peculiar behavior is associated with thin gold platings, where the changes in surface roughness and microhardness with increasing layer thickness overshadow the effect of plating factor on ECR.","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"41 1","pages":"830-835"},"PeriodicalIF":0.0,"publicationDate":"2010-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TCAPT.2010.2060340","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62520340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-29DOI: 10.1109/TCAPT.2010.2078350
M. Pecht, L. Zuga
This editorial presents a case for the development of cohesive and non-partisan industrial and S&T policies that will foster engagement with other countries in the development of S&T. Examples of China and the U.S. are presented.
{"title":"Editorial - Science, Technology, and Industrial Policy","authors":"M. Pecht, L. Zuga","doi":"10.1109/TCAPT.2010.2078350","DOIUrl":"https://doi.org/10.1109/TCAPT.2010.2078350","url":null,"abstract":"This editorial presents a case for the development of cohesive and non-partisan industrial and S&T policies that will foster engagement with other countries in the development of S&T. Examples of China and the U.S. are presented.","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"33 1","pages":"836-839"},"PeriodicalIF":0.0,"publicationDate":"2010-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TCAPT.2010.2078350","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62520925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-22DOI: 10.1109/TCAPT.2010.2077737
J. Urbas
It was experimentally shown that a glowing connection can develop in an electrical switch at a terminal connection comprised of a connector that utilizes a spring action against a conductor to provide electrical contact in household electrical appliances where vibration exists, and when the connection is loose. This can happen at a current flow such as 0.6 Arms at 120-V. Further, the glow can provide sufficient heat to degrade plastic in contact with the terminal components. Violent arcing involving intense gasification can then develop on nearby plastic areas, sometimes accompanied by intensely glowing areas inside the plastic. Sometimes the intense glowing areas inside plastic develop without the violent arcing. The intense arcing or the glow inside plastic often develops into flaming, which can be of sufficient intensity and duration to ignite combustible materials near the connection.
{"title":"Glowing Connection Experiments With Alternating Currents Below 1${rm A}_{rm rms}$","authors":"J. Urbas","doi":"10.1109/TCAPT.2010.2077737","DOIUrl":"https://doi.org/10.1109/TCAPT.2010.2077737","url":null,"abstract":"It was experimentally shown that a glowing connection can develop in an electrical switch at a terminal connection comprised of a connector that utilizes a spring action against a conductor to provide electrical contact in household electrical appliances where vibration exists, and when the connection is loose. This can happen at a current flow such as 0.6 Arms at 120-V. Further, the glow can provide sufficient heat to degrade plastic in contact with the terminal components. Violent arcing involving intense gasification can then develop on nearby plastic areas, sometimes accompanied by intensely glowing areas inside the plastic. Sometimes the intense glowing areas inside plastic develop without the violent arcing. The intense arcing or the glow inside plastic often develops into flaming, which can be of sufficient intensity and duration to ignite combustible materials near the connection.","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"33 1","pages":"777-783"},"PeriodicalIF":0.0,"publicationDate":"2010-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TCAPT.2010.2077737","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62520879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-22DOI: 10.1109/TCAPT.2010.2065805
M. Tsai, Chun-Hung Chen, W.L. Tsai
The light emitting diode (LED) packaging problems associated with high cost, high junction temperature, low luminous efficiency, and low reliability have to be resolved before the LED gaining more market acceptance. In this paper, chip-on-plate (CoP) LED packages with and without phosphors are evaluated in terms of thermal resistance and reliability under wet and high-temperature operation life (WHTOL) and thermal shock tests. The WHTOL test is with the condition of 85°C/85%RH and 350 mA of forward current for 1008 h, while thermal shock test is with 200 cycles at temperature ranging from -40°C to 125°C. The thermal behavior of the CoP packages was analyzed by 1-D thermal resistance circuit (1-D TRC) with and without spreading angle, 3-D TRC method, and 2-D axisymmetric finite element method. The feasibility of these analyses was evaluated and discussed in detail by comparing those results with experimental measurements. The reliability results indicated that all CoP packages with phosphors in the silicone encapsulant failed after 309 h in the WHTOL test, but all those without phosphors still survived after 1008 h. The failure modes were found to be the debonding of the aluminum wire from the chip or copper pad of the substrate. However, after the aluminum wire was replaced by gold wire, all the packages with and without phosphors passed after 1008 h. For these survival packages in the WHTOL test, their thermal resistances of junction-to-air and junction-to-aluminum substrate increased by about 12 and 9°C/W, respectively. Moreover, it was also found that there is a difference of 38°C/W in the junction-to-air thermal resistances for the packages between under natural and forced convections in the chamber during the WHTOL test. This might yield the different reliability data, unless the flow conditions in the test chamber are specified in this standard test. Furthermore, all the packages with and without phosphors could pass 200 cycles in thermal shock test, with minor changes in the thermal resistances. However, the degradation of luminous flux in the packages with phosphors was found to be greater than those without phosphors by 14% vs. 9%.
{"title":"Thermal Resistance and Reliability of High-Power LED Packages Under WHTOL and Thermal Shock Tests","authors":"M. Tsai, Chun-Hung Chen, W.L. Tsai","doi":"10.1109/TCAPT.2010.2065805","DOIUrl":"https://doi.org/10.1109/TCAPT.2010.2065805","url":null,"abstract":"The light emitting diode (LED) packaging problems associated with high cost, high junction temperature, low luminous efficiency, and low reliability have to be resolved before the LED gaining more market acceptance. In this paper, chip-on-plate (CoP) LED packages with and without phosphors are evaluated in terms of thermal resistance and reliability under wet and high-temperature operation life (WHTOL) and thermal shock tests. The WHTOL test is with the condition of 85°C/85%RH and 350 mA of forward current for 1008 h, while thermal shock test is with 200 cycles at temperature ranging from -40°C to 125°C. The thermal behavior of the CoP packages was analyzed by 1-D thermal resistance circuit (1-D TRC) with and without spreading angle, 3-D TRC method, and 2-D axisymmetric finite element method. The feasibility of these analyses was evaluated and discussed in detail by comparing those results with experimental measurements. The reliability results indicated that all CoP packages with phosphors in the silicone encapsulant failed after 309 h in the WHTOL test, but all those without phosphors still survived after 1008 h. The failure modes were found to be the debonding of the aluminum wire from the chip or copper pad of the substrate. However, after the aluminum wire was replaced by gold wire, all the packages with and without phosphors passed after 1008 h. For these survival packages in the WHTOL test, their thermal resistances of junction-to-air and junction-to-aluminum substrate increased by about 12 and 9°C/W, respectively. Moreover, it was also found that there is a difference of 38°C/W in the junction-to-air thermal resistances for the packages between under natural and forced convections in the chamber during the WHTOL test. This might yield the different reliability data, unless the flow conditions in the test chamber are specified in this standard test. Furthermore, all the packages with and without phosphors could pass 200 cycles in thermal shock test, with minor changes in the thermal resistances. However, the degradation of luminous flux in the packages with phosphors was found to be greater than those without phosphors by 14% vs. 9%.","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"33 1","pages":"738-746"},"PeriodicalIF":0.0,"publicationDate":"2010-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TCAPT.2010.2065805","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62520444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-22DOI: 10.1109/TCAPT.2010.2073469
W. Chi, T. Chou, Cheng-Nan Han, Shin-Yueh Yang, K. Chiang
Light emitting diode (LED) with a long lifetime, low power consumption, and low pollution has been successfully applied in many products. However, due to its low electro-optical conversion efficiency, high percentage of input power transformed to redundant heat, thus increasing the LED temperature. This phenomenon decreases the luminous flux, changing light color, and useful life span of LED. Therefore, thermal management becomes an important issue in high power LED. In this paper, the variation of luminous flux and light color for different LED lighting modules under long time operation has been measured and discussed. In addition, a detailed finite element model of LED lighting module, MR-16, with a corresponding input power and suitable boundary conditions is established by using the ANSYS finite element analysis program. Furthermore, to validate the simulation results, the current-voltage-temperature method for characterization of a diode is utilized to measure the junction temperature of LED chip indirectly and compare with simulation results. After the simulation is validated, various thermal performance assessments under the different design parameters of the LED package and lighting module are also investigated in this paper. The methodology and analysis results of this paper can provide a guideline for the LED lighting module such as MR-16 design in the future.
{"title":"Analysis of Thermal and Luminous Performance of MR-16 LED Lighting Module","authors":"W. Chi, T. Chou, Cheng-Nan Han, Shin-Yueh Yang, K. Chiang","doi":"10.1109/TCAPT.2010.2073469","DOIUrl":"https://doi.org/10.1109/TCAPT.2010.2073469","url":null,"abstract":"Light emitting diode (LED) with a long lifetime, low power consumption, and low pollution has been successfully applied in many products. However, due to its low electro-optical conversion efficiency, high percentage of input power transformed to redundant heat, thus increasing the LED temperature. This phenomenon decreases the luminous flux, changing light color, and useful life span of LED. Therefore, thermal management becomes an important issue in high power LED. In this paper, the variation of luminous flux and light color for different LED lighting modules under long time operation has been measured and discussed. In addition, a detailed finite element model of LED lighting module, MR-16, with a corresponding input power and suitable boundary conditions is established by using the ANSYS finite element analysis program. Furthermore, to validate the simulation results, the current-voltage-temperature method for characterization of a diode is utilized to measure the junction temperature of LED chip indirectly and compare with simulation results. After the simulation is validated, various thermal performance assessments under the different design parameters of the LED package and lighting module are also investigated in this paper. The methodology and analysis results of this paper can provide a guideline for the LED lighting module such as MR-16 design in the future.","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"440 1","pages":"713-721"},"PeriodicalIF":0.0,"publicationDate":"2010-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TCAPT.2010.2073469","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62520840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-11-22DOI: 10.1109/TCAPT.2010.2080273
Su-Tsai Lu, Wen-Hwa Chen
Future applications of flexible displays and wearable electronics will need 3-D stacked flexible interconnects. The interconnection of an ultrathin chip-on-flex (UTCOF) that can provide flexibility is one approach that meets this requirement. Therefore, thermally induced warpage of UTCOF interconnects using anisotropic conductive adhesive (ACA) is investigated. In this paper, the effects of the ACA joint material properties, bonding temperature, and chip thickness on warpage of ACA-bonded UTCOF interconnects are examined experimentally and numerically. Two film types of ACA materials, ACA-P and ACA-F, are assembled under different bonding temperatures to study the effects of bonding temperature on warpage via out-of-plane deformation measurements using a micro figure measurement instrument. Micro Au-bump and compliant-bump assemblies in 80-μm-pitch dummy test vehicles are evaluated. Moreover, ultrathin chips with 25-50 μm thickness were assembled onto polyimide flex substrates to study the effects of chip thickness on thermally induced warpage. The 85°C/85% relative humidity thermal humidity storage test (RH THST) was also conducted for 1000 h for the UTCOF assembled with the selected process parameters. The interfaces between the ultrathin silicon chip and substrate are inspected in cross-sectional scanning electron microscopy (SEM) images. To validate the results of the experiments, a rigorous 3-D finite element (FE) analysis model integrating both thermal and thermal-mechanical behaviors of the UTCOF is established and performed using the ANSYS program. Experimental and numerical results indicate that the warpage of the micro compliant-bump assembly is less than that of the micro Au bump. Furthermore, the averaged warpage of the ACA-P-bonded samples with the Au bump using a 50- μm-thick chip is around 50.3 μm at a bonding temperature of 160°C whereas that of the ACA-F-bonded samples is 64.4 μm at 190°C. Additionally, both thermal expansion mismatch and the thermal gradient between the ultrathin silicon chip and substrate strongly affect the thermal-mechanical behaviors of the UTCOF interconnects. As expected, warpage increases as thickness of an ultrathin silicon chip decreases. A strong correlation exists between FE analysis results and experimental results. The manufacturing technology for high-density and flexible UTCOF interconnects with ACA joints is thus established.
{"title":"Experimental/Numerical Analysis of Thermally Induced Warpage of Ultrathin Chip-on-Flex (UTCOF) Interconnects","authors":"Su-Tsai Lu, Wen-Hwa Chen","doi":"10.1109/TCAPT.2010.2080273","DOIUrl":"https://doi.org/10.1109/TCAPT.2010.2080273","url":null,"abstract":"Future applications of flexible displays and wearable electronics will need 3-D stacked flexible interconnects. The interconnection of an ultrathin chip-on-flex (UTCOF) that can provide flexibility is one approach that meets this requirement. Therefore, thermally induced warpage of UTCOF interconnects using anisotropic conductive adhesive (ACA) is investigated. In this paper, the effects of the ACA joint material properties, bonding temperature, and chip thickness on warpage of ACA-bonded UTCOF interconnects are examined experimentally and numerically. Two film types of ACA materials, ACA-P and ACA-F, are assembled under different bonding temperatures to study the effects of bonding temperature on warpage via out-of-plane deformation measurements using a micro figure measurement instrument. Micro Au-bump and compliant-bump assemblies in 80-μm-pitch dummy test vehicles are evaluated. Moreover, ultrathin chips with 25-50 μm thickness were assembled onto polyimide flex substrates to study the effects of chip thickness on thermally induced warpage. The 85°C/85% relative humidity thermal humidity storage test (RH THST) was also conducted for 1000 h for the UTCOF assembled with the selected process parameters. The interfaces between the ultrathin silicon chip and substrate are inspected in cross-sectional scanning electron microscopy (SEM) images. To validate the results of the experiments, a rigorous 3-D finite element (FE) analysis model integrating both thermal and thermal-mechanical behaviors of the UTCOF is established and performed using the ANSYS program. Experimental and numerical results indicate that the warpage of the micro compliant-bump assembly is less than that of the micro Au bump. Furthermore, the averaged warpage of the ACA-P-bonded samples with the Au bump using a 50- μm-thick chip is around 50.3 μm at a bonding temperature of 160°C whereas that of the ACA-F-bonded samples is 64.4 μm at 190°C. Additionally, both thermal expansion mismatch and the thermal gradient between the ultrathin silicon chip and substrate strongly affect the thermal-mechanical behaviors of the UTCOF interconnects. As expected, warpage increases as thickness of an ultrathin silicon chip decreases. A strong correlation exists between FE analysis results and experimental results. The manufacturing technology for high-density and flexible UTCOF interconnects with ACA joints is thus established.","PeriodicalId":55013,"journal":{"name":"IEEE Transactions on Components and Packaging Technologies","volume":"33 1","pages":"819-829"},"PeriodicalIF":0.0,"publicationDate":"2010-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TCAPT.2010.2080273","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62520949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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