Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644004
V. Kolchuzhin, J. Mehner, T. Gessner, W. Doetzel
In this paper we describe a simulation methodology based on FEM to automatic generating reduced order models of coupled microelectro-mechanical systems (MEMS). In particular, the time consuming FE data sampling process should be replaced by a single finite element run. The idea of the new approach is to compute not only the governing system matrices but also high order partial derivatives with regard to design parameters by means of automatic differentiation. As result, Taylor vectors of the model response can be expanded in the vicinity of the initial position with regard to dimensional and physical parameters. The approach is demonstrated on example of a micromirror cell
{"title":"Parametric Finite Element Analysis for Reduced Order Modeling of MEMS","authors":"V. Kolchuzhin, J. Mehner, T. Gessner, W. Doetzel","doi":"10.1109/ESIME.2006.1644004","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644004","url":null,"abstract":"In this paper we describe a simulation methodology based on FEM to automatic generating reduced order models of coupled microelectro-mechanical systems (MEMS). In particular, the time consuming FE data sampling process should be replaced by a single finite element run. The idea of the new approach is to compute not only the governing system matrices but also high order partial derivatives with regard to design parameters by means of automatic differentiation. As result, Taylor vectors of the model response can be expanded in the vicinity of the initial position with regard to dimensional and physical parameters. The approach is demonstrated on example of a micromirror cell","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"62 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81422412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643945
Chi-Yen Shen, Cheng-Liang Hsu, De-Lu Wang
A shear horizontal surface acoustic wave (SH-SAW) sensor coated with polyaniline (PANI) was investigated in this study. The frequency shift of SH-SAW was measured for the response to ammonia in this study. The temperature effect was also discussed in order to find the suitable temperature of operation. The response of the SH-SAW sensor immediately responded the concentration of ammonia gas. Moreover, this sensor presented a sensitivity of 0.03 ppm/ppm at 23degC. The responses to ammonia decreased with decreasing temperature below 23degC
{"title":"Shear Horizontal Surface Acoustic Wave Sensors Based on Polyaniline for Ammonia Gas Sensing","authors":"Chi-Yen Shen, Cheng-Liang Hsu, De-Lu Wang","doi":"10.1109/ESIME.2006.1643945","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643945","url":null,"abstract":"A shear horizontal surface acoustic wave (SH-SAW) sensor coated with polyaniline (PANI) was investigated in this study. The frequency shift of SH-SAW was measured for the response to ammonia in this study. The temperature effect was also discussed in order to find the suitable temperature of operation. The response of the SH-SAW sensor immediately responded the concentration of ammonia gas. Moreover, this sensor presented a sensitivity of 0.03 ppm/ppm at 23degC. The responses to ammonia decreased with decreasing temperature below 23degC","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"48 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87964833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643960
S. Orain, A. Fuchsmann, V. Fiori, X. Federspiel
Continuous down scaling of the interconnect dimensions led to the introduction of copper and low-k dielectric materials. The use of such materials is challenging in the field of mechanical reliability, such as stress-induced voiding in copper interconnects and cracking of low-k dielectrics. Up to now these two failure modes were investigated separately. However, recent experimental observations tend to demonstrate the possibility of a complex interaction of both failure modes, one overwhelming or enhancing the other. In this paper a comparison of the risk of void or crack occurrence is made by the mean of finite element modelling. Further, the interaction between these two failure modes (voiding and cracking) is also studied
{"title":"Reliability Issues in Cu/low-k Structures Regarding the Initiation of Stress-Voiding or Crack Failure","authors":"S. Orain, A. Fuchsmann, V. Fiori, X. Federspiel","doi":"10.1109/ESIME.2006.1643960","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643960","url":null,"abstract":"Continuous down scaling of the interconnect dimensions led to the introduction of copper and low-k dielectric materials. The use of such materials is challenging in the field of mechanical reliability, such as stress-induced voiding in copper interconnects and cracking of low-k dielectrics. Up to now these two failure modes were investigated separately. However, recent experimental observations tend to demonstrate the possibility of a complex interaction of both failure modes, one overwhelming or enhancing the other. In this paper a comparison of the risk of void or crack occurrence is made by the mean of finite element modelling. Further, the interaction between these two failure modes (voiding and cracking) is also studied","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"93 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89086534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644021
K. ezni ek Zden, V. Tvarozek, I. Szendivich, M. ezni ek
A powerful temperature difference measuring relation method using the high resistance ratio-metric sensors which is improving the accuracy, because it can solve such problems as dependence of a sensor's sensitivity to such factors as power supply instability, ambient temperature, humidity, pressure, effects of self-heating, aging, etc. was presented in [ezni ek et al, 2001]. Many similar derivate relation ratio measuring and monitoring systems were developed for biosensor applications etc. presented in (Tvarozek et al., 2002), (Vavrinsky et al., 2003), and for micro-calorimetric applications (ezni ek and Szendiuch, 2005), (ezni ek et al., 2005) to time. The combination of these methods was studied for many applications in continual process constant temperature controlling. The process energy is balanced at defined constant temperature with the highest sensitivity and the lowest time-current delay using the special balance sensor consisted of electronic energy balance switching circuit with operational amplifier. The sensor heater contains of two asymmetric low resistance dividers in anti-parallel circuit wired to output of power linear operational amplifier: two of unequal resistors (Pt1 and Pt2) are temperature-dependent (Pt) and second couple of unequal resistors (R1 and R2) are temperature non-dependent (NiCr or AgPd). The sensor heater contains of four resistors ceramic substrate on realized, two of them (Pt1 and Pt2) are temperature-dependent (Pt) and second one (R1 and R2) are temperature non-dependent (NiCr or AgPd) resistors. The coefficient of asymmetry defined how resistance ratio K=Ptl/(Ptl+Pt2) is equal to R1/(R1+R2) and must be different of frac12. It means that the resistances of resistors Pt1 and Pt2 or R1 and R2 can't be the same. The temperature sensitivity VTCR of heater is defined by formula VTCR = -(2K-l)*TCR/4 and it is calibrate-able by trimming of coefficient K. Itself balance heater working temperature is defined by value of resistance R1 or R2 in relation to resistance of Pt1 or Pt2. The itself balance heater temperature is defined by equality R1=Pt1 or R2=Pt2 by relation Ty = (R1-Pt10)/TCR*Pt10, where the Pt10 is resistance of resistor Pt1 by temperature 0degC. This is first one of designed heater parameters. Second one is the current limit determined by the maximal heater output and the system power voltage by implication. Finally third one is heater temperature sensitivity defined hereinbefore
[ezni ek et al .， 2001]提出了一种功能强大的采用高电阻比计量传感器的温差测量关系方法，解决了传感器灵敏度对电源不稳定、环境温度、湿度、压力、自热影响、老化等因素的依赖，提高了测量精度。许多类似的衍生关系比测量和监测系统被开发用于生物传感器应用等，如(Tvarozek等人，2002)，(Vavrinsky等人，2003)，以及微热量应用(ezni ek和Szendiuch, 2005)， (ezni ek等人，2005)。研究了这些方法的组合在连续过程恒温控制中的许多应用。利用带运算放大器的电子能量平衡开关电路组成的特殊平衡传感器，在规定的恒温下以最高的灵敏度和最低的时间-电流延迟进行过程能量平衡。传感器加热器包含两个不对称的低电阻分压器，在反并联电路中连接到功率线性运算放大器的输出:两个不相等电阻(Pt1和Pt2)是温度相关的(Pt)，第二对不相等电阻(R1和R2)是温度无关的(NiCr或AgPd)。传感器加热器包含四个陶瓷衬底电阻，其中两个(Pt1和Pt2)是温度相关的(Pt)，第二个(R1和R2)是温度非相关的(NiCr或AgPd)电阻。不对称系数定义了电阻比K=Ptl/(Ptl+Pt2)如何等于R1/(R1+R2)，并且必须不同于frac12。这意味着电阻Pt1和Pt2或R1和R2的电阻不能相同。加热器的温度灵敏度VTCR由公式VTCR = -(2k - 1)*TCR/4定义，可通过调整系数k来校准。加热器本身的平衡工作温度由电阻R1或R2相对于电阻Pt1或Pt2的值来定义。自身平衡加热器的温度由等式R1=Pt1或R2=Pt2定义为Ty = (R1-Pt10)/TCR*Pt10，其中Pt10为电阻Pt1的电阻，温度为0℃。这是加热器的第一个设计参数。二是由最大加热器输出和隐含的系统电源电压决定的电流限制。最后，第三个是上文定义的加热器温度灵敏度
{"title":"Hybrid Constant Temperature Regulator","authors":"K. ezni ek Zden, V. Tvarozek, I. Szendivich, M. ezni ek","doi":"10.1109/ESIME.2006.1644021","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644021","url":null,"abstract":"A powerful temperature difference measuring relation method using the high resistance ratio-metric sensors which is improving the accuracy, because it can solve such problems as dependence of a sensor's sensitivity to such factors as power supply instability, ambient temperature, humidity, pressure, effects of self-heating, aging, etc. was presented in [ezni ek et al, 2001]. Many similar derivate relation ratio measuring and monitoring systems were developed for biosensor applications etc. presented in (Tvarozek et al., 2002), (Vavrinsky et al., 2003), and for micro-calorimetric applications (ezni ek and Szendiuch, 2005), (ezni ek et al., 2005) to time. The combination of these methods was studied for many applications in continual process constant temperature controlling. The process energy is balanced at defined constant temperature with the highest sensitivity and the lowest time-current delay using the special balance sensor consisted of electronic energy balance switching circuit with operational amplifier. The sensor heater contains of two asymmetric low resistance dividers in anti-parallel circuit wired to output of power linear operational amplifier: two of unequal resistors (Pt1 and Pt2) are temperature-dependent (Pt) and second couple of unequal resistors (R1 and R2) are temperature non-dependent (NiCr or AgPd). The sensor heater contains of four resistors ceramic substrate on realized, two of them (Pt1 and Pt2) are temperature-dependent (Pt) and second one (R1 and R2) are temperature non-dependent (NiCr or AgPd) resistors. The coefficient of asymmetry defined how resistance ratio K=Ptl/(Ptl+Pt2) is equal to R1/(R1+R2) and must be different of frac12. It means that the resistances of resistors Pt1 and Pt2 or R1 and R2 can't be the same. The temperature sensitivity VTCR of heater is defined by formula VTCR = -(2K-l)*TCR/4 and it is calibrate-able by trimming of coefficient K. Itself balance heater working temperature is defined by value of resistance R1 or R2 in relation to resistance of Pt1 or Pt2. The itself balance heater temperature is defined by equality R1=Pt1 or R2=Pt2 by relation Ty = (R1-Pt10)/TCR*Pt10, where the Pt10 is resistance of resistor Pt1 by temperature 0degC. This is first one of designed heater parameters. Second one is the current limit determined by the maximal heater output and the system power voltage by implication. Finally third one is heater temperature sensitivity defined hereinbefore","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"16 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85816011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644057
L. Vietzorreck
The modeling of RF MEMS circuits and components is an important issue, as by proper modeling and optimization of a structure prior to the technological realization the time for a production cycle can be reduced. RF MEMS are in general three-dimensional structured devices, which can be analyzed with all common design and simulation tools. On the other hand the geometrical dimensions, varying from a fraction of a micron to several millimeters, create aspect ratios that make the accurate full wave characterization of the device very challenging. Moreover, for small dimensions material parameters like conductor loss, roughness etc. Play an important role and have to be considered in a careful analysis. In this contribution a short overview over existing modeling tools, suitable for the analysis of RF MEMS will be given. Modeling strategies and critical aspects of the simulations will be discussed
{"title":"EM Modeling of RF MEMS","authors":"L. Vietzorreck","doi":"10.1109/ESIME.2006.1644057","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644057","url":null,"abstract":"The modeling of RF MEMS circuits and components is an important issue, as by proper modeling and optimization of a structure prior to the technological realization the time for a production cycle can be reduced. RF MEMS are in general three-dimensional structured devices, which can be analyzed with all common design and simulation tools. On the other hand the geometrical dimensions, varying from a fraction of a micron to several millimeters, create aspect ratios that make the accurate full wave characterization of the device very challenging. Moreover, for small dimensions material parameters like conductor loss, roughness etc. Play an important role and have to be considered in a careful analysis. In this contribution a short overview over existing modeling tools, suitable for the analysis of RF MEMS will be given. Modeling strategies and critical aspects of the simulations will be discussed","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90499576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644056
C. Cognetti
Summary form only given. Evolution of semiconductor packaging has taken impressive acceleration, under the pressure of new applications, combining very high volumes, innovation and cost effectiveness. Conventional single chip package completed its cycle, by reaching a die-to-package ratio close to one. And also wire bonding technology is getting close to its physical limits, at about 25-30 micron bonding pad pitch. New 3D interconnection technologies, like system in package (SiP), package on package (PoP) and, package in package (PiP), offer the unique advantage of integrating heterogeneous functions in the three dimensions of the package, which can be in some extent competitive with chip-level integration (system on chip - SoC)
{"title":"Evolution of Semiconductor Packaging. Present and Future","authors":"C. Cognetti","doi":"10.1109/ESIME.2006.1644056","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644056","url":null,"abstract":"Summary form only given. Evolution of semiconductor packaging has taken impressive acceleration, under the pressure of new applications, combining very high volumes, innovation and cost effectiveness. Conventional single chip package completed its cycle, by reaching a die-to-package ratio close to one. And also wire bonding technology is getting close to its physical limits, at about 25-30 micron bonding pad pitch. New 3D interconnection technologies, like system in package (SiP), package on package (PoP) and, package in package (PiP), offer the unique advantage of integrating heterogeneous functions in the three dimensions of the package, which can be in some extent competitive with chip-level integration (system on chip - SoC)","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"56 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76058493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643997
M. Dellutri, P. Pulici, D. Guarnaccia, P. Stoppino, G. Vanalli, T. Lessio, F. Vassallo, R. Di Stefano, G. Labriola, A. Tenerello, F. Lo Iacono, G. Campardo
The evolution of electronic world is running toward more and more complex devices even looking for a reduction of the overall system dimensions. This improvement is particularly evident in the wireless applications where portable devices are becoming the key products. Many different applications have been inserted in the last years to satisfy all the increasing final user requirements, without affecting the final device dimensions. This important goal was possible due to many technical achievements in term of integration, the stacked package solutions being the most relevant among them. This assembly technology allows putting more dice one upon the other in a unique package so exploiting its z-dimension. This work aims to describe a multi-memory stacked device of 1 Gb size of the NOR flash memory composed by a four 256Mb dice stacked structure. This solution allows increasing the memory size maintaining the electrical performances of the multilevel NOR flash i.e. speed class. The structure is composed by seven dice: four active and three dummy interposers to create the physical space for the wires bonding from die pads to package substrate (Titus et al., 2004). The package is a LFBGA (low fine pitch ball grid array) 8 mm by 10 mm by 1.4 mm with 88 balls (0.8 mm pitch). An embedded circuitry in the die implements the logic to allow the system to be managed as a monolithic 1 Gb. Moreover, a description of the electrical analysis is reported in order to highlight the electromagnetic interferences between the different dice and the signal integrity of the whole system. Some samples of the device have been assembled in a package without molding in order to make measurements even on the pad of the devices and other critical nodes internal into the package
电子世界的发展正朝着越来越复杂的设备发展，甚至寻求减少整体系统的尺寸。这种改进在无线应用中尤其明显，便携式设备正在成为关键产品。在过去的几年中，已经插入了许多不同的应用程序，以满足所有不断增长的最终用户需求，而不影响最终设备尺寸。由于集成方面的许多技术成就，这一重要目标成为可能，堆叠封装解决方案是其中最相关的。这种组装技术允许在一个独特的封装中放置更多的骰子，从而利用其z维度。本工作旨在描述一个由4个256Mb的骰子堆叠结构组成的1gb大小的NOR闪存多存储器堆叠器件。该解决方案允许增加内存大小，保持多电平NOR闪存的电气性能，即速度等级。该结构由7个骰子组成:4个有源和3个虚拟中间体，用于为从模垫到封装基板的导线键合创造物理空间(Titus等，2004)。该封装是LFBGA(低细间距球网格阵列)，8mm × 10mm × 1.4 mm, 88个球(0.8 mm间距)。芯片中的嵌入式电路实现了逻辑，允许系统作为1gb的单片管理。此外，为了突出不同骰子之间的电磁干扰和整个系统的信号完整性，报告了电分析的描述。一些样品的设备已经组装在一个包没有成型，以便进行测量，甚至在垫的设备和其他关键节点内部的封装
{"title":"1 Gb stacked solution of multilevel NOR flash memory packaged in a LFBGA 8 mm by 10 mm by 1.4 mm of thickness","authors":"M. Dellutri, P. Pulici, D. Guarnaccia, P. Stoppino, G. Vanalli, T. Lessio, F. Vassallo, R. Di Stefano, G. Labriola, A. Tenerello, F. Lo Iacono, G. Campardo","doi":"10.1109/ESIME.2006.1643997","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643997","url":null,"abstract":"The evolution of electronic world is running toward more and more complex devices even looking for a reduction of the overall system dimensions. This improvement is particularly evident in the wireless applications where portable devices are becoming the key products. Many different applications have been inserted in the last years to satisfy all the increasing final user requirements, without affecting the final device dimensions. This important goal was possible due to many technical achievements in term of integration, the stacked package solutions being the most relevant among them. This assembly technology allows putting more dice one upon the other in a unique package so exploiting its z-dimension. This work aims to describe a multi-memory stacked device of 1 Gb size of the NOR flash memory composed by a four 256Mb dice stacked structure. This solution allows increasing the memory size maintaining the electrical performances of the multilevel NOR flash i.e. speed class. The structure is composed by seven dice: four active and three dummy interposers to create the physical space for the wires bonding from die pads to package substrate (Titus et al., 2004). The package is a LFBGA (low fine pitch ball grid array) 8 mm by 10 mm by 1.4 mm with 88 balls (0.8 mm pitch). An embedded circuitry in the die implements the logic to allow the system to be managed as a monolithic 1 Gb. Moreover, a description of the electrical analysis is reported in order to highlight the electromagnetic interferences between the different dice and the signal integrity of the whole system. Some samples of the device have been assembled in a package without molding in order to make measurements even on the pad of the devices and other critical nodes internal into the package","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"12 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78547733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644007
C. Cereignani, A. Frangi, S. Lorenzani, A. Frezzotti
A three-dimensional quasi-static Stokes model, with a correction based on the kinetic theory of rarefied gas, is used to evaluate the damping forces exerted by gas flows on the moving surfaces of micromechanical structures in a wide range of pressures. Numerical results arc compared with the experimental data collected on a silicon biaxial accelerometer in the continuum and transitional flow regimes
{"title":"On the application of the BGK model to the simulation of fluid structure interaction in MEMS","authors":"C. Cereignani, A. Frangi, S. Lorenzani, A. Frezzotti","doi":"10.1109/ESIME.2006.1644007","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644007","url":null,"abstract":"A three-dimensional quasi-static Stokes model, with a correction based on the kinetic theory of rarefied gas, is used to evaluate the damping forces exerted by gas flows on the moving surfaces of micromechanical structures in a wide range of pressures. Numerical results arc compared with the experimental data collected on a silicon biaxial accelerometer in the continuum and transitional flow regimes","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"11 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74901076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644022
J. Bielen, J.-J. Gommans, F. Theunis
Aluminum wire bonds, as used in a ceramic air cavity package for LDMOS, will intrinsically be prone to mechanical fatigue due to temperature and power cycling causing the wires to expand and shrink in a cyclical way. Under certain pulsed application conditions, the required amount of current cycles the product must survive is so high that not just low cycle fatigue, caused by cyclic plastic deformation, but also high cycle fatigue becomes a concern. This paper describes how in-situ monitored power cycling experiments, using the Joule heating of the bond wires, were performed on dedicated test structures at different stress levels with wire loop shapes and test settings critical enough to find failures within reasonable test times. Wire bond settings were varied to create different amounts of initial damage as introduced by the plastic deformation of the heel and the wedge. Finite element method was employed to calculate the stress amplitude in the heel of the bond wire in the experiments as function of current, pulse time and loop shape. This required a multi-physics approach using coupled electro-thermal and sequentially coupled thermo-mechanical simulations. The amount of initial damage was also estimated, using 2D FE simulations, in order to quantitatively take into account the initial plastic strains. With the measured failure times (Nf) and calculated stress amplitude (S) the durability or S-N curves for different amounts of initial damage could be derived and fitted with the Basquin model. These fitted models were used to predict the expected lifetime for specified field conditions. Furthermore the models can be used to derive `design for reliability rules' for wire loop shapes that will survive a specified user profile
{"title":"Prediction of high cycle fatigue in aluminum bond wires: A physics of failure approach combining experiments and multi-physics simulations","authors":"J. Bielen, J.-J. Gommans, F. Theunis","doi":"10.1109/ESIME.2006.1644022","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644022","url":null,"abstract":"Aluminum wire bonds, as used in a ceramic air cavity package for LDMOS, will intrinsically be prone to mechanical fatigue due to temperature and power cycling causing the wires to expand and shrink in a cyclical way. Under certain pulsed application conditions, the required amount of current cycles the product must survive is so high that not just low cycle fatigue, caused by cyclic plastic deformation, but also high cycle fatigue becomes a concern. This paper describes how in-situ monitored power cycling experiments, using the Joule heating of the bond wires, were performed on dedicated test structures at different stress levels with wire loop shapes and test settings critical enough to find failures within reasonable test times. Wire bond settings were varied to create different amounts of initial damage as introduced by the plastic deformation of the heel and the wedge. Finite element method was employed to calculate the stress amplitude in the heel of the bond wire in the experiments as function of current, pulse time and loop shape. This required a multi-physics approach using coupled electro-thermal and sequentially coupled thermo-mechanical simulations. The amount of initial damage was also estimated, using 2D FE simulations, in order to quantitatively take into account the initial plastic strains. With the measured failure times (Nf) and calculated stress amplitude (S) the durability or S-N curves for different amounts of initial damage could be derived and fitted with the Basquin model. These fitted models were used to predict the expected lifetime for specified field conditions. Furthermore the models can be used to derive `design for reliability rules' for wire loop shapes that will survive a specified user profile","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"68 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81253513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643965
V. Rochus, D. Rixen, J. Golinval
This paper presents the advantages of a strong coupled formulation to model the electro-mechanical coupling appearing in MEMS. Usually the classical softwares use a staggered methodology iterating between two different codes to obtain the solution of the coupled problem. In this research a strong coupled formulation is proposed and a tangent stiffness matrix of the whole problem is computed. Using this matrix, nonlinear algorithms such as the Riks-Crisfield algorithm may be applied to solve the static nonlinear problem and determine accurately the static pull-in voltage. Moreover, the natural frequencies may be computed around each equilibrium positions. The dynamic behaviour of the structure may also be studied and two new parameters are defined: the dynamic pull-in voltage and the dynamic pull-in time. This strong coupled methodology deriving from variational principle may also be used for topology optimisation and extended finite elements
{"title":"On the Advantages of Using a Strong Coupling Variational Formulation to Model Electro-Mechanical Problem","authors":"V. Rochus, D. Rixen, J. Golinval","doi":"10.1109/ESIME.2006.1643965","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643965","url":null,"abstract":"This paper presents the advantages of a strong coupled formulation to model the electro-mechanical coupling appearing in MEMS. Usually the classical softwares use a staggered methodology iterating between two different codes to obtain the solution of the coupled problem. In this research a strong coupled formulation is proposed and a tangent stiffness matrix of the whole problem is computed. Using this matrix, nonlinear algorithms such as the Riks-Crisfield algorithm may be applied to solve the static nonlinear problem and determine accurately the static pull-in voltage. Moreover, the natural frequencies may be computed around each equilibrium positions. The dynamic behaviour of the structure may also be studied and two new parameters are defined: the dynamic pull-in voltage and the dynamic pull-in time. This strong coupled methodology deriving from variational principle may also be used for topology optimisation and extended finite elements","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"5 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84811654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：