Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644040
F. Chapuis, F. Bastien, J. Manceau, F. Casset, P. Charvet
This article presents a study of microswitches with piezoelectric actuation. With the help of analysis modelling and FEM commercial software (ANSYS), we investigated the potentiality of AlN as piezoelectric actuator. Firstly, we compared AlN with PZT to actuate simple structures by bimorph effect as cantilever or clamped-clamped membrane. After this investigation, we focused on means to improve the deflection and the contact force of structures, by mechanical considerations, in case of an AlN actuation. This resulted in several designs of microswitches, with two different actuation mechanisms: bending or buckling. To go further, we evaluated some technological aspects as the influence of residual stresses and the shape of membrane on an AlN piezo-actuated structure
{"title":"FEM modelling of Piezo-actuated Microswitches","authors":"F. Chapuis, F. Bastien, J. Manceau, F. Casset, P. Charvet","doi":"10.1109/ESIME.2006.1644040","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644040","url":null,"abstract":"This article presents a study of microswitches with piezoelectric actuation. With the help of analysis modelling and FEM commercial software (ANSYS), we investigated the potentiality of AlN as piezoelectric actuator. Firstly, we compared AlN with PZT to actuate simple structures by bimorph effect as cantilever or clamped-clamped membrane. After this investigation, we focused on means to improve the deflection and the contact force of structures, by mechanical considerations, in case of an AlN actuation. This resulted in several designs of microswitches, with two different actuation mechanisms: bending or buckling. To go further, we evaluated some technological aspects as the influence of residual stresses and the shape of membrane on an AlN piezo-actuated structure","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86127957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643996
C. Villa, A. Morelli, D. Gualandris
Facing the demand of low cost solutions for medium power applications from various segments of the electronics market, a full thermal study comparing existing power SMD package families and new e-pad structures is performed. Different body sizes and pin counts are considered. The study consists of thermal modeling analysis carried on using FLOTHERMreg. Thermal simulation results with different PCB configurations are presented. The thermal dissipation mechanism for those packages through the metal bottom case to the PCB is described. The copper exposed area dimension soldered onto the PCB is identified as the dominating factor controlling the total package thermal resistance. Consequently the limits of applicability of new small body e-pad packages versus the old style power SMD's are finally defined
{"title":"From Power SO to E-Pad packages: a thermal bargain?","authors":"C. Villa, A. Morelli, D. Gualandris","doi":"10.1109/ESIME.2006.1643996","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643996","url":null,"abstract":"Facing the demand of low cost solutions for medium power applications from various segments of the electronics market, a full thermal study comparing existing power SMD package families and new e-pad structures is performed. Different body sizes and pin counts are considered. The study consists of thermal modeling analysis carried on using FLOTHERMreg. Thermal simulation results with different PCB configurations are presented. The thermal dissipation mechanism for those packages through the metal bottom case to the PCB is described. The copper exposed area dimension soldered onto the PCB is identified as the dominating factor controlling the total package thermal resistance. Consequently the limits of applicability of new small body e-pad packages versus the old style power SMD's are finally defined","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80925983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643966
A. Llobera, V. Cadarso, V. Seidemann, S. Buttgenbach, J. Plaza
This contribution deals with the optimization of a new SU-8 optical accelerometer. Microaccelerometers became large-scale production devices the last 90's. Several working principles have been applied for acceleration sensing. However, most of them suffer from high cross-sensitivity to electromagnetic interferences (EMI) and they cannot be used under harsh/explosive atmospheres. Therefore, optical accelerometers can be used to avoid these drawbacks. We introduced a new integrated polymer optical accelerometer based on intensity modulation formed by a SU-8 polymer structure. The SU-8 polymer is used as structural material but also as optical waveguide. It consists of one mass adjoined to four beams, all of them made of SU-8. There are three aligned optical waveguides: one on the mass and two fixed to the substrate. Any applied acceleration will misalign the three waveguides; the losses show the acceleration level. The paper is focused on the numerical simulation of this device. It is a one-way sequentially coupled analysis. Firstly, a finite element method (FEM) simulation is done to calculate the mechanical sensitivity of the structure. In parallel, the beam profile at the waveguides is computed by using the non-uniform finite difference method (NU-FDM). Finally, the evolution of the light beam in the propagating axis of the waveguides is simulated using the beam propagation method (BPM) by introducing the results of the previous simulations as loads. The good agreement between the experimental results and the simulation demonstrates the feasibility of the sequential couple of the mechanical and optical fields by using the three different numerical methods
{"title":"Numerical simulation of SU-8 optical accelerometers","authors":"A. Llobera, V. Cadarso, V. Seidemann, S. Buttgenbach, J. Plaza","doi":"10.1109/ESIME.2006.1643966","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643966","url":null,"abstract":"This contribution deals with the optimization of a new SU-8 optical accelerometer. Microaccelerometers became large-scale production devices the last 90's. Several working principles have been applied for acceleration sensing. However, most of them suffer from high cross-sensitivity to electromagnetic interferences (EMI) and they cannot be used under harsh/explosive atmospheres. Therefore, optical accelerometers can be used to avoid these drawbacks. We introduced a new integrated polymer optical accelerometer based on intensity modulation formed by a SU-8 polymer structure. The SU-8 polymer is used as structural material but also as optical waveguide. It consists of one mass adjoined to four beams, all of them made of SU-8. There are three aligned optical waveguides: one on the mass and two fixed to the substrate. Any applied acceleration will misalign the three waveguides; the losses show the acceleration level. The paper is focused on the numerical simulation of this device. It is a one-way sequentially coupled analysis. Firstly, a finite element method (FEM) simulation is done to calculate the mechanical sensitivity of the structure. In parallel, the beam profile at the waveguides is computed by using the non-uniform finite difference method (NU-FDM). Finally, the evolution of the light beam in the propagating axis of the waveguides is simulated using the beam propagation method (BPM) by introducing the results of the previous simulations as loads. The good agreement between the experimental results and the simulation demonstrates the feasibility of the sequential couple of the mechanical and optical fields by using the three different numerical methods","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83556268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644053
G. Wachutka
The rapid progress in microsystems technology is increasingly supported by MEMS-specific modeling methodologies and dedicated simulation tools. These do not only enable the visualization of fabrication processes and operational principles, but they also assist the designer in making decisions with a view to finding optimized microstructures under technological and economical constraints. Currently strong efforts are being made towards complete simulation platforms for the predictive simulation of microsystems, i.e. the "virtual fabrication" and "virtual experimentation, characterization and test" on the computer. We discuss the most important aspects to be focused on and practicable methodologies for microdevice and system modeling, in particular the consistent treatment of coupled fields and coupled domains required for setting up physically-based models for full system mixed-level simulation, and for the reliable validation and accurate calibration of the models
{"title":"Multi-Energy Domain Modeling of Microdevices: Virtual Prototyping by Predictive Simulation","authors":"G. Wachutka","doi":"10.1109/ESIME.2006.1644053","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644053","url":null,"abstract":"The rapid progress in microsystems technology is increasingly supported by MEMS-specific modeling methodologies and dedicated simulation tools. These do not only enable the visualization of fabrication processes and operational principles, but they also assist the designer in making decisions with a view to finding optimized microstructures under technological and economical constraints. Currently strong efforts are being made towards complete simulation platforms for the predictive simulation of microsystems, i.e. the \"virtual fabrication\" and \"virtual experimentation, characterization and test\" on the computer. We discuss the most important aspects to be focused on and practicable methodologies for microdevice and system modeling, in particular the consistent treatment of coupled fields and coupled domains required for setting up physically-based models for full system mixed-level simulation, and for the reliable validation and accurate calibration of the models","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/ESIME.2006.1644053","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72400317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643985
R. Gusmeroli, A. Spinelli, C. M. Compagnoni, D. Ielmini, A. Lacaita
Among the new memory concepts proposed in the last decade to replace the conventional flash cell, nanocrystal memories received large attentions because of their simple and CMOS compatible process flow. Using a 3-dimensional Monte Carlo simulator, we investigated the scaling perspectives of the nanocrystal memory technology due to reliability constraints. Results show that scaling this technology beyond the 45 nm node will drastically reduce the benefits deriving from distributed floating-gate effects and increase the program fail probability
{"title":"A Monte Carlo Investigation of Nanocrystal Memory Reliability","authors":"R. Gusmeroli, A. Spinelli, C. M. Compagnoni, D. Ielmini, A. Lacaita","doi":"10.1109/ESIME.2006.1643985","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643985","url":null,"abstract":"Among the new memory concepts proposed in the last decade to replace the conventional flash cell, nanocrystal memories received large attentions because of their simple and CMOS compatible process flow. Using a 3-dimensional Monte Carlo simulator, we investigated the scaling perspectives of the nanocrystal memory technology due to reliability constraints. Results show that scaling this technology beyond the 45 nm node will drastically reduce the benefits deriving from distributed floating-gate effects and increase the program fail probability","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/ESIME.2006.1643985","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72430736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643988
A. Spinelli, R. Gusmeroli
We investigate the effects of source-drain tunneling on the performance of double-gate MOS devices with a 2D quantum-mechanical model. We show that a clear signature of the source-drain tunneling current is observable in the subthreshold behavior, affecting device performance even at room temperature. Dependences of the tunneling current on the main design variables are then analyzed in detail
{"title":"Impact of Source-Drain Tunneling on Double-Gate Performance","authors":"A. Spinelli, R. Gusmeroli","doi":"10.1109/ESIME.2006.1643988","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643988","url":null,"abstract":"We investigate the effects of source-drain tunneling on the performance of double-gate MOS devices with a 2D quantum-mechanical model. We show that a clear signature of the source-drain tunneling current is observable in the subthreshold behavior, affecting device performance even at room temperature. Dependences of the tunneling current on the main design variables are then analyzed in detail","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78445036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644060
A. Tay
This paper discusses the role of computer simulation in predicting failure and in optimizing design in electronics packaging. The role played by simulation in predicting failure is illustrated by the use of the fracture mechanics approach in predicting delamination in plastic IC packages undergoing solder reflow. The role played by simulation in optimizing design of IC packages is illustrated by a parametric study of the effect of compliance on the reliability of copper column interconnected wafer level packages. Based on this study, a novel interconnect design is proposed where the interconnect compliance varies continuously from a low value at the centre of the chip to a high value at the perimeter of the chip
{"title":"The Role of Simulation in Failure Prediction and Design Optimization in Electronics Packaging","authors":"A. Tay","doi":"10.1109/ESIME.2006.1644060","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644060","url":null,"abstract":"This paper discusses the role of computer simulation in predicting failure and in optimizing design in electronics packaging. The role played by simulation in predicting failure is illustrated by the use of the fracture mechanics approach in predicting delamination in plastic IC packages undergoing solder reflow. The role played by simulation in optimizing design of IC packages is illustrated by a parametric study of the effect of compliance on the reliability of copper column interconnected wafer level packages. Based on this study, a novel interconnect design is proposed where the interconnect compliance varies continuously from a low value at the centre of the chip to a high value at the perimeter of the chip","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78621494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643954
B. Dennis, Z. Han, Weiya Jin, B. Wang, Leon Xu, T. Aapro, A. Ptchelintsev, T. Reinikainen
Real-world behavior of many physical systems is often the result of several physical factors acting simultaneously so multi-physics analyses are often necessary to understand the systems. However, coupled-physics problems are challenging due to increased non-linearity and size of the problem. Therefore, a series of strategies are required to address the increased computational cost associated with solving the large system of non-linear equations that arise from coupled-physics problems. In this paper, we look at some different multi-physics solution strategies applied to the equations governing the behavior of fuel cells. Specifically, the issues of non-linearity, memory and processor requirements are addressed through the use of continuation and segregated solution schemes. Examples for the time-independent solution of 3D fuel cell models by the finite element method are presented
{"title":"Multi-Physics Simulation Strategies with Application to Fuel Cell Modeling","authors":"B. Dennis, Z. Han, Weiya Jin, B. Wang, Leon Xu, T. Aapro, A. Ptchelintsev, T. Reinikainen","doi":"10.1109/ESIME.2006.1643954","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643954","url":null,"abstract":"Real-world behavior of many physical systems is often the result of several physical factors acting simultaneously so multi-physics analyses are often necessary to understand the systems. However, coupled-physics problems are challenging due to increased non-linearity and size of the problem. Therefore, a series of strategies are required to address the increased computational cost associated with solving the large system of non-linear equations that arise from coupled-physics problems. In this paper, we look at some different multi-physics solution strategies applied to the equations governing the behavior of fuel cells. Specifically, the issues of non-linearity, memory and processor requirements are addressed through the use of continuation and segregated solution schemes. Examples for the time-independent solution of 3D fuel cell models by the finite element method are presented","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78800547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644001
J. Wilde, E. Zukowski
This paper describes two important issues associated with CSP package reliability. Failure due to thermomechanical stress is one of the dominant failure causes of CSPs. FE-simulations are frequently used to analyse local stresses and strains in soldered joints under thermal loads. Consequently stress and strain data are a basis for the lifetime estimation of the assemblies. In order to make a design optimisation it is necessary to identify those design and manufacturing parameters that will affect reliability. Among the factors which have influence on life-time the principal ones are materials, geometry, and assembly process parameters. In assembly technology, geometrical features can be reproduced only within certain tolerances. Also the material properties of all parts are subjected to a certain scatter. The same holds for boundary conditions, such as thermal loads. Only some of the parameters that can affect reliability can be modelled directly in a finite elements analysis. The principal variables were analysed by physical investigation of a large number of assemblies. This analysis yielded variation ranges to be used in the FEA. From FE simulation results sensitivities of lifetimes on these variables were computed and ranked. A second aspect is the statistical nature of reliability data. Thermal cycling experiments typically lead to a wide distribution of lifetimes. Therefore a designer should also be capable of the computation of generic distribution functions. This is a technique which has not yet been established. Therefore we worked out a method which combines the scatter ranges of the input variables with probabilistic methods like Monte Carlo simulation and also with FEA in order to allow for a statistical lifetime prediction. In this way, it was possible to compute also the uncertainty ranges of output parameters. In our case the influence of input parameters on thermal-cycling lifetime was estimated. Parametric studies were conducted to study qualitative and quantitative effects of several parameters on the lifetime distribution. The Weibull function is well suited to describe the simulated life distributions. Our results revealed that the slope of the Weibull curves from simulations is similar to experimental values. Therefore it was concluded that the dominant sensitivities have been modelled. Summarising, in this work a probabilistic simulation method was developed in order to calculate realistic failure distributions and to compare these directly with experimental failure data. In this way we contribute to the concept of "simulation rather than testing"
{"title":"Probabilistic Analysis of the Influences of Design Parameter on the Reliability of Chip Scale Packages","authors":"J. Wilde, E. Zukowski","doi":"10.1109/ESIME.2006.1644001","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644001","url":null,"abstract":"This paper describes two important issues associated with CSP package reliability. Failure due to thermomechanical stress is one of the dominant failure causes of CSPs. FE-simulations are frequently used to analyse local stresses and strains in soldered joints under thermal loads. Consequently stress and strain data are a basis for the lifetime estimation of the assemblies. In order to make a design optimisation it is necessary to identify those design and manufacturing parameters that will affect reliability. Among the factors which have influence on life-time the principal ones are materials, geometry, and assembly process parameters. In assembly technology, geometrical features can be reproduced only within certain tolerances. Also the material properties of all parts are subjected to a certain scatter. The same holds for boundary conditions, such as thermal loads. Only some of the parameters that can affect reliability can be modelled directly in a finite elements analysis. The principal variables were analysed by physical investigation of a large number of assemblies. This analysis yielded variation ranges to be used in the FEA. From FE simulation results sensitivities of lifetimes on these variables were computed and ranked. A second aspect is the statistical nature of reliability data. Thermal cycling experiments typically lead to a wide distribution of lifetimes. Therefore a designer should also be capable of the computation of generic distribution functions. This is a technique which has not yet been established. Therefore we worked out a method which combines the scatter ranges of the input variables with probabilistic methods like Monte Carlo simulation and also with FEA in order to allow for a statistical lifetime prediction. In this way, it was possible to compute also the uncertainty ranges of output parameters. In our case the influence of input parameters on thermal-cycling lifetime was estimated. Parametric studies were conducted to study qualitative and quantitative effects of several parameters on the lifetime distribution. The Weibull function is well suited to describe the simulated life distributions. Our results revealed that the slope of the Weibull curves from simulations is similar to experimental values. Therefore it was concluded that the dominant sensitivities have been modelled. Summarising, in this work a probabilistic simulation method was developed in order to calculate realistic failure distributions and to compare these directly with experimental failure data. In this way we contribute to the concept of \"simulation rather than testing\"","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80878257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644026
F. Braghin, E. Leo, F. Resta
Except for MEMS working in ultra high vacuum, the main cause of damping is the air surrounding the system. When the working pressure is equal to the atmospheric one (from now on called "high pressure", i.e. 105Pa), the mean free path of an air molecule is much smaller than typical MEMS dimensions. Thus, air can be considered as a viscous fluid and two phenomena occur: flow damping and squeeze film damping. These two terms can be evaluated through a simplified Navier-Stokes equation. In vacuum (from now on called "low pressure", i.e. 26Pa), the air cannot be considered as a viscous fluid any more since the free path of an air molecule is of the same order of magnitude of typical MEMS dimensions. Thus, the molecular fluid theory must be used to estimate the damping. To predict the damping of a MEMS device both at high and low pressure levels, a multi-physics code was used and the achieved numerical results were compared to experimental data measured on the same device
{"title":"Modelling of Air Damping in MEMS Inertial Sensors: Comparison Between Numerical and Experimental Results","authors":"F. Braghin, E. Leo, F. Resta","doi":"10.1109/ESIME.2006.1644026","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644026","url":null,"abstract":"Except for MEMS working in ultra high vacuum, the main cause of damping is the air surrounding the system. When the working pressure is equal to the atmospheric one (from now on called \"high pressure\", i.e. 105Pa), the mean free path of an air molecule is much smaller than typical MEMS dimensions. Thus, air can be considered as a viscous fluid and two phenomena occur: flow damping and squeeze film damping. These two terms can be evaluated through a simplified Navier-Stokes equation. In vacuum (from now on called \"low pressure\", i.e. 26Pa), the air cannot be considered as a viscous fluid any more since the free path of an air molecule is of the same order of magnitude of typical MEMS dimensions. Thus, the molecular fluid theory must be used to estimate the damping. To predict the damping of a MEMS device both at high and low pressure levels, a multi-physics code was used and the achieved numerical results were compared to experimental data measured on the same device","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81035206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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