Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644029
M. Salleras, J. Palacín, G. Carles, S. Marco
The thermal structure function permits to have an insight in the thermal pathflow of electronic components. In this work the sensitivity to noise of this technique is analyzed. For this purpose, a homogeneous slab of material is considered, since for this case the exact time constant spectrum is known. Results show that the thermal structure function is very sensitive to noise in the thermal transient
{"title":"Difficulties on the estimation of the thermal structure function from noisy thermal impedance transients","authors":"M. Salleras, J. Palacín, G. Carles, S. Marco","doi":"10.1109/ESIME.2006.1644029","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644029","url":null,"abstract":"The thermal structure function permits to have an insight in the thermal pathflow of electronic components. In this work the sensitivity to noise of this technique is analyzed. For this purpose, a homogeneous slab of material is considered, since for this case the exact time constant spectrum is known. Results show that the thermal structure function is very sensitive to noise in the thermal transient","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"195 ","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/ESIME.2006.1644029","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72443743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644036
C. Kinsella, T. Moore, J. Jarvis
A little-used first principles solution was proposed by Hess in 1969 for the stress fields in a bimaterial elastic beam under any arbitrary self equilibrating free end loading. In this paper Hess's solution is implemented using Matlab to calculate axial and normal stresses at any required horizontal or vertical cross-section of the beam. The approach uses numerical methods to develop an eigenvalue solution for any given set of layer thicknesses and material properties. A novel finite element mesh design, originally presented in 1989 by Schiermeier and Szabo, is used to validate the results from the above analysis. The mesh (of p-elements) is strongly graded around singularities, ensuring their effects are isolated. More remote areas of the model, where stresses and gradients are low, are sparsely populated by elements. The rapid changes in interfacial peeling stress and interfacial shear stress close to the free edge are coped with quite effectively by this mesh design. The two methods are used to examine the stress fields in the bimaterial beam. Although both methods can be used to calculate stresses at any required horizontal or vertical cross-section in the beam, the first principles method has the advantage of not requiring FEA software. Instead Excel or Matlab can readily display a plot of the stress distribution in the selected cross section. The method can be applied to axial, shear and peeling (normal) stresses in bimaterial beams. The solution has applications in many varied areas of engineering, from thermal stresses in IC packages to the behaviour of armour plating under mechanical loads
{"title":"Exact Modelling of Stress Fields In Bimaterial Beams Using Readily Available Mathematical Software","authors":"C. Kinsella, T. Moore, J. Jarvis","doi":"10.1109/ESIME.2006.1644036","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644036","url":null,"abstract":"A little-used first principles solution was proposed by Hess in 1969 for the stress fields in a bimaterial elastic beam under any arbitrary self equilibrating free end loading. In this paper Hess's solution is implemented using Matlab to calculate axial and normal stresses at any required horizontal or vertical cross-section of the beam. The approach uses numerical methods to develop an eigenvalue solution for any given set of layer thicknesses and material properties. A novel finite element mesh design, originally presented in 1989 by Schiermeier and Szabo, is used to validate the results from the above analysis. The mesh (of p-elements) is strongly graded around singularities, ensuring their effects are isolated. More remote areas of the model, where stresses and gradients are low, are sparsely populated by elements. The rapid changes in interfacial peeling stress and interfacial shear stress close to the free edge are coped with quite effectively by this mesh design. The two methods are used to examine the stress fields in the bimaterial beam. Although both methods can be used to calculate stresses at any required horizontal or vertical cross-section in the beam, the first principles method has the advantage of not requiring FEA software. Instead Excel or Matlab can readily display a plot of the stress distribution in the selected cross section. The method can be applied to axial, shear and peeling (normal) stresses in bimaterial beams. The solution has applications in many varied areas of engineering, from thermal stresses in IC packages to the behaviour of armour plating under mechanical loads","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"15 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78574232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644016
M. Ebert, R. Gerbach, J. Bagdahn, S. Michael, S. Hering
In the paper a new nondestructive quality testing methods for MEMS were presented that can be applied on wafer level in early stage of the manufacturing process. The approach was applied to determine the thickness of KOH etched membranes from measured eigenfrequencies. The dynamic measurements of test specimen were performed by laser Doppler vibrometry. A finite element (FE) model was created to identify the membrane thickness from the measured eigenfrequency values. A good agreement between the measured thicknesses and the calculated thicknesses of membranes was found. Furthermore, a stochastic model was created to describe the influence of different parameters on the calculated thickness of membrane
{"title":"Numerical Identification of Geometric Parameters from Dynamic Measurement of Grinded Membranes on Wafer Level","authors":"M. Ebert, R. Gerbach, J. Bagdahn, S. Michael, S. Hering","doi":"10.1109/ESIME.2006.1644016","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644016","url":null,"abstract":"In the paper a new nondestructive quality testing methods for MEMS were presented that can be applied on wafer level in early stage of the manufacturing process. The approach was applied to determine the thickness of KOH etched membranes from measured eigenfrequencies. The dynamic measurements of test specimen were performed by laser Doppler vibrometry. A finite element (FE) model was created to identify the membrane thickness from the measured eigenfrequency values. A good agreement between the measured thicknesses and the calculated thicknesses of membranes was found. Furthermore, a stochastic model was created to describe the influence of different parameters on the calculated thickness of membrane","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"44 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78668023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644006
C. Cercignani, A. Frangi, S. Lorenzani, B. Vigna
The analysis of fluid damping in micro-electro-mechanical-systems (MEMS) is addressed. A mixed fast multipole boundary element method based on both velocity and traction integral equations is employed and adapted in order to account for slip boundary conditions. The formulation presented is applied to the analysis of a biaxial accelerometer and validated with experimental results
{"title":"MVT corrections for the evaluation of damping in MEMS","authors":"C. Cercignani, A. Frangi, S. Lorenzani, B. Vigna","doi":"10.1109/ESIME.2006.1644006","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644006","url":null,"abstract":"The analysis of fluid damping in micro-electro-mechanical-systems (MEMS) is addressed. A mixed fast multipole boundary element method based on both velocity and traction integral equations is employed and adapted in order to account for slip boundary conditions. The formulation presented is applied to the analysis of a biaxial accelerometer and validated with experimental results","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"49 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74453957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643956
S. Basrour, K. Matou, Y. Ammar, M. Marzencki, A. Zenati
The aim of this paper is to deal with a new approach for the modelling and the simulation of mixed-signal multi-domain microsystems (MSMD) in the MATLABreg/Simulinkreg environment. MSMD are systems mixing different domains such as analog and digital electronics, radio-frequency modules, micro-electro-mechanical systems (MEMS), micro-optical-electro-mechanical systems (MOEMS) and others on the same chip (system-on-chip: SoC) or in the same package (system-on-package: SoP). The heterogeneity of such systems can be seen at different abstraction levels. In fact this heterogeneity is mainly due to the multiphysic domains and also to the nature of the signals available on the chip. The creation of a virtual prototype of such microsystems is very useful because it allows to significantly shorten the design cycle and to reduce the design cost. Due to different domains, the mixed signals, the several non-linearities of the electrical components or MEMS devices and the interdependences of their subsystems, it is very complex to make a global simulation and optimization with traditional approaches and with the same simulator. Several modelling languages can be used, for example SPICE and VHDL-AMS, but one of the major disadvantages of these languages concerns the convergence of the simulation. MATLABreg/Simulinkreg is a powerful environment where several subsystems can be modelled with analytical equations, electrical circuits, etc. In this paper, we apply our approach to model and to simulate a self powered micro systems (SPMS) in this simulation environment. Several simulation results, made with different abstraction levels, have been compared and are in very good agreement. Moreover, we report in this paper cosimulation results obtained with Simulinkreg/SMASHtrade software. These results will prove the efficiency of our approach for the design of microsystems
{"title":"Multi-domain and mixed-signal simulation of System-on-Chip embedding MEMS","authors":"S. Basrour, K. Matou, Y. Ammar, M. Marzencki, A. Zenati","doi":"10.1109/ESIME.2006.1643956","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643956","url":null,"abstract":"The aim of this paper is to deal with a new approach for the modelling and the simulation of mixed-signal multi-domain microsystems (MSMD) in the MATLABreg/Simulinkreg environment. MSMD are systems mixing different domains such as analog and digital electronics, radio-frequency modules, micro-electro-mechanical systems (MEMS), micro-optical-electro-mechanical systems (MOEMS) and others on the same chip (system-on-chip: SoC) or in the same package (system-on-package: SoP). The heterogeneity of such systems can be seen at different abstraction levels. In fact this heterogeneity is mainly due to the multiphysic domains and also to the nature of the signals available on the chip. The creation of a virtual prototype of such microsystems is very useful because it allows to significantly shorten the design cycle and to reduce the design cost. Due to different domains, the mixed signals, the several non-linearities of the electrical components or MEMS devices and the interdependences of their subsystems, it is very complex to make a global simulation and optimization with traditional approaches and with the same simulator. Several modelling languages can be used, for example SPICE and VHDL-AMS, but one of the major disadvantages of these languages concerns the convergence of the simulation. MATLABreg/Simulinkreg is a powerful environment where several subsystems can be modelled with analytical equations, electrical circuits, etc. In this paper, we apply our approach to model and to simulate a self powered micro systems (SPMS) in this simulation environment. Several simulation results, made with different abstraction levels, have been compared and are in very good agreement. Moreover, we report in this paper cosimulation results obtained with Simulinkreg/SMASHtrade software. These results will prove the efficiency of our approach for the design of microsystems","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"64 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80004689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643977
W. Ren, Jianjun Wang
In this paper, a drop vehicle of LCD system was selected to address the assembly-induced stress and its effect on the integrity of assembly system in drop simulation. A finite element procedure was implemented to analyze a two-step loaded LCD system in terms of ABAQUS/Standard and ABAQUS/Explicit tools. Firstly, the LCD is statically loaded by the pretension of the screws and the pressure of the elastomer to determine the stress/strain equilibrium by using the ABAQUS/Standard tool. Secondly, the pre-stressed LCD system is loaded by dropping it from one and half meters high onto a hard floor to assess its reliability under impact loading by means of the ABAQUS/Explicit tool. From the finite element analysis, it is found that the maximum stress level obtained from a model without assembly-induced pre-stressing is generally smaller than that obtained from a model with assembly-induced pre-stressing. In addition, the effect of the ratio of the pressed thickness of the elastomer to the non-pressed thickness of the elastomer on the LCD reliability was investigated based on the proposed procedure. An optimized ratio was recommended
{"title":"Assembly-Induced Stress and Its Effect on the Integrity of Assembly System in Drop Simulation","authors":"W. Ren, Jianjun Wang","doi":"10.1109/ESIME.2006.1643977","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643977","url":null,"abstract":"In this paper, a drop vehicle of LCD system was selected to address the assembly-induced stress and its effect on the integrity of assembly system in drop simulation. A finite element procedure was implemented to analyze a two-step loaded LCD system in terms of ABAQUS/Standard and ABAQUS/Explicit tools. Firstly, the LCD is statically loaded by the pretension of the screws and the pressure of the elastomer to determine the stress/strain equilibrium by using the ABAQUS/Standard tool. Secondly, the pre-stressed LCD system is loaded by dropping it from one and half meters high onto a hard floor to assess its reliability under impact loading by means of the ABAQUS/Explicit tool. From the finite element analysis, it is found that the maximum stress level obtained from a model without assembly-induced pre-stressing is generally smaller than that obtained from a model with assembly-induced pre-stressing. In addition, the effect of the ratio of the pressed thickness of the elastomer to the non-pressed thickness of the elastomer on the LCD reliability was investigated based on the proposed procedure. An optimized ratio was recommended","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"6 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84532270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644051
Y. Lee, C. Bailey, Hua Lu, S. Riches, M. Bartholomew, N. Tebbit
Micro-electronic displays are sensitive devices and its performance is easily affected by external environmental factors. To enable the display to perform in extreme conditions, the device must be structurally strengthened, the effects of this packaging process was investigated. A thermo-mechanical finite element analysis was used to discover potential problems in the packaging process and to improve the overall design of the device. The main concern from the analysis predicted that displacement of the borosilicate glass and the Y stress of the adhesive are important. Using this information a design which reduced the variation of displacement and kept the stress to a minimum was suggested
{"title":"Thermo-Mechanical Analysis of the Packaging Process for Micro-Electronic Displays","authors":"Y. Lee, C. Bailey, Hua Lu, S. Riches, M. Bartholomew, N. Tebbit","doi":"10.1109/ESIME.2006.1644051","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644051","url":null,"abstract":"Micro-electronic displays are sensitive devices and its performance is easily affected by external environmental factors. To enable the display to perform in extreme conditions, the device must be structurally strengthened, the effects of this packaging process was investigated. A thermo-mechanical finite element analysis was used to discover potential problems in the packaging process and to improve the overall design of the device. The main concern from the analysis predicted that displacement of the borosilicate glass and the Y stress of the adhesive are important. Using this information a design which reduced the variation of displacement and kept the stress to a minimum was suggested","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"198 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83763273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644019
L. Chen, R. Lehtiniemi, B. Vandevelde, A. Arslan
As flexible electronic applications gain more and more research interests, the thermal management issues related to these become more critical. This paper quantifies the thermal resistance of flip chip interconnection on flexible substrate by both simulation and experimental measurements. For the simulation, both finite element method (FEM) and computational fluid dynamics (CFD) are used. Measurements are employed in both steady state and transient state conditions. Results reveal that thinner flex substrate is a poor thermal conductor and one of the key factors in improving thermal performance is the amount of copper in the substrate, as this acts as a heat spreader to remove heat over a larger area. The module without backside metallization has a significant amount of heat conduction through the copper tracks, while for the module having backside metallization, the main portion of heat is spread over the backside metallization. Thermal resistance is also boundary-dependent: it is smaller in cold-plate condition, while 5-15 times higher at natural convection condition. The backside copper metallization plays an important role under natural convection condition, while this influence is not pronounced under cold-plate conditions.
{"title":"Steady state and transient thermal characterization for flip chip interconnection on flexible substrate","authors":"L. Chen, R. Lehtiniemi, B. Vandevelde, A. Arslan","doi":"10.1109/ESIME.2006.1644019","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644019","url":null,"abstract":"As flexible electronic applications gain more and more research interests, the thermal management issues related to these become more critical. This paper quantifies the thermal resistance of flip chip interconnection on flexible substrate by both simulation and experimental measurements. For the simulation, both finite element method (FEM) and computational fluid dynamics (CFD) are used. Measurements are employed in both steady state and transient state conditions. Results reveal that thinner flex substrate is a poor thermal conductor and one of the key factors in improving thermal performance is the amount of copper in the substrate, as this acts as a heat spreader to remove heat over a larger area. The module without backside metallization has a significant amount of heat conduction through the copper tracks, while for the module having backside metallization, the main portion of heat is spread over the backside metallization. Thermal resistance is also boundary-dependent: it is smaller in cold-plate condition, while 5-15 times higher at natural convection condition. The backside copper metallization plays an important role under natural convection condition, while this influence is not pronounced under cold-plate conditions.","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"5 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85343331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1644059
N. Iwamoto, U. Bonne
Future microelectromechanical systems (MEMS), nanoelectromechanical (NEMS), and micro-optical electromechanical systems (MOEMS) require distinct understanding of interfacial effects in order to predict their performance and to reliably manufacture these devices. We show here that molecular modeling offers a unique tool for simulating and understanding critical working interfaces by specifically modeling the atomic mechanics during performance. This paper offers examples of how molecular modeling may be used for improving materials used in MEMS devices using as example the comparative performance of materials for stationary phases in gas chromatographs. This comparison was based on derived interaction enthalpies between analytes and stationary phases and using simulations of surface separation by employing molecular dynamics. The separation performance was compared to experimental GC data., showing that qualitative comparison of separation was present from the molecular scale and confirming that molecular modeling may be a useful tool to pre-select stationary phases for specific activity
{"title":"Molecular Modeling of Analyte Adsorption on MEMS GC Stationary Phases","authors":"N. Iwamoto, U. Bonne","doi":"10.1109/ESIME.2006.1644059","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1644059","url":null,"abstract":"Future microelectromechanical systems (MEMS), nanoelectromechanical (NEMS), and micro-optical electromechanical systems (MOEMS) require distinct understanding of interfacial effects in order to predict their performance and to reliably manufacture these devices. We show here that molecular modeling offers a unique tool for simulating and understanding critical working interfaces by specifically modeling the atomic mechanics during performance. This paper offers examples of how molecular modeling may be used for improving materials used in MEMS devices using as example the comparative performance of materials for stationary phases in gas chromatographs. This comparison was based on derived interaction enthalpies between analytes and stationary phases and using simulations of surface separation by employing molecular dynamics. The separation performance was compared to experimental GC data., showing that qualitative comparison of separation was present from the molecular scale and confirming that molecular modeling may be a useful tool to pre-select stationary phases for specific activity","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"12 1","pages":"1-9"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85287255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-04-24DOI: 10.1109/ESIME.2006.1643952
L. Coyitangiye, R. Grisel
A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements
{"title":"Compact Modeling of Diode with VHDL-AMS Including Reverse Recovery","authors":"L. Coyitangiye, R. Grisel","doi":"10.1109/ESIME.2006.1643952","DOIUrl":"https://doi.org/10.1109/ESIME.2006.1643952","url":null,"abstract":"A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90088623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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